TWM653489U - Feed structure of reaction chamber of plasma processing equipment - Google Patents

Abstract

The present invention discloses a power feeding structure for a reaction chamber of a plasma treatment equipment, wherein the reaction chamber comprises a chamber body and a top cover arranged at the top of the chamber body; the top of the side wall of the chamber body is at least partially stepped with an inner edge lower than an outer edge; the power feeding structure comprises: a transmission part, which penetrates the top cover and feeds electric energy into the reaction chamber; the transmission part comprises a wire, an input end and an output end, the wire connects the input end and the output end, the input end is electrically connected to a power source outside the reaction chamber, and the output end is electrically connected to a power terminal of an electric part in the reaction chamber; and an insulating part, which insulates the power terminal from the chamber body and the top cover; wherein the power terminal is arranged directly above the inner edge and insulated from the inner edge. The invention can conveniently feed electric energy into the chamber, and completely insulate the power feeding structure and the power-consuming part from the reaction chamber, which can effectively prevent energy leakage or loss when the power is fed to the power-consuming part through the power feeding structure.

Description

Feeding structure of reaction chamber of plasma treatment equipment

This invention relates to the field of semiconductor equipment technology, and in particular to a feeding structure of a reaction chamber of a plasma processing device.

Capacitively coupled plasma etching equipment uses radio frequency energy to generate plasma between upper and lower electrodes to etch wafers. Due to the coupling nature of radio frequency energy and the complexity of the equipment structure, harmonics will be generated in the reaction chamber of the etching equipment, resulting in uneven energy distribution on the wafer surface, affecting the uniformity of etching on the wafer surface.

In order to improve the uniformity of etching, some electrical components need to be set in the reaction chamber of the plasma processing equipment. However, there are some problems with the structure of feeding these electrical components, such as occupying the equipment space and not being able to adapt to the frequent replacement of electrical components. Therefore, it is necessary to design the structure of feeding.

The purpose of this invention is to provide a feeding structure for a reaction chamber of a plasma treatment equipment, which can feed electric energy into the power-consuming part in the reaction chamber through a transmission part penetrating the top cover, and can insulate the power-consuming part from the reaction chamber through an insulating part, thereby optimizing the design of the reaction chamber, reducing the floor space occupied, and preventing radio frequency energy from leaking out of the reaction chamber.

In order to achieve the above objectives, this work is realized through the following technical solutions:

A power feeding structure for a plasma treatment equipment reaction chamber, the reaction chamber comprising a chamber and a top cover arranged at the top of the chamber; the top of the side wall of the chamber is at least partially stepped with the inner edge lower than the outer edge, the power feeding structure comprising: a transmission part, which penetrates the top cover and feeds electric energy into the reaction chamber, the transmission part comprising a wire, an input end and an output end, the wire connecting the input end and the output end, the input end being electrically connected to a power source outside the reaction chamber, and the output end being electrically connected to a power terminal of an electric part in the reaction chamber; and an insulating part, which insulates the power terminal from the chamber and the top cover; Wherein, the power terminal is arranged directly above the inner edge and is insulated from the inner edge.

Optionally, the transmission part further includes an insulating sleeve; the insulating sleeve passes through the top cover, the output end is arranged at the lower end of the insulating sleeve, and the wire passes through the insulating sleeve and is electrically connected to the output end and the input end.

Optionally, the output end is a retractable element; the retractable element abuts against the power terminal to make the power-consuming part and the power source electrically connected.

Optionally, the output end is a protruding element, and the power terminal is a feeding hole matching the protruding element; the protruding element is inserted into the feeding hole to electrically connect the power-consuming part and the power source.

Optionally, a metal elastic element is provided in the feeding hole so that the protruding element is in elastic contact with the feeding hole.

Optionally, the insulating portion includes an insulating gasket; the insulating gasket is disposed between the output end and the top cover to insulate the power terminal from the top cover.

Optionally, a sealing ring is provided between the insulating gasket and the top cover.

Optionally, the insulating portion includes an insulating seat; the insulating seat is arranged on the inner edge, and is used to carry the power terminal and insulate the power terminal from the cavity.

Optionally, the entire inner edge of the top of the cavity side wall is lower than the outer edge, the insulating seat is an inwardly concave step ring composed of an inner ring and an outer ring, and the upper surface of the inner ring is lower than the upper surface of the outer ring.

Optionally, the input end of the transmission part is electrically connected to the power source through a filter, and the filter is located outside the reaction chamber and fixed on the top cover; the filter is in contact with the top cover and the material of the contacting parts of the two is metal.

Optionally, the electrical component includes an electrical component and a cylindrical quartz component, the electrical component is arranged in the cylindrical quartz component, the cylindrical quartz component includes a protrusion extending radially outward along the top of the cylindrical quartz component, and the power terminal is arranged on the protrusion.

Optionally, the protrusion is ring-shaped.

Optionally, the electrical component is a coil.

Optionally, the power source is a direct current power source or a radio frequency source.

Compared with the existing technology, this invention has at least one of the following advantages:

The invention provides a power feeding structure for a reaction chamber of a plasma treatment equipment, wherein the input end of a transmission part penetrating a top cover is electrically connected to a power source outside the reaction chamber, the output end is electrically connected to a power terminal of a power-consuming part in the reaction chamber, a wire connects the input end and the output end to feed electric energy to the power-consuming part in the reaction chamber, and the insulating part insulates the power terminal from the cavity body and the top cover of the reaction chamber. The invention can reduce the floor space occupied by the reaction chamber and facilitate the layout and wiring of the chamber.

In this invention, a cylindrical quartz component of the electrical part has a protrusion extending outward along the radial direction of its top, and a power terminal is arranged on the protrusion to enhance the connection strength between the power terminal and the electrical component, so that the electrical component is stably connected to the power source through the power terminal, the output end of the transmission part, the wire and the input end in sequence, thereby increasing the strength of the power feeding structure.

In this invention, the filter is fixed on the top cover and electrically connected to the input end of the transmission part and the power supply. It can not only filter the RF energy in the wire to prevent the RF energy from damaging the power supply, but also reduce the floor space occupied by the reaction cavity. At the same time, the filter is in contact with the top cover and the materials of the contacting parts of the two are both metal, which can seal the input end of the transmission part and prevent the RF energy from leaking out of the reaction cavity.

The following is a further detailed description of the feeding structure of the plasma treatment equipment reaction chamber proposed by the present invention in combination with the diagram and the specific implementation method. According to the following description, the advantages and features of the present invention will be clearer. It should be noted that the diagram adopts a very simplified form and uses non-precise proportions, which is only used to conveniently and clearly assist in explaining the purpose of the implementation method of the present invention. In order to make the purpose, features and advantages of the present invention more obvious and easy to understand, please refer to the diagram. It should be noted that the structures, proportions, sizes, etc. depicted in the drawings attached to this manual are only used to match the contents disclosed in the manual for people familiar with this technology to understand and read, and are not used to limit the conditions for the implementation of this creation. Therefore, they have no substantive technical significance. Any structural modifications, changes in proportional relationships, or adjustments in size should still fall within the scope of the technical content disclosed by this creation without affecting the effects and purposes that can be achieved by this creation.

It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, article or apparatus including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or apparatus. In the absence of further restrictions, an element defined by the phrase "includes a ..." does not exclude the presence of other identical elements in the process, method, article or apparatus including the element.

In combination with FIG. 1 to FIG. 3, this embodiment provides a feeding structure of a plasma treatment equipment reaction chamber, wherein the reaction chamber 100 includes a chamber 102 and a top cover 101 disposed on the top of the chamber 102; the top of the side wall of the chamber 102 is at least partially stepped with the inner edge lower than the outer edge; the feeding structure includes: a transmission part, which penetrates the top cover 101 and feeds electric energy into the reaction chamber 100; the transmission part includes a wire 141, an input end and an output end 142; the wire 141 connects the input end and the output end 142; The output end 142 is electrically connected to the power source 130 outside the reaction chamber 100, and the output end 142 is electrically connected to the power terminal 112 of the power-consuming part 110 in the reaction chamber 100; and an insulating part, so that the power terminal 112 is insulated from the chamber body 102 and the top cover 101; wherein the power terminal 112 is arranged directly above the inner edge and insulated from the inner edge, and the directly above means that the power terminal 112 is at least partially located within the width range of the inner edge in the vertical direction.

Specifically, in this embodiment, a lower electrode 104 is provided at the inner bottom of the cavity 102, and an upper electrode 106 opposite to the lower electrode 104 is provided at one end of the top cover 101 close to the cavity 102, i.e., the bottom end of the top cover 101, and RF energy is applied to the lower electrode 104 through an introduction rod 105 to generate a RF electric field between the upper electrode 106 and the lower electrode 104, thereby ionizing the process gas introduced into the reaction chamber 100 into plasma, and performing an etching process on the wafer 103. More specifically, a quartz limiting ring 120 is further provided at the bottom of the top cover 101, and the quartz limiting ring 120 is located radially outward of the upper electrode 106, so that the plasma is confined within the quartz limiting ring 120; the power-consuming part 110 is arranged around the quartz limiting ring 120 to prevent the power-consuming part 110 from contacting the plasma, thereby avoiding the generation of metal particle contaminants and extending the service life of the power-consuming part 110, but the present invention is not limited to this.

Specifically, in this embodiment, the power-consuming part 110 includes an electrical component 113 and a cylindrical quartz component 114. The electrical component 113 is disposed in the cylindrical quartz component 114. The cylindrical quartz component 114 can prevent the electrical component 113 from being corroded by plasma, thereby extending the service life of the power-consuming part 110. More specifically, the cylindrical quartz component 114 includes a protrusion 111 extending radially outward from the top thereof, the protrusion 111 is arranged directly above the inner edge and insulated from the inner edge, and the power terminal 112 is arranged on the protrusion 111 and located at the top of the side wall of the cavity 102, so that the power terminal 112 is insulated from the cavity 102 through the protrusion 111; at the same time, the protrusion 111 can also enhance the connection strength between the power terminal 112 and the electrical element 113, so that the electrical element 113 is stably connected to the power source 130 through the power terminal 112, the output end 142 of the transmission part, the wire 141 and the input end in sequence, thereby being able to generate the required magnetic field in the cavity 102.

Preferably, the electrical element 113 is a coil. Optionally, the power source 130 may be a direct current power source or a radio frequency power source. When the power source 130 is a direct current power source, the electrical element 113 may generate a first magnetic field perpendicular to the surface of the wafer 103 in the chamber 102 to adjust the distribution density of the plasma above the wafer 103 and make the plasma distribution uniform, thereby improving the uniformity of etching on the surface of the wafer 103; when the power source 130 is a radio frequency source, the electrical element 113 may generate a second magnetic field to clean the reaction chamber. Preferably, in some embodiments, the protrusion 111 is annular, and the protrusion 111 is integrally provided with the cylindrical quartz component 114. In some embodiments, the power-consuming unit 110 may also only include the electrical component 113, but the present invention is not limited to this.

Please refer to FIG. 1 to FIG. 3 at the same time. The insulating portion includes an insulating seat 152 . The insulating seat 152 is disposed on the inner edge to support the power terminal 112 and insulate the power terminal 112 from the cavity 102 .

Specifically, in this embodiment, the protrusion 111 can be arranged on the insulating seat 152, so that the protrusion 111 is installed on the side wall of the cavity 102 through the insulating seat 152 to enhance the stability of the connection between the protrusion 111 and the cavity 102, thereby ensuring the stability of the power terminal 112 on the protrusion 111; at the same time, the power terminal 112 is insulated from the cavity 102 by the two components of the protrusion 111 and the insulating seat 152, which can improve the reliability of the insulation between the power terminal 112 and the cavity 102, thereby reducing the risk of leakage of the power terminal 112. Preferably, the entire inner edge of the top of the side wall of the cavity 102 is lower than the outer edge, the insulating seat 152 is a concave step ring composed of an inner ring and an outer ring, the upper surface of the inner ring is lower than the upper surface of the outer ring, and the protrusion 111 is fixed to the upper surface of the inner ring, but the present invention is not limited to this.

Please refer to Figures 1 to 3 at the same time. The transmission part also includes an insulating sleeve 143; the insulating sleeve 143 passes through the top cover 101, the output end 142 is arranged at the lower end of the insulating sleeve 143, and the wire 141 passes through the insulating sleeve 143 and is electrically connected to the output end 142 and the input end.

It can be understood that the insulating portion further includes an insulating gasket 151 ; the insulating gasket 151 is disposed between the output terminal 142 and the top cover 101 to insulate the power terminal 112 from the top cover 101 .

Specifically, in this embodiment, the insulating sleeve 143 can prevent the wire 141 from contacting the top cover 101, thereby isolating the wire 141 from the top cover 101, thereby reducing the risk of leakage of the wire 141. The insulating gasket 151 can prevent the output end 142 of the transmission part and the power terminal 112 from contacting the top cover 101, thereby isolating the output end 142 and the power terminal 112 from the top cover 101, thereby preventing the output end 142 and the power terminal 112 from leaking. It can be seen that the insulating sleeve 143, the insulating gasket 151 and the insulating seat 152 can completely insulate the power feeding structure and the power-consuming part 110 from the reaction chamber 100, and can effectively prevent leakage when the power source 130 feeds power to the power-consuming part 110 through the power feeding structure, but the present invention is not limited to this.

More specifically, the insulating gasket 151 can be fixed on the end surface of the top cover 101 close to the chamber 102 by means of a fastener 153; and a sealing ring 171 is provided between the insulating gasket 151 and the top cover 101, and between the insulating gasket 151 and the insulating seat 152, to ensure the sealing of the reaction chamber 100, thereby ensuring the high vacuum inside the reaction chamber 100. In addition, a metal gasket 172 is further provided between the top cover 101 and the chamber 102, so that the top cover 101 and the chamber 102 can form a radio frequency circuit required for the process, and prevent the radio frequency energy from leaking out of the chamber. Preferably, the fastener 153 is a screw, but the invention is not limited thereto.

Please continue to refer to FIG. 2 and FIG. 3 , the output end 142 is a protruding element, and the power terminal 112 is a feeding hole matching the protruding element; the protruding element is inserted into the feeding hole to electrically connect the power-consuming part 110 and the power source 130.

Specifically, in this embodiment, a metal elastic element is provided in the feed hole so that the protruding element is in elastic contact with the feed hole, which increases the stability of the electrical connection and prevents the impact force caused by the protruding element when inserted into the feed hole from damaging the feed hole, thereby extending the service life of the feed hole. Preferably, the metal elastic element can be a compression spring, a disc spring or an elastic gasket made of metal material, but the invention is not limited thereto.

In some embodiments, the output end 142 is a retractable element; the retractable element abuts against the power terminal 112 to electrically connect the power-consuming part 110 and the power source 130. Preferably, the power terminal 112 can be a conductive plate at this time, but the invention is not limited thereto.

Please refer to Figures 1 to 3 at the same time. The input end of the transmission part is electrically connected to the power source 130 through the filter 160. The filter 160 is located outside the reaction chamber and fixed on the top cover 101. The filter 160 is in contact with the top cover 101 and the materials of the contacting parts of the two are both metal.

Specifically, in this embodiment, the RF energy introduced into the reaction chamber 100 through the introduction rod 105 will also be exported through the electrical element 113 and the wire 141 and damage the power supply 130; and the setting of the filter 160 can filter the RF energy in the wire 141 to prevent the RF energy from damaging the power supply 130. More specifically, considering that the space above the top cover 101 is more adjustable, the filter 160 can also be fixed on the top cover 101, and the lower end face of the filter 160, i.e., the end face of the filter 160 close to the cavity 102, contacts the upper end face of the top cover 101, i.e., the end face of the top cover 101 away from the cavity 102, so as to seal the input end of the transmission part, thereby preventing the RF energy from leaking out of the reaction cavity, but the present invention is not limited to this.

In summary, the present embodiment provides a power feeding structure for a reaction chamber of a plasma treatment device, wherein the reaction chamber comprises a chamber body and a top cover arranged at the top of the chamber body; the top of the side wall of the chamber body is at least partially stepped with the inner edge being lower than the outer edge; the power feeding structure comprises a transmission part and an insulating part penetrating the top cover; the input end of the transmission part is electrically connected to a power source outside the reaction chamber, the output end is electrically connected to a power terminal of a power-consuming part in the reaction chamber, a wire connects the input end and the output end to feed electric energy to the power-consuming part in the reaction chamber, and the insulating part insulates the power terminal from the chamber body and the top cover of the reaction chamber. The present embodiment can reduce the floor space occupied by the reaction chamber and facilitate the layout and wiring of the chamber. In addition, in this embodiment, the cylindrical quartz component of the power-consuming part has a protrusion extending outward along the radial direction of its top, and the power terminal is arranged on the protrusion to enhance the connection strength between the power terminal and the electrical component, so that the electrical component is stably connected to the power supply through the power terminal, the output end of the transmission part, the wire and the input end in sequence, thereby increasing the strength of the power feeding structure; the filter is fixed The filter is placed on the top cover and is electrically connected to the input end of the transmission part and the power supply. It can not only filter the RF energy in the wire to prevent the RF energy from damaging the power supply, but also reduce the floor space occupied by the reaction cavity. At the same time, the filter is in contact with the top cover and the materials of the contacting parts of the two are both metal, which can seal the input end of the transmission part, thereby preventing the RF energy from leaking out of the reaction cavity.

Although the content of this creation has been described in detail through the above preferred embodiments, it should be recognized that the above description should not be considered as a limitation of this creation. After reading the above content, various modifications and substitutions of this creation will be obvious to those skilled in the art. Therefore, the scope of protection of this creation should be limited by the scope of the attached patent application.

100: reaction chamber 101: top cover 102: chamber 103: wafer 104: lower electrode 105: introduction rod 106: upper electrode 110: power supply 111: protrusion 112: power terminal 113: electrical component 114: cylindrical quartz component 120: quartz limiting ring 130: power supply 141: wire 142: output terminal 143: insulation sleeve 151: insulation gasket 152: insulation seat 153: fastener 160: filter 171: sealing ring 172: metal gasket

Figure 1 is a schematic diagram of the structure of a plasma treatment device provided in an embodiment of the present invention; Figure 2 is a schematic diagram of the feeding structure of a reaction chamber of a plasma treatment device provided in an embodiment of the present invention; Figure 3 is an enlarged schematic diagram of the feeding structure of a reaction chamber of a plasma treatment device provided in an embodiment of the present invention.

100: reaction chamber

101: Top cover

102: Cavity

103: Wafer

104: Lower electrode

105:Introduction rod

106: Upper electrode

110: Electricity Department

111: protrusion

112: Power terminal

113:Electrical components

114: Cylindrical quartz parts

120: Quartz limiting ring

130: Power supply

141: Conductor

142: Output terminal

143: Insulation sleeve

151: Insulation gasket

152: Absolute Seat

160:Filter

Claims (14)

A power feeding structure for a plasma treatment equipment reaction chamber, the reaction chamber comprising a chamber and a top cover arranged at the top of the chamber; wherein at least part of the top of the side wall of the chamber is a stepped type with an inner edge lower than an outer edge, the power feeding structure comprising: a transmission part, penetrating the top cover and feeding electric energy into the reaction chamber, the transmission part comprising a wire, an input end and an output end, the wire connecting the input end and the output end, the input end being electrically connected to a power source outside the reaction chamber, and the output end being electrically connected to a power terminal of an electric part in the reaction chamber; and an insulating part, isolating the power terminal from the chamber and the top cover; Wherein, the power terminal is arranged directly above the inner edge and is insulated from the inner edge. The power feeding structure as described in claim 1, wherein the transmission part further includes an insulating sleeve; the insulating sleeve passes through the top cover, the output end is arranged at the lower end of the insulating sleeve, and the wire passes through the insulating sleeve and is electrically connected to the output end and the input end. As described in claim 2, the output end is a retractable element; the retractable element abuts against the power terminal to electrically connect the power-consuming part and the power source. As described in claim 2, the output end is a protruding element, and the power terminal is a feeding hole matching the protruding element; the protruding element is inserted into the feeding hole to electrically connect the power-consuming part and the power source. As described in claim 4, a metal elastic element is provided in the feeding hole so that the protruding element is in elastic contact with the feeding hole. The power feeding structure as described in claim 1, wherein the insulating portion includes an insulating gasket; the insulating gasket is arranged between the output terminal and the top cover to insulate the power terminal from the top cover. A power feeding structure as described in claim 6, wherein a sealing ring is provided between the insulating gasket and the top cover. The power feeding structure as described in claim 6, wherein the insulating portion includes an insulating seat; the insulating seat is arranged on the inner edge to support the power terminal and insulate the power terminal from the cavity. A feeding structure as described in claim 8, wherein the inner edges of the entire top of the cavity side wall are lower than the outer edges, the insulating seat is an inwardly concave stepped ring composed of an inner ring and an outer ring, and the upper surface of the inner ring is lower than the upper surface of the outer ring. A power feeding structure as described in claim 1, wherein the input end of the transmission part is electrically connected to the power source through a filter, and the filter is located outside the reaction chamber and fixed on the top cover; the filter is in contact with the top cover and the material of the contacting parts of the two is metal. A power feeding structure as described in any one of claim 1 to claim 10, wherein the power-consuming part includes an electrical component and a cylindrical quartz component, the electrical component is arranged in the cylindrical quartz component, the cylindrical quartz component includes a protrusion extending radially outward along the top thereof, and the power terminal is arranged on the protrusion. A feeding structure as described in claim 11, wherein the protrusion is ring-shaped. A feeding structure as described in claim 11, wherein the electrical component is a coil. A feeding structure as described in claim 11, wherein the power source is a direct current power source or a radio frequency power source.

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