CN220856603U - Optical element and light-emitting device with quantum dots - Google Patents
Optical element and light-emitting device with quantum dots Download PDFInfo
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- CN220856603U CN220856603U CN202321903139.8U CN202321903139U CN220856603U CN 220856603 U CN220856603 U CN 220856603U CN 202321903139 U CN202321903139 U CN 202321903139U CN 220856603 U CN220856603 U CN 220856603U
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 96
- 230000003287 optical effect Effects 0.000 title claims abstract description 61
- 230000001681 protective effect Effects 0.000 claims abstract description 43
- 239000002105 nanoparticle Substances 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 41
- 238000000576 coating method Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 6
- 229910010272 inorganic material Inorganic materials 0.000 claims description 4
- 239000011147 inorganic material Substances 0.000 claims description 4
- 239000010408 film Substances 0.000 description 139
- 239000010409 thin film Substances 0.000 description 24
- 239000000463 material Substances 0.000 description 11
- 239000000178 monomer Substances 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 10
- 239000003292 glue Substances 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 5
- 238000000231 atomic layer deposition Methods 0.000 description 4
- 229910052593 corundum Inorganic materials 0.000 description 4
- 229910001845 yogo sapphire Inorganic materials 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000015556 catabolic process Effects 0.000 description 3
- 238000006731 degradation reaction Methods 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000000016 photochemical curing Methods 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000000695 excitation spectrum Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000005297 material degradation process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
Abstract
The utility model relates to an optical element and a light-emitting device with quantum dots, wherein the optical element comprises a quantum dot film layer, a lower transparent film layer and an outer protective film. The quantum dot film layer is provided with an upper surface, a lower surface and side surfaces; the side surface connects the upper surface and the lower surface, and the quantum dot film layer is a film containing luminescent semiconductor nano particles. The lower transparent film layer is arranged on the lower surface of the quantum dot film layer. The external protective film directly or indirectly covers the upper surface of the quantum dot film layer and extends to cover the side surface of the quantum dot film layer.
Description
Technical Field
The present utility model relates to a light emitting device comprising light emitting diodes, and more particularly to an optical element and a light emitting device having quantum dots.
Background
The quantum dots are used for being excited by light to generate an excitation spectrum. Therefore, quantum dots are often used to convert the wavelength of the light emitting diode, so that the light emitting spectrum of the light emitting device is not limited to the original light emitting spectrum of the light emitting diode, and the required light emitting effect is obtained. The existing quantum dot application is to add semiconductor nano particles into a carrier substrate, and directly cover the carrier substrate on a light emitting diode chip to form a quantum dot film layer which is used as an optical element of the light emitting diode chip. Light emitted by the light-emitting diode chip passes through the quantum dot film layer to excite the quantum dots to generate excitation light.
The quantum dot film layer is usually manufactured into a large-area quantum dot film sheet by coating on a substrate layer, and then is cut to form the quantum dot film layer suitable for the size of the light-emitting diode chip. Transparent film layers are additionally arranged above and below the quantum dot film sheets to protect the upper surface and the lower surface and prevent the quantum dot film from being directly exposed to air to contact oxygen and water vapor. However, after the large-area quantum dot film is cut to form a quantum dot film layer suitable for the size of the light emitting diode chip, the quantum dot film layer is directly exposed and still contacts oxygen and moisture, so that the carrier substrate is still easy to degrade (degrade) and deteriorate, and the service life of the light emitting diode light emitting device is further affected.
Disclosure of utility model
In view of the above-mentioned problems, the present utility model provides an optical element and a light emitting device with quantum dots for prolonging the lifetime of a quantum dot thin film layer.
The utility model provides an optical element, which comprises a quantum dot film layer, a lower transparent film layer and an outer protective film. The quantum dot film layer is provided with an upper surface, a lower surface and side surfaces; the side surface connects the upper surface and the lower surface, and the quantum dot film layer is a film containing luminescent semiconductor nano particles. The lower transparent film layer is arranged on the lower surface of the quantum dot film layer. The outer protective film directly or indirectly covers the upper transparent film layer and extends to cover the side face of the quantum dot film layer.
Preferably, the outer protective film is a coating film of an inorganic material.
Preferably, the thickness of the outer protective film is between 10 and 500 nm.
Preferably, the optical element further comprises an upper transparent film layer disposed on the upper surface of the quantum dot film layer and located between the upper surface and the outer protective film.
Preferably, the thickness of the lower transparent film layer and the upper transparent film layer is between 20 and 200 μm.
The utility model also provides a light-emitting device with quantum dots, which comprises a substrate, a light-emitting diode chip and the optical element. The light emitting diode chip is arranged on the substrate. The transparent film layer below the optical element faces the light-emitting diode chip and is fixed on the light-emitting diode chip.
Preferably, the outer protective film extends to a portion of the substrate not covered by the optical element.
By adopting the light-emitting device and the manufacturing method thereof provided by the utility model, the quantum dot film layer is completely covered by the outer protective film, and the quantum dot film layer has no exposed part, so that the quantum dot film layer can be effectively isolated from the outside air by the outer protective film. Therefore, the light-emitting device can effectively slow down the material degradation of the quantum dot film layer and prolong the service life of the light-emitting device. Meanwhile, the manufacturing method provided by the utility model can also be used for mass production of the light-emitting device, so that the required productivity is maintained.
Drawings
Fig. 1 to 4 are schematic cross-sectional views of semi-finished products of a light emitting device having quantum dots according to a first embodiment of the present utility model.
Fig. 5 is a schematic cross-sectional view of a light emitting device with quantum dots according to a first embodiment of the present utility model.
Fig. 6 is a schematic cross-sectional view of an optical element according to a first embodiment of the present utility model.
Fig. 7 is another schematic cross-sectional view of an optical element according to a first embodiment of the present utility model.
Fig. 8 is a flowchart of a method of manufacturing a quantum dot light emitting device according to a first embodiment of the present utility model.
Fig. 9 to 10 are schematic cross-sectional views of semi-finished products of a light emitting device having quantum dots according to a second embodiment of the present utility model.
Fig. 11 is a schematic cross-sectional view of an optical element according to a second embodiment of the present utility model.
Fig. 12 is a flowchart of a method of manufacturing a quantum dot light emitting device according to the first embodiment of the present utility model.
Reference numerals illustrate: 100-an optical element with quantum dots; 110-quantum dot film layer; 112-lower surface; 114-upper surface; 116-side; 120-a lower transparent film layer; 130-upper transparent film layer; 140-an outer protective film; 200-a light emitting device; 210-a substrate; 220-a light emitting diode chip; 310-substrate layer.
Detailed Description
Referring to fig. 1 to 6, an optical device 100 with quantum dots and a light emitting device 200 with the optical device 100 according to a first embodiment of the utility model are shown.
As shown in fig. 1, the optical element 100 has a quantum dot thin film layer 110, a lower transparent film layer 120, an upper transparent film layer 130, and an outer protective film 140.
As shown in fig. 1-6, the quantum dot film layer 110 has a lower surface 112, an upper surface 114, a lower surface 112, and a side 116 connecting the upper surface 114 and the lower surface 112. The quantum dot thin film layer 110 is a thin film containing luminescent semiconductor nanoparticles. The particles may be excited by the light emitted by the led chip 220, and wavelength-convert the light emitted by the led chip 220, so that the light emitting wavelength finally emitted by the light emitting device 200 matches the expected spectrum, for example, the light finally emitted by the light emitting device 200 may be adjusted to white light.
As shown in fig. 1 to 2, the lower transparent film layer 120 is disposed on the lower surface 112 of the quantum dot film layer 110. The outer protective film 140 directly or indirectly covers the upper surface 114 and further extends to cover the side 116 of the quantum dot thin film layer 110 such that the lower transparent film layer 120 and the side 116 of the quantum dot thin film layer 110 are covered by the outer protective film 140 without being exposed to air.
Specifically, the upper transparent film layer 130 is disposed on the upper surface 114 of the quantum dot film layer 110, and is located between the upper surface 114 and the outer protective film 140. In other words, the outer protective film 140 indirectly covers the upper surface 114 of the quantum dot thin film layer 110 and extends to cover the side 116 of the quantum dot thin film layer 110. The upper transparent film 130 is disposed on the upper surface 114 of the quantum dot film 110, and is located between the upper surface 114 and the outer protective film 130.
The outer protective film 140 may be an inorganic coating film, and is fabricated by an atomic layer deposition (atomic layer deposition, ALD) process, and has a thickness of 10-500 nm. The material of the outer protective film 140 may be, but not limited to, alumina (Al 2O 3), silica (SiO 2), and titania (TiO 2), and has good rigidity and gas barrier properties, so the material or arrangement of the outer protective film 140 is not limited as long as the contact between the side surface 116 of the quantum dot thin film layer 110 and the outside air can be isolated.
In addition, as shown in fig. 7, since the outer protective film 140 is coated on the quantum dot film layer 110 and the side 116 through the coating technology, in one embodiment, the upper transparent film layer 130 may be omitted, such that the outer protective film 140 directly covers the upper surface 114 of the quantum dot film layer 110.
Specifically, the lower transparent film 120 and the upper transparent film 130 may be made of pure organic materials, such as PE, and may be made of glue that can be rapidly coated by dispensing and spraying, and have a thickness of 20-200 μm.
In addition, the materials of the lower transparent film layer 120 and the upper transparent film layer 130 may be organic materials, or may be further mixed with nano-sized inorganic powders, such as Al2O3, siO2 or Al2O3, to form a glue material capable of being rapidly coated by dispensing and spraying. Or the lower transparent film 120 and the upper transparent film 130 may be made of inorganic materials and formed on the lower surface 112 and the upper surface 114 by various methods such as plating, deposition, etc.
As shown in fig. 5, based on the optical element 100 with quantum dots, the light emitting device 200 includes a substrate 210, at least a light emitting diode chip 220, and the optical element 100. The number of the light emitting diode chips 220 and the number of the optical elements 100 are matched with each other; that is, each led chip 220 is used with one optical element 100.
As shown in fig. 5, the light emitting diode chip 220 may be, but is not limited to, a blue LED. The light emitting diode chip 220 is disposed on the substrate 210, and the lower transparent film 120 of the optical element 100 faces the light emitting diode chip 220 and is fixed on the light emitting diode chip 220. Therefore, the lower transparent film 120 is covered on the light emitting diode chip 220, so that the light emitting diode chip 220 and the quantum dot thin film layer 110 are separated by the lower transparent film 120. Therefore, when the light emitting diode chip 220 emits light when energized, the high temperature generated by the light emitting diode chip 220 does not directly affect the quantum dot thin film layer 110.
As shown in fig. 5, at the same time, the outer protective film 140 covers the upper transparent film layer 130 and further extends to cover the side 116 of the quantum dot thin film layer 110. That is, for the optical element 100 fixed on the led chip 220, the upper surface 114, the lower surface 112 and the side 116 of the quantum dot film layer 110 are completely covered by the upper transparent film layer 130, the lower transparent film layer 120 and the outer protective film 140. The contact between the quantum dot film layer 110 and the outside air can be effectively isolated, so that degradation of the quantum dot film layer 110 caused by moisture or oxygen in the air is avoided. In addition, in fig. 1, the outer protective film 140 covers only the upper transparent film layer 130 and the side 116 of the quantum dot thin film layer 110. Based on the differences in the coating process, the outer protective film 140 may also further extend to the portion of the surface of the substrate 210 not covered by the optical element 100.
In addition, as shown in fig. 7, the upper transparent film 130 may be omitted, so that the outer protective film 140 directly covers the upper surface 114.
As shown in fig. 1 and 8, the present utility model provides a method for manufacturing a light emitting device 200 with quantum dots. First, a base layer 310 is provided, and the base layer 310 may be a carrier substrate, a transfer tape or a release film, as shown in step S110.
Specifically, the substrate layer 310 is configured to be temporarily or permanently disposed on the optical element 100. For example, when the base layer 310 is a transfer tape or a release film, the optical element 100 is temporarily disposed on the base layer 310, and the optical element 100 or the optical element monomer manufactured later can be peeled off from the base layer 310 to be transferred onto the backlight module substrate 210 (e.g. PCB or glass) or other circuit substrate 210 for performing the die bonding operations such as surface adhesion, soldering, etc. When the base layer 310 is a backlight module substrate 210 or a circuit substrate 210, the led chip 220 is permanently disposed on the base layer 310 through surface adhesion, soldering, or other die bonding operations; the optical element 100 is directly fabricated on the substrate layer 310 and then fixed on the led chip 220.
As shown in fig. 1 and 8, a quantum dot thin film layer 110 is disposed over the substrate layer 310, a lower transparent film layer 120 and an upper transparent film layer 130 are disposed on the lower surface 112 and the upper surface 114 of the quantum dot thin film layer 110, respectively, and the lower transparent film layer 120 is disposed on the substrate layer 310, as shown in step S120.
Specifically, the quantum dot thin film layer 110 has a thickness of 20-200 μm, and may be a glue material such as photo-curing glue mixed nanoparticles, which can be applied by dispensing and spraying, and can be widely applied to the substrate layer 310. The thickness of the lower transparent film 120 is 20-200 μm, and the material can be a photo-curing adhesive or the like which can be coated by dispensing and spraying, and has low heat conductivity. The lower transparent film 120 can form a higher temperature difference between the surface of the light emitting diode chip 220 and the quantum dot film 110, so as to prevent the lower surface 112 of the quantum dot film 110 from directly bearing the high temperature of the light emitting diode chip 220 and slow down the degradation of the quantum dot film 110 caused by heating (degrade). The upper transparent film 130 is disposed on the upper surface 114, and has a thickness of 20-200 μm, and the material can be a glue material such as photo-curing glue that can be applied by dispensing and spraying; the upper transparent film layer 130 provides additional protection to the quantum dot thin film layer 110 and adjusts the optical properties. In addition, the materials of the lower transparent film layer 120 and the upper transparent film layer 130 may be organic materials, or may be further mixed with nano-sized inorganic powders, such as Al2O3, siO2 or Al2O3, to form a glue material capable of being rapidly coated by dispensing and spraying. Or the lower transparent film 120 and the upper transparent film 130 may be made of inorganic materials and formed on the lower surface 112 and the upper surface 114 by various methods such as plating, deposition, etc.
As shown in fig. 2 and 8, the quantum dot thin film layer 110, the lower transparent film layer 120 and the upper transparent film layer 130 are cut to form a plurality of optical element monomers, as shown in step S130. The cutting may be laser cutting or water jet cutting.
As shown in fig. 3 and 8, the optical element monomers are coated with a coating film, and an outer protective film 140 is formed to cover the upper transparent film layer 130 and the side 116 of the quantum dot thin film layer 110 of each optical element monomer, thereby forming a plurality of optical elements 100, as shown in step S140. In addition, as shown in fig. 7, the upper transparent film 130 may be omitted, so that the outer protective film 140 directly covers the upper surface 114.
The base layer 310 peels off the optical elements 100, and transfers the optical elements 100 onto the substrate 210, so as to fix each optical element 100 on the led chip 220 on the substrate 210, as shown in step S150. The optical elements 100 may be disposed on the corresponding led chips 220 through PICK AND PLACE processes (P & P).
Referring to fig. 1, fig. 2, and fig. 9 to fig. 12, an optical device 100 with quantum dots and a light emitting device 200 with the optical device 100 according to a second embodiment of the utility model are disclosed. The optical element 100 has a quantum dot thin film layer 110, a lower transparent film layer 120, an upper transparent film layer 130, and an outer protective film 140.
In the second embodiment, the structure of the light emitting device 200 or the optical element 100 is substantially the same as that of the first embodiment, except that the coverage of the outer protective film 140 is different. In the second embodiment, after the optical element monomer is fixed on the led chip 220 on the substrate 210, the ALD coating process is performed on the entire substrate 210 and the optical element monomer. Therefore, as shown in fig. 11, the outer protective film 140 covers the upper transparent film 130 and the side 116 of the quantum dot film 110, and further covers other parts of the entire substrate 210, so that the exposed surface of the substrate 210, the side edges of the substrate 210 and the bottom surface of the substrate 210 between the optical elements 100 are also covered by the outer protective film 140. The outer protective film 140 is more perfectly coated on the light emitting device 200, and the service life of the light emitting device 200 can be further improved.
The manufacturing method of the light emitting device 200 with quantum dots of the second embodiment also changes based on the distribution change of the outer protective film 140.
As shown in fig. 1 and 12, first, a base layer 310 is provided, and the base layer 310 may be a carrier substrate, a transfer tape or a release film, as shown in step S210.
As shown in fig. 1 and 12, a quantum dot film layer 110 is disposed on the base layer 310, and a lower transparent film layer 120 and an upper transparent film layer 130 are disposed on the lower surface 112 and the upper surface 114 of the quantum dot film layer 110, respectively, as shown in step S220.
Unlike the first embodiment, the upper transparent film layer 130 is located on the substrate layer 310, that is, the lower surface 112 of the quantum dot thin film layer 110 and the lower transparent film layer 120 are located on the side away from the substrate layer 310.
As shown in fig. 9 and 12, next, the quantum dot thin film layer 110, the lower transparent film layer 120 and the upper transparent film layer 130 are cut to form a plurality of optical element monomers, as shown in step S230.
As shown in fig. 10 and 12, the base layer 310 is directly turned over, the optical element monomers are transferred onto the substrate 210 by using the base layer 310, and each optical element monomer is fixed on the led chip 220 on the substrate 210, and the base layer 310 is peeled off, as shown in step S240.
As shown in fig. 11 and 12, the optical element monomers and the substrate 210 are coated with a film, and an outer protective film 140 is formed to cover the side surfaces 116 of the upper transparent film layer 130 and the quantum dot thin film layer 110 of each optical element monomer and extend to other portions of the substrate 210, thereby forming a plurality of optical elements 100 on the substrate 210, as shown in step S250.
According to the light emitting device 200 and the method for manufacturing the same, the quantum dot film layer 110 is completely covered by the outer protective film 140, and the quantum dot film layer 110 has no exposed portion, so that the quantum dot film layer 110 can be effectively isolated from the outside air through the outer protective film 140. Therefore, the light emitting device 200 of the present utility model can effectively slow down the degradation of the material of the quantum dot thin film layer 110, and prolong the lifetime of the light emitting device 200. Meanwhile, the manufacturing method provided by the utility model can also be used for mass production of the light-emitting device 200 to maintain the required productivity.
The foregoing description of the preferred embodiments of the utility model is not intended to limit the scope of the utility model, but rather to cover all modifications and variations in the shape, construction, characteristics and spirit of the utility model as defined in the claims.
Claims (7)
1. An optical element, comprising:
The quantum dot film layer is provided with an upper surface, a lower surface and side surfaces; the side surface connects the upper surface and the lower surface, and the quantum dot film layer is a film containing luminescent semiconductor nano particles;
the lower transparent film layer is arranged on the lower surface of the quantum dot film layer;
And the outer protective film directly or indirectly covers the upper surface of the quantum dot film layer and extends to cover the side surface of the quantum dot film layer.
2. The optical element of claim 1, wherein the outer protective film is a coating film of an inorganic material.
3. The optical element of claim 1, wherein the thickness of the outer protective film is between 10 and 500 nm.
4. The optical element of claim 1, further comprising an upper transparent film layer disposed on the upper surface of the quantum dot film layer between the upper surface and the outer protective film.
5. The optical element of claim 4, wherein the thickness of the lower transparent film layer and the upper transparent film layer is between 20 and 200 μm.
6. A light emitting device having quantum dots, comprising:
A substrate;
the light-emitting diode chip is arranged on the substrate; and
The optical element of any one of claims 1 to 5, wherein the optical element is fixed on the light emitting diode chip with the lower transparent film layer facing the light emitting diode chip.
7. The light-emitting device according to claim 6, wherein the outer protective film extends to a portion of the substrate not covered by the optical element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321903139.8U CN220856603U (en) | 2023-07-19 | 2023-07-19 | Optical element and light-emitting device with quantum dots |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202321903139.8U CN220856603U (en) | 2023-07-19 | 2023-07-19 | Optical element and light-emitting device with quantum dots |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN220856603U true CN220856603U (en) | 2024-04-26 |
Family
ID=90746562
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202321903139.8U Active CN220856603U (en) | 2023-07-19 | 2023-07-19 | Optical element and light-emitting device with quantum dots |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN220856603U (en) |
-
2023
- 2023-07-19 CN CN202321903139.8U patent/CN220856603U/en active Active
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