TWM528999U - Substrate etching treatment equipment - Google Patents

Description

Substrate etching processing equipment

The present invention relates to a substrate etching processing apparatus, and more particularly to a substrate etching processing apparatus capable of solving a pool effect and realizing ultrafine line etching.

With the trend of light, thin, high-density and thin-line of electronic products, the distance between the width of the line and the line is relatively narrower and finer; the etching technology of the printed circuit board has higher requirements for refinement. Some advanced electronic products require wiring to be as thin as 1.5 mils or less, which poses an unprecedented challenge to board etching technology, even because the product cannot achieve the desired accuracy and yield, which has led to the impediment of the introduction of such advanced electronic products. How to ensure that the etching effect is thinner, it is becoming more and more important to achieve ultra-fine.

In the etching apparatus and method in the prior art, since the roller hinders the discharge of the etching liquid, the etching effect between the rollers causes the etching effect of the upper and lower plates of the level line device to be different. Specifically, the etch rate of the edge of the board is faster than the etch rate of the middle of the board. In some cases, a serious imbalance may result, resulting in a large difference in the Etch Factor (E.F) between the upper and lower board. On the other hand, when the thin line is reduced in the line pitch, the syrup and the like are prevented from being etched by the surface tension, and the syrup does not easily enter between the fine lines.

At present, there are two methods, one is the method of spraying up and down by the layering method, and the other is to use the copper etching method to make the copper surface thin. However, the effect of the two methods is not good, and the etching quality of the line cannot be effectively improved.

On the whole, the prior art faces several problems.

1. Pudding effect:

Referring to FIG. 4A, there is often a problem of the pool effect in the prior art, that is, the syrup or the like is easily accumulated in the first region 710 of the central portion of the substrate 700. In contrast, the fourth region 740 of the edge portion of the substrate 700 is relatively etched. Further, the first region 710 of the substrate 700 is not easily removed due to the blocking of the waste liquid such as the medicated water, so that the fresh syrup cannot be hit on the copper surface. Since the etching action is caused by the transition from copper metal to copper ions, which belongs to an oxidation effect, the first region 710 is hindered by the syrup and reduces the oxygen-assisted oxidation; therefore, the thickness of the central portion on a substrate 700 Thicker, the thickness of the surrounding edges is thinner. That is, the thickness of the first region 710 > the second region 720 > the third region 730 > the thickness of the fourth region 740.

2. The etching factor (E.F) is low:

The Etch Factor (E.F.) is an index of etching quality. The calculation formula is: 2 times copper thickness / (lower line width - upper line width). Referring to FIG. 3A and FIG. 5A, the window side indicates the side of the substrate 600 near the window of the etching processing apparatus, the middle of the board indicates the intermediate portion of the substrate 600, and the inner side indicates the side closer to the inside in the etching processing apparatus. The bottom end of the upper line 610 of the substrate 600 has a residual portion 611, which is known in the industry as a residual foot. The relationship between the copper thickness D1, the upper line width W3, and the lower line width W4 determines the etching factor. As shown in FIG. 5A, the etching factor in the prior art is 1.866, 2.735, and 2.792 from the first column to the third column, respectively. In general, the larger the etching factor, the better. However, the etching factor in the prior art is only 2.792, which cannot meet the requirement of an etching factor greater than 4.

3. Fine line etching is not possible:

The industry uses L/S to represent the etched line capability. Please refer to Figure 3A, where L0 is the line width and S0 is the pitch. The etching processing apparatus in the prior art has an etching ability L0/S0 of 30 μm / 30 μm, which is a technical bottleneck. Unable to meet the requirements of ultra-fine lines and thin lines, that is, the technical requirements of L/S less than 25μm/25μm.

In view of this, the creator feels that the above-mentioned deficiency can be improved, and is devoted to research and cooperation with the application of theory, and finally proposes a creation that is reasonable in design and effective in improving the above-mentioned deficiency.

The main purpose of the present invention is to provide a substrate etching processing apparatus which can effectively solve the pool problem, has an etching factor of up to 4 or more, and can realize ultra-fine line etching of L/S of less than 25 μm / 25 μm.

The substrate etching processing apparatus of the present invention includes more than one two-fluid etching device and one or more vacuum suction devices. The two-fluid blasting device can receive the working syrup and the working gas provided externally, and the vacuum suction device is disposed on one side of the two-fluid blasting device. The two-fluid blasting device and the vacuum suction device are disposed on one side of the substrate, and the two-fluid blasting device can mix the working syrup and the working gas to generate a gas-liquid mixed spray mist and spray on the surface of the substrate, and the vacuum suction device is used. To absorb the working syrup remaining on the substrate.

In an embodiment of the present invention, the particle size of the working syrup in the gas-liquid mixed spray is Q, wherein 10 μm < Q < 50 μm.

In an embodiment of the present invention, a conveying device is further included for conveying the substrate to linearly move the substrate relative to the two-fluid etching device.

In an embodiment of the present invention, the two-fluid erosion device is disposed above the substrate.

In one embodiment of the present invention, two two-fluid eroding devices are provided, one of which is disposed above the substrate and the other two fluid eroding device is disposed below the substrate.

In an embodiment of the present invention, a plurality of two-fluid erosion devices are disposed, a plurality of vacuum suction devices are disposed, and vacuum suction devices are respectively disposed on opposite sides of the two-fluid erosion device.

In an embodiment of the present invention, the vacuum suction device is provided with a plurality of arrangements in which the two fluid erosion device and the vacuum suction device are spaced apart from each other.

In one embodiment of the present creation, the distance of the two-fluid nozzle to the surface of the substrate is greater than the distance of the vacuum suction device to the surface of the substrate.

The creation has the following technical effects, and uses a vacuum suction device to continuously absorb the residual etching liquid on the substrate, thereby promoting the exchange rate of the fresh syrup of the substrate to improve the uniformity of etching. Injecting strong water mist and mixing high-pressure air through a two-fluid blasting device In the method, an etchant or the like is sprayed onto the substrate to galvanize between the lines, thereby achieving an etching operation of the ultra-fine line. Therefore, the substrate etching processing equipment provided by the creation completely eliminates the pool effect problem, greatly improves the etching factor, and can produce ultra-precision line etching with L/S less than 25 μm/25 μm, and obtain uniform etching with uniform line height. Sexual technical effects.

In order to further understand the features and technical contents of this creation, please refer to the following detailed description and drawings of this creation, but these descriptions and drawings are only used to illustrate this creation, not the right to this creation. The scope is subject to any restrictions.

100‧‧‧Two fluid erosion device

110‧‧‧Two-fluid erosion module

111‧‧‧Two fluid nozzle

112‧‧‧ first entrance

113‧‧‧second entrance

200‧‧‧Vacuum suction device

300‧‧‧Conveyor

400‧‧‧Substrate

410‧‧‧ lines

500‧‧‧Two fluid erosion device

600‧‧‧Substrate

610‧‧‧ lines

611‧‧‧ Residue

700‧‧‧Substrate

710‧‧‧First District

720‧‧‧Second District

730‧‧‧ Third District

740‧‧‧Fourth District

800‧‧‧Substrate

810‧‧‧First District

900‧‧‧Roller

L0, L1‧‧‧ line width

S0, S1‧‧‧ spacing

D1‧‧‧ line thickness

W1, W3‧‧‧Upline width

W2, W4‧‧‧ offline width

1A is a first schematic view of a substrate etching apparatus of the substrate etching processing apparatus of the present invention.

1B is a second schematic view of a substrate etching apparatus of the substrate etching processing apparatus of the present invention.

2 is a third schematic view of a substrate etching apparatus of the substrate etching processing apparatus of the present invention.

3A is a cross-sectional view of a substrate in a prior art.

3B is a cross-sectional view of a substrate of the substrate etching processing apparatus of the present invention.

4A is a schematic diagram of the pool effect of a substrate in the prior art.

4B is a schematic view of a substrate of the substrate etching processing apparatus of the present invention.

FIG. 5A is an experimental data diagram of an etching factor in the prior art.

FIG. 5B is experimental data of an etching factor of the substrate etching processing apparatus of the present invention.

The following is a specific example to illustrate the implementation of the "substrate etching processing apparatus" disclosed in the present application. The following embodiments will further explain the related technical content of the present invention, but the disclosure is not intended to be limiting. The technical scope of this creation.

Please refer to FIG. 1A, FIG. 1B, and FIG. 2 according to the substrate etching processing apparatus provided by the present creation. The substrate etching processing equipment of the present invention includes more than one Fluid erosion device 100 and more than one vacuum suction device 200. The two-fluid eroding device 100 can accept externally supplied working syrup and working gas. A two-phase mixture etching apparatus refers to a two-fluid blasting apparatus having a two-fluid nozzle, and a two-fluid nozzle or a gas-assisted nozzle is a principle of utilizing a high-speed flow of compressed air to assist liquid atomization. The nozzle is different from a single fluid nozzle that only pumps the liquid with a pump. The vacuum suction device 200 is disposed on one side of the two-fluid erosion device 100. The two-fluid erosion device 100 and the vacuum suction device 200 are disposed on one side of the substrate 400. The two-fluid erosion device 100 can mix the working syrup and the working gas to generate a gas-liquid mixed spray mist and spray it onto the surface of the substrate 400. The vacuum suction device 200 is used to suck the working syrup remaining on the substrate 400.

In an embodiment of the present creation, the particle size of the working syrup in the gas-liquid mixed spray is defined as Q, wherein 10 μm < Q < 50 μm.

In an embodiment of the present invention, the transport device 300 is further included to linearly move the substrate 400 relative to the two fluid erosion device 100. The transport device 300 can transport the substrate 400 such as a flexible circuit board from the left side of the drawing to the right of the drawing. Further, the substrate 400 is exemplified by a roll-to-roll flexible circuit board that is scrolled by the transport device 300 to linearly move the substrate 400 relative to the two-fluid erosion device 100. A plurality of rollers 900 are disposed below the substrate 400 for guiding the linear motion of the substrate 400.

In one embodiment of the present invention, the two-fluid erosion device 100 and the vacuum suction device 200 are disposed above the substrate 400.

In an embodiment of the present invention, the two-fluid erosion device 100 is provided with two or more, one of the two-fluid erosion devices 100 is disposed above the substrate 400, and the other two-fluid erosion device 500 is disposed on the substrate. Below the 400. Through the above arrangement, the line etching operation can be simultaneously performed on the top side and the bottom side of the substrate 400.

In an embodiment of the present invention, a plurality of two-fluid erosion devices 100 are provided, a plurality of vacuum suction devices 200 are disposed, and opposite sides of the two-fluid erosion device 100 are respectively provided with vacuum suction devices 200. In an embodiment of the present creation, the second stream The body erosion device 100 is spaced from the vacuum suction device 200. In detail, when the two-fluid etching device 100 sprays the gas-liquid mixed spray to the surface of the substrate 400, the vacuum suction device 200 disposed on both sides of the two-fluid etching device 100 continuously absorbs the residue on the substrate 400. The working syrup on the surface, so that the surface of the substrate 400 can continuously receive fresh syrup, that is, a gas-liquid mixed spray, thereby obtaining a good etching effect. Thereby, the pool effect problem in the prior art is completely solved.

As shown in FIG. 1A and FIG. 1B, the two-fluid eroding device 100 can receive an externally supplied working syrup and a working gas. Working syrups include, but are not limited to, various etching syrups and deionized water, and the working gases include, but are not limited to, nitrogen or other gases. The two-fluid blasting device 100 includes a plurality of two-fluid blasting modules 110. Each of the two-fluid blasting modules 110 has a two-fluid nozzle 111, and the working syrup is filled from the first inlet 112 into the two-fluid blasting module 110. The working gas is filled from the second inlet port 113 into the two-fluid blasting module 110. In the operation process, the high-pressure working gas is used as the power, and the auxiliary working water is micro-atomized. The average spray particle size is fine, and the finest is 10~20μm (micron meter).

In an embodiment of the present invention, the two-fluid erosion device 100 performs a left-right rocking motion, so that the two-fluid nozzle 111 of the two-fluid erosion module 110, the gas-liquid mixed sprayed spray, is sprayed on the base. A predetermined area on the material 400.

In one embodiment of the present creation, the distance of the two-fluid nozzle 111 from the surface of the substrate 400 is greater than the distance from the vacuum suction device 200 to the surface of the substrate 400. In other words, the discharge port of the two-fluid nozzle 111 is higher than the suction port of the vacuum suction device 200. The intention is to allow the two-fluid nozzle 111 to have a predetermined distance away from the surface of the substrate 400 in order to spray a larger area. In contrast, the suction port of the vacuum suction device 200 must be close to the surface of the substrate 400 to facilitate the absorption of the working syrup remaining on the surface of the substrate 400.

Referring to FIG. 4B, the substrate etching processing apparatus provided by the present invention has experimentally proved that the residual portion of the working syrup is scarce, such as the first region 810 on the substrate 800. The first zone of the working potion remaining in the present embodiment is compared to the prior art of FIG. 4A 810, compared with the first zone 710, the second zone 720, the third zone 730, and the fourth zone 740 of FIG. 1A, the area occupied by the residual working medicinal solution in the creation is greatly reduced, and the pool effect in the prior art is completely solved. problem.

As shown by the dashed box in Fig. 5B, the substrate etching processing apparatus of the present invention has etching factors of 4.418, 6.826, and 5.808. Compared with the prior art of FIG. 5A, the etching factor is below 4, and the etching factor of the present invention is all above 4. It is also solved by the problem that the etching factor is low in the conventional technology. As shown in FIG. 3B, in an embodiment of the present invention, the line 410 on the substrate 400 has a significant reduction in residual motion. The L/S of this creation, that is, the line width L1/S1 is less than or equal to 25μm/25μm, compared with the technical bottleneck of 30μm/30μm in L0/S0 of FIG. 3A, the substrate etching processing equipment provided by the present invention fully satisfies Ultra-fine line requirements.

[Possible effects of the examples]

In summary, the creation uses a vacuum suction device to continuously remove the residual etchant solution on the substrate, thereby promoting the exchange of fresh syrup of the substrate and improving the uniformity of etching. By injecting a strong fine mist and mixing high-pressure air through the two-fluid etching device, the etchant and the like are sprayed onto the substrate to galvanize, thereby achieving the etching operation of the ultra-fine line. The substrate etching processing equipment provided by the present invention completely solves the problem of the pool effect, greatly improves the etching factor, and can produce an ultra-precision line etching with an L/S of less than 25 μm/25 μm, and obtains a uniform etching uniformity technique. effect.

The above description is only a preferred and feasible embodiment of the present invention, and thus does not limit the scope of the patent of the present invention. Therefore, any equivalent technical changes made by using the present specification and the contents of the schema are included in the scope of protection of the present creation. .

100‧‧‧Two fluid erosion device

200‧‧‧Vacuum suction device

300‧‧‧Conveyor

400‧‧‧Substrate

500‧‧‧Two fluid erosion device

900‧‧‧Roller

Claims (10)

A substrate etching processing apparatus comprising: one or more two-fluid etching devices, which can receive a working syrup and a working gas provided externally; and one or more vacuum suction devices disposed in the two-fluid blasting device One side; wherein the two-fluid blasting device and the vacuum suction device are disposed on one side of a substrate, and the two-fluid blasting device can mix the working syrup and the working gas to generate a gas-liquid mixed spray fog, and Sprayed onto the surface of the substrate, the vacuum suction device is used to absorb the working syrup remaining on the substrate. The substrate etching processing apparatus according to claim 1, wherein the particle diameter of the working syrup in the gas-liquid mixed spray is Q, wherein 10 μm < Q < 50 μm. The substrate etching processing apparatus of claim 1, further comprising a conveying device for conveying the substrate to linearly move the substrate relative to the two-fluid etching device. The substrate etching processing apparatus of claim 1, wherein the two-fluid etching apparatus is disposed above the substrate. The substrate etching processing apparatus of claim 1, wherein two of the two-fluid etching apparatuses are disposed, one of the two-fluid etching apparatus is disposed above the substrate, and the other two-fluid etching apparatus It is disposed below the substrate. The substrate etching processing apparatus of claim 1, wherein the two-fluid etching apparatus is provided in plurality, the vacuum suction apparatus is provided in plurality, and the vacuum is disposed on opposite sides of the two-fluid etching apparatus Attraction device. The substrate etching processing apparatus according to claim 1, wherein the two-fluid etching apparatus is provided in plurality, and the vacuum suction apparatus is provided in plurality, and the two-fluid etching apparatus and the vacuum suction apparatus are spaced apart from each other. The substrate etching processing apparatus of claim 1, wherein the two-fluid etching apparatus A plurality of two fluid blasting modules are included, and each of the two fluid blasting modules has a two fluid nozzle. The substrate etching processing apparatus of claim 1, wherein the two-fluid etching device performs a rocking motion to spray a gas-liquid mixed spray sprayed from the two-fluid nozzle on a predetermined area of the substrate. . The substrate etching processing apparatus of claim 1, wherein a distance of the two-fluid nozzle to a surface of the substrate is greater than a distance of the vacuum suction device to a surface of the substrate.