TWM530476U - Light emitting diode display - Google Patents

Abstract

A light emitting diode display including a substrate, a plurality of active devices, a plurality of light emitting diode chips, a anisotropic conductive film and a transparent protective layer is provided. The plurality of active devices are disposed on the substrate. The plurality of light emitting diode chips are disposed in an array above the substrate. The anisotropic conductive film is disposed between the plurality of light emitting diode chips and the substrate, such that each of the plurality of light emitting diode chips is electrically connected to the corresponding one of the plurality of active devices. The transparent protective layer is disposed on the plurality of light emitting diode chips.

Description

LED display

The present invention relates to a display, and more particularly to a light-emitting diode display.

The information and communication industry has become the mainstream industry today, especially the flat panel display is the communication interface between people and information, so its development is particularly important. Current technologies for flat panel displays include plasma display panels, liquid crystal displays, inorganic electroluminescent displays, light emitting diode displays, and vacuum fluorescent displays. Vacuum fluorescence display, field emission display, electro-chromic display, and the like.

In current LED display, the display effect is generally produced by a combination of a separately illuminated red photodiode wafer, a green photodiode wafer, and a blue LED wafer. The LEDs of different colors are generally disposed on the substrate, and the LEDs are electrically connected to the lines on the substrate by metal bumps or other conductive materials to the LEDs. The wafer is controlled.

However, the process involved in bonding the light-emitting diode wafer to the substrate is quite complicated, and thus the yield of the formed product is not high. In particular, in the case of a micro-light-emitting diode wafer, since the number of the light-emitting diode chips to be bonded is extremely large, the difficulty in alignment and bonding of the wiring on the wafer and the substrate is further improved. Therefore, it is impossible to produce a low-cost, high-quality, high-resolution display.

The present invention provides a light emitting diode display in which a light emitting diode wafer is attached to a substrate having an active element by an anisotropic conductive adhesive layer.

The novel LED display device comprises a substrate, a plurality of active components, a plurality of light emitting diode chips, an anisotropic conductive adhesive layer and a transparent protective layer. The plurality of active components are disposed on the substrate. The plurality of light emitting diode wafers are arranged in an array above the substrate. The anisotropic conductive adhesive layer is disposed between the plurality of light emitting diode wafers and the substrate to enable each of the plurality of light emitting diode wafers and the plurality of active components The corresponding counterpart is electrically connected. The transparent protective layer is disposed on the plurality of light emitting diode wafers.

In an embodiment of the novel light-emitting diode display of the present invention, the anisotropic conductive adhesive layer comprises a plurality of conductive particles and a colloid, wherein the conductive particles are distributed in the single layer array, for example. In the colloid.

In an embodiment of the novel light-emitting diode display of the present invention, the plurality of light-emitting diode chips are, for example, a combination of a red light-emitting diode chip, a green light-emitting diode chip, and a blue light-emitting diode chip.

In an embodiment of the novel light-emitting diode display, the plurality of light-emitting diode chips are, for example, white light diode chips or blue light diode chips.

In an embodiment of the light-emitting diode display of the present invention, a color filter is further disposed between the plurality of light-emitting diode wafers and the transparent protective layer.

In an embodiment of the novel light-emitting diode display of the present invention, the color filter has, for example, a red area, a green area, and a blue area, and the red area, the green area, and the blue area Each is located above a corresponding one of the plurality of light emitting diode wafers.

In an embodiment of the novel light-emitting diode display of the present invention, the substrate is a flexible substrate.

In an embodiment of the novel light-emitting diode display of the present invention, the substrate is a rigid substrate.

In an embodiment of the novel light-emitting diode display of the present invention, the plurality of active elements are, for example, metal oxide semiconductor transistors or thin film transistors.

In an embodiment of the novel light-emitting diode display of the present invention, each of the plurality of light-emitting diode wafers has a size of, for example, no more than 100 μm.

Based on the above, in the novel creation, the light-emitting diode wafer is attached to the substrate having the active component by the anisotropic conductive adhesive layer, so that the active component can be effectively electrically connected and avoided. The problem of a decrease in component yield due to alignment errors when metal bumps or other conductive materials are connected.

The above described features and advantages of the present invention will become more apparent and understood from the following description.

1 is a cross-sectional view of a light emitting diode display according to a first embodiment of the present invention. Referring to FIG. 1 , the LED display 10 basically includes a substrate 100 , an active device 102 , LEDs 104 a , 104 b and 104 c , an anisotropic conductive adhesive layer 106 , and a transparent protective layer 108 . In the present embodiment, the number of active components and light-emitting diode chips is merely an example, and is not intended to limit the novel creation. The light-emitting diode display 10 will be described in detail below.

The substrate 100 may be a substrate that is commonly used in general displays. When the light emitting diode 10 is a flexible display, the substrate 100 is a flexible substrate, which is, for example, a polyimide (PI) substrate or a polyethylene terephthalate (PET) substrate. When the light emitting diode 10 is a non-flexible display, the substrate 100 is a rigid substrate, which is, for example, a glass substrate or a germanium substrate. Further, the active device 102 is disposed on the substrate 100. The active device 102 is, for example, a thin film transistor or a metal oxide semiconductor transistor. For example, when the active device 102 is a thin film transistor, the substrate 100 may be a glass substrate or a polyimide substrate, and when the active device 102 is a metal oxide semiconductor transistor, the substrate 100 may be a germanium substrate. The active components 102 disposed on the substrate 100 can be electrically connected to each other by wires (not shown).

The LED wafers 104a, 104b, and 104c are arranged in an array above the substrate 100. In this embodiment, the LED wafer 104a is, for example, a red diode wafer, the LED wafer 104b is, for example, a green diode wafer, and the LED wafer 104c is, for example, a blue LED wafer. This novel creation is not limited to this. In other embodiments, the number of light-emitting diode wafers 104a, 104b, and 104c and the manner of displacement may be arbitrarily changed depending on actual needs. The LED wafers 104a, 104b, and 104c may have a generally well-known structure. For example, the LED wafers 104a, 104b, and 104c may be lateral light emitting diode wafers or vertical light emitting diode wafers. In particular, in the novel creation, since the LED chips 104a, 104b, and 104c can be independently controlled by the active device 102, the total number of the LED chips 104a, 104b, and 104c is active. The number of elements 102 is the same.

The anisotropic conductive paste layer 106 is disposed between the LED wafers 104a, 104b, and 104c and the substrate 100. The anisotropic conductive adhesive layer 106 includes conductive particles 106a and a colloid 106b. The conductive particles 106a are distributed in the colloid 106b. The conductive particles 106a are, for example, gold particles or composite conductive particles coated with gold particles with an insulating layer. In the present embodiment, the conductive particles 106a are distributed in the colloid 106b in a fixed manner in a single layer array, that is, the anisotropic conductive adhesive layer 106 is a so-called fixed array ACF. The anisotropic conductive adhesive layer 106 is used to adhere the light-emitting diode layers 104a, 104b, and 104c to the substrate 100, and the conductive particles 106a in the anisotropic conductive adhesive layer 106 may be combined with the light-emitting diode wafer 104a. The electrodes (not shown) of the 104b, 104c and the electrodes (not shown) of the active device 102 are bonded to electrically connect the LED chips 104a, 104b, 104c with the active device 102. In this way, each of the active components 102 can be used to individually control the LEDs electrically connected thereto.

In other embodiments, in the anisotropic conductive adhesive layer 106, the conductive particles 106a may also be distributed in the colloid 106b in a two-layer array or uniformly distributed in the colloid 106b, as long as the conductive particles 106a can emit light. The diode wafers 104a, 104b, and 104c may be electrically connected to the active device 102. In particular, when the conductive particles 106a are distributed in the colloid 106b in a fixed manner in a single layer array, since the conductive particles 106a are limited by their respective positions and are not arbitrarily distributed, adjacent illuminating can be further avoided. The diode wafers are electrically connected to each other to cause a short circuit.

The transparent protective layer 108 is disposed on the LED wafers 104a, 104b, and 104c to protect the LED wafers 104a, 104b, and 104c. The transparent protective layer 108 can be a protective layer commonly used in general displays.

In this embodiment, since the LED wafers 104a, 104b, and 104c are electrically connected to the active device 102 by the anisotropic conductive adhesive layer 106, rather than being previously connected to the LED wafers 104a, 104b. Metal bumps or other conductive materials of 104c are connected to the active device 102, thereby avoiding the problem of inaccurate alignment between the LED chips 104a, 104b, 104c and the active device 102, and in the light emitting diode When the wafers 104a, 104b, and 104c are micro-light-emitting diode wafers (the size is not more than 100 μm), the LED chips 104a, 104b, and 104c can be electrically connected to the active device 102 more accurately.

In addition, in the embodiment, the active component 102 is disposed on the substrate 100, and each of the active components 102 is electrically connected to the corresponding LED chip. Therefore, each of the active components 102 can be used to control each of the illuminations. Diode wafers to achieve the desired display.

In this embodiment, red, green, and blue light are emitted by different light emitting diode chips. However, in other embodiments, the same light emitting diode chip can be used with a color filter to emit red, green, and blue light. This will be explained below.

2 is a cross-sectional view of a light emitting diode display according to a second embodiment of the present invention. In the present embodiment, the same elements as those of the first embodiment will be denoted by the same reference numerals and will not be described herein.

Referring to FIG. 2 , the difference between the LED display 20 and the LED display 10 is that, in the LED display 20 , a plurality of the same LED arrays 200 are arranged on the substrate 100 in an array manner. The color filter 202 is disposed between the LED wafer 200 and the transparent protective layer 108.

In the present embodiment, the light emitting diode wafer 200 is, for example, a white light diode wafer or a blue light diode wafer. The color filter 202 has a red region 202a, a green region 202b, and a blue region 202c, and the red region 202a, the green region 202b, and the blue region 202c are each located above one of the light emitting diode wafers 200. In this way, when the light emitted by each of the LED chips 200 passes through the corresponding red region 202a, green region 202b and blue region 202c, respectively, the red region 202a, the green region 202b and the blue region 202c may respectively The white light or blue light emitted by the light emitting diode chip 200 is converted into red light, green light, and blue light.

Similarly, since each active device 102 is electrically connected to the corresponding LED 200, the desired display effect can be achieved by individually controlling whether each of the LED chips 200 is illuminated or not.

Although the present invention has been described above with reference to the embodiments, it is not intended to limit the present invention, and any person having ordinary skill in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.

10, 20‧‧‧Lighting diode display
100‧‧‧Substrate
102‧‧‧Active components
104a, 104b, 104c, 200‧‧‧Light Emitter Wafer
106‧‧‧ anisotropic conductive adhesive layer
106a‧‧‧Electrical particles
106b‧‧‧colloid
108‧‧‧Transparent protective layer
202‧‧‧Color filters
202a‧‧‧Red Area
202b‧‧‧Green area
202c‧‧‧Blue area

1 is a cross-sectional view of a light emitting diode display according to a first embodiment of the present invention. 2 is a cross-sectional view of a light emitting diode display according to a second embodiment of the present invention.

20‧‧‧Lighting diode display

100‧‧‧Substrate

102‧‧‧Active components

106‧‧‧ anisotropic conductive adhesive layer

106a‧‧‧Electrical particles

106b‧‧‧colloid

108‧‧‧Transparent protective layer

200‧‧‧Light Diode Wafer

202‧‧‧Color filters

202a‧‧‧Red Area

202b‧‧‧Green area

202c‧‧‧Blue area

Claims (10)

A light-emitting diode display comprising: a substrate; a plurality of active elements disposed on the substrate; a plurality of light-emitting diode wafers arranged in an array above the substrate; an anisotropic conductive adhesive layer disposed on Between the plurality of light emitting diode wafers and the substrate, to electrically connect each of the plurality of light emitting diode wafers with a corresponding one of the plurality of active components; and transparent protection a layer disposed on the plurality of light emitting diode wafers. The illuminating diode display of claim 1, wherein the anisotropic conductive adhesive layer comprises a plurality of conductive particles and a colloid, wherein the conductive particles are distributed in the colloid in a single layer array. . The illuminating diode display of claim 1, wherein the plurality of illuminating diode chips comprise a combination of a red photodiode wafer, a green photodiode wafer and a blue LED wafer. The illuminating diode display of claim 1, wherein the plurality of illuminating diode chips comprise a white photodiode wafer or a blue diopter wafer. The illuminating diode display of claim 4, further comprising a color filter disposed between the plurality of illuminating diode wafers and the transparent protective layer. The illuminating diode display of claim 5, wherein the color filter has a red area, a green area, and a blue area, and the red area, the green area, and the blue area Each is located above a corresponding one of the plurality of light emitting diode wafers. The illuminating diode display of claim 1, wherein the substrate is a flexible substrate. The illuminating diode display of claim 1, wherein the substrate is a rigid substrate. The illuminating diode display of claim 1, wherein the plurality of active elements comprise a metal oxide semiconductor transistor or a thin film transistor. The illuminating diode display of claim 1, wherein each of the plurality of illuminating diode wafers has a size of no more than 100 μm.