TWM530477U - An optical measuring apparatus for light emitting diodes - Google Patents

An optical measuring apparatus for light emitting diodes Download PDF

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Publication number
TWM530477U
TWM530477U TW105203327U TW105203327U TWM530477U TW M530477 U TWM530477 U TW M530477U TW 105203327 U TW105203327 U TW 105203327U TW 105203327 U TW105203327 U TW 105203327U TW M530477 U TWM530477 U TW M530477U
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Taiwan
Prior art keywords
light
emitting diode
carrier
region
detecting device
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TW105203327U
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Chinese (zh)
Inventor
趙堂鐘
尤家鴻
何啟新
曾培翔
陳達享
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晶元光電股份有限公司
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Priority to TW105203327U priority Critical patent/TWM530477U/en
Publication of TWM530477U publication Critical patent/TWM530477U/en

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Abstract

This present invention provides an optical measuring apparatus for light emitting diodes comprising: a chuck to carry a light emitting diode, and a transparency of a part or all area of the chuck is adjustable; a probe facing the chuck to detect the electric property of the light emitting diode; and a light receiver facing the chuck to collect the light emitted by the light emitting diode.

Description

一種發光二極體的光學檢測裝置Optical detecting device for light emitting diode

本創作是有關於一種發光二極體的光學檢測裝置,且特別有關於一種用於檢測發光二極體發光強度的檢測裝置。The present invention relates to an optical detecting device for a light emitting diode, and more particularly to a detecting device for detecting the luminous intensity of a light emitting diode.

發光二極體的結構有水平式、垂直式以及覆晶式三種。水平式發光二極體中,其兩個電極係設置於發光層之上,因此發光層受到電極之遮蔽而降低了發射光源之面積,便降低了其發光效率。同樣地,垂直式發光二極體的其中一個電極覆蓋在發光層上,亦降低了發光效率。相對地,覆晶式發光二極體的兩個電極與發光層係設置於基板的兩個相反面上,亦即,發光層不會受到電極的影響,因而使覆晶式發光二極體具有三種結構中最佳的發光效率。同時,覆晶式發光二極體還具有較小的熱衰退,相當適合用於發光二極體照明元件。The structure of the light-emitting diode has three types: horizontal, vertical, and flip-chip. In the horizontal light-emitting diode, the two electrodes are disposed on the light-emitting layer, so that the light-emitting layer is shielded by the electrode to reduce the area of the light source, thereby reducing the light-emitting efficiency. Similarly, one of the electrodes of the vertical light-emitting diode is covered on the light-emitting layer, which also reduces the luminous efficiency. In contrast, the two electrodes of the flip-chip light-emitting diode and the light-emitting layer are disposed on two opposite faces of the substrate, that is, the light-emitting layer is not affected by the electrode, so that the flip-chip light-emitting diode has The best luminous efficiency among the three structures. At the same time, the flip-chip light-emitting diode also has a small thermal decay, which is quite suitable for the light-emitting diode lighting element.

一般而言,發光二極體晶粒必須先通過測試後才能進行實際的應用,發光二極體的測試流程係將載有發光二極體之晶圓展開後承載於一檢測裝置之載具上,接著以探針接觸電極並通以電流使得發光二極體發光,再透過收光器(例如積分球或太陽能電池)檢測發光特性,並藉由探針檢測發光二極體之電性。In general, the LED die must pass the test before it can be used in practice. The test procedure of the LED is to carry the wafer carrying the LED and then carry it on a carrier of the detecting device. Then, the probe is contacted with the electrode and an electric current is passed to cause the light emitting diode to emit light, and then the light emitting property is detected by a light receiver (for example, an integrating sphere or a solar cell), and the electrical properties of the light emitting diode are detected by the probe.

請參閱第1A圖,其顯示的是一種習知發光二極體的光學檢測裝置100。此習知發光二極體的檢測裝置100包括一載具110、一收光器120及一光偵測器130。載具110包括一承載台(chuck)140以及一支撐體(holder)150支撐承載台140,該支撐體150表面具有一真空孔155。一擴張膜180(例如藍膜或白膜) 用以貼附複數待檢測的發光二極體170於其表面上並可經擴晶步驟使擴張膜180表面的複數待檢測的發光二極體170彼此以預定的距離互相間隔,一夾持內環160A與一夾持外環160B夾持擴張膜180並且固定於支撐體150外。一抽氣裝置(未顯示)連通該真空孔155以將該載具與該擴張膜180之間的氣體抽出,使擴張膜180吸附於承載台140表面。測試時,二點測器190分別連接發光二極體170表面的正電極175A及負電極175B並點亮發光二極體170,使檢測中的發光二極體170所發出的光由收光器120的收光端125射入,然後再將收光器120所收集到的光線傳送到與收光器120連接的光偵測器130以進行光學檢測。Please refer to FIG. 1A, which shows an optical detecting device 100 of a conventional light-emitting diode. The detection device 100 of the conventional LED includes a carrier 110, a light receiver 120 and a photodetector 130. The carrier 110 includes a chuck 140 and a holder 150 supporting the carrier 140. The support 150 has a vacuum hole 155 on its surface. An expanding film 180 (for example, a blue film or a white film) is attached to the surface of the plurality of light-emitting diodes 170 to be detected, and the plurality of light-emitting diodes 170 to be detected on the surface of the expanded film 180 may be subjected to a crystal expanding step. They are spaced apart from one another by a predetermined distance, and a clamping inner ring 160A and a clamping outer ring 160B sandwich the expansion film 180 and are fixed outside the support body 150. An evacuation device (not shown) communicates with the vacuum hole 155 to extract the gas between the carrier and the expansion membrane 180, so that the expansion membrane 180 is adsorbed on the surface of the stage 140. During the test, the two-point measuring device 190 is respectively connected to the positive electrode 175A and the negative electrode 175B on the surface of the light-emitting diode 170 and illuminates the light-emitting diode 170, so that the light emitted by the detecting light-emitting diode 170 is received by the light receiver. The light receiving end 125 of the 120 is incident, and then the light collected by the light receiver 120 is transmitted to the light detector 130 connected to the light receiver 120 for optical detection.

請參照第1B圖,當使用該習知用於發光二極體的光學檢測裝置100自真空孔155抽氣時,位於真空孔155上的擴張膜180會因距離真空孔155較近而迅速貼附於真空孔155,並直接阻擋真空孔155,使得位於承載台140與擴張膜180之間的空氣無法順利排出,進而造成擴張膜180無法平整貼附於於承載台140表面,導致點測器190在檢測每一發光二極體170時,上下針的距離必須拉長才能降低載具110移動時造成發光二極體170被點測器190刮傷的機率,造成檢測速度降低。此外,擴張膜180無法平整貼附於承載台140表面也將造成點測器190在下針時滑動,或發光二極體170容易發生位移或旋轉而導致量測時電性不穩。Referring to FIG. 1B, when the optical detecting device 100 for the light-emitting diode is used to evacuate from the vacuum hole 155, the expanded film 180 on the vacuum hole 155 is quickly attached by being close to the vacuum hole 155. It is attached to the vacuum hole 155 and directly blocks the vacuum hole 155, so that the air between the bearing table 140 and the expansion film 180 cannot be smoothly discharged, thereby causing the expansion film 180 to be unevenly attached to the surface of the carrier 140, resulting in a spot detector. When detecting each of the light-emitting diodes 170, the distance between the upper and lower needles must be elongated to reduce the probability that the light-emitting diode 170 is scratched by the spot detector 190 when the carrier 110 moves, resulting in a decrease in the detection speed. In addition, the inability of the expansion film 180 to be flatly attached to the surface of the stage 140 will also cause the spot detector 190 to slide when the needle is lowered, or the light-emitting diode 170 may be easily displaced or rotated to cause electrical instability during measurement.

有鑑於此,本創作乃揭露一種適用於發光二極體的光學檢測裝置,藉以改善上述習知用於發光二極體的光學檢測裝置的缺點。In view of this, the present invention discloses an optical detecting device suitable for a light-emitting diode, thereby improving the disadvantages of the above-described optical detecting device for a light-emitting diode.

本創作之一特徵是提供一種發光二極體的光學檢測裝置,包括:一承載台,用以承載待檢測的發光二極體,該承載台之局部或全部區域之透光度具可調變性;一點測器,朝向該承載台設置,用以檢測發光二極體的電性;以及一收光器,朝向該承載台設置,以收集檢測時該發光二極體所發出的光線。One of the features of the present invention is to provide an optical detecting device for a light-emitting diode, comprising: a carrying platform for carrying the light-emitting diode to be detected, and the transmittance of the part or the whole region of the carrying table is adjustable and denatured a point detector disposed toward the carrier for detecting electrical conductivity of the LED; and a light receiver disposed toward the carrier to collect light emitted by the LED during detection.

以下將詳細說明本創作實施例之製作與使用方式。然應注意的是,本創作提供許多可供應用的創作概念,其可以多種特定形式實施。文中雖然以發光二極體元件作為舉例討論之特定實施例,然其僅為製造與使用本創作之特定方式,非用以限制本創作之範圍,任何具有相似結構的半導體元件也可適用於本創作。 實施例一: The manner in which the present creative embodiment is made and used will be described in detail below. It should be noted, however, that this creation provides a number of creative concepts that can be applied, which can be implemented in a variety of specific forms. Although a specific embodiment of the illuminating diode component is discussed herein, it is only a specific way of making and using the present invention, and is not intended to limit the scope of the present invention. Any semiconductor component having a similar structure may also be applied to the present invention. creation. Embodiment 1:

以下將配合第2A~2E圖繪示的剖面示意圖,說明根據本創作實施例一的發光二極體光學檢測裝置。Hereinafter, the light-emitting diode optical detecting device according to the first embodiment of the present invention will be described with reference to the cross-sectional schematic views shown in FIGS. 2A-2E.

首先,請參照第2A圖,其顯示的是本創作實施例一的發光二極體的光學檢測裝置200,光學檢測裝置200包括一載具210及一收光器220,並且較佳另包含一光偵測器230及一點測器290。載具210包括一承載台(chuck)240以及一支撐體(holder)250支撐承載台240,該承載台240係用以承載待測之發光二極體270,該支撐體250設有一第一真空孔255,且該光偵測器230及該點測器290係朝向該承載台240設置。First, please refer to FIG. 2A, which shows an optical detecting device 200 for a light-emitting diode according to the first embodiment of the present invention. The optical detecting device 200 includes a carrier 210 and a light receiver 220, and preferably further includes a The photodetector 230 and the spot detector 290. The carrier 210 includes a chuck 240 and a holder 250 supporting the carrier 240. The carrier 240 is used to carry the LED 270 to be tested. The support 250 is provided with a first vacuum. The hole 255 is disposed, and the photodetector 230 and the spot detector 290 are disposed toward the carrying platform 240.

請參照第2B圖及第2C圖,其中第2B圖繪示的是本實施例的發光二極體光學檢測裝置中之載具210的剖面圖,而第2C圖繪示的本實施例的發光二極體光學檢測裝置中之載具210的俯視圖,其中,第2B圖為沿第2C圖的剖面線B-B’所呈現的剖面圖。Please refer to FIG. 2B and FIG. 2C , wherein FIG. 2B is a cross-sectional view of the carrier 210 in the light-emitting diode optical detecting device of the embodiment, and FIG. 2C illustrates the light-emitting of the embodiment. A plan view of the carrier 210 in the diode optical detecting device, wherein FIG. 2B is a cross-sectional view taken along line B-B' of FIG. 2C.

請先參照第2B圖所示,該承載台240具有一第一表面240a及一第二表面240b,該第一表面240a係與該第二表面240b相對,該第一表面240a係用以承載待測之發光二極體270。該承載台240的材質可以為透明或不透明,本實施例中的承載台240係呈現透明,使光得以穿過該承載台240,藉此檢測覆晶式發光二極體之發光特性。本實施例之承載台240為以透明的石英所構成,在本創作的其他實施例中,承載台240之材質也可選用透明的壓克力或玻璃。該支撐體250係圍繞承載台240並具有一凸部251,該凸部251係凸出於該承載台240之第一表面240a,使該支撐體250之凸部251與該承載台240之第一表面240a共同界定一凹穴260。該凸部251具有一側表面250a,且該側表面250a係朝向並環繞於該凹穴260,該第一真空孔255連通於該凹穴260,且本實施例之該第一真空孔255設於該側表面250a。Referring to FIG. 2B, the loading platform 240 has a first surface 240a and a second surface 240b. The first surface 240a is opposite to the second surface 240b. The first surface 240a is for carrying The light-emitting diode 270 was measured. The material of the carrier 240 may be transparent or opaque. The carrier 240 in this embodiment is transparent to allow light to pass through the carrier 240, thereby detecting the light-emitting characteristics of the flip-chip diode. The carrier 240 of the present embodiment is constructed of transparent quartz. In other embodiments of the present invention, the material of the carrier 240 may also be made of transparent acrylic or glass. The support body 250 surrounds the loading platform 240 and has a convex portion 251 protruding from the first surface 240a of the loading platform 240, so that the convex portion 251 of the support body 250 and the carrying platform 240 are A surface 240a collectively defines a pocket 260. The convex portion 251 has a side surface 250a, and the side surface 250a faces and surrounds the recess 260. The first vacuum hole 255 communicates with the recess 260, and the first vacuum hole 255 of the embodiment is provided. On the side surface 250a.

另請參照第2C圖,在本實施例之發光二極體的光學檢測裝置係包含數個第一真空孔255,並且相鄰的兩個第一真空孔255之間是以一隔牆256相分隔,該數個第一真空孔255係排列且環設於該支撐體250,各該第一真空孔255可為一圓形並具有一孔徑例如約2mm;而在本創作的其他實施例中,第一真空孔255係包含寬度約2mm的一長方形氣孔,該長方形氣孔係環設於該支撐體250。Referring to FIG. 2C, the optical detecting device of the light emitting diode of the embodiment includes a plurality of first vacuum holes 255, and the adjacent two first vacuum holes 255 are separated by a partition wall 256. Separating, the plurality of first vacuum holes 255 are arranged and ringed on the support body 250, and each of the first vacuum holes 255 may be circular and have an aperture of, for example, about 2 mm; and in other embodiments of the present creation The first vacuum hole 255 is a rectangular air hole having a width of about 2 mm, and the rectangular air hole ring is disposed on the support body 250.

請參照第2D及2E圖,此為本創作一實施例之發光二極體光學檢測裝置使用示意圖。其中係將複數待檢測的發光二極體270貼附於擴張膜280,擴張膜280係以夾持內環262A與夾持外環262B共同固定於支撐體250。本實施例中所用的擴張膜280,其材質是藍膜,在根據本創作的實施例中,擴張膜280之材質可選用白膜、解膠膜(UV release tape)或聚苯二甲酸乙二酯(PET)。此外,為使發光二極體270在量測時的收光角度變大,可先經擴晶步驟使擴張膜280表面複數待檢測的發光二極體270彼此以預定的距離互相間隔後,再固定於夾持內環262A與夾持外環262B之間,然後再將夾持內環262A與夾持外環262B置放於載具210。藉由連通於該第一真空孔255的一抽氣裝置(未顯示)對支撐體250的第一真空孔255抽氣,使承載台240與擴張膜280之間的空氣被抽離,進而使涵蓋複數個待檢測發光二極體270的擴張膜280因受負壓而平整地吸附於承載台240表面,如第2E圖所示。Please refer to FIGS. 2D and 2E , which are schematic diagrams showing the use of the light-emitting diode optical detecting device according to an embodiment of the present invention. The plurality of light-emitting diodes 270 to be detected are attached to the expansion film 280, and the expansion film 280 is fixed to the support body 250 by the clamp inner ring 262A and the clamp outer ring 262B. The expansion film 280 used in this embodiment is made of a blue film. In the embodiment according to the present invention, the material of the expansion film 280 may be a white film, a UV release tape or a polyethylene phthalate. Ester (PET). In addition, in order to increase the light-receiving angle of the light-emitting diode 270 during measurement, the plurality of light-emitting diodes 270 to be detected on the surface of the expanded film 280 may be separated from each other by a predetermined distance through the crystal expansion step, and then It is fixed between the clamp inner ring 262A and the clamp outer ring 262B, and then the clamp inner ring 262A and the clamp outer ring 262B are placed on the carrier 210. The first vacuum hole 255 of the support body 250 is evacuated by an air suction device (not shown) connected to the first vacuum hole 255, so that the air between the carrier table 240 and the expansion membrane 280 is evacuated, thereby The expanded film 280 covering a plurality of light-emitting diodes 270 to be detected is uniformly adsorbed on the surface of the stage 240 by a negative pressure, as shown in FIG. 2E.

請參照第2A圖,當使用光學檢測裝置200進行發光二極體的光學檢測時,將該收光器220朝向該承載台240之第一表面240a或第二表面240b設置,並以點測器290逐一通電流至每一個發光二極體270表面的正、負電極275A、275B,以依序點亮每一個發光二極體晶粒270,並且使檢測中的發光二極體270所發出的光透過收光端225進入收光器220內,最後再將收光器220所收集到的光線傳送到與收光器220連接的光偵測器230進行後續光學檢測,該光偵測器230可以為一光譜儀,該點測器290可以為兩個探針,在檢測時分別連接於發光二極體270之正電極275A及負電極275B。當該發光二極體為覆晶式發光二極體時,該收光器230之收光端225係朝向該第二表面240a設置,且該承載台240為透明,使覆晶式發光二極體所發出的光係向下穿透承載台240,以到達位於該承載台240下方之收光器220以檢測,而當該發光二極體270為水平式或垂直式發光二極體時,則該收光器220可以朝向該承載台240之第一表面240a或第二表面240b,以於適當方向進行收光。 實施例二: Referring to FIG. 2A, when the optical detecting device 200 is used for optical detection of the light emitting diode, the light receiver 220 is disposed toward the first surface 240a or the second surface 240b of the loading table 240, and is configured as a spot detector. 290 passes current to the positive and negative electrodes 275A, 275B on the surface of each of the light-emitting diodes 270 to sequentially illuminate each of the light-emitting diode crystal grains 270, and causes the light-emitting diode 270 in the detection to emit The light enters the light receiver 220 through the light receiving end 225, and finally the light collected by the light receiver 220 is transmitted to the light detector 230 connected to the light receiver 220 for subsequent optical detection. The light detector 230 It can be a spectrometer. The detector 290 can be two probes, which are respectively connected to the positive electrode 275A and the negative electrode 275B of the LED 270 when detecting. When the light-emitting diode is a flip-chip light-emitting diode, the light-receiving end 225 of the light receiver 230 is disposed toward the second surface 240a, and the carrier 240 is transparent to enable the flip-chip light-emitting diode The light emitted by the body penetrates the carrier 240 downward to reach the light receiver 220 located below the carrier 240 for detection, and when the LED 270 is a horizontal or vertical LED, The light receiver 220 can face the first surface 240a or the second surface 240b of the stage 240 to receive light in an appropriate direction. Embodiment 2:

以下將配合第3A及3B圖說明一種適用於根據本創作實施例二的發光二極體光學檢測裝置的載具剖面示意圖。A cross-sectional view of a carrier suitable for the light-emitting diode optical detecting apparatus according to the second embodiment of the present invention will be described below with reference to FIGS. 3A and 3B.

首先,請參照第3A圖,其顯示的是另一個適用於根據本創作實施例二的發光二極體的光學檢測裝置的載具310。載具310大抵與實施例一的載具210相似,均包括一承載台340及一支撐體350支撐承載台340。該承載台340具有一第一表面340a及一第二表面340b,該第一表面340a係與該第二表面340b相對,該第一表面340a係用以承載待測之發光二極體。該承載台340的材質可以為透明或不透明,本實施例中的承載台340之材質是由透明石英所構成,在根據本創作的其他實施例中,承載台340之材質也可選用透明的壓克力或玻璃。First, referring to Fig. 3A, there is shown another carrier 310 suitable for the optical detecting device of the light-emitting diode according to the second embodiment of the present invention. The carrier 310 is similar to the carrier 210 of the first embodiment, and includes a carrier 340 and a support body 350 supporting the carrier 340. The first 340a is opposite to the second surface 340b. The first surface 340a is used to carry the LED to be tested. The material of the carrier 340 may be transparent or opaque. The material of the carrier 340 in this embodiment is made of transparent quartz. In other embodiments according to the present invention, the material of the carrier 340 may also be transparent. Cree or glass.

該支撐體350係圍繞承載台340並具有一凸部351,該凸部351係凸出於該承載台340之第一表面340a,使該支撐體350之凸部351與該承載台340之第一表面340a共同界定一凹穴360,該凸部351具有一側表面350a,側表面350a係朝向並環繞於該凹穴360,且該第一真空孔255設於該側表面350a而朝向該凹穴360並連通於該凹穴360。本實施例之該凸部351另包含一上表面350b,該上表面350B為凸伸於該承載台340且遠離該第一表面340a之一表面,且該上表面350b與該側表面350a相連接,本實施例之支撐體350除了有設於該凸部351的側表面350a之第一真空孔355A外,另設有第二真空孔355B,且該第二真空孔355B設於該凸部351之上表面350b。在一實施例中,該支撐體350係設有數個第一真空孔355A及/或數個第二真空孔355B,且第一真空孔355A及/或第二真空孔355B的孔徑大小約2mm,而在根據本創作的其他實施例中,兩個相鄰第一真空孔355A及/或兩個相鄰第二真空孔355B之間具有一隔牆(圖未示),且數個第一真空孔355A及/或第二真空孔355B係環繞該凹穴360。The support body 350 surrounds the loading platform 340 and has a convex portion 351 protruding from the first surface 340a of the loading platform 340, so that the convex portion 351 of the support body 350 and the carrying platform 340 are A surface 340a defines a recess 360 having a side surface 350a facing away from and surrounding the recess 360, and the first vacuum hole 255 is disposed on the side surface 350a toward the recess The pocket 360 is in communication with the pocket 360. The convex portion 351 of the embodiment further includes an upper surface 350b protruding from the loading platform 340 and away from a surface of the first surface 340a, and the upper surface 350b is connected to the side surface 350a. The support body 350 of the present embodiment has a second vacuum hole 355B disposed in addition to the first vacuum hole 355A disposed on the side surface 350a of the convex portion 351, and the second vacuum hole 355B is disposed on the convex portion 351. Upper surface 350b. In one embodiment, the support body 350 is provided with a plurality of first vacuum holes 355A and/or a plurality of second vacuum holes 355B, and the first vacuum holes 355A and/or the second vacuum holes 355B have a hole size of about 2 mm. In other embodiments according to the present invention, a partition wall (not shown) is disposed between two adjacent first vacuum holes 355A and/or two adjacent second vacuum holes 355B, and a plurality of first vacuums Holes 355A and/or second vacuum holes 355B surround the pockets 360.

請參照第3B圖所示,利用本創作一實施例之發光二極體光學檢測裝置檢測時,先提供一表面包括有複數待檢測的發光二極體370的擴張膜380,並固定於夾持內環362A與夾持外環362B之間,然後再將夾持內環362A與夾持外環362B置放於載具310上,且夾持內環362A與夾持外環362B是環繞於支撐體350外。本實施例於支撐體350設有第二真空孔355B係能夠提高表面包括有複數待檢測發光二極體370的擴張膜380被負壓吸附到承載台340的吸附速率及均勻度。此外,為使發光二極體370在量測時的收光角度變大,可先經擴晶手續使擴張膜380表面的複數檢測的發光二極體370彼此以預定的距離互相間隔後,再固定於夾持內環362A與夾持外環362B之間,然後再將夾持內環362A與夾持外環362B置放於載具310上進行後續光學量測。Referring to FIG. 3B, when the light-emitting diode optical detecting device of the present embodiment is used for detecting, an expansion film 380 having a surface including a plurality of light-emitting diodes 370 to be detected is first provided and fixed to the holder. Between the inner ring 362A and the clamping outer ring 362B, the clamping inner ring 362A and the clamping outer ring 362B are then placed on the carrier 310, and the clamping inner ring 362A and the clamping outer ring 362B are surrounded by the support. Outside the body 350. In this embodiment, the second vacuum hole 355B is disposed on the support body 350 to increase the adsorption rate and uniformity of the expansion film 380 including the plurality of light-emitting diodes 370 to be detected by the negative pressure adsorption to the carrier 340. Further, in order to increase the light-receiving angle of the light-emitting diode 370 at the time of measurement, the plurality of light-emitting diodes 370 on the surface of the expanded film 380 may be spaced apart from each other by a predetermined distance by a crystal expansion process, and then It is fixed between the clamping inner ring 362A and the clamping outer ring 362B, and then the clamping inner ring 362A and the clamping outer ring 362B are placed on the carrier 310 for subsequent optical measurement.

接著,藉由與支撐體350連接的一抽氣裝置(未顯示)對支撐體350的第一真空孔355A及第二真空孔355B抽氣,使承載台340與擴張膜380之間的空氣被抽離,進而使涵蓋複數待檢測發光二極體370的擴張膜380被負壓均勻地吸附於承載台340之第一表面340a,然後再以點測器390逐一連接每一個發光二極體370表面的正、負電極375A、375B,依序點亮每一個發光二極體370,並且使檢測中的發光二極體370所發出的光向下穿透承載台340,再如實施例一所述般,進入位在載具310下方的收光器(未顯示)及與收光器連接的光偵測器(未顯示),進行後續光學檢測。 實施例三: Next, the first vacuum hole 355A and the second vacuum hole 355B of the support body 350 are evacuated by an air suction device (not shown) connected to the support body 350, so that the air between the carrier table 340 and the expansion film 380 is The extraction film 380 covering the plurality of LEDs 370 to be detected is uniformly adsorbed by the negative pressure on the first surface 340a of the carrier 340, and then connected to each of the LEDs 370 one by one by the detector 390. The positive and negative electrodes 375A, 375B of the surface sequentially illuminate each of the light-emitting diodes 370, and cause the light emitted by the light-emitting diode 370 to penetrate the carrier 340 downward, as in the first embodiment. As described, a light receiver (not shown) positioned below the carrier 310 and a photodetector (not shown) coupled to the light receiver are used for subsequent optical inspection. Embodiment 3:

以下將配合第4A~4B圖說明一種適用於根據本創作實施例三的發光二極體光學檢測裝置的載具剖面示意圖。A cross-sectional view of a carrier suitable for the light-emitting diode optical detecting apparatus according to the third embodiment of the present invention will be described below with reference to FIGS. 4A to 4B.

首先,請參照第4A圖,其顯示的是另一個適用於根據本創作實施例三的發光二極體光學檢測裝置的載具410。載具410大抵與實施例一的載具210相似,均包括包括一承載台440及一支撐體450支撐承載台440,該承載台440具有一第一表面440a及一第二表面440b,該第一表面440a係與該第二表面440b相對,該第一表面440a係用以承載待測之發光二極體。該承載台440的材質可以為透明或不透明,本實施例中的承載台440之材質是由透明石英所構成,在根據本創作的其他實施例中,承載台440之材質也可選用透明的壓克力或玻璃。First, referring to FIG. 4A, there is shown another carrier 410 suitable for the light-emitting diode optical detecting apparatus according to the third embodiment of the present invention. The carrier 410 is similar to the carrier 210 of the first embodiment, and includes a carrier 440 and a support body 450 supporting the carrier 440. The carrier 440 has a first surface 440a and a second surface 440b. A surface 440a is opposite to the second surface 440b for carrying the light-emitting diode to be tested. The material of the carrier 440 may be transparent or opaque. The material of the carrier 440 in this embodiment is made of transparent quartz. In other embodiments according to the present invention, the material of the carrier 440 may also be transparent. Cree or glass.

該支撐體450係圍繞承載台440並具有一凸部451,該凸部451係凸出於該承載台440之第一表面440a,使該支撐體450之凸部451與該承載台440之第一表面440a共同界定一凹穴460,且一第三真空孔455C係設於該支撐體450上。詳而言之,該支撐體450係具有一本體452及一延伸部453,該凸部451係設於該本體452,該延伸部453連接於該本體452並朝向承載台440的方向延伸,使該本體452與該承載台440之間以該延伸部453相連接,使該本體452與該承載台440隔開一間隙454,該間隙454與該凹穴460相連通,其中,一第三真空孔455C設於該延伸部453並連通於該凹穴460。The support body 450 surrounds the loading platform 440 and has a convex portion 451 protruding from the first surface 440a of the loading platform 440, so that the convex portion 451 of the support body 450 and the loading platform 440 are A surface 440a defines a recess 460, and a third vacuum hole 455C is attached to the support 450. In detail, the support body 450 has a body 452 and an extension portion 453. The protrusion 451 is attached to the body 452. The extension portion 453 is coupled to the body 452 and extends toward the carrying platform 440. The body 452 and the carrying platform 440 are connected by the extending portion 453, so that the body 452 is separated from the carrying platform 440 by a gap 454, and the gap 454 is in communication with the recess 460, wherein a third vacuum A hole 455C is provided in the extension portion 453 and communicates with the recess 460.

此外,本實施例之載具410中具有數個第三真空孔455C,且相鄰的兩個第三真空孔455C之間隙設有一隔牆(圖未示),且數個第三真空孔455C環設於該承載台440之外周緣,該第三真空孔455C的孔徑大小約2mm;而在根據本創作的其他實施例中,該載具410僅設有一個第三真空孔455C,且該第三真空孔455C環設於該承載台440的外周緣,第三真空孔355C呈現寬度約2mm的隙縫狀。In addition, the carrier 410 of the embodiment has a plurality of third vacuum holes 455C, and a gap between adjacent two third vacuum holes 455C is provided with a partition wall (not shown), and a plurality of third vacuum holes 455C The ring is disposed on the outer periphery of the carrying platform 440, and the third vacuum hole 455C has a hole size of about 2 mm; and in other embodiments according to the present creation, the carrier 410 is only provided with a third vacuum hole 455C, and the The third vacuum hole 455C is annularly disposed on the outer periphery of the carrier 440, and the third vacuum hole 355C is formed in a slit shape having a width of about 2 mm.

請參照第4B圖所示,利用本創作一實施例之發光二極體光學檢測裝置檢測時,先提供一表面包括有複數待檢測發光二極體470的擴張膜480,並固定於夾持內環462A與夾持外環462B之間,再將夾持內環462A與夾持外環462B置放於載具410上,且夾持內環462A與夾持外環462B是環繞於支撐體(holder)450外。此外,為使發光二極體470在量測時的收光角度變大,可先經擴晶手續使擴張膜480表面的複數待檢測發光二極體470彼此以預定的距離互相間隔後,再固定於夾持內環462A與夾持外環462B之間,然後再置放於載具410上進行後續光學量測。Referring to FIG. 4B, when detecting by the light-emitting diode optical detecting device according to the embodiment of the present invention, an expansion film 480 having a surface including a plurality of light-emitting diodes 470 to be detected is first provided and fixed in the holder. Between the ring 462A and the clamping outer ring 462B, the clamping inner ring 462A and the clamping outer ring 462B are placed on the carrier 410, and the clamping inner ring 462A and the clamping outer ring 462B are wrapped around the support body ( Holder) 450 outside. In addition, in order to increase the light-receiving angle of the light-emitting diode 470 during measurement, the plurality of light-emitting diodes 470 to be detected on the surface of the expanded film 480 may be spaced apart from each other by a predetermined distance through a crystal expansion process. It is fixed between the clamping inner ring 462A and the clamping outer ring 462B, and then placed on the carrier 410 for subsequent optical measurement.

接著,藉由一與支撐體450連接的抽氣裝置(未顯示)對第三真空孔455C抽氣,使承載台440與擴張膜480之間的空氣被抽離,進而使涵蓋複數待檢測的發光二極體470擴張膜480被負壓均勻地吸附於承載台440表面,然後再以點測器490逐一連接每一個發光二極體470表面的正、負電極475A、475B,點亮每一個發光二極體470,並且使發光二極體470所發出的光向下穿透承載台440,再如實施例一所述般,進入位在載具410下方的收光器(未顯示)及與收光器連接的光偵測器(未顯示),進行後續光學檢測。 實施例四: Next, the third vacuum hole 455C is evacuated by an air suction device (not shown) connected to the support body 450, so that the air between the carrier table 440 and the expansion film 480 is evacuated, thereby covering a plurality of to be detected. The light-emitting diode 470 expansion film 480 is uniformly adsorbed on the surface of the carrier 440 by a negative pressure, and then the positive and negative electrodes 475A and 475B of the surface of each of the light-emitting diodes 470 are connected one by one by a spot detector 490 to illuminate each one. Light-emitting diode 470, and the light emitted by the light-emitting diode 470 is penetrated downward through the carrier 440, and as shown in the first embodiment, enters a light collector (not shown) located below the carrier 410 and A photodetector (not shown) connected to the receiver for subsequent optical inspection. Embodiment 4:

以下將配合第5A~5B圖說明根據本創作實施例四的發光二極體光學檢測裝置的載具中的承載台示意圖。A schematic diagram of a carrier in the carrier of the light-emitting diode optical detecting apparatus according to the fourth embodiment of the present invention will be described below with reference to FIGS. 5A to 5B.

首先,請參照第5A圖,此為利用本創作實施例四的承載台540量測待檢測的發光二極體570時的俯視圖,承載台540可以適用於如實施例一至三中的發光二極體光學檢測裝置的載具210、310、410,並取代其對應之承載台240、340、440。該承載台540包括一種可控制光穿透度的材質,使該承載台540之局部或全部區域之透光度具可調變性,例如在量測待檢測的發光二極體570時,該承載台540包含一第一區域541及一第二區域542環繞該第一區域541。該第一區域541或/及該第二區域542之透光度係藉由一物理量分別調變,本實施例之該承載台540係具有環繞第一區域541之第二區域542。詳言之,在量測待檢側的發光二極體570時,數個待檢測的發光二極體570係對應位於該承載台540的第一區域541。該承載台540的材質可以包括液晶、電致變色物質或液態金屬,改變該承載台540之透光度的物理量可以為電或熱等,在本實施例中,相鄰的待檢測發光二極體570之間係以一走道d1隔開,且該承載台570的材料包含液晶。First, please refer to FIG. 5A, which is a top view of the light-emitting diode 570 to be detected by the carrying platform 540 of the fourth embodiment of the present invention. The carrying platform 540 can be applied to the light-emitting diodes as in the first to third embodiments. The carriers 210, 310, 410 of the bulk optical detection device are replaced by their corresponding carriers 240, 340, 440. The carrying platform 540 includes a material that can control the light transmittance, so that the transmittance of a part or all of the area of the carrying platform 540 can be variably denatured, for example, when measuring the light emitting diode 570 to be detected. The stage 540 includes a first area 541 and a second area 542 surrounding the first area 541. The transmittance of the first region 541 or/and the second region 542 is separately modulated by a physical quantity. The carrier 540 of the embodiment has a second region 542 surrounding the first region 541. In detail, when measuring the light-emitting diode 570 on the side to be inspected, a plurality of light-emitting diodes 570 to be detected correspond to the first region 541 of the carrier 540. The material of the carrying platform 540 may include a liquid crystal, an electrochromic substance or a liquid metal. The physical quantity for changing the transmittance of the carrying platform 540 may be electric or thermal, etc. In this embodiment, the adjacent light emitting diodes to be detected are adjacent. The bodies 570 are separated by a walkway d1, and the material of the carrier 570 contains liquid crystals.

請參照第5B圖所示,此為第5A圖所示之表面貼附一包括複數個彼此間隔排列之待檢測的發光二極體570的擴張膜580之承載台540的立體圖。如上面實施例所述,為使發光二極體570在量測時的收光角度變大,先經擴晶手續使擴張膜580表面的複數待檢測發光二極體570彼此以走道d1互相隔開,再進行後續光學檢測。Referring to FIG. 5B, the surface shown in FIG. 5A is attached with a perspective view of a carrier 540 including a plurality of expanded films 580 of the light-emitting diodes 570 to be detected spaced apart from each other. As described in the above embodiment, in order to increase the light-receiving angle of the light-emitting diode 570 during measurement, the plurality of light-emitting diodes 570 to be detected on the surface of the expanded film 580 are separated from each other by a walkway d1 through a crystal expansion process. Turn on, and then perform subsequent optical inspection.

本實施例之承載台540表面貼附有一包括複數個彼此間隔排列之待檢測發光二極體570的擴張膜580,且每一個發光二極體570均具有一正、負電極575A、575B。當擴張膜580被吸附在承載台540之第一表面540a後,係先定位待檢測的發光二極體570的位置,以利於後續將該承載台540區分為該第一區域541及該第二區域542;接著,改變該承載台540之透光度,使該第一區域541具有與該第二區域542不同的透光度,且該第一區域541涵蓋數個發光二極體570及走道d1,使數個發光二極體570及走道d1對應位於第一區域541上;及量測置於該第一區域541之該發光二極體570的放光特性。The surface of the carrier 540 of the present embodiment is attached with a plurality of expansion films 580 including a plurality of light-emitting diodes 570 to be detected spaced apart from each other, and each of the light-emitting diodes 570 has a positive and negative electrodes 575A, 575B. After the expansion film 580 is adsorbed on the first surface 540a of the carrier 540, the position of the LED 570 to be detected is first positioned to facilitate the subsequent division of the carrier 540 into the first region 541 and the second. a region 542; then, changing the transmittance of the carrier 540 such that the first region 541 has a different transmittance than the second region 542, and the first region 541 covers a plurality of light-emitting diodes 570 and aisles D1, the plurality of light-emitting diodes 570 and the walkway d1 are correspondingly located on the first region 541; and the light-emitting characteristics of the light-emitting diode 570 disposed in the first region 541 are measured.

本實施例之發光二極體的光學檢測方法係先藉由掃描置放有該發光二極體570之承載台540的影像,以定位擴張膜580上的待檢測的發光二極體570之位置後,藉由控制承載台540內液晶分子的排列方向,使涵蓋數個待檢測的發光二極體570及數個走道d1之第一區域541下方的承載台540轉變成一透光區,而其餘未涵蓋發光二極體570之第二區域542的液晶分子則不改變排列方向,而形成與該第一區域541具有不同透光率的該第二區域542。本實施例中,該第一區域541之透光率係高於該第二區域542之透光率。接著以朝向該承載台540設置的點測器590依序接觸每一個發光二極體570的正、負極575A、575B進行檢測,待檢測的發光二極體570所發出的光線穿透第一區域541,再如實施例一所述般,進入位在其下方的收光器(未顯示)及與收光器連接的光檢測器(未顯示),進行後續光學檢測。其中,檢測位在周圍處的發光二極體晶粒570時,因鄰近的其他發光二極體570反射所導致的檢測誤差,可藉由位在第一區域541周圍的第二區域542的反射光加以補償,使得位在擴張膜580上的各個待檢測的發光二極體570具有相同或接近的檢測環境,避免在量測發光二極體570發光特性時,因發光二極體570的位置不同而造成量測誤差過大。在根據本創作的其他實施例中,可控制光穿透度的材質也可選擇電致變色物質或液態金屬等。 實施例五: The optical detecting method of the light emitting diode of the present embodiment firstly positions the position of the light emitting diode 570 to be detected on the expanded film 580 by scanning the image of the carrying table 540 on which the light emitting diode 570 is placed. After that, by controlling the arrangement direction of the liquid crystal molecules in the carrying platform 540, the carrying platform 540 covering the plurality of LEDs 570 to be detected and the first region 541 of the plurality of lanes d1 is converted into a light transmitting region, and the rest The liquid crystal molecules not covering the second region 542 of the light-emitting diode 570 do not change the alignment direction, but form the second region 542 having a different light transmittance from the first region 541. In this embodiment, the transmittance of the first region 541 is higher than the transmittance of the second region 542. Then, the positive and negative electrodes 575A and 575B of each of the light-emitting diodes 570 are sequentially contacted with the spot detector 590 disposed toward the carrying platform 540 for detection, and the light emitted by the light-emitting diode 570 to be detected penetrates the first region. 541, as described in the first embodiment, enters a light receiver (not shown) positioned below it and a photodetector (not shown) coupled to the light receiver for subsequent optical detection. Wherein, when detecting the LED 570 located at the periphery, the detection error caused by the reflection of the adjacent other LEDs 570 can be reflected by the second region 542 located around the first region 541. The light is compensated such that each of the light-emitting diodes 570 to be detected located on the expanded film 580 has the same or close detection environment, avoiding the position of the light-emitting diode 570 when measuring the light-emitting characteristics of the light-emitting diode 570. The measurement error is too large due to the difference. In other embodiments according to the present invention, the material that can control the light transmittance may also be selected from an electrochromic substance or a liquid metal or the like. Embodiment 5:

以下將配合第6A~6B圖說明根據本創作實施例五的發光二極體光學檢測裝置的載具中的承載台示意圖。A schematic diagram of a carrier in the carrier of the light-emitting diode optical detecting apparatus according to the fifth embodiment of the present invention will be described below with reference to FIGS. 6A to 6B.

首先,請參照第6A圖,此為利用本創作實施例五的承載台640量測待檢測的發光二極體670時的俯視圖,該承載台640可以適用於如實施例一至三中的發光二極體光學檢測裝置的載具210、310、410,並取代其對應之承載台240、340、440。本實施例的承載台640與實施例四的承載台540相似,該承載台640包括一種可控制光穿透度的材質,使其局部或全部區域之透光度具可調變性,例如在量測待檢測的發光二極體670時,該承載台640包含一第一區域641及一第二區域642,以在量測待檢測的發光二極體670時,藉由一物理量調整第一區域641或/及該第二區域642之透光度。該承載台640的材質可以包括液晶、電致變色物質或液態金屬,其中改變該承載台640之透光度的物理量可以為電或熱等。惟,本實施例與上述實施例四的差異在於:檢測時,該承載台640的第一區域641僅涵蓋單一個待檢測的發光二極體670,意即僅一個待檢測的發光二極體670係對應位於該第一區域641,如第6A圖之最左下之發光二極體670。First, please refer to FIG. 6A, which is a top view of the light-emitting diode 670 to be detected by the loading platform 640 of the fifth embodiment of the present invention. The carrier 640 can be applied to the light-emitting diodes as in the first embodiment. The carriers 210, 310, and 410 of the polar body optical detecting device replace the corresponding carriers 240, 340, and 440. The carrying platform 640 of the present embodiment is similar to the carrying platform 540 of the fourth embodiment. The carrying platform 640 includes a material that can control the light transmittance, so that the transmittance of the local or all regions can be variably denatured, for example, in the amount. When the LED 670 to be detected is detected, the carrier 640 includes a first region 641 and a second region 642 to adjust the first region by a physical quantity when measuring the LED 670 to be detected. 641 or / and the transmittance of the second region 642. The material of the carrying platform 640 may include liquid crystal, electrochromic substance or liquid metal, wherein the physical quantity for changing the transmittance of the carrying platform 640 may be electric or thermal. However, the difference between the embodiment and the fourth embodiment is that the first region 641 of the carrier 640 covers only a single LED 670 to be detected, that is, only one LED to be detected. The 670 series corresponds to the light-emitting diode 670 located in the first region 641, such as the bottom left of FIG. 6A.

請參照第6B圖,此為第6A圖所示之表面貼附一包括複數個彼此間隔排列之待檢測的發光二極體670的擴張膜之承載台640的立體圖。透過實施例五之承載台640進行光學量測的方法包含:將數個發光二極體670置於該承載台640上;定位該發光二極體670的位置;改變該承載台640之透光度,使該承載台640區分為一第一區域641及一第二區域642,該第一區域641僅涵蓋一個待檢測的發光二極體670,其中該第一區域641為透光區並具有一透光度高於該第二區域642之透光度;及量測置於該第一區域641之該發光二極體670的放光特性。實施例五之承載台640係包含液晶材料,且透過施加電壓改變該第一區域641及/或該第二區域642的透光度。Referring to FIG. 6B, the surface shown in FIG. 6A is attached with a perspective view of a carrier 640 including a plurality of expanded films of the light-emitting diodes 670 to be detected spaced apart from each other. The method for optical measurement by the carrying platform 640 of the fifth embodiment includes: placing a plurality of light emitting diodes 670 on the carrying platform 640; positioning the position of the light emitting diode 670; changing the light transmission of the carrying platform 640 The first 641 is divided into a first region 641 and a second region 642. The first region 641 covers only one LED 670 to be detected, wherein the first region 641 is a light transmissive region and has A transmittance is higher than the transmittance of the second region 642; and the light-emitting characteristics of the LED 670 disposed in the first region 641 are measured. The carrier 640 of the fifth embodiment includes a liquid crystal material, and the transmittance of the first region 641 and/or the second region 642 is changed by applying a voltage.

本實施例之發光二極體的光學檢測方法係先藉由掃描置放有該發光二極體670之承載台640的影像,以定位擴張膜680上的數個待檢測發光二極體670之位置後,藉由控制承載台640內液晶分子的排列方向,使涵蓋一個待檢測的發光二極體670之區域下方的承載台640轉變成該透光區,而其餘未涵蓋發光二極體670之區域的液晶分子則不改變排列方向,而形成與該第一區域641具有不同透光率的該第二區域642。本實施例中,該第一區域641之透光率係高於該第二區域642。接著以點測器690接觸每一個發光二極體670的正、負極675A、675B進行檢測時,待檢測的發光二極體670所發出的光線穿透第一區域641,再如實施例一所述般,進入位在其下方的收光器(未顯示)及與收光器連接的光偵測器 (未顯示),進行後續光學檢測。其中,檢測位在周圍處的發光二極體晶粒670時,因鄰近的其他發光二極體晶粒670的光反射所導致的檢測誤差,可藉由位在第一區域641周圍的第二區域642的反射光加以補償,使得位在擴張膜680上的各個待檢測的發光二極體670具有相同或接近的檢測環境,避免在量測發光二極體670發光特性時,因發光二極體670的位置不同而造成量測誤差過大。The optical detection method of the LED of the present embodiment firstly scans the image of the carrier 640 on which the LED 670 is placed to position a plurality of LEDs 670 to be detected on the expansion film 680. After the position, by controlling the arrangement direction of the liquid crystal molecules in the carrying platform 640, the carrying platform 640 under the area covering the LED 670 to be detected is converted into the light transmitting area, and the rest does not cover the light emitting diode 670. The liquid crystal molecules in the region do not change the alignment direction, but form the second region 642 having a different light transmittance from the first region 641. In this embodiment, the light transmittance of the first region 641 is higher than the second region 642. Then, when the detector 690 contacts the positive and negative electrodes 675A and 675B of each of the light-emitting diodes 670 for detection, the light emitted by the light-emitting diode 670 to be detected penetrates the first region 641, and as in the first embodiment. As described above, a light receiver (not shown) positioned below it and a photodetector (not shown) connected to the light receiver are subjected to subsequent optical detection. Wherein, when detecting the light-emitting diode crystal grains 670 located at the periphery, the detection error caused by the light reflection of the adjacent other light-emitting diode crystal grains 670 may be caused by the second position around the first region 641 The reflected light of the region 642 is compensated, so that the respective LEDs 670 to be detected located on the expansion film 680 have the same or close detection environment, avoiding the measurement of the light-emitting characteristics of the LED 670 due to the light-emitting diode The position of the body 670 is different and the measurement error is too large.

利用本實施例的該承載台640進行發光二極體670之光學特性量測的方法與第四實施例相似,主要差異在於本實施例之承載台640的第一區域641的位置係隨著不同量測目標之發光二極體670所在的位置而改變。詳言之,該承載台640上係具有數個發光二極體670,如第6A圖所示的第一發光二極體671、第二發光二極體672及第三發光二極體673等,本實施例之發光二極體的光學特性量測方法係分別依序量測上述第一、第二及第三發光二極體671、672、673,舉例而言,當量測第一發光二極體671的光學特性時,係調整承載台640之第一區域641的位置,使第一區域641對應位於第一發光二極體671且第二區域642則對應位於其餘發光二極體,使得僅有待檢測的第一發光二極體671下方的承載台641為透光區,以避免鄰近的其他發光二極體670(如672、673)對第一發光二極體671的光學特性量測造成反射而產生非預期性的影響,藉此更進一步提升量測準確度。同理,當欲量測第二發光二極體672、第三發光二極體673時,則調整承載台640之第一區域641的位置,使第一區域641對應位於第二發光二極體672或第三發光二極體673,且第二區域642則對應位於其餘發光二極體670,使所量測的發光二極體670周圍具有相同或接近的檢測環境。 實施例六: The method for performing the optical characteristic measurement of the light-emitting diode 670 by using the loading stage 640 of the present embodiment is similar to that of the fourth embodiment, and the main difference is that the position of the first region 641 of the carrying platform 640 of the present embodiment varies. The position of the light-emitting diode 670 of the measurement target is changed. In detail, the carrying platform 640 has a plurality of light emitting diodes 670, such as the first light emitting diode 671, the second light emitting diode 672, and the third light emitting diode 673 shown in FIG. 6A. The optical characteristic measurement method of the light-emitting diode of the present embodiment sequentially measures the first, second, and third light-emitting diodes 671, 672, and 673, respectively, for example, the equivalent first light-emitting When the optical characteristics of the diode 671 are adjusted, the position of the first region 641 of the carrier 640 is adjusted such that the first region 641 is corresponding to the first LED 671 and the second region 642 is corresponding to the remaining LEDs. The carrier 641 below the first LED 671 to be detected is a light transmissive region to avoid the optical characteristic of the adjacent LEDs 670 (eg, 672, 673) to the first LED 671. The measurement produces reflections that have unintended effects, thereby further improving measurement accuracy. Similarly, when the second LED 672 and the third LED 673 are to be measured, the position of the first region 641 of the carrier 640 is adjusted so that the first region 641 is corresponding to the second LED. 672 or the third light-emitting diode 673, and the second region 642 is corresponding to the remaining light-emitting diodes 670, so that the measured light-emitting diodes 670 have the same or close detection environment around them. Example 6:

以下將配合第7A~7C圖說明根據本創作實施例六的發光二極體光學檢測裝置的載具中的承載台示意圖。A schematic diagram of a carrier in the carrier of the light-emitting diode optical detecting apparatus according to the sixth embodiment of the present invention will be described below with reference to FIGS. 7A to 7C.

首先,請參照第7A圖,此為利用本創作實施例六的承載台740量測待檢測的發光二極體770時的俯視圖,該承載台740可以適用於如實施例一至三中所述的發光二極體光學檢測裝置的載具210、310、410,並取代其對應之承載台240、340、440。本實施例的承載台740與實施例四或五之承載台540或640相似,該承載台740包括一種可控制光穿透度的材質,使其局部或全部區域之透光度具可調變性,以在量測待檢測的發光二極體770時,藉由一物理量調整第一區域741或/及該第二區域742之透光度,該承載台740的材質可以包括液晶、電致變色物質或液態金屬,改變該承載台740之透光度的物理量可以為電或熱等。First, please refer to FIG. 7A, which is a top view of the light-emitting diode 770 to be detected by the carrier 740 of the sixth embodiment. The carrier 740 can be applied to the embodiments as described in the first to third embodiments. The carriers 210, 310, and 410 of the light-emitting diode optical detecting device are replaced by their corresponding carriers 240, 340, and 440. The carrying platform 740 of this embodiment is similar to the carrying platform 540 or 640 of the fourth or fifth embodiment, and the carrying platform 740 includes a material that can control the light transmittance, so that the transmittance of the local or all regions can be adjusted and modified. In order to measure the transmittance of the first region 741 or/and the second region 742 by a physical quantity when measuring the light-emitting diode 770 to be detected, the material of the carrier 740 may include liquid crystal and electrochromism. The physical quantity of the substance or liquid metal that changes the transmittance of the stage 740 may be electricity or heat.

請參照第7B圖,此為第7A圖所示之表面貼附一包括複數個彼此間隔排列之待檢測的發光二極體770的擴張膜780之承載台740的立體側視圖。請參照第7C圖所示,本實施例之承載台740係與上述實施例四或五相似,惟本實施例之承載台740另包含一反射層783,並透過一導光元件784將發光二極體770所放射的光收集送至收光器720中。詳言之,該承載台740包含一第一表面740a及相對於該第一表面740a之一第二表面740b,該第一表面740a係用以承載待檢測的發光二極體770,該反射層783係設於該第二表面740b上,且該反射層783與該第二表面740b之間具有一反射腔781,且該導光元件784具有一集光端784a,該集光端784a係結合於該承載盤740的反射腔781。其中,反射層783是由具高反射係數的材質所構成,本實施自所選用的高反射係數的材質是硫酸鋇。此外,在根據本創作的其他實施例中,該反射層783也可選擇銀、鋁等材料或布拉格反射鏡(DBR)結構等。透過實施例六之承載台740進行光學量測的方法包含:將數個發光二極體770置於該承載台740上;定位該發光二極體770的位置;改變該承載台740之透光度,使該承載台740區分為一第一區域741及一第二區域742,該第一區域741涵蓋一個或數個發光二極體770,其中該第一區域741為透光區並具有高於該第二區域742之透光度;及量測置於該第一區域741之該發光二極體770的放光特性。本實施例之承載台740係包含液晶材料,且透過施加電壓改變該第一區域741及/或該第二區域742的透光度。Referring to FIG. 7B, the surface shown in FIG. 7A is attached with a perspective side view of a carrier 740 including a plurality of expanded films 780 of the light-emitting diodes 770 to be detected spaced apart from each other. Referring to FIG. 7C, the carrier 740 of the present embodiment is similar to the fourth or fifth embodiment, but the carrier 740 of the embodiment further includes a reflective layer 783 and is illuminated by a light guiding component 784. The light emitted by the polar body 770 is collected and sent to the light receiver 720. In detail, the carrier 740 includes a first surface 740a and a second surface 740b opposite to the first surface 740a. The first surface 740a is used to carry the LED 770 to be detected. 783 is disposed on the second surface 740b, and has a reflective cavity 781 between the reflective layer 783 and the second surface 740b, and the light guiding element 784 has a light collecting end 784a, and the light collecting end 784a is coupled The reflective cavity 781 of the carrier disk 740. Among them, the reflective layer 783 is made of a material having a high reflection coefficient, and the material of the high reflection coefficient selected for the present embodiment is barium sulfate. Further, in other embodiments according to the present creation, the reflective layer 783 may also select a material such as silver, aluminum, or a Bragg mirror (DBR) structure or the like. The method for optical measurement by the carrying platform 740 of the sixth embodiment includes: placing a plurality of light emitting diodes 770 on the carrying platform 740; positioning the position of the light emitting diode 770; changing the light transmission of the carrying platform 740 The carrier 740 is divided into a first area 741 and a second area 742. The first area 741 covers one or several light emitting diodes 770, wherein the first area 741 is a light transmitting area and has a high The transmittance of the second region 742; and the light-emitting characteristics of the LED 770 disposed in the first region 741. The carrier 740 of the present embodiment includes a liquid crystal material, and the transmittance of the first region 741 and/or the second region 742 is changed by applying a voltage.

本實施例之發光二極體的光學檢測方法係先藉由掃描置放有該發光二極體770之承載台740的影像,以定位確認擴張膜780上的數個待檢測發光二極體770之位置後,藉由控制承載台740內液晶分子的排列方向,使涵蓋一個或一個以上待檢測的發光二極體770之區域下方的承載台740轉變成透光之第一區域741,而其餘未涵蓋發光二極體770之區域的液晶分子則不改變排列方向,而形成與該第一區域741具有不同透光率的該第二區域742。本實施例中,該第一區域741之透光率係高於該第二區域742。請參照第7C圖所示,接著以點測器790依序接觸每一個發光二極體770的正、負極775A、775B進行檢測時,待檢測的發光二極體770所發出的光線穿透第一區域741進入該反射腔781,光線藉由反射腔781及反射層783有效地反射,使光線導引至導光元件784之集光端784a收集並送入該收光器720中,再透過光偵測器730進行後續光學檢測。其中,檢測位在邊緣的發光二極體晶粒770時,因鄰近的其他發光二極體晶粒770反射所導致的環境差異,可藉由位在第一區域741周圍的第二區域742的反射加以補償,使得位在擴張膜780上的各個待檢測的發光二極體770具有相同或接近的檢測環境,避免在量測發光二極體770發光特性時,因發光二極體770的位置不同而造成量測誤差過大。 實施例七、八: The optical detection method of the light-emitting diode of the present embodiment firstly scans the image of the carrier 740 on which the light-emitting diode 770 is placed to position and confirm the plurality of light-emitting diodes 770 to be detected on the expanded film 780. After the position, by controlling the arrangement direction of the liquid crystal molecules in the carrier 740, the carrier 740 under the region covering one or more of the LEDs 770 to be detected is converted into the first region 741 of light transmission, and the rest The liquid crystal molecules not covering the region of the light-emitting diode 770 do not change the alignment direction, but form the second region 742 having a different light transmittance from the first region 741. In this embodiment, the light transmittance of the first region 741 is higher than the second region 742. Referring to FIG. 7C, when the positive and negative electrodes 775A and 775B of each of the light-emitting diodes 770 are sequentially contacted by the spot detector 790 for detection, the light emitted by the light-emitting diode 770 to be detected penetrates. A region 741 enters the reflective cavity 781, and the light is effectively reflected by the reflective cavity 781 and the reflective layer 783, and the light is guided to the light collecting end 784a of the light guiding component 784 to be collected and sent into the light receiver 720, and then transmitted. The photodetector 730 performs subsequent optical detection. Wherein, when detecting the LED 770 located at the edge, the environmental difference caused by the reflection of the adjacent LED dipoles 770 may be caused by the second region 742 located around the first region 741. The reflection is compensated so that the respective LEDs 770 to be detected located on the expansion film 780 have the same or close detection environment, avoiding the position of the LED 770 when measuring the illumination characteristics of the LED 770. The measurement error is too large due to the difference. Embodiments 7 and 8:

以下將配合第8A-8C圖說明根據本創作實施例七及八的發光二極體光學檢測裝置的示意圖。The schematic diagram of the light-emitting diode optical detecting apparatus according to the seventh and eighth embodiments of the present invention will be described below with reference to Figs. 8A-8C.

第8A圖揭示本創作實施例七的發光二極體光學檢測裝置800,大部分構件如實施例一所述包括一載具210、一收光器820以及一光偵測器830。其中,該載具210包含一承載台240,該承載台240設有一第一表面240a及相對於該第一表面240a之一第二表面240b,且該第一表面240a係用以承載待檢測的發光二極體270之一發光面271;該收光器820具有一收光端825及一出光端826,且該收光端825係朝向承載台240之第二表面240b設置,以收集該發光二極體270所發出的光線,並由該出光端826傳送至該光偵測器830;該光偵測器830耦接至該收光器820,以偵測該收光器820所收集到的光線。該發光二極體光學檢測裝置800另包含一波長轉換件850,該波長轉換件850係設於該待檢測發光二極體270之發光面271與該收光器820之出光端826之間。本實施例之該波長轉換元件850係設於收光器820的收光端825與承載台840之第二表面840b之間,且較佳地,該波長轉換元件850可拆裝地結合於該收光器820之收光端825。FIG. 8A illustrates a light-emitting diode optical detecting device 800 according to the seventh embodiment of the present invention. Most of the components include a carrier 210, a light receiver 820, and a photodetector 830 as described in the first embodiment. The carrier 210 includes a loading platform 240. The carrier 240 is provided with a first surface 240a and a second surface 240b opposite to the first surface 240a. The first surface 240a is used to carry the to-be-detected One light-emitting surface 271 of the light-emitting diode 270; the light-receiving end 820 has a light-receiving end 825 and a light-emitting end 826, and the light-receiving end 825 is disposed toward the second surface 240b of the carrying platform 240 to collect the light. The light emitted by the diode 270 is transmitted to the light detector 830. The light detector 830 is coupled to the light receiver 820 to detect the light collected by the light collector 820. The light. The light-emitting diode optical detecting device 800 further includes a wavelength conversion member 850 disposed between the light-emitting surface 271 of the light-emitting diode 270 to be detected and the light-emitting end 826 of the light receiver 820. The wavelength conversion component 850 of the embodiment is disposed between the light receiving end 825 of the light receiver 820 and the second surface 840b of the carrier 840, and preferably, the wavelength conversion component 850 is removably coupled to the The light receiving end 825 of the light receiver 820.

請參照第8B圖所示,此為本創作實施例八之發光二極體光學檢測裝置的示意圖,實施例八的發光二極體光學檢測裝置800’大致與實施例七之發光二極體光學檢測裝置800相同,具有一載具210、一收光器820、一光偵測器830及波長轉換件850,差異在於實施例八的波長轉換件850是設置在收光器820之出光端826,且較佳地,該波長轉換件850可拆裝地結合於該收光器820之出光端826。Please refer to FIG. 8B , which is a schematic diagram of the light-emitting diode optical detecting device of the eighth embodiment. The light-emitting diode optical detecting device 800 ′ of the eighth embodiment is substantially similar to the light-emitting diode optical body of the seventh embodiment. The detection device 800 is the same, and has a carrier 210, a light receiver 820, a light detector 830, and a wavelength conversion member 850. The difference is that the wavelength conversion member 850 of the eighth embodiment is disposed at the light output end 826 of the light receiver 820. Preferably, the wavelength conversion member 850 is detachably coupled to the light exit end 826 of the light receiver 820.

該波長轉換件850係使發光二極體270所發出具第一波長的光線(例如藍光),部分通過波長轉換元件850並被轉換成具第二波長的光線(例如黃光、紅光或綠光),並且具有第一、第二波長的光線混合以形成白光。具有該波長轉換元件850的發光二極體的光學檢測裝置800、800’,係能模擬發光二極體270在加入螢光粉及膠體封裝所形成之發光二極體封裝體的發光特性,藉由封裝前預先量測評估發光特性是否符合封裝後的規格,以達到提高客戶滿意度及降低客訴率等功效。The wavelength conversion member 850 is such that the light having the first wavelength emitted by the LED 270 (for example, blue light) is partially passed through the wavelength conversion element 850 and converted into light having a second wavelength (for example, yellow light, red light or green light). Light), and the light having the first and second wavelengths is mixed to form white light. The optical detecting device 800, 800' having the light-emitting diode of the wavelength converting element 850 can simulate the light-emitting characteristics of the light-emitting diode package formed by adding the phosphor powder and the colloidal package. It is estimated by pre-packaging to evaluate whether the luminescence characteristics meet the post-package specifications, so as to improve customer satisfaction and reduce customer complaint rate.

在上述實施例七、八中,波長轉換元件850包含螢光粉薄膜,且波長轉換元件850可視需要設計成片狀或板狀之可拆換形式,使發光二極體270所發出的第一波長光線在通過不同的波長轉換元件850後可獲得具不同第二波長的光線。此外,在一實施例中,波長轉換元件850包含具第一放射波長之一第一波長轉換件850A,以及具第二放射波長的一第二波長轉換件850B,該第一波長轉換件850A與該第二波長轉換件850B係可以被發光二極體270之放光所激發,且第一放射波長與第二放射波長不同。具體而言,該波長轉換元件850亦可以如第8C圖所示為一轉盤式結構,該波長轉換元件850包括有複數個具有不同放射波長的第一波長轉換件850A、第二波長轉換件850B、第三波長轉換件850C、第四波長轉換件850D、第五波長轉換件850E及第六波長轉換件850F,且該波長轉換元件850係可轉動已選擇所需的波長轉換件850對位結合於該收光器820的該收光端825或出光端826,使該波長轉換元件850可被發光二極體270所發出具第一波長的光線激發而產生具不同第二波長的光線。In the seventh and eighth embodiments, the wavelength conversion element 850 includes a phosphor powder film, and the wavelength conversion element 850 can be designed in a sheet or plate shape as needed, so that the light emitting diode 270 emits the first The wavelength light rays can obtain light having different second wavelengths after passing through different wavelength conversion elements 850. In addition, in an embodiment, the wavelength conversion element 850 includes a first wavelength conversion member 850A having a first emission wavelength, and a second wavelength conversion member 850B having a second emission wavelength, the first wavelength conversion member 850A and The second wavelength conversion member 850B can be excited by the light emission of the light emitting diode 270, and the first emission wavelength is different from the second emission wavelength. Specifically, the wavelength conversion component 850 can also be a turntable structure as shown in FIG. 8C. The wavelength conversion component 850 includes a plurality of first wavelength conversion components 850A and second wavelength conversion components 850B having different emission wavelengths. The third wavelength conversion member 850C, the fourth wavelength conversion member 850D, the fifth wavelength conversion member 850E, and the sixth wavelength conversion member 850F, and the wavelength conversion member 850 is rotatably selected to be selected by the wavelength conversion member 850. The light-receiving end 825 or the light-emitting end 826 of the light receiver 820 can cause the wavelength conversion element 850 to be excited by the light of the first wavelength emitted by the light-emitting diode 270 to generate light having different second wavelengths.

本實施例之發光二極體270係未封裝,例如為發光二極體晶片或晶粒,並透過波長轉換元件850以預先模擬發光二極體270封裝後放光特性。而第8C圖所示之波長轉換元件850包括有複數個具有不同放射波長的第一波長轉換件850A、第二波長轉換件850B及第三波長轉換件850C等,當欲模擬發光二極體270包含不同波長轉換件的封裝條件的放光特性時,僅需使相應的波長轉換件850A、850B、或850C等對位於出光端825或收光端826,不必拆裝及更換波長轉換件,以提高測試效率。The light-emitting diode 270 of the present embodiment is not packaged, for example, a light-emitting diode wafer or a crystal grain, and is transmitted through the wavelength conversion element 850 to simulate the light-emitting characteristics of the light-emitting diode 270 in advance. The wavelength conversion element 850 shown in FIG. 8C includes a plurality of first wavelength conversion members 850A, second wavelength conversion members 850B, and third wavelength conversion members 850C having different radiation wavelengths, etc., when the light-emitting diode 270 is to be simulated. When the light-emitting characteristics of the package conditions of the different wavelength conversion components are included, it is only necessary to make the corresponding wavelength conversion member 850A, 850B, or 850C or the like be located at the light-emitting end 825 or the light-receiving end 826, and it is not necessary to disassemble and replace the wavelength conversion member. Improve test efficiency.

此外,實施例七、八雖以實施例一所示的載具210例示說明,但載具210也可以根據本創作的實施例二至六所揭示的載具取代,在此不再贅述。 實施例九: In addition, the seventh embodiment and the eighth embodiment are illustrated by the carrier 210 shown in the first embodiment, but the carrier 210 may be replaced by the carrier disclosed in the second embodiment of the present invention, and details are not described herein again. Example 9:

以下將配合第9圖說明一種根據本創作實施例九的發光二極體光學檢測裝置的示意圖。A schematic diagram of a light-emitting diode optical detecting apparatus according to the ninth embodiment of the present invention will be described below with reference to FIG.

實施例九的發光二極體光學檢測裝置800″,其構造大抵與上述實施例七、八的發光二極體光學檢測裝置800、800′大致相同,主要差異在於本實施例的發光二極體光學檢測裝置800″的波長轉換元件850是設置於承載台240,波長轉換元件850可以結合於承載台240的第一表面240a或第二表面240b,舉例而言,當波長轉換元件850結合於第一表面240a時,使得發光二極體270之發光面271所發出具第一波長的光線(例如藍光),部分通過波長轉換元件850而被轉換成具第二波長的光線(例如黃光、紅光或綠光),進而在通過承載台240後,使收光器820可收集到具有第一、第二波長的光線混合的光(例如白光),然後再由光偵測器830進一步分析。本實施例之承載台240對於第一波長及第二波長的光線係具有高穿透度。The light-emitting diode optical detecting device 800" of the ninth embodiment is substantially the same as the light-emitting diode optical detecting device 800, 800' of the above-described seventh and eighth embodiments, and the main difference lies in the light-emitting diode of the present embodiment. The wavelength conversion component 850 of the optical detection device 800" is disposed on the carrier 240, and the wavelength conversion component 850 can be coupled to the first surface 240a or the second surface 240b of the carrier 240, for example, when the wavelength conversion component 850 is coupled to When a surface 240a is used, the light having the first wavelength emitted by the light-emitting surface 271 of the LED 270 is partially converted into a light having a second wavelength (for example, yellow light or red) by the wavelength conversion element 850. Light or green light, and then, after passing through the stage 240, the light receiver 820 can collect light (eg, white light) mixed with light of the first and second wavelengths, and then further analyzed by the light detector 830. The carrier 240 of the present embodiment has high transmittance for light rays of the first wavelength and the second wavelength.

波長轉換元件850如實施例七、八所述般包含螢光粉薄膜,此外,波長轉換元件850亦可以如第8C圖所示地選擇包含數個波長轉換件(850A~850F);載具210也可以根據本創作的實施例二至六所揭示的載具取代,在此不再贅述。 實施例十: The wavelength conversion element 850 includes a phosphor powder film as described in Embodiments 7 and 8. Further, the wavelength conversion element 850 may also include a plurality of wavelength conversion members (850A to 850F) as shown in FIG. 8C; the carrier 210 It can also be replaced by the carrier disclosed in Embodiments 2 to 6 of the present creation, and details are not described herein again. Example 10:

以下將配合第8B、10圖說明一種根據本創作實施例十的發光二極體光學檢測裝置的示意圖。A schematic diagram of a light-emitting diode optical detecting apparatus according to the tenth embodiment of the present invention will be described below with reference to FIGS. 8B and 10.

請先參照第8B圖所示,本實施例的發光二極體光學檢測裝置包括一如實施例八(第8B圖)所示的載具210、一收光器820以及一光偵測器830。載具210、收光器820及光偵測器830等各構件已如上述實施例八所述,惟本實施例的發光二極體光學檢測裝置另包含一導光元件884及一調整元件860,收光器820及光偵測器830係透過導光元件884互相耦接。本實施例的導光元件884係結合於收光器820之出光端826,導光元件884舉例為光纖等,且調整元件860較佳係可動地結合於該收光器820之出光端826。Referring to FIG. 8B, the LED detection device of the present embodiment includes a carrier 210, a light receiver 820, and a photodetector 830 as shown in Embodiment 8 (FIG. 8B). . The components of the carrier 210, the light receiver 820, and the photodetector 830 are as described in the above embodiment 8. The light-emitting diode optical detecting device of the embodiment further includes a light guiding component 884 and an adjusting component 860. The light receiver 820 and the light detector 830 are coupled to each other through the light guiding element 884. The light guiding component 884 of the embodiment is coupled to the light emitting end 826 of the light receiver 820. The light guiding component 884 is exemplified by an optical fiber or the like, and the adjusting component 860 is preferably movably coupled to the light emitting end 826 of the light receiver 820.

請另參照第10圖所示,該調整元件860包含一主體861、一第一開孔862、一第二開孔863、一第一調光件864及一第二調光件865,且該第一調光件864及該第二調光件865係分別結合於該第一開孔862及該第二開孔863中,該發光二極體的光學檢測裝置係可以透過該調整元件860調整由待測的發光二極體之放射光進入該光偵測器830的光強度。舉例而言,在一實施例中,該第一開孔862及該第二開孔863的尺寸不同,在另一實施例中,該第一調光件864及該第二調光件865係具有不同的透光率,以透過該些開孔862、863的大小或該些調光件864、865的透光率控制進入到光偵測器830的光量。本實施例之調整元件860之主體861是可轉動地結合於該收光器820之出光端826,以透過轉動該調整元件860的主體861,選擇性地將該第一開孔862或第二開孔863(即第一調光件864或第二調光件865)對位於該收光器820之出光端826,藉此改變由該收光器820透過導光元件884進入到該光偵測器830的光強度。另外,該調整元件860亦可以另設有數個開孔及數個調光件,該調整元件860的開孔及調光件的數目並不以本實施例為限。As shown in FIG. 10 , the adjusting component 860 includes a main body 861 , a first opening 862 , a second opening 863 , a first dimming member 864 , and a second dimming member 865 . The first dimming member 864 and the second dimming member 865 are respectively coupled to the first opening 862 and the second opening 863. The optical detecting device of the LED can be adjusted through the adjusting component 860. The intensity of light entering the photodetector 830 by the emitted light of the light emitting diode to be tested. For example, in an embodiment, the first opening 862 and the second opening 863 are different in size. In another embodiment, the first dimming member 864 and the second dimming member 865 are different. The light transmittance is controlled to control the amount of light entering the photodetector 830 through the sizes of the openings 862, 863 or the transmittance of the dimming members 864, 865. The main body 861 of the adjusting component 860 of the embodiment is rotatably coupled to the light emitting end 826 of the light receiver 820 to selectively rotate the first opening 862 or the second hole 862 by rotating the main body 861 of the adjusting component 860. The opening 863 (ie, the first dimming member 864 or the second dimming member 865) is located at the light exiting end 826 of the light receiver 820, thereby changing the light receiving device 820 through the light guiding member 884 to enter the optical detection. The light intensity of the detector 830. In addition, the adjusting component 860 can also be provided with a plurality of openings and a plurality of dimming members. The number of the opening and the dimming member of the adjusting component 860 is not limited to the embodiment.

除了透過可動地結合於該收光器820的調整元件860以外,另一實施例則藉由控制導光元件884與收光器820之出光端826的距離,以改變透過導光元件884進入光偵測器830的光強度。詳言之,在一實施例中,導光元件884具有一集光端884a,集光端884a係可移動地結合於收光器820之出光端826,使本實施例的發光二極體光學檢測裝置能夠透過改變集光端884a與該出光端826的距離,調整透過導光元件884輸入至光偵測器830的光量。In addition to the adjustment element 860 movably coupled to the light receiver 820, another embodiment changes the distance of the light guiding element 884 from the light exiting end 826 of the light receiver 820 to change the light transmitted through the light guiding element 884. The light intensity of the detector 830. In detail, in an embodiment, the light guiding element 884 has a light collecting end 884a, and the light collecting end 884a is movably coupled to the light emitting end 826 of the light receiver 820, so that the light emitting diode of the embodiment is optical. The detecting device can adjust the amount of light input to the photodetector 830 through the light guiding element 884 by changing the distance between the collecting end 884a and the light emitting end 826.

當使用本實施例之發光二極體光學檢測裝置量測不同發光二極體的光學特性時,由於不同的發光二極體之亮度有落差,為避免待測發光二極體的亮度超過光偵測器830所能讀取的極限值,在量測前可以透過轉動或移動調整元件860或導光元件884,調整後續進入到光偵測器830的光強度,藉此節省為量測不同亮度的樣品而需更換硬體設備或建立軟體參數的人力及時間成本,以達到增加機台利用率,並節省工程人員校正時間等功效。When the optical characteristics of the different light-emitting diodes are measured by using the light-emitting diode optical detecting device of the embodiment, the brightness of the light-emitting diodes is different from that of the light-emitting diodes. The limit value that can be read by the detector 830 can be adjusted by adjusting the light intensity of the subsequent light detector 830 by rotating or moving the adjusting component 860 or the light guiding component 884 before the measurement, thereby saving the measurement of different brightness. The sample needs to replace the hardware equipment or the labor and time cost of establishing the software parameters, so as to increase the utilization rate of the machine and save the engineering personnel's correction time.

雖然本創作已以較佳實施例揭露如上,然其並非用以限定本創作,任何所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可更動與組合上述各種實施例。Although the present invention has been disclosed in the above preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can change and combine the various implementations described above without departing from the spirit and scope of the present invention. example.

100‧‧‧習知發光二極體光學檢測裝置
200、800、800′、800″‧‧‧發光二極體光學檢測裝置
110、210、310、410‧‧‧載具
120、220、720、820‧‧‧收光器
125、225、725、825‧‧‧收光端
130、230、730、830‧‧‧光偵測器
140、240、340、440、540、640、740‧‧‧承載台
150、250、350、450‧‧‧支撐體
155‧‧‧真空孔
160A‧‧‧夾持內環
160B‧‧‧夾持外環
170、270、370、470、570、670、770‧‧‧發光二極體
175A、275A、375A、475A、575A、675A、775A‧‧‧正電極
175B、275B、375B、475B、575B、675B、775B‧‧‧負電極
180、280、380、480、580、680、780‧‧‧擴張膜
190、290、390、490、590、690、790‧‧‧點測器
240a、340a、440a、540a、640a、740a‧‧‧第一表面
240b、340b、440b、540b、640b、740b‧‧‧第二表面
250a、350a、450a‧‧‧側表面
350b、450b‧‧‧上表面
251、351、451‧‧‧凸部
255、355A‧‧‧第一真空孔
256‧‧‧隔牆
355B‧‧‧第二真空孔
260、360、460‧‧‧凹穴
262A、362A、462A‧‧‧夾持內環
262B、362B、462B‧‧‧夾持外環
271‧‧‧發光面
452‧‧‧本體
453‧‧‧延伸部
454‧‧‧間隙
455C‧‧‧第三真空孔
541、641、741‧‧‧第一區域
542、642、742‧‧‧第二區域
671‧‧‧第一發光二極體
672‧‧‧第二發光二極體
673‧‧‧第三發光二極體
781‧‧‧反射腔
783‧‧‧反射層
784、884‧‧‧導光元件
784a、884a‧‧‧集光端
826‧‧‧出光端
850‧‧‧波長轉換元件
850A‧‧‧第一波長轉換件
850B‧‧‧第二波長轉換件
850C‧‧‧第三波長轉換件
850D‧‧‧第四波長轉換件
850E‧‧‧第五波長轉換件
850F‧‧‧第六波長轉換件
860‧‧‧調整元件
861‧‧‧主體
862‧‧‧第一開孔
863‧‧‧第二開孔
864‧‧‧第一調光件
865‧‧‧第二調光件
d1‧‧‧走道
100‧‧‧Study light emitting diode optical detecting device
200, 800, 800', 800" ‧ ‧ light-emitting diode optical detecting device
110, 210, 310, 410‧‧‧ Vehicles
120, 220, 720, 820 ‧ ‧ light receiver
125, 225, 725, 825 ‧ ‧ receiving end
130, 230, 730, 830 ‧ ‧ optical detector
140, 240, 340, 440, 540, 640, 740‧‧‧
150, 250, 350, 450‧‧ ‧ support
155‧‧‧vacuum hole
160A‧‧‧Clamping inner ring
160B‧‧‧Clamp outer ring
170, 270, 370, 470, 570, 670, 770 ‧ ‧ light-emitting diodes
175A, 275A, 375A, 475A, 575A, 675A, 775A‧‧‧ positive electrodes
175B, 275B, 375B, 475B, 575B, 675B, 775B‧‧‧ negative electrode
180, 280, 380, 480, 580, 680, 780‧‧ ‧ expansion membrane
190, 290, 390, 490, 590, 690, 790‧‧ ‧ point detector
240a, 340a, 440a, 540a, 640a, 740a‧‧‧ first surface
240b, 340b, 440b, 540b, 640b, 740b‧‧‧ second surface
250a, 350a, 450a‧‧‧ side surface
350b, 450b‧‧‧ upper surface
251, 351, 451‧‧ ‧ convex
255, 355A‧‧‧ first vacuum hole
256‧‧‧ partition wall
355B‧‧‧second vacuum hole
260, 360, 460‧‧ ‧ pockets
262A, 362A, 462A‧‧‧ clamping inner ring
262B, 362B, 462B‧‧‧ clamping outer ring
271‧‧‧Lighting surface
452‧‧‧ Ontology
453‧‧‧Extension
454‧‧‧ gap
455C‧‧‧ third vacuum hole
541, 641, 741‧‧ first area
542, 642, 742‧‧‧ second area
671‧‧‧First Light Emitting Diode
672‧‧‧Second light-emitting diode
673‧‧‧ Third Light Emitting Diode
781‧‧‧Reflection chamber
783‧‧‧reflective layer
784, 884‧‧‧ Light guiding elements
784a, 884a‧‧ ‧ light end
826‧‧‧ light end
850‧‧‧wavelength conversion components
850A‧‧‧First Wavelength Conversion Parts
850B‧‧‧second wavelength converter
850C‧‧‧ Third Wavelength Conversion
850D‧‧‧4th wavelength conversion
850E‧‧‧ fifth wavelength conversion
850F‧‧‧ sixth wavelength converter
860‧‧‧Adjustment components
861‧‧‧ Subject
862‧‧‧First opening
863‧‧‧Second opening
864‧‧‧First dimming piece
865‧‧‧second dimming piece
D1‧‧‧ walkway

第1A~1B圖繪示的是習知一種發光二極體的光學檢測裝置剖面示意圖。1A-1B is a schematic cross-sectional view of an optical detecting device of a conventional light-emitting diode.

第2A圖繪示的是根據本創作實施例一的發光二極體光學檢測裝置。FIG. 2A is a diagram showing the light-emitting diode optical detecting device according to the first embodiment of the present invention.

第2B、2D、2E圖繪示的是根據本創作實施例一的發光二極體光學檢測裝置的載具剖面示意圖。2B, 2D, and 2E are schematic cross-sectional views of the carrier of the light-emitting diode optical detecting device according to the first embodiment of the present invention.

第2C圖繪示的是根據本創作實施例一的發光二極體光學檢測裝置的載具俯視圖。FIG. 2C is a plan view showing the carrier of the light-emitting diode optical detecting device according to the first embodiment of the present invention.

第3A~3B圖繪示的是根據本創作實施例二的發光二極體光學檢測裝置的載具剖面示意圖。3A-3B are schematic cross-sectional views of the carrier of the light-emitting diode optical detecting device according to the second embodiment of the present invention.

第4A~4B圖繪示的是根據本創作實施例三的發光二極體光學檢測裝置的載具剖面示意圖。4A-4B are schematic cross-sectional views of the carrier of the light-emitting diode optical detecting device according to the third embodiment of the present invention.

第5A~5B圖繪示的是根據本創作實施例四的發光二極體光學檢測裝置的承載台示意圖。5A-5B are schematic views of a carrying platform of the light-emitting diode optical detecting device according to the fourth embodiment of the present invention.

第6A~6B圖繪示的是根據本創作實施例五的發光二極體光學檢測裝置的承載台示意圖。6A-6B are schematic views of a carrying platform of the light-emitting diode optical detecting device according to the fifth embodiment of the present invention.

第7A~7C圖繪示的是根據本創作實施例六的發光二極體光學檢測裝置的承載台示意圖。7A to 7C are schematic views showing a carrying platform of the light-emitting diode optical detecting device according to the sixth embodiment of the present invention.

第8A~8C圖繪示的是根據本創作實施例七、八的發光二極體光學檢測裝置的剖面示意圖。8A-8C are schematic cross-sectional views of the light-emitting diode optical detecting device according to the seventh and eighth embodiments of the present invention.

第9圖繪示的是根據本創作實施例九的發光二極體光學檢測裝置的剖面示意圖。FIG. 9 is a cross-sectional view showing the light-emitting diode optical detecting device according to the ninth embodiment of the present invention.

第10圖繪示的是根據本創作實施例十的發光二極體光學檢測裝置的剖面示意圖。FIG. 10 is a cross-sectional view showing the light-emitting diode optical detecting device according to the tenth embodiment of the present invention.

200‧‧‧發光二極體檢測裝置 200‧‧‧Lighting diode detection device

210‧‧‧載具 210‧‧‧ Vehicles

220‧‧‧收光器 220‧‧‧ Receiver

225‧‧‧收光端 225‧‧‧ Receiving end

230‧‧‧光偵測器 230‧‧‧Photodetector

240‧‧‧承載台 240‧‧‧Loading station

250‧‧‧支撐體 250‧‧‧Support

251‧‧‧凸部 251‧‧‧ convex

255‧‧‧第一真空孔 255‧‧‧First vacuum hole

260‧‧‧凹穴 260‧‧ ‧ pocket

262A‧‧‧夾持內環 262A‧‧‧ clamping inner ring

262B‧‧‧夾持外環 262B‧‧‧Clamping outer ring

270‧‧‧發光二極體 270‧‧‧Lighting diode

275A‧‧‧正電極 275A‧‧‧ positive electrode

275B‧‧‧負電極 275B‧‧‧Negative electrode

280‧‧‧擴張膜 280‧‧‧Expanding membrane

290‧‧‧點測器 290‧‧‧ point detector

Claims (7)

一種發光二極體的光學檢測裝置,包括:一承載台,用以承載待檢測的發光二極體,該承載台之局部或全部區域之透光度具可調變性;一點測器,朝向該承載台設置,用以檢測發光二極體的電性;以及一收光器,朝向該承載台設置,以收集檢測時該發光二極體所發出的光線。 An optical detecting device for a light-emitting diode, comprising: a carrying platform for carrying a light-emitting diode to be detected, wherein a transmittance of a part or all of a region of the carrying platform is adjustable and denaturing; The carrying platform is configured to detect the electrical properties of the light emitting diode; and a light receiver is disposed toward the carrying platform to collect the light emitted by the light emitting diode during the detecting. 如申請專利範圍第1項所述的發光二極體的光學檢測裝置,該承載台包含一第一區域及一第二區域,該第一區域或/及該第二區域之透光度係藉由一物理量分別調變。 The optical detecting device of the light emitting diode according to claim 1, wherein the carrying platform comprises a first region and a second region, and the transmittance of the first region or/and the second region is It is modulated by a physical quantity. 如申請專利範圍第2項所述的發光二極體的光學檢測裝置,該第一區域的透光度高於該第二區域的透光度,且該第二區域係環繞該第一區域。 The optical detecting device of the light emitting diode according to the second aspect of the invention, wherein the transmittance of the first region is higher than the transmittance of the second region, and the second region surrounds the first region. 如申請專利範圍第2項所述的發光二極體的光學檢測裝置,該第一區域係涵蓋一個或一個以上待檢測的發光二極體。 An optical detecting device for a light-emitting diode according to claim 2, wherein the first region covers one or more light-emitting diodes to be detected. 如申請專利範圍第1項所述的發光二極體的光學檢測裝置,該承載台的材質包括液晶、電致變色物質或液態金屬。 The optical detecting device for a light-emitting diode according to claim 1, wherein the material of the carrying platform comprises a liquid crystal, an electrochromic substance or a liquid metal. 如申請專利範圍第1項所述的發光二極體的光學檢測裝置,該承載台設有一第一表面、與該第一表面相對的一第二表面及一反射層,該第一表面係用以承載該發光二極體,該反射層設於第二表面,且該反射層與該承載台之第二表面之間具有一反射腔。 The optical detecting device of the light emitting diode according to claim 1, wherein the carrying platform is provided with a first surface, a second surface opposite to the first surface, and a reflective layer, the first surface is used The light-emitting diode is disposed on the second surface, and the reflective layer has a reflective cavity between the second surface of the carrier. 如申請專利範圍第6項所述的發光二極體的光學檢測裝置,該反射層的材質包括銀、鋁或硫酸鋇,或者該反射層具有布拉格反射鏡結構(DBR)。The optical detecting device of the light-emitting diode according to claim 6, wherein the reflective layer is made of silver, aluminum or barium sulfate, or the reflective layer has a Bragg mirror structure (DBR).
TW105203327U 2016-03-10 2016-03-10 An optical measuring apparatus for light emitting diodes TWM530477U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611176B (en) * 2016-07-12 2018-01-11 旺矽科技股份有限公司 Supporting and light emitting module
TWI617129B (en) * 2017-05-03 2018-03-01 Solar cell measuring device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI611176B (en) * 2016-07-12 2018-01-11 旺矽科技股份有限公司 Supporting and light emitting module
TWI617129B (en) * 2017-05-03 2018-03-01 Solar cell measuring device

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