CN105931663B - The memory storage device of sulfuration resistant - Google Patents
The memory storage device of sulfuration resistant Download PDFInfo
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- CN105931663B CN105931663B CN201610348460.2A CN201610348460A CN105931663B CN 105931663 B CN105931663 B CN 105931663B CN 201610348460 A CN201610348460 A CN 201610348460A CN 105931663 B CN105931663 B CN 105931663B
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- Prior art keywords
- sulfuration resistant
- storage device
- memory storage
- resistance
- sulfuration
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
Abstract
The invention discloses a kind of memory storage devices of sulfuration resistant, and it includes a connecting interface unit, multiple volatile memory cells and a printed circuit boards.Connecting interface unit can be used to be coupled to a host system.Printed circuit board may include multiple sulfuration resistant passive components and a protective film; multiple sulfuration resistant passive components can be used to control and conduct an electric current to multiple volatile memory cells; protective film can be used to cover printed circuit board, and plurality of sulfuration resistant passive component may include a sulfuration resistant resistance and a sulfuration resistant exclusion.
Description
Technical field
The present invention about a kind of memory storage device, in particular to it is a kind of can sulfuration resistant memory storage device.
Background technique
Memory device is the primary clustering on electronic device, can store or keep in the digital number on electronic device
According to, general memory device can divide into Unbuffered Dual Inlined Memory Module (UDIMM),
Registered Dual Inlined Memory Module (RDIMM) and Small Outline Dual Inlined
Memory Module(SODIMM).Regardless of being which kind of memory device, wherein all including a PCB, at least a volatile memory
Unit and multiple passive components, wherein volatile memory cell and passive component are placed on PCB, and passive component be then for
Control the size of current from host transmission.And the normal use the case where under, the service life of memory modules can maintain five to
10 years, what is more, also it is found almost everywhere within 10 years or more.
Due to the universalness of current electronic device, the place of setting is particularly likely that positioned at outdoor place, makes to have leisure
The probability that compound or hydrone in gas touch memory device increases, and causes the reduced lifetime of memory device.Citing
For, the resistance on memory device contains the composition of silver at present, when it is touched with the sulfur molecule in air, then original to contain
The conducting shell of silver will chemically react and generate silver sulfide, so that this conducting shell becomes an insulator gradually, and will finally lead
This resistance can not be passed through and use this memory device can not again by sending a telegraph stream, and the schematic diagram of this silver sulfide can refer to Fig. 1.And or
Person, when the steam in air is excessive, it is also possible to the passive component on memory device be caused to make moist and be not available.
Summary of the invention
The problem of in view of above-mentioned prior art, the object of the invention is to provide a kind of memory storage dress of sulfuration resistant
It sets, more than solving the problems, such as.
Based on above-mentioned purpose, the present invention provides a kind of memory storage device of sulfuration resistant, it includes a connecting interface unit,
Multiple volatile memory cells and a printed circuit board.Connecting interface unit can be used to be coupled to a host system.Printing electricity
Road plate may include multiple sulfuration resistant passive components and a protective film, and multiple sulfuration resistant passive components can be used to control and conduct one
Electric current is to multiple volatile memory cells, and protective film can be used to cover printed circuit board, and plurality of sulfuration resistant passive component can
Include a sulfuration resistant resistance and a sulfuration resistant exclusion.
Preferably, an optimum resistance value of sulfuration resistant resistance is 240 ohm.
Preferably, the error amount of the resistance value of sulfuration resistant resistance is in 240 ohm of 5% section up and down.
Preferably, the error amount of the resistance value of sulfuration resistant resistance is in 240 ohm of 3% section up and down.
Preferably, the error amount of the resistance value of sulfuration resistant resistance is in 240 ohm of 1% section up and down.
Preferably, a lowest resistance value of sulfuration resistant exclusion is 15 ohm.
Preferably, a highest resistance of sulfuration resistant exclusion is 39 ohm.
Preferably, connecting interface unit can be golden finger, and the thickness of golden finger is between 20 to 30 microns.
Preferably, connecting interface unit can be golden finger, and the thickness of golden finger is between 35 to 45 microns.
From the above, the memory storage device of sulfuration resistant under this invention can have the advantages that one or more are following:
(1) memory storage device of sulfuration resistant of the invention can prevent the compound in passive component and air from generating chemistry
Reaction, and the service life of this memory storage device is extended.
(2) protective film of the memory storage device of sulfuration resistant of the invention has the function of moisture-proof, dust-proof, antifouling.
(3) the connecting interface unit of the memory storage device of sulfuration resistant of the invention has the characteristic of wear-resisting and resistance to plug,
And signal transmission can be made more stable.
(4) error amount of the resistance of the memory storage device of sulfuration resistant of the invention is contracted to about 1%, can flow through
One size of the electric current of this resistance is more accurate.
Detailed description of the invention
Fig. 1 is the schematic diagram that passive component generates silver sulfide.
Fig. 2 is the front view of the memory storage device of sulfuration resistant of the invention.
Fig. 3 is the rearview of the memory storage device of sulfuration resistant of the invention of the invention.
Specific embodiment
The effect of understanding technical characteristic, content and advantage of the invention for benefit and its can reach, hereby by present invention cooperation
Attached drawing, and detailed description are as follows with the expression-form of embodiment, and wherein used schema, purport are only to illustrate and assist
The use of specification, actual proportions and precisely configuration after may not implementing for the present invention, therefore not should just appended schema ratio and
Configuration relation is interpreted, limits the invention to interest field in actual implementation, and conjunction is first chatted bright.
Please refer to figs. 2 and 3, is the front view and rearview of the memory storage device of sulfuration resistant of the invention.At this
In embodiment, the memory storage device 100 of sulfuration resistant is implemented with a SODIMM to illustrate, and may include a connecting interface unit
10, multiple volatile memory cells 20 and a printed circuit board 30.Wherein this multiple volatile memory cell 20 can be more
A memory grain, connecting interface unit 10 can be a golden finger, wherein this multiple volatile memory cell 20 and connecting interface
Unit 10 is located on printed circuit board 30.
It is noted that above-mentioned memory storage device is implemented with SODIMM to illustrate, but not limited to this, can also
With ECC Unbuffered Dual In-Line Memory Module (ECC UDIMM), ECC Small Outline Dual
In-Line Memory Module, Load Reduced DIMM (LRDIMM), UDIMM, RDIMM are implemented to illustrate.
As shown, connecting interface unit 10 can be used to be coupled to a host system, the mode of coupling is by connecting interface
Unit 10 is inserted into host system the memory bank on mainboard, and then carries out the transmission of electric power or data.Wherein, this is connected
The thickness of interface unit 10 can be between 20~30 microns, and preferably, and the thickness of this connecting interface unit 10 can
Between 35~45 microns, to have wear-resisting and resistance to plug function.
In addition, this printed circuit board 30 includes multiple sulfuration resistant passive components 31 and a protective film 32, it is plurality of anti-
Vulcanizing passive component 31 may include a sulfuration resistant resistance 311 and a sulfuration resistant exclusion 312, can be used to control and conduct an electric current
To volatile memory cell 20, wherein this electric current is to be provided by host system through connecting interface unit 10.
Protective film 32 is to cover printed circuit board 30.It is further illustrated, this protective film 32 can use a coating
Protection (conformal coating) technology come cover on the printed wiring board 30, with provide it is moisture-proof, dust-proof, antifouling and increase
Add the ability that component is wear-resisting on printed circuit board 30.
In one embodiment, when sulfuration resistant passive component 31 includes a sulfuration resistant resistance 311, at 25 degree of C of temperature, then
One optimum resistance value of sulfuration resistant resistance 311 is 240 ohm, and the error amount of the resistance value of sulfuration resistant resistance 311 is between 240 Europe
In 5% section up and down of nurse.
In a preferred embodiment, when sulfuration resistant passive component 31 includes a sulfuration resistant resistance 311, at 25 degree of temperature
Under C, then an optimum resistance value of sulfuration resistant resistance 311 is 240 ohm, and the error amount of the resistance value of sulfuration resistant resistance 311 is situated between
In in 240 ohm of 3% section up and down.
In a preferred embodiment, when sulfuration resistant passive component 31 includes a sulfuration resistant resistance 311, at 25 degree of temperature
Under C, then an optimum resistance value of sulfuration resistant resistance 311 is 240 ohm, the error amount of the resistance value of sulfuration resistant resistance 311 between
In 240 ohm of 1% section up and down.
In a preferred embodiment, when sulfuration resistant passive component 31 includes a sulfuration resistant exclusion 312, at 25 degree of temperature
Under C, then a lowest resistance value of sulfuration resistant exclusion 312 is 15 ohm and its highest resistance is 39 ohm, wherein this sulfuration resistant
Exclusion 312 includes four identical resistance.Further description, the specification of this sulfuration resistant exclusion 312 can be 8P4R or
4P2R.In the present embodiment, four resistance numbers in sulfuration resistant exclusion 312 are only for example example, are not limited thereto, in reality
The sulfuration resistant exclusion comprising multiple resistance is designed using the demand of upper visual user in border.
It is noted that the memory storage device of sulfuration resistant of the invention uses the extremely low sulfuration resistant resistance of error amount
Or sulfuration resistant exclusion, biggish current flowing can be effectively avoided by memory storage device, in turn result in memory and deposit
The damage of storage device.
By above-mentioned it is known that the memory storage device of sulfuration resistant of the invention is replaced now using sulfuration resistant passive component
Some passive components, and the effect of reinforce using protective film dust-proof and waterproof, and then effectively maintain on memory storage device
Electric conductivity, therefore can effectively prolong the service life.
The foregoing is merely illustratives, rather than are restricted person.It is any without departing from spirit and scope of the invention, and to it
The equivalent modifications or change of progress, are intended to be limited solely by appended claims.
Claims (9)
1. a kind of memory storage device of sulfuration resistant, which is characterized in that the memory storage device includes:
Connecting interface unit, to be coupled to host system；
Multiple volatile memory cells；And
Printed circuit board includes multiple sulfuration resistant passive components and protective film, and the multiple sulfuration resistant passive component is to control
The multiple volatile memory cell is made and conducts current to, the protective film is to cover the printed circuit board；
Wherein the multiple sulfuration resistant passive component includes sulfuration resistant resistance and sulfuration resistant exclusion.
2. memory storage device as described in claim 1, which is characterized in that the optimum resistance value of the sulfuration resistant resistance is
240 ohm.
3. memory storage device as described in claim 1, which is characterized in that the error amount of the resistance value of the sulfuration resistant resistance
In 240 ohm of 5% section up and down.
4. memory storage device as described in claim 1, which is characterized in that the error amount of the resistance value of the sulfuration resistant resistance
In 240 ohm of 3% section up and down.
5. memory storage device as described in claim 1, which is characterized in that the error amount of the resistance value of the sulfuration resistant resistance
In 240 ohm of 1% section up and down.
6. memory storage device as described in claim 1, which is characterized in that the lowest resistance value of the sulfuration resistant exclusion is 15
Ohm.
7. memory storage device as described in claim 1, which is characterized in that the highest resistance of the sulfuration resistant exclusion is 39
Ohm.
8. memory storage device as described in claim 1, which is characterized in that the connecting interface unit is golden finger, and institute
The thickness of golden finger is stated between 20 to 30 microns.
9. memory storage device as described in claim 1, which is characterized in that the connecting interface unit is golden finger, and institute
The thickness of golden finger is stated between 35 to 45 microns.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610348460.2A CN105931663B (en) | 2016-05-24 | 2016-05-24 | The memory storage device of sulfuration resistant |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610348460.2A CN105931663B (en) | 2016-05-24 | 2016-05-24 | The memory storage device of sulfuration resistant |
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| Publication Number | Publication Date |
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| CN105931663A CN105931663A (en) | 2016-09-07 |
| CN105931663B true CN105931663B (en) | 2019-03-01 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM363666U (en) * | 2009-04-01 | 2009-08-21 | Walsin Technology Corp | Chip resistor and chip resistor array having anti-sulfuration electrode structure |
| TWM396474U (en) * | 2010-09-02 | 2011-01-11 | Ever Ohms Technology Co Ltd | Anti- vulcanization chip type resistor |
| TWM404477U (en) * | 2010-10-22 | 2011-05-21 | Ta I Technology Co Ltd | Sulfur resisting patterned structure of electronic device |
| CN105427975A (en) * | 2015-12-29 | 2016-03-23 | 株洲宏达电通科技有限公司 | Anti-sulfuration plate-type thick film fixed resistor and production method thereof |
| CN205645280U (en) * | 2016-05-24 | 2016-10-12 | 宇瞻科技股份有限公司 | Anti memory storage device who vulcanizes |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7982582B2 (en) * | 2007-03-01 | 2011-07-19 | Vishay Intertechnology Inc. | Sulfuration resistant chip resistor and method for making same |
-
2016
- 2016-05-24 CN CN201610348460.2A patent/CN105931663B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM363666U (en) * | 2009-04-01 | 2009-08-21 | Walsin Technology Corp | Chip resistor and chip resistor array having anti-sulfuration electrode structure |
| TWM396474U (en) * | 2010-09-02 | 2011-01-11 | Ever Ohms Technology Co Ltd | Anti- vulcanization chip type resistor |
| TWM404477U (en) * | 2010-10-22 | 2011-05-21 | Ta I Technology Co Ltd | Sulfur resisting patterned structure of electronic device |
| CN105427975A (en) * | 2015-12-29 | 2016-03-23 | 株洲宏达电通科技有限公司 | Anti-sulfuration plate-type thick film fixed resistor and production method thereof |
| CN205645280U (en) * | 2016-05-24 | 2016-10-12 | 宇瞻科技股份有限公司 | Anti memory storage device who vulcanizes |
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| Publication number | Publication date |
|---|---|
| CN105931663A (en) | 2016-09-07 |
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