CN220357428U - Glue spreading and developing equipment - Google Patents

Abstract

The utility model provides a glue coating developing device, which comprises a film box module, an interlayer process module, an in-layer process module and a wall penetrating unit group; the film box module and the in-layer process module are respectively arranged at two sides of the in-layer process module; the wafer box module is used for loading and transmitting a wafer conveying box, and the wafer conveying box is used for loading wafers; an interlayer manipulator group is arranged in the interlayer process module and used for conveying wafers in the interlayer process module; an L-layer process layer is arranged in the intra-layer process module; each process layer comprises an in-layer manipulator and an in-layer process group, wherein the in-layer manipulator is used for conveying wafers in the process layer; the in-layer process group comprises a liquid treatment unit group and two heat treatment unit groups; the liquid treatment unit group comprises a plurality of liquid treatment units and is used for carrying out liquid treatment on the wafer; each heat treatment unit group comprises a plurality of heat treatment units for baking the wafer. The device is used for improving the productivity of the gluing and developing device.

Description

Glue spreading and developing equipment

Technical Field

The utility model relates to the field of wafer processing, in particular to a glue spreading and developing device.

Background

In the existing photoetching process for semiconductor processing, photoresist coating process flow, photoetching process flow and developing process flow are respectively completed by photoresist coating equipment, photoetching equipment and developing equipment. With the improvement of the semiconductor processing technology level, the market mainstream connects the photoresist coating and developing device and the photolithography device together to complete the whole set of photolithography process flow, wherein the photoresist coating process flow and the developing process flow are generally integrated on the same device, and the capacity of the photoresist coating and developing device is required to be larger than that of the photolithography device.

At present, a flow sheet (flow) mode of a line (Inline) architecture is generally adopted, so that the flow sheet is only suitable for a pipelined process flow, and is difficult to be suitable for various process flows. When the repeated process is applied to a sheet-flowing mode of a line-type framework, the same process equipment is required to be repeatedly connected in series, so that the assembly line is tedious and the occupied area is large; because the reuse rate of the process equipment of the line architecture is low, once the process equipment at one place is damaged, the whole assembly line stops running, which is not beneficial to improving the productivity. Accordingly, a new gumming developing apparatus is needed to improve the above-mentioned problems.

Disclosure of Invention

The utility model aims to provide a glue coating and developing device which is used for improving the productivity of the glue coating and developing device.

In a first aspect, the utility model provides a photoresist coating and developing device, which is applied to a photoresist coating and developing process scene of a wafer, and comprises a wafer box module, an interlayer process module, an in-layer process module and a wall penetrating unit group; the wafer box module and the in-layer process module are respectively arranged at two sides of the interlayer process module; the wafer box module is used for loading and transmitting a wafer conveying box, and the wafer conveying box is used for loading wafers; an interlayer manipulator group is arranged in the interlayer process module and used for conveying wafers in the interlayer process module; l process layers are arranged in the intra-layer process module, and L is an integer which is arbitrarily more than 1; each process layer comprises an in-layer manipulator and an in-layer process group, wherein the in-layer manipulator is used for conveying wafers in the process layer; the in-layer process group comprises a liquid treatment unit group and two heat treatment unit groups; the two heat treatment unit groups are arranged on two sides of the liquid treatment unit group; the liquid treatment unit group comprises a plurality of liquid treatment units and is used for carrying out liquid treatment on the wafer; each heat treatment unit group comprises a plurality of heat treatment units and is used for baking the wafer; the wall penetrating unit is arranged between the in-layer process module and the interlayer process module; the L through-wall unit groups are arranged in one-to-one correspondence with the L process layers; each of the wall-penetrating unit groups is used for conveying wafers from an interlayer process module to the process layer or/and conveying wafers from the process layer to the interlayer process module.

The beneficial effects of the utility model are as follows: the utility model is applicable to various process flows by arranging the wafer box module and the in-layer process module on two sides of the inter-layer process module respectively. Through the L process layers, each process layer comprises an in-layer manipulator and an in-layer process group, repeated serial connection of process equipment is not needed, and the occupied area of the equipment is reduced, so that the cost is not saved; even if the intra-layer process group of one process layer is damaged, the intra-layer process groups of other process layers can be reused, the wafer processing is not stopped, the reuse rate of equipment is improved, and the productivity is improved. Through the wall penetrating unit group, the wafer is transmitted between the in-layer process module and the interlayer process module, the situation that the wafer occupies the in-layer manipulator and the interlayer manipulator at the same time can be avoided, and the whole working efficiency of the gluing and developing equipment is improved.

Optionally, a first process layer, a second process layer and a third process layer which are arranged in the vertical direction are arranged in the intra-layer process module; the interlayer manipulator group is used for transporting a wafer in the vertical direction so that the wafer can be transferred to the first process layer, the second process layer or the third process layer; each wall penetrating unit group is provided with a wall penetrating manipulator, and the wall penetrating manipulator is used for loading wafers, conveying the wafers from an interlayer process module to the process layer, or/and conveying the wafers from the process layer to the interlayer process module.

Optionally, the wafer box module is provided with a wafer box manipulator and a wafer box buffer position; the wafer box manipulator is used for loading the wafer transfer box so as to place the wafer transfer box in the wafer box cache position; the wafer box cache positions are arranged in one-to-one correspondence with the wafer conveying boxes.

Optionally, the wafer cassette module further includes a wafer cassette loading unit for opening or closing the wafer transfer cassette; the wafer box module is provided with a wafer manipulator group; the wafer manipulator group is used for taking out the wafer from the wafer transfer box or placing the wafer into the wafer transfer box.

Optionally, the interlayer process module or the in-layer process module is further provided with a pretreatment unit for pretreating the wafer surface before liquid treatment so as to thicken the wafer surface.

Optionally, a cooling unit and an optical centering processing unit are also arranged in the intra-layer process module; the cooling unit is used for cooling the heat-treated wafer; the optical centering processing unit is used for calibrating the placement position of the wafer.

Optionally, the interlayer manipulator group and the interlayer manipulator are provided with two groups of end effectors facing opposite directions, the number of each group of end effectors is M, and M is an integer greater than or equal to 2.

Optionally, the wafer processing device further comprises a control unit, wherein the control unit is used for controlling the working states of the interlayer manipulator group and the interlayer manipulator so as to enable the wafer to be processed in the device in different processing processes successively.

In a second aspect, the present utility model provides a photoresist coating and developing method for performing a photoresist coating and developing process on a wafer, including: s1, controlling a wafer box manipulator to put a wafer transfer box into a wafer box loading unit, and opening the wafer transfer box by the wafer box loading unit; controlling the wafer manipulator group to send the wafer from the wafer box module to the wafer placement position of the interlayer process module; s2, placing the wafer into a wall-penetrating unit group corresponding to a target layer by an interlayer manipulator group, and conveying the wafer to the target layer after the wall-penetrating unit group loads the wafer; s3, loading the wafer by the in-layer manipulator of the target layer, and enabling the wafer to sequentially pass through the in-layer process group so as to enable the wafer to be subjected to at least one treatment including baking, cooling, gluing or optical centering; s4, placing the wafer into a wall-penetrating unit group corresponding to the target layer by the intra-layer manipulator, and updating the target layer after the wafer is conveyed back to the inter-layer process module after the wall-penetrating unit group loads the wafer; s5, repeating the steps S2-S4 until the gluing and developing process of the wafer is completed; s6, the interlayer manipulator group places the transferred wafer at a wafer transmission position; and the wafer manipulator group acquires the wafer from the wafer transmission position and places the wafer into a wafer conveying box.

Optionally, the in-layer manipulator places the wafer on a wall-penetrating unit group corresponding to the target layer, and after the wall-penetrating unit group loads the wafer, the wafer is transferred back to the interlayer process module to update the target layer, including: the in-layer manipulator puts the wafer into a wall-penetrating unit group corresponding to the target layer, and after the wafer is loaded by the wall-penetrating unit group, the wafer is conveyed back to the interlayer process module, and then the target layer is updated from the second process layer to the first process layer; or the in-layer manipulator puts the wafer into a wall-penetrating unit group corresponding to the target layer, and after the wafer is loaded by the wall-penetrating unit group, the wafer is conveyed back to the interlayer process module, and then the target layer is updated from the first process layer to the third process layer; or the in-layer manipulator puts the wafer into the through-wall unit group corresponding to the target layer, and after the through-wall unit group loads the wafer, the wafer is conveyed back to the interlayer process module, and then the target layer is updated from the second process layer to the third process layer.

Optionally, the in-layer robot of the target layer loads the wafer and makes the wafer pass through the in-layer process group sequentially, so that the wafer sequentially passes through at least one treatment including baking, cooling, gluing or optical centering, including: the in-layer manipulator of the target layer loads the wafer, and the wafer sequentially passes through the in-layer process group, so that the wafer sequentially passes through the first baking, cooling, gluing and the second baking treatment; or the in-layer manipulator of the target layer loads the wafer, and the wafer sequentially passes through the in-layer process group so that the wafer sequentially passes through baking and cooling treatment; or the in-layer manipulator of the target layer loads the wafer, and the wafer sequentially passes through the in-layer process group, so that the wafer is sequentially subjected to gluing, baking, cooling and optical centering treatment.

Drawings

Fig. 1 is a schematic structural diagram of a gumming developing apparatus provided by the present utility model;

FIG. 2 is a schematic diagram of a first process layer corresponding to a through-wall unit set according to the present utility model;

FIG. 3 is a schematic view of a cassette module according to the present utility model;

FIG. 4 is a schematic top view of a first process layer according to the present utility model;

fig. 5 is a schematic structural diagram of each manipulator in a glue spreading and developing device according to the present utility model;

fig. 6 is a schematic flow chart of a glue spreading and developing method provided by the utility model.

Reference numerals in the drawings:

100. a cassette module; 110. a wafer transfer box; 120. a cassette buffer location; 130. a wafer robot; 140. a cassette manipulator; 150. a cassette loading unit; 200. an interlayer process module; 210. an interlayer manipulator group; 300. an in-layer process module; 310. an in-layer manipulator; 301. a first intra-layer manipulator; 302. a manipulator in the second layer; 303. a third layer of inner manipulators; 311. a first end effector; 312. a second end effector; 313. a third end effector; 314. a fourth end effector; 320. an in-layer process group; 321. a first heat treatment unit group; 322. a second heat treatment unit group; 323. a liquid treatment unit group; 330. a wall penetrating unit group; 331. the first wall penetrating manipulator; 332. and the second wall penetrating manipulator.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described below with reference to the accompanying drawings, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.

In view of the problems in the prior art, as shown in fig. 1, the present utility model provides a photoresist coating and developing apparatus, which is applied to a process scenario of photoresist coating and developing of a wafer, and includes a wafer box module 100, an interlayer process module 200, an interlayer process module 300 and a wall penetrating unit group 330; the wafer box module 100 and the in-layer process module 300 are respectively arranged at two sides of the interlayer process module 200; the wafer cassette module 100 is used for loading and transporting wafer cassettes, which are used for loading wafers; an interlayer manipulator group 210 is arranged in the interlayer process module 200, and the interlayer manipulator group 210 is used for conveying wafers in the interlayer process module 200; an L-layer process layer is arranged in the intra-layer process module 300, wherein L is an integer which is arbitrarily more than 1; each process layer includes an in-layer robot 310 and an in-layer process set 320, the in-layer robot 310 for transporting wafers within the process layer; the wall-penetrating unit group 330 is disposed between the in-layer process module 300 and the inter-layer process module 200; l through-wall unit groups 330 are arranged in one-to-one correspondence with the L process layers; each of the wall-penetrating unit groups 330 is used to transfer wafers from the inter-layer process module 200 to the process layer or/and transfer wafers from the process layer to the inter-layer process module 200.

Specifically, the L is set to 3, and a first process layer, a second process layer and a third process layer which are arranged in the vertical direction are arranged in the intra-layer process module 300; the inter-layer robot 210 is configured to transport a wafer in a vertical direction so that the wafer can be transferred to the first process layer, the second process layer, or the third process layer;

as shown in fig. 2, each of the wall penetrating unit groups 330 is provided with a wall penetrating robot for loading wafers, transferring wafers from the interlayer process module 200 to the process layer, or/and transferring wafers from the process layer to the interlayer process module 200.

More specifically, the wall-penetrating unit set 330 corresponding to the first process layer includes a first wall-penetrating manipulator 331 and a second wall-penetrating manipulator 332; the first wall-penetrating robot 331 is configured to transfer wafers from the inter-layer process module 200 to the process layer; the second through-wall robot 332 is configured to transfer wafers from the process layer to the interlayer process module 200.

In other embodiments, the wall-penetrating unit group 330 corresponding to the first process layer includes a third wall-penetrating robot; the third wall-penetrating robot is used to transfer wafers from the interlayer process module 200 to the process layer and to transfer wafers from the process layer to the interlayer process module 200.

The through-wall manipulator can be any one of a hydraulic manipulator, a pneumatic manipulator, an electric manipulator and a mechanical manipulator, and can be used for conveying the wafer. In this embodiment, the set wafer cassette module 100 and the intra-layer process module 300 are respectively disposed on two sides of the inter-layer process module 200, which is suitable for various process flows. Through the L process layers, each process layer comprises an intra-layer manipulator 310 and an intra-layer process group 320, repeated serial connection of process equipment is not needed, and the occupation area of the equipment is reduced, so that the cost is not beneficial to saving; even if the intra-layer process group 320 of a certain process layer is damaged, the intra-layer process groups 320 of other process layers can be reused, the wafer processing is not stopped, the reuse rate of equipment is improved, and the productivity is improved. Through the wall penetrating unit group 330, the wafer is transmitted between the in-layer process module 300 and the interlayer process module 200, so that the situation that the wafer occupies the in-layer manipulator 310 and the interlayer manipulator at the same time can be avoided, and the overall working efficiency of the gluing and developing equipment can be improved.

As shown in fig. 3, in some embodiments, the cassette module 100 is provided with a cassette robot 140 and a cassette buffer location 120; the wafer cassette robot 140 is configured to load the wafer cassette to place the wafer cassette in the cassette cache location 120; the wafer cassette buffer locations 120 are arranged in one-to-one correspondence with the wafer cassettes.

In other embodiments, cassette module 100 further includes a cassette loading unit 150 for opening or closing a wafer cassette; the wafer cassette module 100 is provided with a wafer manipulator 130 set; the wafer robot 130 is configured to take out wafers from the wafer cassette or place wafers into the wafer cassette.

Specifically, the 4 wafer cassettes are disposed in the 4 cassette buffer locations 120 in a one-to-one correspondence; each cassette loading unit 150 is configured to open a corresponding wafer cassette; the cassette robot 140 and the wafer robot 130 may be any one of a hydraulic robot, a pneumatic robot, an electric robot, and a mechanical robot.

As shown in fig. 4, in some embodiments, the in-layer process group 320 includes a liquid treatment unit group 323, a first heat treatment unit group 321, and a second heat treatment unit group 322; the first heat treatment unit group 321 and the second heat treatment unit group 322 are disposed at both sides of the liquid treatment unit group 323; the liquid processing unit group 323 includes a plurality of liquid processing units for performing liquid processing on the wafer; each heat treatment unit group comprises a plurality of heat treatment units and is used for baking the wafer.

Specifically, the first heat treatment unit includes two heat treatment units; the liquid processing unit group 323 includes six liquid processing units; the second heat treatment unit includes four heat treatment units. The heat treatment units are arranged in the inner process group 320 in two rows; the liquid treatment units are arranged in two rows in the inner process group 320.

In some embodiments, the inter-layer robot group 210 and the intra-layer robot 310 each have two sets of end effectors facing opposite directions, each set having a number M, M being an integer greater than or equal to 2. Illustratively, M is provided as 4,4 end effectors arranged in 2 rows within the layer process set 320.

Specifically, the first end effector 311 is configured to send the first wafer into the first heat treatment unit; the second end effector 312 is used to feed the second wafer into the second thermal processing unit; the third end effector 313 is used to feed the third wafer into the third heat treatment unit; the fourth end effector 314 is used to feed a fourth wafer into a fourth thermal processing unit.

After the wafer heat treatment is completed, the first end effector 311 is configured to send the first wafer to the first liquid processing unit; the second end effector 312 is configured to feed the second wafer into the second fluid processing unit; the third end effector 313 is configured to send the third wafer to the third liquid handling unit; the fourth end effector 314 is configured to deliver a fourth wafer to the fourth fluid process unit.

It should be noted that, in this embodiment, by setting 4 end effectors, 4 wafers can be subjected to heat treatment or liquid treatment at the same time, so that the waiting time for the manipulator to be in place can be reduced, and the productivity can be improved.

In some embodiments, a pretreatment unit is further disposed in the interlayer process module 200 or the in-layer process module 300, for pretreating the wafer surface before the liquid treatment to thicken the wafer surface. Specifically, the pretreatment unit is used for attaching Hexamethyldisilazane (HMDS) to the surface of the wafer so as to thicken the surface of the wafer. In some embodiments, the pretreatment unit may be disposed within the in-layer process module 300, and in other embodiments, the pretreatment unit may be disposed within the in-layer process module 200.

In some embodiments, a cooling unit and an optical centering unit are also disposed within the in-layer process module 300; the cooling unit is used for cooling the heat-treated wafer; the optical centering processing unit is used for calibrating the placement position of the wafer.

Specifically, the two cooling units are symmetrically arranged in the inner process module 300; the two optical centering units are symmetrically arranged in the intra-layer process module 300. The first end effector 311 places the first wafer in the first cooling unit while the second end effector 312 places the second wafer in the second cooling unit. While the first end effector 311 is placing the first wafer in the first optical centering unit, the second end effector 312 is placing the second wafer in the second optical centering unit.

It is worth noting that the cooling unit may be provided as a cooling table or a cooling chamber. The optical centering unit comprises a controller, a charge coupled device image sensor (Charge Coupled Device, CCD) and a mechanical arm; when the controller confirms that the position of the wafer in the image detected by the CCD image sensor deviates from a preset position, the controller is used for controlling the mechanical arm to pull the wafer to return to the preset position.

In still other embodiments, a spin-on carbon unit is also included; the spin-coating carbon unit is a spin-coating machine and is used for spin-coating a carbon layer on the surface of the wafer.

In still other embodiments, an anti-reflection processing unit is further included; the Anti-reflection processing unit is a coater for applying an Anti-reflection coating (Anti-Reflection Coating, ARC) to the surface of the wafer, wherein the Anti-reflection coating can be silicon.

In still other embodiments, the apparatus further includes a control unit, configured to control the working states of the inter-layer robot group 210 and the intra-layer robot 310, so that the wafers are sequentially processed in the apparatus. Specifically, the control unit is configured as a processor.

Referring to fig. 5 and 1, cassette robot 140, wafer robot 130, and cassette loading unit 150 are all located within cassette module 100; the interlayer robot group 210 is located within the interlayer process module 200; the first layer inner robot 301, the second layer inner robot 302, and the third layer inner robot 303 are all located within the interlayer process module 300.

As shown in fig. 6, the present utility model provides a photoresist coating and developing method for performing a photoresist coating and developing process on a wafer, including: s1, controlling a wafer box manipulator to put a wafer transfer box into a wafer box loading unit, and opening the wafer transfer box by the wafer box loading unit; controlling the wafer manipulator group to send the wafer from the wafer box module to the wafer placement position of the interlayer process module; s2, placing the wafer into a wall-penetrating unit group corresponding to a target layer by an interlayer manipulator group, and conveying the wafer to the target layer after the wall-penetrating unit group loads the wafer; s3, loading the wafer by the in-layer manipulator of the target layer, and enabling the wafer to sequentially pass through the in-layer process group so as to enable the wafer to be subjected to at least one treatment including baking, cooling, gluing or optical centering; s4, placing the wafer into a wall-penetrating unit group corresponding to the target layer by the intra-layer manipulator, and updating the target layer after the wafer is conveyed back to the inter-layer process module after the wall-penetrating unit group loads the wafer; s5, repeating the steps S2-S4 until the gluing and developing process of the wafer is completed; s6, the interlayer manipulator group places the transferred wafer at a wafer transmission position; and the wafer manipulator group acquires the wafer from the wafer transmission position and places the wafer into a wafer conveying box.

Specifically, when the S2-S4 is executed for the first time, the method comprises the steps that S2, a target layer is set to be a second process layer, the wafer is placed into a wall penetrating unit group corresponding to the second process layer by an interlayer manipulator group, and the wafer is sent to the second process layer after the wafer is loaded by the wall penetrating unit group; s3, loading the wafer by the in-layer manipulator of the second process layer, and enabling the wafer to pass through the in-layer process group in sequence, so that the wafer is subjected to first baking, first cooling, first gluing and second baking treatment; s4, the in-layer manipulator puts the wafer into the through-wall unit group corresponding to the second process layer, and after the through-wall unit group loads the wafer, the wafer is conveyed back to the interlayer process module and then the target layer is updated to the first process layer.

When the S2-S4 is executed for the second time, the method comprises the steps that S2, a target layer is set to be a first process layer, the wafer is placed into a wall penetrating unit group corresponding to the first process layer by an interlayer manipulator group, and the wafer is sent to the first process layer after the wafer is loaded by the wall penetrating unit group; s3, loading the wafer by the in-layer manipulator of the first process layer, and enabling the wafer to pass through the in-layer process group in sequence, so that the wafer is subjected to third baking and second cooling treatment; s4, the in-layer manipulator puts the wafer into the through-wall unit group corresponding to the first process layer, and after the through-wall unit group loads the wafer, the wafer is conveyed back to the interlayer process module and then the target layer is updated to be the third process layer.

When the S2-S4 is executed for the third time, the method comprises the steps that S2, a target layer is set to be a third process layer, the wafer is placed into a wall penetrating unit group corresponding to the third process layer by an interlayer manipulator group, and the wafer is sent to the third process layer after the wafer is loaded by the wall penetrating unit group; s3, loading the wafer by the in-layer manipulator of the third process layer, and enabling the wafer to pass through the in-layer process group in sequence, so that the wafer is subjected to second gluing, fourth baking, third cooling and optical centering treatment; s4, the wafer is placed into the wall-penetrating unit group corresponding to the third process layer by the in-layer manipulator, and the wafer is conveyed back to the interlayer process module after being loaded by the wall-penetrating unit group, and then the gluing and developing process is completed.

In other embodiments, when executing S2-S4 for the first time, the method includes S2, setting the target layer as a second process layer, and placing the wafer in a through-wall unit group corresponding to the second process layer by an interlayer manipulator group, where the through-wall unit group loads the wafer and then sends the wafer to the second process layer; s3, loading the wafer by the in-layer manipulator of the second process layer, and enabling the wafer to pass through the in-layer process group in sequence, so that the wafer is subjected to first baking, first cooling and spin-coating carbon treatment; s4, the in-layer manipulator puts the wafer into the through-wall unit group corresponding to the second process layer, and after the through-wall unit group loads the wafer, the wafer is conveyed back to the interlayer process module and then the target layer is updated to the first process layer.

When the S2-S4 is executed for the second time, the method comprises the steps that S2, a target layer is set to be a third process layer, the wafer is placed into a wall penetrating unit group corresponding to the third process layer by an interlayer manipulator group, and the wafer is sent to the third process layer after the wafer is loaded by the wall penetrating unit group; s3, loading the wafer by the in-layer manipulator of the third process layer, and enabling the wafer to pass through the in-layer process group in sequence, so that the wafer is subjected to second cooling, anti-reflection layer coating, second baking and optical centering treatment; s4, the wafer is placed into the wall-penetrating unit group corresponding to the third process layer by the in-layer manipulator, and the wafer is conveyed back to the interlayer process module after being loaded by the wall-penetrating unit group, and then the gluing and developing process is completed.

It should be noted that the wafer cassette described in S1 and the wafer cassette described in S6 are different wafer cassettes. Specifically, among the 4 pods in the foregoing embodiment, the pods in S1 are the first pod and the third pod, and the pods in S6 are the second pod and the fourth pod. The first and third pods in S1 are loaded with wafers that are placed into the second and fourth pods in S6. The embodiment can prevent wafers before and after the glue spreading and developing process from being mixed into the same wafer conveying box, and can prevent the wafers from being polluted.

While embodiments of the present utility model have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present utility model as set forth in the following claims. Moreover, the utility model described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims (8)

1. The gluing and developing equipment is applied to a technological scene of gluing and developing a wafer and is characterized by comprising a wafer box module, an interlayer process module, an in-layer process module and a wall penetrating unit group;

the wafer box module and the in-layer process module are respectively arranged at two sides of the interlayer process module;

the wafer box module is used for loading and transmitting a wafer conveying box, and the wafer conveying box is used for loading wafers;

an interlayer manipulator group is arranged in the interlayer process module and used for conveying wafers in the interlayer process module;

l process layers are arranged in the intra-layer process module, and L is an integer which is arbitrarily more than 1; each process layer comprises an in-layer manipulator and an in-layer process group, wherein the in-layer manipulator is used for conveying wafers in the process layer; the in-layer process group comprises a liquid treatment unit group and two heat treatment unit groups; the two heat treatment unit groups are arranged on two sides of the liquid treatment unit group; the liquid treatment unit group comprises a plurality of liquid treatment units and is used for carrying out liquid treatment on the wafer; each heat treatment unit group comprises a plurality of heat treatment units and is used for baking the wafer;

the wall penetrating unit is arranged between the in-layer process module and the interlayer process module; the L through-wall unit groups are arranged in one-to-one correspondence with the L process layers; each of the wall-penetrating unit groups is used for conveying wafers from an interlayer process module to the process layer or/and conveying wafers from the process layer to the interlayer process module.

2. The apparatus of claim 1, wherein the intra-layer process module has first, second and third process layers disposed in a vertical direction therein;

the interlayer manipulator group is used for transporting a wafer in the vertical direction so that the wafer can be transferred to the first process layer, the second process layer or the third process layer;

each wall penetrating unit group is provided with a wall penetrating manipulator, and the wall penetrating manipulator is used for loading wafers, conveying the wafers from an interlayer process module to the process layer, or/and conveying the wafers from the process layer to the interlayer process module.

3. The apparatus of claim 1, wherein the cassette module is provided with a cassette robot and a cassette buffer location;

the wafer box manipulator is used for loading the wafer transfer box so as to place the wafer transfer box in the wafer box cache position;

the wafer box cache positions are arranged in one-to-one correspondence with the wafer conveying boxes.

4. The apparatus of claim 1, wherein the cassette module further comprises a cassette loading unit for opening or closing a wafer cassette; the wafer box module is provided with a wafer manipulator group; the wafer manipulator group is used for taking out the wafer from the wafer transfer box or placing the wafer into the wafer transfer box.

5. The apparatus of claim 1, wherein the inter-layer process module or the intra-layer process module further comprises a pretreatment unit for pretreating the wafer surface prior to liquid treatment to thicken the wafer surface.

6. The apparatus of claim 1, wherein a cooling unit and an optical centering unit are also provided within the intra-layer process module;

the cooling unit is used for cooling the heat-treated wafer; the optical centering processing unit is used for calibrating the placement position of the wafer.

7. The apparatus of claim 1, wherein the inter-layer robot group and the intra-layer robot each have two groups of end effectors facing opposite directions, the number of each group of end effectors being M, M being an integer greater than or equal to 2.

8. The apparatus of claim 1, further comprising a control unit for controlling the working states of the inter-layer robot group and the intra-layer robot to sequentially perform different processing processes on the wafer within the apparatus.