TWM582256U - Fast switching optical-path architecture for cutting low dielectric material (low-K) wafers - Google Patents

Abstract

The present invention relates to a fast switching optical-path architecture for cutting low dielectric material (low-K) wafers, comprising a laser beam generating device for generating a laser beam, a spectroscope device located behind the laser beam generating device to perform splitting or non-splitting of light, a beam converting device located behind the spectroscope device that is composed of a plurality of beam control cartridges and is used to adjust the optical-path of the laser beam, and a central control device that is electrically connected to the laser beam generating device, the spectroscope device, and the beam converting device. The present invention enables a single laser processing machine to use a plurality of different optical-paths for cutting by switching among different beam control cartridges.

Description

Fast switching optical path architecture for cutting low dielectric material (Low-K) wafers

This creation is about a fast switching optical path architecture; more specifically, it relates to a fast switching optical path architecture for cutting low dielectric material (Low-K) wafers.

The semiconductor wafer is cut by dividing a predetermined line on the surface of the wafer into a plurality of lattice-shaped regions, and forming an integrated circuit in the divided region, and then cutting the semiconductor wafer along the dividing line. The semiconductor devices are obtained one by one, and the current common cutting methods can be divided into blade cutting and laser cutting. However, if cutting low dielectric material (Low-K) wafers, cutting with a blade will be used. Destroying the integrity of the wafer can therefore only be done using laser cutting.

However, the problem with laser cutting is that the existing laser processing machine has only one fixed optical path and processing method. Therefore, when it comes to special line width cutting requirements, it is necessary to use different processing machines and replace them. The processing machine will not only greatly increase the cost of processing, but also all kinds of laser processing machines will occupy a lot of space.

Therefore, if two or more laser processing machines can be integrated into a single device, and the optical path and processing method can be switched according to requirements, the processing cost can be reduced and the space problem of the machine setting can be solved.

In view of this, the applicant of this case has been engaged in research and development experience in related fields for many years, and has conducted in-depth discussions on the above-mentioned shortcomings, and actively sought solutions according to the above-mentioned needs. After a long period of hard work and many tests, the applicant finally completed this book. creation.

The main purpose of this creation is to simultaneously align multiple laser paths into the same laser processing machine.

For the above purposes, the present invention is directed to a fast switching optical path architecture for cutting low dielectric material (Low-K) wafers, including a laser beam generating device, a beam splitting device, a beam converting device, and a central control device.

The laser beam generating device is used to produce a laser beam that cuts a low dielectric material (Low-K) wafer.

The beam splitting device is configured to receive a laser beam emitted by the laser beam generating device, the beam splitting device comprising a wavelength plate, a beam splitter, a first mirror, a second mirror, and a collecting mirror;

Wherein the wavelength plate is located behind the laser beam generating device;

Wherein the beam splitter is located behind the wavelength plate, and divides the laser beam into two different angles and does not overlap the first beam splitting beam and the second beam splitting beam;

The first mirror is located behind the beam splitter and is used for reflecting the first beam splitter, and the first mirror is provided with a displacement device;

Wherein the second mirror is located behind the beam splitter and is used for reflecting the second beam splitting beam;

Wherein, the condensing mirror is located on a path of the first splitting beam and the second beam splitting beam reflected by the first mirror and the second mirror, and the first splitting beam and the second beam splitting beam are in the same direction, and the first The parallel distance between the split beam and the second split beam is controlled by the displacement device moving the first mirror.

The beam converting device is located behind the beam splitting device and is configured to receive the first beam splitting beam and the second beam splitting beam processed by the condensing mirror, wherein the beam converting device is composed of two or more beam control devices, and each A diffractive element is disposed in the beam control unit, and a moving device for switching the beam control unit is disposed on the beam converting device, and different beam control units are switched through the moving device to generate two or more types of laser light. road.

The central control device is electrically coupled to the laser beam generating device, the wave plate, the first mirror, and the beam converting device, respectively.

The advantages of this fast switching optical path architecture for cutting low dielectric material (Low-K) wafers are:  1. The user can switch between different beam control options through the central control unit, so that a single laser machine can be processed using a variety of different laser light paths.  2. The displacement device on the first mirror can adjust its position arbitrarily and change the distance between the first beam splitting beam and the second beam splitting beam by adjusting the position of the first mirror.  

The purpose, function, features and structure of the present invention can be understood in a more detailed manner, and the preferred embodiment will be described in conjunction with the drawings.

First, please refer to FIG. 1, which is a schematic diagram of the creation structure.

The present invention is directed to a fast switching optical path architecture 1 for cutting low dielectric material (Low-K) wafers, comprising a laser beam generating device 11 and a spectroscopic device  12. Beam conversion device 13 and central control device 14.  

The laser beam generating device 11 is used to produce a laser beam that cuts a low dielectric material (Low-K) wafer 2 having a wavelength of 355 nm.

The spectroscopic device 12 is configured to receive a laser beam generating device  11 emitted laser beam, the spectroscopic device 12 includes a wave plate 121, a beam splitter 122, a first mirror 123, a second mirror 124, and a concentrating mirror 125;  

The wavelength plate 121 is located behind the laser beam generating device 11, and the wavelength plate 121 is adopted. The λ wavelength plate 121 is optimal;

The beam splitter 122 is located behind the wave plate 121, and divides the laser beam into two different angles and does not overlap the first split beam and the second split beam, and the energy of the first split beam and the second split beam The ratio is controlled by adjusting the wavelength plate 121;

The first mirror 123 is located behind the beam splitter 122 and is used to reflect the first beam splitter. The first mirror 123 is provided with a displacement device 1231, and the displacement device 1231 is used to adjust the first mirror.  123 location;  

The second mirror 124 is located behind the beam splitter 122 and is used to reflect the second beam splitter;

The condensing mirror 125 is located on the path of the first beam splitting beam and the second beam splitting beam reflected by the first mirror 123 and the second mirror 124, and the reflected first beam splitting beam and the second split beam collating beam are identical. Direction, and the parallel distance between the first split beam and the second split beam is by the displacement device  The 1231 moves the first mirror 123 to control.  

The beam converting device 13 is located behind the beam splitting device 12 and is configured to receive the first splitting beam and the second beam splitting beam processed by the collecting mirror 125, the beam converting device 13 being controlled by two or more beams.  131 is composed, and each of the beam control 匣 131 is provided with an arbitrarily replaceable diffractive element 1311 for forming a first split beam and a second split beam into a flat top or a plurality of focus points, The beam converting device 13 is provided with a moving device 132 capable of moving the beam control unit 131, and is switched by the moving device 132 to use different beam control units 131 to produce two or more types of laser light paths.  

The central control device 14 is respectively associated with a laser beam generating device  11. The wavelength plate 121, the displacement device 1231, and the beam conversion device 13 are electrically connected.  

In addition, in order to more precisely control the laser beam of the low dielectric material (Low-K) wafer 2, the laser beam generating device 11 and the spectroscopic device can be used.  A power control device electrically connected to the central control unit 14 is installed between 12  15. Let the laser beam pass through the power control device 15 and adjust its energy through the central control unit 14 before entering the beam splitting device 12, thereby averaging the energy of the laser beam for cutting.  

The details of the implementation of this creation and related reference drawings are as follows:

Before the cutting of the low dielectric material (Low-K) wafer 2, the creation first selects the type of the cut light path through the central control device 14 (as shown in FIG. 2, FIG. 3 or FIG. 4), and then transmits the mobile device. 132, after the beam control 匣 131 capable of outputting the corresponding optical path is moved to the position, then the laser beam generating device 11 is turned on and the laser beam is incident on the power control device 15, and the energy is adjusted by the central control device 14 before entering. The spectroscopic device 12 is connected to the laser beam by the spectroscopic device 12 to split or not split the light beam into the beam control unit 131. When the laser beam enters the beam control unit 131, the internal diffractive element 1311 The laser beam is converted into a predetermined optical path, and finally the optical path is passed through the concentrating element 16 and struck on the surface of the low dielectric material (Low-K) wafer 2 for cutting.

In addition, it should be specially noted that if the optical path shown in FIG. 2 is used for cutting, the laser beam is first adjusted to enter the beam splitter 122, and the energy of the laser beam is totally reflected to the second mirror 124. And if the optical path shown in FIG. 3 is to be used for cutting, the spacing between the two laser beams can be set in advance by adjusting the displacement device 1231, and then the first beam splitting beam and the second beam splitting beam are distributed by the wavelength plate 121. The energy ratio is further divided into a first beam splitting beam and a second beam splitting beam by the beam splitter 122, and the energy distribution ratio is between 1% and 99%: 99% to 1%, and FIG. 2 3 and the type of optical path shown in FIG. 4 are only used as an auxiliary reference, and are not intended to limit the type of optical path of the present creation.

In summary, the main features of this fast switching optical path architecture for cutting low dielectric material (Low-K) wafers are:  1. The user can switch between different beam control options through the central control unit, so that a single laser machine can be processed using a variety of different laser light paths.  2. The displacement device on the first mirror can adjust its position arbitrarily and change the distance between the first beam splitting beam and the second beam splitting beam by adjusting the position of the first mirror.  

Therefore, this creation has excellent progress and practicality in similar products. At the same time, after checking the technical literature on such structures at home and abroad, it has not been found that the same or similar structure exists before the application of this case, so this case It should meet the patent requirements of "creative", "combined with industrial use" and "progressive", and apply in accordance with the law.

It is to be understood that the above-mentioned preferred embodiments of the present invention are intended to be included in the scope of the present invention.

1‧‧‧Fast switching optical path architecture for cutting low dielectric material (Low-K) wafers  11‧‧‧Laser beam generating device  12‧‧‧ Spectroscopic device  121‧‧‧wavelength board  122‧‧‧beam splitter  123‧‧‧First mirror  1231‧‧‧displacement device  124‧‧‧Second mirror  125‧‧‧Condenser  13‧‧‧beam conversion device  131‧‧‧ Beam Control匣  1311‧‧‧Diffractive components  132‧‧‧Mobile devices  14‧‧‧Central control unit  15‧‧‧Power control unit  16‧‧‧ Concentrating elements  2‧‧‧Low dielectric material (Low-K) wafer  

Figure 1: Schematic diagram of this creative architecture;  Figure 2: Schematic diagram of the laser cutting of this creation (1);  Figure 3: Schematic diagram of the laser cutting of this creation (2);  Figure 4: Schematic diagram of the laser cutting of this creation (3).  

Claims (6)

A fast switching optical path architecture for cutting low dielectric material (Low-K) wafers, comprising a laser beam generating device, a beam splitting device, a beam converting device and a central control device;  The laser beam generating device is configured to produce a laser beam that cuts a low dielectric material (Low-K) wafer;  The beam splitting device is configured to receive a laser beam emitted by the laser beam generating device, the beam splitting device comprising a wavelength plate, a beam splitter, a first mirror, a second mirror, and a collecting mirror;  Wherein the wavelength plate is located behind the laser beam generating device;  Wherein the beam splitter is located behind the wavelength plate, and divides the laser beam into two different angles and does not overlap the first beam splitting beam and the second beam splitting beam;  The first mirror is located behind the beam splitter and is used for reflecting the first beam splitter, and the first mirror is provided with a displacement device;  Wherein the second mirror is located behind the beam splitter and is used for reflecting the second beam splitting beam;  Wherein, the condensing mirror is located on a path of the first splitting beam and the second beam splitting beam reflected by the first mirror and the second mirror, and the first splitting beam and the second beam splitting beam are in the same direction, and the first The parallel distance between the splitting beam and the second beam splitting beam is controlled by the displacement device moving the first mirror;  The beam converting device is located behind the beam splitting device and is configured to receive the first beam splitting beam and the second beam splitting beam processed by the condensing mirror, wherein the beam converting device is composed of two or more beam control devices, and each A diffractive element is disposed in the beam control unit, and a moving device for switching the beam control unit is disposed on the beam converting device, and different beam control units are switched through the moving device to generate two or more types of laser light. road;  The central control device is electrically coupled to the laser beam generating device, the wave plate, the first mirror, and the beam converting device, respectively.   The fast switching optical path architecture for cutting a low dielectric value material (Low-K) wafer according to claim 1, wherein the laser beam emitted by the laser beam generating device has a wavelength of 355 nm. The fast switching optical path architecture for cutting a low dielectric value material (Low-K) wafer according to claim 1, wherein a power control device is disposed between the laser beam generating device and the spectroscopic device. The fast switching optical path architecture for cutting a low dielectric value material (Low-K) wafer according to claim 3, wherein the power control device is electrically connected to the central control device. A fast switching optical path architecture for cutting a low dielectric material (Low-K) wafer, as described in claim 1, wherein the diffractive element in the beam control crucible is replaceable. The fast switching optical path architecture for cutting a low dielectric material (Low-K) wafer according to claim 1, wherein the diffraction element is used to shape the first beam splitting beam and the second beam splitting beam Flat top or multiple focus points.