TWM529921U - Anti-sulfurization memory storage device - Google Patents

Description

Anti-vulcanization memory storage device

The present invention relates to a memory storage device, and more particularly to a memory storage device resistant to vulcanization.

The memory device is one of the main components of the electronic device, and can store or temporarily store digital data on the electronic device. The general memory device can be divided into Unbuffered Dual Inlined Memory Module (UDIMM) and Registered Dual Inlined Memory Module (RDIMM). ) and the Small Outline Dual Inlined Memory Module (SODIMM). Regardless of the memory device, it includes a PCB, at least one volatile memory unit, and a plurality of passive components, wherein the volatile memory unit and the passive component are placed on the PCB, and the passive component is used. To control the amount of current transmitted by the host. Under normal use, the life of a memory module can last for five to ten years, and even more than ten years.

Due to the popularization of electronic devices, the location of the electronic devices is likely to be located outdoors, so that the probability of the compounds or water molecules in the air contacting the memory device is greatly increased, resulting in a shortened life of the memory device. For example, the resistance of current memory devices contains silver. When it comes into contact with sulfur molecules in the air, the original silver-containing conductive layer will chemically produce silver sulfide, making this conduction. The layer gradually becomes an insulator, and finally the current will not pass through the resistor and the memory device can no longer be used. The schematic diagram of the silver sulfide can be referred to FIG. Or, when there is too much water vapor in the air, the passive components on the memory device may be wet and unusable.

Looking at the above, the creators of this creation have been painstakingly researching, thinking and designing a memory storage device resistant to vulcanization for many years to improve the lack of existing technology and to enhance the implementation and utilization of the industry.

In view of the above-mentioned problems of the prior art, it is an object of the present invention to provide a memory storage device resistant to vulcanization to solve the above problems.

Based on the above objects, the present invention provides a vulcanization resistant memory storage device comprising a connection interface unit, a plurality of volatile memory units, and a printed circuit board. The connection interface unit can be coupled to a host system. The printed circuit board may comprise a plurality of anti-vulcanization passive components and a protective film, and the plurality of anti-vulcanization passive components may be used to control and conduct a current to the plurality of volatile memory cells, and the protective film may be used to cover the printed circuit board, wherein the plurality of The anti-vulcanization passive component may comprise a resistance to vulcanization resistance and a resistance to vulcanization and exclusion.

Preferably, one of the anti-vulcanization resistors has an optimum resistance value of 240 ohms.

Preferably, the error value of the resistance value of the anti-vulcanization resistor is within a range of 5% above 240 ohms.

Preferably, the error value of the resistance value of the anti-vulcanization resistor is within a range of 3% above 240 ohms.

Preferably, the error value of the resistance value of the anti-vulcanization resistor is in the range of 1% below 240 ohms.

Preferably, one of the resistance to vulcanization is a minimum resistance of 15 ohms.

Preferably, one of the highest resistance to vulcanization is 39 ohms.

Preferably, the connection interface unit can be a gold finger, and the thickness of the gold finger is between 20 and 30 microns.

Preferably, the connection interface unit can be a gold finger, and the thickness of the gold finger is between 35 and 45 microns.

In view of the above, the vulcanization resistant memory storage device of the present invention may have one or more of the following advantages:

(1) The anti-vulcanization memory storage device of the present invention prevents the passive component from chemically reacting with a compound in the air, thereby prolonging the life of the memory storage device

(2) The protective film of the anti-vulcanization memory storage device of the present invention has the functions of moisture proof, dustproof, and antifouling.

(3) The connection interface unit of the anti-vulcanization memory storage device of the present invention has the characteristics of wear resistance and plugging resistance, and can make the signal transmission more stable.

(4) The error value of the resistance of the anti-vulcanization memory storage device of the present invention is reduced to about 1%, so that one of the currents flowing through the resistor can be made more precise.

In order to make the above-mentioned objects, technical features, and gains after actual implementation more obvious, a more detailed description will be given below with reference to the corresponding drawings in the preferred embodiments.

In order to understand the creative characteristics, content and advantages of this creation and the effects that can be achieved by the examiner, the author will use the drawings in detail and explain the following in the form of the examples, and the drawings used therein The subject matter is only for the purpose of illustration and supplementary instructions. It is not necessarily the true proportion and precise configuration after the implementation of the creation. Therefore, the proportions and configuration relationships of the attached drawings should not be interpreted or limited in the actual implementation scope.

The advantages, features, and technical methods of the present invention will be more readily understood by referring to the exemplary embodiments and the accompanying drawings, and the present invention can be implemented in various forms and should not be construed as being limited to The stated embodiments, to the contrary, the embodiments of the present invention will provide a more thorough and complete and complete disclosure of the scope of the present invention, and the present invention will only be attached. The scope of the patent application is defined.

Please refer to FIG. 2 and FIG. 3, which are front and rear views of the anti-vulcanization memory storage device of the present invention. In the present embodiment, the vulcanization-resistant memory storage device 100 is exemplified by a SODIMM, which may include a connection interface unit 10, a plurality of volatile memory cells 20, and a printed circuit board 30. The plurality of volatile memory cells 20 may be a plurality of memory particles, and the connection interface unit 10 may be a gold finger, wherein the plurality of volatile memory cells 20 and the connection interface unit 10 are located on the printed circuit board 30. .

It is worth mentioning that the above-mentioned memory storage device is implemented by using SODIMM as an example, but not limited thereto, ECC Unbuffered Dual In-Line Memory Module (ECC UDIMM), ECC Small Outline Dual In-Line Memory can also be used. Modules, Load Reduced DIMMs (LRDIMMs), UDIMMs, and RDIMMs are used as examples.

As shown in the figure, the connection interface unit 10 can be coupled to a host system, which is coupled to insert the connection interface unit 10 into a memory slot on the motherboard of the host system to perform power or data. Transfer. The thickness of the connection interface unit 10 may be between 20 and 30 micrometers, and preferably, the thickness of the connection interface unit 10 may be between 35 and 45 micrometers for wear resistance and insertion resistance. Pull out the function.

In addition, the printed circuit board 30 includes a plurality of anti-vulcanization passive components 31 and a protective film 32. The plurality of anti-vulcanization passive components 31 may include a vulcanization resistance resistor 311 and a sulfur suppression resistance exclusion 312, which may be used to control and conduct A current is supplied to the volatile memory unit 20, wherein the current is provided by the host system through the connection interface unit 10.

The protective film 32 is used to cover the printed circuit board 30. It is further illustrated that the protective film 32 can be overlaid on the printed circuit board 30 by a conformal coating technique to provide moisture, dust, stain and adhesion resistance to components on the printed circuit board 30. .

In one embodiment, when the anti-vulcanization passive component 31 is a vulcanization resistant resistor 311, at a temperature of 25 degrees C, the optimum resistance value of one of the anti-vulcanization resistors 311 is 240 ohms, and the resistance value of the anti-vulcanization resistor 311 is obtained. The error value is within 5% of the range above 240 ohms.

In a preferred embodiment, when the anti-vulcanization passive component 31 is a vulcanization resistant resistor 311, at a temperature of 25 degrees C, one of the anti-vulcanization resistors 311 has an optimum resistance value of 240 ohms and is resistant to vulcanization resistance 311. The error value of the resistance value is within 3% of the range above 240 ohms.

In a preferred embodiment, when the anti-vulcanization passive component 31 is a vulcanization resistant resistor 311, at a temperature of 25 degrees C, one of the anti-vulcanization resistors 311 has an optimum resistance value of 240 ohms and is resistant to the vulcanization resistance 311. The error value of the resistance value is within 1% of the range above 240 ohms.

In a preferred embodiment, when the anti-vulcanization passive component 31 is an anti-vulcanization exclusion 312, at a temperature of 25 degrees C, the lowest resistance value of one of the anti-vulcanization exclusion 312 is 15 ohms and its highest resistance value. It is 39 ohms, and this anti-vulcanization exclusion 312 system contains four identical resistors. Further, the size of the anti-vulcanization exclusion 312 may be 8P4R or 4P2R. In the present embodiment, the number of four resistors in the anti-vulcanization exclusion 312 is only an example, and is not limited thereto. In practical applications, one of the plurality of resistors is designed to be resistant to the sulfurization row. Resistance.

It is worth mentioning that the anti-vulcanization memory storage device of the present invention adopts a sulfur resistance resistance or a sulfurization resistance exclusion with extremely low error value, which can effectively prevent a large current from flowing through the memory storage device. This in turn causes damage to the memory storage device.

It can be known from the above that the anti-vulcanization memory storage device of the present invention uses the anti-vulcanization passive component to replace the traditional passive component, and uses the protective film to enhance the dustproof and waterproof effect, thereby effectively maintaining the memory storage device. Conductivity, so it can effectively extend the service life.

The embodiments described above are only for explaining the technical idea and characteristics of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and implement them according to the scope of the patent. That is, the equivalent changes or modifications made by the people in accordance with the spirit revealed by this creation should still be covered by the scope of the patent of this creation.

100‧‧‧ memory storage device
10‧‧‧Connecting interface unit
20‧‧‧ volatile memory unit
30‧‧‧Printed circuit board
31‧‧‧Anti-vulcanization passive components
311‧‧‧Resistance resistance
312‧‧‧Anti-sulfurization
32‧‧‧Protective film

Figure 1 is a schematic diagram of the production of silver sulfide by passive components.

Figure 2 is a front elevational view of the vulcanization resistant memory storage device of the present invention.

Figure 3 is a rear elevational view of the vulcanization resistant memory storage device of the present invention.

100‧‧‧ memory storage device

10‧‧‧Connecting interface unit

20‧‧‧ volatile memory unit

30‧‧‧Printed circuit board

31‧‧‧Anti-vulcanization passive components

311‧‧‧Resistance resistance

312‧‧‧Anti-sulfurization

32‧‧‧Protective film

Claims (9)

A vulcanization-resistant memory storage device comprising: a connection interface unit for coupling to a host system; a plurality of volatile memory units; and a printed circuit board comprising a plurality of anti-vulcanization passive components and a protective film The plurality of anti-vulcanization passive components are used to control and conduct a current to the plurality of volatile memory cells, the protective film is used to cover the printed circuit board; wherein the plurality of anti-vulcanization passive components comprise a primary antibody Vulcanization resistance and primary resistance vulcanization and exclusion. The memory storage device of claim 1, wherein the one of the anti-vulcanization resistors has an optimum resistance value of 240 ohms. The memory storage device of claim 1, wherein the resistance value of the anti-vulcanization resistor is within a range of 5% above 240 ohms. The memory storage device of claim 1, wherein the resistance value of the anti-vulcanization resistor is within a range of 3% above 240 ohms. The memory storage device of claim 1, wherein the resistance value of the anti-vulcanization resistance is within a range of 1% below 240 ohms. The memory storage device of claim 1, wherein the one of the resistance to vulcanization is a minimum resistance value of 15 ohms. The memory storage device of claim 1, wherein the highest resistance value of the anti-vulcanization exclusion is 39 ohms. The memory storage device of claim 1, wherein the connection interface unit is a gold finger, and the gold finger has a thickness of 20 to 30 micrometers. The memory storage device of claim 1, wherein the connection interface unit is a gold finger, and the gold finger has a thickness of 35 to 45 micrometers.