TWM571455U - Light-emitting diode flat panel light - Google Patents

Abstract

The present invention provides an adjustable light-emitting diode projection lamp for a semiconductor yellow light process, the light-emitting diode flat panel lamp comprising: a casing, a bottom plate and sidewalls formed on sides of the bottom plate The sidewall defines an opening around the bottom plate; a light emitting diode light source is disposed on the bottom plate of the housing, and the light emitting diode light source generates an illumination light to pass through the shell The opening of the body; and a filter plate disposed on the housing and covering the opening for receiving the illumination light and filtering out light having a wavelength of less than 520 nm in the illumination light, wherein the filter The divided illumination light is emitted from the filter plate for the semiconductor yellow light process.

Description

Light-emitting diode flat panel light

This creation is about a luminaire, especially a light-emitting diode flat panel luminaire.

Since the semiconductor industry needs to use short-wavelength light for photolithography etching, the lithography process has a specific wavelength of light at the exposure step used in the clean room. In order to prevent the exposure step from being affected by external light, the lighting fixture used in the clean room must not contain the light of the specific wavelength, so as to prevent the photoresist from being pre-exposed without lithography, resulting in the scrapping of the entire wafer. Because the light produced by the illuminator is roughly yellow, the process is often referred to as a yellow lithography process.

The yellow light illumination of the existing yellow light lithography process uses a fluorescent tube with a yellow light, which is coated with a yellow light film to cover the entire white fluorescent tube, and uses a yellow light film to remove light of a specific wavelength (for example, 500 nm). To meet the lighting needs. However, the fluorescent performance of the fluorescent tube is low, and the light efficiency is lower when the blue light emitted by the white fluorescent tube is removed by the yellow light film. In addition, white fluorescent tubes have a reduced service life and must be replaced from time to time, requiring more time and cost.

Therefore, it is necessary to develop a new type of light-emitting diode lamp to solve the above problem. question.

The purpose of the present invention is to provide a light-emitting diode flat panel lamp, which comprises a light-emitting diode light source and a filter plate to form an illumination light having a predetermined wavelength range for use in a yellow light process of the semiconductor to improve the light fixture. Illumination efficiency, reduced power consumption, and longevity.

In order to achieve the above object, a light-emitting diode flat panel lamp according to an embodiment of the present invention is used for a semiconductor yellow light process, and the light-emitting diode flat panel lamp comprises: a casing, a bottom plate and a side of the bottom plate a sidewall formed on the bottom plate to form an opening; a light emitting diode light source disposed on the bottom plate of the housing, the light emitting diode light source generating an illumination light to pass through The opening of the housing; and a filter plate disposed on the housing and covering the opening for receiving the illumination light and filtering out light having a wavelength of less than 520 nm in the illumination light And filtering the irradiated light from the filter plate for use in the semiconductor yellow light process.

In one embodiment, the wavelength of the illumination light of the light emitting diode source is greater than 500 nanometers.

In an embodiment, the light emitting diode light source is a yellow light emitting diode, and the light emitting diode light source does not have a blue light spectrum.

In an embodiment, the light emitting diode light source is a white light emitting diode.

In one embodiment, the light emitting diode light source is a white light emitting diode of any color temperature.

In an embodiment, the light emitting diode light source is a plurality of light emitting diode lamps The strip is fixed to the bottom plate in a row.

In one embodiment, the light-emitting diode flat panel lamp further includes a reflective sheet fixed on the housing and surrounding the light-emitting diode light source for reflecting the illumination light. The reflected light is passed through the opening.

In one embodiment, the light-emitting diode flat panel lamp further includes a plurality of beadings fixed on the casing and pressing the light-emitting diode light source and the reflective sheet on the bottom plate.

In one embodiment, the light-emitting diode flat panel lamp further includes a diffusion plate disposed on one side of the filter plate to diffuse the illumination light emitted from the filter plate, so that The illumination light is homogenized.

In one embodiment, the LED array lamp further includes a frame fixed to the housing for covering the LED unit and the filter plate.

The LED light-emitting diode lamp of the present invention uses a light-emitting diode light source and a filter plate to form an illumination light having a predetermined wavelength range for use in a yellow light process of the semiconductor to improve the illumination efficiency of the lamp and reduce Power consumption, and lifetime.

100‧‧‧Lighting diode plate lamps

102‧‧‧ housing

103‧‧‧Lighting diode light bar

104‧‧‧Lighting diode source

105‧‧‧Lighting diode

106‧‧‧reflector

107‧‧‧Opening

108‧‧‧Multiple beading

110‧‧‧Filter plate

112‧‧‧Diffuser board

114‧‧‧Frame

116‧‧‧floor

117‧‧‧ accommodating space

118‧‧‧ side

120‧‧‧ side wall

122‧‧‧ openings

124‧‧‧Dark environment

200‧‧‧Dust lamp housing

L‧‧‧ Illumination

SP1~SP4‧‧‧Spectrum

In order to more clearly illustrate the technical solutions in the present embodiment, the drawings used in the description of the embodiments will be briefly described below:

1 is an exploded view of a light-emitting diode flat panel lamp according to a first embodiment of the present invention.

FIG. 2 is a schematic perspective view of a light-emitting diode flat panel lamp according to the present embodiment.

3 is a diagram showing the illumination light of the light-emitting diode light source according to the first embodiment of the present invention. A schematic diagram of the spectrum with a wavelength greater than 500 nm.

FIG. 4 is a schematic diagram showing the spectrum of the wavelength of less than 520 nm in the illumination light filtered by the filter plate according to the present invention.

FIG. 5 is a schematic diagram showing the spectrum of a light-emitting diode light source in accordance with a second embodiment of the present invention as a white light-emitting diode.

FIG. 6 is a schematic diagram showing the spectrum of the wavelength of less than 520 nm in the illumination light filtered by the filter plate according to the present invention.

FIG. 7 is a schematic view showing a photo of a light-emitting diode flat panel lamp according to the present embodiment.

FIG. 8 is a schematic view showing a dustproof lamp housing for mounting a light-emitting diode flat panel lamp according to the present embodiment.

Referring to the drawings, wherein like reference numerals refer to the same or the The following description is based on the illustrated embodiments of the present invention and should not be considered as limiting the other specific embodiments of the present invention that are not described herein.

1 is an exploded view of a light-emitting diode flat panel lamp 100 in accordance with a first embodiment of the present invention. FIG. 2 is a schematic perspective view of a light-emitting diode flat panel lamp 100 according to the present embodiment. The LED device 100 is used in a semiconductor yellow light process, and includes a housing 102, a light emitting diode light source 104, a reflective sheet 106, a plurality of bead strips 108, a filter plate 110, a diffuser plate 112, and a frame 114.

As shown in FIG. 1 and FIG. 2, the housing 102 is provided with a bottom plate 116 and a receiving space. 117 and a sidewall 120 formed on a side 118 of the bottom plate 116, the sidewall 120 forming an opening 122 around the bottom plate 116. The light emitting diode light source 104 is disposed in the accommodating space 117 of the housing 102 and is fixed on the bottom plate 116 for generating an illuminating light L to pass through the housing 102. Opening 122. The filter plate 110 is disposed on the housing 102 and covers the opening 122 for receiving the illumination light L and filtering out light having a wavelength of less than 520 nm or filtering in the illumination light L. One of the light rays having a wavelength of less than 500 nm in the illumination light, wherein the filtered illumination light L is emitted from the filter plate 110 for use in the semiconductor yellow light process to have a wavelength greater than The illumination light L of 520 nm produces an illumination effect, and because light having a wavelength of less than 520 nm is filtered out, it does not adversely affect the yellow light process. In an embodiment, the filter plate 110 is, for example, a filter or a filter film.

In the embodiment shown in FIG. 1 , the light emitting diode light source 104 is a plurality of light emitting diode light strips 103 , and each of the light emitting diode light strips 103 includes a plurality of light emitting diodes 105 in a stripe manner. Fixed to the bottom plate 116, each of the light emitting diodes 105 is exposed from the opening 107 of the reflective sheet 106. The light-emitting diode flat panel lamp 100 further includes a reflective sheet 106 fixed on the housing 102 and surrounding the periphery of the light-emitting diode light source 104 for reflecting the illumination light L. The reflected light passes through the opening 122. The light-emitting diode flat panel lamp 100 further includes a plurality of strips 108 fixed on the casing 102 and pressing the light-emitting diode light source 104 and the reflective sheet 106 on the bottom plate 116. The bead 108 is fixed to the bottom plate 116 by screws, riveting, or fastening, for example.

In the embodiment shown in FIG. 1 , the light-emitting diode flat panel lamp 100 further includes a diffusion plate 112 disposed on one side of the filter plate 110 to diffuse the light exiting from the filter plate 110 . The irradiation light L is described to make the irradiation light L uniform. In the embodiment shown in Figure 1, The LED device 100 further includes a frame 114 fixed to the housing 102 for covering the LED source 104 and the filter panel 110. The frame 114 is fixed to the housing 102, for example, by screws, riveting, or fastening.

Referring to FIG. 3, a schematic diagram of a spectrum of the illumination light L of the light-emitting diode source 104 according to the first embodiment of the present invention having a wavelength greater than 500 nm is illustrated. As shown in FIG. 3, the horizontal axis is the wavelength (nano, nm), the vertical axis is the intensity (Watt/nm, Watts/nm), and the spectrum SP1 indicates that the illumination light L of the light-emitting diode source 104 is at a different wavelength (for example, Corresponding light intensity between 380 nm and 780 nm. As shown in FIG. 3, in an embodiment, the wavelength of the illumination light L of the light-emitting diode source 104 is greater than 500 nm, for example, between 500 and 780 nm. In another embodiment, the light emitting diode light source 104 is a yellow light emitting diode, and the light emitting diode light source 104 does not have a blue light spectrum (for example, the illumination light L does not have a wavelength less than 500 nanometers. The light of the meter). When the light emitting diode light source 104 does not have a blue light spectrum, it can replace the white light fluorescent tube of the prior art. Since the yellow light emitting diode includes only light having a wavelength greater than 500 nm, the yellow light emitting diode can still emit yellow light when the filter plate 110 is aged or faded. The light of the process is high, and since it is not necessary to filter out the blue light, the light of the illumination light L is high. In another embodiment, the light-emitting diode flat panel lamp 100 can omit the filter plate 110 according to the requirements of the yellow light process, and the light-emitting diode light source 104 does not have a blue light spectrum to provide sufficient illumination.

Referring to FIG. 1 and FIG. 3, FIG. 4 is a schematic diagram showing the spectrum of the illumination light L having a wavelength of less than 520 nm filtered by the filter plate 110 according to the present invention. As shown in FIG. 4, the horizontal axis is the wavelength (nano, nm), the vertical axis is the intensity (Watt/nm, Watts/nm), and the spectrum SP2 indicates that the illumination light L of the light-emitting diode source 104 is at a different wavelength (for example, Corresponding light intensity between 380 nm and 780 nm degree. As shown in FIG. 4, in an embodiment, the filter plate 110 filters out light having a wavelength of less than 520 nm from the illumination light L from the light-emitting diode source 104, leaving light having a wavelength greater than 520 nm. In an embodiment, the filter plate 110 is used to filter out unnecessary light in the yellow light process, for example, filtering out blue light and ultraviolet light, so that the emitted light L does not affect the yellow light process.

Referring to FIG. 5-6, FIG. 5 is a schematic diagram showing the spectrum of the light-emitting diode light source 104 as a white light-emitting diode according to the second embodiment of the present invention. FIG. 6 is a schematic diagram showing the spectrum of the wavelength of less than 520 nm in the illumination light filtered by the filter plate according to the present invention. As shown in FIG. 5, the horizontal axis is the wavelength (nano, nm), the vertical axis is the intensity (Watt/nm, Watts/nm), and the spectrum SP3 indicates that the illumination light L of the light-emitting diode source 104 is at a different wavelength (for example, Corresponding light intensity between 380 nm and 780 nm. As shown in FIG. 5, in an embodiment, the wavelength of the illumination light L of the LED source 104 is between 380 and 780 nm. The light-emitting diode light source 104 is, for example, a white light-emitting diode, and the light-emitting diode light source 104 is, for example, a white light-emitting diode of any color temperature, for example, a color temperature of 5700K or 5400K, but is not limited thereto.

Referring to FIG. 1 and FIG. 5-6, as shown in FIG. 6, the horizontal axis is the wavelength (nano, nm), the vertical axis is the intensity (Watt/nm, Watts/nm), and the spectrum SP4 is the light-emitting diode light source 104. The illumination light L corresponds to a light intensity at a different wavelength (for example, between 380 nm and 780 nm). As shown in FIG. 6, in an embodiment, the filter plate 110 filters out light having a wavelength between 0 nm and 520 nm in the illumination light L from the light-emitting diode source 104, leaving a wavelength greater than 520. The light of the nano. In an embodiment, the filter plate 110 is configured to filter out unwanted light in the yellow light process (for example, light having a wavelength between 0 nm and 520 nm in the illumination light L is filtered out), for example, filtering out blue light, The ultraviolet light causes the emitted illuminating light L to not affect the progress of the yellow light process.

Referring to FIG. 7, a light-emitting diode plate is illuminated according to the present creative embodiment. A photo illustration of the luminaire 100. As shown in FIG. 7, the light-emitting diode flat panel lamp 100 is illuminated in a dark environment 124, and the light-emitting diode flat panel lamp 100 has uniform illumination light L for use in a yellow light process of the semiconductor to improve the illumination of the lamp. Performance, reduced power consumption, and longevity.

With continued reference to FIG. 1, in one embodiment, the LED light source 104 of the LED array 100 of the present invention consumes less power, for example, three T8 tubes (not shown) compared to the prior art. And the power consumption is 120W (watt), the luminous diode light source 104 of the luminous LED panel lamp 100 of the present invention consumes only 38W, and the luminous efficiency reaches 90lm/W (lumens/watt), which can achieve the conventional knowledge. The same luminous flux and illuminance of the technology saves up to 68%, effectively reducing the power consumption of the light-emitting diode flat panel lamp 100. Moreover, the light-emitting diode light source 104 of the light-emitting diode flat panel lamp 100 of the present invention has the characteristics of high life and low light attenuation, and greatly reduces the pollution of the working hours, consumables and dust of the lamp in the clean room, which is beneficial to carry out Semiconductor yellow light process.

Referring to FIGS. 1-2 and FIG. 8, FIG. 8 is a schematic diagram of a dustproof lamp housing 200 for mounting a light-emitting diode flat panel lamp 100 according to the present embodiment. As shown in Fig. 1, the light-emitting diode flat panel lamp 100 of the present invention can be used alone or in combination with the lamp housing used in the old lamp of the existing factory building, as shown in Fig. 8, the embedded in the original clean room. The dustproof lamp housing 200 of the T8 lamp is designed to prevent dust and load. It is a top-mounted design, which is convenient for maintenance personnel to replace the lamp from above. When the internal lamp tube or the like is taken out from above the dust-proof lamp housing 200, the light-emitting diode flat panel lamp 100 of the present invention can be easily placed in the installation space 202 of the dust-proof lamp housing 200 without the need for the original lamp housing. The light-emitting diode flat panel lamp 100 described in the present application is placed in the dust-proof lamp housing 200 to improve the flexibility of use, so as not to contaminate the interior of the clean room.

The LED light-emitting diode lamp of the present invention uses a light-emitting diode light source and a filter plate to form an illumination light having a predetermined wavelength range for use in a yellow light process of a semiconductor In order to improve the lighting efficiency of the luminaire, reduce power consumption, and service life.

Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make various changes without departing from the spirit and scope of the present invention. Retouching, therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached.

Claims (18)

A light-emitting diode flat panel lamp for a semiconductor yellow light process, the light-emitting diode flat-panel lamp comprising: a casing, a bottom plate and side walls formed on sides of the bottom plate, the side walls being on the bottom plate Forming an opening; a light emitting diode light source disposed on the bottom plate of the housing, the light emitting diode light source generating an illumination light to pass through the opening of the housing; and a a filter plate disposed on the housing and covering the opening for receiving the illumination light and filtering out light having a wavelength of less than 520 nm in the illumination light, wherein the filtered illumination light is from The filter plate exits for the semiconductor yellow light process. The illuminating diode flat panel lamp of claim 1, wherein the illuminating light of the illuminating diode source has a wavelength greater than 500 nm. The light-emitting diode flat panel lamp of claim 1, wherein the light-emitting diode light source is a yellow light-emitting diode, and the light-emitting diode light source does not have a blue light spectrum. The illuminating diode flat panel lamp of claim 1, wherein the illuminating diode light source is a white light emitting diode. The light-emitting diode flat panel lamp according to claim 1, wherein the light-emitting diode light source is a white light-emitting diode of any color temperature. The light-emitting diode flat panel lamp of claim 1, wherein the light-emitting diode light source is a plurality of light-emitting diode light strips fixed to the bottom plate in a row. A light-emitting diode flat panel lamp as described in claim 6 of the patent application, further comprising a reflection And a sheet is fixed on the housing and surrounds the periphery of the light emitting diode to reflect the illumination light, so that the reflected light passes through the opening. The illuminating diode flat panel lamp of claim 7, further comprising a plurality of embossing strips fixed on the housing and pressing the illuminating diode light source and the reflective sheet on the bottom plate. The light-emitting diode flat panel lamp of claim 1, further comprising a diffusing plate disposed on one side of the filter plate to diffuse the illumination light emitted from the filter plate, so that The illumination light is homogenized. The light-emitting diode flat panel lamp of claim 1, further comprising a frame fixed to the casing for covering the light-emitting diode light source and the filter plate. A light-emitting diode flat panel lamp for a semiconductor yellow light process, the light-emitting diode flat-panel lamp comprising: a casing, a bottom plate and side walls formed on sides of the bottom plate, the side walls being on the bottom plate Forming an opening; a light emitting diode light source disposed on the bottom plate of the housing, the light emitting diode light source generating an illumination light to pass through the opening of the housing; and a a filter plate disposed on the housing and covering the opening for receiving the illumination light and filtering out light having a wavelength of less than 500 nm in the illumination light, wherein the filtered illumination light is from The filter plate exits for the semiconductor yellow light process. The illuminating diode flat panel lamp of claim 11, wherein the illuminating diode light source is a white light emitting diode. The light-emitting diode flat panel lamp of claim 11, wherein the hair The photodiode light source is a white light emitting diode of any color temperature. The light-emitting diode flat panel lamp of claim 11, wherein the light-emitting diode light source is a plurality of light-emitting diode light strips fixed to the bottom plate in a row. The light-emitting diode flat panel lamp of claim 14, further comprising a reflective sheet fixed on the housing and surrounding the light-emitting diode light source for reflecting the illumination Light, passing the reflected light through the opening. The illuminating diode flat panel lamp of claim 15, further comprising a plurality of embossing strips fixed on the housing and pressing the illuminating diode light source and the reflective sheet on the bottom plate. The light-emitting diode flat panel lamp of claim 11, further comprising a diffusing plate disposed on one side of the filter plate to diffuse the illumination light emitted from the filter plate, so that The illumination light is homogenized. The light-emitting diode flat panel lamp of claim 11, further comprising a frame fixed to the casing for covering the light-emitting diode light source and the filter plate.