TWM596973U - 具有高散熱異質接面雙載子電晶體的半導體元件 - Google Patents
具有高散熱異質接面雙載子電晶體的半導體元件 Download PDFInfo
- Publication number
- TWM596973U TWM596973U TW109202306U TW109202306U TWM596973U TW M596973 U TWM596973 U TW M596973U TW 109202306 U TW109202306 U TW 109202306U TW 109202306 U TW109202306 U TW 109202306U TW M596973 U TWM596973 U TW M596973U
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- heat dissipation
- unit
- layer
- emitter
- Prior art date
Links
- 230000017525 heat dissipation Effects 0.000 title claims abstract description 69
- 239000004065 semiconductor Substances 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 15
- 230000009977 dual effect Effects 0.000 claims abstract 5
- 229910052751 metal Inorganic materials 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 20
- 239000010953 base metal Substances 0.000 claims description 9
- 239000011810 insulating material Substances 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 81
- 229910052581 Si3N4 Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 7
- 230000000694 effects Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229920000098 polyolefin Polymers 0.000 description 4
- 239000002356 single layer Substances 0.000 description 4
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 229910002065 alloy metal Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910005540 GaP Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000002482 conductive additive Substances 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41708—Emitter or collector electrodes for bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/737—Hetero-junction transistors
- H01L29/7371—Vertical transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
- H10B20/10—ROM devices comprising bipolar components
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0813—Non-interconnected multi-emitter structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/6631—Bipolar junction transistors [BJT] with an active layer made of a group 13/15 material
- H01L29/66318—Heterojunction transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Abstract
本新型為提供一種具有高散熱異質接面雙載子電晶體的半導體元件,包含一基板、至少一異質接面雙載子電晶體、一絕緣單元,及一散熱單元。該至少一異質接面雙載子電晶體具有形成於該基板的一半導體單元及一電極單元,該絕緣單元覆蓋該基板及該至少一異質接面雙載子電晶體,並分別界定出可令該至少一異質接面雙載子電晶體的集極電極、基極電極,及射極電極的部分表面露出的開口。該散熱單元由導電散熱材料構成,覆蓋該至少一異質接面雙載子電晶體的射極電極且厚度不小於3μm,其中,該射極電極具有一經由該開口並沿該絕緣單元表面延伸的電極線,且該散熱單元為覆蓋該電極線並對外裸露。
Description
本新型是有關於一種半導體元件,特別是指一種具有高散熱異質接面雙載子電晶體的半導體元件。
參閱圖1,以異質接面雙極性電晶體(HBT)1的功率放大器而言,該異質接面雙極性電晶體1包含一基板11、一半導體單元12、一電極單元13,及一絕緣單元14。該半導體單元12形成於該基板11上且具有自該基板11表面依序向上形成的一集極層121、一基極層122,及一射極層123。該電極單元13具有一設置於該集極層121的集極金屬層131、一設置於該基極層122的基極金屬層132,及一設置於該射極層123的射極金屬層133。該絕緣單元14具有一第一絕緣層141,及覆蓋該第一絕緣層141表面的第二絕緣層142。該第一絕緣層141會覆蓋該基板11、該半導體單元12及該電極單元13露出之表面,並介於該集極金屬層131、基極金屬層132,及射極金屬層133之間,以令該集極金屬層131、基極金屬層132,及射極金屬層133彼此電性隔離,且於對應該集極金屬層131、該基極金屬層132,及該射極金屬層133的位置具有可令部分的該集極金屬層131、該基極金屬層132,及該射極金屬層133露出的通孔143。之後,即可藉由該通孔143形成令該電極單元13對外電連接的電極線(圖1顯示自該射極金屬層133經由該通孔143對外延伸的電極線134),而將該異質接面雙載子電晶體對外電連接。
然而,對高功率元件而言,例如,以高速無線通訊系統為例,由於主動元件必須具備有良好的高頻特性及高功率輸出等特性。因此,元件需承受的電流及電壓較大,且於操作過程會蓄積較大的熱能,因此,散熱性對高功率元件顯得更為重要。然而,習知的異質接面雙載子電晶體(如圖1所示),最終會再利用覆蓋該第二絕緣層142(該第二絕緣層142可為單層或多層結構,圖1中是以雙層結構為例)作為元件的保護與隔離,雖然,該第二絕緣層142可提供元件保護性,然而,因為該第二絕緣層142一般都是由導熱性較差的高分子或無機材料構成,導致影響元件的散熱性。
因此,本新型之目的,即在提供一種具有高散熱異質接面雙載子電晶體的半導體元件。
於是,本新型該具有高散熱異質接面雙載子電晶體的半導體元件包含一基板、至少一異質接面雙載子電晶體、一絕緣單元,及一散熱單元。
該至少一異質接面雙載子電晶體具有形成於該基板的一半導體單元及一電極單元,該半導體單元具有自該基板表面向上形成的一集極層、一基極層,及一射極層,該電極單元具有一設置於該集極層的集極電極、一設置於該基極層的基極電極,及一設置於該射極層的射極電極。
該絕緣單元覆蓋該基板及該至少一異質接面雙載子電晶體,以令該集極電極、基極電極,及射極電極彼此電性隔離,並分別界定出可令該集極電極、基極電極,及射極電極的部分表面露出的開口。
該散熱單元由導電散熱材料構成,覆蓋該至少一異質接面雙載子電晶體的射極電極且厚度不小於3μm。
其中,該射極電極具有一經由該開口對外延伸的電極線,且該散熱單元為覆蓋該電極線及延伸覆蓋該絕緣單元的頂面並對外裸露。
本新型之功效在於:透過將覆蓋該射極電極的絕緣材料移除令該電極線對外裸露,並改以覆蓋一層與該電極線連接,具有較大厚度且由導電散熱材料構成的散熱單元,而可有效提高異質接面雙載子電晶體的散熱效果。
在本新型被詳細描述之前,應當注意在以下的說明內容中,類似的元件是以相同的編號來表示。此外,圖式中僅為表示元件及膜層之間的空間關係,並非各元件及膜層的實質厚度、尺寸或相對比例關係。
本新型具有高散熱異質接面雙極性電晶體的半導體元件,是利用結構設計,於異質接面雙極性電晶體的頂部直接設置具有較大厚度及較大散熱面積並對外連通的散熱單元,以提電晶體整體的散熱性。特別是當該半導體元件為具有電晶體陣列的元件時,例如功率放大器,可利用將該散熱單元直接佈設於電晶體陣列上,利用全面導通連接的散熱單元可更有效的提升元件整體的散熱性。
茲以下述實施例詳細說明本新型具有高散熱異質接面雙極性電晶體的半導體元件。
參閱圖2、3,其中,圖3為圖2的其中一高散熱異質接面雙極性電晶體的局部放大結構示意圖。
本新型該具有高散熱異質接面雙極性電晶體的半導體元件的實施例,包含一基板2、多個異質接面雙載子電晶體3、一絕緣單元5,及一散熱單元6。
該基板2由半絕緣的半導體材料,例如砷化鎵(GaAs)或磷化銦(InP)所構成。
該等異質接面雙載子電晶體3成陣列排列方式間隔設置在該基板2上,圖2中僅以顯示其中3個異質接面雙載子電晶體3為例說明。
每一個異質接面雙載子電晶體3具有形成於該基板2的一半導體單元30及一電極單元40。
該半導體單元30具有自該基板2表面21依序向上形成的一集極層31、一基極層32,及一射極層33。
該集極層31、該基極層32,及該射極層33是由III-V族的半導體材料構成,該III-V族材料可為氮化鎵(GaN)、砷化鎵(GaAs)、砷化銦鎵(InGaAs)、磷化銦(InP),或磷化銦鎵(InGaP)等,且該集極層31、該基極層32,及該射極層33可以分別是單膜層或多膜層的堆疊結構。由於該集極層31、該基極層32,及該射極層33的相關材料及膜層結構為本技術領域所知悉,因此不再多加說明。
該電極單元40具有一設置在該集極層31上的集極電極41、一設置在該基極層32上的基極電極42、一設置在該射極層33上的射極電極43。該集極電極41具有自該集極層31表面依序向上的一集極電極層411及一接觸電極墊412。該基極電極42具有形成於該基極層32表面的一基極電極層421。該射極電極43具有自該射極層33表面依序向上的一射極電極層431、一接觸電極墊432,以及自該接觸電極墊432對外延伸的電極線433。該集極金屬41、基極金屬42、該射極金屬43,及該接觸電極墊412、432可選自導電性佳的金屬或合金金屬構成,且可為單層或多層結構。圖2中該集極電極41、基極電極42及該射極電極43的各結構是以單層結構表示,然實際實施時並不以此為限。
該絕緣單元5覆蓋該基板2及該等半導體單元3,以令該等半導體單元3及每一個半導體單元3的該集極電極41、基極電極42,及射極電極43彼此電性隔離,並於對應該集極電極41、基極電極42,及射極電極43的位置定義出分別令該集極電極41、基極電極42及射極電極43的表面露出的開口51。且其中,該每一個異質接面雙極性電晶體3的該電極單元40的電極線433是自該開口51對外裸露。
適用於構成該絕緣單元5的材料可選用有機或無機絕緣材料,且該絕緣單元5可視製程不同而具有不同數量的膜層結構。於本實施例中,是以該絕緣單元5具有覆蓋該半導體單元3露出之表面,以及該等集極電極41、基極電極42及射極電極43的部分頂面的多層結構氮化矽52,形成於該多層結構氮化矽52頂面的聚醯亞胺膜53、覆蓋該聚醯亞胺膜53表面並延伸覆蓋該電極線433的部分表面的氮化矽膜54,以及覆蓋該氮化矽膜54表面的聚烯烴膜55。此外,該絕緣單元5會定義出可令對應的該集極電極41、基極電極42及射極電極43的頂面露出的開口51,並可利用該聚烯烴膜55的厚度控制而令元件平坦化。
該散熱單元6由導電散熱材料構成,與該等異質接面雙極性電晶體3的射極電極43的電極線433連接並延伸覆蓋該絕緣單元5的頂面,而彼此連接成一體。其中,該散熱單元6的最小厚度不小於3μm,且遠離該基板2的表面直接對外裸露並不覆蓋絕緣材料。
較佳地,該散熱單元6的最小厚度不小於10μm,利用提升該散熱單元6的厚度,增加該散熱單元6的截面高度,而可進一步提高散熱效果。
該導電散熱材料可包含選自導熱及散熱佳的金屬或合金金屬,例如金,銅、銀、鋁的其中至少一種,可以是利用沉積或電鍍方式,而形成單層或多層堆疊結構。
於一些實施例中,該導熱散熱材料還可包含導熱添加物,例如氧化鋁、氮化鋁,或石墨烯等。
要說明的是,本實施例中是以該散熱單元6為同時覆蓋電晶體陣列為例說明,然,實際實施時,該散熱單元6也可以僅覆蓋於單一個異質接面雙極性電晶體3的射極電極43上,也可達到增加散熱的目的。
綜上所述,本新型具有高散熱異質接面雙極性電晶體的半導體元件,透過移除習知原本覆蓋在異質接面雙極性電晶體的電極線134的第二絕緣層142(如圖1所示),而令該電極線134(相當於圖2所示的電極線433)裸露。並於裸露的該電極線433(如圖2所示)上覆蓋一層具有較大厚度(最小厚度不小於3μm)且散熱面積較大的散熱單元6,因此,可有效增加散熱面積,而可避免習知因為該射極電極133被散熱性差的絕緣材料覆蓋,而影響該功率元件散熱性的缺點。特別是當該半導體元件為具有電晶體陣列的元件,例如功率放大器,可利用將該散熱單元6直接佈設於電晶體陣列上,利用全面導通連接的該散熱單元6可更有效的提升元件整體的散熱性及散熱均勻性。此外,本新型還可藉由調整該散熱單元6於z方向的高度(厚度),增加該散熱單元6的截面高度以進一步提高散熱效果,因此,可在不影響元件平面封裝尺寸的前提下,進一步增加元件整體的散熱性,確實可達成本新型之目的。
惟以上所述者,僅為本新型之實施例而已,當不能以此限定本新型實施之範圍,凡是依本新型申請專利範圍及專利說明書內容所作之簡單的等效變化與修飾,皆仍屬本新型專利涵蓋之範圍內。
2:基板
421:基極金屬層
21:表面
43:射極電極
3:異質接面雙載子電晶體
431:射極電極層
30:半導體單元
432:接觸電極墊
31:集極層
433:電極線
32:基極層
5:絕緣單元
33:射極層
51:開口
40:電極單元
52:多層結構氮化矽
41:集極電極
53:聚醯亞胺膜
411:集極金屬層
54:氮化矽膜
412:接觸電極墊
55:聚烯烴膜
42:基極電極
6:散熱單元
本新型之其他的特徵及功效,將於參照圖式的實施方式中清楚地呈現,其中:
圖1是一側視示意圖,說明現有異質接面雙載子電晶體的結構;
圖2是一側視示意圖,說明本新型具有高散熱異質接面雙載子電晶體的半導體元件的一實施例;及
圖3是一局部放大示意圖,輔助說明圖2。
2:基板
21:表面
30:半導體單元
31:集極層
32:基極層
33:射極層
40:電極單元
43:射極電極
431:射極電極層
432:接觸電極墊
433:電極線
5:絕緣單元
51:開口
52:多層結構氮化矽
41:集極電極
411:集極金屬層
412:接觸電極墊
42:基極電極
421:基極金屬層
53:聚醯亞胺膜
54:氮化矽膜
55:聚烯烴膜
6:散熱單元
Claims (7)
- 一種具有高散熱異質接面雙載子電晶體的半導體元件,包含: 一基板; 至少一異質接面雙載子電晶體,具有形成於該基板的一半導體單元及一電極單元,該半導體單元具有自該基板表面向上形成的一集極層、一基極層,及一射極層,該電極單元具有一設置於該集極層的集極電極、一設置於該基極層的基極電極,及一設置於該射極層的射極電極; 一絕緣單元,覆蓋該基板及該至少一異質接面雙載子電晶體,以令該集極電極、基極電極,及射極電極彼此電性隔離,並分別界定出可令該集極電極、基極電極,及射極電極的部分表面露出的開口;及 一散熱單元,由導電散熱材料構成,覆蓋該至少一異質接面雙載子電晶體的射極電極且最小厚度不小於3μm, 其中,該射極電極具有一經由該開口對外延伸的電極線,且該散熱單元為覆蓋該電極線及延伸覆蓋該絕緣單元的頂面並對外裸露。
- 如請求項第1項所述具有高散熱異質接面雙載子電晶體的半導體元件,包含多個呈陣列排列於該基板的異質接面雙載子電晶體,該散熱單元覆蓋並連接該等異質接面雙載子電晶體的電極線。
- 如請求項第2項所述具有高散熱異質接面雙載子電晶體的半導體元件,其中,該散熱單元覆蓋並連接該等異質接面雙載子電晶體的電極線並覆蓋該絕緣單元表面,而連接成一體。
- 如請求項第1項所述具有高散熱異質接面雙載子電晶體的半導體元件,其中,該散熱單元的頂面不覆蓋其它絕緣材料。
- 如請求項第1項所述具有高散熱異質接面雙載子電晶體的半導體元件,其中,該散熱單元的構成材料包含金、銅、銀、鋁的其中至少一種。
- 如請求項第1項所述具有高散熱異質接面雙載子電晶體的半導體元件,其中,該半導體單元是由III-V族半導體材料構成。
- 如請求項第1項所述具有高散熱異質接面雙載子電晶體的半導體元件,該集極電極、基極電極,及射極電極各自具有與該集極層、基極層,及射極層連接的集極金屬層、基極金屬層,及射極金屬層,且該射極電極的電極線是自該射極金屬層對外延伸。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109202306U TWM596973U (zh) | 2020-03-02 | 2020-03-02 | 具有高散熱異質接面雙載子電晶體的半導體元件 |
CN202021274540.6U CN212230418U (zh) | 2020-03-02 | 2020-07-03 | 具有高散热异质结双极晶体管的半导体组件 |
US17/025,958 US20210272877A1 (en) | 2020-03-02 | 2020-09-18 | Semiconductor device including heterojunction bipolar transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW109202306U TWM596973U (zh) | 2020-03-02 | 2020-03-02 | 具有高散熱異質接面雙載子電晶體的半導體元件 |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM596973U true TWM596973U (zh) | 2020-06-11 |
Family
ID=72177742
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW109202306U TWM596973U (zh) | 2020-03-02 | 2020-03-02 | 具有高散熱異質接面雙載子電晶體的半導體元件 |
Country Status (3)
Country | Link |
---|---|
US (1) | US20210272877A1 (zh) |
CN (1) | CN212230418U (zh) |
TW (1) | TWM596973U (zh) |
-
2020
- 2020-03-02 TW TW109202306U patent/TWM596973U/zh unknown
- 2020-07-03 CN CN202021274540.6U patent/CN212230418U/zh active Active
- 2020-09-18 US US17/025,958 patent/US20210272877A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
CN212230418U (zh) | 2020-12-25 |
US20210272877A1 (en) | 2021-09-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US11532736B2 (en) | Semiconductor device | |
JPWO2005024941A1 (ja) | 半導体装置 | |
US10957617B2 (en) | Semiconductor device | |
TWI750417B (zh) | 功率放大器模組 | |
US11158592B2 (en) | Semiconductor device | |
JP3084541B2 (ja) | 縦型構造トランジスタ | |
TW201842595A (zh) | 半導體晶片、半導體晶片之構裝方法及構裝有半導體晶片之模組 | |
US11948986B2 (en) | Semiconductor device | |
JP4303903B2 (ja) | 半導体装置及びその製造方法 | |
US20220384286A1 (en) | Chip package structure with heat conductive layer | |
TWM596973U (zh) | 具有高散熱異質接面雙載子電晶體的半導體元件 | |
US11652016B2 (en) | Semiconductor device | |
US20220199602A1 (en) | Dual cool power module with stress buffer layer | |
US10332805B2 (en) | Semiconductor structure with strain reduction | |
US20220190124A1 (en) | Power amplifier | |
TWI825632B (zh) | 半導體裝置 | |
JP2010056228A (ja) | 半導体装置およびその製造方法 | |
JP3072288B2 (ja) | 半導体装置 | |
TWM610056U (zh) | 高導熱性場效電晶體元件 | |
TW202341283A (zh) | 半導體裝置及其製造方法 | |
JP2000100937A (ja) | 半導体装置 | |
JP2012028691A (ja) | 半導体装置 |