TWM611509U - Substrate surface enhancing structure - Google Patents

Abstract

A substrate surface enhancement structure includes a substrate body, a circuit layer, a solder mask layer, a first structure enhancement layer, and a signal transmitting layer. The substrate body has a top surface. The circuit layer is disposed on the top surface of the substrate body. The solder mask layer is disposed on the circuit layer. The first structure enhancement layer is disposed on the circuit layer, and surrounds and contacts the solder mask layer. The signal transmitting layer is disposed on the first structure enhancement layer, and surrounds and contacts the solder mask layer.

Description

Substrate surface strengthening structure

This creation is related to a reinforced structure, especially a substrate surface reinforced structure.

Please refer to FIG. 5, which is a process flow chart of a semiconductor substrate structure used in a conventional electronic product. In FIG. 5, the a-th step is to provide a substrate body 21. The b step is to form the circuit layer 22 on the upper surface 211 of the substrate body 21. The c step is to form a solder mask 23 on the circuit layer 22. In step d, a signal transmission layer 25 is formed around the solder mask 23 and on the circuit layer 22, thereby completing the semiconductor substrate structure 2.

The conventional electronic product semiconductor substrate structure 2 includes a substrate body 21, a circuit layer 22, a solder mask layer 23 and a signal transmission layer 25. The circuit layer 22 is disposed on the substrate body 21 and is used to electrically connect various electronic components. The generally used material is copper. The solder mask 23 is disposed on the circuit layer 22 to protect and prevent the circuit layer 22 from being oxidized or to prevent the circuit layer 22 from being accidentally touched by solder and affecting the function of the circuit board. In order to increase the signal transmission speed of current 5G electronic products, a signal transmission layer 25 that can increase the transmission speed is provided on the circuit layer 22 and around the solder mask 23. The material generally used is silver.

As mentioned above, although the signal transmission layer 25 that can increase the transmission speed is provided on the circuit layer 22, when the signal transmission layer 25 using the material silver is in direct contact with the circuit layer 22 using the material copper, the potential difference If the surrounding environment is further exposed to high temperature, it will easily produce a galvanic effect.

Please refer to FIGS. 6A and 6B, which are a cross-sectional view and a top view of the semiconductor substrate structure completed according to the process of FIG. 5. Specifically, the result of the Javanni effect will cause the copper ions of the circuit layer 22 and the silver ions of the signal transmission layer 25 to be excited and replace each other, which will cause the circuit layer 22 to be broken and damaged, thus making it impossible to communicate between electronic components. The electrical connection is smooth, as shown in the notch 26 under the solder mask 23 in FIGS. 6A and 6B. Furthermore, because different metals have different potentials, when two different metals are in contact with each other, there will be a potential difference between the metals, and the electrons of the high-potential metal element will flow to the low-potential metal element, and the result is like a battery. The effect of current flow. In other words, when two metals are in contact with each other, the metal with the potential sequence in front will form an anode for the metal with the potential sequence behind, and the metal with the potential sequence behind will form the cathode for the metal with the potential sequence in front. As a result of this battery effect, because of the current flow (from the anode to the cathode), the higher potential metal will undergo anodic dissolution corrosion. Therefore, when the potential difference between metals is greater, the current generated will be stronger, and the corrosion loss rate will be greater.

Based on the above, for the order of the potentials of various metals in the Javanni effect, the higher the metal potential, the higher the potential of the metal, the lower the potential of the metal can be reduced to replace it from the ionic state. Reduced to metal. Compared with the material of silver used in the signal transmission layer 25, the material of copper used in the above-mentioned circuit layer 22, because the potential sequence of copper is higher than that of silver, when copper and silver are in contact with each other, copper will form an anode. The silver forms the cathode. In addition, since the solder mask layer 23 and the circuit layer 22 and the signal transmission layer 25 surrounding the junction will be reflowed multiple times, the heat generated will more easily excite the copper ions of the circuit layer 22 and the signal transmission layer 25. The silver ions replace each other, that is, around the solder mask 23, the junctions between the first side 231 and the second side 232 of the solder mask 23 and the circuit layer 22 will be broken or damaged due to the Javanni effect. This causes the reliability problem of the circuit layer 22.

Accordingly, how to provide a substrate surface strengthening structure to solve the above-mentioned problems has become an urgent research topic.

In view of the above problems, the present invention discloses a substrate surface strengthening structure, including a substrate body, a circuit layer, a solder mask, a first structure strengthening layer, and a signal transmission layer. The substrate body has an upper surface. The circuit layer is arranged on the upper surface of the substrate body. The solder mask is arranged on the circuit layer. The first structural strengthening layer is arranged on the circuit layer around the solder mask and is in contact with the solder mask. The signal transmission layer is arranged on the first structural strengthening layer around the solder mask and is in contact with the solder mask.

Based on the above, this creation isolates the materials of the circuit layer and the signal transmission layer commonly used in the prior art, and sets at least one structural strengthening layer between the circuit layer and the signal transmission layer to avoid the circuit layer and signal transmission. The Javanni effect of the layer causes cracks and breaks in the structure of the circuit layer, which in turn affects the electrical connection between the various electronic components. In other words, with the substrate surface strengthening structure provided by this invention, the effect of strengthening the surface structure of the substrate can be achieved, the resistance of the surface structure of the substrate body can be reduced, and the reliability of signal transmission can be improved.

1: Strengthened structure of substrate surface

11: Substrate body

111: upper surface

12: Line layer

13: Solder mask

131: Side

132: side

133: side

134: Side

14: The first structural strengthening layer

15: Signal transmission layer

16: Second structural strengthening layer

2: Semiconductor substrate structure

21: Substrate body

211: upper surface

22: Line layer

23: Solder mask

231: first side

232: second side

25: Signal transmission layer

26: gap

W1: width

W2: width

Figure 1 is a process flow chart of creating a substrate surface strengthening structure; Figures 2A and 2B are a cross-sectional view and top view of a substrate surface strengthening structure completed according to the process of Figure 1; Figure 3 is a creation of a substrate surface strengthening structure Another process flow chart; FIGS. 4A and 4B are a cross-sectional view and a top view of the substrate surface strengthening structure completed according to the process of FIG. 3; FIG. 5 is a process flow chart of a semiconductor substrate structure used in a conventional electronic product; and 6A and 6B are cross-sectional views and top views of the semiconductor substrate structure completed according to the process of FIG. 5.

Please refer to Figure 1, which is a flow chart of the manufacturing process for creating a substrate surface strengthening structure. In FIG. 1, the a-th step is to provide a substrate body 11. The b step is to form the circuit layer 12 on the upper surface 111 of the substrate body 11. The c step is to form a solder mask 13 on the circuit layer 12. The d step is to form the first structural strengthening layer 14 around the solder mask 13 and on the circuit layer 12. The e step is to form a signal transmission layer 15 around the solder resist layer 13 and on the first structure strengthening layer 14, thereby completing the substrate surface strengthening structure 1, wherein the first structure strengthening layer 14 and the signal transmission layer 15 are the same as the solder resist layer The side surfaces 131 and 132 around 13 are in contact, wherein the first side surface 131 and the second side surface 132 are opposite sides of the solder mask 13.

Please refer to FIGS. 2A and 2B, which are a cross-sectional view and a top view of the substrate surface strengthening structure completed according to the manufacturing process of FIG. 1 of the present invention. The substrate surface strengthening structure 1 includes a substrate body 11, a circuit layer 12, a solder mask layer 13, a first structure strengthening layer 14 and a signal transmission layer 15. The substrate body 11 has an upper surface 111. The circuit layer 12 is disposed on the upper surface 111 of the substrate body 11. The solder resist layer 13 is disposed on the circuit layer 12. The first structural strengthening layer 14 is disposed on the circuit layer 12 around the solder mask 13 and is in contact with the side surfaces 131 and 132 around the solder mask 13. The signal transmission layer 15 is disposed on the first structural strengthening layer 14 around the solder mask 13 and is in contact with the side surfaces 131 and 132 around the solder mask 13.

Continuing from the above, it can be seen from the cross-sectional view of FIG. 2A and the top view of FIG. 2B that since the width W1 of the solder mask 13 is greater than the width W2 of the circuit layer 12, the first structural strengthening layer 14 is disposed on the solder mask 13 is on the circuit layer 12 around the first side surface 131 and the second side surface 132 and is in contact with the solder mask 13. In another embodiment of the present invention, when the width W1 of the solder mask 13 is smaller than the width W2 of the circuit layer 12, the four sides 131, 132, 133, 134 and the circuit layer 12 around the solder mask 13 are all The first structural strengthening layer 14 must be provided to avoid direct contact between the circuit layer 12 and the signal transmission layer 15 to cause the Javanni effect.

In an embodiment of the present invention, the material used for the circuit layer 12 of the substrate surface strengthening structure 1 is copper.

In an embodiment of the present invention, the material used for the signal transmission layer 15 of the substrate surface strengthening structure 1 is silver.

In one embodiment of the present creation, the first structure strengthening layer 14 of the substrate surface strengthening structure 1 can use palladium as a material that isolates the circuit layer 12 from directly contacting the signal transmission layer 15, so as to avoid the generation of the circuit layer 12 and the signal transmission layer 15 The Javanni effect. When palladium is selected as the material of the first structure strengthening layer 14, its thickness is between 0.05 and 0.15 microns. In another embodiment of the present invention, the first structure strengthening layer 14 of the substrate surface strengthening structure 1 can be made of gold as the material that isolates the circuit layer 12 from directly contacting the signal transmission layer 15 to avoid the generation of the circuit layer 12 and the signal transmission layer 15 The Javanni effect. When gold is selected as the material of the first structure strengthening layer 14, its thickness is between 0.05 and 0.1 microns.

Please refer to FIG. 3, which is another process flow chart for creating a substrate surface strengthening structure. In FIG. 3, the a-th step is to provide a substrate body 11. The b step is to form the circuit layer 12 on the upper surface 111 of the substrate body 11. The c step is to form a solder resist layer 13 on the circuit layer 12. The d step is to form the first structural strengthening layer 14 around the solder mask 13 and on the circuit layer 12. The e step is to form the second structure strengthening layer 16 around the solder mask layer 13 and on the first structure strengthening layer 14. The fth step is to form a signal transmission layer 15 around the solder mask 13 and on the second structure strengthening layer 16, thereby completing the substrate surface strengthening structure 1, wherein the first structure strengthening layer 14, the signal transmission layer 15, and the second structure strengthening The layer 16 is in contact with the side surfaces 131 and 132 around the solder mask 13.

Please refer to FIGS. 4A and 4B, which are a cross-sectional view and a top view of the substrate surface strengthening structure completed according to the manufacturing process of FIG. 3 of the present invention. The difference from the embodiment of FIG. 1 is that the embodiment of FIG. 3 further adds a second structure strengthening layer 16, which is disposed around the solder resist layer 13, between the first structure strengthening layer 14 and the signal transmission layer 15, and The solder mask 13 is in contact with the surroundings.

Continuing from the above, it can be seen from the cross-sectional view of FIG. 4A and the top view of FIG. 4B that since the width W1 of the solder mask 13 is greater than the width W2 of the circuit layer 12, the first structure strengthening layer 14 and the second structure strengthening layer 16 is set on the circuit layer 12 on the first side 131 and the second side 132 around the solder mask 13, and It is in contact with the solder mask 13. In another embodiment of the present invention, when the width W1 of the solder mask 13 is smaller than the width W2 of the circuit layer 12, the four sides 131, 132, 133, 134 and the circuit layer 12 around the solder mask 13 are all The first structural strengthening layer 14 and the second structural strengthening layer 16 must be provided to prevent the circuit layer 12 from directly contacting the signal transmission layer 15 and causing the Javanni effect. The first side surface 131 and the second side surface 132 are solder resist layers 13 opposite sides, the third side 133 and the fourth side 134 are opposite sides of the solder mask 13.

In an embodiment of the present invention, the material used for the circuit layer 12 of the substrate surface strengthening structure 1 is copper.

In an embodiment of the present invention, the material used for the signal transmission layer 15 of the substrate surface strengthening structure 1 is silver.

In an embodiment of the present invention, the first structure strengthening layer 14 of the substrate surface strengthening structure 1 can be selected from gold as the material for isolating the circuit layer 12 and the signal transmission layer 15 in direct contact. When gold is selected as the material of the first structure strengthening layer 14, its thickness is between 0.05 and 0.1 microns. In addition, the second structure strengthening layer 16 of the substrate surface strengthening structure 1 can use palladium as a material to isolate the circuit layer 12 and the signal transmission layer 15 from directly contacting, so as to prevent the circuit layer 12 and the signal transmission layer 15 from generating a Javanni effect. When palladium is selected as the material of the second structure strengthening layer 16, its thickness is between 0.05 and 0.15 microns. Furthermore, the thickness of the first structural strengthening layer 14 is smaller than the thickness of the second structural strengthening layer 16.

As mentioned above, in the embodiment of FIG. 4A, the first structural strengthening layer 14 uses gold as the strengthening material, except for the copper used for strengthening and isolating the circuit layer 12 and the material silver used for the signal transmission layer 15 in direct contact. In addition to avoiding the Javanni effect, it is also possible to further avoid direct contact between the copper material used in the circuit layer 12 and the palladium material used in the second structure strengthening layer 16 to avoid voids in the palladium. In addition, in this creation, gold is selected as the material of the first structure strengthening layer 14 and the thickness is set with a thinner thickness, which can further strengthen the structure of the substrate surface.

To sum up, this creation isolates the materials of the circuit layer and the signal transmission layer commonly used in the prior art, and sets at least one structural strengthening layer between the circuit layer and the signal transmission layer. In order to prevent the circuit layer and the signal transmission layer from generating the Javanni effect, causing cracks and breakages in the structure of the circuit layer, thereby affecting the electrical connection between the various electronic components. In other words, with the substrate surface strengthening structure provided by this invention, the effect of strengthening the surface structure of the substrate can be achieved, the resistance of the surface structure of the substrate body can be reduced, and the reliability of signal transmission can be improved.

1: Strengthened structure of substrate surface

11: Substrate body

111: upper surface

12: Line layer

13: Solder mask

131: First side

132: second side

14: The first structural strengthening layer

15: Signal transmission layer

Claims (15)

A strengthening structure for the surface of a substrate, comprising: A substrate body having an upper surface; A circuit layer disposed on the upper surface of the substrate body; A solder mask layer is arranged on the circuit layer; A first structural strengthening layer, arranged on the circuit layer around the solder mask layer, and in contact with the circumference of the solder mask layer; and A signal transmission layer is arranged on the first structural strengthening layer around the solder mask layer, and is in contact with the circumference of the solder mask layer. The substrate surface strengthening structure according to claim 1, wherein one of the material of the circuit layer is copper. The substrate surface strengthening structure according to claim 1, wherein one of the materials of the first structure strengthening layer is palladium. The substrate surface strengthening structure according to claim 3, wherein a thickness of the first structure strengthening layer is between 0.05 and 0.15 μm. The substrate surface strengthening structure according to claim 1, wherein one of the materials of the first structure strengthening layer is gold. The substrate surface strengthening structure according to claim 5, wherein a thickness of the first structure strengthening layer is between 0.05 and 0.1 μm. The substrate surface strengthening structure according to claim 1, wherein one of the material of the signal transmission layer is silver. The substrate surface strengthening structure according to claim 1, further comprising a second structural strengthening layer disposed between the first structural strengthening layer and the signal transmission layer, and located around the solder resist layer, and in contact with the solder resist Contact around the layer. The substrate surface strengthening structure according to claim 8, wherein the thickness of the first structure strengthening layer is smaller than the thickness of the second structure strengthening layer. The substrate surface strengthening structure according to claim 8, wherein one of the materials of the first structure strengthening layer is gold. The substrate surface strengthening structure according to claim 10, wherein a thickness of the first structure strengthening layer is between 0.05 and 0.1 μm. The substrate surface strengthening structure according to claim 8, wherein one of the materials of the second structure strengthening layer is palladium. The substrate surface strengthening structure according to claim 12, wherein a thickness of the second structure strengthening layer is between 0.05 and 0.15 microns. The substrate surface strengthening structure according to claim 8, wherein the first structure strengthening layer is in contact with a first side surface and a second side surface of the solder mask layer; The first side surface and the second side surface are two opposite side surfaces of the solder mask. The substrate surface strengthening structure according to claim 8, wherein the second structure strengthening layer is in contact with a first side surface and a second side surface of the solder mask layer; The first side surface and the second side surface are two opposite side surfaces of the solder mask.

Images