CN220821608U - Light emitting device with quantum dots - Google Patents
Light emitting device with quantum dots Download PDFInfo
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- CN220821608U CN220821608U CN202321887768.6U CN202321887768U CN220821608U CN 220821608 U CN220821608 U CN 220821608U CN 202321887768 U CN202321887768 U CN 202321887768U CN 220821608 U CN220821608 U CN 220821608U
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- emitting device
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- 239000010410 layer Substances 0.000 claims abstract description 83
- 230000004888 barrier function Effects 0.000 claims abstract description 45
- 239000011241 protective layer Substances 0.000 claims abstract description 39
- 239000000463 material Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 21
- 239000003292 glue Substances 0.000 claims description 18
- 238000005507 spraying Methods 0.000 claims description 13
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000000576 coating method Methods 0.000 claims description 5
- 229910010272 inorganic material Inorganic materials 0.000 claims description 5
- 239000011147 inorganic material Substances 0.000 claims description 5
- 239000010408 film Substances 0.000 description 57
- 238000004519 manufacturing process Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 6
- 230000015556 catabolic process Effects 0.000 description 5
- 238000006731 degradation reaction Methods 0.000 description 5
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- 238000000231 atomic layer deposition Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 3
- 239000002105 nanoparticle Substances 0.000 description 3
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- 229910001845 yogo sapphire Inorganic materials 0.000 description 3
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- 238000005520 cutting process Methods 0.000 description 2
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- 238000010923 batch production Methods 0.000 description 1
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Abstract
The utility model relates to a light-emitting device with quantum dots, which comprises a light-emitting diode chip, a transparent barrier layer, a quantum dot film and a transparent protective layer. The transparent barrier layer covers the light-emitting diode chip. The quantum dot film is arranged on the transparent barrier layer, so that the light emitting diode chip and the quantum dot film are separated by the transparent barrier layer. The transparent protective layer is arranged on the quantum dot film, so that the quantum dot film is coated between the transparent barrier layer and the transparent protective layer.
Description
Technical Field
The present utility model relates to a light emitting device comprising light emitting diodes, and more particularly to a light emitting device with quantum dots.
Background
The quantum dots are used for being excited by light to generate an excitation spectrum. Therefore, quantum dots are often used to convert the wavelength of the light emitting diode, so that the light emitting spectrum of the light emitting device is not limited to the original light emitting spectrum of the light emitting diode, and the required light emitting effect is obtained. The existing quantum dot application is to add semiconductor nano particles into a carrier substrate, and directly cover the carrier substrate on a light-emitting diode chip to form a quantum dot film. Light emitted by the light-emitting diode chip passes through the quantum dot film to excite the quantum dot to generate excitation light.
The above arrangement creates two problems. The LED chip emits heat when being electrified, and the quantum dot film is directly connected with the surface of the trigger LED chip, so that the carrier substrate is easy to deteriorate rapidly. Second, the carrier substrate is also directly exposed to air, while being exposed to oxygen and moisture, also contributing to the degradation (degrade) degradation of the carrier substrate. Both of the above factors can cause rapid deterioration of the quantum dot film, which affects the service life of the light emitting diode light emitting device.
Disclosure of utility model
In view of the above technical problems, the present utility model provides a light emitting device with quantum dots for prolonging the lifetime of a quantum dot film.
The utility model provides a light-emitting device with quantum dots, which comprises a light-emitting diode chip, a transparent barrier layer, a quantum dot film and a transparent protective layer. The transparent barrier layer covers the light-emitting diode chip. The quantum dot film is arranged on the transparent barrier layer, so that the light emitting diode chip and the quantum dot film are separated by the transparent barrier layer. The transparent protective layer is arranged on the quantum dot film, so that the quantum dot film is coated between the transparent barrier layer and the transparent protective layer.
Preferably, the light emitting device with quantum dots further comprises a substrate layer for temporarily or permanently disposing the light emitting diode chip thereon.
Preferably, the material of the quantum dot film is a glue material which can be coated in a dispensing and spraying mode.
Preferably, the transparent barrier layer is made of a glue material which can be coated by dispensing and spraying.
Preferably, the transparent protective layer is made of a glue material which can be coated by dispensing and spraying.
Preferably, the transparent protective layer is made of inorganic material.
Preferably, the transparent protective layer is a multi-layered structure composed of different materials.
Preferably, the light emitting device with quantum dots further comprises a support including a bottom and a side extending from the edge of the bottom; the light emitting diode chip is fixed on the bottom, and the transparent barrier layer, the quantum dot film and the transparent protective layer are sequentially arranged on the light emitting diode chip and positioned in the accommodating space.
Preferably, the light emitting device with quantum dots further comprises a plurality of additional quantum dot films and a plurality of additional transparent protective layers, disposed over the transparent barrier layer, and each additional quantum dot film is encased between two additional transparent protective layers.
According to the light-emitting device provided by the utility model, the quantum dot film is clamped and coated between the transparent barrier layer and the transparent protective layer. The quantum dot film is not directly connected with the high-temperature surface of the trigger light-emitting diode chip and is isolated from the outside air. Therefore, the light-emitting device can effectively slow down the material degradation of the quantum dot film and prolong the service life of the light-emitting device. Meanwhile, the manufacturing method provided by the utility model can also realize batch production of luminescence and maintain the required productivity.
Drawings
Fig. 1 is a schematic cross-sectional view of a light emitting device with quantum dots according to a first embodiment of the present utility model.
Fig. 2 to 4 are schematic cross-sectional views of semi-finished products of a light emitting device having quantum dots according to a first embodiment of the present utility model.
Fig. 5 is a schematic cross-sectional view of a light emitting device with quantum dots according to a variation of the first embodiment of the present utility model.
Fig. 6 is a flowchart of a method of manufacturing a light emitting device according to a first embodiment of the present utility model.
Fig. 7 is a schematic cross-sectional view of a light emitting device with quantum dots according to another variation of the first embodiment of the present utility model.
Fig. 8 to 13 are schematic cross-sectional views of semi-finished products of a light emitting device having quantum dots according to a second embodiment of the present utility model.
Fig. 14 is a schematic cross-sectional view of a light emitting device with quantum dots according to a second embodiment of the present utility model.
Fig. 15 is a flowchart of a method of manufacturing a light emitting device in the first embodiment of the present utility model.
Reference numerals illustrate: 100-a light emitting device; 110-a substrate layer; 120-light emitting diode chips; 130-a transparent barrier layer; 140-quantum dot film; 150-a transparent protective layer; 160-a bracket; 170-fixing the substrate;
S110-S140-step; S210-S250.
Detailed Description
Referring to fig. 1 to fig. 4, a light emitting device 100 with quantum dots according to a first embodiment of the present utility model includes a substrate layer 110, at least one light emitting diode chip 120, a transparent barrier layer 130, a quantum dot film 140, and a transparent protection layer 150.
As shown in fig. 1 and 2, specifically, the base layer 110 is used for the led chip 120 to be temporarily or permanently disposed thereon. For example, when the base layer 110 is a release film, the led chip 120 is temporarily disposed on the base layer 110, and the light emitting device 100 after being fabricated can be peeled off from the base layer 110 to be transferred onto a backlight module substrate (e.g. PCB or glass) or other circuit substrates for surface adhesion, soldering, and other die bonding operations. When the base layer 110 is a backlight module substrate or a circuit substrate, the led chip 120 is permanently disposed on the base layer 110 through surface adhesion, soldering, or other die bonding operations.
As shown in fig. 1, the light emitting diode chip 120 may be, but is not limited to, a blue LED. The quantum dot thin film 140 is a thin film including light emitting semiconductor nanoparticles. The particles may be excited by the light emitted by the led chip 120, and wavelength-convert the light emitted by the led chip 120, so that the light emitting wavelength finally emitted by the light emitting device 100 conforms to the expected spectrum, for example, the light finally emitted by the light emitting device 100 may be adjusted to white light.
As shown in fig. 1, 3 and 4, the transparent barrier layer 130 covers the light emitting diode chip 120, and the quantum dot film 140 is disposed on the transparent barrier layer 130, so that the light emitting diode chip 120 and the quantum dot film 140 are separated by the transparent barrier layer 130. Therefore, when the light emitting diode chip 120 emits light when energized, the high temperature generated by the light emitting diode chip 120 does not directly affect the quantum dot film 140. Specifically, the thickness of the quantum dot film 140 is 20-200 μm (micrometers), and the material may be a glue material such as photo-curing glue mixed nano particles, which can be coated by dispensing and spraying. The transparent barrier layer 130 has a thickness of 20-200 μm, and may be a glue material such as photo-hardening glue, which may be applied by dispensing or spraying, and has a low thermal conductivity. The transparent barrier layer 130 can form a higher temperature difference between the surface of the light emitting diode chip 120 and the quantum dot film 140, so as to prevent the lower surface of the quantum dot film 140 from directly bearing the high temperature of the light emitting diode chip 120 and slow down the degradation of the quantum dot film 140 caused by heating (degrade).
As shown in fig. 1, the transparent protection layer 150 is disposed on the quantum dot film 140, so that the quantum dot film 140 is coated between the transparent barrier layer 130 and the transparent protection layer 150 to form a sandwich structure. The transparent protection layer 150 further isolates the quantum dot film 140 from contacting with the outside air, so as to avoid degradation of the quantum dot film 140 caused by moisture or oxygen in the air.
Specifically, the transparent protective layer 150 may be made of pure organic material, such as PE, or may be made of glue that can be rapidly coated by dispensing or spraying, and has a thickness of 20-200 μm. The organic material of the transparent protective layer 150 may further be mixed with nano-scale inorganic powder, such as SiO2, tiO2 or Al2O3, to improve the rigidity and gas barrier properties of the transparent protective layer 150 and to adjust the optical properties of the transparent protective layer 150. The transparent protective layer 150 may be a film made of an inorganic material, for example, a film made of an inorganic material such as Al2O3 (alumina) formed by atomic layer deposition (atomic layer deposition, ALD), and has a thickness of 10 to 500 nm. Specifically, the transparent protection layer 150 is suitable for covering and covering the quantum dot film 140, and isolating the quantum dot film 140 from the external air, so the material or the arrangement of the transparent protection layer 150 is not limited, as long as the quantum dot film 140 is isolated from the external air.
As shown in fig. 5, the transparent protection layer 150 may be a multi-layer structure made of different materials, for example, a first transparent protection layer made of inorganic material is formed by dispensing, and then an Al2O3 film formed by ALD is coated on the first transparent protection layer to form a second transparent barrier layer.
As shown in fig. 1, the light emitting device 100 of the first embodiment may further include a stand 160. The bracket 160 may be made of a base material, such as epoxy, or a metal material. The bracket 160 includes a bottom and sides extending from the bottom edge. The side part can encircle the bottom part, so that a containing space is formed between the bottom part and the side part. The bottom portion is configured to be disposed on the base layer 110, and the led chip 120 is fixed to the bottom portion, such that the led chip 120 is indirectly fixed to the base layer 110 through the bracket 160. The transparent barrier layer 130, the quantum dot film 140 and the transparent protective layer 150 are sequentially disposed on the led chip 120 and located in the accommodating space. Since the bottom and the side portions form a container shape having a receiving space, the transparent barrier layer 130, the quantum dot film 140, and the transparent protective layer 150 can be disposed in the receiving space through dispensing operation. In mass production of the light emitting device 100, the plurality of supports 160 may be arranged in an array on the substrate layer 110, and the dispensing operation may be performed simultaneously by a plurality of dispensing nozzles arranged in an array, and the glue materials for forming the transparent barrier layer 130, the quantum dot film 140 and the transparent protective layer 150 are sequentially injected into the plurality of supports 160 at the same time, so as to achieve the effect of mass production.
As shown in fig. 1 to 6, based on the light emitting device 100 with quantum dots, the first embodiment of the present utility model further proposes a method for manufacturing the light emitting device.
As shown in fig. 2 and fig. 6, the manufacturing method first provides one or more led chips 120, and the led chips 120 are disposed on the substrate layer 110, as shown in step S110.
Specifically, step S110 may be further subdivided into a plurality of sub-steps. First, one or more brackets 160 are provided, and the brackets 160 are disposed on the substrate layer 110, as shown in step S112. Next, the led chip 120 is fixed to the bottom of the bracket 160, as shown in step S114.
The order of the steps S112 and S114 is not limited, as long as the led chip 120 can be indirectly disposed on the substrate layer 110 through the bracket 160. Therefore, in step S110, step S114 may be performed first, the light emitting diode chip 120 may be fixed to the bottom, and then step S112 may be performed, where the mount 160 is disposed on the base layer 110.
As shown in fig. 3 and fig. 6, glue is dispensed into the accommodating space of the bracket 160, and a glue material for forming the transparent barrier layer 130 is injected, and the glue material is cured to form the transparent barrier layer 130 covering the led chip 120, as shown in step S120.
As shown in fig. 4 and fig. 6, dispensing is performed in the accommodating space of the bracket 160, and a glue material for forming the quantum dot film 140 is injected, and after curing, the quantum dot film 140 disposed on the transparent barrier layer 130 is formed, as shown in step S130.
As shown in fig. 1 and fig. 6, finally, dispensing is performed in the accommodating space of the bracket 160, the glue material for forming the transparent protection layer 150 is injected, and the transparent protection layer 150 disposed on the quantum dot film 140 is formed after the glue material is cured, so that the quantum dot film 140 is wrapped between the transparent barrier layer 130 and the transparent protection layer 150, as shown in step S140.
As shown in fig. 5, step S140 may be performed multiple times, and the same or different adhesive materials are used to form the transparent protection layer 150 with a multi-layer structure.
In addition, as shown in fig. 7, steps S130 to S140 may be performed repeatedly, that is, the quantum dot film 140 is repeatedly disposed on the transparent protective layer 150, and then the transparent protective layer 150 is disposed on the quantum dot film 140, so that a plurality of additional quantum dot films 140 and a plurality of additional transparent protective layers 150 are disposed above the transparent barrier layer 130, and further each additional quantum dot film 140 is wrapped between two additional transparent protective layers 150. Each additional quantum dot film 140 may be configured with a different excitation spectrum such that the spectrum ultimately emitted by the light emitting device 100 meets the requirements.
Referring to fig. 8 to 15, a light emitting device 100 with quantum dots and a method for manufacturing the same are disclosed in a second embodiment of the present utility model. According to the manufacturing method of the light emitting device of the second embodiment, the setting of the holder 160 is omitted, and mass production is achieved by a manner different from dispensing.
As shown in fig. 8, 9 and 15, the manufacturing method first provides one or more led chips 120, and the led chips 120 are disposed on the substrate layer 110, as shown in step S210. In this embodiment, the base layer 110 is a release film, and the base layer 110 will be pulled off in a subsequent step. The plurality of led chips 120 may be disposed on the base layer 110 by PICK AND PLACE processes (P & P).
As shown in fig. 10 and 15, next, a procedure such as spraying, coating, molding (Molding) is performed on the upper surface of the base layer 110, so that the transparent barrier layer 130 covers the light emitting diode chip 120 and the base layer 110, as shown in step S220.
As shown in fig. 11 and 15, the transparent barrier layer 130 is further subjected to spraying, coating, molding, etc. to cover the quantum dot film 140 on the transparent barrier layer 130, as shown in step S230.
As shown in fig. 12 and 15, the quantum dot film 140 is subjected to spraying, coating, molding, etc. to cover the quantum dot film 140 with the transparent protective layer 150, as shown in step S240.
As in the first embodiment, step S240 may be performed a plurality of times, and the same or different materials are used for spraying, coating, molding, etc. to form the transparent protective layer 150 having a multi-layered structure. Alternatively, the steps S230 to S240 are repeated a plurality of times, so that a plurality of additional quantum dot thin films 140 and a plurality of additional transparent protective layers 150 are disposed over the transparent barrier layer 130.
As shown in fig. 13 and 15, the base layer 110 is peeled off, and a dicing process is performed on the transparent barrier layer 130, the quantum dot film 140 and the transparent protective layer 150 to form a plurality of light emitting devices 100 each including one light emitting diode chip 120, as shown in step S250. The cutting process can be water knife cutting or laser cutting.
As shown in fig. 14 and 15, finally, PICK AND PLACE (P & P) is performed to fix the light-emitting devices 100 on a fixed substrate 170, such as a backlight module substrate, to form a light-emitting module having the light-emitting devices 100, as shown in step S260.
According to the light emitting device 100 and the method for manufacturing the same, the quantum dot film 140 is sandwiched and coated between the transparent barrier layer 130 and the transparent protective layer 150. The quantum dot film 140 is not directly connected to the high temperature surface of the led chip 120, and is also isolated from the outside air. Therefore, the light emitting device 100 of the present utility model can effectively slow down the degradation of the material of the quantum dot film 140, and prolong the lifetime of the light emitting device 100. Meanwhile, the manufacturing method provided by the utility model can also be used for mass production of the light-emitting device 100 to maintain the required productivity.
The foregoing description of the preferred embodiments of the utility model is not intended to limit the scope of the utility model, but rather to cover all modifications and variations in the shape, construction, characteristics and spirit of the utility model as defined in the claims.
Claims (9)
1. A light emitting device having quantum dots, comprising:
A light emitting diode chip;
A light emitting diode chip;
a transparent barrier layer covering the light emitting diode chip;
The quantum dot film is arranged on the transparent barrier layer, so that the light-emitting diode chip and the quantum dot film are separated by the transparent barrier layer; and
And the transparent protective layer is arranged on the quantum dot film, so that the quantum dot film is coated between the transparent barrier layer and the transparent protective layer.
2. The light-emitting device with quantum dots of claim 1, further comprising a substrate layer for temporary or permanent placement of the light-emitting diode chip thereon.
3. The light-emitting device with quantum dots according to claim 1, wherein the quantum dot film is made of a glue material which can be coated by dispensing or spraying.
4. The light-emitting device with quantum dots according to claim 1, wherein the transparent barrier layer is made of a glue material which can be coated by dispensing or spraying.
5. The light-emitting device with quantum dots according to claim 1, wherein the transparent protective layer is made of a glue material coated by dispensing or spraying.
6. The light-emitting device with quantum dots according to claim 1, wherein the transparent protective layer is a coating film made of an inorganic material.
7. The light-emitting device with quantum dots according to claim 1, wherein the transparent protective layer is a multilayer structure composed of different materials.
8. The light-emitting device with quantum dots of claim 1, further comprising a stand comprising a bottom and sides extending from the bottom edge; the light-emitting diode chip is fixed on the bottom, and the transparent barrier layer, the quantum dot film and the transparent protective layer are sequentially arranged on the light-emitting diode chip and are positioned in the accommodating space.
9. The quantum dot light emitting apparatus of claim 1, further comprising a plurality of additional quantum dot films and a plurality of additional transparent protective layers disposed over the transparent barrier layer, and wherein each of the additional quantum dot films is encased between two of the additional transparent protective layers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321887768.6U CN220821608U (en) | 2023-07-18 | 2023-07-18 | Light emitting device with quantum dots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321887768.6U CN220821608U (en) | 2023-07-18 | 2023-07-18 | Light emitting device with quantum dots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220821608U true CN220821608U (en) | 2024-04-19 |
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ID=90699143
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321887768.6U Active CN220821608U (en) | 2023-07-18 | 2023-07-18 | Light emitting device with quantum dots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220821608U (en) |
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2023
- 2023-07-18 CN CN202321887768.6U patent/CN220821608U/en active Active
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