TWM624482U - Atomic layer deposition apparatus - Google Patents

Abstract

The new type of atomic layer deposition equipment mainly includes a reaction chamber, a carrier plate, a shielding mechanism and a diffusion unit, wherein the carrier plate and the diffusion unit are located in the accommodating space of the reaction chamber. The shielding mechanism includes a connecting rod and a shielding plate, wherein the shielding plate is located in the accommodating space and faces the carrying plate, and the connecting rod passes through the reaction chamber and is connected to the shielding plate. The carrier plate is used for carrying at least one bonding substrate, and drives the carried bonding substrate to displace relative to the shielding mechanism, so that the shielding plate of the shielding mechanism contacts the upper surface of the bonding substrate. When the shielding plate contacts the upper surface of the bonding substrate, the diffusion unit is located around the bonding substrate, and outputs the precursor toward the side surface of the bonding substrate to form a protective layer on the side surface of the bonding substrate.

Description

Atomic Layer Deposition Equipment

The new model relates to an atomic layer deposition equipment, which is mainly used for forming a protective layer on the side surface of a bonding substrate.

Semiconductor devices mainly perform processes such as oxidation, lithography, etching, ion implantation and thin film deposition on a silicon substrate to form electronic components on the substrate. After the above steps are completed, the semiconductor packaging process is continued, and the substrate is mainly cut to form a plurality of die. Then, the die is set on the conductive frame, and wire bonding and sealing are performed.

With the continuous progress of integrated circuit technology, electronic products are developing towards the trend of light, thin, short, high performance, high reliability and intelligence. In the new generation of semiconductor packaging technology, a plurality of dies on two substrates have been aligned, and the two substrates are stacked and bonded (wafer bonding) to form a bonded substrate.

Then, the bonded substrates are sequentially subjected to low temperature thermal treatment, high precision back thinning, cleaning and TSV process. In the above-mentioned process, the bonding area of the two substrates may be damaged, especially the wet etching process during the TSV process, thereby reducing the yield of the semiconductor process.

As described in the prior art, when the conventional bonded substrates are subjected to the TSV process, the side surfaces of the bonded substrates may come into contact with the etchant, thereby destroying the structures of the two substrates on the bonding regions. Therefore, the present invention proposes a novel atomic layer deposition equipment, which can perform atomic layer deposition on the side surface of the bonding substrate, and form a protective layer on the side surface of the bonding substrate and the bonding area of the two substrates, which can effectively avoid the During the TSV process, the etchant contacts the side surface of the bonding substrate and the bonding area, thereby destroying the structure of each substrate on the bonding area.

An object of the present invention is to provide an atomic layer deposition apparatus, which mainly includes a reaction chamber, a carrier plate, a shielding mechanism and a diffusion unit, wherein the carrier plate, a part of the shielding mechanism and the diffusion unit are located in the container of the reaction chamber. in the setting space. The carrier plate includes a carrier surface for carrying a bonding substrate, wherein the bonding substrate is a stack of a first substrate and a second substrate, and includes a first surface, a second surface and at least one side surface.

The shielding mechanism includes a shielding plate and a connecting rod, wherein the connecting rod connects the reaction chamber and the shielding plate, and the shielding plate faces the bearing surface of the bearing plate. The carrier plate is used to carry the first surface of the bonding substrate, and drive the carried bonding substrate to displace relative to the shielding mechanism, so that the shielding plate of the shielding mechanism contacts and shields the second surface of the bonding substrate, and the side surface of the bonding substrate It will not be blocked by the carrier plate and the shielding plate.

When the carrier plate and the shielding plate contact the first surface and the second surface of the bonding substrate, respectively, the diffusion unit is located around the side surface of the bonding substrate, and outputs at least one precursor toward the side surface of the bonding substrate, so that the A protective layer is formed on the side surface of the substrate.

Specifically, the side surface of the bonding substrate has a bonding area, wherein the bonding area is the bonding area of the first substrate and the second substrate on the side surface, and is formed on the side surface of the bonding substrate. into an annular recess. The atomic layer deposition equipment of the present invention is mainly used to form a protective layer on the bonding area of the bonding substrate to prevent the etching solution from etching the concave bonding area.

The shielding mechanism of the present invention can exert a small pressure on the bonding substrate carried by the carrier plate through the shielding plate through gravity, the elastic force of the spring or the force provided by the motor, so that the shielding plate can indeed contact and shield the upper surface of the bonding substrate .

In addition, the diffusion unit may be annular, wherein the air inlet pipe of the diffusion unit surrounds the shielding plate, the bonding substrate and/or the carrier plate, so that the air inlet pipe can output the precursor toward the side surface of the bonding substrate and the bonding area , in order to facilitate the formation of a protective layer on the side surface of the bonding substrate and the bonding area.

In order to achieve the above-mentioned purpose, the present invention proposes an atomic layer deposition apparatus, which includes: a reaction chamber, including an accommodating space; a carrying tray, located in the accommodating space, and including a carrying surface for carrying a bonding substrate , wherein the bonding substrate comprises a stack of a first substrate and a second substrate, and has a first surface, a second surface and at least one side surface, wherein the side surface is located between the first surface and the second surface, and the bearing The plate is used to shield the first surface of the bonding substrate; a shielding mechanism includes: a shielding plate located in the accommodating space and facing the bearing surface of the bearing plate; a connecting rod connecting the reaction chamber and the shielding plate, wherein The shielding plate is used for shielding the second surface of the bonding substrate placed on the carrier plate; and a diffusion unit is arranged around the shielding plate and is fluidly connected to the accommodating space of the reaction chamber, wherein the diffusion unit is used to face the bonding plate The side surface of the substrate is transported with at least one precursor to form a protective layer on the side surface of the bonding substrate.

The atomic layer deposition equipment, wherein the diffusion unit includes a first annular conveying line and a plurality of first air inlet pipes, the first annular conveying line is located around the shielding plate, and the first air inlet pipe is fluidly connected to the first air inlet pipe. The annular conveying pipeline, wherein the first air inlet pipe faces the shielding plate or the lower part of the shielding plate, is used for conveying the precursor to the side surface of the bonding substrate.

The atomic layer deposition equipment, wherein the diffusion unit comprises a second annular conveying line and a plurality of second gas inlet pipes, the second annular conveying line is arranged on the periphery of the first annular conveying line, wherein the second annular conveying line passes through the The second air inlet pipe delivers a non-reactive gas into the accommodating space.

The atomic layer deposition equipment includes a lifting mechanism connected to the bearing plate, for driving the displacement of the bearing plate relative to the shielding plate, and adjusting the distance between the bearing plate and the shielding plate.

The atomic layer deposition equipment, wherein the lifting mechanism drives the carrier plate and the bonding substrate to be close to the shielding plate, so that the shielding plate shields the second surface of the bonding substrate, and a plurality of first air inlet pipes are located around the bonding substrate, and toward the side surface of the bonded substrate.

The atomic layer deposition equipment, wherein the shielding mechanism includes a driving motor, the driving motor is connected through a connecting rod and drives the shielding plate to displace relative to the carrier plate, so that the shield plate shields the second surface of the bonding substrate on the bearing plate.

The atomic layer deposition equipment, wherein the reaction chamber has a perforation, and the connecting rod passes through the perforation of the reaction chamber, and is connected to the shielding plate in the accommodating space of the reaction chamber, and the connecting rod is used for relative to the hole along the perforation. The bearing surface of the bearing disc is displaced.

The atomic layer deposition equipment, wherein the shielding mechanism includes an elastic unit and a stopper, the stopper is arranged on the connecting rod, and the elastic unit is located between the stopper of the connecting rod and the reaction chamber, and the carrying plate When the bonding substrate is driven to displace in the direction of the shielding plate and contact the shielding plate, the elastic unit between the stopper and the reaction cavity will be deformed.

The atomic layer deposition equipment, wherein the shielding mechanism includes a weight, the weight is connected to the connecting rod, and when the bearing plate drives the bonding substrate to move toward the shielding plate and contacts the shielding plate, the weight will pass through the shielding plate toward the direction of the bearing plate. Apply pressure to the bonded substrate.

In the atomic layer deposition equipment, the shielding plate includes a flange, which is arranged at an edge region of a surface of the shielding plate facing the carrier plate, and the shielding plate contacts the second surface of the bonding substrate on the supporting plate through the flange.

10: Atomic Layer Deposition Equipment

11: Reaction chamber

111: Perforation

12: Accommodating space

13: Carrier plate

131: Bearing surface

14: Bonding the substrate

141: The first substrate

142: First Surface

143: Second substrate

144: Second Surface

145: Protective layer

146: Side Surface

148: Bonding area

15: Blocking mechanism

151: Blocker

153: connecting rod

1531: Stopper

155: Heavy

17: Diffusion unit

171: The first annular conveying line

172: First intake pipe

173:Second annular delivery line

174: Second intake pipe

176: The third intake pipe

19: Lifting mechanism

191: Motor

193: Rod body

23: Extensions

25: Blocking mechanism

251: Blocker

2511: Flange

255: drive motor

35: Blocking mechanism

355: Stopper

357: Elastic unit

1 is a schematic cross-sectional view of an embodiment of a novel atomic layer deposition apparatus.

2 is a schematic cross-sectional view of an embodiment of the novel atomic layer deposition equipment for forming a protective layer on the side surface of the bonding substrate.

FIG. 3 is a schematic cross-sectional view of another embodiment of the novel atomic layer deposition apparatus for forming a protective layer on the side surface of the bonding substrate.

4 is a schematic cross-sectional view of another embodiment of the novel atomic layer deposition apparatus.

5 is a schematic cross-sectional view of another embodiment of the novel atomic layer deposition apparatus.

Please refer to FIG. 1 , which is a schematic cross-sectional view of an embodiment of a novel atomic layer deposition apparatus. As shown in the figure, the atomic layer deposition apparatus 10 mainly includes a reaction chamber 11 , a carrier plate 13 , a shielding mechanism 15 and a diffusion unit 17 , wherein the reaction chamber 11 includes an accommodating space 12 , and the carrier plate 13 , Part of the shielding mechanism 15 and the diffusing unit 17 are located in the accommodating space 12 .

The carrier plate 13 includes a carrier surface 131 for carrying a bonding substrate 14 . In an embodiment of the present invention, as shown in FIGS. 2 and 3 , the bonding substrate 14 includes a stack of a first substrate 141 and a second substrate 143 , wherein the first substrate 141 and the second substrate 143 may be wafers (wafer), and form a plurality of electronic components on a wafer through a semiconductor process.

The first substrate 141 and the second substrate 143 are firstly aligned, so that the plurality of electronic components on the first substrate 141 are aligned with the plurality of electronic components on the second substrate 143 respectively. The aligned first substrate 141 and the second substrate 143 can be sequentially bonded and thinned, and then through silicon vias (TSVs) are formed on the bonded substrate 14, and conductive materials are filled in the Silicon vias.

The appearance of the bonding substrate 14 is similar to a disk-shaped body, and includes a first surface 142 , a second surface 144 and at least one side surface 146 , wherein the side surface 146 is located between the first surface 142 and the second surface 144 and is connected The first surface 142 and the second surface 144 . Specifically, the side surface 146 of the bonding substrate 14 has at least one bonding area 148 , wherein the bonding area 148 is a connecting area between the first substrate 141 and the second substrate 143 and surrounds the side surface of the bonding substrate 14 . Annular recess on 146.

In the process of performing the TSV on the bonding substrate 14, the bonding area 148 on the side surface 146 of the bonding substrate 14 may be damaged, so that the edges of the first substrate 141 and the second substrate 143 are separated, thereby affecting the process. yield rate. For example, when TSVs are formed on the bonding substrate 14 by wet etching, the etchant may contact the bonding area 148 on the side surface 146 of the bonding substrate 14, so that the first substrate 141 and the second substrate 143 in the bonding area 148 are separated .

The atomic layer deposition apparatus 10 proposed by the present invention can perform atomic layer deposition on the side surface 146 of the bonding substrate 14 , and form a protective layer 145 on the side surface 146 and the bonding region 148 of the bonding substrate 14 . For example, the protective layer 145 can be is silica. The disposition of the protective layer 145 can prevent the etchant from contacting the side surface 146 and/or the bonding region 148 of the bonding substrate 14 and prevent the bonding region 148 of the bonding substrate 14 from being etched by the etchant.

The shielding mechanism 15 of the atomic layer deposition apparatus 10 of the present invention faces the bearing surface 131 of the bearing tray 13 . When the bonding substrate 14 is placed on the bearing surface 131 of the bearing tray 13 , the shielding mechanism 15 Facing the bonding substrate 14 on the carrier plate 13, for example, the first surface 142 of the bonding substrate 14 is placed on the bearing surface 131 of the carrier plate 13, and the carrier plate 13 shields the first surface 142 of the bonding substrate 14, while The shielding mechanism 15 faces the second surface 144 of the bonding substrate 14 .

In an embodiment of the present invention, the shielding mechanism 15 includes a shielding plate 151 and a connecting rod 153 , wherein the shielding plate 151 is located in the accommodating space 12 and faces the bearing surface 131 of the bearing plate 13 and/or the bonding substrate 14 of the second surface 144 . The connecting rod 153 is used to connect the reaction chamber 11 and the shielding plate 151 , wherein the shielding plate 151 and/or the connecting rod 153 can be displaced relative to the carrier plate 13 and/or the reaction chamber 11 . For example, the connecting rod 153 can pass through the reaction chamber 11 and connect to the shielding plate 151 in the accommodating space 12 .

The carrier plate 13 is connected to a lift mechanism 19 , wherein the lift mechanism 19 is used to drive the carrier plate 13 to displace relative to the shielding plate 151 in the accommodating space 12 to adjust the distance between the bearing plate 13 and the shielding plate 151 of the shielding mechanism 15 . Specifically, the lifting mechanism 19 may include a motor 191 and a rod body 193 , wherein the motor 191 is connected through the rod body 193 and drives the carrier plate 13 to move. The elevating mechanism 19 is a commonly used mechanism in the general atomic layer deposition apparatus 10, and will not be described in detail here.

The diffusing unit 17 may be an annular body, and is disposed around the shielding plate 151 . The diffusion unit 17 is fluidly connected to the accommodating space 12 of the reaction chamber 11 , wherein the diffusion unit 17 is used for delivering at least one precursor to the side surface 146 of the bonding substrate 14 to form a protective layer on the side surface 146 of the bonding substrate 14 145.

Specifically, the diffusion unit 17 may include a first annular conveying line 171 and a plurality of first air intake pipes 172 , wherein the first annular conveying line 171 is located around the shielding plate 151 , and the first air intake pipes 172 are connected The first annular conveying pipeline 171 and the accommodating space 12 . In addition, the first intake pipe 172 faces To the shielding plate 151 or below the shielding plate 151 , the first annular conveying line 171 can convey at least one precursor to the accommodating space 12 through the first air inlet pipe 172 .

The first air inlet pipe 172 may be inclined relative to the bearing surface 131 of the bearing tray 13 to eject the precursor toward the side surface 146 of the bonding substrate 14 .

In another embodiment of the present invention, the diffusion unit 17 may include a second annular conveying line 173 and a plurality of second air intake pipes 174 , wherein the second annular conveying line 173 is arranged around the outer side of the first annular conveying line 171 , and the second air intake pipe 174 is fluidly connected to the second annular conveying line 173 and the accommodating space 12 . In practical application, a non-reactive gas can be sent to the second annular conveying line 173 , wherein the second annular conveying line 173 conveys the non-reactive gas into the accommodating space 12 through the second air inlet pipe 174 , for example, the non-reactive gas Can be nitrogen or argon.

The second air inlet pipe 174 is approximately perpendicular to the extension line of the bearing surface 131 of the carrier plate 13 , wherein the extension line of the second air inlet pipe 174 is located radially outside the carrier plate 13 . When the second annular conveying line 173 conveys the non-reactive gas to the accommodating space 12 through the second air inlet pipe 174 , a gas wall is formed on the radially outer side of the carrier plate 13 to confine the precursor in the gas wall.

In practical application, the lifting mechanism 19 can drive the carrier plate 13 and the bonding substrate 14 to approach the shielding mechanism 15 , so that the shielding plate 151 of the shielding mechanism 15 contacts and shields the second surface of the bonding substrate 14 placed on the carrier plate 13 144. At this time, the diffusion unit 17 and/or the first air intake pipe 172 are located around the bonding substrate 14 , wherein the first air intake pipe 172 faces the side surface 146 of the bonding substrate 14 and faces the side surface of the bonding substrate 14 . 146 outputs a precursor to deposit a protective layer 145 on the side surface 146 of the bonding substrate 14 and the surface of the bonding region 148 .

In another embodiment of the present invention, the diffusion unit 17 may include a plurality of third air intake pipes 176 , wherein the third air intake pipes 176 are fluidly connected to the first annular conveying line 171 and the accommodating space 12 . Tool In general, the third gas inlet pipe 176 faces the side surface 146 of the bonding substrate 14 , wherein the first annular delivery line 171 delivers the precursor to the side surface 146 of the bonding substrate 14 via the third gas inlet pipe 176 . For example, the inclination angles of the third air intake pipe 176 and the first air intake pipe 172 are different, so as to increase the range in which the precursor is delivered to the accommodating space 12 .

In addition, after the shielding plate 151 contacts the second surface 144 of the bonding substrate 14, the lifting mechanism 19 may drive the carrier plate 13 and the bonding substrate 14 to continue to move in the direction of the shielding mechanism 15, and drive or push the shielding plate 151 slightly. It is displaced upward to ensure that the shielding plate 151 contacts and shields the second surface 144 of the bonding substrate 14 . Because the first surface 142 and the second surface 144 of the bonding substrate 14 are shielded by the carrier plate 13 and the shielding plate 151 respectively, the protective layer 145 is only formed on the side surface 146 of the bonding substrate 14 .

In practical application, the area of the shielding plate 151 may be slightly smaller than the area of the bonding substrate 14 , wherein the shielding plate 151 only contacts and shields a part of the second surface 144 of the bonding substrate 14 , and the part close to the outer edge of the bonding substrate 14 The second surface 144 is not shielded by the shielding plate 151 . When the area of the shielding plate 151 is slightly smaller than the second surface 144 of the bonding substrate 14, the protective layer 145 formed on the side surface 146 of the bonding substrate 14 will extend to part of the second surface 144 of the bonding substrate 14, as shown in FIG. 2 shown.

Conversely, if the area of the shielding plate 151 is equal to or greater than the area of the bonding substrate 14 , the shielding plate 151 completely shields the second surface 144 of the bonding substrate 14 , so that the protective layer 145 is limited to the side of the bonding substrate 14 . Surface 146, as shown in FIG.

In an embodiment of the present invention, a through hole 111 may be provided at the top of the reaction chamber 11 , and the connecting rod 153 passes through the through hole 111 of the reaction chamber 11 , and can be relative to the top of the reaction chamber 11 and along the through hole 111 . /or the bearing surface 131 of the bearing tray 13 is displaced or stretched. A stop can be set on the connecting rod 153 Abutting portion 1531 , wherein the abutting portion 1531 is disposed on the surface of the connecting rod 153 . The stopper portion 1531 is located outside the accommodating space 12 , and the stopper portion 1531 is slightly larger than the through hole 111 provided on the top of the reaction chamber 11 .

When the shielding plate 151 is not in contact with the bonding substrate 14 , the shielding mechanism 15 will be displaced toward the bearing plate 13 under the action of gravity until the stopper 1531 on the connecting rod 153 abuts against the reaction chamber 11 . When the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to continue to displace in the direction of the shielding mechanism 15 , the shielding plate 151 and the connecting rod 153 are slightly displaced upward.

In an embodiment of the present invention, as shown in FIG. 1 , the shielding mechanism 15 may also include a weight 155 , wherein the weight 155 is connected to the connecting rod 153 . When the shielding plate 151 is not in contact with the bonding substrate 14 , the weight 155 will be affected by Under the action of gravity, the shielding plate 151 is driven to displace in the direction of the carrier plate 13 , and presses the second surface 144 of the bonding substrate 14 in the direction of the carrier plate 13 . Since the connecting rod 153 and the shielding plate 151 have a certain weight and can press the bonding substrate 14 on the carrier plate 13 , the weight 155 is not a necessary component of the shielding mechanism 15 .

In another embodiment of the present invention, as shown in FIG. 4 , the shielding mechanism 25 includes a shielding plate 251 , a connecting rod 153 and a driving motor 255 , wherein the driving motor 255 is connected to the shielding plate 251 through the connecting rod 153 . The driving motor 255 is fixed on the reaction chamber 11 , and drives the shielding plate 251 to move relative to the carrier plate 13 through the connecting rod 153 , for example, close to or away from the supporting plate 13 , so that the shielding plate 251 shields the second surface 144 of the bonding substrate 14 .

In practical application, after the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to rise to the position, the drive motor 255 drives the connecting rod 153 and the shielding plate 251 to approach the bearing plate 13 until the shielding plate 251 contacts and shields the keys. The second surface 144 of the substrate 14 is bonded. In different embodiments, according to the thickness of the bonding substrate 14 , the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to approach the shielding plate 251 only after the shielding plate 251 is driven by the driving motor 255 to move to a predetermined position. .

In addition, there is a flange 2511 on the surface of the shielding plate 251 facing the carrier plate 13 , wherein the flange 2511 can be annular and is disposed on the edge area of the surface of the shielding plate 251 facing the supporting plate 13 . When the shielding plate 251 shields the second surface 144 of the bonding substrate 14 , only the flange 2511 of the shielding plate 251 will contact the second surface 144 of the bonding substrate 14 .

In an embodiment of the present invention, the carrier plate 13 may include an extension portion 23 , wherein the extension portion 23 may extend to the first air inlet pipe 172 and the second air inlet pipe 174 along a direction parallel to the bearing surface 131 of the carrier plate 13 . and/or the lower or extended position of the third air intake pipe 176 . The arrangement of the extending portion 23 is beneficial to gather the precursors of the first air inlet pipe 172 and the second air inlet pipe 174 into the accommodating space 12 around the bonding substrate 14 , and is beneficial to the side surface of the bonding substrate 14 . A protective layer 145 is formed on 146 .

Specifically, the extension portion 23 can be a plate-shaped body, and is placed on the bearing surface 131 of the bearing tray 13 . The area of the extension portion 23 is larger than that of the bearing surface 131 , and the carrier plate 13 carries the bonding substrate 14 through the extension portion 23 . In different embodiments, the carrier plate 13 having a larger area can also be directly used, wherein the carrier surface 131 of the carrier plate 13 extends to the first air intake pipe 172 , the second air intake pipe 174 and/or the third air intake pipe 176 in extended position.

In another embodiment of the present invention, as shown in FIG. 5 , the shielding mechanism 35 includes a shielding plate 151 , a connecting rod 153 , a stopper 355 and at least one elastic unit 357 , wherein the connecting rod 153 is connected to the accommodating space 12 The shielding plate 151 inside, and the stopper 355 is located outside the accommodating space 12 of the reaction chamber 11 and is connected with the connecting rod 153 . The elastic unit 357 is located between the stopper 355 and the reaction chamber 11 , for example, the elastic unit 357 may be a spring, wherein the elastic unit 357 is disposed outside the accommodating space 12 of the reaction chamber 11 and sleeved on the connecting rod 153 .

In an embodiment of the present invention, the elastic unit 357 may be a compression spring. When the bonding substrate 14 is not in contact with the shielding mechanism 15 , the stopper 355 and the reaction chamber 11 will compress the elasticity therebetween. The unit 357 , and the shielding plate 151 is placed at a fixed position in the accommodating space 12 . When the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to contact the shielding plate 151 and drives the shielding plate 151 to move upward, the elastic unit 357 located between the stopper 355 and the reaction chamber 11 will deform, such as restoring and stretch.

In another embodiment of the present invention, the elastic unit 357 can also be an extension spring, wherein two ends of the elastic unit 357 are respectively fixed on the stopper 355 and the reaction chamber 11 . When the lifting mechanism 19 drives the carrier plate 13 and the bonding substrate 14 to contact the shielding plate 151 and move toward the shielding mechanism 15 , the stopper 355 and the reaction chamber 11 elongate the elastic unit 357 therebetween.

Since the shielding plate 151 of the present invention is mainly used to shield the second surface 144 of the bonding substrate 14 , the weights of the shielding plate 151 , the connecting rod 153 and the weight 155 do not need to be too heavy, and there is no need to select a shielding plate 151 with too much elastic force. The elastic unit 357 is used to prevent the shielding plate 151 from applying excessive force to the bonding substrate 14 during the process of contacting and shielding the bonding substrate 14 , thereby causing damage to the bonding substrate 14 .

The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Modifications should be included in the scope of the patent application of the present invention.

10: Atomic Layer Deposition Equipment

11: Reaction chamber

111: Perforation

12: Accommodating space

13: Carrier plate

131: Bearing surface

14: Bonding the substrate

142: First Surface

144: Second Surface

146: Side Surface

15: Blocking mechanism

151: Blocker

153: connecting rod

1531: Stopper

155: Heavy

17: Diffusion unit

171: The first annular conveying line

172: First intake pipe

173:Second annular delivery line

174: Second intake pipe

176: The third intake pipe

19: Lifting mechanism

191: Motor

193: Rod body

Claims (10)

An atomic layer deposition equipment, comprising: a reaction chamber, including an accommodating space; a carrying plate, located in the accommodating space, and including a carrying surface for carrying a bonding substrate, wherein the bonding substrate includes a The stack of a first substrate and a second substrate has a first surface, a second surface and at least one side surface, wherein the side surface is located between the first surface and the second surface, and the carrier plate is used for shielding the first surface of the bonding substrate; a shielding mechanism including: a shielding plate located in the accommodating space and facing the bearing surface of the bearing plate; a connecting rod connecting the reaction chamber and the a shielding plate, wherein the shielding plate is used for shielding the second surface of the bonding substrate placed on the carrier plate; and a diffusion unit including a plurality of first air intake pipes located around the shielding plate and fluidly connected The accommodating space of the reaction chamber, wherein the diffusion unit is used to deliver at least one precursor to the side surface of the bonding substrate to form a protective layer on the side surface of the bonding substrate, wherein the carrier plate An extension portion is included, which extends to below the first air intake pipe along a direction parallel to the bearing surface of the bearing tray. The atomic layer deposition apparatus of claim 1, wherein the diffusion unit comprises a first annular conveying line, the first annular conveying line is located around the shielding plate, and the first air inlet pipe is fluidly connected to the first The annular conveying pipeline, wherein the first air inlet pipe faces the shielding plate or the lower part of the shielding plate, is used for conveying the precursor to the side surface of the bonding substrate. The atomic layer deposition apparatus according to claim 2, wherein the diffusion unit comprises a second annular conveying line and a plurality of second gas inlet pipes, the second annular conveying line is arranged on the periphery of the first annular conveying line, Wherein the second annular conveying line conveys a non-reactive gas into the accommodating space through the second air inlet pipe. The atomic layer deposition apparatus according to claim 2, comprising a lifting mechanism connected to the carrier plate for driving the carrier plate to displace relative to the shielding plate and adjusting the distance between the supporting plate and the shielding plate. The atomic layer deposition apparatus of claim 4, wherein the lifting mechanism drives the carrier plate and the bonding substrate to approach the shielding plate, so that the shielding plate shields the second surface of the bonding substrate, and the plurality of first An air intake pipe is located around the bonding substrate and faces the side surface of the bonding substrate. The atomic layer deposition apparatus according to claim 1, wherein the shielding mechanism includes a driving motor, and the driving motor is connected through the connecting rod and drives the shielding plate to displace relative to the carrying plate, so that the shielding plate shields the surface of the supporting plate the second surface of the bonding substrate. The atomic layer deposition apparatus according to claim 1, wherein the reaction chamber has a through hole, and the connecting rod passes through the through hole of the reaction chamber and is connected to the shield in the accommodating space of the reaction chamber The connecting rod is used for displacement relative to the bearing surface of the bearing tray along the through hole. The atomic layer deposition apparatus of claim 7, wherein the shielding mechanism comprises an elastic unit and a stopper, the stopper is disposed on the connecting rod, and the elastic unit is located at the stopper of the connecting rod When the carrier plate drives the bonding substrate to displace in the direction of the shielding plate and contacts the shielding plate, the elastic unit between the stopper and the reaction chamber will be deformed . The atomic layer deposition apparatus according to claim 7, wherein the shielding mechanism includes a weight, the weight is connected to the connecting rod, and when the carrier plate drives the bonding substrate to displace in the direction of the shielding plate and contacts the shielding plate, The weight will press the bonding substrate toward the carrier plate through the shielding plate. The atomic layer deposition apparatus as claimed in claim 1, wherein the shielding plate comprises a flange disposed on an edge region of a surface of the shielding plate facing the carrier plate, the shielding plate contacts the supporting plate via the flange the second surface of the bonding substrate.

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