CN210060109U - Fast switching optical path structure for cutting low dielectric value material wafer - Google Patents
Fast switching optical path structure for cutting low dielectric value material wafer Download PDFInfo
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- CN210060109U CN210060109U CN201920683840.0U CN201920683840U CN210060109U CN 210060109 U CN210060109 U CN 210060109U CN 201920683840 U CN201920683840 U CN 201920683840U CN 210060109 U CN210060109 U CN 210060109U
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Abstract
The utility model discloses a fast switch-over light path framework for cutting low dielectric value material wafer, include the laser beam generating device who is used for the output laser beam, be located and be used for carrying out the beam splitting or not beam splitting's beam splitting device with the laser beam after the laser beam generating device, be located and constitute by a plurality of beam control casket and be used for adjusting the beam conversion device in laser beam light path behind the beam splitting device to and the central control unit who links with laser beam generating device, beam splitting device and beam conversion device electrical property. The utility model discloses a switch and use different beam control casket to make single laser beam machining machine can use the light path of multiple difference to cut to reach the beneficial effect that reduces the processing cost and solve the space problem of board setting.
Description
Technical Field
The present invention relates to a fast switching optical path structure, and more particularly, to a fast switching optical path structure for cutting low-k material wafers.
Background
The cutting of a semiconductor wafer is to provide a predetermined dividing line on the surface of the wafer to divide the wafer into a plurality of grid-shaped regions, form integrated circuits in the divided regions, and cut the semiconductor wafer along the predetermined dividing line to obtain individual semiconductor devices.
However, the problem of using laser cutting is that the existing laser processing machine has only one fixed optical path and processing method, so once a special line width cutting requirement is met, different processing machines must be used, and the replacement of the processing machines not only greatly increases the processing cost, but also occupies a lot of space.
Therefore, two or more laser processing machines can be integrated into an independent device, and the light path and the processing method can be switched according to requirements, so that the processing cost can be reduced, and the space problem of machine setting can be solved.
In view of the above, the applicant of the present invention has conducted extensive research and development based on the research and development experience of the applicant in the related field for many years, and actively seeks a solution to the above-mentioned deficiency, and finally completes the present invention through long-term research and many tests.
SUMMERY OF THE UTILITY MODEL
To the technical problem, the utility model discloses a main aim at is whole and in same laser beam machining built-in with multiple laser light path simultaneously.
To achieve the above objective, the present invention provides a fast switching optical path structure for cutting a low-k material wafer, which comprises a laser beam generating device, a beam splitting device, a beam converting device and a central control device.
The laser beam generating device is used for generating laser beams for cutting the low dielectric value material wafer.
The beam splitting device is used for receiving the laser beam emitted by the laser beam generating device and comprises a wavelength plate, a beam splitter, a first reflective mirror, a second reflective mirror and a collecting mirror;
wherein the wavelength plate is positioned behind the laser beam generating device;
the beam splitter is positioned behind the wavelength plate and divides the laser beam into a first split beam and a second split beam which have different angles and are not overlapped;
the first reflector is positioned behind the spectroscope and used for reflecting the first split light beam, and a displacement device is arranged on the first reflector;
the second reflecting mirror is positioned behind the beam splitter and used for reflecting the second split light beam;
the condenser lens is positioned on the paths of the first split light beam and the second split light beam reflected by the first reflector and the second reflector, the first split light beam and the second split light beam are integrated into the same direction, and the parallel distance between the first split light beam and the second split light beam is controlled by moving the first reflector through the displacement device.
The beam conversion device is arranged behind the beam splitting device and used for receiving the first split beam and the second split beam processed by the condenser lens, the beam conversion device consists of two or more beam control boxes, each beam control box is internally provided with a diffraction assembly, the beam conversion device is provided with a moving device used for switching the beam control boxes, and the moving device is used for switching different beam control boxes to generate two or more laser paths.
The central control device is electrically connected with the laser beam generating device, the wavelength plate, the first reflector and the light beam conversion device respectively.
The utility model discloses a fast switch over light path framework advantage for cutting low dielectric value material wafer lies in:
1. the user can use different beam control boxes through the central control device in an optional switching way, so that a single laser machine can use various different laser light paths for processing;
2. the displacement device on the first reflector can randomly adjust the position of the first reflector, and the distance between the first split light beam and the second split light beam is changed by adjusting the position of the first reflector.
Drawings
FIG. 1 is a schematic structural view of the present invention;
fig. 2 is a schematic diagram (one) of the laser cutting of the present invention;
fig. 3 is a schematic diagram (two) of the laser cutting of the present invention;
fig. 4 is a schematic diagram (iii) of the laser cutting of the present invention.
Symbolic illustration in the drawings:
1 a fast switching optical path structure for cutting low dielectric value material wafers;
11 laser beam generating means;
12 a light splitting device; a 121 wavelength plate; 122 a beam splitter; 123 a first mirror; 1231 a displacement device; 124 a second mirror; 125 a condenser lens;
13 a beam converting means; 131 a beam control box; 1311 a diffractive element; 132 moving the device;
14 a central control device;
15 a power control device;
16 a light-gathering component;
2 low k material wafer.
Detailed Description
For a more complete understanding of the objects, functions, features and structure of the invention, reference should be made to the following detailed description of the preferred embodiment taken in conjunction with the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram of the present invention.
The invention relates to a fast switching optical path structure 1 for cutting low dielectric value material wafers, which comprises a laser beam generating device 11, a light splitting device 12, a light beam conversion device 13 and a central control device 14.
The laser beam generating device 11 is used for generating a laser beam for cutting the low dielectric material wafer 2, and the wavelength of the laser beam is 355 nm.
The beam splitting device 12 is used for receiving the laser beam emitted by the laser beam generating device 11, and the beam splitting device 12 includes a wavelength plate 121, a beam splitter 122, a first reflective mirror 123, a second reflective mirror 124, and a condenser 125;
wherein the wavelength plate 121 is located behind the laser beam generating device 11, and the wavelength plate 121 is preferably 1/2 λ wavelength plate 121;
the beam splitter 122 is located behind the wavelength plate 121 and splits the laser beam into two non-overlapping first and second split beams with different angles, and the energy ratio of the first and second split beams is controlled by adjusting the wavelength plate 121;
the first reflective mirror 123 is located behind the beam splitter 122 and is configured to reflect the first split light beam, a displacement device 1231 is disposed on the first reflective mirror 123, and the displacement device 1231 is configured to adjust the position of the first reflective mirror 123;
the second reflective mirror 124 is located behind the beam splitter 122 and is used for reflecting the second split light beam;
the condenser 125 is located on the path of the first split light beam and the second split light beam reflected by the first reflector 123 and the second reflector 124, and collimates the reflected first split light beam and the reflected second split light beam into the same direction, and the parallel distance between the first split light beam and the second split light beam is controlled by moving the first reflector 123 by the displacement device 1231.
The beam conversion device 13 is located behind the beam splitting device 12 and is configured to receive the first split beam and the second split beam processed by the condenser lens 125, the beam conversion device 13 is composed of two or more beam control boxes 131, each beam control box 131 is provided with a diffractive element 1311 capable of being replaced at will, the diffractive element 1311 is configured to shape the first split beam and the second split beam into a flat top or multiple focus points, the beam conversion device 13 is provided with a moving device 132 capable of moving the beam control boxes 131, and the moving device 132 is used to switch different beam control boxes 131 to generate two or more laser paths.
The central control device 14 is electrically connected to the laser beam generating device 11, the wavelength plate 121, the displacement device 1231 and the beam converting device 13, respectively.
In addition, in order to control the laser beam for cutting the low-k material wafer 2 more precisely, a power control device 15 electrically connected to the central control device 14 may be added between the laser beam generating device 11 and the beam splitting device 12, so that the laser beam passes through the power control device 15 and enters the beam splitting device 12 after the energy of the laser beam is adjusted by the central control device 14, thereby making the energy of the laser beam for cutting more uniform.
The following detailed description of embodiments of the present invention and related references can be made to the drawings in which:
the utility model discloses before cutting low dielectric value material wafer 2, can select the light path kind of cutting (as shown in fig. 2, fig. 3 or fig. 4) through central control device 14 earlier, rethread mobile device 132 will produce the light beam control casket 131 of corresponding light path and move to the back of fixing a position, open laser beam generating device 11 and make the laser beam jet into power control device 15 after, and reentrant spectroscopic device 12 after adjusting its energy through central control device 14, continuous by the laser beam that spectroscopic device 12 will jet into carry out beam splitting or not beam splitting handle back and then jet into light beam control casket 131, after laser beam gets into light beam control casket 131, its inside diffraction subassembly 1311 can change the laser beam into preset light path, make the light path pass through low dielectric spotlight subassembly 16 and beat and cut on low dielectric value material wafer 2 surfaces at last.
In addition, it should be particularly noted that if the optical path shown in fig. 2 is used for cutting, the laser beam enters the beam splitter 122 by adjusting the wavelength plate 121, and then the energy of the laser beam is totally reflected to the second reflective mirror 124; if the optical path shown in fig. 3 is to be used for cutting, the distance between the two laser beams can be set in advance by adjusting the displacement device 1231, then the energy ratio of the first split beam and the second split beam is distributed by the wavelength plate 121, and then the laser beam is split into the first split beam and the second split beam by the beam splitter 122, and the energy distribution ratio is 1% to 99%: 99% -1%, the types of the optical paths shown in fig. 2, 3 and 4 are only used as auxiliary references and are not intended to limit the types of the optical paths of the present invention.
In summary, the utility model discloses a fast switch over light path framework key feature for cutting low dielectric value material wafer lies in:
the user can use different light beam control boxes through the central control device, so that a single laser machine can use various different laser light paths for processing.
The displacement device on the first reflector can randomly adjust the position of the first reflector, and the distance between the first split light beam and the second split light beam is changed by adjusting the position of the first reflector.
The above description is only for the preferred embodiment of the present invention, and all the changes of the equivalent structure made by applying the present specification and the claims should be construed as being included in the claims of the present invention.
Claims (6)
1. A fast switching optical path structure for cutting low dielectric value material wafer is characterized in that the structure comprises a laser beam generating device, a light splitting device, a light beam conversion device and a central control device;
the laser beam generating device is used for generating laser beams for cutting the low dielectric value material wafer;
the beam splitting device is used for receiving the laser beam emitted by the laser beam generating device and comprises a wavelength plate, a beam splitter, a first reflective mirror, a second reflective mirror and a collecting mirror;
wherein the wavelength plate is positioned behind the laser beam generating device;
the beam splitter is positioned behind the wavelength plate and divides the laser beam into a first split beam and a second split beam which have different angles and are not overlapped;
the first reflector is positioned behind the spectroscope and used for reflecting the first split light beam, and a displacement device is arranged on the first reflector;
the second reflecting mirror is positioned behind the beam splitter and used for reflecting the second split light beam;
the condenser lens is positioned on the paths of the first split light beam and the second split light beam reflected by the first reflector and the second reflector, the first split light beam and the second split light beam are integrated into the same direction, and the parallel distance between the first split light beam and the second split light beam is controlled by moving the first reflector by the displacement device;
the beam conversion device is positioned behind the beam splitting device and used for receiving the first split beam and the second split beam processed by the condenser lens, the beam conversion device consists of two or more beam control boxes, each beam control box is internally provided with a diffraction assembly, the beam conversion device is provided with a moving device used for switching the beam control boxes, and the moving device is used for switching different beam control boxes to generate two or more laser paths;
the central control device is electrically connected with the laser beam generating device, the wavelength plate, the first reflector and the light beam conversion device respectively.
2. The structure of claim 1, wherein the laser beam generating device emits a laser beam with a wavelength of 355 nm.
3. The structure of claim 1, wherein a power control device is disposed between the laser beam generating device and the beam splitting device.
4. The structure of claim 3, wherein the power control device is electrically connected to the central control device.
5. The architecture of claim 1, wherein the diffractive element in the beam control box is replaceable.
6. The structure of claim 1, wherein the diffractive element is configured to shape the first split beam and the second split beam into a flat top or multiple focal points.
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| CN201920683840.0U CN210060109U (en) | 2019-05-14 | 2019-05-14 | Fast switching optical path structure for cutting low dielectric value material wafer |
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| CN201920683840.0U CN210060109U (en) | 2019-05-14 | 2019-05-14 | Fast switching optical path structure for cutting low dielectric value material wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111940892A (en) * | 2019-05-14 | 2020-11-17 | 雷科股份有限公司 | Fast switching optical path structure for cutting low dielectric value material wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111940892A (en) * | 2019-05-14 | 2020-11-17 | 雷科股份有限公司 | Fast switching optical path structure for cutting low dielectric value material wafer |
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