TWM553882U - Light emitting diode display apparatus - Google Patents
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Abstract
Description
本新型創作是有關於一種顯示裝置，且特別是有關於一種具有微型發光二極體元件的發光二極體顯示裝置。The present invention relates to a display device, and more particularly to a light-emitting diode display device having a miniature light-emitting diode element.
資訊通訊產業已成為現今的主流產業，特別是平面顯示器是人與資訊之間的溝通介面，因此其發展特別顯得重要。目前應用在平面顯示器的技術包括電漿顯示器（plasma display panel）、液晶顯示器（liquid crystal display）、無機電激發光顯示器（inorganic electroluminescent display）、發光二極體顯示器（light emitting diode display）、真空螢光顯示器（vacuum fluorescence display）、場致發射顯示器（field emission display）以及電變色顯示器（electro-chromic display）等等。The information and communication industry has become the mainstream industry today, especially the flat panel display is the communication interface between people and information, so its development is particularly important. Current technologies for flat panel displays include plasma display panels, liquid crystal displays, inorganic electroluminescent displays, light emitting diode displays, and vacuum fluorescent displays. Vacuum fluorescence display, field emission display, electro-chromic display, and the like.
在目前的微型發光二極體顯示器中，一般是將多個微型發光二極體元件與主動矩陣式基板電性連接，以達到各別操控微型發光二極體元件的目的。然而，上述的製程步驟較為繁雜，且微型發光二極體元件不易與主動矩陣式基板上的主動元件準確地連接。此外，對於被動式微型發光二極體顯示器來說，這些微型發光二極體元件通常是與印刷線路板上面的驅動線路電性連接。然而，印刷線路板通常無法具有良好的平坦度，因此會對顯示器的製造造成良率的影響。In the current miniature light-emitting diode display, a plurality of miniature light-emitting diode elements are generally electrically connected to the active matrix substrate to achieve the purpose of individually controlling the miniature light-emitting diode elements. However, the above-described process steps are complicated, and the micro-light-emitting diode elements are not easily connected to the active elements on the active matrix substrate. In addition, for passive miniature light-emitting diode displays, these miniature light-emitting diode elements are typically electrically connected to a drive line above the printed wiring board. However, printed wiring boards generally do not have good flatness and therefore have a yield impact on the manufacture of the display.
本新型創作提供一種發光二極體顯示裝置，其中線路結構層形成於基板上，微型發光二極體元件與線路結構層電性連接。The novel creation provides a light emitting diode display device in which a wiring structure layer is formed on a substrate, and the micro light emitting diode element is electrically connected to the circuit structure layer.
本新型創作的發光二極體顯示裝置包括基板、第一線路層、線路結構層以及多個微型發光二極體元件。所述第一線路層配置於所述基板上。所述線路結構層配置於所述基板上。所述線路結構層包括絕緣層、第二線路層以及導通孔。所述絕緣層配置於所述基板上，且覆蓋所述第一線路層。所述導通孔配置於所述絕緣層中，且連接所述第一線路層與所述第二線路層。所述多個微型發光二極體元件配置於所述線路結構層上，且與所第二線路層電性連接。The light-emitting diode display device of the present invention comprises a substrate, a first circuit layer, a circuit structure layer and a plurality of miniature light-emitting diode elements. The first circuit layer is disposed on the substrate. The circuit structure layer is disposed on the substrate. The circuit structure layer includes an insulation layer, a second circuit layer, and via holes. The insulating layer is disposed on the substrate and covers the first circuit layer. The via hole is disposed in the insulating layer and connects the first circuit layer and the second circuit layer. The plurality of micro LED components are disposed on the circuit structure layer and electrically connected to the second circuit layer.
在本新型創作的發光二極體顯示裝置的一實施例中，所述絕緣層例如為光成像介電層（Photo-Imageable Dielctric，PID）。In an embodiment of the light-emitting diode display device of the present invention, the insulating layer is, for example, a photo-imageable dielectric layer (PID).
在本新型創作的發光二極體顯示裝置的一實施例中，所述第二線路層例如內埋於所述絕緣層中，且與所述導通孔構成線路。In an embodiment of the light-emitting diode display device of the present invention, the second circuit layer is buried, for example, in the insulating layer, and forms a line with the via hole.
在本新型創作的發光二極體顯示裝置的一實施例中，所述絕緣層例如為非光成像介電層。In an embodiment of the novel light-emitting diode display device of the present invention, the insulating layer is, for example, a non-photographic dielectric layer.
在本新型創作的發光二極體顯示裝置的一實施例中，所述第二線路層例如配置於所述絕緣層的表面上。In an embodiment of the light-emitting diode display device of the present invention, the second circuit layer is disposed, for example, on a surface of the insulating layer.
在本新型創作的發光二極體顯示裝置的一實施例中，所述基板例如為玻璃基板或陶瓷基板。In an embodiment of the light-emitting diode display device of the present invention, the substrate is, for example, a glass substrate or a ceramic substrate.
在本新型創作的發光二極體顯示裝置的一實施例中，所述基板例如為高分子材料基板。In an embodiment of the light-emitting diode display device of the present invention, the substrate is, for example, a polymer material substrate.
在本新型創作的發光二極體顯示裝置的一實施例中，更包括導電膠層，其配置於所述多個微型發光二極體元件與所述線路結構層之間，以使所述多個微型發光二極體元件與所述線路結構層電性連接。In an embodiment of the light-emitting diode display device of the present invention, further comprising a conductive adhesive layer disposed between the plurality of miniature light-emitting diode elements and the circuit structure layer, so as to The miniature light emitting diode elements are electrically connected to the circuit structure layer.
在本新型創作的發光二極體顯示裝置的一實施例中，所述導電膠層例如異方性導電膠層。In an embodiment of the light-emitting diode display device of the present invention, the conductive adhesive layer is, for example, an anisotropic conductive adhesive layer.
在本新型創作的發光二極體顯示裝置的一實施例中，更包括多個金屬凸塊，其配置於所述多個微型發光二極體元件與所述線路結構層之間，以使所述多個微型發光二極體元件與所述線路結構層電性連接。In an embodiment of the light-emitting diode display device of the present invention, a plurality of metal bumps are further disposed between the plurality of micro-light-emitting diode elements and the circuit structure layer, so as to The plurality of micro-light emitting diode elements are electrically connected to the line structure layer.
基於上述，在本新型創作中，由於線路層直接設置於具有較佳平坦度的基板上，且微型發光二極體元件與線路結構層電性連接，因此線路層可穩固地貼附於基板上，且可形成為具有較小的線寬。且因此，微型發光二極體元件可精準地設置於基板上。此外，由於本新型創作的發光二極體顯示裝置屬於被動式發光二極體顯示裝置，因此可具有較簡單的製程步驟，且具有較低的製造成本。Based on the above, in the novel creation, since the circuit layer is directly disposed on the substrate having better flatness, and the micro LED component is electrically connected to the wiring structure layer, the circuit layer can be firmly attached to the substrate. And can be formed to have a smaller line width. Therefore, the micro-light emitting diode element can be accurately placed on the substrate. In addition, since the light-emitting diode display device created by the present invention belongs to a passive light-emitting diode display device, it can have a relatively simple manufacturing process and has a low manufacturing cost.
為讓本新型創作的上述特徵和優點能更明顯易懂，下文特舉實施例，並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will become more apparent and understood from the following description.
圖1為依據本新型創作的第一實施例所繪示的發光二極體顯示裝置的剖面示意圖。請參照圖1，發光二極體顯示裝置10包括基板100、線路層102、線路結構層104、微型發光二極體元件106a、106b、106c以及導電膠層108。在本實施例中，各元件的數量以及尺寸僅為示意的，其並非用以限定本新型創作。以下將對本實施例的發光二極體顯示裝置10進行詳細說明。1 is a cross-sectional view of a light emitting diode display device according to a first embodiment of the present invention. Referring to FIG. 1 , the LED display device 10 includes a substrate 100 , a circuit layer 102 , a line structure layer 104 , micro-light emitting diode elements 106 a , 106 b , 106 c and a conductive adhesive layer 108 . In the present embodiment, the number and size of the various elements are merely illustrative, and are not intended to limit the novel creation. The light-emitting diode display device 10 of the present embodiment will be described in detail below.
基板100可以是一般顯示裝置中常用的基板。在本實施例中，基板100為玻璃基板或陶瓷基板，即本領域中所稱的非可撓性基板或硬板，因此發光二極體顯示裝置10為非可撓性顯示裝置。線路層102配置於基板100上。線路層102例如為銅層。The substrate 100 may be a substrate commonly used in general display devices. In the present embodiment, the substrate 100 is a glass substrate or a ceramic substrate, that is, a non-flexible substrate or a hard plate as referred to in the art, and thus the light-emitting diode display device 10 is a non-flexible display device. The circuit layer 102 is disposed on the substrate 100. The wiring layer 102 is, for example, a copper layer.
線路結構層104配置於基板100上。線路結構層104包括絕緣層104a、線路層104b以及導通孔104c。絕緣層104a配置於基板100上，且覆蓋線路層102。導通孔104c配置於絕緣層104a中，且連接線路層102與線路層104b。在本實施例中，絕緣層104a為光成像介電層，線路層104b內埋於絕緣層104a中且與導通孔104c構成線路。The line structure layer 104 is disposed on the substrate 100. The wiring structure layer 104 includes an insulating layer 104a, a wiring layer 104b, and via holes 104c. The insulating layer 104a is disposed on the substrate 100 and covers the wiring layer 102. The via hole 104c is disposed in the insulating layer 104a, and connects the wiring layer 102 and the wiring layer 104b. In the present embodiment, the insulating layer 104a is a photo-imaging dielectric layer, and the wiring layer 104b is buried in the insulating layer 104a and forms a line with the via hole 104c.
微型發光二極體元件106a、106b、106c配置於線路結構層104上。微型發光二極體元件106a、106b、106c例如是微型發光二極體元件。在本實施例中，微型發光二極體元件106a例如是紅光二極體元件，微型發光二極體元件106b例如是綠光二極體元件，微型發光二極體元件106c例如是藍光二極體元件，但本新型創作不限於此。在其他實施例中，微型發光二極體元件106a、106b、106c的數量以及排量方式可視實際需求而做任意的變化。微型發光二極體元件106a、106b、106c可以具有一般熟知的結構。舉例來說，微型發光二極體元件106a、106b與106c可以是橫向發光二極體元件或垂直發光二極體元件。The micro-light-emitting diode elements 106a, 106b, 106c are disposed on the wiring structure layer 104. The micro-light-emitting diode elements 106a, 106b, 106c are, for example, micro-light emitting diode elements. In the present embodiment, the miniature light emitting diode element 106a is, for example, a red light diode element, the miniature light emitting diode element 106b is, for example, a green light diode element, and the miniature light emitting diode element 106c is, for example, a blue light diode. Components, but this new creation is not limited to this. In other embodiments, the number of micro-light-emitting diode elements 106a, 106b, 106c and the manner of displacement can be arbitrarily changed depending on actual needs. The miniature light emitting diode elements 106a, 106b, 106c can have a generally well known structure. For example, the miniature light emitting diode elements 106a, 106b, and 106c can be lateral light emitting diode elements or vertical light emitting diode elements.
導電膠層108配置於微型發光二極體元件106a、106b、106c與線路結構層104之間，以使微型發光二極體元件106a、106b、106c附著於線路結構層104上，並與線路結構層104的線路層104b電性連接。在本實施例中，導電膠層108例如為異方性導電膠層，其包括導電粒子108a與膠體108b，但本新型創作不限於此。在其他實施例中，導電膠層108也可以是任何一般常用的導電膠層。導電粒子108a分佈於膠體108b中。導電粒子108a例如是金屬粒子（例如金粒子）或是由絕緣層包覆金屬粒子所構成的複合導電粒子。The conductive adhesive layer 108 is disposed between the micro LED components 106a, 106b, 106c and the wiring structure layer 104 such that the micro LED components 106a, 106b, 106c are attached to the wiring structure layer 104, and the wiring structure The wiring layer 104b of the layer 104 is electrically connected. In the present embodiment, the conductive adhesive layer 108 is, for example, an anisotropic conductive adhesive layer including the conductive particles 108a and the colloid 108b, but the novel creation is not limited thereto. In other embodiments, the conductive adhesive layer 108 can also be any commonly used conductive adhesive layer. The conductive particles 108a are distributed in the colloid 108b. The conductive particles 108a are, for example, metal particles (for example, gold particles) or composite conductive particles composed of metal particles coated with an insulating layer.
導電膠層108除了用以使微型發光二極體元件106a、106b、106c附著於線路結構層104上之外，導電膠層108中的導電粒子108a可與微型發光二極體元件106a、106b、106c的電極（未繪示）以及線路結構層104的線路層104b接合，以使微型發光二極體元件106a、106b、106c能夠與線路結構層104的線路層104b電性連接。如此一來，即可藉由線路層102與線路層104b來控制微型發光二極體元件106a、106b、106c。因此，發光二極體顯示裝置10屬於被動式發光二極體顯示裝置。In addition to the conductive adhesive layer 108 for attaching the micro LED components 106a, 106b, 106c to the wiring structure layer 104, the conductive particles 108a in the conductive adhesive layer 108 may be combined with the micro LED components 106a, 106b, The electrodes (not shown) of 106c and the wiring layer 104b of the wiring structure layer 104 are bonded such that the micro-light emitting diode elements 106a, 106b, 106c can be electrically connected to the wiring layer 104b of the wiring structure layer 104. In this way, the micro LED elements 106a, 106b, 106c can be controlled by the wiring layer 102 and the wiring layer 104b. Therefore, the light-emitting diode display device 10 belongs to a passive light-emitting diode display device.
此外，在發光二極體顯示裝置10中，可選擇性地於微型發光二極體元件106a、106b、106c上配置透明保護層110，以保護微型發光二極體元件106a、106b、106c。透明保護層110可以是一般顯示器中常用的保護層。Further, in the light-emitting diode display device 10, the transparent protective layer 110 may be selectively disposed on the micro-light-emitting diode elements 106a, 106b, 106c to protect the micro-light-emitting diode elements 106a, 106b, 106c. The transparent protective layer 110 can be a protective layer commonly used in general displays.
在本實施例中，由於基板100為玻璃基板或陶瓷基板，其具有較佳的平坦度，因此線路層102可穩固地設置於基板100上，且可形成為具有較小的線寬。且因此，微型發光二極體元件106a、106b、106c可精準地設置於基板100上。此外，由於發光二極體顯示裝置10屬於被動式發光二極體顯示裝置，因此可具有較簡單的製程步驟，且具有較低的製造成本。In the present embodiment, since the substrate 100 is a glass substrate or a ceramic substrate, which has a good flatness, the wiring layer 102 can be stably disposed on the substrate 100 and can be formed to have a small line width. Therefore, the micro-light emitting diode elements 106a, 106b, 106c can be accurately disposed on the substrate 100. In addition, since the light-emitting diode display device 10 is a passive light-emitting diode display device, it can have a relatively simple process step and has a low manufacturing cost.
在第一實施例中，微型發光二極體元件106a、106b、106c藉由導電膠層108而附著於線路結構層104上並與其電性連接，但本新型創作不限於此。在其他實施例中，微型發光二極體元件106a、106b、106c亦可藉由其他方式與線路結構層104接合並電性連接。In the first embodiment, the micro-light-emitting diode elements 106a, 106b, 106c are attached to and electrically connected to the wiring structure layer 104 by the conductive adhesive layer 108, but the novel creation is not limited thereto. In other embodiments, the micro LED elements 106a, 106b, 106c can also be bonded and electrically connected to the wiring structure layer 104 by other means.
圖2為依據本新型創作的第二實施例所繪示的發光二極體顯示裝置的剖面示意圖。在本實施例中，與第一實施例相同的元件將以相同的元件符號表示，於此不另行描述。2 is a cross-sectional view of a light emitting diode display device according to a second embodiment of the present invention. In the present embodiment, the same elements as those of the first embodiment will be denoted by the same reference numerals and will not be described herein.
請參照圖2，發光二極體顯示裝置20與發光二極體顯示裝置10的差異在於：在發光二極體顯示裝置20中，微型發光二極體元件106a、106b、106c藉由金屬凸塊200而與線路層104b電性連接並接合於線路結構層104上。Referring to FIG. 2, the difference between the LED display device 20 and the LED display device 10 is that in the LED display device 20, the micro LED elements 106a, 106b, 106c are supported by metal bumps. 200 is electrically connected to the wiring layer 104b and bonded to the wiring structure layer 104.
在第一實施例與第二實施例中，僅配置一層線路結構層104，但本新型創作不限於此。在其他實施例中，可視實際需求而於基板100上堆疊多層線路結構層104，且使每一層線路結構層104彼此電性連接。In the first embodiment and the second embodiment, only one layer of the wiring structure layer 104 is disposed, but the novel creation is not limited thereto. In other embodiments, the multilayer wiring structure layer 104 is stacked on the substrate 100 according to actual needs, and each layer of the wiring structure layer 104 is electrically connected to each other.
以下將簡單地描述發光二極體顯示裝置10、20的製造方法。首先，於基板100上形成線路層102。然後，於基底100上形成覆蓋線路層102的絕緣層104a。由於絕緣層104a為光成像介電層，因此接著進行微影製程，以於絕緣層104a中形成開孔與溝槽。然後，於開孔與溝槽中形成導電層，其中位於開孔中的導電層即為導通孔104c，而溝槽中的導電層即為線路層104b。接著，於絕緣層104a上形成導電膠層108，或者於線路層104b的表面上形成凸塊200。然後，使微型發光二極體元件106a、106b、106c與導電膠層108或凸塊200接合。之後，於微型發光二極體元件106a、106b、106c上形成透明保護層110。A method of manufacturing the light-emitting diode display devices 10, 20 will be briefly described below. First, the wiring layer 102 is formed on the substrate 100. Then, an insulating layer 104a covering the wiring layer 102 is formed on the substrate 100. Since the insulating layer 104a is a photo-imaging dielectric layer, a lithography process is then performed to form openings and trenches in the insulating layer 104a. Then, a conductive layer is formed in the opening and the trench, wherein the conductive layer located in the opening is the via 104c, and the conductive layer in the trench is the wiring layer 104b. Next, a conductive paste layer 108 is formed on the insulating layer 104a, or a bump 200 is formed on the surface of the wiring layer 104b. Then, the micro-light emitting diode elements 106a, 106b, 106c are bonded to the conductive paste layer 108 or the bumps 200. Thereafter, a transparent protective layer 110 is formed on the micro-light-emitting diode elements 106a, 106b, and 106c.
圖3為依據本新型創作的第三實施例所繪示的發光二極體顯示裝置的剖面示意圖。在本實施例中，與第一實施例相同的元件將以相同的元件符號表示，於此不另行描述。3 is a cross-sectional view of a light emitting diode display device according to a third embodiment of the present invention. In the present embodiment, the same elements as those of the first embodiment will be denoted by the same reference numerals and will not be described herein.
請參照圖3，發光二極體顯示裝置30與發光二極體顯示裝置10的差異在於：在發光二極體顯示裝置30中，絕緣層104a為非光成像介電層，且線路層104b配置於絕緣層104a的表面上。非光成像介電層例如為味之素增層膜（Ajinomoto build-up film，ABF）。Referring to FIG. 3, the difference between the LED display device 30 and the LED display device 10 is that in the LED display device 30, the insulating layer 104a is a non-optical imaging dielectric layer, and the circuit layer 104b is disposed. On the surface of the insulating layer 104a. The non-optical imaging dielectric layer is, for example, an Ajinomoto build-up film (ABF).
以下將簡單地描述發光二極體顯示裝置30的製造方法。首先，於基板100上形成線路層102。然後，於基底100上形成覆蓋線路層102的絕緣層104a。由於絕緣層104a為非光成像介電層，因此接著進行鑽孔製程，以於絕緣層104a中形成開孔。然後，於絕緣層104a上形成圖案化罩幕層（例如圖案化光阻層），其中圖案化罩幕層暴露出待形成線路層104b的區域。接著，於開孔與圖案化罩幕層所暴露出的區域中形成導電層，其中位於開孔中的導電層即為導通孔104c，而形成於絕緣層104a上的導電層即為線路層104b。接著，移除圖案化罩幕層。然後，於絕緣層104a上形成導電膠層108。接著，使微型發光二極體元件106a、106b、106c與導電膠層108接合。之後，於微型發光二極體元件106a、106b、106c上形成透明保護層110。A method of manufacturing the light-emitting diode display device 30 will be briefly described below. First, the wiring layer 102 is formed on the substrate 100. Then, an insulating layer 104a covering the wiring layer 102 is formed on the substrate 100. Since the insulating layer 104a is a non-optical imaging dielectric layer, a drilling process is then performed to form openings in the insulating layer 104a. Then, a patterned mask layer (eg, a patterned photoresist layer) is formed on the insulating layer 104a, wherein the patterned mask layer exposes a region where the wiring layer 104b is to be formed. Then, a conductive layer is formed in the exposed area of the opening and the patterned mask layer, wherein the conductive layer located in the opening is the via 104c, and the conductive layer formed on the insulating layer 104a is the wiring layer 104b. . Next, the patterned mask layer is removed. Then, a conductive paste layer 108 is formed on the insulating layer 104a. Next, the micro-light-emitting diode elements 106a, 106b, and 106c are bonded to the conductive paste layer 108. Thereafter, a transparent protective layer 110 is formed on the micro-light-emitting diode elements 106a, 106b, and 106c.
與第二實施例相同，第三實施例中的導電膠層108亦可替換為凸塊200，使得微型發光二極體元件106a、106b、106c藉由凸塊200而接合於線路結構層104上並與其電性連接。As in the second embodiment, the conductive paste layer 108 in the third embodiment may also be replaced with the bumps 200 such that the micro LED components 106a, 106b, 106c are bonded to the wiring structure layer 104 by the bumps 200. And electrically connected to it.
此外，在上述各實施例中，基板100為非可撓性基板，因此發光二極體顯示裝置10、20、30為非可撓性顯示裝置，但本新型創作不限於此。在其他實施例中，基板100可為可撓性基板（或軟板），例如高分子材料基板。高分子材料基板可以是聚醯亞胺（polyimide，PI）基板、聚苯二甲酸乙二酯（polyethylene terephthalate，PET）基板或聚萘二甲酸乙二醇酯（polyethylene naphthalate，PEN）基板。Further, in each of the above embodiments, since the substrate 100 is a non-flexible substrate, the light-emitting diode display devices 10, 20, and 30 are non-flexible display devices, but the present invention is not limited thereto. In other embodiments, the substrate 100 can be a flexible substrate (or a flexible board), such as a polymeric substrate. The polymer material substrate may be a polyimide (PI) substrate, a polyethylene terephthalate (PET) substrate or a polyethylene naphthalate (PEN) substrate.
以下將以發光二極體顯示裝置10的結構為例來簡單地描述當基板100為可撓性基板時的發光二極體顯示裝置的製造方法。類似的製造方法亦可用以製造具有發光二極體顯示裝置20、30的結構的發光二極體顯示裝置。首先，於承載板（例如為玻璃承載板）上形成具有可撓性的基板100，其中承載板與基板100之間可形成可分離層（lift-off layer）。然後，於基板100上形成線路層102。接著，於基底100上形成覆蓋線路層102的絕緣層104a。由於絕緣層104a為光成像介電層，因此接著進行微影製程，以於絕緣層104a中形成開孔與溝槽。然後，於開孔與溝槽中形成導電層，其中位於開孔中的導電層即為導通孔104c，而溝槽中的導電層即為線路層104b。接著，於絕緣層104a上形成導電膠層108。然後，使微型發光二極體元件106a、106b、106c與導電膠層108接合。接著，於微型發光二極體元件106a、106b、106c上形成透明保護層110。之後，將基板100與承載板分離（lift off）。Hereinafter, a method of manufacturing the light-emitting diode display device when the substrate 100 is a flexible substrate will be briefly described by taking the structure of the light-emitting diode display device 10 as an example. A similar manufacturing method can also be used to fabricate a light-emitting diode display device having the structure of the light-emitting diode display devices 20, 30. First, a flexible substrate 100 is formed on a carrier board (for example, a glass carrier board), and a lift-off layer may be formed between the carrier board and the substrate 100. Then, the wiring layer 102 is formed on the substrate 100. Next, an insulating layer 104a covering the wiring layer 102 is formed on the substrate 100. Since the insulating layer 104a is a photo-imaging dielectric layer, a lithography process is then performed to form openings and trenches in the insulating layer 104a. Then, a conductive layer is formed in the opening and the trench, wherein the conductive layer located in the opening is the via 104c, and the conductive layer in the trench is the wiring layer 104b. Next, a conductive paste layer 108 is formed on the insulating layer 104a. Then, the micro-light emitting diode elements 106a, 106b, 106c are bonded to the conductive paste layer 108. Next, a transparent protective layer 110 is formed on the micro-light-emitting diode elements 106a, 106b, and 106c. Thereafter, the substrate 100 is lifted off from the carrier sheet.
在上述製造過程中，由於先將具有可撓性的基板100形成於承載板上，因此可使基板100具有較佳的平坦度，使得線路層102可穩固地設置於基板100上，且可形成為具有較小的線寬。且因此，微型發光二極體元件106a、106b、106c可精準地設置於基板100上。In the above manufacturing process, since the flexible substrate 100 is first formed on the carrier board, the substrate 100 can have a better flatness, so that the circuit layer 102 can be stably disposed on the substrate 100 and can be formed. To have a smaller line width. Therefore, the micro-light emitting diode elements 106a, 106b, 106c can be accurately disposed on the substrate 100.
雖然本新型創作已以實施例揭露如上，然其並非用以限定本新型創作，任何所屬技術領域中具有通常知識者，在不脫離本新型創作的精神和範圍內，當可作些許的更動與潤飾，故本新型創作的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.
10、20、30‧‧‧發光二極體顯示裝置
100‧‧‧基板
102、104b‧‧‧線路層
104‧‧‧線路結構層
104a‧‧‧絕緣層
104c‧‧‧導通孔
106a、106b、106c‧‧‧微型發光二極體元件
108‧‧‧導電膠層
108a‧‧‧導電粒子
108b‧‧‧膠體
110‧‧‧透明保護層
200‧‧‧金屬凸塊10, 20, 30‧‧‧Lighting diode display device
100‧‧‧Substrate
102, 104b‧‧‧ circuit layer
104‧‧‧Line structure layer
104a‧‧‧Insulation
104c‧‧‧through hole
106a, 106b, 106c‧‧‧ miniature light-emitting diode components
108‧‧‧Electrical adhesive layer
108a‧‧‧Electrical particles
108b‧‧‧colloid
110‧‧‧Transparent protective layer
200‧‧‧Metal bumps
圖1為依據本新型創作的第一實施例所繪示的發光二極體顯示裝置的剖面示意圖。 圖2為依據本新型創作的第二實施例所繪示的發光二極體顯示裝置的剖面示意圖。 圖3為依據本新型創作的第三實施例所繪示的發光二極體顯示裝置的剖面示意圖。1 is a cross-sectional view of a light emitting diode display device according to a first embodiment of the present invention. 2 is a cross-sectional view of a light emitting diode display device according to a second embodiment of the present invention. 3 is a cross-sectional view of a light emitting diode display device according to a third embodiment of the present invention.
10‧‧‧發光二極體顯示裝置 10‧‧‧Lighting diode display device
100‧‧‧基板 100‧‧‧Substrate
102、104b‧‧‧線路層 102, 104b‧‧‧ circuit layer
104‧‧‧線路結構層 104‧‧‧Line structure layer
104a‧‧‧絕緣層 104a‧‧‧Insulation
104c‧‧‧導通孔 104c‧‧‧through hole
106a、106b、106c‧‧‧微型發光二極體元件 106a, 106b, 106c‧‧‧ miniature light-emitting diode components
108‧‧‧導電膠層 108‧‧‧Electrical adhesive layer
108a‧‧‧導電粒子 108a‧‧‧Electrical particles
108b‧‧‧膠體 108b‧‧‧colloid
110‧‧‧透明保護層 110‧‧‧Transparent protective layer
Claims (10)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106211858U TWM553882U (en) | 2017-08-10 | 2017-08-10 | Light emitting diode display apparatus |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106211858U TWM553882U (en) | 2017-08-10 | 2017-08-10 | Light emitting diode display apparatus |
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| TWM553882U true TWM553882U (en) | 2018-01-01 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10802637B1 (en) | 2019-05-14 | 2020-10-13 | Unimicron Technology Corp. | Touch-sensing display panel and method of manufacturing the same |
| CN113394321A (en) * | 2020-03-13 | 2021-09-14 | 陈冠宇 | Light emitting device |
| TWI836755B (en) * | 2022-11-29 | 2024-03-21 | 友達光電股份有限公司 | Display structure and method of manufacturing the same |
-
2017
- 2017-08-10 TW TW106211858U patent/TWM553882U/en unknown
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10802637B1 (en) | 2019-05-14 | 2020-10-13 | Unimicron Technology Corp. | Touch-sensing display panel and method of manufacturing the same |
| CN113394321A (en) * | 2020-03-13 | 2021-09-14 | 陈冠宇 | Light emitting device |
| CN113394321B (en) * | 2020-03-13 | 2024-05-24 | 陈冠宇 | Light emitting device |
| TWI836755B (en) * | 2022-11-29 | 2024-03-21 | 友達光電股份有限公司 | Display structure and method of manufacturing the same |
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