TWM621538U - Filter structure arbitrarily combining UV, R, G, B, IR - Google Patents

Abstract

An arbitrary combination of UV, R, G, B, and IR filter junction grooves, comprising a substrate and a filter layer, wherein the substrate is a product of a wafer semiconductor sensing element or a light-transmitting element, and the filter The layer is formed on one side of the substrate and consists of a plurality of basic units arranged in a matrix. Each basic unit includes a plurality of pixel filters formed by vacuum coating, and the plurality of pixel filters includes a UV pixel filter. , an R pixel filter film, a G pixel filter film, a B pixel filter film and an IR pixel filter film in any plural, and the plural pixel filter films can only supply the light of the corresponding wavelength Through this, the uniformity of the filter film can be better (uniformity ± 5nm), and a wider band can be provided to form more images of different wavelengths, so that the resolution with higher sensitivity can meet the optical requirements. specification requirements. .

Description

Any combination of UV, R, G, B, IR filter structure

This creation is about a sensor chip applied to optical sensors such as Ambient Light Sensor (ALS), Proximity Sensor (PS), RGB color temperature sensor and gesture sensor. The technical field of the filter structure, especially a filter film that can make the uniformity of the filter film better (uniformity ± 5nm), and provide a wider band to form more images of different wavelengths, so that it has higher sensitivity The resolution can meet any combination of UV, R, G, B, IR filter structure required by optical specifications.

Traditional optical sensors, such as visible light camera modules, need to use infrared light cut-off filters to filter out unnecessary low-frequency near-infrared light, so as to prevent infrared light from affecting the visible light part, resulting in false colors or ripples, but the traditional visible light The camera module has no UV pixels and IR pixels.

Commonly known color filters, as shown in Taiwan Patent No. 100112527, are mainly based on inkjet printing, and the thickness of the color filter film is about 5 microns. The use of pigment photoresist is wasteful, and the resolution And the position reproducibility is poor. The manufacturing process gradually increases with the size of the substrate. The initial method of photoresist coating is from the central drop (tube) plus spin coating (spin coat), and it has evolved into slot coating. The purpose of slitting and spin coating is to reduce the amount of photoresist used. In the future, the larger size of the substrate will cause the uniformity of the filter film. (uniformity) cannot meet the specification requirements (±2%) and optical transmittance and wavelength cannot meet the specification requirements (the cut-off band is lower than the transmittance of 1%), and the cut-off band transmittance is too high, which causes noise. The material used in conventional metallic color filters is silver, which is environmentally unstable and prone to corrosion.

In view of this, the creator of this creation has developed and designed this creation based on the above-mentioned problems, in-depth conception, and active research and improvement.

The main purpose of this creation is to effectively solve the problem that the uniformity of the filter film cannot meet the specification requirements (±2%) and the optical transmittance and wavelength cannot meet the specifications when the size of the large substrate is produced in the conventional color filter. Demand (the cut-off band is lower than 1% of the penetration rate) and other problems.

An arbitrary combination filter structure of UV, R, G, B, and IR described in this creation includes a substrate and a filter layer. Wherein, the substrate is a product of a wafer semiconductor sensing element or a light-transmitting element. The filter layer is formed on one side of the substrate and consists of a plurality of basic units arranged in a matrix, each basic unit includes a plurality of pixel filters formed by vacuum coating, and the plurality of pixel filters includes a UV pixel Filter film, an R pixel filter film, a G pixel filter film, a B pixel filter film and an IR pixel filter film in any plurality, and the plurality of pixel filter films can only be used for corresponding Light of wavelength passes through.

The UV, R, G, B, IR filter structure of any combination provided by this creation can be fabricated by vacuum coating and photoresist mask, so that even when making large substrates, the uniformity reaches ± Below 5nm, and the cut-off band transmittance is less than 1%, any combination of these UV, R, G, B, IR filter structures has higher transmittance and narrower passband, resulting in more vivid colors and Brighter, and when applied to ambient light sensor (ALS), proximity sensor (PS), RGB color temperature sensor And gesture sensor chip... When the sensor chip of the optical sensor is used, the response time can be faster, the color resolution and adjustment sensitivity of the same product can be greatly improved, and the brightness of the photosensitive contrast can be greatly improved.

10: Substrate

20: filter layer

21: Basic Unit

22: Pixel filter film

23: Rubidium (Rb) layer

24: High refractive index layer

30: Vacuum sputtering reactive coating system

31: Roller

32: Coating chamber

33: Sputtering source

34: Reaction source area

35: Target

[Figure 1] is a schematic diagram of the structure of this creation.

[Fig. 2] is a schematic diagram of the basic unit configuration of the filter layer of this creation.

[Figure 3] is the spectrum of the UV pixel filter of this creation.

[Figure 4] is the spectral diagram of the R pixel filter film of this creation.

[Fig. 5] is the spectral diagram of the G pixel filter film of this creation.

[Figure 6] is the spectrum diagram of the B pixel filter film of this creation.

[Figure 7] is the spectrum diagram of the IR pixel filter film of this creation.

[Figure 8] is a schematic diagram of the production process of the production method of this creation.

[Figure 9] is a schematic diagram of the production process of the photoresist mask of this creation.

[Fig. 10] is a schematic diagram of the structure of the vacuum sputtering reactive coating system of this creation.

Please refer to FIG. 1 and FIG. 2 , which show that any combination of UV, R, G, B, IR filter structures described in this creation includes a substrate 10 and a filter layer 20 , wherein:

The substrate 10 is a wafer semiconductor sensing element.

The filter layer 20 is formed on one side of the substrate 10 and is composed of a plurality of basic units 21 arranged in a matrix. Each basic unit 21 includes a plurality of pixel filter films 22 formed by vacuum coating. The plurality of pixel filters 22 include a UV pixel filter, an R pixel filter The film, a G pixel filter film, a B pixel filter film and an IR pixel filter film are any plural, and the plural pixel filter films can only allow the light of the corresponding wavelength to pass through.

The combination of the plurality of pixel filters 22 of each basic unit 21 in this invention can be a UV pixel filter, an R pixel filter, a G pixel filter, a B pixel filter and an IR pixel filter The combination of any two, any three or more of the optical films is exemplified by the combination of the four in this embodiment. in:

The UV pixel filter film is formed by stacking a plurality of rubidium (Rb) layers 23 and a plurality of high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layer, so as to form a passband in the wavelength range of 300nm to 1100nm, The central wavelength of the passband is between 300nm and 400nm, the transmittance of the other cutoff bands is lower than 1% on average, and the transmittance of the central wavelength of the passband is greater than 50% when the incident angle is 0°.

The R pixel filter film is formed by stacking a plurality of rubidium (Rb) layers 23 and a plurality of high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layer, so as to form a passband in the wavelength range of 300nm to 1100nm, The central wavelength of the passband is between 580 nm and 740 nm, and the transmittance of other cutoff bands is lower than 1%. The transmittance of the central wavelength of the passband is greater than 55% when the incident angle is 0°.

The G pixel filter film is formed by stacking a plurality of rubidium (Rb) layers 23 and a plurality of high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layer, so that a passband is formed in the wavelength range of 300nm to 1100nm. , the central wavelength of the passband is between 500nm and 565nm, the transmittance of other cutoff bands is lower than 1%, and the transmittance of the central wavelength of the passband is greater than 55% when the incident angle is 0°.

The B pixel filter film is formed by stacking a plurality of rubidium (Rb) layers 23 and a plurality of high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layer, so as to have a pass through formed in the wavelength range of 300nm to 1100nm. band, the center wavelength of this passband is 400nm to 500nm, and the rest of the cutoff band transmittance Below 1%, the transmittance of the passband center wavelength is greater than 55% when the incident angle is 0°.

The IR pixel filter film is formed by stacking a rubidium (Rb) layer 23 and a plurality of high refractive index layers 24 with a higher refractive index than the rubidium (Rb) layer, so as to have a passband formed in the wavelength range of 300nm to 1100nm , the central wavelength in the infrared wavelength range of 800nm to 1100nm only partially or partially overlaps to form a passband, and the transmittance of the rest of the cutoff band is lower than 1%. The transmittance of the central wavelength of the passband at the incident angle of 0° transmittance) is greater than 30%.

In the above-mentioned complex pixel filter film 22, the complex rubidium (Rb) layer 23 has a refractive index of 0.25 to 0.13 and an extinction coefficient of 0.24 to 5.58 in the wavelength range of 350 nm to 2000 nm. The multiple high refractive index layers 24 can be titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ -5 ) #), any one of the mixed film material (H ₄ ) and its mixture. Moreover, the refractive index of the complex high-refractive index layer 24 in the wavelength range of 350 nm to 1100 nm is greater than 1.6, and the extinction coefficient is close to zero. The UV pixel filter film, the R pixel filter film, the G pixel filter film, and the B pixel filter film and the IR pixel filter film.

Hereinafter, various structural conditions of the UV pixel filter film, the R pixel filter film, the G pixel filter film, the B pixel filter film and the IR pixel filter film are illustrated by way of example.

The UV pixel filter film: The UV pixel filter film is formed by stacking a plurality of rubidium (Rb) layers 23 and a plurality of high refractive index layers 24. The plurality of high refractive index layers 24 may be titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O _5-5 #), any one of mixed film material (H ₄ ), for example , the refractive index of the titanium pentoxide (Ti3O5) layer in the wavelength range of 350nm to 1100nm is greater than 1.6, and the extinction coefficient is close to 0. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 in a wavelength range of 350 nm to 2000 nm, and an extinction coefficient of 0.24 to 5.58. Its structural conditions are as follows:

As shown in FIG. 3 , the UV pixel filter film has a passband formed in the wavelength range of 300nm to 1100nm, the passband center wavelength is 300nm to 400nm, and the transmittance ( transmittance) is greater than 50%, and the average transmittance of the remaining cut-off bands is less than 1%.

The R pixel filter film: The R pixel filter film is composed of a plurality of rubidium (Rb) layers 23 and high refractive index layers 24 stacked on each other, and the high refractive index layers 24 are respectively titanium pentoxide (Ti ₃ O _{5 ).} ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ -5#), any one of mixed film materials (H ₄ ), for example, the five The refractive index of the titanium oxide (Ti3O5) layer in the wavelength range from 350nm to 1100nm is greater than 1.6, and the extinction coefficient is close to 0. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 in a wavelength range of 350 nm to 2000 nm, and an extinction coefficient of 0.24 to 5.58. Its structural conditions are as follows:

。

.

As shown in FIG. 4 , the R pixel filter film has a passband formed in a wavelength range of 300nm to 1100nm, the passband center wavelength is 580nm to 740nm, and the passband center wavelength is at an incident angle of 0° when the transmittance ( transmittance) is greater than 55%, and the transmittance of other cut-off bands is less than 1%.

The G pixel filter film: The G pixel filter film is composed of a plurality of rubidium (Rb) layers 23 and high refractive index layers 24 stacked on each other, and the high refractive index layers 24 are respectively titanium pentoxide (Ti ₃ O _{5 ).} ), titanium dioxide (TiO _{2 )} , niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), any one of mixed film materials (H ₄ ), for example, the titanium pentoxide The refractive index of the (Ti3O5) layer in the wavelength range from 350nm to 1100nm is greater than 1.6, and the extinction coefficient is close to 0. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 in a wavelength range of 350 nm to 2000 nm, and an extinction coefficient of 0.24 to 5.58. Its structural conditions are as follows:

。

.

As shown in FIG. 5 , the G pixel filter film has a passband formed in a wavelength range of 300nm to 1100nm, the passband center wavelength is 500nm to 565nm, and the transmittance ( transmittance) is greater than 55%, and the transmittance of other cut-off bands is less than 1%.

The B pixel filter film: The B pixel filter film is composed of a plurality of rubidium (Rb) layers 23 and high refractive index layers 24 stacked on each other, and the high refractive index layers 24 are respectively titanium pentoxide (Ti ₃ O _{5 ).} ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), any one of mixed film materials (H ₄ ), for example, the titanium pentoxide The refractive index of the (Ti3O5) layer in the wavelength range from 350nm to 1100nm is greater than 1.6, and the extinction coefficient is close to 0. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 in a wavelength range of 350 nm to 2000 nm, and an extinction coefficient of 0.24 to 5.58. Its structural conditions are as follows:

。

.

As shown in Figure 6, the B pixel filter has a wavelength of 300nm to 1100nm A passband is formed in the range, the central wavelength of the passband is 400nm to 500nm, the transmittance of the passband central wavelength is greater than 55% when the incident angle is 0°, and the transmittance of the rest of the cutoff bands is lower than 1%.

The IR pixel filter film: The IR pixel filter film is formed by stacking multiple rubidium (Rb) layers 23 and high refractive index layers 24, and the high refractive index layers 24 are titanium pentoxide (Ti ₃ O _{5 ).} ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), any one of mixed film materials (H ₄ ), for example, the titanium pentoxide The refractive index of the (Ti3O5) layer in the wavelength range from 350nm to 1100nm is greater than 1.6, and the extinction coefficient is close to 0. The rubidium (Rb) layer has a refractive index of 0.25 to 0.13 in a wavelength range of 350 nm to 2000 nm, and an extinction coefficient of 0.24 to 5.58. Its structural conditions are as follows:

。

.

As shown in FIG. 7 , the IR pixel filter film has a passband in the wavelength range of 300nm to 1100nm, the central wavelength in the infrared wavelength range of 800nm to 1100nm only partially or partially overlaps to form a passband, and the rest is cut off The transmittance of the band is less than 1%, and the transmittance of the central wavelength of the passband is greater than 30% when the incident angle is 0°.

Please refer to FIG. 7 , which shows the fabrication method of any combination of UV, R, G, B, and IR filter structures described in this creation, including:

(a) Forming a photoresist mask on the substrate 10 : a photoresist mask is formed on one side of a substrate 10 , and a plurality of hollowed out coating regions are provided on the photoresist mask where the pixel filter film 22 is to be coated , for example, forming hollowed out the plurality of coating regions in the block to be coated with the R pixel filter film;

(b) Vacuum coating: using the method of vacuum coating to form a plurality of pixel filter films 22, such as R pixel filter;

(c) coating photoresist: coating photoresist on the hollow coating area of the photoresist mask after plating the pixel filter film to seal the hollow coating area;

(d) Etching: To plate a plurality of other layers on the photoresist mask by etching The pixel filter film 22 forms a plurality of other coating regions with hollows, for example, the plurality of other coating regions with hollows are formed in the block where the G pixel filter is to be coated;

(e) Vacuum coating again: using the method of vacuum coating to form a plurality of other pixel filters in which a plurality of rubidium (Rb) layers 23 and a plurality of high refractive index layers 24 of different thicknesses are stacked on each other in the plurality of other coating areas formed by etching Film 22, such as a G pixel filter film. Steps (c) to (e) can be repeated as required to produce a filter structure composed of three or more pixel filter films;

(f) Clearing the photoresist mask: Clearing the photoresist mask is completed.

Please refer to FIG. 6, which indicates that (a) step includes (a1) spin coating photoresist; (a2) soft bake; (a3) exposure; (a4) soft bake; (a5) development; (a6) Soft bake and (a7) cleaning process.

Please refer to FIG. 7 , which indicates that the vacuum coating process of the step (b) and the step (e) is performed in a vacuum sputtering reactive coating system 30 , which is mainly based on rubidium (Rb) and the refractive index ratio of rubidium (Rb) High refractive index materials, such as titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), tantalum pentoxide (Ta ₂ O ₅ ), Mixed film material (H ₄ ) and its mixture of oxides, etc., are used as the sputtering target 35. The production process is (A) placing the clean substrate 10 on the roller 31 with the coating surface facing outward; (B) making The drum 31 rotates at a constant speed in the coating chamber 32; (C) when the vacuum degree is 10-3Pa to 10-5Pa, the corresponding sputtering source 33 is turned on and argon gas is passed through, and the target material 35 is bombarded under the action of the electric field to form The ions are attached to the substrate 10; (D) with the rotation of the roller 31, the substrate 10 is brought to the reaction source area 34; (E) oxygen or argon gas is introduced into the reaction source area 34 to form plasma, under the action of the electric field It moves down to the substrate 10 at a high speed, and finally forms rubidium (Rb) or a high refractive index material on the substrate 10 .

Wherein, the substrate 10 is arranged on the drum 31, and the rotation speed is adjustable as the drum 31 rotates counterclockwise. The coated substrate 10 first passes through the target 35, and is deposited with a thin layer of rubidium (Rb) film or high After the refractive index film, it rotates to the reaction source and is ionized by oxygen ions and electrons. Synthesize optical films with desired properties. Controlling the number of seconds of each layer of coating can control the thickness of each layer of coating, the longer the time, the thicker the thickness.

When preparing a rubidium (Rb) film, the volume percentage of the oxygen introduced in the total oxygen and argon gas is 10% to 90%, and the refractive index in the wavelength range of 350nm to 2000nm can be prepared to be 0.25 to 0.13, and the extinction coefficient is 0.24 to 5.58 film. When using high-refractive-index materials, the volume percentage of the oxygen introduced into the total oxygen and argon gas is 10% to 90%, and the refractive index of 350nm to 1100nm can be gradually changed from 1.3 to 2.5, and the extinction coefficient is close to 0. Refractive index film.

The UV, R, G, B, IR filter structure of any combination provided by this creation can be fabricated by vacuum coating and photoresist mask, so that even when making large substrates, the uniformity reaches ± Below 5nm, it meets the requirements of optical specifications, and when it is applied to Ambient Light Sensor (ALS), Proximity Sensor (PS), RGB color temperature sensor and gesture sensor... When it is used as the sensing chip of the optical sensor, the response time can be faster, the color resolution and adjustment sensitivity of the same product can be greatly improved, and the brightness of the photosensitive contrast can be greatly improved. Moreover, the present invention can make the thickness of the formed UV, R, G, B, IR and other pixel filter films 22 between nanometers, so it can be applied to technological products of nanometer process technology.

To sum up, since this creation has the above-mentioned advantages and practical value, and no similar products have been published in similar products, it has met the application requirements for a new type of patent, and it is appropriate to file an application in accordance with the law.

10: Substrate

20: filter layer

22: Pixel filter film

23: Rubidium (Rb) layer

24: High refractive index layer

Claims (8)

A filter structure of any combination of UV, R, G, B, IR, including: a substrate, which is either a product of a wafer semiconductor sensing device or a light-transmitting device; and A filter layer, formed on one side of the substrate, is composed of a plurality of basic units arranged in a matrix, each basic unit includes a plurality of pixel filters formed by vacuum coating, and the plurality of pixel filters includes a UV Any combination of pixel filter film, a G pixel filter film, a B pixel filter film and an IR pixel filter film can make the plurality of pixel filter films only allow the light of the corresponding wavelength to pass through. The filter structure of any combination of UV, R, G, B, and IR according to claim 1, wherein: The UV pixel filter film is formed by stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers with a higher refractive index than the rubidium (Rb) layer. Through the special thickness configuration of each layer, it has a wavelength of 300nm to 1100nm. A passband is formed in the range, the central wavelength of the passband is 300nm to 400nm, and the rest are cut off. The transmittance of the central wavelength of the passband is greater than 50% when the incident angle is 0°, and the transmittance of the cutoff band is lower than 1% on average. ; The R pixel filter film is formed by stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers with a higher refractive index than the rubidium (Rb) layer. With the special thickness configuration of each layer, it has a wavelength of 300nm to 1100nm. A passband is formed within the range, the central wavelength of the passband is 580nm to 740nm, and the rest are cut off. When the incident angle of the passband central wavelength is at 0°, the transmittance (transmittance) is greater than 55%, and the cut-off band transmittance is lower than 1%; The G pixel filter film is formed by stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers with a higher refractive index than the rubidium (Rb) layer. The special thickness configuration of each layer makes it have a 300nm to 1100nm diameter. A passband is formed in the wavelength range, the central wavelength of the passband is 500nm to 565nm, and the rest are cut off. The transmittance of the central wavelength of the passband is greater than 55% when the incident angle is 0°, and the transmittance of the cutoff band is lower than 1%. ; The B pixel filter film is formed by stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers with a higher refractive index than the rubidium (Rb) layer. With the special thickness configuration of each layer, it has a wavelength of 300nm to 1100nm. A passband formed in the wavelength range, the central wavelength of the passband is 400nm to 500nm, and the rest are cut off. The transmittance of the central wavelength of the passband is greater than 55% when the incident angle is 0°, and the transmittance of the cutoff band is lower than 1 %; The IR pixel filter film is formed by stacking a plurality of rubidium (Rb) layers and a plurality of high refractive index layers with a higher refractive index than the rubidium (Rb) layer, so as to have a passband formed in the wavelength range of 300nm to 1100nm, The central wavelength in the infrared wavelength range of 800nm to 1100nm only partially or partially overlaps to form a passband, and the transmittance of the rest of the cutoff band is lower than 1%. ) is greater than 30%. The filter structure of any combination of UV, R, G, B, IR according to claim 2, wherein the refractive index of the complex rubidium (Rb) layer of the complex pixel filter film in the wavelength range of 350nm to 2000nm is 0.25 to 0.13, the extinction coefficient is 0.24 to 5.58, the complex high refractive index layer, which can be titanium pentoxide (Ti ₃ O ₅ ), titanium dioxide (TiO ₂ ), niobium pentoxide (Nb ₂ O ₅ ), pentoxide Tantalum (Ta ₂ O ₅ ), mixed film material (H ₄ ) and mixtures thereof, and the complex high-refractive index layer has a refractive index greater than 1.6 and an extinction coefficient close to 0 in the wavelength range of 350 nm to 1100 nm. The filter structure of any combination of UV, R, G, B, IR according to claim 3, wherein the structural condition of the UV pixel filter film is any one of the following tables:

. The filter structure of any combination of UV, R, G, B, and IR according to claim 3, wherein the structural condition of the R pixel filter film is any one of the following tables:

. The filter structure of any combination of UV, R, G, B, IR according to claim 3, wherein the structural condition of the G pixel filter film is any one of the following tables:

. The filter structure of any combination of UV, R, G, B, IR according to claim 3, wherein the structural condition of the B pixel filter film is any one of the following tables:

. The filter structure of any combination of UV, R, G, B, IR according to claim 3, wherein the structural condition of the IR pixel filter film is any one of the following tables:

.

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