TWM583173U - Operational Amplifier - Google Patents

Operational Amplifier Download PDF

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TWM583173U
TWM583173U TW108206636U TW108206636U TWM583173U TW M583173 U TWM583173 U TW M583173U TW 108206636 U TW108206636 U TW 108206636U TW 108206636 U TW108206636 U TW 108206636U TW M583173 U TWM583173 U TW M583173U
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Taiwan
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transistors
switches
circuit
bias
operational amplifier
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TW108206636U
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Chinese (zh)
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劉宏裕
曹成銘
王俊儼
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盛群半導體股份有限公司
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Priority to TW108206636U priority Critical patent/TWM583173U/en
Priority to CN201920910477.1U priority patent/CN210431353U/en
Publication of TWM583173U publication Critical patent/TWM583173U/en

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Abstract

本案提供一種運算放大器,包含電流鏡電路、輸入與增益級電路、輸出級電路、偏壓補償電路及控制電路。電流鏡電路產生偏壓電流。輸入與增益級電路耦接電流鏡電路,輸入與增益級電路根據一差動輸入訊號及偏壓電流產生一增益偏壓。輸出級電路耦接電流鏡電路及輸入與增益級電路,輸出級電路根據偏壓電流及增益偏壓產生一輸出訊號。偏壓補償電路並聯於輸出級電路,偏壓補償電路調整輸入與增益級電路產生之增益偏壓,使運算放大器具有可切換之頻寬。The present invention provides an operational amplifier comprising a current mirror circuit, an input and gain stage circuit, an output stage circuit, a bias compensation circuit, and a control circuit. The current mirror circuit generates a bias current. The input and gain stage circuits are coupled to the current mirror circuit, and the input and gain stage circuits generate a gain bias based on a differential input signal and a bias current. The output stage circuit is coupled to the current mirror circuit and the input and gain stage circuits, and the output stage circuit generates an output signal according to the bias current and the gain bias. The bias compensation circuit is connected in parallel to the output stage circuit, and the bias compensation circuit adjusts the gain bias generated by the input and gain stage circuits to provide the operational amplifier with a switchable bandwidth.

Description

運算放大器Operational Amplifier

本案是關於一種運算放大器,且特別是一種頻寬可切換之運算放大器。This case relates to an operational amplifier, and in particular to a bandwidth switchable operational amplifier.

運算放大器一般具有固定的頻寬,具有固定頻寬之運算放大器並無法滿足不同頻寬的應用需求,針對不同頻寬的應用需求,需重新設計運算放大器,對於產品之開發,實屬不便。Operational amplifiers generally have a fixed bandwidth. An operational amplifier with a fixed bandwidth cannot meet the application requirements of different bandwidths. For different bandwidth applications, it is necessary to redesign the operational amplifier, which is inconvenient for product development.

再者,若將運算放大器設計為具有可切換的頻寬,則需進一步考量運算放大器的穩定度問題,倘若造成運算放大器之不穩定,其實際可切換之頻寬之範圍亦將受限。進一步,將運算放大器設計為具有可切換的頻寬亦須考量其電路面積,倘若運算放大器佔據過大之電路面積,則難以滿足現今對於產品之輕薄短小之要求。因此,設計運算放大器具有可切換之頻寬時,必須同時兼顧運算放大器之良好穩定度及較小之電路面積,方屬較佳之電路設計。Furthermore, if the operational amplifier is designed to have a switchable bandwidth, further consideration should be given to the stability of the operational amplifier. If the operational amplifier is unstable, the range of the actual switchable bandwidth will be limited. Further, the design of the operational amplifier to have a switchable bandwidth also requires consideration of its circuit area. If the operational amplifier occupies an excessive circuit area, it is difficult to meet the requirements of today's light and thin products. Therefore, when designing an operational amplifier with a switchable bandwidth, it is necessary to achieve both good stability of the operational amplifier and a small circuit area, which is a preferred circuit design.

本案提供一種運算放大器,包含電流鏡電路、輸入與增益級電路、輸出級電路、偏壓補償電路及控制電路。電流鏡電路用以產生偏壓電流。輸入與增益級電路耦接電流鏡電路,輸入與增益級電路用以根據一差動輸入訊號及偏壓電流產生一增益偏壓。輸出級電路耦接電流鏡電路及輸入與增益級電路,輸出級電路用以根據偏壓電流及增益偏壓產生一輸出訊號。偏壓補償電路,並聯於輸出級電路,偏壓補償電路用以調整增益偏壓。偏壓補償電路包含複數第一N型電晶體、複數第一開關、複數第一P型電晶體及複數第二開關。複數第一N型電晶體之間互為並聯。各第一開關耦接各第一N型電晶體之控制端。複數第一P型電晶體之間互為並聯且複數第一P型電晶體並聯於複數第一N型電晶體。各第二開關耦接各第一P型電晶體之控制端。控制電路用以控制第一開關及第二開關分別為導通或截止,以改變第一N型電晶體之間的並聯數量及第一P型電晶體之間的並聯數量,以調整前述之增益偏壓。The present invention provides an operational amplifier comprising a current mirror circuit, an input and gain stage circuit, an output stage circuit, a bias compensation circuit, and a control circuit. A current mirror circuit is used to generate a bias current. The input and gain stage circuits are coupled to the current mirror circuit, and the input and gain stage circuits are configured to generate a gain bias based on a differential input signal and a bias current. The output stage circuit is coupled to the current mirror circuit and the input and gain stage circuits, and the output stage circuit is configured to generate an output signal according to the bias current and the gain bias. The bias compensation circuit is connected in parallel to the output stage circuit, and the bias compensation circuit is used to adjust the gain bias. The bias compensation circuit includes a plurality of first N-type transistors, a plurality of first switches, a plurality of first P-type transistors, and a plurality of second switches. The plurality of first N-type transistors are connected in parallel with each other. Each of the first switches is coupled to a control end of each of the first N-type transistors. The plurality of first P-type transistors are connected in parallel with each other and the plurality of first P-type transistors are connected in parallel to the plurality of first N-type transistors. Each of the second switches is coupled to the control ends of the first P-type transistors. The control circuit is configured to control the first switch and the second switch to be turned on or off, respectively, to change the number of parallel connections between the first N-type transistors and the number of parallel connections between the first P-type transistors to adjust the aforementioned gain offset Pressure.

請合併參照圖1及圖2,圖1為根據本案之運算放大器1之一實施例之方塊示意圖,圖2為圖1之運算放大器之一實施態樣之電路圖。運算放大器1包含電流鏡電路11、輸入與增益級電路12、輸出級電路13、偏壓補償電路14及控制電路15。其中,輸出級電路13耦接輸入與增益級電路12,電流鏡電路11耦接輸入與增益級電路12及輸出級電路13,偏壓補償電路14並聯於輸出級電路13,控制電路15耦接偏壓補償電路14。1 and FIG. 2, FIG. 1 is a block diagram of an embodiment of an operational amplifier 1 according to the present invention, and FIG. 2 is a circuit diagram of an embodiment of the operational amplifier of FIG. 1. The operational amplifier 1 includes a current mirror circuit 11, an input and gain stage circuit 12, an output stage circuit 13, a bias compensation circuit 14, and a control circuit 15. The output stage circuit 13 is coupled to the input and gain stage circuit 12. The current mirror circuit 11 is coupled to the input and gain stage circuit 12 and the output stage circuit 13. The bias compensation circuit 14 is connected in parallel to the output stage circuit 13. The control circuit 15 is coupled. Bias compensation circuit 14.

如圖2所示,電流鏡電路11用以提供一偏壓電流I2,輸入與增益級電路12及輸出級電路13根據電流鏡電路11產生之偏壓電流I2運作。輸入與增益級電路12具有雙端之差動輸入端IN1、IN2。輸入與增益級電路12接收差動輸入訊號,輸入與增益級電路12以偏壓電流I2根據其電路組態產生之增益(gain)在輸入與增益級電路12與輸出級電路13之間之節點N1、N2產生一增益偏壓,輸出級電路13再根據偏壓電流I2及前述之增益偏壓將差動輸入訊號放大而在輸出端OUT產生輸出訊號。As shown in FIG. 2, the current mirror circuit 11 is used to provide a bias current I2, and the input and gain stage circuit 12 and the output stage circuit 13 operate according to the bias current I2 generated by the current mirror circuit 11. The input and gain stage circuit 12 has double-ended differential input terminals IN1, IN2. The input and gain stage circuit 12 receives the differential input signal, and the input and gain stage circuit 12 uses the gain generated by the bias current I2 according to its circuit configuration at the node between the input and gain stage circuit 12 and the output stage circuit 13. N1 and N2 generate a gain bias, and the output stage circuit 13 amplifies the differential input signal according to the bias current I2 and the aforementioned gain bias to generate an output signal at the output terminal OUT.

偏壓補償電路14則受控於控制電路15,偏壓補償電路14能改變輸入與增益級電路12在節點N1、N2產生之增益偏壓,使輸出級電路13根據不同之增益偏壓產生輸出訊號,也就是運算放大器1具有可切換之不同頻寬,運算放大器1能支援高頻或低頻之應用。The bias compensation circuit 14 is then controlled by a control circuit 15, which can vary the gain bias generated by the input and gain stage circuit 12 at nodes N1, N2, causing the output stage circuit 13 to produce an output based on different gain biases. The signal, that is, the operational amplifier 1 has different bandwidths that can be switched, and the operational amplifier 1 can support high frequency or low frequency applications.

詳細而言,請合併參照圖2及圖3,偏壓補償電路14包含複數第一N型電晶體MN11、MN12、MN13、複數第一P型電晶體MP11、MP12、MP13、複數第一開關S11、S12、S13及複數第二開關S21、S22、S23。其中,圖2係以偏壓補償電路14包含等效之第一N型電晶體MN1及等效之第一P型電晶體MP1分別表示第一N型電晶體MN11、MN12、MN13及第一P型電晶體MP11、MP12、MP13為例,且圖3係以偏壓補償電路14包含三個第一N型電晶體MN11、MN12及MN13及三個第一P型電晶體MP11、MP12、MP13為例,然本案不以此為限,偏壓補償電路14亦可包含其他數量之N型電晶體及P型電晶體。In detail, referring to FIG. 2 and FIG. 3 together, the bias compensation circuit 14 includes a plurality of first N-type transistors MN11, MN12, MN13, a plurality of first P-type transistors MP11, MP12, MP13, and a plurality of first switches S11. , S12, S13 and a plurality of second switches S21, S22, S23. 2, the bias compensation circuit 14 includes an equivalent first N-type transistor MN1 and an equivalent first P-type transistor MP1 to represent the first N-type transistors MN11, MN12, MN13, and the first P, respectively. The types of transistors MP11, MP12, and MP13 are taken as an example, and FIG. 3 is a bias compensation circuit 14 including three first N-type transistors MN11, MN12, and MN13 and three first P-type transistors MP11, MP12, and MP13. For example, the present invention is not limited thereto, and the bias compensation circuit 14 may also include other numbers of N-type transistors and P-type transistors.

在一實施例中,第一N型電晶體MN11、MN12、MN13與複數第一P型電晶體MP11、MP12、MP13可稱為頭尾配合相連電晶體元件(mesh of head-to-tail connected transistors)。如圖2及圖3所示,第一N型電晶體MN11、MN12、MN13耦接在節點N1與節點N2之間,第一N型電晶體MN11、MN12、MN13之間互為並聯,且各第一開關S11、S12、S13分別耦接各第一N型電晶體MN11、MN12、MN13之控制端,即第一開關S11耦接第一N型電晶體MN11之控制端,第一開關S12耦接第一N型電晶體MN12之控制端,且第一開關S13耦接第一N型電晶體MN13之控制端;第一開關S11、S12、S13係受控於控制電路15,控制電路15能分別控制第一開關S11、S12、S13為導通或截止,以改變第一N型電晶體MN11、MN12、MN13之間的電晶體並聯數量,使等效之第一N型電晶體MN1具有不同的長寬比(W/L ratio),即等效之第一N型電晶體MN1具有可切換之尺寸。In one embodiment, the first N-type transistors MN11, MN12, MN13 and the plurality of first P-type transistors MP11, MP12, MP13 may be referred to as mesh of head-to-tail connected transistors. ). As shown in FIG. 2 and FIG. 3, the first N-type transistors MN11, MN12, and MN13 are coupled between the node N1 and the node N2, and the first N-type transistors MN11, MN12, and MN13 are connected in parallel with each other. The first switch S11, S12, and S13 are respectively coupled to the control ends of the first N-type transistors MN11, MN12, and MN13, that is, the first switch S11 is coupled to the control end of the first N-type transistor MN11, and the first switch S12 is coupled. Connected to the control terminal of the first N-type transistor MN12, and the first switch S13 is coupled to the control terminal of the first N-type transistor MN13; the first switch S11, S12, S13 is controlled by the control circuit 15, and the control circuit 15 can Controlling the first switches S11, S12, and S13 to be turned on or off, respectively, to change the number of parallel transistors in the first N-type transistors MN11, MN12, and MN13, so that the equivalent first N-type transistors MN1 have different The aspect ratio (W/L ratio), that is, the equivalent first N-type transistor MN1 has a switchable size.

舉例來說,當控制電路15控制第一開關S11導通且第一開關S12、S13截止時,第一N型電晶體MN11為導通而第一N型電晶體MN12、MN13為截止,第一N型電晶體MN11、MN12、MN13之間的電晶體並聯數量為一;當控制電路15控制第一開關S11截止且第一開關S12、S13導通時,第一N型電晶體MN11為截止而第一N型電晶體MN12、MN13為導通,第一N型電晶體MN11、MN12、MN13之間的電晶體並聯數量為二;當控制電路15控制第一開關S11、S12、S13均導通時,第一N型電晶體MN11、MN12、MN13均為導通,第一N型電晶體MN11、MN12、MN13之間的電晶體並聯數量為三;其餘則依此類推,於此不再贅述。當導通之第一N型電晶體MN11、MN12、MN13之數量愈多時,等效之第一N型電晶體MN1具有較大的尺寸。For example, when the control circuit 15 controls the first switch S11 to be turned on and the first switches S12, S13 are turned off, the first N-type transistor MN11 is turned on and the first N-type transistors MN12, MN13 are turned off, the first N-type The number of transistors connected in parallel between the transistors MN11, MN12, MN13 is one; when the control circuit 15 controls the first switch S11 to be turned off and the first switches S12, S13 are turned on, the first N-type transistor MN11 is turned off and the first N The transistors MN12 and MN13 are turned on, and the number of transistors connected in parallel between the first N-type transistors MN11, MN12, and MN13 is two; when the control circuit 15 controls the first switches S11, S12, and S13 to be turned on, the first N The transistors MN11, MN12, and MN13 are all turned on, and the number of transistors connected in parallel between the first N-type transistors MN11, MN12, and MN13 is three; the rest is the same, and will not be described again. When the number of the first N-type transistors MN11, MN12, MN13 is turned on, the equivalent first N-type transistor MN1 has a larger size.

再者,第一P型電晶體MP11、MP12、MP13耦接在節點N1與節點N2之間,第一P型電晶體MP11、MP12、MP13之間互為並聯,且第一P型電晶體MP11、MP12、MP13與第一N型電晶體MN11、MN12、MN13之間亦互為並聯。各第二開關S21、S22、S23分別耦接各第一P型電晶體MP11、MP12、MP13之控制端,即第二開關S21耦接第一P型電晶體MP11之控制端,第二開關S22耦接第一P型電晶體MP12之控制端,且第二開關S23耦接第一P型電晶體MP13之控制端。第二開關S21、S22、S23係受控於控制電路15,控制電路15能分別控制第二開關S21、S22、S23為導通或截止,以改變第一P型電晶體MP11、MP12、MP13之間的電晶體並聯數量,使等效之第一P型電晶體MP1具有不同的長寬比(W/L ratio),即等效之第一P型電晶體MP1具有可切換之尺寸。Furthermore, the first P-type transistors MP11, MP12, and MP13 are coupled between the node N1 and the node N2, and the first P-type transistors MP11, MP12, and MP13 are connected in parallel with each other, and the first P-type transistor MP11 is connected. The MP12, MP13 and the first N-type transistors MN11, MN12, and MN13 are also connected in parallel with each other. The second switches S21, S22, and S23 are respectively coupled to the control ends of the first P-type transistors MP11, MP12, and MP13, that is, the second switch S21 is coupled to the control end of the first P-type transistor MP11, and the second switch S22 The control terminal of the first P-type transistor MP12 is coupled to the control terminal of the first P-type transistor MP13. The second switches S21, S22, and S23 are controlled by the control circuit 15, and the control circuit 15 can respectively control the second switches S21, S22, and S23 to be turned on or off to change between the first P-type transistors MP11, MP12, and MP13. The number of transistors in parallel is such that the equivalent first P-type transistor MP1 has a different aspect ratio (W/L ratio), that is, the equivalent first P-type transistor MP1 has a switchable size.

舉例來說,當控制電路15控制第二開關S21導通且第二開關S22、S23截止時,第一P型電晶體MP11為導通而第一P型電晶體MP12、MP13為截止,第一P型電晶體MP11、MP12、MP13之間的電晶體並聯數量為一;當控制電路15控制第二開關S21截止且第二開關S22、S23導通時,第一P型電晶體MP11為截止而第一P型電晶體MP12、MP13為導通,第一P型電晶體MP11、MP12、MP13之間的電晶體並聯數量為二;當控制電路15控制第二開關S21、S22、S23均導通時,第一P型電晶體MP11、MP12、MP13均為導通,第一P型電晶體MP11、MP12、MP13之間的電晶體並聯數量為三;其餘則依此類推,於此不再贅述。當導通之第一P型電晶體MP11、MP12、MP13之數量愈多時,等效之第一P型電晶體MP1具有較大的尺寸。For example, when the control circuit 15 controls the second switch S21 to be turned on and the second switches S22, S23 are turned off, the first P-type transistor MP11 is turned on and the first P-type transistors MP12, MP13 are turned off, the first P-type The number of transistors connected in parallel between the transistors MP11, MP12, and MP13 is one; when the control circuit 15 controls the second switch S21 to be turned off and the second switches S22 and S23 are turned on, the first P-type transistor MP11 is turned off and the first P The transistors MP12 and MP13 are turned on, and the number of transistors connected in parallel between the first P-type transistors MP11, MP12, and MP13 is two; when the control circuit 15 controls the second switches S21, S22, and S23 to be turned on, the first P The transistors MP11, MP12, and MP13 are all turned on, and the number of transistors connected in parallel between the first P-type transistors MP11, MP12, and MP13 is three; the rest is the same, and will not be described again. When the number of the first P-type transistors MP11, MP12, MP13 turned on is greater, the equivalent first P-type transistor MP1 has a larger size.

基此,根據等效之第一N型電晶體MN1及第一P型電晶體MN1之不同尺寸,偏壓補償電路14能切換改變輸入與增益級電路12產生之增益偏壓,使運算放大器1根據不同的增益偏壓產生對應之輸出訊號。換言之,根據不同的增益偏壓,運算放大器1之極點移動而具有不同的操作頻寬。其中,若等效之第一N型電晶體MN1及等效之第一P型電晶體MP1的尺寸愈大,運算放大器1之操作頻寬愈趨於高頻,若等效之第一N型電晶體MN1及等效之第一P型電晶體MP1的尺寸愈小,運算放大器1之操作頻寬則愈趨於低頻。於是,運算放大器1能支援高頻或低頻之應用。當運算放大器1欲使用在高頻的環境中時,控制電路15能控制較多數量(例如,三)之第一開關S11、S12、S13為導通並控制較多數量(例如,三)之第二開關S21、S22、S23為導通,使等效之第一N型電晶體MN1及等效之第一P型電晶體MP1具有較大的尺寸,也就是運算放大器1之操作頻寬較高,運算放大器1能達到高速之目的;反之,當運算放大器1欲使用在低頻的環境中時,控制電路15能控制較少數量(例如,一)之第一開關S11、S12、S13為導通並控制較少數量(例如,一)之第二開關S21、S22、S23為導通,使等效之第一N型電晶體MN1及等效之第一P型電晶體MP1具有較小的尺寸,也就是運算放大器1之操作頻寬較低,運算放大器1能達到省電之目的。Accordingly, according to different sizes of the equivalent first N-type transistor MN1 and the first P-type transistor MN1, the bias compensation circuit 14 can switch the gain bias generated by the input and gain stage circuit 12 to make the operational amplifier 1 Corresponding output signals are generated according to different gain biases. In other words, depending on the gain bias, the poles of the operational amplifier 1 move to have different operating bandwidths. Wherein, if the size of the equivalent first N-type transistor MN1 and the equivalent first P-type transistor MP1 is larger, the operating bandwidth of the operational amplifier 1 becomes higher frequency, if the first N-type is equivalent The smaller the size of the transistor MN1 and the equivalent first P-type transistor MP1, the more the operating bandwidth of the operational amplifier 1 is lower. Thus, the operational amplifier 1 can support high frequency or low frequency applications. When the operational amplifier 1 is to be used in a high frequency environment, the control circuit 15 can control a larger number (for example, three) of the first switches S11, S12, S13 to be turned on and control a larger number (for example, three) The two switches S21, S22, and S23 are turned on, so that the equivalent first N-type transistor MN1 and the equivalent first P-type transistor MP1 have a larger size, that is, the operational bandwidth of the operational amplifier 1 is higher. The operational amplifier 1 can achieve high speed; conversely, when the operational amplifier 1 is to be used in a low frequency environment, the control circuit 15 can control a small number (for example, one) of the first switches S11, S12, S13 to be turned on and controlled. A smaller number (for example, one) of the second switches S21, S22, S23 is turned on, so that the equivalent first N-type transistor MN1 and the equivalent first P-type transistor MP1 have a smaller size, that is, The operating bandwidth of the operational amplifier 1 is low, and the operational amplifier 1 can achieve the purpose of power saving.

在一實施例中,如圖2所示,輸入與增益級電路12更包含增益電路121、122,增益電路121、122分別連接節點N1、N2,且增益電路121、122係經由節點N1、N2耦接偏壓補償電路14。再者,以第一N型電晶體MN11、MN12、MN13及第一P型電晶體MP11、MP12、MP13為MOSFET為例,如圖2及圖3所示,第一N型電晶體MN11、MN12、MN13之汲極端與源極端分別連接節點N1、N2,第一N型電晶體MN11、MN12、MN13互為並聯,第一P型電晶體MP11、MP12、MP13之源極端與汲極端分別連接節點N1、N2,第一P型電晶體MP11、MP12、MP13互為並聯,且開關S11-S13、S21-S23分別連接第一P型電晶體MP11、MP12、MP13及第一P型電晶體MP11、MP12、MP13之閘極端。In an embodiment, as shown in FIG. 2, the input and gain stage circuit 12 further includes gain circuits 121 and 122. The gain circuits 121 and 122 are respectively connected to the nodes N1 and N2, and the gain circuits 121 and 122 are connected to the nodes N1 and N2. The bias compensation circuit 14 is coupled. Furthermore, the first N-type transistors MN11, MN12, MN13 and the first P-type transistors MP11, MP12, and MP13 are MOSFETs as an example. As shown in FIG. 2 and FIG. 3, the first N-type transistors MN11 and MN12 are used. MN13 is connected to nodes N1 and N2 respectively, and the first N-type transistors MN11, MN12, and MN13 are connected in parallel with each other. The source terminals of the first P-type transistors MP11, MP12, and MP13 are respectively connected to the 汲 terminal. N1, N2, the first P-type transistors MP11, MP12, MP13 are connected in parallel with each other, and the switches S11-S13, S21-S23 are respectively connected to the first P-type transistors MP11, MP12, MP13 and the first P-type transistor MP11, The gates of MP12 and MP13 are extreme.

在一實施例中,如圖2所示,輸出級電路13包含第二N型電晶體MN2及第二P型電晶體MP2。第二P型電晶體MP2之控制端(以第二N型電晶體MN2及第二P型電晶體MP2為MOSFET為例,控制端即閘極端)耦接節點N1,且第二P型電晶體MP2之控制端經由節點N1耦接第一P型電晶體MP11、MP12、MP13之源極端以及第一N型電晶體MN11、MN12、MN13之汲極端;第二N型電晶體MN2之控制端耦接節點N2,且第二N型電晶體MN2之控制端經由節點N2耦接第一P型電晶體MP11、MP12、MP13之汲極端及第一N型電晶體MN11、MN12、MN13之源極端。再者,第二N型電晶體MN2之控制端及第二P型電晶體MP2之控制端之間之連接點N3係作為運算放大器1之輸出端OUT,即連接點N3產生前述之輸出訊號。In one embodiment, as shown in FIG. 2, the output stage circuit 13 includes a second N-type transistor MN2 and a second P-type transistor MP2. The control terminal of the second P-type transistor MP2 (taking the second N-type transistor MN2 and the second P-type transistor MP2 as a MOSFET as an example, the control terminal is the gate terminal) is coupled to the node N1, and the second P-type transistor The control terminal of the MP2 is coupled to the source terminal of the first P-type transistor MP11, MP12, and MP13 and the 汲 terminal of the first N-type transistor MN11, MN12, and MN13 via the node N1; and the control terminal coupling of the second N-type transistor MN2 The node N2 is connected, and the control terminal of the second N-type transistor MN2 is coupled to the drain terminal of the first P-type transistors MP11, MP12, and MP13 and the source terminals of the first N-type transistors MN11, MN12, and MN13 via the node N2. Furthermore, the connection point N3 between the control terminal of the second N-type transistor MN2 and the control terminal of the second P-type transistor MP2 serves as the output terminal OUT of the operational amplifier 1, that is, the connection point N3 generates the aforementioned output signal.

在一實施例中,請合併參照圖2及圖4,偏壓補償電路14更包含複數電阻R11-R13、R21-R23形成之電阻陣列、複數電容C11-C13、C21-C23形成之電容陣列以及複數第三開關S31-S33、S61-S63及複數第四開關S41-S43、S51-S53。其中,圖2係以等效電阻R1、R2表示等效之電阻陣列且以等效電容C1、C2表示等效之電容陣列為例,且圖4係以偏壓補償電路14包含六個電阻R11-R13、R21-R23與相應之六個開關S31-S33、S61-S63以及六個電容C11-C13、C21-C23與相應之六個開關S41-S43、S51-S53為例,然本案不以此為限,電阻陣列與電容陣列亦可分別包含其他數量之電阻與電容。In an embodiment, referring to FIG. 2 and FIG. 4 together, the bias compensation circuit 14 further includes a resistor array formed by a plurality of resistors R11-R13, R21-R23, a capacitor array formed by a plurality of capacitors C11-C13, C21-C23, and The third switches S31-S33, S61-S63 and the plurality of fourth switches S41-S43, S51-S53. 2 is an example of an equivalent resistor R1, R2 representing an equivalent resistor array and an equivalent capacitor C1, C2 representing an equivalent capacitor array, and FIG. 4 is a bias compensation circuit 14 comprising six resistors R11 -R13, R21-R23 and the corresponding six switches S31-S33, S61-S63 and six capacitors C11-C13, C21-C23 and the corresponding six switches S41-S43, S51-S53 as an example, but this case does not To this end, the resistor array and the capacitor array may also contain other numbers of resistors and capacitors, respectively.

如圖2及圖4所示,電阻陣列與電容陣列耦接在節點N1與節點N2之間,即電阻陣列與電容陣列係耦接在第二P型電晶體MP2之控制端與第二N型電晶體MN2之控制端之間,電阻陣列與電容陣列並聯於第一N型電晶體MN11-MN13及第一P型電晶體MP11-MP13。更進一步來看,如圖4所示,電阻R11、R12、R13與第三開關S31、S32、S33以及電容C11、C12、C13與第四開關S41、S42、S43係耦接在節點N1與輸出端OUT之間;電容C21、C22、C23與第四開關S51、S52、S53以及電阻R21、R22、R23與第三開關S61、S62、S63係耦接在輸出端OUT與節點N2之間。其中,電阻R11、R12、R13之間互為並聯,且電阻R11、R12、R13分別串聯於第三開關S31、S32、S33;電容C11、C12、C13之間互為並聯,且電容C11、C12、C13分別串聯於第四開關S41、S42、S43;電容C21、C22、C23之間互為並聯,且電容C21、C22、C23分別串聯於第四開關S51、S52、S53;電阻R21、R22、R23之間互為並聯,且電阻R21、R22、R23分別串聯於第三開關S61、S62、S63。As shown in FIG. 2 and FIG. 4, the resistor array and the capacitor array are coupled between the node N1 and the node N2, that is, the resistor array and the capacitor array are coupled to the control end of the second P-type transistor MP2 and the second N-type. Between the control terminals of the transistor MN2, the resistor array and the capacitor array are connected in parallel to the first N-type transistors MN11-MN13 and the first P-type transistors MP11-MP13. Further, as shown in FIG. 4, the resistors R11, R12, and R13 and the third switches S31, S32, and S33 and the capacitors C11, C12, and C13 are coupled to the fourth switch S41, S42, and S43 at the node N1 and the output. Between the terminals OUT; the capacitors C21, C22, C23 and the fourth switches S51, S52, S53 and the resistors R21, R22, R23 and the third switches S61, S62, S63 are coupled between the output terminal OUT and the node N2. Wherein, the resistors R11, R12, and R13 are connected in parallel with each other, and the resistors R11, R12, and R13 are respectively connected in series to the third switches S31, S32, and S33; the capacitors C11, C12, and C13 are connected in parallel with each other, and the capacitors C11 and C12 are connected. C13 is connected in series to the fourth switch S41, S42, S43; the capacitors C21, C22, C23 are connected in parallel with each other, and the capacitors C21, C22, C23 are respectively connected in series to the fourth switch S51, S52, S53; the resistors R21, R22, R23 is connected in parallel with each other, and resistors R21, R22, and R23 are connected in series to the third switches S61, S62, and S63, respectively.

基此,控制電路15能分別控制第三開關S31、S32、S33為導通或截止,以改變電阻R11、R12、R13之間之電阻並聯數量,且控制電路15能分別控制第四開關S41、S42、S43為導通或截止,以改變電容C11、C12、C13之間之電容並聯數量,且控制電路15能分別控制第三開關S61、S62、S63為導通或截止,以改變電阻R21、R22、R23之間之電阻並聯數量,且控制電路15能分別控制第四開關S51、S52、S53為導通或截止,以改變電容C21、C22、C23之間之電容並聯數量。控制電路15能藉由改變前述之電阻並聯數量與電容並聯數量而切換於節點N1、N2的增益偏壓,使輸出級電路13根據不同的增益偏壓產生對應的輸出訊號,即運算放大器1具有不同的操作頻寬。Therefore, the control circuit 15 can respectively control the third switches S31, S32, and S33 to be turned on or off to change the number of parallel connections between the resistors R11, R12, and R13, and the control circuit 15 can respectively control the fourth switches S41 and S42. S43 is turned on or off to change the number of capacitors in parallel between capacitors C11, C12, and C13, and the control circuit 15 can respectively control the third switches S61, S62, and S63 to be turned on or off to change the resistors R21, R22, and R23. The number of resistors in parallel is paralleled, and the control circuit 15 can respectively control the fourth switches S51, S52, and S53 to be turned on or off to change the number of parallel connections between the capacitors C21, C22, and C23. The control circuit 15 can switch the gain biases of the nodes N1 and N2 by changing the number of parallel parallel connections and the number of capacitors in parallel, so that the output stage circuit 13 generates corresponding output signals according to different gain biases, that is, the operational amplifier 1 has Different operating bandwidths.

舉例來說,若運算放大器1欲操作在高頻的應用中,控制電路15可控制第三開關S31、S32、S33中較多數量(例如,三)之開關為導通並控制第三開關S61、S62、S63中較多數量(例如,三)之開關為導通,且控制電路15控制第四開關S41、S42、S43中較少數量(例如,一)之開關為導通並控制第四開關S51、S52、S53中較少數量(例如,一)之開關為導通,使節點N1與N2之間具有較小的電阻值及電容值;反之,若運算放大器1欲操作在低頻的應用中,控制電路15可控制第三開關S31、S32、S33中較少數量(例如,一)之開關為導通並控制第三開關S61、S62、S63中較少數量(例如,一)之開關為導通,且控制電路15控制第四開關S41、S42、S43中較多數量(例如,三)之開關為導通並控制第四開關S51、S52、S53中較多數量(例如,三)之開關為導通,使節點N1、N2之間具有較大的電阻值及電容值。基此,節點N1、N2之間之電阻陣列的不同電阻值與電容陣列之不同電容值能搭配等效之第一N型電晶體MN1之不同電晶體尺寸以及等效之第一P型電晶體MP1之不同電晶體尺寸,使運算放大器1具有對應之操作頻寬而符合其應用之產品。For example, if the operational amplifier 1 is to be operated in a high frequency application, the control circuit 15 can control a larger number (eg, three) of the third switches S31, S32, S33 to be turned on and control the third switch S61, A plurality of (for example, three) switches of S62 and S63 are turned on, and the control circuit 15 controls a smaller number (for example, one) of the switches of the fourth switches S41, S42, and S43 to be turned on and controls the fourth switch S51, A small number (for example, one) of the switches in S52 and S53 is turned on, so that a small resistance value and a capacitance value are obtained between the nodes N1 and N2; conversely, if the operational amplifier 1 is to be operated in a low frequency application, the control circuit 15 can control a smaller number (eg, one) of the third switches S31, S32, S33 to be turned on and control a smaller number (eg, one) of the third switches S61, S62, S63 to be turned on, and control The circuit 15 controls a plurality of (for example, three) switches of the fourth switches S41, S42, and S43 to be turned on and controls a plurality of (eg, three) switches of the fourth switches S51, S52, and S53 to be turned on, so that the nodes are turned on. Large resistance between N1 and N2 Capacitance value. Therefore, the different resistance values of the resistor array between the nodes N1 and N2 and the different capacitance values of the capacitor array can be matched with the different transistor sizes of the equivalent first N-type transistor MN1 and the equivalent first P-type transistor. The different transistor sizes of MP1 enable the op amp 1 to have a corresponding operating bandwidth to match the application.

在一實施例中,電流鏡電路11係產生電流大小可切換之偏壓電流I2。如圖2、圖5及圖6所示,電流鏡電路11包含複數輸入電晶體M11、M12、M13、複數第五開關S71、S72、S73、複數輸出電晶體M21、M22、M23及複數第六開關S81、S82、S83。其中,圖2係以等效之輸入電晶體M1表示輸入電晶體M11、M12、M13,且以等效之輸出電晶體M2表示輸出電晶體M21、M22、M23;並且,圖5及圖6係以電流鏡電路11包含三個輸入電晶體M11-M13及三個輸出電晶體M21-M23為例,然本案不以此為限制,電流鏡電路11可包含其他數量之輸入電晶體及輸出電晶體。In one embodiment, the current mirror circuit 11 produces a bias current I2 that is switchable in current magnitude. As shown in FIG. 2, FIG. 5 and FIG. 6, the current mirror circuit 11 includes a plurality of input transistors M11, M12, M13, a plurality of fifth switches S71, S72, and S73, a plurality of output transistors M21, M22, and M23, and a sixth plurality. Switches S81, S82, and S83. 2, the input transistors M11, M12, M13 are represented by an equivalent input transistor M1, and the output transistors M21, M22, M23 are represented by an equivalent output transistor M2; and, FIG. 5 and FIG. The current mirror circuit 11 includes three input transistors M11-M13 and three output transistors M21-M23 as an example. However, the present invention is not limited thereto. The current mirror circuit 11 may include other numbers of input transistors and output transistors. .

以輸入電晶體M11、M12、M13及輸出電晶體M21、M22、M23為MOSFET為例,每一輸入電晶體M11、M12、M13之閘極端與汲極端相連接,且輸入電晶體M11、M12、M13之間互為並聯,即輸入電晶體M11、M12、M13之汲極端之間相互連接且輸入電晶體M11、M12、M13之源極端之間相互連接,輸入電晶體M11、M12、M13之閘極端分別耦接第五開關S71、S72、S73。輸出電晶體M21、M22、M23之間互為並聯,即輸出電晶體M21、M22、M23之汲極端之間相互連接且輸出電晶體M21、M22、M23之源極端之間相互連接,輸出電晶體M21、M22、M23之閘極端分別耦接第六開關S81、S82、S83。Taking input transistors M11, M12, M13 and output transistors M21, M22, M23 as MOSFETs, the gate terminals of each input transistor M11, M12, M13 are connected to the 汲 terminal, and the input transistors M11, M12, M13 is connected in parallel with each other, that is, the anode terminals of the input transistors M11, M12, and M13 are connected to each other and the source terminals of the input transistors M11, M12, and M13 are connected to each other, and the gates of the input transistors M11, M12, and M13 are connected. The fifth switches S71, S72, and S73 are coupled to the terminals. The output transistors M21, M22, and M23 are connected in parallel with each other, that is, the anode terminals of the output transistors M21, M22, and M23 are connected to each other and the source terminals of the output transistors M21, M22, and M23 are connected to each other, and the output transistor is connected. The gate terminals of M21, M22, and M23 are respectively coupled to the sixth switches S81, S82, and S83.

請合併參照圖2、圖5及圖6,輸入電晶體M11-M13係接收參考電流I1,輸出電晶體M21-M23等比例地根據參考電流I1產生為鏡電流之偏壓電流I2(其中,偏壓電流I2與參考電流I1之比值等於等效之輸出電晶體M2之長寬比與等效之輸入電晶體M1之長寬比之比值)。於是,控制電路15能分別控制第五開關S71、S72、S73及第六開關S81、S82、S83為導通或截止。當第五開關S71、S72、S73導通,輸入電晶體M11、M12、M13導通,當第五開關S71、S72、S73截止,輸入電晶體M11、M12、M13截止;當第六開關S81、S82、S83導通,輸出電晶體M21、M22、M23導通,當第六開關S81、S82、S83截止,輸出電晶體M21、M22、M23截止。根據輸入電晶體M11、M12、M13之導通或截止,控制電路15能控制輸入電晶體M11、M12、M13之間的電晶體並聯數量,使等效之輸入電晶體M1具有不同的長寬比;根據輸出電晶體M21、M22、M23之導通或截止,控制電路15能控制輸出電晶體M21、M22、M23之間的電晶體並聯數量,使等效之輸出電晶體M2具有不同的長寬比;於是,根據等效之輸入電晶體M1及等效之輸出電晶體M2之不同長寬比,電流鏡電路11能產生具有不同電流大小之偏壓電流I2,也就是控制電路15能控制開關S71、S72、S73、S81、S82、S83為導通或截止而切換偏壓電流I2之電流大小。Referring to FIG. 2, FIG. 5 and FIG. 6, the input transistors M11-M13 receive the reference current I1, and the output transistors M21-M23 are proportionally generated as the mirror current bias current I2 according to the reference current I1 (wherein The ratio of the voltage current I2 to the reference current I1 is equal to the ratio of the aspect ratio of the equivalent output transistor M2 to the aspect ratio of the equivalent input transistor M1). Thus, the control circuit 15 can control the fifth switches S71, S72, S73 and the sixth switches S81, S82, S83 to be turned on or off, respectively. When the fifth switch S71, S72, S73 is turned on, the input transistors M11, M12, M13 are turned on, when the fifth switch S71, S72, S73 is turned off, the input transistors M11, M12, M13 are turned off; when the sixth switch S81, S82, When S83 is turned on, the output transistors M21, M22, and M23 are turned on, and when the sixth switches S81, S82, and S83 are turned off, the output transistors M21, M22, and M23 are turned off. According to the on or off of the input transistors M11, M12, M13, the control circuit 15 can control the number of parallel circuits of the transistors between the input transistors M11, M12, M13, so that the equivalent input transistors M1 have different aspect ratios; According to the on or off of the output transistors M21, M22, M23, the control circuit 15 can control the number of parallel circuits of the transistors between the output transistors M21, M22, M23, so that the equivalent output transistors M2 have different aspect ratios; Therefore, according to the different aspect ratios of the equivalent input transistor M1 and the equivalent output transistor M2, the current mirror circuit 11 can generate the bias current I2 having different current magnitudes, that is, the control circuit 15 can control the switch S71, S72, S73, S81, S82, and S83 are currents that switch the bias current I2 when turned on or off.

舉例來說,以輸入電晶體M11、M12、M13及輸出電晶體M21、M22、M23均具有相同的參數K值為例,若控制電路15控制開關S71、S81、S83為導通且開關S72、S73、S82為截止,則輸入電晶體M11及輸出電晶體M21、M23為導通且輸入電晶體M12、M13及輸出電晶體M22為截止,輸入電晶體M11、M12、M13之間的電晶體並聯數量(n)為一,輸出電晶體M21、M22、M23之間的電晶體並聯數量(m)為二,偏壓電流I2係為參考電流I1的兩倍(m/n即為2);若控制電路15控制開關S71、S72、S73、S81、S83為導通且開關S82為截止,則輸入電晶體M11、M12、M13及輸出電晶體M21、M23為導通且輸出電晶體M22為截止,輸入電晶體M11、M12、M13之間的電晶體並聯數量(n)為三,輸出電晶體M21、M22、M23之間的電晶體並聯數量(m)為二,偏壓電流I2係為參考電流I1的2/3倍(m/n即為2/3)。其餘則依此類推,於此不再贅述。For example, the input transistors M11, M12, M13 and the output transistors M21, M22, M23 all have the same parameter K value, if the control circuit 15 controls the switches S71, S81, S83 to be turned on and the switches S72, S73 When S82 is off, the input transistor M11 and the output transistors M21 and M23 are turned on, and the input transistors M12 and M13 and the output transistor M22 are turned off, and the number of transistors connected in the input transistors M11, M12, and M13 is parallel ( n) is one, the number of parallel transistors (m) between the output transistors M21, M22, M23 is two, and the bias current I2 is twice the reference current I1 (m/n is 2); if the control circuit 15 When the control switches S71, S72, S73, S81, and S83 are turned on and the switch S82 is turned off, the input transistors M11, M12, and M13 and the output transistors M21 and M23 are turned on and the output transistor M22 is turned off, and the input transistor M11 is turned off. The number of parallel transistors (n) between M12 and M13 is three, the number of parallel transistors (m) between output transistors M21, M22 and M23 is two, and the bias current I2 is 2/ of reference current I1. 3 times (m/n is 2/3). The rest will be deduced by analogy and will not be repeated here.

基此,若運算放大器1欲操作在高頻的應用中,控制電路15可控制電流鏡電路11產生較大之偏壓電流I2,若運算放大器1欲操作在低頻的應用中,控制電路15可控制電流鏡電路11產生較小之偏壓電流I2,使運算放大器1具有不同的操作頻寬,運算放大器1能同時支援高頻或低頻之應用。在一實施例中,輸入電晶體M11、M12、M13及輸出電晶體M21、M22、M23可為N型MOSFET或P型MOSFET。Accordingly, if the operational amplifier 1 is to be operated in a high frequency application, the control circuit 15 can control the current mirror circuit 11 to generate a large bias current I2. If the operational amplifier 1 is to be operated in a low frequency application, the control circuit 15 can The control current mirror circuit 11 generates a small bias current I2, which causes the operational amplifier 1 to have different operating bandwidths, and the operational amplifier 1 can simultaneously support high frequency or low frequency applications. In an embodiment, the input transistors M11, M12, M13 and the output transistors M21, M22, M23 may be N-type MOSFETs or P-type MOSFETs.

請參照圖7,圖7係為本案之開關S11-S13、S21-S23、S31-S33、S41-S43、S51-S53、S61-S63、S71-S73、S81-S83之一實施態樣之電路圖。開關S11-S13、S21-S23、S31-S33、S41-S43、S51-S53、S61-S63、S71-S73、S81-S83可包含PMOS電晶體及NMOS電晶體,PMOS電晶體及NMOS電晶體分別包含兩控制端C、CB,兩控制端C、CB係分別接收互為反向之兩控制訊號,互為反向之兩控制訊號能控制PMOS電晶體或NMOS電晶體為導通。Please refer to FIG. 7. FIG. 7 is a circuit diagram of an embodiment of the switches S11-S13, S21-S23, S31-S33, S41-S43, S51-S53, S61-S63, S71-S73, and S81-S83 of the present application. . The switches S11-S13, S21-S23, S31-S33, S41-S43, S51-S53, S61-S63, S71-S73, S81-S83 may include a PMOS transistor and an NMOS transistor, and the PMOS transistor and the NMOS transistor respectively The two control terminals C and CB are included, and the two control terminals C and CB respectively receive two control signals which are opposite to each other, and the two control signals which are opposite to each other can control the PMOS transistor or the NMOS transistor to be turned on.

綜上所述,根據本案之運算放大器之一實施例,運算放大器具有可切換之頻寬,能滿足不同頻寬的產品應用需求,且具有良好之穩定度(unit gain stable)。再者,藉由電流鏡電路切換運算放大器之偏壓電流具有設計簡單,電路佈局容易之優點,且以頭尾配合相連之電晶體元件搭配電阻電容之切換之設計,使運算放大器能切換之頻寬範圍較大,運算放大器可適用於低電流低頻寬至高電流高頻寬之大範圍之不同應用。In summary, according to one embodiment of the operational amplifier of the present invention, the operational amplifier has a switchable bandwidth, can meet the application requirements of different bandwidths, and has a good unit gain stable. Furthermore, by switching the bias current of the operational amplifier by the current mirror circuit, the design has the advantages of simple design and easy circuit layout, and the design of the switching between the transistor component and the resistor and capacitor connected with the head and the tail enables the operational amplifier to switch. With a wide range, op amps are available for a wide range of applications from low current low frequency to high current high frequency.

雖然本案已以實施例揭露如上然其並非用以限定本案,任何所屬技術領域中具有通常知識者,在不脫離本案之精神和範圍內,當可作些許之更動與潤飾,故本案之保護範圍當視後附之專利申請範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention. Any person having ordinary knowledge in the technical field can make some changes and refinements without departing from the spirit and scope of the present case. This is subject to the definition of the scope of the patent application.

1‧‧‧運算放大器 11‧‧‧電流鏡電路 M1‧‧‧等效之輸入電晶體 M2‧‧‧等效之輸出電晶體 M11-M13‧‧‧輸入電晶體 M21-M23‧‧‧輸出電晶體 S71-S73‧‧‧第五開關 S81-S83‧‧‧第六開關 12‧‧‧輸入與增益級電路 121‧‧‧增益電路 122‧‧‧增益電路 13‧‧‧輸出級電路 MN2‧‧‧第二N型電晶體 MP2‧‧‧第二P型電晶體 14‧‧‧偏壓補償電路 MN1‧‧‧等效之第一N型電晶體 MN11-MN13‧‧‧第一N型電晶體 S11-S13‧‧‧第一開關 S21-S23‧‧‧第二開關 MP1‧‧‧等效之第一P型電晶體 MP11-MP13‧‧‧第一P型電晶體 R1‧‧‧等效電阻 R11-R13‧‧‧電阻 R2‧‧‧等效電阻 R21-R23‧‧‧電阻 C1‧‧‧等效電容 C11-C13‧‧‧電容 C2‧‧‧等效電容 C21-C23‧‧‧電容 S31-S33‧‧‧第三開關 S41-S43‧‧‧第四開關 S51-S53‧‧‧第四開關 S61-S63‧‧‧第三開關 15‧‧‧控制電路 I1‧‧‧參考電流 I2‧‧‧偏壓電流 IN1‧‧‧差動輸入端 IN2‧‧‧差動輸入端 N1‧‧‧節點 N2‧‧‧節點 N3‧‧‧連接點 OUT‧‧‧輸出端 1‧‧‧Operational Amplifier  11‧‧‧current mirror circuit  M1‧‧‧ equivalent input transistor  M2‧‧‧ equivalent output transistor  M11-M13‧‧‧ input transistor  M21-M23‧‧‧ output transistor  S71-S73‧‧‧ fifth switch  S81-S83‧‧‧ sixth switch  12‧‧‧Input and gain stage circuits  121‧‧‧Gain circuit  122‧‧‧Gain circuit  13‧‧‧Output stage circuit  MN2‧‧‧Second N-type transistor  MP2‧‧‧Second P-type transistor  14‧‧‧Bias compensation circuit  MN1‧‧‧ equivalent first N-type transistor  MN11-MN13‧‧‧First N-type transistor  S11-S13‧‧‧ first switch  S21-S23‧‧‧Second switch  MP1‧‧‧ equivalent first P-type transistor  MP11-MP13‧‧‧First P-type transistor  R1‧‧‧ equivalent resistance  R11-R13‧‧‧ resistance  R2‧‧‧ equivalent resistance  R21-R23‧‧‧ resistance  C1‧‧‧ equivalent capacitance  C11-C13‧‧‧ capacitor  C2‧‧‧ equivalent capacitance  C21-C23‧‧‧ capacitor  S31-S33‧‧‧ third switch  S41-S43‧‧‧fourth switch  S51-S53‧‧‧fourth switch  S61-S63‧‧‧ third switch  15‧‧‧Control circuit  I1‧‧‧reference current  I2‧‧‧ bias current  IN1‧‧‧Differential input  IN2‧‧‧Differential input  N1‧‧‧ node  N2‧‧‧ node  N3‧‧‧ connection point  OUT‧‧‧ output  

[圖1] 為根據本案之運算放大器之一實施例之方塊示意圖。 [圖2] 為圖1之運算放大器之一實施態樣之電路圖。 [圖3] 為圖2之運算放大器之偏壓補償電路之一實施態樣之電路圖。 [圖4] 為圖2之運算放大器之偏壓補償電路之另一實施態樣之電路圖。 [圖5] 為圖2之電流鏡電路之輸入電晶體一實施態樣之電路圖。 [圖6] 為圖2之電流鏡電路之輸出電晶體一實施態樣之電路圖。 [圖7] 為本案之開關之一實施態樣之電路圖。 [Fig. 1] A block diagram showing an embodiment of an operational amplifier according to the present invention.  [Fig. 2] is a circuit diagram showing an embodiment of an operational amplifier of Fig. 1.  [Fig. 3] is a circuit diagram showing an embodiment of a bias compensation circuit of the operational amplifier of Fig. 2.  FIG. 4 is a circuit diagram of another embodiment of a bias compensation circuit of the operational amplifier of FIG. 2. FIG.  [Fig. 5] is a circuit diagram showing an embodiment of an input transistor of the current mirror circuit of Fig. 2.  Fig. 6 is a circuit diagram showing an embodiment of an output transistor of the current mirror circuit of Fig. 2.  [Fig. 7] A circuit diagram of an embodiment of the switch of the present invention.  

Claims (10)

一種運算放大器,包含:
一電流鏡電路,用以產生一偏壓電流;
一輸入與增益級電路,耦接該電流鏡電路,用以根據一輸入訊號及該偏壓電流產生一增益偏壓;
一輸出級電路,耦接該電流鏡電路及該輸入與增益級電路,用以根據該偏壓電流及該增益偏壓產生一輸出訊號;
一偏壓補償電路,並聯於該輸出級電路,用以調整該增益偏壓,包含:
複數第一N型電晶體,該些第一N型電晶體之間互為並聯;
複數第一開關,各該第一開關耦接各該第一N型電晶體之控制端;
複數第一P型電晶體,並聯於該些第一N型電晶體且該些第一P型電晶體之間互為並聯;及
複數第二開關,各該第二開關耦接各該第一P型電晶體之控制端;及
一控制電路,用以控制該些第一開關及該第二開關分別為導通或截止,以改變該些第一N型電晶體之間的並聯數量及該些第一P型電晶體之間的並聯數量,以調整該增益偏壓。
An operational amplifier comprising:
a current mirror circuit for generating a bias current;
An input and gain stage circuit coupled to the current mirror circuit for generating a gain bias according to an input signal and the bias current;
An output stage circuit coupled to the current mirror circuit and the input and gain stage circuit for generating an output signal according to the bias current and the gain bias;
A bias compensation circuit is coupled in parallel to the output stage circuit for adjusting the gain bias, comprising:
a plurality of first N-type transistors, wherein the first N-type transistors are connected in parallel with each other;
a plurality of first switches, each of the first switches being coupled to a control end of each of the first N-type transistors;
a plurality of first P-type transistors connected in parallel to the first N-type transistors and the first P-type transistors are connected in parallel with each other; and a plurality of second switches, each of the second switches being coupled to each of the first a control terminal of the P-type transistor; and a control circuit for controlling the first switch and the second switch to be turned on or off, respectively, to change the number of parallel connections between the first N-type transistors and the The number of parallels between the first P-type transistors to adjust the gain bias.
如請求項1所述之運算放大器,其中該偏壓補償電路更包含:
複數電阻,該些電阻之間互為並聯;
複數電容,串聯於該些電阻,且該些電容之間互為並聯;
複數第三開關,各該第三開關串聯於各該電阻;及
複數第四開關,各該第四開關串聯於各該電容;
其中,該控制電路更控制該些第三開關及該第四開關分別為導通或截止,以改變該些電阻之間的並聯數量及該些電容之間的並聯數量,以調整該增益偏壓。
The operational amplifier of claim 1, wherein the bias compensation circuit further comprises:
a plurality of resistors, the resistors being in parallel with each other;
a plurality of capacitors connected in series to the resistors, wherein the capacitors are connected in parallel with each other;
a plurality of third switches, each of the third switches being connected in series with each of the resistors; and a plurality of fourth switches, each of the fourth switches being connected in series to each of the capacitors;
The control circuit further controls the third switch and the fourth switch to be turned on or off, respectively, to change the number of parallels between the resistors and the number of parallel connections between the capacitors to adjust the gain bias.
如請求項2所述之運算放大器,其中該輸出級電路包含互為串聯之一第二N型電晶體及一第二P型電晶體,其中該些電阻、該些第三開關、該些電容及該些第四開關係耦接在該第二P型電晶體之閘極端與該第二N型電晶體之閘極端之間而並聯於該些第一N型電晶體及該些第一P型電晶體。The operational amplifier of claim 2, wherein the output stage circuit comprises a second N-type transistor and a second P-type transistor connected in series with each other, wherein the resistors, the third switches, and the capacitors And the fourth open relationship is coupled between the gate terminal of the second P-type transistor and the gate terminal of the second N-type transistor and connected to the first N-type transistor and the first P Type transistor. 如請求項3所述之運算放大器,其中該第二N型電晶體及該第二P型電晶體之間之一連接點產生該輸出訊號,其中部分之該些電阻、部分之該些第三開關、部分之該些電容及部分之該些第四開關係串聯於該第二P型電晶體之閘極端與該連接點之間,且另一部分之該些電阻、另一部分之該些第三開關、另一部分之該些電容及另一部分之該些第四開關係串聯於該第二N型電晶體之閘極端與該連接點之間。The operational amplifier of claim 3, wherein a connection point between the second N-type transistor and the second P-type transistor generates the output signal, wherein the portion of the resistors and the portions of the third portions The fourth open relationship of the switch, the portion of the capacitors and the portion is connected in series between the gate terminal of the second P-type transistor and the connection point, and the resistors of the other portion and the third portions of the other portion The fourth open relationship of the switch, the other portion of the capacitors, and another portion is connected in series between the gate terminal of the second N-type transistor and the connection point. 如請求項3或4所述之運算放大器,其中該些第一N型電晶體及該些第一P型電晶體係耦接在該第二N型電晶體之閘極端與該第二P型電晶體之閘極端之間。The operational amplifier of claim 3 or 4, wherein the first N-type transistors and the first P-type transistor systems are coupled to a gate terminal of the second N-type transistor and the second P-type Between the gate extremes of the transistor. 如請求項1所述之運算放大器,其中該電流鏡電路係產生電流大小可切換之該偏壓電流。The operational amplifier of claim 1, wherein the current mirror circuit generates the bias current whose current magnitude is switchable. 如請求項6所述之運算放大器,其中該電流鏡電路包含:
複數輸入電晶體,該些輸入電晶體之間互為並聯,且各該輸入電晶體係用以接收一參考電流;及
複數第五開關,各該第五開關耦接各該輸入電晶體之閘極端;
其中,該控制電路更控制該些第五開關為導通或截止,以改變該些輸入電晶體之間的並聯數量而改變該偏壓電流。
The operational amplifier of claim 6, wherein the current mirror circuit comprises:
a plurality of input transistors, wherein the input transistors are connected in parallel with each other, and each of the input cells is configured to receive a reference current; and a plurality of fifth switches, each of the fifth switches being coupled to each of the input transistors extreme;
The control circuit further controls the fifth switches to be turned on or off to change the number of parallel connections between the input transistors to change the bias current.
如請求項7所述之運算放大器,其中該電流鏡電路更包含:
複數輸出電晶體,該些輸入電晶體之間互為並聯,且該些輸出電晶體用以輸出該偏壓電流;及
複數第六開關,各該第六開關耦接各該輸出電晶體之閘極端;
其中,該控制電路更控制該些第六開關為導通或截止,以改變該些輸出電晶體之間的並聯數量而改變該偏壓電流。
The operational amplifier of claim 7, wherein the current mirror circuit further comprises:
a plurality of output transistors, wherein the input transistors are connected in parallel with each other, and the output transistors are used to output the bias current; and a plurality of sixth switches, each of the sixth switches being coupled to each of the output transistors extreme;
The control circuit further controls the sixth switches to be turned on or off to change the number of parallels between the output transistors to change the bias current.
如請求項1所述之運算放大器,其中該偏壓補償電路與該輸出級電路係相互耦接於兩節點而互為並聯,該控制電路係控制該偏壓補償電路改變該兩節點之電壓位準,以調整該增益偏壓。The operational amplifier of claim 1, wherein the bias compensation circuit and the output stage circuit are coupled to each other at two nodes and are connected in parallel, and the control circuit controls the bias compensation circuit to change the voltage levels of the two nodes. Quasi to adjust the gain bias. 如請求項1所述之運算放大器,其中該輸入訊號係為差動輸入訊號。The operational amplifier of claim 1, wherein the input signal is a differential input signal.
TW108206636U 2019-05-24 2019-05-24 Operational Amplifier TWM583173U (en)

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