TWM594179U - Vapor chamber - Google Patents

Vapor chamber Download PDF

Info

Publication number
TWM594179U
TWM594179U TW109200416U TW109200416U TWM594179U TW M594179 U TWM594179 U TW M594179U TW 109200416 U TW109200416 U TW 109200416U TW 109200416 U TW109200416 U TW 109200416U TW M594179 U TWM594179 U TW M594179U
Authority
TW
Taiwan
Prior art keywords
metal layer
plate
thickness
lower plate
upper plate
Prior art date
Application number
TW109200416U
Other languages
Chinese (zh)
Inventor
陳志偉
張天曜
郭哲瑋
簡梓芸
Original Assignee
雙鴻科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 雙鴻科技股份有限公司 filed Critical 雙鴻科技股份有限公司
Priority to TW109200416U priority Critical patent/TWM594179U/en
Publication of TWM594179U publication Critical patent/TWM594179U/en

Links

Images

Landscapes

  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The present utility model provides a vapor chamber including an upper plate and a lower plate. The upper plate includes a first metal layer and a second metal layer having different materials. The lower plate is attached to the upper plate. The first metal layer and the second metal layer of the upper plate are subjected to press working, so that the first metal layer and the second metal layer are simultaneously deformed to form at least one supporting structure and a first skirt structure, the upper plate defines a working space by the first skirt structure being attached to the lower plate, and at least one supporting structure is located in the working space.

Description

均溫板 Even temperature plate

本創作關於一種散熱裝置,尤其是關於一種均溫板。 This creation is about a heat dissipation device, especially about a temperature equalizing plate.

均溫板(Vapor chamber)是一種散熱裝置,其工作原理與熱管相近,差異在於熱管的導熱為一維方向上線的傳遞,均溫板則為二維方向上面的傳遞。均溫板在結構上,主要係由上板體、下板體以及作用空間所組成,當下板體與熱源例如發熱的電子元件接觸後,作用空間內的工作介質便會由液態轉換為氣態並往上板體方向傳遞,最後藉由均溫板上除了接觸熱源以外的區域或均溫板外側的散熱裝置例如鰭片而將熱能傳遞出去,此時,工作介質會轉換回液態而回到下板體,重新下一次的循環。 Vapor chamber is a heat dissipation device. Its working principle is similar to that of heat pipe. The difference is that the heat conduction of the heat pipe is the transmission in the one-dimensional direction, and the temperature even plate is the transmission in the two-dimensional direction. The temperature equalizing plate is mainly composed of an upper plate body, a lower plate body and an action space. When the lower plate body is in contact with a heat source such as a heat-generating electronic component, the working medium in the action space will be converted from a liquid state to a gaseous state. Transfer to the direction of the upper plate body, and finally transfer the heat energy through the area other than the heat source on the temperature equalizing plate or the heat dissipation device outside the temperature equalizing plate, such as fins. At this time, the working medium will be converted back to the liquid state and return to the bottom The board body, restart the next cycle.

由於智慧型手機、平板電腦或是小型的筆記型電腦等手持式電子裝置為目前市場上的主流商品,而上述這些手持式電子裝置主要是使用薄型的均溫板來達成內部電子元件散熱的目的,但由於薄型的均溫板容易發生變形的情況,特別是在進行組裝作業中,將均溫板貼附熱源的時候,因此,要如何提升均溫板在結構上的強度,同時又不會妨礙到均溫板的正常運作,實為本領域相關人員所關注的焦點。 Since handheld electronic devices such as smartphones, tablets, or small notebook computers are the mainstream products on the market, these handheld electronic devices mainly use thin temperature-averaging plates to achieve the purpose of heat dissipation of internal electronic components. However, due to the fact that the thin uniform temperature plate is prone to deformation, especially when the uniform temperature plate is attached to the heat source during the assembly operation, how to improve the structural strength of the uniform temperature plate, while not Obstructing the normal operation of the temperature equalizing plate is indeed the focus of the relevant personnel in the field.

本創作的目的之一在於提供一種均溫板,其上板與下板主要是由至少兩種不同材質金屬所完成的複合金屬板,並透過沖壓加工或 蝕刻加工直接於上板或下板形成支撐結構與裙邊結構,如此能夠確保均溫板正常運作的同時,提高其結構強度和使用可靠性。 One of the purposes of this creation is to provide a temperature-equalizing plate, the upper and lower plates of which are mainly composite metal plates made of at least two different materials of metal, and are processed by stamping or The etching process directly forms the support structure and the skirt structure on the upper or lower plate, so as to ensure the normal operation of the temperature equalizing plate and improve its structural strength and reliability of use.

本創作的其他目的和優點可以從本創作所揭露的技術特徵中得到進一步的了解。 The other purposes and advantages of this creation can be further understood from the technical features disclosed in this creation.

為達上述之一或部分或全部目的或是其他目的,本創作提供一種均溫板,包括上板以及下板。上板包括材質不同的第一金屬層與第二金屬層。下板貼合於上板。其中,於上板的第一金屬層與第二金屬層進行沖壓加工,使得第一金屬層與第二金屬層同時產生形變而形成至少支撐結構以及第一裙邊結構,上板藉由第一裙邊結構貼合於下板而定義出作用空間,至少一支撐結構係位於作用空間內。 In order to achieve one, some or all of the above purposes or other purposes, this creation provides a temperature equalization plate, including an upper plate and a lower plate. The upper plate includes a first metal layer and a second metal layer with different materials. The lower plate is attached to the upper plate. Wherein, the first metal layer and the second metal layer of the upper plate are stamped, so that the first metal layer and the second metal layer are deformed at the same time to form at least the support structure and the first skirt structure. The skirt structure is attached to the lower plate to define an action space, and at least one support structure is located in the action space.

在本創作的一實施例中,上述的上板的第一金屬層與第二金屬層以擴散接合的方式彼此接合。 In an embodiment of the present creation, the first metal layer and the second metal layer of the upper plate are bonded to each other by diffusion bonding.

在本創作的一實施例中,上述的下板包括材質不同的第三金屬層與第四金屬層,並於第三金屬層進行蝕刻加工而於第三金屬層上形成第二裙邊結構,下板藉由第二裙邊結構貼合於上板的第一裙邊結構而定義出作用空間。 In an embodiment of the present creation, the above lower plate includes a third metal layer and a fourth metal layer with different materials, and the third metal layer is etched to form a second skirt structure on the third metal layer, The lower board defines the working space by the second skirt structure being attached to the first skirt structure of the upper board.

在本創作的一實施例中,上述的下板的第三金屬層與第四金屬層以擴散接合的方式彼此接合。 In an embodiment of the present creation, the third metal layer and the fourth metal layer of the lower plate described above are bonded to each other by diffusion bonding.

在本創作的一實施例中,上述的第一裙邊結構界定出第一空間,第二裙邊結構界定出第二空間,作用空間包括第一空間與第二空間。 In an embodiment of the present creation, the above-mentioned first skirt structure defines a first space, the second skirt structure defines a second space, and the function space includes a first space and a second space.

在本創作的一實施例中,於下板的第三金屬層上形成毛細結構,毛細結構位於作用空間內,且至少一支撐結構接觸於毛細結構。 In an embodiment of the present invention, a capillary structure is formed on the third metal layer of the lower plate, the capillary structure is located in the action space, and at least one supporting structure is in contact with the capillary structure.

在本創作的一實施例中,上述的第一金屬層位於第二金屬層與第三金屬層之間,第二金屬層的厚度大於或等於四分之一第一金屬層的厚度,且第二金屬層的厚度小於或等於三分之一第一金屬層的厚度,第三金屬層位於第一金屬層與第四金屬層之間,第四金屬層的厚度大於或等於四分之一第三金屬層的厚度,且第四金屬層的厚度小於或等於三分之一第三金屬層的厚度。 In an embodiment of the present invention, the above-mentioned first metal layer is located between the second metal layer and the third metal layer, the thickness of the second metal layer is greater than or equal to a quarter of the thickness of the first metal layer, and the The thickness of the second metal layer is less than or equal to one-third of the thickness of the first metal layer, the third metal layer is located between the first metal layer and the fourth metal layer, and the thickness of the fourth metal layer is greater than or equal to one-quarter The thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer.

在本創作的一實施例中,上述的第二金屬層的金屬強度大於第一金屬層的金屬強度,第四金屬層的金屬強度大於第三金屬層的金屬強度。 In an embodiment of the invention, the metal strength of the second metal layer is greater than the metal strength of the first metal layer, and the metal strength of the fourth metal layer is greater than the metal strength of the third metal layer.

本創作另一方面提供一種均溫板,包括上板以及下板。上板包括材質不同的第一金屬層與第二金屬層。下板貼合於上板。其中,於上板的第一金屬層進行沖壓加工,使得第一金屬層產生形變而形成至少一支撐結構以及第一裙邊結構,上板藉由第一裙邊結構貼合於下板而定義出作用空間,至少一支撐結構係位於作用空間內。 Another aspect of this creation is to provide a temperature equalizing plate, including an upper plate and a lower plate. The upper plate includes a first metal layer and a second metal layer with different materials. The lower plate is attached to the upper plate. Among them, the first metal layer of the upper plate is punched to deform the first metal layer to form at least one support structure and a first skirt structure. The upper plate is defined by the first skirt structure being attached to the lower plate Out of the working space, at least one supporting structure is located in the working space.

本創作另一方面提供一種均溫板,包括上板以及下板。上板包括材質不同的第一金屬層與第二金屬層。下板包括材質不同的第三金屬層與第四金屬層。其中,於上板的第一金屬層與第二金屬層進行沖壓加工,使得第一金屬層與第二金屬層同時產生形變而形成第一裙邊結構。其中,於下板的第三金屬層進行蝕刻加工而於第三金屬層上形成第二裙邊結構以及至少一支撐結構,下板藉由第二裙邊結構貼合於上板的第一裙邊結構而定義出作用空間,至少一支撐結構係位於作用空間內。 Another aspect of this creation is to provide a temperature equalizing plate, including an upper plate and a lower plate. The upper plate includes a first metal layer and a second metal layer with different materials. The lower plate includes a third metal layer and a fourth metal layer with different materials. Wherein, the first metal layer and the second metal layer on the upper plate are punched, so that the first metal layer and the second metal layer are simultaneously deformed to form a first skirt structure. Wherein, the third metal layer of the lower plate is etched to form a second skirt structure and at least one supporting structure on the third metal layer, and the lower plate is attached to the first skirt of the upper plate by the second skirt structure The side structure defines the working space, and at least one supporting structure is located in the working space.

為讓本創作之上述和其他目的、特徵和優點能更明顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細說明如下。 In order to make the above and other purposes, features and advantages of this creation more obvious and understandable, the following is a detailed description of the preferred embodiments and the accompanying drawings.

1、2、3‧‧‧均溫板 1, 2, 3 ‧‧‧ temperature plate

11、21、31‧‧‧上板 11, 21, 31

12、22、32‧‧‧下板 12, 22, 32

111、211、311‧‧‧第一金屬層 111, 211, 311‧‧‧ First metal layer

112、212、312‧‧‧第二金屬層 112, 212, 312‧‧‧Second metal layer

121、221、321‧‧‧第三金屬層 121, 221, 321‧‧‧ third metal layer

122、222、322‧‧‧第四金屬層 122, 222, 322‧‧‧ Fourth metal layer

113、213、323‧‧‧支撐結構 113, 213, 323‧‧‧ support structure

114、214、313‧‧‧第一裙邊結構 114, 214, 313‧‧‧ First skirt structure

123、324‧‧‧第二裙邊結構 123、324‧‧‧Second skirt structure

223‧‧‧裙邊結構 223‧‧‧Skirt structure

124、224、314‧‧‧毛細結構 124, 224, 314‧‧‧ capillary structure

M1、M2‧‧‧模具 M1, M2‧‧‧mold

S1‧‧‧第一空間 S1‧‧‧First Space

S2‧‧‧第二空間 S2‧‧‧Second Space

WS、WS’、WS”‧‧‧作用空間 WS, WS’, WS”‧‧‧

圖1為本創作一實施例所述的均溫板的剖面示意圖; FIG. 1 is a schematic cross-sectional view of a temperature equalizing plate according to an embodiment of the creation;

圖2A至圖2F為圖1所示的均溫板的製造流程示意圖; 2A to 2F are schematic diagrams of the manufacturing process of the temperature equalizing board shown in FIG. 1;

圖3為本創作另一實施例所述的均溫板的剖面示意圖; 3 is a schematic cross-sectional view of a temperature-sharing plate according to another embodiment of the creation;

圖4為本創作又一實施例所述的均溫板的剖面示意圖; 4 is a schematic cross-sectional view of a temperature equalizing plate according to another embodiment of the creation;

圖5A至圖5F為圖4所示的均溫板的製造流程示意圖。 5A to 5F are schematic diagrams of the manufacturing process of the temperature equalizing board shown in FIG. 4.

請參閱圖1,其為本創作一實施例所述的均溫板的剖面示意圖。如圖1所示,本實施例的均溫板1包括上板11以及下板12。上板11包括材質不同的第一金屬層111與第二金屬層112。下板12貼合於上板11。在本實施例中,上板11具有多個朝向下板12的方向延伸的支撐結構113以及第一裙邊結構114,這些支撐結構113彼此間隔排列,且上板11藉由第一裙邊結構114貼合於下板12,並與下板12之間定義出作用空間WS,而上述這些支撐結構113位於作用空間WS內,且作用空間WS內填充有工作介質。具體而言,上板11的這些支撐結構113與第一裙邊結構114是經由沖壓加工而形成,也就是於上板11的第一金屬層111與第二金屬層112進行沖壓加工,使得第一金屬層111與第二金屬層112同時產生形變而形成朝向下板12的方向延伸的這些支撐結構113以及第一裙邊結構114。而有關於均溫板1的散熱原理與作動係為熟知本技藝人士所知悉,故在此即不再予以贅述。 Please refer to FIG. 1, which is a schematic cross-sectional view of a temperature equalizing board according to an embodiment of the invention. As shown in FIG. 1, the temperature equalizing plate 1 of this embodiment includes an upper plate 11 and a lower plate 12. The upper plate 11 includes a first metal layer 111 and a second metal layer 112 of different materials. The lower plate 12 is attached to the upper plate 11. In this embodiment, the upper plate 11 has a plurality of support structures 113 extending toward the lower plate 12 and a first skirt structure 114, the support structures 113 are arranged at intervals from each other, and the upper plate 11 is passed through the first skirt structure 114 is attached to the lower plate 12 and defines a working space WS with the lower plate 12, and the above support structures 113 are located in the working space WS, and the working space WS is filled with working medium. Specifically, the support structures 113 and the first skirt structure 114 of the upper plate 11 are formed by stamping, that is, the first metal layer 111 and the second metal layer 112 of the upper plate 11 are stamped, so that the first A metal layer 111 and a second metal layer 112 are simultaneously deformed to form the supporting structures 113 and the first skirt structure 114 extending toward the lower plate 12. The heat dissipation principle and operating system of the temperature equalizing plate 1 are known to those skilled in the art, so they will not be repeated here.

以下再針對本創作實施例的均溫板1的詳細構造做更進一步的描述。 The detailed structure of the temperature equalizing plate 1 of this creative embodiment will be further described below.

如圖1所示,本實施例的下板12包括材質不同的第三金屬層121與第四金屬層122。在本實施例中,下板12具有第二裙邊結構123,下板12藉由第二裙邊結構123貼合於上板11的第一裙邊結構114,並與上板11之間定義出上述的作用空間WS。具體而言,下板12的第二裙邊結構123是經由蝕刻加工而形成,也就是於下板12的第三金屬層121上進行蝕刻加工而於第三金屬層121形成上述的第二裙邊結構123。 As shown in FIG. 1, the lower plate 12 of this embodiment includes a third metal layer 121 and a fourth metal layer 122 of different materials. In this embodiment, the lower plate 12 has a second skirt structure 123, and the lower plate 12 is attached to the first skirt structure 114 of the upper plate 11 by the second skirt structure 123 and defined between the upper plate 11 Out of the above-mentioned function space WS. Specifically, the second skirt structure 123 of the lower plate 12 is formed by etching, that is, the third metal layer 121 of the lower plate 12 is etched to form the above-mentioned second skirt on the third metal layer 121边结构123.

如圖1所示,當上板11的第一金屬層111與第二金屬層112進行沖壓加工而形成多個支撐結構113以及第一裙邊結構114時,第一裙邊結構114會於上板11的下方界定出第一空間S1,也就是第一裙邊結構114與相鄰的支撐結構113之間的空間以及任兩個相鄰支撐結構113之間的空間。當下板12的第三金屬層121進行蝕刻加工而形成第二裙邊結構123時,第二裙邊結構123會於下板12的上方界定出第二空間S2。當上板11的第一裙邊結構114與下板12的第二裙邊結構123彼此貼合後,兩者之間所定義出的作用空間WS包括上述的第一空間S1與第二空間S2,也就是第一空間S1與第二空間S2結合後組成了完整的作用空間WS。 As shown in FIG. 1, when the first metal layer 111 and the second metal layer 112 of the upper plate 11 are stamped to form a plurality of support structures 113 and a first skirt structure 114, the first skirt structure 114 will be on top The first space S1 is defined below the plate 11, that is, the space between the first skirt structure 114 and the adjacent support structure 113 and the space between any two adjacent support structures 113. When the third metal layer 121 of the lower plate 12 is etched to form the second skirt structure 123, the second skirt structure 123 defines a second space S2 above the lower plate 12. When the first skirt structure 114 of the upper board 11 and the second skirt structure 123 of the lower board 12 are attached to each other, the working space WS defined between the two includes the above-mentioned first space S1 and second space S2 , That is, the first space S1 and the second space S2 are combined to form a complete working space WS.

如圖1所示,本實施例的下板12更包括毛細結構124。毛細結構124形成於下板12的第三金屬層121上,且毛細結構124位於作用空間WS內,而從上板11延伸而出的這些支撐結構113接觸於毛細結構124。具體而言,當下板12的第三金屬層121經由蝕刻加工而形成第二裙邊結構123後,第二裙邊結構123於下板12的上方界定出第二空間S2,此時,形成毛細結構124於下板12的第二空間S2內,當上板11的第一裙邊結構114與下板12的第二裙邊結構123彼此貼合後,從上板11延伸而出的這些支撐結構113接觸於毛細結構124。 As shown in FIG. 1, the lower plate 12 of this embodiment further includes a capillary structure 124. The capillary structure 124 is formed on the third metal layer 121 of the lower plate 12, and the capillary structure 124 is located in the working space WS, and the support structures 113 extending from the upper plate 11 are in contact with the capillary structure 124. Specifically, after the third metal layer 121 of the lower plate 12 is etched to form the second skirt structure 123, the second skirt structure 123 defines a second space S2 above the lower plate 12, at this time, the capillary is formed The structure 124 is located in the second space S2 of the lower plate 12. When the first skirt structure 114 of the upper plate 11 and the second skirt structure 123 of the lower plate 12 are attached to each other, these supports extending from the upper plate 11 The structure 113 contacts the capillary structure 124.

如圖1所示,本實施例的第一金屬層111位於第二金屬層112與下板12的第三金屬層121之間,也就是第一金屬層111為上板11的內側金屬層,第二金屬層112為上板11的外側金屬層,在本實施例中,第二金屬層112的厚度例如是大於或等於四分之一的第一金屬層111的厚度且小於或等於三分之一的第一金屬層111的厚度,也就是上板11的外側金屬層的厚度會小於內側金屬層的厚度,且第二金屬層112的金屬強度大於第一金屬層111的強度。本實施例的第三金屬層121位於第四金屬層122與上板11的第一金屬層111之間,也就是第三金屬層121為下板12的內側金屬層,第四金屬層122為下板12的外側金屬層,在本實施例中,第四金屬層122的厚度例如是大於或等於四分之一的第三金屬層121的厚度且小於或等於三分之一的第三金屬層121的厚度,也是下板12的外側金屬層的厚度會小於內側金屬層的厚度,且第四金屬層122的金屬強度大於第三金屬層121的強度。此外,第一金屬層111與第二金屬層112例如是以擴散接合的方式彼此接合,藉以構成複合金屬層結構的上板11,同理,第三金屬層121與第四金屬層122例如是以擴散接合的方式彼此接合,藉以構成複合金屬層結構的下板12。 As shown in FIG. 1, the first metal layer 111 of this embodiment is located between the second metal layer 112 and the third metal layer 121 of the lower plate 12, that is, the first metal layer 111 is the inner metal layer of the upper plate 11, The second metal layer 112 is an outer metal layer of the upper plate 11. In this embodiment, the thickness of the second metal layer 112 is, for example, greater than or equal to one-quarter of the thickness of the first metal layer 111 and less than or equal to three-thirds One of the thicknesses of the first metal layer 111, that is, the thickness of the outer metal layer of the upper plate 11 is smaller than the thickness of the inner metal layer, and the metal strength of the second metal layer 112 is greater than that of the first metal layer 111. The third metal layer 121 of this embodiment is located between the fourth metal layer 122 and the first metal layer 111 of the upper plate 11, that is, the third metal layer 121 is the inner metal layer of the lower plate 12, and the fourth metal layer 122 is The outer metal layer of the lower plate 12, in this embodiment, the thickness of the fourth metal layer 122 is, for example, greater than or equal to a quarter of the thickness of the third metal layer 121 and less than or equal to one third of the third metal The thickness of the layer 121 is also that the thickness of the outer metal layer of the lower plate 12 is smaller than the thickness of the inner metal layer, and the metal strength of the fourth metal layer 122 is greater than the strength of the third metal layer 121. In addition, the first metal layer 111 and the second metal layer 112 are bonded to each other by diffusion bonding, for example, to form the upper plate 11 of the composite metal layer structure. Similarly, the third metal layer 121 and the fourth metal layer 122 are, for example, The lower plates 12 of the composite metal layer structure are formed by diffusion bonding.

需特別說明的是,上板11的第一金屬層111與第二金屬層112以及下板12的第三金屬層121與第四金屬層122的材質可選自鈦、鎳、銅、鋼的其中之一,在外層金屬層(第二金屬層112與第四金屬層122)的金屬強度大於內層金屬層(第一金屬層111與第三金屬層121)的強度的前提下,上述的金屬層的材質皆可任意置換,在本實施例中,外層金屬層(第二金屬層112與第四金屬層122)例如是採用鎳,內層金屬層(第一金屬層111與第三金屬層121)例如是採用銅。再者,本創作並不 加以限定第一金屬層111與第二金屬層112之間的接合方式以及第三金屬層121與第四金屬層122之間的接合方式,第一金屬層111與第二金屬層112之間的接合方式以及第三金屬層121與第四金屬層122之間的接合方式可根據實際情況的需求而有所改變。此外,上述衡量金屬強度的標準選自楊氏係數、維氏硬度的其中之一。 It should be noted that the materials of the first metal layer 111 and the second metal layer 112 of the upper plate 11 and the third metal layer 121 and the fourth metal layer 122 of the lower plate 12 may be selected from titanium, nickel, copper, and steel One of them is that the metal strength of the outer metal layer (the second metal layer 112 and the fourth metal layer 122) is greater than the strength of the inner metal layer (the first metal layer 111 and the third metal layer 121). The material of the metal layer can be arbitrarily replaced. In this embodiment, the outer metal layer (the second metal layer 112 and the fourth metal layer 122) is, for example, nickel, and the inner metal layer (the first metal layer 111 and the third metal) The layer 121) is made of copper, for example. Furthermore, this creation does not The bonding method between the first metal layer 111 and the second metal layer 112 and the bonding method between the third metal layer 121 and the fourth metal layer 122 are defined. The bonding method and the bonding method between the third metal layer 121 and the fourth metal layer 122 can be changed according to actual needs. In addition, the above standard for measuring the strength of the metal is selected from one of the Young's coefficient and the Vickers hardness.

請參閱圖2A至圖2F,其為圖1所示的均溫板的製造流程示意圖。如圖2A所示,提供由第一金屬層111與第二金屬層112複合而成的上板11;然後,如圖2B所示,藉由模具M1於第一金屬層111與第二金屬層112進行沖壓加工而形成多個支撐結構113以及第一裙邊結構114;然後,如圖2C所示,提供由第三金屬層121與第四金屬層122複合而成的下板12;然後,如圖2D所示,於第三金屬層121進行蝕刻加工而於第三金屬層121形成第二裙邊結構123;然後,如圖2E所示,於第三金屬層121的第二空間S2內形成毛細結構124;然後,如圖2F所示,上板11的第一裙邊結構114貼合於下板12的第二裙邊結構123以形成如圖1所示的均溫板1結構。 Please refer to FIGS. 2A to 2F, which are schematic diagrams of the manufacturing process of the temperature equalizing board shown in FIG. As shown in FIG. 2A, an upper plate 11 composed of a first metal layer 111 and a second metal layer 112 is provided; then, as shown in FIG. 2B, the first metal layer 111 and the second metal layer are formed by a mold M1 112 is punched to form a plurality of support structures 113 and a first skirt structure 114; then, as shown in FIG. 2C, a lower plate 12 composed of a third metal layer 121 and a fourth metal layer 122 is provided; then, As shown in FIG. 2D, an etching process is performed on the third metal layer 121 to form a second skirt structure 123 on the third metal layer 121; then, as shown in FIG. 2E, in the second space S2 of the third metal layer 121 A capillary structure 124 is formed; then, as shown in FIG. 2F, the first skirt structure 114 of the upper plate 11 is attached to the second skirt structure 123 of the lower plate 12 to form the temperature-averaging plate 1 structure shown in FIG.

需特別說明的是,圖2A至圖2F所示的均溫板製造流程順序僅為本創作的其中之一實施方式,本創作並不加以限定上述均溫板製造流程的順序,舉例來說,上述圖2C至圖2E的步驟可以在圖2A至圖2B的步驟之前先行完成,也就是先行完成下板12的製作(如對第三金屬層121進行蝕刻加工以及形成毛細結構124)再進行上板11的製作(如同時對第一金屬層111與第二金屬層112進行沖壓加工),也就是說,上板11與下板12的製作是兩個分別獨立的製程,兩者之間完成的先後順序並不會影響到後續上板11貼合下板12的步驟(如圖2F)。 It should be noted that the manufacturing process sequence of the temperature equalizing board shown in FIGS. 2A to 2F is only one of the embodiments of this creation, and this creation does not limit the order of the manufacturing process of the above temperature equalizing board. For example, The above steps of FIGS. 2C to 2E can be completed before the steps of FIGS. 2A to 2B, that is, the manufacturing of the lower plate 12 (such as etching the third metal layer 121 and forming the capillary structure 124) can be performed first. The production of the board 11 (such as the simultaneous punching of the first metal layer 111 and the second metal layer 112), that is to say, the production of the upper board 11 and the lower board 12 are two separate processes, which are completed between the two The sequence does not affect the subsequent steps of attaching the upper board 11 to the lower board 12 (see FIG. 2F).

請參閱圖3,其為本創作另一實施例所述的均溫板的剖面示意圖。如圖3所示,本實施例的均溫板2包括上板21以及下板22。上板21包括材質不同的第一金屬層211與第二金屬層212。下板22包括材質不同的第三金屬層221與第四金屬層222,且下板22貼合於上板21。在本實施例中,上板21具有多個朝向下板22的方向延伸的支撐結構213,這些支撐結構213彼此間隔排列,且上板21藉由第二金屬層212貼合於下板22,並與下板22之間定義出作用空間WS’,而上述這些支撐結構213位於作用空間WS’內,且作用空間WS’內填充有工作介質。下板22具有裙邊結構223,下板22藉由裙邊結構223貼合於上板21的第二金屬層212,並與上板11之間定義出上述的作用空間WS’,也就是說,在本實施例中,作用空間WS’是直接由下板22的裙邊結構223所定義。 Please refer to FIG. 3, which is a schematic cross-sectional view of a temperature equalizing plate according to another embodiment of the creation. As shown in FIG. 3, the temperature equalizing plate 2 of this embodiment includes an upper plate 21 and a lower plate 22. The upper plate 21 includes a first metal layer 211 and a second metal layer 212 of different materials. The lower plate 22 includes a third metal layer 221 and a fourth metal layer 222 of different materials, and the lower plate 22 is attached to the upper plate 21. In this embodiment, the upper plate 21 has a plurality of support structures 213 extending toward the lower plate 22. The support structures 213 are arranged at intervals, and the upper plate 21 is attached to the lower plate 22 by the second metal layer 212. A working space WS' is defined with the lower plate 22, and the above support structures 213 are located in the working space WS', and the working space WS' is filled with working medium. The lower plate 22 has a skirt structure 223, and the lower plate 22 is attached to the second metal layer 212 of the upper plate 21 by the skirt structure 223, and defines the above-mentioned working space WS' with the upper plate 11, that is to say In this embodiment, the working space WS′ is directly defined by the skirt structure 223 of the lower plate 22.

承上述說明,本實施例所述的均溫板2與圖1所示的均溫板1的差異處在於,在本實施例中,僅對於內側的第一金屬層211進行沖壓加工,而不對外側的第二金屬層212進行沖壓加工,使得僅有第一金屬層211產生形變而形成朝向下板22的方向延伸的這些支撐結構213。除了上述差異,本實施例的均溫板2的其它細部結構,如下板22的裙邊結構223是蝕刻加工而成以及形成於下板22的第三金屬層221上的毛細結構224等,與圖1所示的均溫板1類似,故在本段即不再予以贅述。此外,本實施例的均溫板2的製造流程與圖2A至圖2F所示的製造流程類似,差別僅在於第一金屬層211與第二金屬層212接合組成上板21前,先行對第一金屬層211進行沖壓加工。 According to the above description, the difference between the temperature equalizing plate 2 described in this embodiment and the temperature equalizing plate 1 shown in FIG. 1 lies in that, in this embodiment, only the inner first metal layer 211 is stamped, but not The outer second metal layer 212 is stamped, so that only the first metal layer 211 is deformed to form these support structures 213 extending toward the lower plate 22. In addition to the above differences, the other detailed structure of the temperature equalizing plate 2 of this embodiment, the skirt structure 223 of the following plate 22 is etched and the capillary structure 224 formed on the third metal layer 221 of the lower plate 22, and The temperature equalizing plate 1 shown in FIG. 1 is similar, so it will not be repeated in this paragraph. In addition, the manufacturing process of the temperature equalizing plate 2 of this embodiment is similar to the manufacturing process shown in FIGS. 2A to 2F, the only difference is that before the first metal layer 211 and the second metal layer 212 are joined to form the upper plate 21, the first A metal layer 211 is punched.

請參閱圖4,其為本創作又一實施例所述的均溫板的剖面示意圖。如圖4所示,本實施例的均溫板3包括上板31以及下板32。上板 31包括材質不同的第一金屬層311與第二金屬層312。下板32包括材質不同的第三金屬層321與第四金屬層322。在本實施例中,上板31具有第一裙邊結構313。下板32具有多個朝向上板31方向延伸的支撐結構323以及第二裙邊結構324,這些支撐結構323彼此間隔排列,且下板32藉由第二裙邊結構324貼合於上板31的第一裙邊結構313,上板31與下板32之間定義出作用空間WS”,而上述這些支撐結構323位於作用空間WS”內,且作用空間WS”內填充有工作介質。 Please refer to FIG. 4, which is a schematic cross-sectional view of a temperature equalizing board according to another embodiment of the creation. As shown in FIG. 4, the temperature equalizing plate 3 of this embodiment includes an upper plate 31 and a lower plate 32. On board 31 includes a first metal layer 311 and a second metal layer 312 of different materials. The lower plate 32 includes a third metal layer 321 and a fourth metal layer 322 with different materials. In this embodiment, the upper plate 31 has a first skirt structure 313. The lower plate 32 has a plurality of support structures 323 extending toward the upper plate 31 and a second skirt structure 324. The support structures 323 are arranged at intervals from each other, and the lower plate 32 is attached to the upper plate 31 by the second skirt structure 324 In the first skirt structure 313, the working space WS" is defined between the upper plate 31 and the lower plate 32, and the above support structures 323 are located in the working space WS", and the working space WS" is filled with working medium.

承上述說明,本實施例的均溫板3與圖1所示的均溫板1的差異處在於,在本實施例中,上板31的第一裙邊結構313是經由沖壓加工而形成,也就是於上板31的第一金屬層311與第二金屬層312進行沖壓加工,使得第一金屬層311與第二金屬層312同時產生形變而形成第一裙邊結構313。下板32的這些支撐結構323與第二裙邊結構324是經由蝕刻加工而形成,也就是於下板32的第三金屬層321進行蝕刻加工而於第三金屬層321上形成這些支撐結構323與第二裙邊結構324。此外,本實施例的上板31更包括毛細結構314。毛細結構314形成於上板31的第一金屬層311上,且毛細結構314位於作用空間WS”內(也就是第一裙邊結構313所定義出的第一空間S1內),而從下板32延伸而出的這些支撐結構323接觸於毛細結構314。除了上述差異,本實施例的均溫板3的其它細部結構與圖1所示的均溫板1類似,故在本段即不再予以贅述。 According to the above description, the difference between the temperature equalizing plate 3 of this embodiment and the temperature equalizing plate 1 shown in FIG. 1 is that in this embodiment, the first skirt structure 313 of the upper plate 31 is formed by stamping, That is, the first metal layer 311 and the second metal layer 312 of the upper plate 31 are stamped, so that the first metal layer 311 and the second metal layer 312 are simultaneously deformed to form the first skirt structure 313. The support structures 323 and the second skirt structure 324 of the lower plate 32 are formed by etching, that is, the third metal layer 321 of the lower plate 32 is etched to form the support structures 323 on the third metal layer 321 The second skirt structure 324. In addition, the upper plate 31 of this embodiment further includes a capillary structure 314. The capillary structure 314 is formed on the first metal layer 311 of the upper plate 31, and the capillary structure 314 is located in the active space WS″ (that is, in the first space S1 defined by the first skirt structure 313), and from the lower plate The support structures 323 extending from 32 are in contact with the capillary structure 314. In addition to the above differences, the other details of the temperature equalizing plate 3 of this embodiment are similar to the temperature equalizing plate 1 shown in FIG. Repeat them.

請參閱圖5A至圖5F,其為圖4所示的均溫板的製造流程示意圖。如圖5A所示,提供由第一金屬層311與第二金屬層312複合而成的上板31;然後,如圖5B所示,藉由模具M2於第一金屬層311與第二金屬層312進行沖壓加工而形成第一裙邊結構313;然後,如圖5C所示, 提供由第三金屬層321與第四金屬層322複合而成的下板32;然後,如圖5D所示,於第三金屬層321進行蝕刻加工而於第三金屬層321形成多個支撐結構323以及第二裙邊結構324;然後,如圖5E所示,於第一金屬層311的第一空間S1內形成毛細結構314;然後,如圖5F所示,上板31的第一裙邊結構313貼合於下板32的第二裙邊324以形成如圖4所示的均溫板3結構。 Please refer to FIG. 5A to FIG. 5F, which are schematic diagrams of the manufacturing process of the temperature equalizing board shown in FIG. 4. As shown in FIG. 5A, an upper plate 31 composed of a first metal layer 311 and a second metal layer 312 is provided; then, as shown in FIG. 5B, the first metal layer 311 and the second metal layer are formed by a mold M2 312 is punched to form the first skirt structure 313; then, as shown in FIG. 5C, Provide the lower plate 32 composed of the third metal layer 321 and the fourth metal layer 322; then, as shown in FIG. 5D, the third metal layer 321 is etched to form a plurality of support structures on the third metal layer 321 323 and the second skirt structure 324; then, as shown in FIG. 5E, a capillary structure 314 is formed in the first space S1 of the first metal layer 311; then, as shown in FIG. 5F, the first skirt of the upper plate 31 The structure 313 is attached to the second skirt 324 of the lower plate 32 to form the temperature equalizing plate 3 structure shown in FIG. 4.

需特別說明的是,圖5A至圖5F所示的均溫板製造流程順序僅為本創作的其中之一實施方式,本創作並不加以限定上述均溫板製造流程的順序,舉例來說,上述圖5C至圖5D的步驟可以在圖5A至圖5B的步驟之前先行完成,也就是先行完成下板32的製作(如對第三金屬層321進行蝕刻加工)再進行上板31的製作(如同時對第一金屬層311與第二金屬層312進行沖壓加工),也就是說,上板31與下板32的製作是兩個分別獨立的製程,兩者之間完成的先後順序並不會影響到後續上板31貼合下板32的步驟(如圖5F)。 It should be noted that the manufacturing process sequence of the temperature equalizing board shown in FIGS. 5A to 5F is only one of the embodiments of this creation, and this creation does not limit the order of the manufacturing process of the above temperature equalizing board. For example, The above steps of FIGS. 5C to 5D can be completed before the steps of FIGS. 5A to 5B, that is, the manufacturing of the lower plate 32 (such as etching the third metal layer 321) is performed before the manufacturing of the upper plate 31 ( (For example, the first metal layer 311 and the second metal layer 312 are stamped at the same time), that is to say, the production of the upper plate 31 and the lower plate 32 are two separate processes, and the order of completion between the two is not This will affect the subsequent steps of attaching the upper plate 31 to the lower plate 32 (see FIG. 5F).

綜上所述,本創作實施例的均溫板,其上板與下板主要是由至少兩種不同材質金屬所完成的複合金屬板,並透過沖壓加工或蝕刻加工直接於上板或下板形成支撐結構與裙邊結構,如此能夠確保均溫板正常運作的同時,提高其結構強度和使用可靠性。 In summary, in the temperature-averaged plate of this creative embodiment, the upper plate and the lower plate are mainly composite metal plates made of at least two different materials of metal, and are directly stamped or etched on the upper plate or the lower plate The support structure and the skirt structure are formed, so as to ensure the normal operation of the temperature equalizing plate while improving its structural strength and reliability of use.

惟以上所述者,僅為本創作之較佳實施例而已,當不能以此限定本創作實施之範圍,即大凡依本創作申請專利範圍及創作說明內容所作之簡單的等效變化與修飾,皆仍屬本創作專利涵蓋之範圍內。另外,本創作的任一實施例或申請專利範圍不須達成本創作所揭露之全部目的或優點或特點。此外,摘要部分和標題僅是用來輔助專利文件搜尋之用,並非用來限制本創作之專利範圍。此外,本說明書或申 請專利範圍中提及的”第一”、”第二”等用語僅用以命名元件(element)的名稱或區別不同實施例或範圍,而並非用來限制元件數量上的上限或下限。 However, the above are only the preferred embodiments of this creation, which should not be used to limit the scope of the implementation of this creation, that is, the simple equivalent changes and modifications made by Dafan in accordance with the scope of the patent application for this creation and the content of the creation description, All still fall within the scope of this creative patent. In addition, any embodiment or scope of patent application of this creation does not need to achieve all the purposes or advantages or features disclosed by the cost creation. In addition, the abstract part and title are only used to assist the search of patent documents, not to limit the scope of the patent of this creation. In addition, this manual or application The terms "first" and "second" mentioned in the patent scope are only used to name the element or distinguish different embodiments or ranges, and are not used to limit the upper or lower limit of the number of elements.

1‧‧‧均溫板 1‧‧‧average temperature plate

11‧‧‧上板 11‧‧‧Upboard

12‧‧‧下板 12‧‧‧Lower plate

111‧‧‧第一金屬層 111‧‧‧First metal layer

112‧‧‧第二金屬層 112‧‧‧Second metal layer

121‧‧‧第三金屬層 121‧‧‧The third metal layer

122‧‧‧第四金屬層 122‧‧‧Fourth metal layer

113‧‧‧支撐結構 113‧‧‧Support structure

114‧‧‧第一裙邊結構 114‧‧‧The first skirt structure

123‧‧‧第二裙邊結構 123‧‧‧Second skirt structure

124‧‧‧毛細結構 124‧‧‧Capillary structure

S1‧‧‧第一空間 S1‧‧‧First Space

S2‧‧‧第二空間 S2‧‧‧Second Space

WS‧‧‧作用空間 WS‧‧‧Function space

Claims (22)

一種均溫板,包括: An even temperature plate, including: 一上板,包括材質不同的一第一金屬層與一第二金屬層;以及 An upper plate, including a first metal layer and a second metal layer of different materials; and 一下板,貼合於該上板; Click on the board and attach it to the upper board; 其中,於該上板的該第一金屬層與該第二金屬層進行一沖壓加工,使得該第一金屬層與該第二金屬層同時產生形變而形成至少一支撐結構以及一第一裙邊結構,該上板藉由該第一裙邊結構貼合於該下板而定義出一作用空間,該至少一支撐結構係位於該作用空間內。 Wherein, the first metal layer and the second metal layer on the upper plate are subjected to a stamping process, so that the first metal layer and the second metal layer are simultaneously deformed to form at least one support structure and a first skirt In the structure, the upper plate defines a working space by the first skirt structure being attached to the lower plate, and the at least one supporting structure is located in the working space. 如申請專利範圍第1項所述的均溫板,其中該上板的該第一金屬層與該第二金屬層以擴散接合的方式彼此接合。 The temperature equalizing plate as described in item 1 of the patent application range, wherein the first metal layer and the second metal layer of the upper plate are bonded to each other by diffusion bonding. 如申請專利範圍第1項所述的均溫板,其中該下板包括材質不同的一第三金屬層與一第四金屬層,並於該第三金屬層進行一蝕刻加工而於該第三金屬層上形成一第二裙邊結構,該下板藉由該第二裙邊結構貼合於該上板的該第一裙邊結構而定義出該作用空間。 The temperature equalizing plate as described in item 1 of the patent application scope, wherein the lower plate includes a third metal layer and a fourth metal layer of different materials, and an etching process is performed on the third metal layer to the third A second skirt structure is formed on the metal layer, and the lower plate defines the working space by the first skirt structure that the second skirt structure is attached to the upper plate. 如申請專利範圍第3項所述的均溫板,其中該下板的該第三金屬層與該第四金屬層以擴散接合的方式彼此接合。 The temperature equalizing plate as described in item 3 of the patent application range, wherein the third metal layer and the fourth metal layer of the lower plate are bonded to each other by diffusion bonding. 如申請專利範圍第3項所述的均溫板,其中該第一裙邊結構界定出一第一空間,該第二裙邊結構界定出一第二空間,該作用空間包括該第一空間與該第二空間。 The temperature equalizing plate as described in item 3 of the patent application scope, wherein the first skirt structure defines a first space, the second skirt structure defines a second space, and the action space includes the first space and The second space. 如申請專利範圍第3項所述的均溫板,其中於該下板的該第三金屬層上形成一毛細結構,該毛細結構位於該作用空間內,且該至少一支撐結構接觸於該毛細結構。 The temperature equalizing plate as described in item 3 of the patent application scope, wherein a capillary structure is formed on the third metal layer of the lower plate, the capillary structure is located in the action space, and the at least one support structure contacts the capillary structure. 如申請專利範圍第3項所述的均溫板,其中該第一金屬層位於該第二金屬層與該第三金屬層之間,該第二金屬層的厚度大於或等於四分之一該第一金屬層的厚度,且該第二金屬層的厚度小於或等於三分之一該第一金屬層的厚度,該第三金屬層位於該第一金屬層與該第四金屬層之間,該第四金屬層的厚度大於或等於四分之一該第三金屬層的厚度,且該第四金屬層的厚度小於或等於三分之一該第三金屬層的厚度。 The temperature equalizing plate as described in item 3 of the patent application scope, wherein the first metal layer is located between the second metal layer and the third metal layer, and the thickness of the second metal layer is greater than or equal to a quarter of the The thickness of the first metal layer, and the thickness of the second metal layer is less than or equal to one third of the thickness of the first metal layer, the third metal layer is located between the first metal layer and the fourth metal layer, The thickness of the fourth metal layer is greater than or equal to a quarter of the thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer. 如申請專利範圍第7項所述的均溫板,其中該第二金屬層的金屬強度大於該第一金屬層的金屬強度,該第四金屬層的金屬強度大於該第三金屬層的金屬強度。 The temperature equalizing plate as described in item 7 of the patent application range, wherein the metal strength of the second metal layer is greater than that of the first metal layer, and the metal strength of the fourth metal layer is greater than that of the third metal layer . 一種均溫板,包括: An even temperature plate, including: 一上板,包括材質不同的一第一金屬層與一第二金屬層;以及 An upper plate, including a first metal layer and a second metal layer of different materials; and 一下板,貼合於該上板; Click on the board and attach it to the upper board; 其中,於該上板的該第一金屬層進行沖壓加工,使得該第一金屬層產生形變而形成至少一支撐結構,該上板藉由該第二金屬層貼合於該下板而定義出一作用空間,該至少一支撐結構係位於該作用空間內。 Wherein, the first metal layer of the upper plate is punched to deform the first metal layer to form at least one support structure, and the upper plate is defined by the second metal layer being attached to the lower plate An action space, the at least one support structure is located in the action space. 如申請專利範圍第9項所述的均溫板,其中該上板的該第一金屬層與該第二金屬層以擴散接合的方式彼此接合。 The temperature equalizing plate as described in item 9 of the patent application range, wherein the first metal layer and the second metal layer of the upper plate are bonded to each other by diffusion bonding. 如申請專利範圍第9項所述的均溫板,其中該下板包括材質不同的一第三金屬層與一第四金屬層,並於該下板的該第三金屬層進行一蝕刻加工而於該第三金屬層上形成一裙邊結構,該下板藉由該裙邊結構貼合於該上板的該第二金屬層而定義出該作用空間。 The temperature equalizing plate as described in item 9 of the patent application scope, wherein the lower plate includes a third metal layer and a fourth metal layer of different materials, and an etching process is performed on the third metal layer of the lower plate A skirt structure is formed on the third metal layer, and the lower plate defines the working space by the skirt structure being attached to the second metal layer of the upper plate. 如申請專利範圍第11項所述的均溫板,其中該下板的該第三金屬層與該第四金屬層以擴散接合的方式彼此接合。 The temperature equalizing plate as described in item 11 of the patent application range, wherein the third metal layer and the fourth metal layer of the lower plate are bonded to each other by diffusion bonding. 如申請專利範圍第11項所述的均溫板,其中該下板的裙邊結構界定出該作用空間。 The temperature equalizing plate as described in item 11 of the patent application scope, wherein the skirt structure of the lower plate defines the action space. 如申請專利範圍第11項所述的均溫板,其中於該下板的該第三金屬層上形成一毛細結構,該毛細結構位於該作用空間內,且該至少一支撐結構接觸於該毛細結構。 The temperature equalizing plate as described in item 11 of the patent application scope, wherein a capillary structure is formed on the third metal layer of the lower plate, the capillary structure is located in the action space, and the at least one support structure contacts the capillary structure. 如申請專利範圍第11項所述的均溫板,其中該第一金屬層位於該第二金屬層與該第三金屬層之間,該第二金屬層的厚度大於或等於四分之一該第一金屬層的厚度,且該第二金屬層的厚度小於或等於三分之一該第一金屬層的厚度,該第三金屬層位於該第一金屬層與該第四金屬層之間,該第四金屬層的厚度大於或等於四分之一該第三金屬層的厚度,且該第四金屬層的厚度小於或等於三分之一該第三金屬層的厚度。 The temperature equalizing plate as described in item 11 of the patent application range, wherein the first metal layer is located between the second metal layer and the third metal layer, and the thickness of the second metal layer is greater than or equal to a quarter of the The thickness of the first metal layer, and the thickness of the second metal layer is less than or equal to one third of the thickness of the first metal layer, the third metal layer is located between the first metal layer and the fourth metal layer, The thickness of the fourth metal layer is greater than or equal to a quarter of the thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer. 如申請專利範圍第15項所述的均溫板,其中該第二金屬層的金屬強度大於該第一金屬層的金屬強度,該第四金屬層的金屬強度大於該第三金屬層的金屬強度。 The temperature equalizing plate as described in Item 15 of the patent application range, wherein the metal strength of the second metal layer is greater than that of the first metal layer, and the metal strength of the fourth metal layer is greater than that of the third metal layer . 一種均溫板,包括: An even temperature plate, including: 一上板,包括材質不同的一第一金屬層與一第二金屬層;以及 An upper plate, including a first metal layer and a second metal layer of different materials; and 一下板,包括材質不同的一第三金屬層與一第四金屬層; A board, including a third metal layer and a fourth metal layer of different materials; 其中,於該上板的該第一金屬層與該第二金屬層進行一沖壓加工,使得該第一金屬層與該第二金屬層同時產生形變而形成一第一裙邊結構; Wherein, a stamping process is performed on the first metal layer and the second metal layer on the upper plate, so that the first metal layer and the second metal layer are simultaneously deformed to form a first skirt structure; 其中,於該下板的該第三金屬層進行一蝕刻加工而於該第三金屬層上形成一第二裙邊結構以及至少一支撐結構,該下板藉由該第二裙邊結構貼合於該上板的該第一裙邊結構而定義出一作用空間,該至少一支撐結構係位於該作用空間內。 Wherein, an etching process is performed on the third metal layer of the lower plate to form a second skirt structure and at least one supporting structure on the third metal layer, and the lower plate is bonded by the second skirt structure An action space is defined by the first skirt structure of the upper plate, and the at least one support structure is located in the action space. 如申請專利範圍第17項所述的均溫板,其中該上板的該第一金屬層與該第二金屬層以擴散接合的方式彼此接合,該下板的該第三金屬層與該第四金屬層以擴散接合的方式彼此接合。 The temperature equalizing plate as described in item 17 of the patent application range, wherein the first metal layer and the second metal layer of the upper plate are bonded to each other by diffusion bonding, and the third metal layer of the lower plate and the first The four metal layers are bonded to each other by diffusion bonding. 如申請專利範圍第17項所述的均溫板,其中該第一裙邊結構界定出一第一空間,該第二裙邊結構界定出一第二空間,該作用空間包括該第一空間與該第二空間。 The temperature equalizing plate as described in item 17 of the patent application scope, wherein the first skirt structure defines a first space, the second skirt structure defines a second space, and the action space includes the first space and The second space. 如申請專利範圍第17項所述的均溫板,其中於該上板的該第一金屬層上形成一毛細結構,該毛細結構位於該作用空間內,且該至少一支撐結構接觸於該毛細結構。 The temperature equalizing plate as described in item 17 of the patent application scope, wherein a capillary structure is formed on the first metal layer of the upper plate, the capillary structure is located in the action space, and the at least one support structure contacts the capillary structure. 如申請專利範圍第17項所述的均溫板,其中該第一金屬層位於該第二金屬層與該第三金屬層之間,該第二金屬層的厚度大於或等於四分之一該第一金屬層的厚度,且該第二金屬層的厚度小於或等於三分之一該第一金屬層的厚度,該第三金屬層位於該第一金屬層與該第四金屬層之間,該第四金屬層的厚度大於或等於四分之一該第三金屬層的厚度,且該第四金屬層的厚度小於或等於三分之一該第三金屬層的厚度。 The temperature equalizing plate as described in Item 17 of the patent application range, wherein the first metal layer is located between the second metal layer and the third metal layer, and the thickness of the second metal layer is greater than or equal to a quarter of the The thickness of the first metal layer, and the thickness of the second metal layer is less than or equal to one third of the thickness of the first metal layer, the third metal layer is located between the first metal layer and the fourth metal layer, The thickness of the fourth metal layer is greater than or equal to a quarter of the thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer. 如申請專利範圍第21項所述的均溫板,其中該第二金屬層的金屬強度大於該第一金屬層的金屬強度,該第四金屬層的金屬強度大於該第三金屬層的金屬強度。 The temperature equalizing plate as described in item 21 of the patent application range, wherein the metal strength of the second metal layer is greater than that of the first metal layer, and the metal strength of the fourth metal layer is greater than that of the third metal layer .
TW109200416U 2020-01-10 2020-01-10 Vapor chamber TWM594179U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW109200416U TWM594179U (en) 2020-01-10 2020-01-10 Vapor chamber

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW109200416U TWM594179U (en) 2020-01-10 2020-01-10 Vapor chamber

Publications (1)

Publication Number Publication Date
TWM594179U true TWM594179U (en) 2020-04-21

Family

ID=71134091

Family Applications (1)

Application Number Title Priority Date Filing Date
TW109200416U TWM594179U (en) 2020-01-10 2020-01-10 Vapor chamber

Country Status (1)

Country Link
TW (1) TWM594179U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111912276A (en) * 2020-07-06 2020-11-10 瑞声科技(南京)有限公司 Temperature equalizing plate
CN113916033A (en) * 2020-07-09 2022-01-11 煌傑金属复合材料科技股份有限公司 Temperature equalizing plate
WO2022007047A1 (en) * 2020-07-06 2022-01-13 瑞声声学科技(深圳)有限公司 Vapor chamber

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111912276A (en) * 2020-07-06 2020-11-10 瑞声科技(南京)有限公司 Temperature equalizing plate
CN111912276B (en) * 2020-07-06 2021-12-14 瑞声科技(南京)有限公司 Temperature equalizing plate
WO2022007047A1 (en) * 2020-07-06 2022-01-13 瑞声声学科技(深圳)有限公司 Vapor chamber
WO2022007044A1 (en) * 2020-07-06 2022-01-13 瑞声声学科技(深圳)有限公司 Vapor chamber
CN113916033A (en) * 2020-07-09 2022-01-11 煌傑金属复合材料科技股份有限公司 Temperature equalizing plate

Similar Documents

Publication Publication Date Title
TWM594179U (en) Vapor chamber
CN211651334U (en) Temperature equalizing plate
US11092383B2 (en) Heat dissipation device
TW202126975A (en) Vapor chamber
US20130092353A1 (en) Vapor chamber structure and method of manufacturing same
JP2019009292A (en) Heat sink and manufacturing method of the same and electronic component device
CN113124698A (en) Temperature equalizing plate
JP6734594B2 (en) Heat sink, method for manufacturing the heat sink, and electronic component package using the heat sink
TWI687644B (en) Heat transferring module and manufacturing method thereof
CN109891178A (en) The slim soaking plate formed by Sheet Metal Forming Technology
JP2018179471A (en) Heat pipe and manufacturing method thereof
CN100364079C (en) Heating radiator and method for making same
CN104869783B (en) Heat dissipation module assembly structure and manufacturing method thereof
TWI750694B (en) Cooling module and manufacturing method thereof
TWM593528U (en) Uniform temperature plate structure
CN113811135B (en) Heat dissipation module and manufacturing method thereof
JP6109274B1 (en) Heat sink, method for manufacturing the heat sink, and electronic component package using the heat sink
TWI842013B (en) Heat dissipation device and manufacturing method thereof
JP6986808B1 (en) A heat sink, a method for manufacturing the heat sink, and an electronic component package using the heat sink.
JP6396703B2 (en) Manufacturing method of heat dissipation component for semiconductor element
US9897390B2 (en) Fixing structure for heat dissipation element
TWI798515B (en) Vapor chamber structure
TWI546177B (en) Method of forming a heat dissipation plate module
US20240074114A1 (en) Heat dissipation device and manufacturing method therefor
WO2022074856A1 (en) Heatsink, method for manufacturing heatsink, and electronic component package using said heatsink