TWM646905U - Vacuum baking structure with buffer processing - Google Patents

Vacuum baking structure with buffer processing Download PDF

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TWM646905U
TWM646905U TW112206773U TW112206773U TWM646905U TW M646905 U TWM646905 U TW M646905U TW 112206773 U TW112206773 U TW 112206773U TW 112206773 U TW112206773 U TW 112206773U TW M646905 U TWM646905 U TW M646905U
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Taiwan
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buffer
baking
cavity
vacuum
substrates
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TW112206773U
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Chinese (zh)
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李原吉
劉品均
蔡明展
林岱蔚
鄭耿旻
邱敬凱
楊正暐
曾進男
林栩
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友威科技股份有限公司
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Priority to TW112206773U priority Critical patent/TWM646905U/en
Publication of TWM646905U publication Critical patent/TWM646905U/en

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Abstract

本申請為一種具緩衝處理的真空烘烤機構,其包含有:一基材轉運站、一第一緩衝腔體及一真空烘烤腔體。基材轉運站包含有一轉運傳輸模組,用以取放該些基材;第一緩衝腔體包含有一第一緩衝閘門、複數第一傳輸模組及一第一烘烤進出口,用以各別接收或輸出各基材進出第一緩衝閘門或第一烘烤進出口;真空烘烤腔體包含有一與第一烘烤進出口連接的第一烘烤閘門、一烘烤模組,以對該些基材進行真空烘烤。藉此,提高真空烘烤腔體的烘烤效率及基材的製程良率。This application is a vacuum baking mechanism with buffer processing, which includes: a substrate transfer station, a first buffer cavity and a vacuum baking cavity. The substrate transfer station includes a transfer transmission module for picking up and placing the substrates; the first buffer cavity includes a first buffer gate, a plurality of first transmission modules and a first baking inlet and outlet for each Respectively receive or output each substrate into and out of the first buffer gate or the first baking inlet and outlet; the vacuum baking cavity includes a first baking gate connected to the first baking inlet and outlet, and a baking module to The substrates are vacuum baked. This improves the baking efficiency of the vacuum baking cavity and the process yield of the substrate.

Description

具緩衝處理的真空烘烤機構Buffered vacuum baking mechanism

本申請係有關於一種真空烘烤機構,特別是指一種具緩衝處理的真空烘烤機構。This application relates to a vacuum baking mechanism, in particular to a vacuum baking mechanism with buffering.

於現今的半導體製程設備中,半導體設備會在不同腔體間運送基板,以對基板進行蝕刻、鍍膜、清潔、冷卻等腔體作不同的處理。然而,在基板等待進入腔體前,基板可能會因大氣環境下與空氣接觸而使空氣中的水分吸附於基板表面,進而影響基板後續製程的良率。In today's semiconductor process equipment, the semiconductor equipment will transport the substrate between different cavities to perform different processing on the substrate such as etching, coating, cleaning, cooling, etc. However, before the substrate waits to enter the cavity, the substrate may be in contact with the air in the atmospheric environment, causing moisture in the air to be adsorbed on the surface of the substrate, thereby affecting the yield of the substrate in subsequent processes.

為了解決水氣或殘留物形成於基板上而造成後續製程良率上的影響,一般會使用真空烤箱對基板進行真空烘烤後,才會運送至後續製程機台。真空烘烤的作法為將複數基板置入真空烤箱內部後,關閉閘門並抽去真空烤箱內的空氣,接著在進行加熱烘烤,以去除基板上的水氣或者殘留物。待烘烤完成,閘門開啟並取出基板運送至後續製程機台進行製程作業。然而,這樣的作法會有幾個問題:In order to solve the problem of moisture or residue forming on the substrate that would affect the subsequent process yield, a vacuum oven is generally used to vacuum bake the substrate before transporting it to the subsequent process machine. The method of vacuum baking is to place multiple substrates into the vacuum oven, close the gate and remove the air from the vacuum oven, and then perform heating and baking to remove moisture or residue on the substrates. After the baking is completed, the gate is opened and the substrate is taken out and transported to the subsequent processing machine for processing operations. However, there are several problems with this approach:

一、使真空烤箱達到真空狀態所需要的抽氣時間長,又必須在取出基板時要進行破真空處理,每一批次的基板進出都會重新這個循環,耗費時間甚鉅,這將大幅降低真空烤箱的使用效率。1. The pumping time required to reach the vacuum state of the vacuum oven is long, and the vacuum must be broken when taking out the substrates. The cycle will be repeated for each batch of substrates, which is very time-consuming and will significantly reduce the vacuum. Oven usage efficiency.

二、每一批次的基板進出都將需要重複的進行升溫及降溫的程序,升溫及降溫程序亦會耗費相當時間,影響真空烤箱的使用效率。2. Each batch of substrates will require repeated heating and cooling procedures. The heating and cooling procedures will also take a considerable amount of time and affect the efficiency of the vacuum oven.

三、由於後續製程會需要逐一對基板進行製程加工,完成真空烘烤後的複數基板將有可能於等待後續製程的時間內,使得水氣重新附著於基板上,減損了真空烘烤的效果。3. Since the subsequent processes will require processing of the substrates one by one, the plurality of substrates after vacuum baking may have water vapor re-attached to the substrates while waiting for the subsequent processes, which will impair the effect of vacuum baking.

由上述說明可知,習知真空烤箱的作法不論在效率上、烘烤效果上都不盡理想。因此,如何解決前述問題成為業者之一大課題。From the above description, it can be seen that the conventional vacuum oven method is not ideal in terms of efficiency and baking effect. Therefore, how to solve the aforementioned problems has become a major issue for the industry.

本申請之主要目的,在於改善過去的真空烤箱烘烤效率低及無法解決水氣重新附著之問題。The main purpose of this application is to improve the low baking efficiency of past vacuum ovens and the inability to solve the problem of moisture re-adhesion.

前述目的並不妨礙其他目的之存在。若所屬技術領域之具有通常知識者自說明書、申請專利範圍或圖式等之記載可以導出之目的者,亦包含在本申請目的中。因此,本申請的目的不侷限於前述列舉之目的。The aforementioned purposes do not prevent the existence of other purposes. If a person with ordinary knowledge in the technical field can derive the purpose from the description, patent scope, drawings, etc., it is also included in the purpose of this application. Therefore, the purpose of this application is not limited to the foregoing enumerated purposes.

為達成上述目的,本申請提供一種具緩衝處理的真空烘烤機構,其與一製程機構連接,以對複數基材進行烘烤,真空烘烤機構包含有:一基材轉運站、一第一緩衝腔體及一真空烘烤腔體。基材轉運站與製程機構相鄰,基材轉運站包含有一轉運傳輸模組,轉運傳輸模組用以取放該些基材;第一緩衝腔體相鄰於基材轉運站,第一緩衝腔體包含有一第一緩衝閘門、複數垂直方向間隔疊置的第一傳輸模組以及一第一烘烤進出口,第一緩衝閘門係相鄰於基材轉運站,該些基材係經由第一緩衝閘門進出第一緩衝腔體,該些第一傳輸模組係設置於第一緩衝閘門與第一烘烤進出口之間,用以各別接收或輸出各基材進出第一緩衝閘門或第一烘烤進出口,而第一抽真空模組於第一緩衝閘門關上時進行抽真空;真空烘烤腔體連接第一緩衝腔體,真空烘烤腔體包含有一與第一烘烤進出口連接的第一烘烤閘門及一烘烤模組,第一烘烤閘門控制真空烘烤腔體與第一緩衝腔體之間的連通,烘烤模組對該些基材進行真空烘烤。In order to achieve the above purpose, the present application provides a vacuum baking mechanism with buffer processing, which is connected to a process mechanism to bake multiple substrates. The vacuum baking mechanism includes: a substrate transfer station, a first Buffer cavity and a vacuum baking cavity. The substrate transfer station is adjacent to the process mechanism. The substrate transfer station includes a transfer transmission module, which is used to pick up and place the substrates; the first buffer cavity is adjacent to the substrate transfer station, and the first buffer cavity The cavity includes a first buffer gate, a plurality of first transmission modules stacked at intervals in the vertical direction, and a first baking inlet and outlet. The first buffer gate is adjacent to the substrate transfer station, and the substrates pass through the first A buffer gate enters and exits the first buffer cavity, and the first transmission modules are disposed between the first buffer gate and the first baking inlet and outlet to respectively receive or output each substrate into and out of the first buffer gate or There is a first baking inlet and outlet, and the first vacuum module performs vacuuming when the first buffer gate is closed; the vacuum baking cavity is connected to the first buffer cavity, and the vacuum baking cavity includes a first baking inlet and a first baking inlet. The first baking gate and a baking module are connected to the outlet. The first baking gate controls the communication between the vacuum baking cavity and the first buffer cavity. The baking module performs vacuum baking on the substrates. .

於本申請另一實施例中,本申請提供一種具緩衝處理的真空烘烤方法,用以對複數基材進行烘烤,真空烘烤方法包含以下步驟:步驟S1、步驟S2、步驟S3。於步驟S1中:第一緩衝閘門開啟,利用轉運傳輸模組將輸入的該些基材放入第一緩衝腔體,用以將該些基材分別放入於該些第一傳輸模組上,當第一緩衝閘門關上時第一抽真空模組對第一緩衝腔體進行抽真空;於步驟S2中:第一烘烤閘門開啟,利用該些第一傳輸模組將該些基材放入於烘烤模組,而第一烘烤閘門關上,以對該些基材進行真空烘烤;於步驟S3中:第一烘烤閘門再次開啟,藉由該些第一傳輸模組從真空烘烤腔體中取出已完成烘烤的該些基材放置於第一緩衝腔體。In another embodiment of the present application, the present application provides a vacuum baking method with buffer processing for baking multiple substrates. The vacuum baking method includes the following steps: step S1, step S2, and step S3. In step S1: the first buffer gate is opened, and the input substrates are put into the first buffer cavity using the transfer transmission module to place the substrates on the first transmission modules respectively. , when the first buffer gate is closed, the first vacuum module evacuates the first buffer cavity; in step S2: the first baking gate is opened, and the first transfer modules are used to place the substrates into the baking module, and the first baking gate is closed to vacuum bake the substrates; in step S3: the first baking gate is opened again, and the first transmission modules are used to vacuum bake the base materials. The substrates that have been baked are taken out of the baking cavity and placed in the first buffer cavity.

依據上述技術特徵,本申請包含有以下特點:Based on the above technical characteristics, this application contains the following features:

一、藉由第一緩衝腔體作為真空烘烤腔體的緩衝處理,避免真空烘烤腔體需直接與大氣環境接觸,而使得真空烘烤腔體進行下一批次基材烘烤之前又需要重新抽真空之問題,大幅度的降低真空烘烤腔體進行真空烘烤所需的準備時間,提高烘烤的效率。1. By using the first buffer cavity as a buffer for the vacuum baking cavity, it is avoided that the vacuum baking cavity needs to be in direct contact with the atmospheric environment, so that the vacuum baking cavity can be heated again before baking the next batch of substrates. The problem of needing to re-vacuum can be greatly reduced, and the preparation time required for vacuum baking in the vacuum baking cavity can be greatly reduced and the baking efficiency can be improved.

二、第一緩衝腔體可作為該些基材烘烤後的降溫等待區,避免真空烘烤腔體進行大幅度降溫,而又需要在下一批次基材烘烤時,重新進行升溫作業,藉以減少真空烘烤腔體升降溫作業所需的準備時間。2. The first buffer cavity can be used as a waiting area for cooling after the substrates are baked, to prevent the vacuum baking cavity from being significantly cooled and requiring the heating operation to be restarted when the next batch of substrates is baked. This reduces the preparation time required for heating and cooling of the vacuum baking cavity.

三、藉由第一緩衝腔體的設置,避免該些基材從真空烘烤腔體取出後,該些基材需直接暴露於大氣環境中等待後續製程的情形。如此一來,可降低該些基材暴露於大氣環境中的等待時間,進而減少該些基材重新被水氣吸附的情形,藉以提高製程的良率與品質。3. Through the arrangement of the first buffer cavity, it is avoided that after the substrates are taken out from the vacuum baking cavity, the substrates need to be directly exposed to the atmospheric environment to wait for subsequent processes. In this way, the waiting time for the substrates to be exposed to the atmospheric environment can be reduced, thereby reducing the re-adsorption of water vapor on the substrates, thereby improving the yield and quality of the process.

為便於說明本申請於上述新型內容一欄中所表示的中心思想,茲以具體實施例表達。實施例中各種不同物件係按適於說明之比例、尺寸、變形量或位移量而描繪,而非按實際元件的比例予以繪製,合先敘明。In order to facilitate the explanation of the central idea expressed in the above novel content column of the present application, specific embodiments are hereby expressed. Various objects in the embodiments are drawn according to proportions, sizes, deformations or displacements suitable for illustration, rather than according to the proportions of actual components, and are explained first.

以下參照各附圖詳細描述本申請的示例性實施例,且不意圖將本申請的技術原理限制於特定公開的實施例,而本申請的範圍僅由申請專利範圍限制,涵蓋了替代、修改和等同物。Exemplary embodiments of the present application are described in detail below with reference to the accompanying drawings. It is not intended to limit the technical principles of the present application to the specific disclosed embodiments, but the scope of the present application is limited only by the patent scope of the application, covering substitutions, modifications and equivalent.

請參閱圖1至圖2所示,於本實施例中,本申請提供一種具緩衝處理的真空烘烤機構100A,其與一製程機構1連接,以對複數基材2進行烘烤,真空烘烤機構100A包含有:一基材轉運站10、一第一緩衝腔體20及一真空烘烤腔體30。前述製程機構1用以鍍膜、蝕刻、清潔,而具有複數個相連通的機構、腔體或站點連接而成。而製程機構1於本實施例中為連續式製程設備,可以包含有一載入站3、複數個以串接組合的製程腔體4以及載出站6,該些基材2得以前述站點或腔體完成鍍膜、蝕刻、清潔的製程,但本申請並不必須以連接連續式製程設備為限。於本申請實施例中,基材2可為晶圓、晶片、電路載板(例如:PCB)等物件。Please refer to Figures 1 to 2. In this embodiment, the application provides a vacuum baking mechanism 100A with buffer processing, which is connected to a process mechanism 1 to bake a plurality of substrates 2. The vacuum baking mechanism The baking mechanism 100A includes: a substrate transfer station 10 , a first buffer cavity 20 and a vacuum baking cavity 30 . The aforementioned process mechanism 1 is used for coating, etching, and cleaning, and is composed of a plurality of connected mechanisms, cavities, or stations. In this embodiment, the process mechanism 1 is a continuous process equipment, which may include a loading station 3, a plurality of process chambers 4 combined in series, and a loading station 6. The substrates 2 can be processed by the aforementioned stations or The cavity completes the processes of coating, etching, and cleaning, but this application is not necessarily limited to connecting to continuous process equipment. In the embodiment of the present application, the substrate 2 can be a wafer, a chip, a circuit carrier board (eg, PCB), or other objects.

於真空烘烤機構100A的實施例中,基材轉運站10與製程機構1相鄰,此處所謂的相鄰,亦即相較本申請其他模組來說,是基材轉運站10較為鄰近而實際上與製程機構1進行取放作業,並非指物理位置上較為鄰近的關係。基材轉運站10包含有一轉運傳輸模組11以及一垂直升降模組12。轉運傳輸模組11與垂直升降模組12連接,轉運傳輸模組11位於製程機構1與第一緩衝腔體20之間以取出或放入該些基材2,垂直升降模組12則控制轉運傳輸模組11於基材轉運站10進行垂直方向的移動,將該些基材2分配至第一緩衝腔體20中。In the embodiment of the vacuum baking mechanism 100A, the substrate transfer station 10 is adjacent to the process mechanism 1. The so-called adjacent here means that compared to other modules of this application, the substrate transfer station 10 is relatively close. In fact, the pick-and-place operation with the process mechanism 1 does not refer to a relatively close relationship in terms of physical location. The substrate transfer station 10 includes a transfer and transmission module 11 and a vertical lifting module 12 . The transfer and transmission module 11 is connected to the vertical lifting module 12. The transfer and transmission module 11 is located between the process mechanism 1 and the first buffer cavity 20 to take out or put the substrates 2. The vertical lifting module 12 controls the transfer. The transfer module 11 moves vertically in the substrate transfer station 10 to distribute the substrates 2 into the first buffer cavity 20 .

於本申請一實施例中,轉運傳輸模組11包含有複數在該些基材2兩側傳輸的傳輸滾輪,以傳輸該些基材2。於本申請一實施例中,垂直升降模組12的動力源可以是伺服馬達、步進馬達、氣壓缸、液壓缸等,本申請不以此為限。於本申請另一實施例中,轉運傳輸模組11也可以為一機械手臂(例如六軸機械手臂),在製程機構1與第一緩衝腔體20之間取出或放入該些基材2。In one embodiment of the present application, the transfer and transport module 11 includes a plurality of transport rollers that transport the substrates 2 on both sides to transport the substrates 2 . In an embodiment of the present application, the power source of the vertical lifting module 12 may be a servo motor, a stepper motor, a pneumatic cylinder, a hydraulic cylinder, etc., but the present application is not limited thereto. In another embodiment of the present application, the transfer and transmission module 11 can also be a robotic arm (such as a six-axis robotic arm), which takes out or puts the substrates 2 between the process mechanism 1 and the first buffer cavity 20 .

第一緩衝腔體20相鄰於基材轉運站10,亦即基材轉運站10位於製程機構1與第一緩衝腔體20之間,第一緩衝腔體20可接收來自基材轉運站10的該些基材2。第一緩衝腔體20包含有一第一緩衝閘門21、複數垂直方向間隔疊置的第一傳輸模組22、一第一烘烤進出口23以及一第一抽真空模組24。The first buffer cavity 20 is adjacent to the substrate transfer station 10 , that is, the substrate transfer station 10 is located between the process mechanism 1 and the first buffer cavity 20 . The first buffer cavity 20 can receive data from the substrate transfer station 10 of these substrates 2. The first buffer cavity 20 includes a first buffer gate 21, a plurality of vertically spaced and stacked first transmission modules 22, a first baking inlet and outlet 23, and a first vacuum module 24.

接續說明,第一緩衝閘門21係相鄰於基材轉運站10,藉由第一緩衝閘門21控制基材轉運站10與第一緩衝腔體20之間的連通,該些基材2係可經由第一緩衝閘門21進出第一緩衝腔體20。於本申請之實施例中,第一緩衝閘門21是以樞擺啟閉,使該些基材2進出第一緩衝腔體20。除此之外,第一緩衝閘門21也可以是向兩側滑移、上下位移的方式進行開啟,讓該些基材2能通過第一緩衝閘門21,故本案並不僅以樞擺啟閉第一緩衝閘門21為限。Continuing to explain, the first buffer gate 21 is adjacent to the substrate transfer station 10. The first buffer gate 21 controls the communication between the substrate transfer station 10 and the first buffer cavity 20. The substrates 2 can be Access to the first buffer cavity 20 is via the first buffer gate 21 . In the embodiment of the present application, the first buffer gate 21 is opened and closed by pivoting to allow the substrates 2 to enter and exit the first buffer cavity 20 . In addition, the first buffer gate 21 can also be opened by sliding to both sides and displacing up and down, so that the substrates 2 can pass through the first buffer gate 21. Therefore, this case does not only open and close the first buffer gate 21 by pivoting. A buffer gate is limited to 21.

第一烘烤進出口23相鄰於真空烘烤腔體30,該些第一傳輸模組22係設置於第一緩衝閘門21與第一烘烤進出口23之間,用以各別接收或輸出各基材2進出第一緩衝閘門21或第一烘烤進出口23。亦即該些基材2可於基材轉運站10、第一緩衝腔體20及真空烘烤腔體30間作移動。於本申請一實施例中,該些第一傳輸模組22包含有複數傳輸滾輪,以傳輸該些基材2,本申請不以此為限。該些基材2在第一緩衝腔體20內時,第一緩衝閘門21關上並以第一抽真空模組24進行抽真空,使第一緩衝腔體20呈真空狀態,以防止該些基材2接觸空氣。於本申請一較佳實施例中,第一緩衝腔體20內之壓力值可為1x10 -1托(Torr)至1x10 -3托之間。 The first baking inlet and outlet 23 is adjacent to the vacuum baking cavity 30. The first transmission modules 22 are disposed between the first buffer gate 21 and the first baking inlet and outlet 23 for respectively receiving or Each substrate 2 is output into and out of the first buffer gate 21 or the first baking inlet and outlet 23 . That is to say, the substrates 2 can move between the substrate transfer station 10 , the first buffer cavity 20 and the vacuum baking cavity 30 . In one embodiment of the present application, the first transport modules 22 include a plurality of transport rollers to transport the substrates 2 , but the present application is not limited thereto. When the substrates 2 are in the first buffer cavity 20, the first buffer gate 21 is closed and the first vacuum module 24 is used to evacuate, so that the first buffer cavity 20 is in a vacuum state to prevent the substrates from being Material 2 is exposed to air. In a preferred embodiment of the present application, the pressure value in the first buffer chamber 20 may be between 1x10 -1 Torr and 1x10 -3 Torr.

於本申請一實施例中,第一緩衝閘門21可以為複數個,該些第一緩衝閘門21分別對應該些第一傳輸模組22位置作設置,以分別輸入、輸出該些基材2。這樣的好處在於,第一緩衝腔體20可以獨立啟閉該些第一緩衝閘門21而取放該些基材2的其中之一,當其中一個第一緩衝閘門21開啟時,也不會讓過多的空氣進入第一緩衝腔體20,使第一緩衝腔體20較容易維持隔絕的狀態,藉以減少該些基材2與外部空氣的接觸。In an embodiment of the present application, there may be a plurality of first buffer gates 21 , and the first buffer gates 21 are respectively set corresponding to the positions of the first transmission modules 22 to input and output the substrates 2 respectively. The advantage of this is that the first buffer cavity 20 can independently open and close the first buffer gates 21 to access one of the substrates 2 , and when one of the first buffer gates 21 is opened, it will not allow Excessive air enters the first buffer cavity 20, making it easier for the first buffer cavity 20 to maintain an isolated state, thereby reducing the contact between the substrates 2 and external air.

真空烘烤腔體30連接第一緩衝腔體20以接收來自第一緩衝腔體20的該些基材2或輸出該些基材2至第一緩衝腔體20。真空烘烤腔體30包含有一與第一烘烤進出口23連接的第一烘烤閘門31、一烘烤模組32及一第二抽真空模組33。第一烘烤閘門31控制真空烘烤腔體30與第一緩衝腔體20之間的連通,供該些第一傳輸模組22傳輸該些基材2至真空烘烤腔體30,使烘烤模組32可對該些基材2進行烘烤,於本申請之一實施例中,烘烤模組32具有複數個,且分別對應該些第一傳輸模組22間隔疊置位置設置,而可各別獨立的對單一基材2進行烘烤。進一步的,可使用熱輻射的方式對該些基材2進行烘烤。The vacuum baking cavity 30 is connected to the first buffer cavity 20 to receive the substrates 2 from the first buffer cavity 20 or to output the substrates 2 to the first buffer cavity 20 . The vacuum baking cavity 30 includes a first baking gate 31 connected to the first baking inlet and outlet 23 , a baking module 32 and a second vacuum module 33 . The first baking gate 31 controls the communication between the vacuum baking cavity 30 and the first buffer cavity 20 for the first transmission modules 22 to transport the substrates 2 to the vacuum baking cavity 30 for drying. The baking module 32 can bake the substrates 2. In one embodiment of the present application, there are a plurality of baking modules 32, and they are respectively arranged in stacked positions corresponding to the first transmission modules 22. A single substrate 2 can be baked independently. Furthermore, the substrates 2 can be baked using thermal radiation.

於本申請一實施例中,真空烘烤腔體30更包含一第二抽真空模組33,第二抽真空模組33用以對真空烘烤腔體30內進行抽真空,使真空烘烤腔體30處於真空狀態並對該些基材2進行真空烘烤。於本申請一較佳實施例中,真空烘烤腔體30內之壓力值可介於1x10 -2托(Torr)至1x10 -8托之間,其中真空烘烤腔體30的真空度必須大於第一緩衝腔體20。 In one embodiment of the present application, the vacuum baking cavity 30 further includes a second vacuum module 33. The second vacuum module 33 is used to evacuate the inside of the vacuum baking cavity 30 to achieve vacuum baking. The cavity 30 is in a vacuum state and vacuum bakes the substrates 2 . In a preferred embodiment of the present application, the pressure value in the vacuum baking cavity 30 can be between 1x10 -2 Torr and 1x10 -8 Torr, where the vacuum degree of the vacuum baking cavity 30 must be greater than The first buffer cavity 20.

例示一個實際工作情形,基材轉運站10依序將該些基材2分別輸入於第一緩衝腔體20中後,關閉第一緩衝閘門21,由第一抽真空模組24進行第一緩衝腔體20的低度抽真空作業。接著,開啟第一烘烤閘門31,並且由第一傳輸模組22將基材2一次性的全部輸入至真空烘烤腔體30中,再關上第一烘烤閘門31,以第二抽真空模組33進行抽真空及烘烤模組32進行烘烤,進而達到真空烘烤該些基材2之目的。需說明的是,由於真空烘烤腔體30本身已位於真空狀態,雖然,第一烘烤閘門31的開啟會使得真空烘烤腔體30與第一緩衝腔體20連通,而降低真空烘烤腔體30的真空度。然而,在該些基材2全部輸入至真空烘烤腔體30並關閉第一烘烤閘門31後,僅需要透過第二抽真空模組33加強性的進行抽真空作業,即可將真空烘烤腔體30的真空度提升至較高真空度的狀態。而待該些基材2全部真空烘烤完畢後,便可開啟第一烘烤閘門31,並由第一傳輸模組22一次全部接收真空烘烤腔體30中的基材2,亦即第一緩衝腔體20完成基材2的接收。最後,將該些基材2從第一緩衝腔體20逐一放置於基材轉運站10,供基材轉運站10進行後續輸出基材2的作業。To illustrate an actual working situation, the substrate transfer station 10 sequentially inputs the substrates 2 into the first buffer chamber 20, then closes the first buffer gate 21, and the first vacuum module 24 performs the first buffering process. Low-level vacuuming of the chamber 20. Then, the first baking gate 31 is opened, and the first transfer module 22 inputs all the substrates 2 into the vacuum baking cavity 30 at one time, and then the first baking gate 31 is closed, and the second vacuuming step is performed. The module 33 performs vacuuming and the baking module 32 performs baking, thereby achieving the purpose of vacuum baking the substrates 2 . It should be noted that since the vacuum baking cavity 30 itself is already in a vacuum state, opening the first baking gate 31 will cause the vacuum baking cavity 30 to communicate with the first buffer cavity 20, thereby reducing the vacuum baking time. The vacuum degree of the cavity 30. However, after all the substrates 2 are input into the vacuum baking cavity 30 and the first baking gate 31 is closed, it is only necessary to perform an intensive vacuuming operation through the second vacuuming module 33 to complete the vacuum baking process. The vacuum degree of the baking cavity 30 is increased to a higher vacuum degree state. After all the substrates 2 are vacuum baked, the first baking gate 31 can be opened, and the first transmission module 22 can receive all the substrates 2 in the vacuum baking cavity 30 at once, that is, the first baking gate 31 can be opened. A buffer cavity 20 completes the reception of the substrate 2 . Finally, the substrates 2 are placed one by one from the first buffer chamber 20 to the substrate transfer station 10 for the substrate transfer station 10 to perform subsequent operations of outputting the substrates 2 .

於本申請一實施例中,第一緩衝腔體20更可包含有一第一冷卻模組25,第一冷卻模組25設於第一傳輸模組22相鄰基材2之一側,以對完成烘烤的該些基材2進行冷卻,藉以縮短該些基材2之冷卻緩衝時間。於本申請實施例中,第一冷卻模組25可採用接觸式冷卻或非接觸式冷卻,例如:氣冷、風冷、水冷及冷卻板等冷卻方式。In an embodiment of the present application, the first buffer cavity 20 may further include a first cooling module 25. The first cooling module 25 is disposed on one side of the first transmission module 22 adjacent to the base material 2, so as to The substrates 2 that have been baked are cooled, thereby shortening the cooling buffer time of the substrates 2 . In the embodiment of the present application, the first cooling module 25 can adopt contact cooling or non-contact cooling, such as air cooling, air cooling, water cooling, cooling plate and other cooling methods.

於本申請一實施例中,第一緩衝腔體20可包含有一第一氮氣模組26,第一氮氣模組26 可設置於第一緩衝閘門21與第一烘烤進出口23之間,用以對該些基材2進行噴氣。舉例來說,當該些基材2欲由第一緩衝閘門21輸出時,可藉由第一氮氣模組26以低溫氮氣對該些基材2噴氣,以形成保護膜於基材2的表面上,延緩或降低基材2離開第一緩衝腔體20後,基材2被大氣中的水氣再次附著的時間或機率。除此之外,第一氮氣模組26還能對已完成烘烤的該些基材2進行冷卻,以縮短該些基材2的冷卻時間。In an embodiment of the present application, the first buffer cavity 20 may include a first nitrogen module 26, and the first nitrogen module 26 may be disposed between the first buffer gate 21 and the first baking inlet and outlet 23. These substrates 2 are air-jetted. For example, when the substrates 2 are to be output from the first buffer gate 21 , the first nitrogen module 26 can be used to blow the substrates 2 with low-temperature nitrogen to form a protective film on the surface of the substrates 2 to delay or reduce the time or probability for the substrate 2 to be reattached by moisture in the atmosphere after the substrate 2 leaves the first buffer cavity 20 . In addition, the first nitrogen module 26 can also cool the substrates 2 that have been baked, so as to shorten the cooling time of the substrates 2 .

請參閱圖3至圖5所示,於真空烘烤機構100B的實施例中,與真空烘烤機構100A實施例的不同之處在於真空烘烤機構100B更包含一第二緩衝腔體40。而真空烘烤機構100B能與一輸送機構5連接,所述輸送機構5於本實施例中相鄰於兩製程機構1的載入站3,並位於兩載入站3之間,輸送機構5於兩載入站3與真空烘烤機構100B間傳輸基材2。於本實施例中,基材轉運站10、第一緩衝腔體20、第二緩衝腔體40及真空烘烤腔體30為方形,第一緩衝腔體20與第二緩衝腔體40分別設於基材轉運站10相鄰接的兩側面,並且第一緩衝腔體20與第二緩衝腔體40亦分別連接於真空烘烤腔體30相鄰接的兩側面,以使基材轉運站10、第一緩衝腔體20、第二緩衝腔體40及真空烘烤腔體30呈田字形組合。藉此,第一緩衝腔體20或第二緩衝腔體40在取放該些基材2時,另一緩衝腔體可以進行基材2的冷卻緩衝或烘烤。抑或是一緩衝腔體在等待取出烘烤中的該些基材2,另一緩衝腔體可以從基材轉運站10輸入基材2。以兩個緩衝腔體於不同時間點輸入、輸出該些基材2,以減少真空烘烤腔體30的閒置時間,提升整體的運作效率。Please refer to FIGS. 3 to 5 . In the embodiment of the vacuum baking mechanism 100B, the difference from the embodiment of the vacuum baking mechanism 100A is that the vacuum baking mechanism 100B further includes a second buffer cavity 40 . The vacuum baking mechanism 100B can be connected to a conveying mechanism 5. In this embodiment, the conveying mechanism 5 is adjacent to the loading stations 3 of the two process mechanisms 1 and is located between the two loading stations 3. The conveying mechanism 5 The substrate 2 is transported between the two loading stations 3 and the vacuum baking mechanism 100B. In this embodiment, the substrate transfer station 10, the first buffer cavity 20, the second buffer cavity 40 and the vacuum baking cavity 30 are square, and the first buffer cavity 20 and the second buffer cavity 40 are respectively provided with on two adjacent sides of the substrate transfer station 10, and the first buffer cavity 20 and the second buffer cavity 40 are also respectively connected to two adjacent sides of the vacuum baking cavity 30, so that the substrate transfer station 10. The first buffer cavity 20, the second buffer cavity 40 and the vacuum baking cavity 30 are combined in a field shape. Thereby, when the first buffer cavity 20 or the second buffer cavity 40 picks up and places the substrates 2, the other buffer cavity can cool, buffer or bake the substrates 2. Or one buffer cavity is waiting to take out the substrates 2 being baked, and another buffer cavity can input the substrates 2 from the substrate transfer station 10 . Two buffer cavities are used to input and output the substrates 2 at different time points to reduce the idle time of the vacuum baking cavity 30 and improve the overall operating efficiency.

於本申請一實施例中,請配合參閱圖4及圖5所示,圖4及圖5分別為第二緩衝腔體40右、後側剖面示意圖,第二緩衝腔體40相鄰於基材轉運站10(如圖4所示),並且第二緩衝腔體40與真空烘烤腔體30連接(如圖5所示),第二緩衝腔體40可接收來自基材轉運站10的該些基材2。第二緩衝腔體40包含有一第二緩衝閘門41、複數垂直方向間隔疊置的第二傳輸模組42、一第二烘烤進出口43以及一第三抽真空模組44。In one embodiment of the present application, please refer to Figures 4 and 5. Figures 4 and 5 are respectively schematic cross-sectional views of the right and rear sides of the second buffer cavity 40. The second buffer cavity 40 is adjacent to the base material. Transfer station 10 (as shown in Figure 4), and the second buffer cavity 40 is connected to the vacuum baking cavity 30 (as shown in Figure 5), and the second buffer cavity 40 can receive the material from the substrate transfer station 10. Some substrates 2. The second buffer cavity 40 includes a second buffer gate 41, a plurality of vertically spaced and stacked second transmission modules 42, a second baking inlet and outlet 43, and a third vacuum module 44.

第二緩衝閘門41係相鄰於基材轉運站10,藉由第二緩衝閘門41控制基材轉運站10與第二緩衝腔體40之間的連通,該些基材2係經由第二緩衝閘門41進出第二緩衝腔體40。該些第二傳輸模組42對應該些基材2進出位置作設置,用以各別接收或輸出各基材2進出第二緩衝閘門41或第二烘烤進出口43。於本申請一實施例中,該些第二傳輸模組42包含有複數傳輸滾輪,以傳輸該些基材2,本申請不以此為限。而第二緩衝閘門41、第二傳輸模組42、第二烘烤進出口43、第三抽真空模組44與第一緩衝閘門21、第一傳輸模組22、第一烘烤進出口23、第一抽真空模組24的功能相同。The second buffer gate 41 is adjacent to the substrate transfer station 10. The second buffer gate 41 controls the communication between the substrate transfer station 10 and the second buffer cavity 40. The substrates 2 pass through the second buffer The gate 41 enters and exits the second buffer cavity 40 . The second transmission modules 42 are arranged corresponding to the entrance and exit positions of the substrates 2 , and are used to respectively receive or output each substrate 2 into and out of the second buffer gate 41 or the second baking inlet and outlet 43 . In one embodiment of the present application, the second transport modules 42 include a plurality of transport rollers to transport the substrates 2 , but the present application is not limited thereto. The second buffer gate 41, the second transmission module 42, the second baking inlet and outlet 43, the third vacuum module 44 and the first buffer gate 21, the first transmission module 22, the first baking inlet and outlet 23 , the functions of the first vacuum module 24 are the same.

於本申請一實施例中,真空烘烤腔體30更包含有一與第二烘烤進出口43連接的第二烘烤閘門34,第二烘烤閘門34控制真空烘烤腔體30與第二緩衝腔體40之間的連通,供該些第二傳輸模組42傳輸該些基材2至真空烘烤腔體30,使烘烤模組32可對該些基材2進行真空烘烤。In one embodiment of the present application, the vacuum baking cavity 30 further includes a second baking gate 34 connected to the second baking inlet and outlet 43. The second baking gate 34 controls the vacuum baking cavity 30 and the second baking gate 34. The communication between the buffer cavities 40 allows the second transmission modules 42 to transport the substrates 2 to the vacuum baking cavity 30 so that the baking modules 32 can vacuum bake the substrates 2 .

於本申請一實施例中,第二緩衝腔體40更包含有一第二冷卻模組45,第二冷卻模組45設於第二傳輸模組42相鄰基材2之一側,以對完成烘烤的該些基材2進行冷卻。於本申請實施例中,第二冷卻模組45可採用接觸式冷卻或非接觸式冷卻,例如:氣冷、風冷、水冷及冷卻板等冷卻方式。In one embodiment of the present application, the second buffer cavity 40 further includes a second cooling module 45. The second cooling module 45 is disposed on one side of the second transmission module 42 adjacent to the base material 2 to complete the process. The baked substrates 2 are cooled. In the embodiment of the present application, the second cooling module 45 can adopt contact cooling or non-contact cooling, such as air cooling, air cooling, water cooling, cooling plate and other cooling methods.

於本申請一實施例中,第二緩衝閘門41有複數個,該些第二緩衝閘門41對應該些第二傳輸模組42位置作設置,以分別或全部輸入、輸出該些基材2。其中,第二緩衝閘門41的實施情形及效果,與第一緩衝閘門21相同,於此不再贅述。In one embodiment of the present application, there are a plurality of second buffer gates 41 , and the second buffer gates 41 are set corresponding to the positions of the second transmission modules 42 to input and output the substrates 2 respectively or entirely. The implementation and effect of the second buffer gate 41 are the same as those of the first buffer gate 21 and will not be described again here.

於本申請一實施例中,第二緩衝腔體40包含有一第二氮氣模組46,第二氮氣模組46設置於第二緩衝閘門41與第二烘烤進出口43之間,用以對該些基材2進行噴氣。其中,第二氮氣模組46的實施情形及效果,與第一氮氣模組26相同,於此不再贅述。In one embodiment of the present application, the second buffer cavity 40 includes a second nitrogen module 46. The second nitrogen module 46 is disposed between the second buffer gate 41 and the second baking inlet and outlet 43 for These base materials 2 are air-jetted. The implementation and effects of the second nitrogen module 46 are the same as those of the first nitrogen module 26 and will not be described again.

請參閱圖6所示,於本申請又一實施例中,本申請提供一種具緩衝處理的真空烘烤方法200,用以對複數基材2進行烘烤,真空烘烤方法200包含以下步驟:Please refer to FIG. 6 . In another embodiment of the present application, the present application provides a vacuum baking method 200 with buffer processing for baking a plurality of substrates 2 . The vacuum baking method 200 includes the following steps:

於步驟S1中:第一緩衝閘門21開啟,利用轉運傳輸模組11將輸入的該些基材2放入第一緩衝腔體20內,用以將該些基材2分別放入於該些第一傳輸模組22上,當第一緩衝閘門21關上時,第一抽真空模組24對第一緩衝腔體20進行抽真空。於步驟S2中:第一烘烤閘門31開啟,利用該些第一傳輸模組22將該些基材2放入於烘烤模組32,而第一烘烤閘門31關上,以對該些基材2進行真空烘烤。於步驟S3中:第一烘烤閘門31再次開啟,藉由該些第一傳輸模組22從真空烘烤腔體30中取出該些基材2放置於第一緩衝腔體20。In step S1: the first buffer gate 21 is opened, and the input substrates 2 are put into the first buffer cavity 20 using the transfer and transmission module 11, so as to place the substrates 2 into the first buffer cavity 20 respectively. On the first transmission module 22, when the first buffer gate 21 is closed, the first vacuum module 24 evacuates the first buffer cavity 20. In step S2: the first baking gate 31 is opened, the first transmission modules 22 are used to put the substrates 2 into the baking module 32, and the first baking gate 31 is closed to process the substrates 2. Substrate 2 is vacuum baked. In step S3: the first baking gate 31 is opened again, and the substrates 2 are taken out from the vacuum baking cavity 30 through the first transmission modules 22 and placed in the first buffer cavity 20.

於本申請一實施例中,於步驟S3之後更包含一步驟S4。於步驟S4中,開啟第一緩衝閘門21以將該些基材2的其中之一或全部進行輸出,且藉由一設置於第一緩衝腔體20內的第一氮氣模組26對完成烘烤的該些基材2進行噴氣。於步驟S4之後,第一緩衝腔體20繼續循環進行步驟S1、S2、S3、S4的作業。此實施例的好處在於,第一氮氣模組26能在該些基材2表面上形成保護膜,以延緩或降低基材2被大氣中的水氣再次附著的時間或機率。In an embodiment of the present application, step S4 is further included after step S3. In step S4, the first buffer gate 21 is opened to output one or all of the substrates 2, and the drying is completed through a first nitrogen module 26 disposed in the first buffer cavity 20. The baked base materials 2 are sprayed. After step S4, the first buffer cavity 20 continues to perform the operations of steps S1, S2, S3, and S4 in a cycle. The advantage of this embodiment is that the first nitrogen module 26 can form a protective film on the surface of the substrates 2 to delay or reduce the time or probability of the substrates 2 being re-adhered by moisture in the atmosphere.

請配合參閱圖7所示,圖7為真空烘烤方法200與時間關係示意圖。於本申請另一實施例中,於步驟S1之後更包含一步驟P1。於步驟P1中,第二緩衝閘門41開啟,利用轉運傳輸模組11繼續輸入另一批次的該些基材2至第二緩衝腔體40,用以將該些基材2分別放入該些第二傳輸模組42上,當第二緩衝閘門41關上時第三抽真空模組44對第二緩衝腔體40進行抽真空。而本申請並不限制步驟P1、步驟S2、步驟S3如圖7所示的前、後或於兩者間順序關係,亦即步驟P1可在步驟S2、步驟S3之前、後;步驟P1亦可介於步驟S2、步驟S3之間等情形。舉一個實際工作情形,當基材2放入第一緩衝腔體20後,於第一緩衝腔體20進行抽真空作業時,就可以將另一批次的基材2從基材轉運站10放入第二緩衝腔體40,藉以提升整體的運作效率。Please refer to FIG. 7 , which is a schematic diagram of the relationship between the vacuum baking method 200 and time. In another embodiment of the present application, step P1 is further included after step S1. In step P1, the second buffer gate 41 is opened, and the transfer and transmission module 11 is used to continue to input another batch of the substrates 2 into the second buffer cavity 40, so as to put the substrates 2 into the second buffer cavity 40 respectively. On the second transmission modules 42, when the second buffer gate 41 is closed, the third vacuum module 44 evacuates the second buffer cavity 40. This application does not limit the sequence relationship between steps P1, step S2, and step S3 as shown in Figure 7, that is, step P1 can be before or after step S2 and step S3; step P1 can also be Between step S2 and step S3, etc. To give an actual working situation, after the substrate 2 is put into the first buffer chamber 20 and the vacuum operation is performed in the first buffer chamber 20, another batch of substrates 2 can be transferred from the substrate transfer station 10 The second buffer cavity 40 is placed to improve the overall operating efficiency.

於本申請一實施例中,於步驟S3之後更包含一步驟P2。於步驟P2中,第二烘烤閘門34開啟,藉由該些第二傳輸模組42將該些基材2放入於烘烤模組32,而第二烘烤閘門34關上,以對該些基材2進行真空烘烤。In an embodiment of the present application, step P2 is further included after step S3. In step P2, the second baking gate 34 is opened, the substrates 2 are put into the baking module 32 through the second transmission modules 42, and the second baking gate 34 is closed to process the substrates 2. Some substrates 2 are vacuum baked.

於本申請一實施例中,於步驟P2後更包含一步驟P3。於步驟P3中,第一緩衝閘門21開啟,利用轉運傳輸模組11繼續輸入又一批次的該些基材2至該些第一傳輸模組22上,而第二烘烤閘門34再次開啟,藉由該些第二傳輸模組42從真空烘烤腔體30中取出已完成烘烤的該些基材2放置於第二緩衝腔體40。而本申請並不限制在步驟P2、步驟P3、步驟S4如圖7所示的前、後或於兩者間順序關係,亦即步驟S4可在步驟P2、步驟P3之前、後;步驟S4亦可介於步驟P2、步驟P3之間等情形。舉一個實際工作情形,若將完成烘烤後的基材2放置於第一緩衝腔體20後,由第一緩衝腔體20逐一將該些基材2放置於基材轉運站10時,就可以將第二緩衝腔體40內的該些基材2放入於閒置狀態的烘烤模組32。透過第一緩衝腔體20與第二緩衝腔體40於不同時間點,分別進行不同批次基材2的作業,以提高整體的運作效率。In an embodiment of the present application, step P3 is further included after step P2. In step P3, the first buffer gate 21 is opened, and the transfer and transmission module 11 is used to continue to input another batch of the substrates 2 onto the first transmission modules 22, and the second baking gate 34 is opened again. , the substrates 2 that have been baked are taken out from the vacuum baking cavity 30 through the second transmission modules 42 and placed in the second buffer cavity 40 . The present application is not limited to the sequence relationship between step P2, step P3 and step S4 as shown in Figure 7, that is, step S4 can be before or after step P2 and step P3; step S4 is also It can be between step P2 and step P3, etc. To give an actual working situation, if the baked substrates 2 are placed in the first buffer cavity 20, and the first buffer cavity 20 places the substrates 2 one by one in the substrate transfer station 10, then The substrates 2 in the second buffer cavity 40 can be placed into the baking module 32 in an idle state. Through the first buffer cavity 20 and the second buffer cavity 40, different batches of substrates 2 are processed at different time points, so as to improve the overall operation efficiency.

於本申請一實施例中,於步驟P3後更包含一步驟P4。於步驟P4中,開啟第二緩衝閘門41以將該些基材2的其中之一或全部進行輸出,且藉由一第二氮氣模組46對完成烘烤的該些基材2進行噴氣。而本申請亦不限制步驟S1在步驟P2、步驟P3、步驟P4如圖7所示的前、後順序關係,得依實際工作情形作調整。另需說明的是,如圖7所示,步驟S1至步驟S4與步驟P1至步驟P4之間僅以時間軸表示其對應步驟的時間關係,並無必須執行步驟P1之後才能執行步驟S2,或者執行步驟P2之後才能執行步驟S4的情形。In an embodiment of the present application, step P4 is further included after step P3. In step P4, the second buffer gate 41 is opened to output one or all of the substrates 2, and a second nitrogen module 46 is used to spray the baked substrates 2. This application does not limit the sequence relationship between step S1, step P2, step P3, and step P4 as shown in Figure 7, and may be adjusted according to actual working conditions. It should also be noted that, as shown in Figure 7, the time relationship between steps S1 to S4 and steps P1 to P4 is only represented by the time axis. It is not necessary to execute step P1 before step S2 can be executed, or The situation in which step S4 can be performed only after step P2 is performed.

綜上所述,本申請包含有以下技術特點:To sum up, this application contains the following technical features:

1.藉由第一緩衝腔體20作為真空烘烤腔體30的緩衝處理,避免真空烘烤腔體30與大氣環境作直接接觸。於真空烘烤腔體30進行下一批次基材2烘烤前,可以減少真空烘烤腔體30重新抽真空的時間,以提高烘烤的效率。1. The first buffer cavity 20 is used as a buffer for the vacuum baking cavity 30 to avoid direct contact between the vacuum baking cavity 30 and the atmospheric environment. Before baking the next batch of substrates 2 in the vacuum baking cavity 30, the time for re-evacuating the vacuum baking cavity 30 can be reduced to improve baking efficiency.

2.第一緩衝腔體20可以作為該些基材2烘烤後的降溫等待區,避免真空烘烤腔體30進行大幅度降溫,在下一批次基材2需要烘烤時,真空烘烤腔體30又重新進行升溫的作業,以減少真空烘烤腔體30升降溫作業所需要的準備時間。2. The first buffer cavity 20 can be used as a cooling waiting area for the substrates 2 after baking to prevent the vacuum baking cavity 30 from being significantly cooled. When the next batch of substrates 2 needs to be baked, vacuum baking The cavity 30 is heated again to reduce the preparation time required for the heating and cooling operation of the vacuum baking cavity 30 .

3.藉由設置複數個第一緩衝閘門21,第一緩衝腔體20可以分別開啟及關閉第一緩衝閘門21,就不會在第一緩衝閘門21開啟時,讓過多的空氣進入第一緩衝腔體20,使第一緩衝腔體20較容易維持隔絕的狀態。藉以降低該些基材2有接觸空氣的機會,進一步地提高該些基材2的製程良率。3. By arranging a plurality of first buffer gates 21, the first buffer cavity 20 can open and close the first buffer gates 21 respectively, so that too much air will not enter the first buffer when the first buffer gate 21 is opened. The cavity 20 makes it easier for the first buffer cavity 20 to maintain an isolated state. Thereby, the chance of the substrates 2 being exposed to air is reduced, and the process yield of the substrates 2 is further improved.

4.藉由第二緩衝腔體40的設置,於第一緩衝腔體20與第二緩衝腔體40配合之下,第一緩衝腔體20與第二緩衝腔體40可以在不同時間點輸入該些基材2進行真空烘烤,藉以提升整體的運作效率。4. Through the arrangement of the second buffer cavity 40, with the cooperation of the first buffer cavity 20 and the second buffer cavity 40, the first buffer cavity 20 and the second buffer cavity 40 can input at different time points. The substrates 2 are vacuum baked to improve overall operating efficiency.

前述功效並不妨礙其他功效之存在。若所屬技術領域之具有通常知識者自說明書、申請專利範圍或圖式等之記載可以導出之功效者,亦包含在本申請功效中。因此,本申請的功效不侷限於前述列舉之功效。The aforementioned effects do not prevent the existence of other effects. If a person with ordinary knowledge in the technical field can deduce the effect from the description, patent scope or drawings, etc., it is also included in the effect of this application. Therefore, the effects of this application are not limited to the effects listed above.

以上所舉實施例僅用以說明本申請而已,非用以限制本申請之範圍。舉凡不違本申請精神所從事的種種修改或變化,俱屬本申請意欲保護之範疇。The above embodiments are only used to illustrate the present application and are not intended to limit the scope of the present application. All modifications or changes that do not violate the spirit of this application fall within the scope of this application.

100A,100B:真空烘烤機構 1:製程機構 2:基材 3:載入站 4:製程腔體 5:輸送機構 6:載出站 10:基材轉運站 11:轉運傳輸模組 12:垂直升降模組 20:第一緩衝腔體 21:第一緩衝閘門 22:第一傳輸模組 23:第一烘烤進出口 24:第一抽真空模組 25:第一冷卻模組 26:第一氮氣模組 30:真空烘烤腔體 31:第一烘烤閘門 32:烘烤模組 33:第二抽真空模組 34:第二烘烤閘門 40:第二緩衝腔體 41:第二緩衝閘門 42:第二傳輸模組 43:第二烘烤進出口 44:第三抽真空模組 45:第二冷卻模組 46:第二氮氣模組 200:真空烘烤方法 S1:步驟 S2:步驟 S3:步驟 S4:步驟 P1:步驟 P2:步驟 P3:步驟 P4:步驟 100A, 100B: Vacuum baking mechanism 1: Processing mechanism 2:Substrate 3:Loading station 4: Process chamber 5: Conveying mechanism 6: Load out of station 10:Substrate transfer station 11:Transportation module 12:Vertical lifting module 20:First buffer cavity 21:First buffer gate 22:First transmission module 23:First Baking Import and Export 24:The first vacuum module 25:First cooling module 26:The first nitrogen module 30: Vacuum baking cavity 31: First baking gate 32: Baking module 33: Second vacuum module 34: Second baking gate 40: Second buffer cavity 41:Second buffer gate 42: Second transmission module 43: Second baking import and export 44: The third vacuum module 45: Second cooling module 46:Second Nitrogen Module 200: Vacuum baking method S1: Steps S2: Step S3: Steps S4: Steps P1: Steps P2: Step P3: Steps P4: Steps

圖1係為本申請第一實施例之俯視示意圖。 圖2係為本申請第一實施例之右側剖面示意圖。 圖3係為本申請第二實施例之俯視示意圖。 圖4係為本申請第二實施例之基材轉運站及第二緩衝腔體右側剖面示意圖。 圖5係為本申請第二實施例之第二緩衝腔體及真空烘烤腔體後側剖面示意圖。 圖6係為本申請一實施例之真空烘烤方法步驟示意圖。 圖7係為本申請另一實施例之真空烘烤方法步驟示意圖。 Figure 1 is a schematic top view of the first embodiment of the present application. Figure 2 is a schematic cross-sectional view on the right side of the first embodiment of the present application. Figure 3 is a schematic top view of the second embodiment of the present application. Figure 4 is a schematic cross-sectional view of the right side of the substrate transfer station and the second buffer cavity according to the second embodiment of the present application. Figure 5 is a schematic cross-sectional view of the rear side of the second buffer cavity and the vacuum baking cavity according to the second embodiment of the present application. Figure 6 is a schematic diagram of the steps of a vacuum baking method according to an embodiment of the present application. Figure 7 is a schematic diagram of the steps of a vacuum baking method according to another embodiment of the present application.

100A:真空烘烤機構 100A: Vacuum baking mechanism

2:基材 2:Substrate

10:基材轉運站 10:Substrate transfer station

11:轉運傳輸模組 11:Transportation module

12:垂直升降模組 12:Vertical lifting module

20:第一緩衝腔體 20:First buffer cavity

21:第一緩衝閘門 21:First buffer gate

22:第一傳輸模組 22:First transmission module

23:第一烘烤進出口 23:First Baking Import and Export

24:第一抽真空模組 24:The first vacuum module

25:第一冷卻模組 25:First cooling module

26:第一氮氣模組 26:The first nitrogen module

30:真空烘烤腔體 30: Vacuum baking cavity

31:第一烘烤閘門 31: First baking gate

32:烘烤模組 32: Baking module

33:第二抽真空模組 33: Second vacuum module

Claims (11)

一種具緩衝處理的真空烘烤機構,其與一製程機構連接,以對複數基材進行烘烤,該真空烘烤機構包含有: 一與該製程機構相鄰的基材轉運站,其包含有一轉運傳輸模組,該轉運傳輸模組用以取放該些基材; 一相鄰於該基材轉運站的第一緩衝腔體,其包含有一第一緩衝閘門、複數垂直方向間隔疊置的第一傳輸模組、一第一烘烤進出口以及一第一抽真空模組,該第一緩衝閘門係相鄰於該基材轉運站,該些基材係經由該第一緩衝閘門進出該第一緩衝腔體,該些第一傳輸模組係設置於該第一緩衝閘門與該第一烘烤進出口之間,用以各別接收或輸出各該基材進出該第一緩衝閘門或該第一烘烤進出口,而該第一抽真空模組於該第一緩衝閘門關上時進行抽真空;以及 一連接該第一緩衝腔體的真空烘烤腔體,其包含有一與該第一烘烤進出口連接的第一烘烤閘門及一烘烤模組,該第一烘烤閘門控制該真空烘烤腔體與該第一緩衝腔體之間的連通,該烘烤模組對該些基材進行真空烘烤。 A vacuum baking mechanism with buffer processing, which is connected to a process mechanism to bake multiple substrates. The vacuum baking mechanism includes: A substrate transfer station adjacent to the process mechanism, which includes a transfer and transmission module for picking up and placing the substrates; A first buffer cavity adjacent to the substrate transfer station, which includes a first buffer gate, a plurality of first transmission modules stacked at intervals in the vertical direction, a first baking inlet and outlet, and a first vacuum Module, the first buffer gate is adjacent to the substrate transfer station, the substrates enter and exit the first buffer cavity through the first buffer gate, and the first transmission modules are arranged at the first Between the buffer gate and the first baking inlet and outlet, it is used to respectively receive or output the substrates into and out of the first buffer gate or the first baking inlet and outlet, and the first vacuum module is in the Perform vacuuming when a buffer gate is closed; and A vacuum baking cavity connected to the first buffer cavity includes a first baking gate connected to the first baking inlet and outlet and a baking module. The first baking gate controls the vacuum baking The baking cavity is connected to the first buffer cavity, and the baking module performs vacuum baking on the substrates. 如請求項1所述之具緩衝處理的真空烘烤機構,其中,該基材轉運站更包含有一與該轉運傳輸模組連接的垂直升降模組,該垂直升降模組則控制該轉運傳輸模組於該基材轉運站進行垂直方向的移動。The vacuum baking mechanism with buffer processing as described in claim 1, wherein the base material transfer station further includes a vertical lifting module connected to the transfer and transmission module, and the vertical lifting module controls the transfer and transmission module. The group moves in the vertical direction at the substrate transfer station. 如請求項1所述之具緩衝處理的真空烘烤機構,其中,該第一緩衝閘門有複數個,該些第一緩衝閘門分別對應該些第一傳輸模組位置作設置。The vacuum baking mechanism with buffer processing as described in claim 1, wherein there are a plurality of first buffer gates, and the first buffer gates are respectively set corresponding to the positions of the first transmission modules. 如請求項1所述之具緩衝處理的真空烘烤機構,其中,該第一緩衝腔體更包含有一第一冷卻模組,用以對該些基材進行冷卻。The vacuum baking mechanism with buffer processing as described in claim 1, wherein the first buffer cavity further includes a first cooling module for cooling the substrates. 如請求項1所述之具緩衝處理的真空烘烤機構,其中,該第一緩衝腔體包含有一第一氮氣模組,該第一氮氣模組設置於該第一緩衝閘門與該第一烘烤進出口之間,用以對該些基材進行噴氣。The vacuum baking mechanism with buffer processing according to claim 1, wherein the first buffer cavity includes a first nitrogen module, and the first nitrogen module is disposed between the first buffer gate and the first drying Between the baking inlet and outlet, these substrates are sprayed. 如請求項1所述之具緩衝處理的真空烘烤機構,更包含一相鄰於該基材轉運站並與該真空烘烤腔體連接的第二緩衝腔體,該第二緩衝腔體包含有一第二緩衝閘門、複數垂直方向間隔疊置的第二傳輸模組、一第二烘烤進出口以及一第三抽真空模組,該第二緩衝閘門係相鄰於該基材轉運站,該些基材係經由該第二緩衝閘門進出該第二緩衝腔體,該些第二傳輸模組對應該些基材進出位置作設置,用以各別接收或輸出各該基材進出該第二緩衝閘門或該第二烘烤進出口,而該第三抽真空模組於該第二緩衝閘門關上時進行抽真空。The vacuum baking mechanism with buffer processing as described in claim 1, further includes a second buffer cavity adjacent to the substrate transfer station and connected to the vacuum baking cavity, the second buffer cavity includes There is a second buffer gate, a plurality of second transmission modules stacked at intervals in the vertical direction, a second baking inlet and outlet and a third vacuum module, the second buffer gate is adjacent to the substrate transfer station, The substrates enter and exit the second buffer cavity through the second buffer gate, and the second transmission modules are configured corresponding to the entry and exit positions of the substrates to receive or output the substrates respectively. Two buffer gates or the second baking inlet and outlet, and the third vacuum module performs vacuuming when the second buffer gate is closed. 如請求項6所述之具緩衝處理的真空烘烤機構,其中,該基材轉運站、該第一緩衝腔體、該第二緩衝腔體及該真空烘烤腔體為方形,該第一緩衝腔體與該第二緩衝腔體分別設於該基材轉運站相鄰接的兩側面,並且該第一緩衝腔體與該第二緩衝腔體亦分別連接於該真空烘烤腔體相鄰接的兩側面,以使該基材轉運站、該第一緩衝腔體、該第二緩衝腔體及該真空烘烤腔體呈田字形組合。The vacuum baking mechanism with buffer processing as described in claim 6, wherein the substrate transfer station, the first buffer cavity, the second buffer cavity and the vacuum baking cavity are square, and the first The buffer cavity and the second buffer cavity are respectively provided on two adjacent sides of the substrate transfer station, and the first buffer cavity and the second buffer cavity are also respectively connected to the vacuum baking cavity. The two adjacent side surfaces are arranged so that the base material transfer station, the first buffer cavity, the second buffer cavity and the vacuum baking cavity are combined in a field shape. 如請求項6所述之具緩衝處理的真空烘烤機構,其中,該真空烘烤腔體更包含有一與該第二烘烤進出口連接的第二烘烤閘門,該第二烘烤閘門控制該真空烘烤腔體與該第二緩衝腔體之間的連通。The vacuum baking mechanism with buffer processing as described in claim 6, wherein the vacuum baking cavity further includes a second baking gate connected to the second baking inlet and outlet, and the second baking gate controls There is communication between the vacuum baking cavity and the second buffer cavity. 如請求項6所述之具緩衝處理的真空烘烤機構,其中,該第二緩衝腔體更包含有一第二冷卻模組,用以對該些基材進行冷卻。The vacuum baking mechanism with buffer processing as described in claim 6, wherein the second buffer cavity further includes a second cooling module for cooling the substrates. 如請求項6所述之具緩衝處理的真空烘烤機構,其中,該第二緩衝閘門有複數個,該些第二緩衝閘門對應該些第二傳輸模組位置作設置。The vacuum baking mechanism with buffer processing as described in claim 6, wherein there are a plurality of second buffer gates, and the second buffer gates are arranged corresponding to the positions of the second transmission modules. 如請求項6所述之具緩衝處理的真空烘烤機構,其中,該第二緩衝腔體包含有一第二氮氣模組,該第二氮氣模組設置於該第二緩衝閘門與該第二烘烤進出口之間,用以對該些基材進行噴氣。The vacuum baking mechanism with buffer processing as described in claim 6, wherein the second buffer cavity includes a second nitrogen module, and the second nitrogen module is disposed between the second buffer gate and the second baking Between the baking inlet and outlet, these substrates are sprayed.
TW112206773U 2023-06-30 2023-06-30 Vacuum baking structure with buffer processing TWM646905U (en)

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