TWM621975U - Memory and module thereof - Google Patents
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Abstract
一種記憶體,適於與光源模組的電連接部連接,記憶體包含電路板、晶片、訊號傳遞層、第一發光元件、第二發光元件及訊號連接部。電路板包含相對的第一面板部與第二面板部,第一面板部與第二面板部的上、下側分別界定具有間隔的發光區域及導電區域。晶片位於第一面板部的發光區域及導電區域之間。二訊號傳遞層分別位於二導電區域。多個第一發光元件分佈於第一面板部的發光區域。多個第二發光元件分佈於第二面板部的發光區域。訊號連接部用以與電連接部連接,訊號連接部位於電路板之一部。本創作另提出一實施例之記憶體模組,包含前述記憶體。A memory is suitable for connecting with an electrical connection part of a light source module. The memory includes a circuit board, a chip, a signal transmission layer, a first light-emitting element, a second light-emitting element and a signal connection part. The circuit board includes a first panel portion and a second panel portion opposite to each other, and the upper and lower sides of the first panel portion and the second panel portion respectively define a spaced light emitting area and a conductive area. The chip is located between the light emitting area and the conductive area of the first panel portion. The two signal transmission layers are respectively located in the two conductive regions. The plurality of first light emitting elements are distributed in the light emitting area of the first panel portion. The plurality of second light emitting elements are distributed in the light emitting area of the second panel portion. The signal connection part is used for connecting with the electrical connection part, and the signal connection part is located in a part of the circuit board. The present invention further proposes a memory module of an embodiment, which includes the aforementioned memory.
Description
一種記憶體,尤指一種具有外部連接端,可擴充其功能的記憶體。A memory, especially a memory with external connections that can expand its functions.
隨著技術發展,電子裝置的發展更趨向多元的應用。以往記憶體元件一般設置於電腦機殼內,作為強化電腦運算速度使用。然而,隨著電競領域的興起,發光記憶體的使用越來越熱門,除了要求記憶體符合高頻化的規格外,對於其產生的光學視覺效果,亦是講究。With the development of technology, the development of electronic devices tends to be more diversified. In the past, memory components were generally installed in the computer case to enhance the computing speed of the computer. However, with the rise of the e-sports field, the use of light-emitting memory is becoming more and more popular. In addition to requiring the memory to meet the high-frequency specifications, it is also important for the optical visual effects it produces.
一般記憶體的發光元件,大多是設置於記憶體本體的兩側,因此,對於記憶體本體的上方而言,會產生亮度不足的問題。一般是以在記憶體本體的側向上增加發光元件的數量以解決上述問題。In general, the light-emitting elements of the memory are mostly disposed on both sides of the memory body. Therefore, the problem of insufficient brightness occurs above the memory body. Generally, the above-mentioned problems are solved by increasing the number of light-emitting elements in the lateral direction of the memory body.
然而,記憶體的規格隨著技術進步,增設的電子零組件繁多,發光元件可設置的空間有限,且增設發光元件後仍無法補足記憶體本體上方的亮度。However, with the advancement of technology in the specifications of the memory, many electronic components are added, the space for the light-emitting element to be installed is limited, and the brightness above the memory body cannot be supplemented by adding the light-emitting element.
有鑑於此,本創作提出一實施例之一種記憶體,適於與光源模組的電連接部連接,記憶體包含電路板、晶片、訊號傳遞層、多個第一發光元件、多個第二發光元件及訊號連接部。In view of this, the present invention proposes a memory according to an embodiment, which is suitable for connecting with the electrical connection part of the light source module. The memory includes a circuit board, a chip, a signal transmission layer, a plurality of first light-emitting elements, a plurality of second light-emitting elements. Light-emitting element and signal connection part.
電路板包含相對的第一面板部與第二面板部,第一面板部與第二面板部的上、下側分別界定具有間隔的發光區域及導電區域。晶片連接電路板,位於第一面板部的發光區域及導電區域之間。訊號傳遞層位於二導電區域中之一。多個第一發光元件分佈於第一面板部的發光區域。多個第二發光元件分佈於第二面板部的發光區域。訊號連接部用以與電連接部連接,訊號連接部位於電路板之一部。The circuit board includes a first panel portion and a second panel portion opposite to each other, and the upper and lower sides of the first panel portion and the second panel portion respectively define a spaced light emitting area and a conductive area. The chip is connected to the circuit board, and is located between the light-emitting area and the conductive area of the first panel portion. The signal transmission layer is located in one of the two conductive regions. The plurality of first light emitting elements are distributed in the light emitting area of the first panel portion. The plurality of second light emitting elements are distributed in the light emitting area of the second panel portion. The signal connection part is used for connecting with the electrical connection part, and the signal connection part is located in a part of the circuit board.
在一些實施例中,記憶體還包含導光元件,位於電路板上方,以擴散第一發光元件及第二發光元件發出的光線。In some embodiments, the memory further includes a light guide element located above the circuit board to diffuse the light emitted by the first light emitting element and the second light emitting element.
在一些實施例中,訊號連接部為一導電層,橫跨連接第一面板部及第二面板部。In some embodiments, the signal connection portion is a conductive layer that spans and connects the first panel portion and the second panel portion.
在一些實施例中,訊號連接部包含插槽。In some embodiments, the signal connections include sockets.
在一些實施例中,訊號連接部包含插接結構。In some embodiments, the signal connection portion includes a plug-in structure.
本創作另提出一實施例之一種記憶體模組,包含記憶體及燈條。記憶體包含電路板、晶片、訊號傳遞層、多個第一發光元件、多個第二發光元件及訊號連接部。電路板包含相對的第一面板部與第二面板部,第一面板部與第二面板部的上、下側分別界定具有間隔的發光區域及導電區域。晶片連接電路板,位於第一面板部的發光區域及導電區域之間。訊號傳遞層位於二導電區域中之一。多個第一發光元件分佈於第一面板部的發光區域。多個第二發光元件分佈於第二面板部的發光區域。訊號連接部用以與電連接部連接,訊號連接部位於電路板之一部。燈條位於記憶體之上方,燈條包含電基板、多個發光源及電連接部,發光源位於電基板之一頂部。電連接部位於電基板上,用以與訊號連接部連接。Another embodiment of the present invention provides a memory module including a memory and a light bar. The memory includes a circuit board, a chip, a signal transmission layer, a plurality of first light-emitting elements, a plurality of second light-emitting elements and a signal connection portion. The circuit board includes a first panel portion and a second panel portion opposite to each other, and the upper and lower sides of the first panel portion and the second panel portion respectively define a spaced light emitting area and a conductive area. The chip is connected to the circuit board, and is located between the light-emitting area and the conductive area of the first panel portion. The signal transmission layer is located in one of the two conductive regions. The plurality of first light emitting elements are distributed in the light emitting area of the first panel portion. The plurality of second light emitting elements are distributed in the light emitting area of the second panel portion. The signal connection part is used for connecting with the electrical connection part, and the signal connection part is located in a part of the circuit board. The light bar is located above the memory, the light bar includes an electrical substrate, a plurality of light-emitting sources and electrical connection parts, and the light-emitting source is located on the top of one of the electrical substrates. The electrical connecting portion is located on the electrical substrate and is used for connecting with the signal connecting portion.
在一些實施例中,記憶體模組還包含導光元件,位於發光源之上方,用以擴散第一發光元件、第二發光元件及發光源發出之光線。In some embodiments, the memory module further includes a light guide element located above the light emitting source for diffusing the light emitted by the first light emitting element, the second light emitting element and the light emitting source.
在一些實施例中,訊號連接部為一導電層,橫跨連接第一面板部及第二面板部。電連接部為導電凸塊或導電線。In some embodiments, the signal connection portion is a conductive layer that spans and connects the first panel portion and the second panel portion. The electrical connection parts are conductive bumps or conductive lines.
在一些實施例中,訊號連接部包含插槽。電連接部包含插接頭。In some embodiments, the signal connections include sockets. The electrical connection includes plug connectors.
在一些實施例中,訊號連接部包含插接頭。電連接部包含插槽。In some embodiments, the signal connection portion includes a plug connector. The electrical connection includes a slot.
依據一些實施例,記憶體具有訊號連接部,可訊號連接於光源模組,強化記憶體上方的發光亮度。依據一些實施例,光源模組為燈條,記憶體可發揮三面發光的效能。依據一些實施例,記憶體包含導光元件,可加強擴散記憶體上側及側向發光。依據一些實施例,記憶體具有訊號連接部,訊號連接部連接於光源模組的電連接部,利用光源模組加強記憶體上方的亮度,如此,記憶體的發光元件的數量及其他零組件在記憶體上的設置有較多的設計自由度。換言之,記憶體的發光元件及電子零組件的設置較不受限於第一面板部與第二面板部的面積。According to some embodiments, the memory has a signal connection portion, which can be signal-connected to the light source module, so as to enhance the luminous brightness above the memory. According to some embodiments, the light source module is a light bar, and the memory can exert the effect of emitting light on three sides. According to some embodiments, the memory includes light-guiding elements that enhance the diffusion of light from the top and side of the memory. According to some embodiments, the memory has a signal connection portion, and the signal connection portion is connected to the electrical connection portion of the light source module, and the light source module is used to enhance the brightness above the memory. The settings on the memory allow more design freedom. In other words, the arrangement of the light-emitting elements and electronic components of the memory is less limited by the areas of the first panel portion and the second panel portion.
依據一些實施例,記憶體模組包含具有訊號連接部的記憶體,因此,同具有該等實施例之效益。According to some embodiments, the memory module includes memory with signal connections, and thus has the same benefits as these embodiments.
請參閱圖1A及圖1B,圖1A繪示本創作一實施例之記憶體之正視圖。圖1B繪示圖1A所示實施例之後視圖。記憶體1適於與光源模組的電連接部23連接,光源模組為具有發光元件的模組,例如燈條。所述的電連接部23可以是但不限於導電層(如金手指)、導電線或導電插、接頭。Please refer to FIG. 1A and FIG. 1B. FIG. 1A is a front view of a memory according to an embodiment of the present invention. FIG. 1B is a rear view of the embodiment shown in FIG. 1A . The
如圖1A所示,記憶體1包含電路板11、晶片113、訊號傳遞層114、多個第一發光元件115及訊號連接部116。電路板11包含相對的第一面板部111與第二面板部112(見圖1B),第一面板部111與第二面板部112的上、下側分別界定具有間隔的發光區域A及導電區域B。電路板11如網印電路板11(PCB),晶片113連接電路板11,位於第一面板部111的發光區域A及導電區域B之間。依據一些實施例,晶片113為一個,而依據圖1A所示的實施例,晶片113為多個。訊號傳遞層114位於第一面板部111的導電區域B或第二面板部112的導電區域B。在一些實施例中,記憶體1包含二個訊號傳遞層114,分別位於第一面板部111的導電區域B與第二面板部112的導電區域B(見圖1B)。換言之,記憶體1包含至少一訊號傳遞層114,該訊號傳遞層114在一些實施例中為金手指。多個第一發光元件115分佈於發光區域A。第一發光元件115及第二發光元件119可以是但不限於發光二極體(LED),相鄰的第一發光元件115之間具有間距。第一發光元件115排列之軌跡可以是直線、曲線、波浪狀或不規則狀,本創作並無限制。訊號連接部116用以與電連接部23連接(容後詳述),訊號連接部116位於電路板11之一部,即訊號連接部116可以位於電路板11上的任何一位置,在一些實施例中,訊號連接部116位於電路板11的旁側上(即第一面板部111的左側或右側,見圖8)。在一些實施例中,訊號連接部116位於電路板11的上側(如圖1A所示),然而,本創作並不限於此,端視生產者的設計及電路規劃,在另一些實施例中,訊號連接部116位於電路板11的下側。As shown in FIG. 1A , the
圖1B顯示的為電路板11的第二面板部112。第二面板部112與第一面板部111相對。第二面板部112上可設晶片或不設置晶片。依據該實施例中,第二面板部112上設置有晶片113’,第二面板部112的第二發光元件119,其分佈排列的軌跡可對稱於第一面板部111的第一發光元件115,或與第一面板部111的第一發光元件115分佈排列的軌跡不同。FIG. 1B shows the
請參閱圖2至圖3,併同參閱圖1A,圖2繪示本創作一實施例之記憶體之正視圖。圖3繪示本創作一實施例之記憶體之正視圖。在圖1A所示的實施例,訊號連接部116為金手指。然而本創作並不限於此。如圖2所示,訊號連接部116包含插槽116a。如圖3所示,訊號連接部116包含插接頭116b,為一種導電插頭。訊號連接部116的結構端視記憶體1所對應連接的光源模組2之電連接部23(如圖6)的型態而定。Please refer to FIG. 2 to FIG. 3 , and also refer to FIG. 1A . FIG. 2 shows a front view of the memory according to an embodiment of the present invention. FIG. 3 is a front view of a memory according to an embodiment of the present invention. In the embodiment shown in FIG. 1A , the
請參閱圖4,繪示本創作一實施例之記憶體1之立體示意圖。依據圖4的實施例,訊號連接部116的導電層116c橫跨連接第一面板部111與第二面板部112。依據圖4所示的實施例,記憶體1之兩側分別設置有第一發光元件115及第二發光元件119,可使記憶體1於側立狀態下的側向發出光線(見圖5)。Please refer to FIG. 4 , which is a three-dimensional schematic diagram of the
請參閱圖5,繪示本創作一實施例之記憶體1之側視圖。於此,記憶體1還包含導光元件117。導光元件117位於電路板11上方,用以擴散第一發光元件115及第二發光元件119發出的光線。所述的導光元件117可以是導光管(Light Pipe)或是導光罩,在圖5所示的實施例中,導光元件117為導光罩。因記憶體1具有導光元件117,可強化記憶體1於側立時向上及側向發光的亮度。Please refer to FIG. 5 , which is a side view of the
在前述的多個第一發光元件115中,其發出的燈色可以相同或不同,例如,將第一面板部111的第一發光元件115,沿著其排列的軌跡,區分為不同的燈色。第二面板部112的第二發光元件119之燈色可以相同或不同。第二發光元件119亦可與第一發光元件115發出的燈色相同或不同,本創作並無限制記憶體1具有多少第一發光元件115、具有多少第二發光元件119及具有多少種燈色,端視生產者的設計及電路板11的電路規劃。Among the aforementioned plurality of first light-emitting
請參閱圖6及圖7,圖6繪示本創作一實施例之記憶體模組100之正視圖。圖7繪示圖6所示實施例之記憶體模組100之分解示意圖。記憶體模組100包含記憶體1及燈條2。關於記憶體1的說明,請再參閱圖1A至圖5及相關說明,在此不再贅述。燈條2位於記憶體1的上方,燈條2包含電基板21、多個發光源22及電連接部23,發光源22位於電基板21的頂部211。發光源22可以是但不限於發光二極體。電連接部23位於電基板21上,用以與訊號連接部116連接。依據圖6及圖7所示的實施例,訊號連接部116為一導電層116c,其橫跨連接第一面板部111及第二面板部112。電連接部23為導電凸塊。於此,記憶體1除了具有側向的光源外,藉由設置燈條2,還可於記憶體1的上方發光,也就是說,燈條2可增加或強化記憶體1上方的亮度,如此,記憶體模組100於使用時,可發揮三面發光的效能。在一些實施例中,電連接部23為導電線,連接於訊號連接部116,以此結構同樣能發揮上述記憶體模組100三面發光的效益。此外,在圖6及圖7所示的實施例中,燈條2與記憶體1之間設置有支撐部118,支撐部118用以穩固燈條2設置於記憶體1上方。在一些實施例中,支撐部118為軟墊。在另一些實施例中,支撐部118為膠層(塊)。在一些實施例中,支撐部118為電路板11的一部份。Please refer to FIG. 6 and FIG. 7 . FIG. 6 is a front view of the
請參閱圖8及圖9,圖8繪示本創作一實施例之記憶體模組100之正視圖。圖9繪示圖8所示實施例之記憶體模組100之分解示意圖。依據此實施例,訊號連接部116位於電路板11的一旁側上,於此實施例中,訊號連接部116為導電層116c,橫跨連接第一面板部111及第二面板部112。電連接部23為導電凸塊,於電路板11的側邊電性連接訊號連接部116,於此,同樣能達到利用燈條2強化記憶體1上方亮度的目的。Please refer to FIG. 8 and FIG. 9 . FIG. 8 is a front view of the
請參閱圖10,繪示本創作一實施例之記憶體模組100之側視圖。依據此實施例,記憶體模組100還包含導光元件3。導光元件3可以是但不限於導光管。依據圖10所示實施例中,導光元件3為導光燈罩。導光元件3位於發光源22之上方,藉此結構,導光元件3可擴散第一發光元件115、第二發光元件119及發光源22發出之光線,以強化以記憶體1其側向及上方的亮度。Please refer to FIG. 10 , which shows a side view of the
請參閱圖11至圖13,分別繪示本創作一實施例之記憶體模組100之分解示意圖。如圖11所示,記憶體1的訊號連接部116包含具有孔洞之插槽116d,於此,燈條2的電連接部23的插接頭23a為對應的導電柱。如圖12所示,記憶體1的訊號連接部116為一種插槽116a,於此,燈條2的電連接部23為一種適於插入該插槽116a的插接頭23b。如圖13所示,不同於圖12所示的實施例,於此,記憶體1的訊號連接部116包含插接頭116b。燈條2的電連接部23則為對應該插頭的插槽23c。換言之,本創作並不限制訊號連接部116與電連接部23訊號連接的結構。Please refer to FIG. 11 to FIG. 13 , which are exploded schematic views of the
依據一些實施例,燈條2的發光源22的燈色可與第一發光元件115、第二發光元件119的燈色相同或不同。此外,本創作並不限定發光源22的數量,誠如上所述,端視生產者所採用的燈條2以及記憶體1之電路板11電路的規劃而定。According to some embodiments, the light color of the
依據一些實施例,記憶體具有訊號連接部,可訊號連接於光源模組,擴充記憶體上方的亮度。依據一些實施例,光源模組為燈條,位於記憶體的上方,使記憶體發揮三面發光的效能。依據一些實施例,記憶體包含導光元件,可加強擴散記憶體上側與側向發光。依據一些實施例,記憶體具有訊號連接部,訊號連接部連接於光源模組的電連接部,利用光源模組加強記憶體上方的亮度,如此,記憶體的發光元件的數量則不受限於第一面板部及第二面板部的面積(例如強加發光元件的數量於第一面板部及第二面板部上)。換言之,記憶體的發光元件及電子零組件具有較多的調整空間。According to some embodiments, the memory has a signal connection portion that can be signal-connected to the light source module to expand the brightness above the memory. According to some embodiments, the light source module is a light bar, which is located above the memory, so that the memory can exert the effect of emitting light on three sides. According to some embodiments, the memory includes light-guiding elements that enhance the diffusion of light from the top and side of the memory. According to some embodiments, the memory has a signal connection portion, the signal connection portion is connected to the electrical connection portion of the light source module, and the light source module is used to enhance the brightness above the memory, so that the number of light-emitting elements of the memory is not limited The area of the first panel portion and the second panel portion (for example, the number of light-emitting elements imposed on the first panel portion and the second panel portion). In other words, the light-emitting elements and electronic components of the memory have more room for adjustment.
依據一些實施例,記憶體模組包含具有訊號連接部的記憶體,因此,同具有該等實施例之效益。According to some embodiments, the memory module includes memory with signal connections, and thus has the same benefits as these embodiments.
100:記憶體模組
1:記憶體
11:電路板
111:第一面板部
112:第二面板部
113,113’:晶片
114:訊號傳遞層
115:第一發光元件
116:訊號連接部
116a:插槽
116b:插接頭
116c:導電層
116d:插槽
117:導光元件
118:支撐部
119:第二發光元件
2:光源模組,燈條
21:電基板
211:頂部
22:發光源
23:電連接部
23a:插接頭
23b:插接頭
23c:插槽
3:導光元件
A:發光區域
B:導電區域
100: Memory module
1: memory
11: circuit board
111: The first panel part
112: Second panel part
113,113': Wafer
114: Signal transmission layer
115: The first light-emitting element
116:
[圖1A] 繪示本創作一實施例之記憶體之正視圖。 [圖1B] 繪示圖1A所示實施例之後視圖。 [圖2] 繪示本創作一實施例之記憶體之正視圖。 [圖3] 繪示本創作一實施例之記憶體之正視圖。 [圖4] 繪示本創作一實施例之記憶體之立體示意圖。 [圖5] 繪示本創作一實施例之記憶體之側視圖。 [圖6] 繪示本創作一實施例之記憶體模組之正視圖。 [圖7] 繪示圖6所示實施例之記憶體模組之分解示意圖。 [圖8] 繪示本創作一實施例之記憶體模組之正視圖。 [圖9] 繪示圖8所示實施例之記憶體模組之分解示意圖。 [圖10] 繪示本創作一實施例之記憶體模組之側視圖。 [圖11] 繪示本創作一實施例之記憶體模組之分解示意圖。 [圖12] 繪示本創作一實施例之記憶體模組之分解示意圖。 [圖13] 繪示本創作一實施例之記憶體模組之分解示意圖。 [FIG. 1A] shows a front view of the memory of an embodiment of the present invention. [ FIG. 1B ] A rear view of the embodiment shown in FIG. 1A is shown. [FIG. 2] shows a front view of the memory of an embodiment of the present invention. [FIG. 3] shows a front view of the memory of an embodiment of the present invention. [FIG. 4] is a three-dimensional schematic diagram of a memory according to an embodiment of the present invention. [FIG. 5] shows a side view of the memory of an embodiment of the present invention. [FIG. 6] is a front view of a memory module according to an embodiment of the present invention. FIG. 7 is an exploded schematic view of the memory module of the embodiment shown in FIG. 6 . [ FIG. 8 ] is a front view of a memory module according to an embodiment of the present invention. [FIG. 9] is an exploded schematic view of the memory module of the embodiment shown in FIG. 8. [FIG. [FIG. 10] is a side view of a memory module according to an embodiment of the present invention. [FIG. 11] is an exploded schematic diagram of a memory module according to an embodiment of the present invention. [FIG. 12] An exploded schematic diagram of a memory module according to an embodiment of the present invention. FIG. 13 is an exploded schematic view of the memory module according to an embodiment of the present invention.
1:記憶體 1: memory
11:電路板 11: circuit board
111:第一面板部 111: The first panel part
113:晶片 113: Wafer
114:訊號傳遞層 114: Signal transmission layer
115:第一發光元件 115: The first light-emitting element
116:訊號連接部 116: Signal connection
A:發光區域 A: Light-emitting area
B:導電區域 B: Conductive area
Claims (11)
Priority Applications (2)
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TW110212036U TWM621975U (en) | 2021-10-13 | 2021-10-13 | Memory and module thereof |
CN202122996302.7U CN216287589U (en) | 2021-10-13 | 2021-12-01 | Memory and module thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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TW110212036U TWM621975U (en) | 2021-10-13 | 2021-10-13 | Memory and module thereof |
Publications (1)
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TWM621975U true TWM621975U (en) | 2022-01-01 |
Family
ID=80784913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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TW110212036U TWM621975U (en) | 2021-10-13 | 2021-10-13 | Memory and module thereof |
Country Status (2)
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CN (1) | CN216287589U (en) |
TW (1) | TWM621975U (en) |
-
2021
- 2021-10-13 TW TW110212036U patent/TWM621975U/en unknown
- 2021-12-01 CN CN202122996302.7U patent/CN216287589U/en active Active
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