TWM625051U - Circuit structure for improving conductivity of dual in-line package components - Google Patents

Abstract

The present invention proposes a circuit structure for improving the conductivity of a dual in-line package element, comprising an insulating plate, a metal body and an electronic element; the insulating plate has a first surface and a second surface opposite to each other, at least the A first circuit is formed on the first surface, and at least one first opening is formed on the upper surface, which is connected downward at least to the second surface to form at least one through hole, thereby forming at least one plated through hole; the metal body has Opposite a third surface and a fourth surface, which are connected to the first surface, the third surface has at least one metal body through hole corresponding to the plated through hole; the electronic component has at least one pin, which is connected from the plated through hole. The metal body through hole is inserted into and electrically connected to the plated through hole corresponding to the third surface end; wherein, the wall surface area of the metal body through hole is larger than the wall surface area of the first circuit part of the plated through hole; the present invention can make the circuit structure Improves conductivity between DIP components and traces.

Description

Circuit structure for improving conductivity of dual in-line package components

The present invention relates to a circuit structure, especially a circuit structure for improving the conductivity of dual in-line package components.

In the conventional printed circuit board, if it is desired to improve the conductivity between the DIP components and the circuits, especially the conductivity between the DIP components and the circuits in the power supply, it is usually considered to increase the line width, Use multi-layer boards and/or increase the thickness of the power lines.

However, increasing the line width usually results in fewer accommodating lines on a printed circuit board of the same area, thereby causing a decrease in the density of the printed circuit board. The use of multi-layer boards will cause multi-layer circuit-dielectric-circuit line interference related to capacitance. In addition, if the thickness of the lines in the power supply portion is increased, at least one etching or film growth process needs to be added to change the general line thickness or the line thickness of the power supply portion.

An object of the present invention is to provide a circuit structure for improving the conductivity of a dual in-line package element, which includes an insulating plate, a metal body and an electronic element; the insulating plate has a first surface opposite to and a The second surface, at least a first circuit is formed on the first surface, and at least one first opening is opened on the upper surface, which is connected downward at least to the second surface to form at least one through hole, thereby forming at least one plated through hole a hole; the metal body has an opposite third surface and a fourth surface, which is connected to the first surface, the third surface has at least one metal body through hole corresponding to the plated through hole; the electronic component has at least one pins, which are inserted from the metal body through holes corresponding to the third surface end And the plated through hole is electrically connected; wherein, the wall surface area of the metal body through hole is larger than the wall surface area of the first circuit part of the plated through hole. Thus, the wall surface area of the metal body through hole, which is larger than the wall surface area of the first circuit portion of the plated through hole, enables the circuit structure to improve the conductivity between the DIP components and the circuit, and avoid the accumulation of the printed circuit board. The problem is that the degree of degradation is reduced, the circuit interference caused by the use of multi-layer boards, and the complex process of increasing the thickness of the power supply circuit.

In an embodiment of the present invention, the height of the metal body through hole is greater than 8.5 times the height of the first circuit portion of the plated through hole.

In an embodiment of the present invention, the width of the metal body through hole and the plated through hole is greater than or equal to the maximum width of the pin.

In an embodiment of the present invention, the pin at least reaches the second surface end corresponding to the plated through hole.

In an embodiment of the present invention, a solder material is formed between the pin and the metal body through hole and the plated through hole from the plated through hole corresponding to the second surface end in a wave soldering manner.

In an embodiment of the present invention, the material of the metal layer of the plated through hole, the first circuit and the metal body is copper.

One of the objectives of the present invention is to provide another circuit structure for improving the conductivity of DIP components, which includes an insulating plate, a metal body and an electronic component; the insulating plate has a first surface opposite to and an electronic component. a second surface, the first surface is provided with at least one first opening, which is communicated downward at least to the second surface to form at least one through hole, thereby forming at least one plated through hole; the metal body has an opposite first opening Three surfaces and a fourth surface are connected to the first surface, the third surface has at least one metal body through hole corresponding to the plated through hole; the electronic component has at least one connection The foot is inserted from the metal body through hole corresponding to the third surface end and is electrically connected to the plated through hole; wherein, the height of the metal body through hole is between 0.3 mm and 0.6 mm. Thus, the metal body through hole having a height of 0.3 mm to 0.6 mm greater than the height of the first circuit portion of the conventional plated through hole enables the circuit structure to improve the electrical conductivity between the DIP components and the circuit , and avoid problems such as the decrease in the integration of the printed circuit board, the circuit interference caused by the use of multi-layer boards, and the complicated process of increasing the thickness of the power supply circuit, and the existing process equipment can be used.

In an embodiment of the present invention, the width of the metal body through hole and the plated through hole is greater than or equal to the maximum width of the pin.

In an embodiment of the present invention, the pin at least reaches the second surface end corresponding to the plated through hole.

In an embodiment of the present invention, a solder material is formed between the pin and the metal body through hole and the plated through hole from the plated through hole corresponding to the second surface end in a wave soldering manner.

In an embodiment of the present invention, the material of the metal layer of the plated through hole and the metal body is copper.

In an embodiment of the present invention, the metal body system is fixed to the second surface by surface mount welding technology.

1: Circuit structure for improving conductivity of DIP components

10: Insulation board

10a: First surface

10b: Second surface

1010: First Opening

101: First Line

101a: Upper surface

1011: Plated Through Holes

102: Second line

102b: Lower surface

1020: Second Opening

103: Wall

11: Metal body

11a: Third surface

11b: Fourth surface

110: Metal body through hole

12: Metal layer

2: Electronic components

21: pin

3: Welding materials

h1, h2, h3: height

FIG. 1a is a perspective view of a new circuit structure for improving the conductivity of a dual in-line package component before inserting the electronic component, before inserting the electronic component.

FIG. 1 b is a cross-sectional view of the new circuit structure for improving the conductivity of the dual in-line package component before inserting the electronic component before inserting the electronic component.

FIG. 2 is a cross-sectional view of a circuit structure for improving the conductivity of a DIP component.

FIG. 3 is a cross-sectional view of another embodiment of a circuit structure for improving conductivity of a DIP device.

FIG. 4 is a cross-sectional view of another embodiment of the new circuit structure for improving the conductivity of the dual in-line package component before inserting the electronic component before inserting the electronic component.

FIG. 5 is a cross-sectional view of another embodiment of a circuit structure for improving the conductivity of a dual-in-line package component of the novel.

FIG. 6 is a cross-sectional view of another embodiment of a new circuit structure for improving the conductivity of a dual in-line package component.

Please refer to FIG. 1 a and FIG. 1 b , which are a three-dimensional view and a cross-sectional view of a new circuit structure 1 for improving the conductivity of a dual-in-line package component before the electronic component 2 is inserted, respectively. The novel circuit structure 1 for improving the conductivity of a dual in-line package device includes an insulating plate 10 , a metal body 11 and an electronic component 2 . The insulating plate 10 has a first surface 10a and a second surface 10b opposite to each other, at least a first circuit 101 is formed on the first surface 10a, and at least a first opening 1010 is opened on the upper surface 101a, and the downward at least Connected to the second surface 10b to form at least one through hole, thereby forming at least one plated through hole 1011 . The metal body 11 has an opposite third surface 11a and a fourth surface 11b, the fourth surface 11b is connected to the first surface 10a, the third surface 11a has at least one metal body through hole corresponding to the plated through hole 1011 hole 110. In particular, the electronic component 2 has at least one pin 21 inserted from the metal body through hole 110 corresponding to the third surface end and electrically connected to the plated through hole 1011 , and the wall surface area of the metal body through hole 110 is larger than the plated through hole 110 The wall surface area of the first circuit portion of the through hole 1011 .

Usually, the plated through hole 1011 and the metal body through hole 110 have the same cross-sectional profile in the horizontal direction. Therefore, the height h1 of the metal body through hole 110 may be greater than 8.5 times the height h2 of the first circuit portion of the plated through hole 1011 . In a feasible embodiment, the metal body 11 is fixed to the upper surface 101a of the first circuit 101 by surface mount technology (SMT, Surface Mount Technology). Therefore, the present invention can use the existing process equipment to set the metal body 11 .

In the case of forming the circuit structure 1 for improving the conductivity of the DIP component, it is reasonable that the width of the metal body through hole 110 and the plated through hole 1011 is greater than or equal to the width of the pin 21 of the electronic component 2 , so that the pin 21 can be inserted into the metal body through hole 110 and the plated through hole 1011 . During insertion, the pin 21 is inserted downward from the end of the metal body through hole 110 corresponding to the third surface 11a, and at least reaches the end of the plated through hole 1011 corresponding to the second surface 10b. Afterwards, a solder material 3 is formed upwardly between the pin 21 and the metal body through hole 110 and the plated through hole 1011 from the end of the plated through hole 1011 corresponding to the second surface 10b in a wave soldering manner. In detail, after the wave formed by the liquefied solder contacts the end of the plated through hole 1011 corresponding to the second surface 10b, it fills up the space between the pin 21, the metal body through hole 110 and the plated through hole 1011 by capillary phenomenon. voids, and then the structure shown in FIG. 2 is formed after cooling.

In detail, the plated through hole 1011 is formed by electroplating a metal layer 12 on the wall surface 103 of the insulating plate portion of the through hole, so as to prevent the wall surface 103 of the insulating plate portion of the through hole from being free from tin and hindering the above-mentioned capillary Phenomenon. Reasonably, the material of the metal layer 12 of the plated through hole 1011 , the first circuit 101 and the metal body 11 is copper. In a possible embodiment, as shown in FIG. 3 , a second circuit 102 is formed on the second surface 10b , and a second opening 1020 is formed on the lower surface 102b of the second circuit 102 , It is connected to the plated through hole 1011 upward, and the second opening 1020 and the original plated through hole 1011 are defined as a plated through hole 1011. In addition, the pin 21 reaches at least the end of the plated through hole 1011 corresponding to the lower surface 102b.

The present invention provides another circuit structure 1 for improving the conductivity of DIP components, which includes an insulating plate 10 , a metal body 11 and an electronic component 2 . As shown in FIG. 4 , the insulating plate 10 has a first surface 10a and a second surface 10b opposite to each other, and the first surface 10a is provided with at least one first opening 1010 which is communicated downward at least to the second surface 10b , to form at least one through hole, which further constitutes at least one plated through hole 1011 . The metal body 11 has an opposite third surface 11a and a fourth surface 11b, the fourth surface 11b is connected to the first surface 10a, the third surface 11a has at least one metal body through hole corresponding to the plated through hole 1011 hole 110. In particular, at least one pin 21 of the electronic component 2 is inserted from the metal body through hole 110 corresponding to the third surface end and is electrically connected to the plated through hole 1011 , and the height h3 of the metal body through hole 110 is between 0.3 mm to 0.6 mm, and the thickness of the metal layer of the general circuit is about 0.035 mm.

In a possible embodiment, the metal body 11 is fixed to the first surface 10a by surface mount welding technology. Therefore, the present invention can use the existing process equipment to set the metal body 11 . Reasonably, the metal body 11 is electrically connected to at least a part of other circuits of the insulating plate 10 .

In the case of forming the circuit structure 1 for improving the conductivity of DIP components, the width of the metal body through hole 110 and the plated through hole 1011 is greater than or equal to the maximum width of the pin 21 of the electronic component 2 , so that the pin 21 can be inserted into the metal body through hole 110 and the plated through hole 1011 . During insertion, the pin 21 is inserted downward from the end of the metal body through hole 110 corresponding to the third surface 11a, and at least reaches the end of the plated through hole 1011 corresponding to the second surface 10b. Afterwards, a solder material 3 is formed upwardly between the pin 21 and the metal body through hole 110 and the plated through hole 1011 from the end of the plated through hole 1011 corresponding to the second surface 10b by wave soldering. In detail, the wave connection formed by the liquefied solder After touching the plated through hole 1011 corresponding to the end of the second surface 10b, the gap between the pin 21 and the metal body through hole 110 and the plated through hole 1011 is filled upward by capillary phenomenon, and then after cooling, it is formed as shown in the figure. 5 shows the structure.

In detail, the plated through hole 1011 is formed by electroplating a metal layer 12 on the wall surface 103 of the insulating plate portion of the through hole, as shown in FIG. The tin phenomenon prevents the above-mentioned capillary phenomenon. Reasonably, the material of the metal layer 12 of the plated through hole 1011 , the first circuit 101 and the metal body 11 is copper. In a possible embodiment, a second circuit 102 is formed on the second surface 10b. As shown in FIG. 6 , a second opening 1020 is formed on the lower surface 102b of the second circuit 102, and the plated through hole 1011 is connected upwardly. At this time, the second opening 1020 and the original plated through hole 1011 are defined as a plated through hole 1011, and the pin 21 at least reaches the end of the plated through hole 1011 corresponding to the lower surface 102b. Reasonably, the material of the second circuit 102 is copper.

With the above-mentioned metal body and a metal body through hole corresponding to the plated through hole, the wall surface area is greater than the wall surface area of the first circuit portion of the plated through hole or the height of the metal body through hole is between 0.3 mm and 0.6 mm, the new type can make the circuit structure improve the electrical conductivity between the DIP components and the circuit, and avoid the prior art to improve the conductivity between the DIP components and the circuit. Problems such as the decrease in the integration degree of the printed circuit board caused by the widening of the circuit, the circuit interference caused by the use of multi-layer boards, and the complicated process of increasing the thickness of the power supply circuit.

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications should be included in the scope of the patent application of the present invention.

1: Circuit structure for improving conductivity of DIP components

10: Insulation board

10a: First surface

10b: Second surface

1010: First Opening

101: First Line

101a: Upper surface

1011: Plated Through Holes

103: Wall

11: Metal body

11a: Third surface

11b: Fourth surface

110: Metal body through hole

h1, h2: height

Claims (12)

A circuit structure for improving the conductivity of a dual in-line package element, comprising: an insulating plate with a first surface and a second surface opposite to each other, at least a first circuit is formed on the first surface, and the upper surface thereof At least one first opening is opened, which is communicated downward at least to the second surface to form at least one through hole, thereby forming at least one plated through hole; a metal body has a third surface and a fourth surface opposite to each other, It is connected to the first surface, the third surface has at least one metal body through hole corresponding to the plated through hole; and an electronic component has at least one pin, which corresponds to the third surface end from the metal body through hole The plated through hole is inserted and electrically connected; wherein, the wall surface area of the metal body through hole is larger than the wall surface area of the first circuit portion of the plated through hole. The circuit structure for improving the conductivity of a dual in-line package component as claimed in claim 1, wherein the height of the metal body through hole is greater than 8.5 times the height of the first circuit portion of the plated through hole. The circuit structure for improving the conductivity of a dual in-line package component as claimed in claim 1, wherein the width of the metal body through hole and the plated through hole is greater than or equal to the maximum width of the pin. The circuit structure for improving the conductivity of a dual in-line package component according to claim 1, wherein the pin reaches at least the plated through hole corresponding to the second surface end. The circuit structure for improving the electrical conductivity of a dual in-line package component as claimed in claim 4, wherein a solder material is formed on the pin and the metal from the plated through hole corresponding to the second surface end in a wave soldering manner between the body through hole and the plated through hole. The circuit structure for improving the conductivity of a dual in-line package component as claimed in claim 1, wherein the metal layer of the plated through hole, the first circuit and the metal body are made of copper. A circuit structure for improving the conductivity of a dual in-line package element, comprising: an insulating plate with a first surface and a second surface opposite to each other, the first surface is provided with at least one first opening, which faces downwards at least connected to the second surface to form at least one through hole, and then constitute at least one plated through hole; a metal body having a third surface and a fourth surface opposite to the first surface, the third surface having at least one metal body through hole corresponding to the plated through hole; and an electronic component having at least one pin inserted from the metal body through hole corresponding to the third surface end and electrically connected to the plated through hole; wherein , the height of the metal body through hole is between 0.3 mm and 0.6 mm. The circuit structure for improving the conductivity of a dual in-line package component as claimed in claim 7, wherein the width of the metal body through hole and the plated through hole is greater than or equal to the maximum width of the pin. The circuit structure for improving the conductivity of a dual in-line package component as claimed in claim 7, wherein the pin reaches at least the plated through hole corresponding to the second surface end. The circuit structure for improving the electrical conductivity of a dual in-line package component as claimed in claim 9, wherein a solder material is formed on the pin and the metal from the plated through hole corresponding to the second surface end in a wave soldering manner between the body through hole and the plated through hole. The circuit structure for improving the conductivity of a dual in-line package component as claimed in claim 7, wherein the metal layer of the plated through hole and the metal body are made of copper. The circuit structure for improving the electrical conductivity of a dual in-line package component as claimed in claim 7, wherein the metal body is fixed to the first surface by surface mount soldering technology.

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