TWM635439U - Circuit protection device - Google Patents
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本創作係關於一種電路保護元件,更具體而言,關於一種具有並聯熱敏元件的熱穩定型電路保護元件。The present invention relates to a circuit protection element, and more specifically, to a heat-stable circuit protection element with a thermally sensitive element connected in parallel.
習知具有正溫度係數(Positive Temperature Coefficient,PTC)特性之導電複合材料之電阻對於特定溫度之變化相當敏銳,可作為電流感測元件的材料,且目前已被廣泛應用於電路保護元件中。具體而言,PTC導電複合材料在正常溫度下之電阻可維持極低值,使電路或電池得以正常運作。但是,當電路或電池發生過電流(over-current)或過高溫(overtemperature)的現象時,其電阻值會瞬間提高至一高電阻狀態(至少10 4Ω以上),即所謂之觸發(trip),而將過量之電流截斷,以達到保護電池或電路元件之目的。 It is known that the resistance of conductive composite materials with positive temperature coefficient (Positive Temperature Coefficient, PTC) characteristics is very sensitive to the change of specific temperature, which can be used as the material of the current sensing element, and has been widely used in circuit protection elements. Specifically, the resistance of PTC conductive composite materials can maintain a very low value at normal temperature, so that the circuit or battery can operate normally. However, when an over-current or overtemperature occurs in a circuit or a battery, its resistance value will instantly increase to a high resistance state (at least 10 4 Ω), which is called a trip. , and cut off the excessive current to achieve the purpose of protecting the battery or circuit components.
以高分子PTC材料為例,通常使用碳黑作為導電填料,而將碳黑分散在結晶性高分子聚合物之間。這種晶體結構使的碳粒子集中分佈在晶界中,它們之間排的非常緊密,電流可以經由這些「碳鏈」流過絕緣的塑料聚合物。在正常室溫條件下,這些高分子聚合物中存有相當數量的碳鏈,因而構成導電的通道。當過電流使得元件溫度上升直到超過高分子聚合物的相變溫度(例如熔點),高分子聚合物會膨脹而將原本緊密連接的碳粒子拉開距離。如此,導電的碳鏈通道被破壞而不能再傳導電流,使得電阻也隨之急劇上升,即所謂的「觸發(trip)」現象。Taking polymer PTC materials as an example, carbon black is usually used as a conductive filler, and carbon black is dispersed between crystalline polymers. This crystal structure allows the carbon particles to be concentrated in the grain boundaries, and they are packed so tightly together that electricity can flow through the insulating plastic polymer via these "carbon chains". Under normal room temperature conditions, there are a considerable number of carbon chains in these high molecular polymers, thus forming a conductive channel. When the overcurrent causes the temperature of the component to rise until it exceeds the phase transition temperature (such as the melting point) of the polymer, the polymer will expand and the carbon particles that were originally tightly connected will be separated. In this way, the conductive carbon chain channel is destroyed and can no longer conduct current, so that the resistance also rises sharply, which is the so-called "trip" phenomenon.
當溫度回復至低於其相變溫度時,聚合物會重新結晶,導電碳鏈也再重新形成。但實務上因高分子聚合物膨脹無法完全回復的關係,使得導電碳鏈並無法維持原有的導電性,因此電阻無法回復至原來的低阻值。另外,多次觸發後有電阻值大幅增加的現象,亦即有電阻回復性或電阻再現性不佳的問題。When the temperature returns below its phase transition temperature, the polymer recrystallizes and the conductive carbon chains reform. However, in practice, the conductive carbon chain cannot maintain the original conductivity due to the incomplete recovery of the polymer expansion, so the resistance cannot return to the original low resistance value. In addition, there is a phenomenon that the resistance value increases significantly after repeated triggering, that is, there is a problem of poor resistance recovery or resistance reproducibility.
更詳細地說,PTC聚合物材料於觸發時,會產生相當大的體積變化率,其熱膨脹係數(Coefficient of Thermal Expansion,CTE)會驟升(例如:至5000 ppm/K以上)。所以,PTC聚合物材料經多次觸發後,多次於體積上的劇烈變化會使結構無法恢復到初始狀態,進而導致其電阻值於室溫下大幅度攀升的情形。然而,PTC材料層表面接觸的導電層大部分採用例如鎳箔、銅箔或鍍鎳銅箔等金屬導電材料,其中銅箔及鍍鎳銅箔的熱膨脹係數約為17 ppm/K,鎳箔的熱膨脹係數為13 ppm/K,均遠小於PTC聚合物材料之熱膨脹係數。故於傳統上,主要是改良導電層的結構設計,以解決前述電阻再現性的問題。例如:將導電層的厚度增加以加強結構強度。In more detail, when the PTC polymer material is triggered, it will produce a considerable volume change rate, and its coefficient of thermal expansion (Coefficient of Thermal Expansion, CTE) will suddenly increase (for example: to more than 5000 ppm/K). Therefore, after multiple triggers, the PTC polymer material undergoes multiple drastic changes in volume, which will make the structure unable to return to the initial state, and then lead to a situation where its resistance value rises sharply at room temperature. However, most of the conductive layers in contact with the surface of the PTC material layer are made of metal conductive materials such as nickel foil, copper foil or nickel-plated copper foil, where the thermal expansion coefficient of copper foil and nickel-plated copper foil is about 17 ppm/K, and that of nickel The coefficient of thermal expansion is 13 ppm/K, which is much smaller than that of PTC polymer materials. Therefore, traditionally, the structural design of the conductive layer is mainly improved to solve the aforementioned problem of resistance reproducibility. For example: increasing the thickness of the conductive layer to strengthen the structural strength.
再者,現今電子產品開發突飛猛進,待電路保護的產品(例如:電池) 為了達到快速充放電效果,所需的電流相較以往越來越大。為此,傳統上是將電路保護元件中的單個熱敏元件(即兩片導電層加上中間疊設的正溫度係數材料層)的尺寸設計為更大,藉此增加導電層的表面積以降低整體電阻。然而,電路保護元件尺寸過大將會佔去過多空間,在電子產品追求微型化的趨勢下將使得應用受到限制。此外,即使成功將電路保護元件設計為更小且維持低電阻值,電路保護元件又會面臨熱穩定性的問題,即電路保護元件所產生的熱容易累積而無法向外消散,導致電路保護元件無法提升維持電流(Hold Current;I hold),甚至電路保護元件觸發時會膨脹而產生過大的熱應力,並且如上述造成電阻回復性或電阻再現性不佳的問題,因此電路保護元件在應用上受到限制。 Furthermore, the development of electronic products is advancing by leaps and bounds nowadays. In order to achieve fast charging and discharging effects, the products to be protected by circuits (such as batteries) require more and more current than before. For this reason, traditionally, the size of a single heat-sensitive element in a circuit protection element (that is, two conductive layers plus a positive temperature coefficient material layer stacked in the middle) is designed to be larger, thereby increasing the surface area of the conductive layer to reduce overall resistance. However, excessive size of circuit protection components will take up too much space, and the application will be limited under the trend of miniaturization of electronic products. In addition, even if the circuit protection element is successfully designed to be smaller and maintain a low resistance value, the circuit protection element will face the problem of thermal stability, that is, the heat generated by the circuit protection element is easy to accumulate and cannot be dissipated outward, resulting in the circuit protection element It is impossible to increase the holding current (Hold Current; I hold ), and even when the circuit protection element is triggered, it will expand and cause excessive thermal stress, and cause the problem of poor resistance recovery or resistance reproducibility as mentioned above, so the circuit protection element is used in the application restricted.
顯然,微型化電路保護元件是未來的趨勢,但微型化電路保護元件面臨上述諸多問題。有鑑於此,習知的電路保護元件亟需改良以解決上述關於電阻回復性不佳、低電阻值及熱穩定結構的問題。Obviously, miniaturized circuit protection components are the future trend, but miniaturized circuit protection components face many of the above-mentioned problems. In view of this, the conventional circuit protection devices need to be improved to solve the above-mentioned problems of poor resistance recovery, low resistance value and thermal stability structure.
本創作將至少兩個熱敏元件並聯,使得電路保護元件在一定尺寸下能具有較低的電阻值,以增加電流通過量。換句話說,前述並聯結構意味著電路保護元件可設計為尺寸較小同時保持低電阻值特性。此外,在尺寸縮小及/或電流量增大的情況下,電路保護元件的電性及結構特性極易受熱能影響。基於熱敏元件並聯可能產生的設計問題,本創作更針對複數個不同的部件進行改良,以增加電路保護元件的熱穩定性:其一,在上下內電極(下文稱第一電極層及第二電極層)的下方及上方增設熱膨脹係數比正溫度係數(PTC)材料層小許多的上絕緣層及下絕緣層,藉此增加電路保護元件的結構強度,以解決電路保護元件因熱膨脹而造成的電阻再現性不佳的問題;其二,增設外電極,調整其表面積及位置和延伸長度以增加其暴露於環境的表面積,藉此提升電路保護元件的散熱速率,並進而提升電路保護元件的維持電流(Hold Current,I hold);其三,於電路保護元件的同一側增設複數個缺口,分散熱膨脹的應力影響;其四,在電路保護元件的外圍進行封裝,除了隔絕環境因子的影響外,更進一步穩固電路保護元件的整體結構。 In this invention, at least two heat-sensitive elements are connected in parallel, so that the circuit protection element can have a lower resistance value under a certain size, so as to increase the current passing capacity. In other words, the aforementioned parallel structure means that the circuit protection element can be designed to be smaller in size while maintaining low resistance value characteristics. In addition, the electrical and structural characteristics of circuit protection components are highly susceptible to thermal energy as the size shrinks and/or the amount of current increases. Based on the possible design problems caused by the parallel connection of heat-sensitive elements, this creation has improved a number of different components to increase the thermal stability of the circuit protection element: First, the upper and lower inner electrodes (hereinafter referred to as the first electrode layer and the second electrode layer) The upper and lower insulating layers with a coefficient of thermal expansion much smaller than that of the positive temperature coefficient (PTC) material layer are added below and above the electrode layer, thereby increasing the structural strength of the circuit protection component and solving the problem caused by thermal expansion of the circuit protection component. The problem of poor resistance reproducibility; secondly, adding an external electrode, adjusting its surface area, position and extension length to increase its surface area exposed to the environment, thereby improving the heat dissipation rate of the circuit protection component, and thereby improving the maintenance of the circuit protection component Current (Hold Current, I hold ); third, add a plurality of gaps on the same side of the circuit protection element to disperse the stress of thermal expansion; fourth, package the circuit protection element on the periphery, in addition to isolating the influence of environmental factors, Further stabilize the overall structure of the circuit protection element.
本創作之一實施態樣為一種電路保護元件,具有上表面、相對於上表面之下表面,及連接上表面及下表面的周壁。電路保護元件包含第一熱敏元件、第二熱敏元件、絕緣材料多層結構、第一電極層及第二電極層以及第一外電極。第一熱敏元件包含第一上導電層、第一下導電層,以及疊設於第一上導電層及第一下導電層之間的第一正溫度係數(Positive Temperature Coefficient,PTC)材料層。第二熱敏元件包含第二上導電層、第二下導電層,以及疊設於第二上導電層及第二下導電層之間的第二正溫度係數材料層。絕緣材料多層結構具有上絕緣層、中間絕緣層及下絕緣層。上絕緣層延伸超出第一上導電層,藉此完全覆蓋第一上導電層及覆蓋部分第一正溫度係數材料層。中間絕緣層疊設於第一下導電層及第二上導電層之間,連接第一熱敏元件及第二熱敏元件。下絕緣層延伸超出第二下導電層,藉此完全覆蓋第二下導電層及覆蓋部分之第二正溫度係數材料層。第一電極層及第二電極層分別貼附於上絕緣層及下絕緣層,且第一電極層與第一上導電層及第二上導電層電性連接,而第二電極層與第一下導電層及第二下導電層電性連接。第一外電極設置於第一電極層上,且平行於第一電極層沿第一水平方向延伸超出周壁。One embodiment of the invention is a circuit protection element, which has an upper surface, a lower surface opposite to the upper surface, and a peripheral wall connecting the upper surface and the lower surface. The circuit protection element includes a first heat-sensitive element, a second heat-sensitive element, an insulating material multilayer structure, a first electrode layer, a second electrode layer and a first external electrode. The first thermal element includes a first upper conductive layer, a first lower conductive layer, and a first positive temperature coefficient (Positive Temperature Coefficient, PTC) material layer stacked between the first upper conductive layer and the first lower conductive layer . The second thermal element includes a second upper conductive layer, a second lower conductive layer, and a second positive temperature coefficient material layer stacked between the second upper conductive layer and the second lower conductive layer. The insulating material multilayer structure has an upper insulating layer, a middle insulating layer and a lower insulating layer. The upper insulating layer extends beyond the first upper conductive layer, thereby completely covering the first upper conductive layer and covering part of the first positive temperature coefficient material layer. The intermediate insulating layer is stacked between the first lower conductive layer and the second upper conductive layer, and is connected to the first thermal element and the second thermal element. The lower insulating layer extends beyond the second lower conductive layer, thereby completely covering the second lower conductive layer and covering part of the second positive temperature coefficient material layer. The first electrode layer and the second electrode layer are attached to the upper insulating layer and the lower insulating layer respectively, and the first electrode layer is electrically connected to the first upper conductive layer and the second upper conductive layer, and the second electrode layer is connected to the first The lower conductive layer and the second lower conductive layer are electrically connected. The first external electrode is disposed on the first electrode layer and extends beyond the peripheral wall along a first horizontal direction parallel to the first electrode layer.
在一實施例中,電路保護元件更包含右缺口及左缺口。上絕緣層貼附於第一電極層及第一上導電層之間,使得第一電極層與第一上導電層間隔一距離,且第一電極層及第一上導電層彼此平行延伸至右缺口,透過右缺口電性連接。In one embodiment, the circuit protection element further includes a right notch and a left notch. The upper insulating layer is attached between the first electrode layer and the first upper conductive layer, so that the first electrode layer and the first upper conductive layer are separated by a distance, and the first electrode layer and the first upper conductive layer extend parallel to each other to the right. The notch is electrically connected through the right notch.
在一實施例中,此距離為0.02 mm至0.06 mm。In one embodiment, the distance is 0.02 mm to 0.06 mm.
在一實施例中,上絕緣層覆蓋部分第一正溫度係數材料層之處的正上方未覆蓋第一電極層而形成開口,使得第一電極層不會延伸至左缺口,從而第一電極層未與左缺口電性連接。In one embodiment, an opening is formed directly above where the upper insulating layer covers part of the first positive temperature coefficient material layer without covering the first electrode layer, so that the first electrode layer will not extend to the left gap, so that the first electrode layer Not electrically connected to the left notch.
在一實施例中,電路保護元件更包含絕緣材料,絕緣材料填入開口中。In one embodiment, the circuit protection element further includes an insulating material, and the insulating material is filled into the opening.
在一實施例中,右缺口具有右導通件,使得第一電極層、第一上導電層及第二上導電層電性連接,而左缺口具有左導通件,使得第二電極層、第一下導電層及第二下導電層電性連接。In one embodiment, the right notch has a right conduction member, so that the first electrode layer, the first upper conductive layer and the second upper conductive layer are electrically connected, and the left notch has a left conduction member, so that the second electrode layer, the first The lower conductive layer and the second lower conductive layer are electrically connected.
在一實施例中,電路保護元件更包含結構強化金屬膜,結構強化金屬膜覆蓋第一電極層之表面、第二電極層之表面、右導通件之表面及左導通件之表面,使得第一電極層、第二電極層、右導通件及左導通件與環境氣體隔絕。In one embodiment, the circuit protection device further includes a structure-strengthening metal film, and the structure-strengthening metal film covers the surface of the first electrode layer, the surface of the second electrode layer, the surface of the right conducting element, and the surface of the left conducting element, so that the first The electrode layer, the second electrode layer, the right conducting element and the left conducting element are isolated from ambient gas.
在一實施例中,周壁具有左側壁、右側壁、前側壁及後側壁 ,左側壁與右側壁相對,而前側壁與後側壁相對,其中左缺口位於左側壁,而右缺口位於右側壁。In one embodiment, the peripheral wall has a left side wall, a right side wall, a front side wall and a rear side wall, the left side wall is opposite to the right side wall, and the front side wall is opposite to the rear side wall, wherein the left notch is located on the left side wall, and the right notch is located on the right side wall.
在一實施例中,第一外電極沿第一水平方向延伸超出右側壁。In one embodiment, the first external electrode extends beyond the right side wall along the first horizontal direction.
在一實施例中,電路保護元件平行第一水平方向具有第一長度,而第一外電極自右側壁起算,具有超出右側壁的第二長度,且以第一長度及第二長度之總和為100%計,第二長度佔31%至53%。In one embodiment, the circuit protection element has a first length parallel to the first horizontal direction, and the first external electrode is counted from the right side wall and has a second length beyond the right side wall, and the sum of the first length and the second length is On a 100% basis, the second length accounts for 31% to 53%.
在一實施例中,第二長度為4 mm至 8 mm。In one embodiment, the second length is 4 mm to 8 mm.
在一實施例中,電路保護元件的上表面具有電路保護元件上表面積,而第一外電極具有第一外電極上表面積,且第一外電極上表面積除以電路保護元件上表面積的比值為1.37至1.64。In one embodiment, the upper surface of the circuit protection element has an upper surface area of the circuit protection element, and the first external electrode has an upper surface area of the first outer electrode, and the ratio of the upper surface area of the first outer electrode divided by the upper surface area of the circuit protection element is 1.37 to 1.64 .
在一實施例中,電路保護元件更包含第二外電極設置在覆蓋結構強化金屬膜的第二電極層上,其中第一外電極平行於第一電極層沿第二水平方向延伸超出前側壁,而第二外電極平行於第一外電極延伸超出後側壁。In one embodiment, the circuit protection device further includes a second external electrode disposed on the second electrode layer covering the structural strengthening metal film, wherein the first external electrode extends beyond the front sidewall in a second horizontal direction parallel to the first electrode layer, And the second external electrode extends beyond the rear sidewall parallel to the first external electrode.
在一實施例中,電路保護元件更包含第二外電極,設置在覆蓋結構強化金屬膜的第二電極層上,且沿相反於第一水平方向延伸超出左側壁。In one embodiment, the circuit protection device further includes a second external electrode, disposed on the second electrode layer covering the structural strengthening metal film, and extending beyond the left sidewall along a direction opposite to the first horizontal direction.
在一實施例中,電路保護元件更包含封裝帶。封裝帶以電路保護元件為軸心沿上表面、前側壁、下表面、後側壁的方向進行捲繞,使得電路保護元件僅露出右側壁、左側壁、部分之第一外電極及部分之第二外電極。In one embodiment, the circuit protection device further includes a packaging tape. The packaging tape is wound around the upper surface, the front side wall, the lower surface and the rear side wall with the circuit protection component as the axis, so that the circuit protection component only exposes the right side wall, the left side wall, part of the first external electrode and part of the second electrode. external electrode.
在一實施例中,電路保護元件更包含絕緣框體。絕緣框體包覆電路保護元件,使得電路保護元件僅露出部分之第一外電極及部分之第二外電極。In one embodiment, the circuit protection element further includes an insulating frame. The insulating frame covers the circuit protection element, so that the circuit protection element only exposes part of the first external electrode and part of the second external electrode.
在一實施例中,電路保護元件更包含複數個右缺口及與此些右缺口相對的複數個左缺口,分別設置於周壁的右側壁及左側壁,其中第一外電極沿第一水平方向延伸超出右側壁。In one embodiment, the circuit protection element further includes a plurality of right notches and a plurality of left notches opposite to the right notches, respectively disposed on the right side wall and the left side wall of the peripheral wall, wherein the first external electrode extends along the first horizontal direction beyond the right side wall.
在一實施例中,電路保護元件更包含第二外電極,設置在第二電極層上,且平行於第二電極層沿相反於第一水平方向延伸超出左側壁。In one embodiment, the circuit protection device further includes a second external electrode disposed on the second electrode layer and extending beyond the left sidewall parallel to the second electrode layer along a direction opposite to the first horizontal direction.
在一實施例中,電路保護元件更包含封裝帶,封裝帶以電路保護元件為軸心捲繞,使得電路保護元件僅露出右側壁、左側壁、部分之第一外電極及部分之第二外電極。In one embodiment, the circuit protection component further includes a package tape, and the package tape is wound around the circuit protection component, so that the circuit protection component only exposes the right side wall, the left side wall, part of the first outer electrode and part of the second outer electrode. electrode.
在一實施例中,電路保護元件更包含絕緣框體,絕緣框體包覆電路保護元件,使得電路保護元件僅露出部分之第一外電極及部分之第二外電極。In one embodiment, the circuit protection element further includes an insulating frame, and the insulating frame covers the circuit protection element, so that the circuit protection element only exposes part of the first external electrode and part of the second external electrode.
讓本創作之上述和其他技術內容、特徵和優點能更明顯易懂,下文特舉出相關實施例,並配合所附圖式,作詳細說明如下。To make the above and other technical contents, features and advantages of this creation more obvious and easy to understand, the relevant embodiments are specifically listed below, together with the accompanying drawings, and are described in detail as follows.
請參照圖1至圖5,為本創作之第一實施態樣的立體圖、剖視圖、局部放大圖及俯視圖。在圖1中,電路保護元件100具有作為核心的PTC晶片結構。此PTC晶片結構具有左缺口62及右缺口61,並在上表面101設置第一外電極51而在下表面102設置第二外電極52。為了方便理解和說明,圖2將第一外電極51及第二外電極52拆開獨立於PTC晶片結構外。另外,圖式中的x、y、z軸係用於呈現空間中的方位,便於從各個視角闡述本創作。電路保護元件100具有上表面101、相對於上表面之下表面102及連接上表面101及下表面102的周壁103。周壁103具有左側壁S2、右側壁S1、前側壁S4及後側壁S3。左側壁S2與右側壁S1相對,而前側壁S4與後側壁S3相對。左缺口62位於左側壁S2,而右缺口61位於右側壁S1。為了增加電路保護元件的結構強度以避免觸發時膨脹導致有電阻回復性或電阻再現性不佳的問題,同時為了防止作為電連接之用的電極層(如第一電極層41及第二電極層42)和導通件(如右導通件63及左導通件64)的氧化,在上表面101、下表面102、左缺口62及右缺口61更覆蓋結構強化金屬膜80(例如:錫箔、鎳箔、鍍鎳銅箔,可藉由噴鍍或電鍍來形成)。Please refer to Fig. 1 to Fig. 5, which are perspective views, sectional views, partial enlarged views and top views of the first embodiment of the invention. In FIG. 1 , a
請參照圖3,為圖1沿AA線段下切的剖視圖。電路保護元件100包含第一熱敏元件10、第二熱敏元件20、絕緣材料多層結構30、第一電極層41、第二電極層42、左缺口62、右缺口61以及至少一外電極(例如:第一外電極51及/或第二外電極52)。第一電極層41透過右缺口61與第一熱敏元件10以及第二熱敏元件20電性連接,而第二電極層42透過左缺口62與第一熱敏元件10以及第二熱敏元件20電性連接。第一電極層41及第二電極層42可視為電路保護元件100的內電極。在一實施例中,電路保護元件100亦可不包括外電極51、52而製做成表面黏著型式(surface-mountable type),以直接焊接在電路板上,而與外部電路一起形成電流路徑。第一熱敏元件10包含第一上導電層12、第一下導電層13以及疊設於第一上導電層12及第一下導電層13之間的第一正溫度係數(Positive Temperature Coefficient,PTC)材料層11。第二熱敏元件20包含第二上導電層22、第二下導電層23以及疊設於第二上導電層22及第二下導電層23之間的第二正溫度係數材料層21。另外,電路保護元件具有第一長度L1,而外電極(如第一外電極51)自周壁103向外延伸第二長度L2且其本身具有第三長度L3。應注意到的是,電路保護元件100包含至少兩個具有正溫度係數材料層的熱敏元件(即第一熱敏元件10及第二熱敏元件20),且這兩個熱敏元件是採並聯結構設計。相較於相同尺寸但僅具單一熱敏元件的傳統電路保護元件,電路保護元件100具有至少兩個並聯的熱敏元件,可有效增加電極層體的表面積而降低電阻。換句話說,在尺寸縮小的情況下,電路保護元件100亦可具有較低的電阻值而增加電流通過量。此外,為使前述並聯結構於高溫環境下更加穩定,本創作更針對不同的部件進行改良。細節請繼續參照下文。Please refer to FIG. 3 , which is a sectional view cut down along line AA in FIG. 1 . The
請繼續參照圖3並搭配圖4的局部放大圖。絕緣材料多層結構30具有上絕緣層31、中間絕緣層32及下絕緣層33。上絕緣層31延伸超出第一上導電層12,藉此完全覆蓋第一上導電層12及覆蓋部分第一正溫度係數材料層11。中間絕緣層32疊設於第一下導電層13及第二上導電層22之間,連接第一熱敏元件10及第二熱敏元件20。下絕緣層33延伸超出第二下導電層23,藉此完全覆蓋第二下導電層23及覆蓋部分之第二正溫度係數材料層21。在一實施例中,絕緣材料多層結構30可選自由環氧樹脂玻纖複合材、環氧樹脂、聚酯樹脂、聚醯胺樹脂、酚醛樹脂、聚胺樹脂、聚氰酸酯樹脂、馬來醯亞胺樹脂、聚烯烴樹脂、二亞苯基醚樹脂、光敏樹脂及其組合所組成的群組,該些材料的熱膨脹係數均遠小於正溫度係數材料層11、21的熱膨脹係數。另外,為了改善黏著特性、結構強度或其他物理性質,中間絕緣層32可選用前述樹脂外,且可進一步包含無機功能性微米或奈米顆粒。Please continue to refer to Figure 3 with the partial enlarged view of Figure 4. The insulating
更具體而言,上絕緣層31貼附於第一電極層41及第一上導電層12之間且與此兩者形成物理接觸,使得第一電極層41與第一上導電層12間隔一距離D,且第一電極層41及第一上導電層12彼此平行沿y軸向右延伸至右缺口61,透過右缺口61電性連接。此外,上絕緣層31覆蓋部分第一正溫度係數材料層11之處的正上方(即沿z軸方向)未覆蓋第一電極層41而形成開口O,使得第一電極層41不會延伸至左缺口62,從而第一電極層41未與左缺口62電性連接。另外,在第一電極層41所處的平面(即xy平面)上,並無金屬層體從左缺口62延伸覆蓋至上絕緣層31。也就是說,在第一電極層41所處的平面上並無另一端點的電極層存在,故第一外電極51於xy平面上的焊接位置即使偏移過大也不易與另一端點的電極層連接而造成短路。在一實施例中,電路保護元件100更包含絕緣材料70,例如俗稱綠漆的防焊油墨。絕緣材料70填入開口O中,藉此進一步增加第一電極層41與左缺口62之間的絕緣性,且降低可焊接性以避免外電極焊於其上。下絕緣層33貼附於第二電極層42及第二下導電層23之間且與此兩者形成物理接觸。下絕緣層33覆蓋部分第二正溫度係數材料層21之處的正下方亦有開口O,其結構與上絕緣層31上方的開口O設計相同,在此不多做贊述。More specifically, the upper insulating
在本實施例中,上絕緣層31與正溫度係數材料層11之間的熱膨脹係數差異大,即上絕緣層31的熱膨脹係數比正溫度係數材料層11的熱膨脹係數小許多,因此增加上絕緣層31可以抑制第一正溫度係數材料層11的膨脹,增加過電路保護元件100的結構強度,以解決元件觸發時膨脹導致有電阻再現性不佳的問題。另外,本創作更將導體層一分為二(即第一上導電層12及第一電極層41)並連接至同側的右缺口61,藉此進一步增加單個熱敏元件中的導體表面積。詳細而言,當第一電極層41透過上絕緣層31與第一上導電層12隔開時,第一電極層41的下表面就不會與第一上導電層12的上表面共平面,進而增加導體表面積的大小。至於下絕緣層33、第二下導電層23及第二電極層42,具有與前述上絕緣層31、第一上導電層12及第一電極層41相同的相對結構設計,在此不多做贊述。上絕緣層31及下絕緣層33由上方及下方將兩個熱敏元件(即第一熱敏元件10及第二熱敏元件20)夾在中間,限制電路保護元件100熱膨脹的程度且避免變形。須特別提及的是,上絕緣層31及下絕緣層33的厚度不會太厚,所以不會佔用電路保護元件100過多空間,空間佔用率低。舉例來說,距離D為約0.02 mm至0.06 mm。在一實施例中,距離D為0.02 mm、0.03 mm、0.04 mm、0.05 mm或0.06 mm。另外,沿y軸方向第一電極層41具有第四長度L4,而第一上導電層12具有第五長度L5。第四長度L4及第五長度L5皆大於電路保護元件100的長度(即第一長度L1)的一半,以獲得較低的電阻值。一般而言,為避免過多金屬表面暴露於外,第一電極層41的尺寸會小於第一上導電層12。也就是說,第四長度L4小於第五長度L5。在一實施例中,前述第一長度L1為約7 mm至 9 mm,例如:7 mm、7.3 mm、7.9 m、8.2 mm、8.7 mm或9 mm。根據本創作,L4也可以大於L5,但不宜距離左缺口62太近,以避免有電弧產生的疑慮,甚至造成短路。由以上可知,在空間佔用率低的情況下,上絕緣層31及下絕緣層33可提高電極導體的表面積,又可增加過電路保護元件100的結構強度。In this embodiment, the thermal expansion coefficient difference between the upper insulating
繼續參照圖3,第一電極層41及第二電極層42分別貼附於上絕緣層31及下絕緣層33,且第一電極層41與第一上導電層12及第二上導電層22電性連接,而第二電極層42與第一下導電層13及第二下導電層23電性連接。更詳細而言,右缺口61具有右導通件63,使得第一電極層41、第一上導電層12及第二上導電層22藉由右導通件63形成電性連接,而左缺口62具有左導通件64,使得第二電極層42、第一下導電層13及第二下導電層23藉由左導通件64形成電性連接。另如前述所提,電路保護元件100可視需求披覆結構強化金屬膜80。結構強化金屬膜80覆蓋第一電極層41之表面、第二電極層42之表面、右導通件63之表面及左導通件64之表面,使得第一電極層41、第二電極層42、右導通件63及左導通件64與環境氣體隔絕。結構強化金屬膜80的熱膨脹係數遠小於正溫度係數材料層11、21的熱膨脹係數,因此可增加過電路保護元件100的結構強度。除此之外,當金屬電極(即第一電極層41和第二電極層42)的表面容易氧化時,可將其外露部分披覆不易氧化但導電性良好的結構強化金屬膜80。可再參照圖2,第一電極層41的上表面覆蓋結構強化金屬膜80,使得電路保護元件100的部分上表面101覆蓋結構強化金屬膜80,其餘部分的上表面101則為絕緣材料70。而在右側壁S1,右缺口61上的右導通件63的表面也全部覆蓋結構強化金屬膜80。另外,結構強化金屬膜80的材料可與焊料具有相同成分,以利於焊接其他元件。舉例來說,結構強化金屬膜80可為含錫金屬薄膜,有助於增加其與含錫合金的焊料之間的附著力。至於下表面102及左缺口62與前述上表面101及右缺口61有相同設計,在此不多做贊述。Continuing to refer to FIG. 3 , the
請參照圖5和圖2,為電路保護元件100的俯視圖。為便於理解,下文主要是以第一外電極51的結構設計進行說明,其中第二外電極52可具有同於第一外電極51的結構設計。第一外電極51設置於第一電極層41上,且平行於第一電極層41沿第一水平方向延伸超出周壁103。更具體而言,第一外電極51可沿y軸,朝遠離左側壁S2的第一水平方向延伸超出右側壁S1。所以,右側壁S1及其上的右缺口61會被覆蓋在第一外電極51的下方(如圖5中虛線所示)。第一水平方向實質上與y軸平行。電路保護元件100平行第一水平方向具有第一長度L1,而第一外電極51自右側壁S1起算,具有超出右側壁S1的第二長度L2(可搭配參照圖2及圖3)。在本創作中,以第一長度L1及第二長度L2之總和為100%計,第二長度L2佔31%至53%。前述第二長度L2所佔比率亦可稱為外電極延伸率。在一實施例中,外電極延伸率可為31%、33%、36%、38%、42%、46%、47%、49%或53%。舉例而言,當第一長度L1為8.2 mm而第二長度L2為5 mm時,可算得外電極延伸率為約38%。透過額外的外電極延伸長度,使得第一外電極51暴露於環境中的表面積增大,可有效提升散熱速率,並進而提升電路保護元件100的維持電流(Hold Current,I
hold)。前述外電極延伸率的改良可應用於不同型號尺寸的電路保護元件,但應注意第二長度L2的延伸並非無所限制。當外電極延伸率低於31%時,會使得第一外電極51過短而難以將其點焊至外部元件上。當外電極延伸率大於53%時,會使得第一外電極51過長而容易彎折及變形。再者,外電極延伸率大於53%將使電路保護元件100的整體尺寸過長,佔用過多空間。在一較佳實施例中,為進一步提升點焊良率且加快散熱速率,外電極延伸率調整為大於47%,即介於47%至53%之間。至於外電極材料的選擇上,第一外電極51及第二外電極52可為銅片、鎳片或鋼片。鎳片因材質較軟,故適合用於點焊,而不適合用於回流焊(reflow)的接合方式。銅片的結構強度較鎳片佳,故適合用於回流焊的製程中。
Please refer to FIG. 5 and FIG. 2 , which are top views of the
在圖5中,電路保護元件100更具有第一寬度W1,而第一外電極51及第二外電極52各具有第二寬度W2。在一實施例中,第一寬度W1為4 mm至 6 mm,例如:4 mm、4.3 mm、4.5 mm、5.3 mm、5.7 mm或6 mm。第二寬度W2較佳為等於或小於第一寬度W1,以利於組裝製程的進行。如前述所提,第一外電極51的延伸長度(第二長度L2)有益於散熱。除此之外,第一外電極51其上表面積亦可相應地進行調整。具體而言,第一長度L1乘上第一寬度W1可得電路保護元件100的電路保護元件上表面積,而第三長度L3(參照圖3)乘上第二寬度W2可得第一外電極51的第一外電極上表面積。在一實施例中,第三長度L3為約9.25 mm 至12.25 mm,例如9.25 mm、10.25 mm、11.25 mm或12.25mm。為了達到良好的散熱效果,本創作將第一外電極51的上表面積進行調整,故第一外電極上表面積除以電路保護元件上表面積的比值較佳為1.37至1.64。以其中一種型號尺寸的電路保護元件100為例,電路保護元件100具有第一長度L1為8.2 mm及第一寬度W1為5.3 mm。為使散熱情形獲得有效的改善,可將第一外電極51的第三長度L3設定為12.25 mm,而其第二寬度W2則選定為與第一寬度W1相同的5.3 mm。由前述可算得第一外電極上表面積為約64.93 mm
2,而電路保護元件上表面積為約43.46 mm
2,兩者比值為約1.49。也就是說,當第一外電極51的上表面積大於電路保護元件100的上表面積且落於1.37至1.64的比值區間時,第一外電極51可有效提升散熱速率,並進而提升電路保護元件100的維持電流(Hold Current,I
hold)。另外,在一實施例中,也可將前述上表面積為64.93 mm
2的第一外電極51朝遠離右側壁S1的方向設置,使第二長度L2為8 mm,藉此具有最佳的外電極延伸率。換句話說,本創作除了針對第一外電極51的表面積進行調整外,更將其設置為遠離周壁103。如此,後續若有封裝製程的需求而覆蓋部分第一外電極51時,第一外電極51仍有相當程度的第一外電極上表面積暴露於環境中,從而有效提升散熱速率,藉此提升電路保護元件100的維持電流。在一實施例中,本創作選用不同尺寸的電路保護元件100,並使第一外電極上表面積除以電路保護元件上表面積的比值為1.37、1.43、1.49、1.55、1.58、1.61或1.64。在一最佳實施例中,第一外電極上表面積除以電路保護元件上表面積的比值為1.49至1.64,此時電路保護元件100具有較大的維持電流。
In FIG. 5 , the
請接著參照圖6,為本創作之第二實施態樣的的電路保護元件200。圖6與圖5差異在於第一外電極51及第二外電極52的延伸方向不同。在圖5中,電路保護元件100的第一外電極51沿第一水平方向延伸超出右側壁S1,並設置在覆蓋結構強化金屬膜80的第一電極層41上。第二外電極52沿相反於第一水平方向延伸超出左側壁S2,並設置在覆蓋結構強化金屬膜80的第二電極層42上。而在圖6中,電路保護元件200的第一外電極51平行於第一電極層41沿第二水平方向延伸超出前側壁S4,而第二外電極52平行於第一外電極51延伸超出後側壁S3。也就是說,第一外電極51及第二外電極52垂直於電路保護元件200的長邊而向外延伸。前述第一水平方向實質上平行於y軸,而第二水平方向實質上平行於x軸;意即,在xy平面上,第一水平方向與第二水平方向實質上彼此垂直。據此,第一外電極51及第二外電極52可視需求有不同的設計方式。Please refer to FIG. 6 , which is a
請繼續參照圖7,為本創作之第三實施態樣的電路保護元件300。圖7中與第一實施態樣的相同部分將沿用相同的元件符號,在此不多贊述。圖7與圖2差異在於缺口的數量,且缺口設置在特定位置。具體而言,電路保護元件300更包含複數個右缺口(如第一右缺口65及第二右缺口66)及與此些右缺口相對的複數個左缺口(如第一左缺口67及第二左缺口68),分別設置於周壁103的右側壁S1及左側壁S2。在同一側壁增加缺口數量可分散熱膨脹時的應力影響,使電路保護元件300不易破裂。而在左右兩側(右側壁S1及左側壁S2)對稱的情況下,應力分散的情況將更為顯著。在一實施例中,第一右缺口65及第二右缺口66為半圓柱型的凹陷空間,且具有相同的缺口半徑。而在另一實施例中,為了使結構更為對稱,第一右缺口65及第二右缺口66可對稱地設置在右側壁S1,意即右側壁S1被均分為三面表面積大致相等的矩形側壁。前述情形在左側壁S2亦可做相同設計。此外,第一外電極51可沿第一水平方向延伸超出右側壁S1,並設置在覆蓋結構強化金屬膜80的第一電極層41上,而第二外電極52可沿相反於第一水平方向延伸超出左側壁S2,並設置在覆蓋結構強化金屬膜80的第二電極層42上。在另一實施例中,第一外電極51可沿第二水平方向延伸超出前側壁S4,而第二外電極52平行於第一外電極51延伸超出後側壁S3。換句話說,圖7中的第一外電極51及第二外電極52的設置方向可與圖5或圖6相同。Please continue to refer to FIG. 7 , which is a
為使本創作更加容易理解,請繼續參照圖8所示意的本創作第一實施例電路保護元件100 (參見圖1)的製程。製程大致上可分為步驟1至步驟7,詳見下文。In order to make the present invention easier to understand, please continue to refer to FIG. 8 which shows the manufacturing process of the circuit protection element 100 (see FIG. 1 ) according to the first embodiment of the present invention. The process can be roughly divided into
步驟1:提供第一上導電層板材120、第一下導電層板材130及第一正溫度係數材料層板材110,並將第一正溫度係數材料層板材110熱壓合於第一上導電層板材120及第一下導電層板材130之間。接著。再對第一上導電層板材120及第一下導電層板材130進行蝕刻,使得第一上導電層板材120及第一下導電層板材130暴露第一正溫度係數材料層板材110並形成複數個第一上導電層12及複數個第一下導電層13。Step 1: Provide the first upper
步驟2:重複步驟1的操作而獲得第二正溫度係數材料層板材210、複數個第二上導電層22及複數個第二下導電層23。依序提供第一電極層板材410及上絕緣層板材310位於此些第一上導電層12的上方;提供中絕緣層板材320介於此些第一下導電層13及此些第二上導電層22的之間;以及提供下絕緣層板材330及第二電極層板材420位於此些第二下導電層23的下方。Step 2: Repeat the operation of
步驟3:依步驟2的疊設方式進行熱壓合,獲得具有雙層正溫度係數材料層板材的疊層結構。Step 3: Carrying out thermocompression according to the stacking method in
步驟4:將步驟3的疊層結構鑽孔並形成複數個導通孔H。鑽孔方式可採用機械鑽孔、雷射鑽孔或其他鑽孔技術。在鑽孔後,進行電鍍以形成導通孔H。導通孔H不限於電鍍通孔(Plating Through Hole,PTH),只要具有導電連接特性即可,例如導電柱或其他類似結構。據此,此些導通孔H中形成複數個右導通件63及複數個左導通件64。同時,在此些導通孔H之間更形成複數個上絕緣層31、複數個第一正溫度係數材料層11、複數個中間絕緣層32、複數個第二正溫度係數材料層21及複數個下絕緣層33。Step 4: Drilling the stacked structure in
步驟5:對步驟4中經鑽孔的第一電極層板材410及第二電極層板材420進行蝕刻,藉此形成複數個開口O暴露此些上絕緣層31及此些下絕緣層33,同時複數個第一電極層41及複數個第二電極層42亦分別形成於其上。Step 5: Etching the first
步驟6:覆蓋結構強化金屬膜80於此些第一電極層41、此些第二電極層42、此些右導通件63及此些左導通件64的表面,藉此增加電路保護元件100的結構強度且避免導體電極的表面氧化。一實施例中,結構強化金屬膜80可為含錫薄膜,並可以噴鍍或電鍍的方式將結構強化金屬膜80披覆於此些第一電極層41、此些第二電極層42、此些右導通件63及此些左導通件64的表面。Step 6: Covering the structure strengthening
步驟7:沿著切割線d1-d1、切割線d2-d2、切割線d3-d3及切割線d4-d4進行切割,如圖所示意可切割出至少三個電路保護元件。Step 7: Carry out cutting along the cutting line d1-d1, cutting line d2-d2, cutting line d3-d3 and cutting line d4-d4, at least three circuit protection components can be cut out as shown in the figure.
另外,若為了再更加提升電路保護元件的絕緣性及結構穩定性,本創作亦可依需求而再執行一封裝步驟,以使電路保護元件具有封裝結構,如圖9至圖11所示。In addition, in order to further improve the insulation and structural stability of the circuit protection component, the present invention can also perform a packaging step according to requirements, so that the circuit protection component has a package structure, as shown in FIGS. 9 to 11 .
圖9及圖10顯示本創作的第四實施態樣的電路保護元件400。在圖9中,電路保護元件400更包含封裝帶90。封裝帶90可為高分子聚合物所形成的薄膜膠帶。舉例來說,封裝帶90係由聚合物基材及黏著劑所組成。前述聚合物基材可為聚酯薄膜,而黏著劑可為矽膠。在圖10中,封裝帶90以電路保護元件400為軸心沿上表面101、前側壁S4、下表面102、後側壁S3的方向進行捲繞,使得電路保護元件400僅露出右側壁S1、左側壁S2、部分之第一外電極51及部分之第二外電極52。需注意的是,圖10上方為電路保護元件400的拆解圖,僅將第一外電極51及第二外電極52獨立抽出。由此可知,封裝帶90並未覆蓋至右側壁S1及左側壁S2。此外,封裝帶90可以沿y軸方向稍微超出右側壁S1及左側壁S2,亦可以與右側壁S1及左側壁S2齊平。在封裝帶90沿y軸方向超出周壁103的情形下,第二長度L2是沿y軸由封裝帶90起算 (如圖9所示)。透過封裝帶90的設置,電路保護元件400可具有更佳的絕緣性及結構穩定性。除此之外,封裝帶90可為透明材質或不透明材質。採用透明材質的封裝帶90有利於瑕疵檢測,得以用肉眼或感光元件檢查封裝帶90內的電路保護元件400是否有缺陷,藉此方便品質上的控管並提升產品良率。封裝帶90以外的元件皆可與前述第一實施態樣、第二實施態樣及第三實施態樣相同,在此不多做贊述。9 and 10 show a
圖11顯示本創作的第五實施態樣的電路保護元件500。與圖10不同的是,圖11的電路保護元件500不是選用封裝帶90,而選用絕緣框體91。絕緣框體91可由固化後的熱固性高分子聚合物所組成。透過射出成型或其他塗覆製程,可將具有流動性的熱固性高分子聚合物將電路保護元件500包裹於其中,再行固化。據此,絕緣框體91包覆電路保護元件500,使得電路保護元件500僅露出部分之第一外電極51及部分之第二外電極52。絕緣框體91以外的元件皆可與前述第一實施態樣、第二實施態樣、第三實施態樣及第四實施態樣相同,在此不多做贊述。FIG. 11 shows a
簡言之,在本創作中,藉由將結構強化金屬膜80披覆至電路保護元件100表面,及設置上絕緣層31和下絕緣層33於電路保護元件100內,以增加電路保護元件的結構強度,從而避免電路保護元件100觸發時膨脹所造成的電阻回復性或電阻再現性不佳的問題。此外,本創作調整外電極51、52的表面積及位置或延伸長度以增加其暴露於環境的表面積,藉此提升電路保護元件的散熱速率,並進而提升電路保護元件的維持電流(Hold Current,I
hold),使得電路保護元件可應用於需承載更高額定電流的電子產品應用中。又,本創作於電路保護元件300的兩側分別設置複數個右缺口65、66和複數個左缺口67、68,可分散熱膨脹的應力影響,避免元件變形產生的電阻再現性不佳問題。進一步的,本創作在電路保護元件的外圍以封裝帶90或絕緣框體91進行封裝,除了隔絕環境因子的影響外,更進一步穩固電路保護元件的整體結構。
In short, in this creation, by coating the structure strengthening
本創作之技術內容及技術特點已揭示如上,然而本領域具有通常知識之技術人士仍可能基於本創作之教示及揭示而作種種不背離本創作精神之替換及修飾。 因此,本創作之保護範圍應不限於實施例所揭示者,而應包括各種不背離本創作之替換及修飾,並為以下之申請專利範圍所涵蓋。The technical content and technical features of this creation have been disclosed above, but those skilled in the art may still make various substitutions and modifications based on the teachings and disclosures of this creation without departing from the spirit of this creation. Therefore, the scope of protection of this creation should not be limited to those disclosed in the embodiments, but should include various replacements and modifications that do not deviate from this creation, and are covered by the scope of the following patent applications.
1、2、3、4、5、6、7:步驟 10:第一熱敏元件 11:第一正溫度係數材料層 12:第一上導電層 13:第一下導電層 20:第二熱敏元件 21:第二正溫度係數材料層 22:第二上導電層 23:第二下導電層 30:絕緣材料多層結構 31:上絕緣層 32:中間絕緣層 33:下絕緣層 41:第一電極層 42:第二電極層 51:第一外電極 52:第二外電極 61:右缺口 62:左缺口 63:右導通件 64:左導通件 65:第一右缺口 66:第二右缺口 67:第一左缺口 68:第二左缺口 70:絕緣材料 80:結構強化金屬膜 90:封裝帶 91:絕緣框體 100、200、300、400、500:電路保護元件 101:上表面 102:下表面 103:周壁 110:第一正溫度係數材料層板材 120:第一上導電層板材 130:第一下導電層板材 210:第二正溫度係數材料層板材 310:上絕緣層板材 320:中絕緣層板材 330:下絕緣層板材 410:第一電極層板材 420:第二電極層板材 d1、d2、d3、d4:切割線 D:距離 H:導通孔 L1:第一長度 L2:第二長度 L3:第三長度 L4:第四長度 L5:第五長度 O:開口 S1:右側壁 S2:左側壁 S3:後側壁 S4:前側壁 W1:第一寬度 W2:第二寬度 1, 2, 3, 4, 5, 6, 7: steps 10: The first thermal element 11: The first positive temperature coefficient material layer 12: The first upper conductive layer 13: The first lower conductive layer 20: The second thermal element 21: The second positive temperature coefficient material layer 22: The second upper conductive layer 23: The second lower conductive layer 30: Multi-layer structure of insulating material 31: upper insulating layer 32: Intermediate insulating layer 33: Lower insulating layer 41: The first electrode layer 42: Second electrode layer 51: The first outer electrode 52: Second external electrode 61: right gap 62: left gap 63: Right lead 64: Left lead 65: First Right Gap 66: Second Right Gap 67: First Left Gap 68: Second Left Gap 70: insulating material 80: Structural strengthening metal film 90: Encapsulation tape 91: Insulation frame 100, 200, 300, 400, 500: circuit protection components 101: upper surface 102: lower surface 103: Peripheral wall 110: The first positive temperature coefficient material layer plate 120: The first upper conductive layer plate 130: The first lower conductive layer plate 210: second positive temperature coefficient material layer plate 310: upper insulating layer sheet 320: middle insulating layer plate 330: lower insulating layer sheet 410: The first electrode layer plate 420: second electrode layer plate d1, d2, d3, d4: cutting lines D: distance H: via hole L1: first length L2: second length L3: third length L4: fourth length L5: fifth length O: open S1: right wall S2: left wall S3: Rear side wall S4: front side wall W1: first width W2: second width
圖1顯示本創作第一實施態樣之電路保護元件的立體圖; 圖2顯示圖1之電路保護元件的立體分解示意圖; 圖3顯示圖1之電路保護元件的剖視圖; 圖4顯示圖3之電路保護元件的剖視圖的局部放大圖; 圖5顯示圖1之電路保護元件的俯視圖; 圖6顯示本創作第二實施態樣之電路保護元件的俯視圖; 圖7顯示本創作第三實施態樣之電路保護元件的立體分解示意圖; 圖8顯示本創作的電路保護元件的製造流程; 圖9顯示本創作第四實施態樣之電路保護元件的剖視圖; 圖10顯示本創作第四實施態樣之電路保護元件的立體分解示意圖和組合示意圖;以及 圖11顯示本創作第五實施態樣之電路保護元件的立體分解示意圖和組合示意圖。 FIG. 1 shows a perspective view of a circuit protection element of the first embodiment of the present invention; FIG. 2 shows a three-dimensional exploded schematic diagram of the circuit protection component of FIG. 1; Fig. 3 shows a cross-sectional view of the circuit protection element of Fig. 1; Fig. 4 shows a partially enlarged view of the cross-sectional view of the circuit protection element of Fig. 3; Fig. 5 shows the top view of the circuit protection element of Fig. 1; Fig. 6 shows a top view of the circuit protection element of the second embodiment of the present invention; FIG. 7 shows a three-dimensional exploded schematic diagram of a circuit protection component of a third embodiment of the present invention; Fig. 8 shows the manufacturing process of the circuit protection element of the present invention; Fig. 9 shows a cross-sectional view of a circuit protection element of a fourth embodiment of the present invention; Fig. 10 shows a three-dimensional exploded schematic view and a combined schematic view of the circuit protection element of the fourth embodiment of the present invention; and FIG. 11 shows a three-dimensional exploded schematic view and an assembled schematic view of a circuit protection component according to a fifth embodiment of the present invention.
10:第一熱敏元件 10: The first thermal element
11:第一正溫度係數材料層 11: The first positive temperature coefficient material layer
12:第一上導電層 12: The first upper conductive layer
13:第一下導電層 13: The first lower conductive layer
20:第二熱敏元件 20: The second thermal element
21:第二正溫度係數材料層 21: The second positive temperature coefficient material layer
22:第二上導電層 22: The second upper conductive layer
23:第二下導電層 23: The second lower conductive layer
30:絕緣材料多層結構 30: Multi-layer structure of insulating material
31:上絕緣層 31: upper insulating layer
32:中間絕緣層 32: Intermediate insulating layer
33:下絕緣層 33: Lower insulating layer
41:第一電極層 41: The first electrode layer
42:第二電極層 42: Second electrode layer
51:第一外電極 51: The first outer electrode
52:第二外電極 52: Second external electrode
61:右缺口 61: right gap
62:左缺口 62: left gap
63:右導通件 63: Right lead
64:左導通件 64: Left lead
70:絕緣材料 70: insulating material
80:結構強化金屬膜 80: Structural strengthening metal film
100:電路保護元件 100: circuit protection components
L1:第一長度 L1: first length
L2:第二長度 L2: second length
L3:第三長度 L3: third length
O:開口 O: open
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