CN113124698A

CN113124698A - Temperature equalizing plate

Info

Publication number: CN113124698A
Application number: CN202010027362.5A
Authority: CN
Inventors: 陈志伟; 张天曜; 郭哲玮; 简梓芸
Original assignee: Zehong Guangzhou Electronic Technology Co ltd
Current assignee: Zehong Guangzhou Electronic Technology Co ltd
Priority date: 2020-01-10
Filing date: 2020-01-10
Publication date: 2021-07-16

Abstract

The invention provides a temperature-uniforming plate which comprises an upper plate and a lower plate. The upper plate comprises a first metal layer and a second metal layer which are made of different materials. The lower plate is attached to the upper plate. The first metal layer and the second metal layer of the upper plate are punched, so that the first metal layer and the second metal layer are deformed simultaneously to form at least one supporting structure and a first skirt edge structure, the upper plate is attached to the lower plate by virtue of the first skirt edge structure to define an action space, and the at least one supporting structure is positioned in the action space. The invention can ensure the normal operation of the temperature-uniforming plate and simultaneously improve the structural strength and the use reliability of the temperature-uniforming plate.

Description

Temperature equalizing plate

Technical Field

The present invention relates to a heat dissipation device, and more particularly, to a vapor chamber.

Background

The Vapor chamber (Vapor chamber) is a heat dissipation device, and its working principle is similar to that of a heat pipe, and the difference lies in that the heat conduction of the heat pipe is the linear transmission in one-dimensional direction, and the Vapor chamber is the linear transmission in two-dimensional direction. The structure of the temperature-equalizing plate mainly comprises an upper plate body, a lower plate body and an action space, wherein after the lower plate body is contacted with a heat source such as a heating electronic element, a working medium in the action space is converted from a liquid state into a gas state and is transmitted towards the upper plate body, and finally, heat energy is transmitted out by means of a heat dissipation device such as a fin in the area except the area contacted with the heat source on the temperature-equalizing plate or on the outer side of the temperature-equalizing plate, at the moment, the working medium is converted back into the liquid state and returns to the lower plate body, and the next circulation is carried out again.

Since handheld electronic devices such as smart phones, tablet computers, or small notebook computers are mainstream products in the market, and the handheld electronic devices mainly use a thin temperature equalization plate to achieve the purpose of dissipating heat of internal electronic components, the thin temperature equalization plate is easy to deform, especially when the temperature equalization plate is attached to a heat source during assembly, how to improve the structural strength of the temperature equalization plate and at the same time, the normal operation of the temperature equalization plate is not hindered, which is a focus of attention of related people in the field.

Disclosure of Invention

The present invention is directed to provide a vapor chamber, which can ensure normal operation of the vapor chamber and improve structural strength and reliability of the vapor chamber by the material and structural arrangement of the upper plate and the lower plate.

The technical scheme adopted by the invention for solving the technical problem is to provide a temperature-uniforming plate, which comprises an upper plate and a lower plate. The upper plate comprises a first metal layer and a second metal layer which are made of different materials. The lower plate is attached to the upper plate. The first metal layer and the second metal layer of the upper plate are punched, so that the first metal layer and the second metal layer are simultaneously deformed to form at least one supporting structure and a first skirt edge structure, the upper plate is attached to the lower plate by virtue of the first skirt edge structure to define an action space, and the at least one supporting structure is positioned in the action space.

In an embodiment of the invention, the first metal layer and the second metal layer of the upper plate are bonded to each other in a diffusion bonding manner.

In an embodiment of the invention, the lower plate includes a third metal layer and a fourth metal layer made of different materials, and the third metal layer is etched to form a second skirt structure on the third metal layer, and the lower plate defines the action space by the second skirt structure being attached to the first skirt structure of the upper plate.

In an embodiment of the invention, the third metal layer and the fourth metal layer of the lower plate are bonded to each other in a diffusion bonding manner.

In an embodiment of the invention, the first skirt structure defines a first space, the second skirt structure defines a second space, and the operation space includes the first space and the second space.

In an embodiment of the invention, a capillary structure is formed on the third metal layer of the lower plate, the capillary structure is located in the active space, and at least one support structure is in contact with the capillary structure.

In an embodiment of the invention, the first metal layer is located between the second metal layer and the third metal layer, the thickness of the second metal layer is greater than or equal to a quarter of the thickness of the first metal layer, and the thickness of the second metal layer is less than or equal to a third of the thickness of the first metal layer; the third metal layer is positioned between the first metal layer and the fourth metal layer, the thickness of the fourth metal layer is greater than or equal to one fourth of the thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer.

In an embodiment of the invention, a metal strength of the second metal layer is greater than a metal strength of the first metal layer, and a metal strength of the fourth metal layer is greater than a metal strength of the third metal layer.

The invention provides a temperature-uniforming plate, which comprises an upper plate and a lower plate. The upper plate comprises a first metal layer and a second metal layer which are made of different materials. The lower plate is attached to the upper plate. The first metal layer of the upper plate is punched, so that the first metal layer deforms to form at least one supporting structure and a first skirt edge structure, the upper plate is attached to the lower plate through the first skirt edge structure to define an action space, and the at least one supporting structure is located in the action space.

The invention provides a temperature-uniforming plate, which comprises an upper plate and a lower plate. The upper plate comprises a first metal layer and a second metal layer which are made of different materials. The lower plate comprises a third metal layer and a fourth metal layer which are made of different materials. The first metal layer and the second metal layer of the upper plate are punched, so that the first metal layer and the second metal layer are deformed simultaneously to form a first skirt structure; and etching the third metal layer of the lower plate to form a second skirt structure and at least one support structure on the third metal layer, wherein the lower plate defines an action space by the second skirt structure being attached to the first skirt structure of the upper plate, and the at least one support structure is positioned in the action space.

The upper plate and the lower plate of the temperature-uniforming plate are mainly composite metal plates formed by at least two metals of different materials, and a supporting structure and a skirt structure are directly formed on the upper plate or the lower plate through stamping processing or etching processing, so that the normal operation of the temperature-uniforming plate can be ensured, and the structural strength and the use reliability of the temperature-uniforming plate are improved.

Other objects and advantages of the present invention will be further understood from the technical features disclosed in the present invention. In order to make the aforementioned and other objects, features and advantages of the present invention comprehensible, preferred embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1 is a schematic cross-sectional view of a vapor chamber according to an embodiment of the invention.

Fig. 2A to 2F are schematic views illustrating a manufacturing process of the vapor chamber shown in fig. 1.

Fig. 3 is a schematic cross-sectional view of a vapor chamber according to another embodiment of the invention.

Fig. 4 is a schematic cross-sectional view of a vapor chamber according to another embodiment of the invention.

Fig. 5A to 5F are schematic views illustrating a manufacturing process of the vapor chamber shown in fig. 4.

Detailed Description

Please refer to fig. 1, which is a schematic cross-sectional view of a vapor chamber according to an embodiment of the invention. As shown in fig. 1, the vapor chamber 1 of the present embodiment includes an upper plate 11 and a lower plate 12. The upper plate 11 includes a first metal layer 111 and a second metal layer 112 made of different materials. The lower plate 12 is attached to the upper plate 11. In the present embodiment, the upper plate 11 has a plurality of supporting structures 113 extending toward the lower plate 12 and a first skirt structure 114, the supporting structures 113 are arranged at intervals, the upper plate 11 is attached to the lower plate 12 by the first skirt structure 114, and an action space WS is defined between the upper plate 11 and the lower plate 12, and the supporting structures 113 are located in the action space WS, and the action space WS is filled with a working medium. Specifically, the support structures 113 and the first skirt structures 114 of the upper plate 11 are formed by stamping, that is, the first metal layer 111 and the second metal layer 112 of the upper plate 11 are stamped, so that the first metal layer 111 and the second metal layer 112 are simultaneously deformed to form the support structures 113 and the first skirt structures 114 extending toward the lower plate 12. The heat dissipation principle and the operation of the vapor chamber 1 are well known to those skilled in the art, and therefore will not be described herein again.

The detailed structure of the vapor chamber 1 according to the embodiment of the present invention will be described in detail below.

As shown in fig. 1, the lower plate 12 of the present embodiment includes a third metal layer 121 and a fourth metal layer 122 made of different materials. In the present embodiment, the lower plate 12 has a second skirt structure 123, and the lower plate 12 is attached to the first skirt structure 114 of the upper plate 11 by the second skirt structure 123, and defines the above-mentioned acting space WS with the upper plate 11. Specifically, the second skirt structure 123 of the lower plate 12 is formed by etching, that is, the third metal layer 121 of the lower plate 12 is etched to form the second skirt structure 123 on the third metal layer 121.

As shown in fig. 1, when the first metal layer 111 and the second metal layer 112 of the upper plate 11 are stamped to form a plurality of support structures 113 and a first skirt structure 114, the first skirt structure 114 defines a first space S1 below the upper plate 11, that is, a space between the first skirt structure 114 and an adjacent support structure 113 and a space between any two adjacent support structures 113. When the third metal layer 121 of the lower plate 12 is etched to form the second skirt structure 123, the second skirt structure 123 defines a second space S2 above the lower plate 12. When the first skirt structure 114 of the upper plate 11 and the second skirt structure 123 of the lower plate 12 are attached to each other, the action space WS defined therebetween includes the first space S1 and the second space S2, i.e., the first space S1 and the second space S2 are combined to form the complete action space WS.

As shown in fig. 1, the lower plate 12 of the present embodiment further includes a capillary structure 124. The capillary structure 124 is formed on the third metal layer 121 of the lower plate 12, and the capillary structure 124 is located in the action space WS, and the support structures 113 extending from the upper plate 11 contact the capillary structure 124. Specifically, after the second skirt structure 123 is formed on the third metal layer 121 of the lower plate 12 by etching, the second skirt structure 123 defines a second space S2 above the lower plate 12, at this time, the capillary structure 124 is formed in the second space S2 of the lower plate 12, and after the first skirt structure 114 of the upper plate 11 and the second skirt structure 123 of the lower plate 12 are attached to each other, the support structures 113 extending from the upper plate 11 contact the capillary structure 124.

As shown in fig. 1, the first metal layer 111 of the present embodiment is located between the second metal layer 112 and the third metal layer 121 of the lower plate 12, that is, the first metal layer 111 is an inner metal layer of the upper plate 11, and the second metal layer 112 is an outer metal layer of the upper plate 11, in the present embodiment, the thickness of the second metal layer 112 is, for example, greater than or equal to one fourth of the thickness of the first metal layer 111 and less than or equal to one third of the thickness of the first metal layer 111, that is, the thickness of the outer metal layer of the upper plate 11 is less than the thickness of the inner metal layer, and the metal strength of the second metal layer 112 is greater than the strength of the first metal layer 111. In the present embodiment, the third metal layer 121 is located between the fourth metal layer 122 and the first metal layer 111 of the upper plate 11, that is, the third metal layer 121 is an inner metal layer of the lower plate 12, and the fourth metal layer 122 is an outer metal layer of the lower plate 12, in the present embodiment, the thickness of the fourth metal layer 122 is, for example, greater than or equal to one fourth of the thickness of the third metal layer 121 and less than or equal to one third of the thickness of the third metal layer 121, and the thickness of the outer metal layer of the lower plate 12 is smaller than the thickness of the inner metal layer, and the metal strength of the fourth metal layer 122 is greater than the strength of the third metal layer 121. In addition, the first metal layer 111 and the second metal layer 112 are bonded to each other by diffusion bonding, for example, to form the upper plate 11 of the composite metal layer structure, and similarly, the third metal layer 121 and the fourth metal layer 122 are bonded to each other by diffusion bonding, for example, to form the lower plate 12 of the composite metal layer structure.

It should be noted that the material of the first metal layer 111 and the second metal layer 112 of the upper plate 11 and the third metal layer 121 and the fourth metal layer 122 of the lower plate 12 may be selected from one of titanium, nickel, copper, and steel, and the material of the metal layers may be arbitrarily replaced on the premise that the metal strength of the outer metal layers (the second metal layer 112 and the fourth metal layer 122) is greater than that of the inner metal layers (the first metal layer 111 and the third metal layer 121), in this embodiment, the outer metal layers (the second metal layer 112 and the fourth metal layer 122) are made of nickel, for example, and the inner metal layers (the first metal layer 111 and the third metal layer 121) are made of copper, for example. Furthermore, the present invention does not limit the bonding manner between the first metal layer 111 and the second metal layer 112 and the bonding manner between the third metal layer 121 and the fourth metal layer 122, and the bonding manner between the first metal layer 111 and the second metal layer 112 and the bonding manner between the third metal layer 121 and the fourth metal layer 122 may be changed according to the requirements of the actual situation. The above-mentioned standard for measuring the strength of the metal is selected from one of Young's modulus and Vickers hardness.

Please refer to fig. 2A to fig. 2F, which are schematic diagrams illustrating a manufacturing process of the vapor chamber shown in fig. 1. As shown in fig. 2A, an upper plate 11 formed by compositing a first metal layer 111 and a second metal layer 112 is provided; then, as shown in fig. 2B, a plurality of supporting structures 113 and a plurality of first skirt structures 114 are formed by stamping the first metal layer 111 and the second metal layer 112 through a die M1; then, as shown in fig. 2C, providing the lower plate 12 formed by combining the third metal layer 121 and the fourth metal layer 122; then, as shown in fig. 2D, etching process is performed on the third metal layer 121 to form a second skirt structure 123 on the third metal layer 121; then, as shown in fig. 2E, a capillary structure 124 is formed in the second space S2 of the third metal layer 121; then, as shown in fig. 2F, the first skirt structure 114 of the upper plate 11 is attached to the second skirt structure 123 of the lower plate 12 to form the structure of the vapor chamber 1 shown in fig. 1.

It should be noted that the sequence of the manufacturing process of the vapor chamber shown in fig. 2A to 2F is only one embodiment of the present invention, and the present invention does not limit the sequence of the manufacturing process of the vapor chamber, for example, the steps of fig. 2C to 2E may be completed before the steps of fig. 2A to 2B, that is, the manufacturing of the lower plate 12 (for example, etching the third metal layer 121 and forming the capillary structure 124) is completed, and then the manufacturing of the upper plate 11 (for example, simultaneously stamping the first metal layer 111 and the second metal layer 112) is performed, that is, the manufacturing of the upper plate 11 and the lower plate 12 are two separate processes, and the sequence of the two processes does not affect the step of attaching the lower plate 12 to the subsequent upper plate 11 (for example, fig. 2F).

Please refer to fig. 3, which is a schematic cross-sectional view of a vapor chamber according to another embodiment of the present invention. As shown in fig. 3, the vapor chamber 2 of the present embodiment includes an upper plate 21 and a lower plate 22. The upper plate 21 includes a first metal layer 211 and a second metal layer 212 having different materials. The lower plate 22 includes a third metal layer 221 and a fourth metal layer 222 of different materials, and the lower plate 22 is attached to the upper plate 21. In the present embodiment, the upper plate 21 has a plurality of supporting structures 213 extending toward the lower plate 22, the supporting structures 213 are arranged at intervals, the upper plate 21 is attached to the lower plate 22 by the second metal layer 212, and an action space WS ' is defined between the upper plate and the lower plate 22, and the supporting structures 213 are located in the action space WS ', and the action space WS ' is filled with a working medium. The lower plate 22 has a skirt structure 223, and the lower plate 22 is attached to the second metal layer 212 of the upper plate 21 by the skirt structure 223 and defines the above-mentioned action space WS 'with the upper plate 11, that is, in the present embodiment, the action space WS' is directly defined by the skirt structure 223 of the lower plate 22.

As described above, the difference between the temperature-equalizing plate 2 of the present embodiment and the temperature-equalizing plate 1 shown in fig. 1 is that, in the present embodiment, only the first metal layer 211 on the inner side of the upper plate 21 is subjected to the press working, and the second metal layer 212 on the outer side is not subjected to the press working, so that only the first metal layer 211 is deformed to form the support structures 213 extending in the direction of the lower plate 22. In addition to the above differences, other detailed structures of the vapor chamber 2 of the present embodiment, such as the skirt structure 223 of the lower plate 22 formed by etching and the capillary structure 224 formed on the third metal layer 221 of the lower plate 22, are similar to the vapor chamber 1 shown in fig. 1, and therefore will not be described in detail in this section. In addition, the manufacturing process of the vapor chamber 2 of the present embodiment is similar to the manufacturing process shown in fig. 2A to 2F, and the difference is that the first metal layer 211 is pressed before the first metal layer 211 and the second metal layer 212 are joined to form the upper plate 21.

Please refer to fig. 4, which is a schematic cross-sectional view illustrating a vapor chamber according to another embodiment of the present invention. As shown in fig. 4, the vapor chamber 3 of the present embodiment includes an upper plate 31 and a lower plate 32. The upper plate 31 includes a first metal layer 311 and a second metal layer 312 of different materials. The lower plate 32 includes a third metal layer 321 and a fourth metal layer 322 of different materials. In this embodiment, the upper plate 31 has a first skirt structure 313. The lower plate 32 has a plurality of supporting structures 323 and second skirt structures 324 extending toward the upper plate 31, the supporting structures 323 are spaced apart from each other, the lower plate 32 is attached to the first skirt structures 313 of the upper plate 31 by the second skirt structures 324, an action space WS "is defined between the upper plate 31 and the lower plate 32, and the supporting structures 323 are located in the action space WS", and the action space WS "is filled with a working medium.

As described above, the difference between the temperature-equalizing plate 3 of the present embodiment and the temperature-equalizing plate 1 shown in fig. 1 is that, in the present embodiment, the first skirt structure 313 of the upper plate 31 is formed by stamping, that is, the first metal layer 311 and the second metal layer 312 of the upper plate 31 are stamped, so that the first metal layer 311 and the second metal layer 312 are deformed at the same time to form the first skirt structure 313; the support structures 323 and the second skirt structures 324 of the lower plate 32 are formed by etching, that is, the support structures 323 and the second skirt structures 324 are formed on the third metal layer 321 of the lower plate 32 by etching the third metal layer 321; in addition, the upper plate 31 of the present embodiment further includes a capillary structure 314. The capillary structure 314 is formed on the first metal layer 311 of the upper plate 31, and the capillary structure 314 is located in the action space WS "(i.e. the first space S1 defined by the first skirt structure 313), while the support structures 323 extending from the lower plate 32 contact the capillary structure 314. Except for the above differences, other detailed structures of the temperature-equalizing plate 3 of the present embodiment are similar to the temperature-equalizing plate 1 shown in fig. 1, and therefore will not be described in detail in this section.

Please refer to fig. 5A to 5F, which are schematic views illustrating a manufacturing process of the vapor chamber shown in fig. 4. As shown in fig. 5A, an upper plate 31 formed by compositing a first metal layer 311 and a second metal layer 312 is provided; then, as shown in fig. 5B, the first metal layer 311 and the second metal layer 312 are pressed by a die M2 to form a first skirt structure 313; then, as shown in fig. 5C, a lower plate 32 formed by combining the third metal layer 321 and the fourth metal layer 322 is provided; then, as shown in fig. 5D, an etching process is performed on the third metal layer 321 to form a plurality of support structures 323 and second skirt structures 324 on the third metal layer 321; then, as shown in fig. 5E, a capillary structure 314 is formed in the first space S1 of the first metal layer 311; then, as shown in fig. 5F, the first skirt structure 313 of the upper plate 31 is attached to the second skirt 324 of the lower plate 32 to form the structure of the vapor chamber panel 3 shown in fig. 4.

It should be noted that the sequence of the manufacturing process of the vapor chamber shown in fig. 5A to 5F is only one embodiment of the present invention, and the present invention does not limit the sequence of the manufacturing process of the vapor chamber, for example, the steps shown in fig. 5C to 5D may be completed before the steps shown in fig. 5A to 5B, that is, the manufacturing of the lower plate 32 is completed (for example, the third metal layer 321 is etched), and then the manufacturing of the upper plate 31 is performed (for example, the first metal layer 311 and the second metal layer 312 are simultaneously stamped), that is, the manufacturing of the upper plate 31 and the lower plate 32 are two separate processes, and the sequence of the completion of the two processes does not affect the subsequent step of attaching the lower plate 32 to the upper plate 31 (for example, fig. 5F).

In summary, in the temperature-uniforming plate according to the embodiment of the present invention, the upper plate and the lower plate are mainly composite metal plates made of at least two metals of different materials, and the support structure and the skirt structure are directly formed on the upper plate or the lower plate through stamping or etching, so that the temperature-uniforming plate can be ensured to normally operate, and the structural strength and the reliability of use are improved.

However, the above description is only a preferred embodiment of the present invention, and the scope of the present invention should not be limited thereby, and all the simple equivalent changes and modifications made by the claims and the contents of the specification should be included in the scope of the present invention. Moreover, it is not necessary for any embodiment or claim of the invention to address all of the objects, advantages, or features disclosed herein. In addition, the abstract and the title of the invention are provided for assisting the search of patent documents and are not intended to limit the scope of the invention. Furthermore, the terms "first", "second", and the like in the description or the claims are used only for naming elements (elements) or distinguishing different embodiments or ranges, and are not used for limiting the upper limit or the lower limit on the number of elements.

Claims

1. A vapor chamber, comprising:

an upper plate including a first metal layer and a second metal layer of different materials; and

a lower plate attached to the upper plate;

the first metal layer and the second metal layer of the upper plate are subjected to stamping processing, so that the first metal layer and the second metal layer are simultaneously deformed to form at least one supporting structure and a first skirt edge structure, the upper plate is attached to the lower plate through the first skirt edge structure to define an action space, and the at least one supporting structure is positioned in the action space.

2. The vapor chamber of claim 1, wherein the first metal layer and the second metal layer of the upper plate are bonded to each other by diffusion bonding.

3. The vapor chamber of claim 1, wherein the lower plate comprises a third metal layer and a fourth metal layer made of different materials, and an etching process is performed on the third metal layer to form a second skirt structure on the third metal layer, wherein the lower plate defines the active space by the second skirt structure being attached to the first skirt structure of the upper plate.

4. The vapor chamber of claim 3, wherein the third metal layer and the fourth metal layer of the lower plate are bonded to each other by diffusion bonding.

5. The vapor chamber of claim 3, wherein the first skirt structure defines a first space, the second skirt structure defines a second space, and the active space comprises the first space and the second space.

6. The vapor chamber of claim 3, wherein a capillary structure is formed on the third metal layer of the lower plate, the capillary structure is located in the active space, and the at least one support structure contacts the capillary structure.

7. The vapor chamber of claim 3, wherein the first metal layer is located between the second metal layer and the third metal layer, the second metal layer has a thickness greater than or equal to one-fourth of the thickness of the first metal layer, and the second metal layer has a thickness less than or equal to one-third of the thickness of the first metal layer; the third metal layer is located between the first metal layer and the fourth metal layer, the thickness of the fourth metal layer is greater than or equal to one fourth of the thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer.

8. The vapor chamber of claim 7, wherein the second metal layer has a metal strength greater than that of the first metal layer, and the fourth metal layer has a metal strength greater than that of the third metal layer.

9. A vapor chamber, comprising:

a lower plate attached to the upper plate;

the first metal layer of the upper plate is punched to deform the first metal layer to form at least one supporting structure, the upper plate is attached to the lower plate by the second metal layer to define an action space, and the at least one supporting structure is located in the action space.

10. The vapor chamber of claim 9, wherein the first metal layer and the second metal layer of the upper plate are bonded to each other by diffusion bonding.

11. The vapor chamber of claim 9, wherein the lower plate comprises a third metal layer and a fourth metal layer of different materials, and an etching process is performed on the third metal layer of the lower plate to form a skirt structure on the third metal layer, wherein the skirt structure is attached to the second metal layer of the upper plate to define the active space.

12. The vapor chamber of claim 11, wherein the third metal layer and the fourth metal layer of the lower plate are bonded to each other by diffusion bonding.

13. The vapor panel of claim 11, wherein the skirt structure of the lower panel defines the active volume.

14. The vapor chamber of claim 11, wherein a capillary structure is formed on the third metal layer of the lower plate, the capillary structure is located in the active space, and the at least one support structure contacts the capillary structure.

15. The vapor chamber of claim 11, wherein the first metal layer is located between the second metal layer and the third metal layer, the second metal layer has a thickness greater than or equal to one-quarter of the thickness of the first metal layer, and the second metal layer has a thickness less than or equal to one-third of the thickness of the first metal layer; the third metal layer is located between the first metal layer and the fourth metal layer, the thickness of the fourth metal layer is greater than or equal to one fourth of the thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer.

16. The vapor chamber of claim 15, wherein the second metal layer has a metal strength greater than that of the first metal layer, and the fourth metal layer has a metal strength greater than that of the third metal layer.

17. A vapor chamber, comprising:

a lower plate including a third metal layer and a fourth metal layer of different materials;

performing stamping processing on the first metal layer and the second metal layer of the upper plate to simultaneously deform the first metal layer and the second metal layer to form a first skirt structure; and etching the third metal layer of the lower plate to form a second skirt structure and at least one support structure on the third metal layer, wherein the lower plate defines an action space by the second skirt structure being attached to the first skirt structure of the upper plate, and the at least one support structure is positioned in the action space.

18. The vapor chamber of claim 17, wherein the first metal layer and the second metal layer of the upper plate are diffusion bonded to each other, and the third metal layer and the fourth metal layer of the lower plate are diffusion bonded to each other.

19. The vapor panel of claim 17, wherein the first skirt structure defines a first space, the second skirt structure defines a second space, and the active space comprises the first space and the second space.

20. The vapor chamber of claim 17, wherein a capillary structure is formed on the first metal layer of the top plate, the capillary structure is located in the active space, and the at least one support structure contacts the capillary structure.

21. The vapor chamber of claim 17, wherein the first metal layer is located between the second metal layer and the third metal layer, the second metal layer has a thickness greater than or equal to one-quarter of the thickness of the first metal layer, and the second metal layer has a thickness less than or equal to one-third of the thickness of the first metal layer; the third metal layer is located between the first metal layer and the fourth metal layer, the thickness of the fourth metal layer is greater than or equal to one fourth of the thickness of the third metal layer, and the thickness of the fourth metal layer is less than or equal to one third of the thickness of the third metal layer.

22. The vapor chamber of claim 21, wherein the second metal layer has a metal strength greater than that of the first metal layer, and the fourth metal layer has a metal strength greater than that of the third metal layer.