CN218004772U - Semiconductor process chamber - Google Patents

Abstract

The utility model provides a semiconductor process cavity, including cavity, bearing dish and spliced pole, bearing dish sets up and is used for bearing the wafer in the cavity, and the top of spliced pole is connected with the bottom of bearing the dish, and the bottom of spliced pole is used for being connected with radio frequency power supply down to bearing the dish and providing radio frequency signal, semiconductor process cavity still includes the impedance return circuit, and the first end in impedance return circuit is connected with the spliced pole electricity, and the second in impedance return circuit holds ground connection. The utility model discloses in, be connected with the impedance return circuit of one end ground connection on the spliced pole, increase a parallelly connected branch road through the impedance return circuit between spliced pole and earthing terminal, shunt the power of original loading to bottom electrode, reduced bottom electrode voltage under the condition of power supply module output same power down to can realize accurate, the stability control to lower bottom electrode voltage, guarantee the stability of low damage etching process.

Description

Semiconductor process chamber

Technical Field

The utility model relates to a semiconductor process equipment field specifically relates to a semiconductor process cavity.

Background

When a related process such as an aluminum gallium nitride (AlGaN)/gallium nitride (GaN) High Electron Mobility Transistor (HEMT) device, a p-type aluminum gallium nitride High Electron Mobility Transistor device, a process enhanced High Electron Mobility Transistor device, a MOSFET enhanced High Electron Mobility Transistor device, and the like is performed, an etching depth for performing overall etching on a wafer is shallow, so that an etching rate needs to be accurately controlled, and stable starting needs to be performed under a low power condition to ensure uniformity of overall roughness of the wafer, and a low ion energy is obtained to maintain a low etching rate.

However, when the conventional semiconductor process chamber performs an etching process, the power applied to the bottom electrode cannot be stably controlled to a low value. Therefore, how to provide a semiconductor process chamber capable of improving the accuracy and stability of applying low power to the bottom electrode is an urgent technical problem to be solved in the art.

SUMMERY OF THE UTILITY MODEL

The utility model aims at providing a semiconductor process cavity, this semiconductor process cavity can realize guaranteeing the stability of low damage sculpture technology to lower bottom electrode voltage's accuracy, stable control.

In order to achieve the above object, the utility model provides a semiconductor process chamber, include the cavity, bear dish and spliced pole, it is in to bear the dish setting be used for bearing the wafer in the cavity, the top of spliced pole with bear the bottom of dish and connect, the bottom of spliced pole is used for being connected with lower radio frequency power supply, with to bear the dish and provide radio frequency signal, semiconductor process chamber still includes the impedance return circuit, the first end in impedance return circuit with the spliced pole electricity is connected, the second end ground connection in impedance return circuit.

Optionally, the impedance loop comprises a capacitive element, a first end of the capacitive element is electrically connected to the first end of the impedance loop, and a second end of the capacitive element is electrically connected to the second end of the impedance loop.

Optionally, the cavity is grounded, and the second end of the impedance loop is electrically connected to the cavity.

Optionally, the capacitor element has a first electrode and a second electrode, the first electrode is formed as a first end of the capacitor element, the second electrode is formed as a second end of the capacitor element, the impedance loop further includes a fixing member, an adaptor member and at least one first fastening member, and the first electrode and the second electrode of the capacitor element are both fixedly disposed on a capacitor fixing surface of the fixing member;

at least one first fixing through hole penetrating through the capacitor fixing surface is formed in the fixing piece, at least one first fixing hole in one-to-one correspondence with the first fixing through hole is formed in the connecting column, at least one first avoiding hole in one-to-one correspondence with the first fixing through hole is formed in the first electrode, the first fasteners sequentially penetrate through the corresponding first fixing through hole and the corresponding first avoiding hole in one-to-one correspondence and enter the first fixing hole, so that the fixing piece is fixedly connected with the connecting column, and the first electrode is used as a first end of the impedance loop to be in electrical contact with the connecting column;

the adapter is connected between the fixing piece and the cavity, and electrically connects the second electrode with the cavity.

Optionally, the impedance loop further includes at least one second fastener, at least one second fixing through hole penetrating through the capacitor fixing surface is further formed in the fixing member, at least one second fixing hole corresponding to the second fixing through hole in one-to-one manner is formed in the adaptor, at least one second avoiding hole corresponding to the second fixing through hole in one-to-one manner is formed in the second electrode, the second fastener sequentially penetrates through the corresponding second fixing through hole and the second avoiding hole in one-to-one manner and enters the second avoiding hole, so that the fixing member is fixedly connected with the adaptor, and the second electrode is electrically contacted with the adaptor and is electrically connected with the cavity through the adaptor.

Optionally, the first fastener is a screw, the first fixing hole is a threaded hole, the impedance loop further includes a first flat washer and a first spring washer, which are in one-to-one correspondence with the first fastener, the first flat washer and the first spring washer are both sleeved on a nail rod of the corresponding first fastener, the first flat washer is located between a head of the first fastener and the fixing member, and the first spring washer is located between the head of the first fastener and the first flat washer;

the second fastening piece is a screw, the second fixing hole is a threaded hole, the impedance loop further comprises a second flat washer and a second elastic washer, the second flat washer and the second elastic washer are in one-to-one correspondence with the second fastening piece, the second flat washer and the second elastic washer are both sleeved on the corresponding nail rod of the second fastening piece, the second flat washer is located between the head of the second fastening piece and the fixing piece, and the second elastic washer is located between the head of the second fastening piece and the second flat washer.

Optionally, the cavity comprises a cavity body and an installation cylinder, the bottom of the cavity body is provided with a bottom opening, the bottom end of the installation cylinder is connected with the bottom opening and integrated with the bottom opening, the bearing disc seals the top end of the installation cylinder, and the connecting column is located in the installation cylinder;

the impedance loop further comprises at least one third fastening piece, at least one third fixing through hole is formed in the adapter piece, third fixing holes corresponding to the third fixing through holes one to one are formed in the bottom of the cavity body, and the third fastening pieces penetrate through the third fixing through holes one to one and enter the third fixing holes so as to fixedly connect the adapter piece and the cavity.

Optionally, the third fastening piece is a screw, the third fixing hole is a threaded hole, the impedance loop further includes a third flat washer and a third elastic washer, the third flat washer and the third elastic washer are in one-to-one correspondence with the third fastening piece, the third flat washer and the third elastic washer are both sleeved on the corresponding nail rod of the third fastening piece, the third flat washer is located between the head of the third fastening piece and the adaptor, and the third elastic washer is located between the head of the third fastening piece and the third flat washer.

Optionally, the semiconductor process chamber further includes a supporting member and an insulating member, the supporting member and the insulating member are stacked around the connecting column and disposed at the bottom of the carrier tray, the carrier tray is connected to the top end of the mounting cylinder in a sealing manner, and the insulating member is located between the supporting member and the top end of the mounting cylinder.

Optionally, a capacitance value of the capacitive element is greater than or equal to 600pF.

The utility model provides an among the semiconductor process cavity, be connected with the impedance return circuit of one end ground connection on the spliced pole, increase a parallelly connected branch road through the impedance return circuit between spliced pole and earthing terminal, power to original loading to bottom electrode shunts, bottom electrode voltage has been reduced under the condition of power supply module output same power down, thereby can realize the accuracy to lower bottom electrode voltage through the same power supply module down, stability control, the stability of starting luminance under the low-power condition has been improved, and then the stability of low damage etching process has been guaranteed.

Drawings

The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. In the drawings:

fig. 1 is a schematic structural diagram of a semiconductor processing chamber provided by an embodiment of the present invention;

fig. 2 is a schematic diagram of an equivalent circuit of a bottom electrode of a semiconductor processing chamber according to an embodiment of the present invention;

fig. 3 is a schematic diagram of a portion of a semiconductor processing chamber according to an embodiment of the present invention;

fig. 4 is a schematic diagram illustrating a variation curve of the lower electrode voltage corresponding to the power when the capacitance element in the semiconductor process chamber has different capacitance values according to an embodiment of the present invention;

fig. 5 is a schematic structural diagram of a capacitor device in a semiconductor processing chamber according to an embodiment of the present invention.

Description of reference numerals:

10: the upper power supply 20: upper matcher

30: upper electrode coil 40: dielectric window

50: inner liner 60: cavity body

70: the carrier tray 71: focusing ring

72: insulating ring 80: support piece

90: impedance circuit 91: adapter

92: the capacitive element 921: a first electrode

922: second electrode 93: fixing piece

94: first fastener 95: third fastener

96: second fastener 100: connecting column

110: lower matcher 120: lower radio frequency power supply

Detailed Description

The following describes in detail embodiments of the present invention with reference to the accompanying drawings. It is to be understood that the description of the embodiments herein is for purposes of illustration and explanation only and is not intended to limit the invention.

In a semiconductor process, an rf Power supply generally provides an rf signal to a bottom electrode, and a Voltage output from the bottom electrode increases with an increase in Power of the rf Power supply, and a linear relationship between the Power of the rf Power supply and the Voltage output from the bottom electrode may be approximately Voltage = a Power + B, where Voltage is the Voltage output from the bottom electrode and Power is the Power of the rf Power supply.

When the related processes such as the aluminum gallium nitride/gallium nitride hemt device, the p-type aluminum gallium nitride hemt device, the process enhanced hemt device, the MOSFET enhanced hemt device and the like are performed, a lower Voltage needs to be applied to the lower electrode, a relationship between the Voltage and the power of the lower electrode obtained by a low-power radio frequency power supply test of 0-300W is Voltage =1.6 × power +3.5, and the coefficient a is larger, that is, the Voltage change of the lower electrode is larger after the power of the radio frequency power supply is adjusted. However, in the prior art, when low-damage etching is implemented, the required radio frequency power of the lower electrode is very small, and the magnitude is 0.1W, but the power of the existing radio frequency power supply cannot be accurately controlled to the required magnitude, and the output is unstable at low power.

In order to solve the above technical problem, the utility model provides a semiconductor process chamber, as shown in fig. 1, this semiconductor process chamber includes cavity 60, bear dish 70 and spliced pole 100, bear dish 70 and set up and be used for bearing the weight of the wafer in cavity 60, the top of spliced pole 100 and the metal base of the bottom (of) fixed connection who bears dish 70, the bottom of spliced pole 100 is used for being connected with lower radio frequency power supply 120, so that (make power supply module pass through spliced pole 100 down) provide radio frequency signal to bearing dish 70, thereby provide energy for plasma and bombard the wafer surface downwards. The semiconductor processing chamber further includes an impedance loop 90, a first end of the impedance loop 90 being electrically connected to the connection stud 100, and a second end of the impedance loop 90 being grounded.

In some embodiments of the present invention, the semiconductor process chamber may also be pre-assembled with power supply components of the upper electrode and the lower electrode, for example, optionally, as shown in fig. 1, the semiconductor process chamber further comprises an upper electrode component, an upper electrode coil 30 and a lower power supply component, the lower power supply component may comprise a lower rf power supply 120 and a lower matching unit 110, and the lower rf power supply 120 provides rf signals to the connection column 100 through the lower matching unit 110. The upper power supply assembly includes an upper power supply 10 and an upper matching unit 20, and the upper power supply 10 is configured to provide a radio frequency signal into the chamber 60 through the upper matching unit 20 and the upper electrode coil 30 to ionize the process gas in the chamber 60 to form a plasma. Optionally, as shown in fig. 1, the semiconductor processing chamber further includes a dielectric window 40 and a liner 50, the dielectric window 40 sealing the top opening of the chamber body 60, the upper electrode coil 30 disposed above the dielectric window 40, and the liner 50 disposed around the carrier plate 70 for protecting the inner wall of the sealed chamber body 60. Alternatively, the carrier platter 70 may be an electrostatic chuck (ESC).

Alternatively, as shown in fig. 1, the chamber 60 includes a chamber body and a mounting cylinder, the bottom of the chamber body has a bottom opening, the bottom end of the mounting cylinder is connected with the bottom opening and is formed into a whole, the carrier plate 70 seals the top end of the mounting cylinder, the connection column 100 is located in the mounting cylinder, the semiconductor process chamber further includes a support member 80 and an insulating and heat-insulating member 81, the support member 80 and the insulating and heat-insulating member 81 are stacked around the connection column 100 at the bottom of the carrier plate 70 and hermetically connect the carrier plate 70 with the top end of the mounting cylinder, and the insulating and heat-insulating member 81 is located between the support member 80 and the top end of the mounting cylinder.

FIG. 2 is a schematic diagram of an equivalent circuit of a lower electrode of a semiconductor process chamber according to an embodiment of the present invention, in which BRF represents that the lower RF power source 120, bmatch \/C1, bmatch _ C2 are parameters of internal components of the lower matcher 110, and C \/u _{Lower electrode lay} An equivalent capacitance generated between the supporting member 80, the insulating member 81 and the chamber 60 (the supporting member 80 is generally an aluminum member, i.e., the insulating member 81 is formed between the supporting member 80 and the chamber 60, which are both conductive, and forms a capacitance structure), the L _ RF copper pillar is an equivalent inductance corresponding to the connecting post 100, C_ _esc1 、C_ _esc2 To be an equivalent capacitance of two ceramic insulating layers inside the carrier tray 70, plasma represents an equivalent impedance of Plasma generated in the chamber, and C _90 represents a capacitance value of the impedance loop 90.

In the prior art, the coefficient A in the relation between the lower electrode voltage and the power is large, the common lower power supply assembly is difficult to realize the stable control of the lower electrode voltage, a high-precision radio frequency power supply control system is required to be additionally equipped when the low-damage etching process is carried out, and the operation cost of a machine is improved.

And in the utility model provides an in the semiconductor process cavity, be connected with the impedance return circuit 90 of one end ground connection on the spliced pole 100, increase a parallelly connected branch road between spliced pole 100 and earthing terminal through impedance return circuit 90 promptly, the power to original loading to bottom electrode is shunted, bottom electrode voltage has been reduced under the condition of power supply module output same power down, thereby can realize the accuracy to lower bottom electrode voltage through the same power supply module down, the stability control, the stability of starting under the low power condition has been improved, and then the stability of low damage etching process has been guaranteed.

Optionally, the material of the supporting member 80 is aluminum. Optionally, the connecting stud 100 is made of copper.

Optionally, as shown in fig. 1, the semiconductor processing chamber further comprises a focus ring 71 and an insulating ring 72, wherein the focus ring 71 is used for limiting the wafers carried on the carrier plate 70, and the insulating ring 72 is used for isolating the carrier plate 70 from the liner 50 and preventing sparking. Optionally, the material of the focus ring 71 and the insulating ring 72 is ceramic.

As an optional embodiment of the present invention, as shown in fig. 1 and fig. 3, the impedance circuit 90 includes a capacitor 92, a first end of the capacitor 92 is electrically connected to a first end of the impedance circuit 90, and a second end of the capacitor 92 is electrically connected to a second end of the impedance circuit 90.

In a preferred embodiment of the present invention, the capacitance value of the capacitor element 92 is 600pF or more.

As shown in fig. 4, which is a schematic diagram of a variation curve of the lower electrode voltage and the power when the capacitance element 92 has different capacitance values, as can be seen from fig. 4, when the capacitance value of the capacitance element 92 increases to more than 600pF, the slope of the curve remains substantially unchanged, and the lower electrode voltage-power curve can be approximated to a straight line, so as to adjust the rf power of the lower rf power supply 120 according to the curve, so as to adjust the lower electrode voltage to a desired value.

As shown in fig. 4, when the capacitance value of the capacitive element 92 is 600pF, the linear slope of the voltage-power curve is about 0.81, and the relationship between the lower electrode voltage and the power is voltage =0.81power +4.25 through fitting calculation.

As an optional embodiment of the present invention, the cavity 60 is grounded, and the second end of the impedance loop 90 is electrically connected to the cavity 60, i.e. grounded through the cavity 60. Likewise, the bottom of the support 80 is also grounded through the chamber 60.

As an alternative embodiment of the present invention, as shown in fig. 5, the capacitor 92 has a first electrode 921 and a second electrode 922, the first electrode 921 is formed as a first end of the capacitor 92 (in the embodiment shown in fig. 3, the first electrode 921 is directly formed as a first end of the impedance loop 90), and the second electrode 922 is formed as a second end of the capacitor 92.

The capacitor element 92 further includes a ceramic capacitor, the ceramic capacitor is located between the first electrode 921 and the second electrode 922, and the three are welded together, because the electrodes on the two sides of the capacitor element 92 are generally in a sheet structure, the structural strength is low, in order to ensure the overall structural strength of the impedance loop 90, and to avoid the loop from being broken, as a preferred embodiment of the present invention, as shown in fig. 3, the impedance loop 90 further includes a fixing member 93, an adapter member 91 and at least one first fastening member 94, and the first electrode 921 and the second electrode 922 of the capacitor element 92 are both fixedly disposed on the capacitor fixing surface of the fixing member 93;

at least one first fixing through hole penetrating to the capacitor fixing surface is formed in the fixing piece 93, at least one first fixing hole corresponding to the first fixing through hole in a one-to-one manner is formed in the connecting column 100, at least one first avoiding hole corresponding to the first fixing through hole in a one-to-one manner is formed in the first electrode 921, the first fastening pieces 94 sequentially penetrate through the corresponding first fixing through hole and the corresponding first avoiding hole in a one-to-one manner and enter the first fixing holes, so that the fixing piece 93 is fixedly connected with the connecting column 100, and the first electrode 921 serves as a first end of the impedance loop 90 to be in electrical contact with the connecting column 100 (namely, the first electrode 921 at the first end of the capacitor element 92 directly forms a first end of the impedance loop 90);

the interposer 91 is connected between the fixing member 93 and the chamber 60, and electrically connects the second electrode 922 with the chamber 60 (i.e., the portion of the interposer 91 connected with the chamber 60 is formed as the second end of the impedance loop 90).

In the embodiment of the present invention, the capacitor element 92 is fixed on the fixing member 93, and the first electrode 921 is pressed on the connecting column 100 through the fixed connection relationship between the fixing member 93 and the connecting column 100, so that the weak structure of the first electrode 921 is protected, and the good electrical contact between the first electrode 921 and the connecting column 100 is ensured.

Optionally, the fixing member 93 is a resin member, and the adaptor 91 is made of a metal material.

As a preferred embodiment of the present invention, the first fastening member 94 is a screw, the first fixing hole is a threaded hole, the impedance loop 90 further includes a first flat washer and a first elastic washer corresponding to the first fastening member 94 one-to-one, the first flat washer and the first elastic washer are all sleeved on the nail rod of the corresponding first fastening member 94, the first flat washer is located between the head of the first fastening member 94 and the fixing member 93, and the first elastic washer is located between the head of the first fastening member 94 and the first flat washer.

The embodiment of the utility model provides an in, be provided with first flat packing ring between the head of first fastener 94 and mounting 93 to can disperse the stress that receives on the mounting 93, prolong the life of mounting 93, still be provided with first bullet packing ring between the head of first fastener 94 and the first flat packing ring, thereby can effectively avoid first fastener 94 to take place not hard up in the long-term use of machine platform, improve the security of semiconductor process cavity.

As an optional implementation manner of the present invention, the adaptor 91 may also be fixedly connected to the fixing member 93 through a fastener, specifically, as shown in fig. 3, the impedance loop 90 further includes at least one second fastener 96, at least one second fixing through hole penetrating through to the capacitor fixing surface is further formed in the fixing member 93, at least one second fixing hole corresponding to the second fixing through hole one to one is formed on the adaptor 91, at least one second avoiding hole corresponding to the second fixing through hole one to one is formed on the second electrode 922, the second fastener 96 sequentially passes through the corresponding second fixing through hole and the second avoiding hole one to one and enters the second fixing hole, so as to fixedly connect the fixing member 93 to the adaptor 91, and electrically contact the second electrode 922 to the adaptor 91, and is electrically connected to the cavity 60 through the adaptor 91.

For avoiding the junction of adaptor 91 and mounting 93 to take place not hard up, as the utility model discloses a preferred embodiment, second fastener 96 is the screw, and the second fixed orifices is the screw hole, and impedance return circuit 90 still includes the second flat packing ring and the second bullet packing ring with second fastener 96 one-to-one, and the second is flat packing ring and the second bullet packing ring is all established on the nail pole of the second fastener 96 that corresponds, and the second is flat packing ring to be located between the head of second fastener 96 and mounting 93, and the second bullet packing ring is located between the head of second fastener 96 and the second flat packing ring.

As an optional implementation manner of the present invention, the adaptor 91 may also be fixedly connected to the cavity 60 through a fastener, specifically, as shown in fig. 3, the impedance loop 90 further includes at least one third fastener 95, at least one third fixing through hole is formed on the adaptor 91, a third fixing hole corresponding to the third fixing through hole one to one is formed at the bottom of the cavity 60 body, and the third fastener 95 passes through the third fixing through hole in a one-to-one manner and enters the third fixing hole, so as to fixedly connect the adaptor 91 to the cavity 60.

In order to avoid the connecting portion between the adaptor 91 and the cavity 60 from becoming loose, as a preferred embodiment of the present invention, the third fastening member 95 is a screw, the third fixing hole is a threaded hole, the impedance loop 90 further includes a third elastic washer and a third flat washer corresponding to the third fastening member 95 one by one, the third elastic washer and the third flat washer are all sleeved on the nail rod of the corresponding third fastening member 95, and the third flat washer is located between the head of the third fastening member 95 and the adaptor 91, and the third elastic washer is located between the head of the third fastening member 95 and the third flat washer.

The embodiment of the utility model provides an in, be provided with first flat packing ring between the head of third fastener 95 and adaptor 91 to can disperse the stress that receives on the adaptor 91, prolong the life of adaptor 91, still be provided with first bullet packing ring between the head of third fastener 95 and the first flat packing ring, thereby can effectively avoid third fastener 95 to take place not hard up in the long-term use of platform, improve the security of semiconductor process chamber.

As an alternative embodiment of the present invention, as shown in fig. 3, the adaptor 91 has an adaptor body parallel to the bottom wall of the cavity 60 and a bending portion 91a perpendicular to the adaptor body, one end of the adaptor body away from the bending portion 91a is formed as a second end of the impedance loop 90, and the second fixing hole is formed on the bending portion 91 a.

The utility model provides an in the semiconductor process cavity, be connected with the impedance return circuit 90 of one end ground connection on the spliced pole 100, increase a parallelly connected branch road between spliced pole 100 and earthing terminal through impedance return circuit 90 promptly, the power to original loading to bottom electrode is shunted, bottom electrode voltage has been reduced under the condition of power supply module output same power down, thereby can realize the accuracy to lower bottom electrode voltage through the same power supply module down, stability control, the stability of starting under the low power condition has been improved, and then the stability of low damage etching process has been guaranteed.

It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.

Claims (10)

1. The utility model provides a semiconductor process chamber, includes cavity, bears dish and spliced pole, bear the dish and set up be used for bearing the weight of the wafer in the cavity, the top of spliced pole with bear the bottom of dish and connect, the bottom of spliced pole is used for being connected with radio frequency power supply down, in order to bear the dish and provide radio frequency signal, its characterized in that, semiconductor process chamber still includes the impedance return circuit, the first end in impedance return circuit with the spliced pole electricity is connected, the second end ground connection in impedance return circuit.

2. The semiconductor process chamber of claim 1, wherein the impedance loop comprises a capacitive element, a first end of the capacitive element being electrically connected to a first end of the impedance loop, a second end of the capacitive element being electrically connected to a second end of the impedance loop.

3. The semiconductor process chamber of claim 2, wherein the cavity is grounded and the second end of the impedance loop is electrically connected to the cavity.

4. The semiconductor process chamber of claim 3, wherein the capacitive element has a first electrode formed as a first end of the capacitive element and a second electrode formed as a second end of the capacitive element, the impedance loop further comprising a fixture, an interposer, and at least one first fastener, the first electrode and the second electrode of the capacitive element both being fixedly disposed on a capacitive mounting surface of the fixture;

at least one first fixing through hole penetrating through the capacitor fixing surface is formed in the fixing piece, at least one first fixing hole in one-to-one correspondence with the first fixing through hole is formed in the connecting column, at least one first avoiding hole in one-to-one correspondence with the first fixing through hole is formed in the first electrode, the first fasteners sequentially penetrate through the corresponding first fixing through hole and the corresponding first avoiding hole in one-to-one correspondence and enter the first fixing hole, so that the fixing piece is fixedly connected with the connecting column, and the first electrode is used as a first end of the impedance loop to be in electrical contact with the connecting column;

the adapter is connected between the fixing piece and the cavity, and electrically connects the second electrode with the cavity.

5. The semiconductor process chamber of claim 4, wherein the impedance loop further comprises at least one second fastener, the fixing member further comprises at least one second fixing through hole penetrating through the capacitor fixing surface, the adaptor member is provided with at least one second fixing hole corresponding to the second fixing through hole in a one-to-one manner, the second electrode is provided with at least one second avoiding hole corresponding to the second fixing through hole in a one-to-one manner, and the second fastener sequentially penetrates through the corresponding second fixing through hole and the second avoiding hole in a one-to-one manner and enters the second fixing hole so as to fixedly connect the fixing member with the adaptor member, electrically contact the second electrode with the adaptor member and electrically connect the second electrode with the cavity through the adaptor member.

6. The semiconductor processing chamber of claim 5, wherein the first fastening member is a screw, the first fixing hole is a threaded hole, the impedance loop further comprises a first flat washer and a first spring washer corresponding to the first fastening member one to one, the first flat washer and the first spring washer are both sleeved on the corresponding shank of the first fastening member, the first flat washer is located between the head of the first fastening member and the fixing member, and the first spring washer is located between the head of the first fastening member and the first flat washer;

the second fastening piece is a screw, the second fixing hole is a threaded hole, the impedance loop further comprises a second flat washer and a second elastic washer, the second flat washer and the second elastic washer are in one-to-one correspondence with the second fastening piece, the second flat washer and the second elastic washer are both sleeved on the corresponding nail rod of the second fastening piece, the second flat washer is located between the head of the second fastening piece and the fixing piece, and the second elastic washer is located between the head of the second fastening piece and the second flat washer.

7. The semiconductor processing chamber of claim 4, wherein the chamber body comprises a chamber body and a mounting cylinder, the chamber body has a bottom opening at the bottom, the mounting cylinder has a bottom end connected to and integrally formed with the bottom opening, the carrier plate seals the top end of the mounting cylinder, and the connecting column is located in the mounting cylinder;

the impedance loop further comprises at least one third fastening piece, at least one third fixing through hole is formed in the adapter piece, third fixing holes corresponding to the third fixing through holes one to one are formed in the bottom of the cavity body, and the third fastening pieces penetrate through the third fixing through holes one to one and enter the third fixing holes so as to fixedly connect the adapter piece and the cavity.

8. The semiconductor processing chamber of claim 7, wherein the third fastening member is a screw, the third fixing hole is a threaded hole, the impedance loop further comprises a third washer and a third washer spring corresponding to the third fastening member one to one, the third washer and the third washer spring are sleeved on the corresponding shank of the third fastening member, the third washer spring is located between the head of the third fastening member and the adapter, and the third washer spring is located between the head of the third fastening member and the third washer spring.

9. The semiconductor processing chamber of claim 7, further comprising a support member and an insulating member stacked around the connection post at a bottom of the susceptor and sealingly connecting the susceptor with a top end of the mounting cylinder, the insulating member being positioned between the support member and the top end of the mounting cylinder.

10. The semiconductor processing chamber of any of claims 2 to 9, wherein the capacitive element has a capacitance value of 600pF or greater.

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