TWM647933U - Light-emitting device with quantum dots - Google Patents

Abstract

A light-emitting device with quantum dots includes a light emitting diode (LED) chip, a transparent barrier layer, a quantum dot film, and a transparent protective layer. The transparent barrier layer is disposed on the LED chip. The quantum dot film is disposed on the transparent barrier layer, such that the LED chip is separated from the quantum dot film by the transparent barrier layer. The transparent protective layer is disposed on the quantum dot film, such that the quantum dot film is encapsulated between the transparent barrier layer and the transparent protective layer.

Description

Light-emitting device with quantum dots

The present invention relates to a light-emitting device composed of a light-emitting diode, in particular to a light-emitting device with quantum dots.

Quantum dots are used to be excited by light to produce an excitation spectrum. Therefore, quantum dots are often used to convert the wavelength of light-emitting diodes, so that the luminescence spectrum of the light-emitting device is not limited to the original luminescence spectrum of the light-emitting diode, and the required luminescence effect can be obtained. The existing application of quantum dots is to add semiconductor nanoparticles to a carrier substrate, and then directly cover the carrier substrate on a light-emitting diode chip to form a quantum dot film. The light emitted by the light-emitting diode chip passes through the quantum dot film, thereby exciting the quantum dots to generate excitation light.

The above settings pose two problems. When the light-emitting diode chip is energized and emits light, it also generates heat. The quantum dot film directly contacts the surface of the light-emitting diode chip, which easily causes rapid deterioration of the carrier substrate. Secondly, the carrier substrate is also directly exposed to the air, and contact with oxygen and moisture also makes the carrier substrate prone to degradation. The above two factors will cause the quantum dot film to rapidly deteriorate and affect the service life of the light-emitting diode light-emitting device.

In view of the above technical problems, the present invention proposes a light-emitting device with quantum dots to extend the life of the quantum dot film.

The invention proposes a light-emitting device with quantum dots, which includes a light-emitting diode chip, a transparent barrier layer, a quantum dot film and a transparent protective layer. The transparent barrier layer covers the light-emitting diode chip. The quantum dot film is placed on the transparent barrier layer, so that the light-emitting diode chip and the quantum dot film are separated by the transparent barrier layer. The transparent protective layer is disposed on the quantum dot film, so that the quantum dot film is covered between the transparent barrier layer and the transparent protective layer.

In at least one embodiment of the present invention, the light-emitting device with quantum dots further includes a base layer on which the light-emitting diode chip is temporarily or permanently disposed.

In at least one embodiment of the present invention, the material of the quantum dot film is an adhesive material that can be applied by dispensing or spraying.

In at least one embodiment of the present invention, the material of the transparent barrier layer is an adhesive material that can be applied by dispensing or spraying.

In at least one embodiment of the present invention, the material of the transparent protective layer is an adhesive material that can be applied by dispensing or spraying.

In at least one embodiment of the present invention, the material of the transparent protective layer is organic glue material mixed with nanoscale inorganic powder.

In at least one embodiment of the present invention, the material of the transparent protective layer is an inorganic material coating.

In at least one embodiment of the present invention, the transparent protective layer is a multi-layer structure composed of different materials.

In at least one embodiment of the present invention, the light-emitting device with quantum dots further includes a bracket including a bottom and a side portion extending from the edge of the bottom; wherein an accommodation space is formed between the bottom and the side portion, and the light-emitting diode chip It is fixed on the bottom, and the transparent barrier layer, the quantum dot film and the transparent protective layer are sequentially arranged on the light-emitting diode chip and located in the accommodation space.

In at least one embodiment of the present invention, a light-emitting device with quantum dots further includes multiple additional layers of quantum dot films and multiple additional layers of transparent protective layers, which are disposed above the transparent barrier layer, and each additional quantum dot film is wrapped Covered between two additional transparent protective layers.

Through the light-emitting device proposed in the present invention, the quantum dot film is sandwiched and wrapped between the transparent barrier layer and the transparent protective layer. The quantum dot film does not directly contact the high-temperature surface of the light-emitting diode chip and is also isolated from the outside air. Therefore, the new type of light-emitting device can effectively slow down the material degradation of the quantum dot film and extend the life of the light-emitting device. At the same time, the manufacturing method proposed by this new model can also produce luminescence in batches and maintain the required production capacity.

Referring to FIGS. 1 to 4 , a light-emitting device 100 with quantum dots disclosed in the first embodiment of the present invention includes a base layer 110 , at least one light-emitting diode chip 120 , a transparent barrier layer 130 , A quantum dot film 140 and a transparent protective layer 150.

As shown in FIGS. 1 and 2 , specifically, the base layer 110 is used for the light emitting diode chip 120 to be temporarily or permanently disposed thereon. For example, when the base layer 110 is a release film, the light-emitting diode chip 120 is temporarily disposed on the base layer 110, and the subsequently manufactured light-emitting device 100 can be peeled off from the base layer 110 and transferred to the backlight module substrate. (such as PCB or glass) or other circuit substrates for surface bonding, welding and other die-hardening operations. When the base layer 110 is a backlight module substrate or a circuit substrate, the light-emitting diode chip 120 is permanently disposed on the base layer 110 through surface bonding, welding and other die-solidification operations.

As shown in FIG. 1 , the light emitting diode chip 120 may be but is not limited to a blue LED. The quantum dot film 140 is a film containing light-emitting semiconductor nanoparticles. These particles can be excited by the light emitted by the light-emitting diode chip 120, and perform wavelength conversion on the light emitted by the light-emitting diode chip 120, so that the final wavelength of light emitted by the light-emitting device 100 conforms to the expected spectrum. For example, the light emitted by the light-emitting diode chip 120 can be The light emitted by the device 100 is finally adjusted to white light.

As shown in FIGS. 1 , 3 and 4 , the transparent barrier layer 130 covers the light-emitting diode chip 120 , and the quantum dot film 140 is disposed on the transparent barrier layer 130 , so that the light-emitting diode chip 120 and the quantum dot film 140 are disposed on the transparent barrier layer 130 . The dot films 140 are separated by transparent barrier layers 130 . Therefore, when the light-emitting diode chip 120 is energized and emits light, the high temperature generated by the light-emitting diode chip 120 will not directly affect the quantum dot film 140 . Specifically, the thickness of the quantum dot film 140 is between 20 and 200 μm, and the material can be photo-hardening glue mixed with nanoparticles and other glue materials that can be applied by dispensing or spraying. The thickness of the transparent barrier layer 130 is between 20 and 200 μm. The material of the transparent barrier layer 130 can be photo-hardening glue or other adhesive materials that can be applied by dispensing or spraying, and has a low thermal conductivity coefficient. The transparent barrier layer 130 can form a higher temperature difference between the surface of the light-emitting diode chip 120 and the quantum dot film 140, thereby preventing the lower surface of the quantum dot film 140 from directly bearing the high temperature of the light-emitting diode chip 120 and slowing down the quantum dots. The film 140 degrades due to heat.

As shown in FIG. 1 , the transparent protective layer 150 is disposed on the quantum dot film 140 so that the quantum dot film 140 is wrapped between the transparent barrier layer 130 and the transparent protective layer 150 to form a sandwich structure. The transparent protective layer 150 further isolates the quantum dot film 140 from contact with the outside air to prevent moisture or oxygen in the air from causing degradation of the quantum dot film 140 .

Specifically, the material of the transparent protective layer 150 can be a pure organic material, such as PE, or an adhesive material that can be quickly applied through dispensing or spraying, and the thickness can be between 20 and 200 μm. The organic material of the transparent protective layer 150 can also be further mixed with nanoscale inorganic powders, such as SiO2, TiO2 or Al2O3, to improve the rigidity and gas barrier properties of the transparent protective layer 150 and adjust the optical properties of the transparent protective layer 150. In addition, the transparent protective layer 150 may also be a coating made of inorganic materials, such as a coating made of inorganic materials such as Al2O3 formed through atomic layer deposition (ALD), with a thickness ranging from 10 to 500 nm. Specifically, the transparent protective layer 150 is suitable for covering and covering the quantum dot film 140 and isolating the quantum dot film 140 from contact with the outside air. Therefore, the material or arrangement method of the transparent protective layer 150 is not limited, as long as the quantum dot film 140 can be isolated. Just contact with the outside air.

As shown in FIG. 5 , in addition, the transparent protective layer 150 can also be a multi-layer structure composed of different materials. For example, a first transparent protective layer of inorganic material is first formed by dispensing glue, and then an Al2O3 coating is formed on the first transparent layer through ALD. A second transparent barrier layer is formed on the protective layer.

As shown in FIG. 1 , the light-emitting device 100 of the first embodiment may further include a bracket 160 . The bracket 160 may be made of base material, such as epoxy resin, or may be made of metal. The bracket 160 includes a bottom and side portions extending from the edge of the bottom. The side parts can surround the bottom, so that an accommodation space is formed between the bottom and the side parts. The bottom is used to be disposed on the base layer 110 , and the light-emitting diode chip 120 is fixed on the bottom, so that the light-emitting diode chip 120 is indirectly fixed to the base layer 110 through the bracket 160 . The transparent barrier layer 130, the quantum dot film 140 and the transparent protective layer 150 are sequentially disposed on the light-emitting diode chip 120 and located in the accommodation space. Since the bottom and sides form a container shape with an accommodation space, the transparent barrier layer 130 , the quantum dot film 140 and the transparent protective layer 150 can all be disposed in the accommodation space through dispensing operations. When mass-producing the light-emitting device 100, multiple brackets 160 can be arranged in an array on the base layer 110, and the dispensing operation can be performed simultaneously through multiple array-arranged dispensing nozzles, and at the same time, multiple brackets 160 can be placed in an array. The adhesive material forming the transparent barrier layer 130, the quantum dot film 140 and the transparent protective layer 150 is sequentially injected to achieve the effect of mass production.

As shown in FIGS. 1 to 6 , based on the above-mentioned light-emitting device 100 with quantum dots, the first embodiment of the present invention further provides a method for manufacturing a light-emitting device.

As shown in FIGS. 2 and 6 , the manufacturing method first provides one or more light-emitting diode chips 120 and disposes the light-emitting diode chips 120 on the base layer 110 , as shown in step S110 .

Specifically, step S110 can also be subdivided into multiple sub-steps. First, one or more brackets 160 are provided and arranged on the base layer 110 , as shown in step S112 . Next, the light-emitting diode chip 120 is fixed on the bottom of the bracket 160, as shown in step S114.

The order of steps S112 and S114 is not limited, as long as the light-emitting diode chip 120 can be indirectly placed on the base layer 110 through the bracket 160 . Therefore, in step S110 , step S114 may be performed first to fix the light-emitting diode chip 120 on the bottom, and then step S112 may be performed to dispose the bracket 160 on the base layer 110 .

As shown in FIGS. 3 and 6 , glue is then dispensed into the accommodation space of the bracket 160 , and glue to form the transparent barrier layer 130 is injected. After the glue is cured, a transparent layer covering the light-emitting diode chip 120 is formed. Barrier layer 130, as shown in step S120.

As shown in Figures 4 and 6, glue is dispensed in the accommodation space of the bracket 160, and glue to form the quantum dot film 140 is injected. After the glue is cured, the quantum dot film 140 is formed on the transparent barrier layer 130. As shown in step S130.

As shown in FIGS. 1 and 6 , finally, glue is dispensed into the accommodation space of the bracket 160 , and glue to form the transparent protective layer 150 is injected. After the glue is cured, a transparent protective layer is formed on the quantum dot film 140 150, so that the quantum dot film 140 is covered between the transparent barrier layer 130 and the transparent protective layer 150, as shown in step S140.

As shown in FIG. 5 , step S140 can be performed multiple times using the same or different glue materials to form a multi-layer transparent protective layer 150 .

In addition, as shown in FIG. 7 , steps S130 to S140 can also be executed multiple times in a loop, that is, repeatedly setting the quantum dot film 140 on the transparent protective layer 150 , and then setting the transparent protective layer 150 on the quantum dot film 140 to make it transparent. There are multiple additional layers of quantum dot films 140 and multiple additional layers of transparent protective layers 150 above the barrier layer 130 . Furthermore, each additional quantum dot film 140 is wrapped between two additional transparent protective layers 150 . Each additional quantum dot film 140 can be configured with a different excitation spectrum, so that the spectrum finally emitted by the light-emitting device 100 meets the requirements.

Please refer to FIGS. 8 to 15 , which illustrate a light-emitting device 100 with quantum dots and a manufacturing method of the light-emitting device disclosed in the second embodiment of the present invention. According to the manufacturing method of the light-emitting device of the second embodiment, the provision of the bracket 160 is omitted, and mass production is achieved through a method different from dispensing.

As shown in FIGS. 8 , 9 and 15 , the manufacturing method first provides one or more light-emitting diode chips 120 and disposes the light-emitting diode chips 120 on the base layer 110 , as shown in step S210 . In this embodiment, the base layer 110 is a release film, and the base layer 110 will be released in subsequent steps. The plurality of light emitting diode chips 120 can be disposed on the base layer 110 through a Pick and Place process (P & P).

As shown in FIGS. 10 and 15 , processes such as spraying, coating, and molding are then performed on the upper surface of the base layer 110 so that the transparent barrier layer 130 covers the light-emitting diode chip 120 and the base layer 110 . As shown in step S220.

As shown in FIGS. 11 and 15 , the transparent barrier layer 130 is further sprayed, coated, molded, and other processes are performed to make the quantum dot film 140 cover the transparent barrier layer 130 , as shown in step S230 .

As shown in FIGS. 12 and 15 , processes such as spraying, coating, and molding are performed on the quantum dot film 140 so that the transparent protective layer 150 covers the quantum dot film 140 , as shown in step S240 .

Like the first embodiment, step S240 can be performed multiple times, using the same or different materials for spraying, coating, molding and other processes to form the transparent protective layer 150 of a multi-layer structure. Or, in addition, steps S230 to S240 are executed multiple times in a loop, so that there are multiple additional layers of quantum dot films 140 and multiple additional layers of transparent protective layers 150 above the transparent barrier layer 130 .

As shown in FIG. 13 and FIG. 15 , then, the base layer 110 is peeled off, and a cutting process is performed on the transparent barrier layer 130 , the quantum dot film 140 and the transparent protective layer 150 to form a plurality of light-emitting devices each including one light-emitting diode chip 120 . 100, as shown in step S250. The cutting procedure can be water jet cutting or laser cutting.

As shown in FIGS. 14 and 15 , finally, the Pick and Place process (P & P) is executed to fix multiple light-emitting devices 100 on a fixed substrate 170 , such as a backlight module substrate, to form a light-emitting device with multiple light-emitting devices 100 . A light-emitting module, as shown in step S260.

Through the light-emitting device 100 and its manufacturing method proposed in the present invention, the quantum dot film 140 is sandwiched and covered between the transparent barrier layer 130 and the transparent protective layer 150 . The quantum dot film 140 will not directly contact the high-temperature surface of the light-emitting diode chip 120 and is also isolated from the outside air. Therefore, the new light-emitting device 100 of the present invention can effectively slow down the material degradation of the quantum dot film 140 and extend the life of the light-emitting device 100 . At the same time, the manufacturing method proposed by the present invention can also produce the light-emitting devices 100 in batches to maintain the required production capacity.

100:Lighting device 110: Basal layer 120:LED chip 130:Transparent barrier layer 140:Quantum dot film 150:Transparent protective layer 160:Bracket 170: Fixed base plate S110~S140: steps S210~S250: steps

Figure 1 is a schematic cross-sectional view of a light-emitting device with quantum dots in the first embodiment of the present invention. 2 to 4 are schematic cross-sectional views of a semi-finished product of a light-emitting device with quantum dots in the first embodiment of the present invention. FIG. 5 is a schematic cross-sectional view of a light-emitting device with quantum dots in a variation of the first embodiment of the present invention. FIG. 6 is a flow chart of a manufacturing method of a light-emitting device in the first embodiment of the present invention. 7 is a schematic cross-sectional view of a light-emitting device with quantum dots in another variation of the first embodiment of the present invention. 8 to 13 are schematic cross-sectional views of a semi-finished product of a light-emitting device with quantum dots in the second embodiment of the present invention. Figure 14 is a schematic cross-sectional view of a light-emitting device with quantum dots in the second embodiment of the present invention. FIG. 15 is a flow chart of a manufacturing method of a light-emitting device in the first embodiment of the present invention.

100:Lighting device

110: Basal layer

120:LED chip

130:Transparent barrier layer

140:Quantum dot film

150:Transparent protective layer

160:Bracket

Claims (10)

A light-emitting device with quantum dots, comprising: a light-emitting diode chip; a transparent barrier layer covering the light-emitting diode chip; A quantum dot film is disposed on the transparent barrier layer so that the light-emitting diode chip and the quantum dot film are separated by the transparent barrier layer; and A transparent protective layer is disposed on the quantum dot film so that the quantum dot film is covered between the transparent barrier layer and the transparent protective layer. The light-emitting device with quantum dots as claimed in claim 1 further includes a base layer on which the light-emitting diode chip is temporarily or permanently disposed. The light-emitting device with quantum dots as claimed in claim 1, wherein the material of the quantum dot film is an adhesive material that can be applied by dispensing or spraying. The light-emitting device with quantum dots as claimed in claim 1, wherein the material of the transparent barrier layer is an adhesive material that can be applied by dispensing or spraying. The light-emitting device with quantum dots as claimed in claim 1, wherein the material of the transparent protective layer is an adhesive material that can be applied by dispensing or spraying. The light-emitting device with quantum dots as claimed in claim 1, wherein the transparent protective layer is made of nanoscale inorganic powder mixed with organic glue. The light-emitting device with quantum dots as claimed in claim 1, wherein the transparent protective layer is made of an inorganic material coating. The light-emitting device with quantum dots as claimed in claim 1, wherein the transparent protective layer is a multi-layer structure composed of different materials. The light-emitting device with quantum dots as claimed in claim 1, further comprising a bracket including a bottom and a side portion extending from the edge of the bottom; wherein an accommodation space is formed between the bottom and the side portion, and the two light-emitting devices The polar body chip is fixed on the bottom, and the transparent barrier layer, the quantum dot film and the transparent protective layer are sequentially disposed on the light-emitting diode chip and located in the accommodation space. The light-emitting device with quantum dots as claimed in claim 1, further comprising multiple additional layers of quantum dot films and multiple additional layers of transparent protective layers, disposed above the transparent barrier layer, and each of the additional quantum dot films is wrapped Covered between two additional transparent protective layers.

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