TWM528513U - Chemical vapor deposition or epitaxial layer growth reactor and substrate tray and support shaft - Google Patents

Description

Chemical vapor deposition or epitaxial growth reactor and its substrate tray and support shaft

The present invention relates to the manufacture of semiconductor devices, and more particularly to a device for growing an epitaxial layer or performing chemical vapor deposition on a substrate such as a substrate.

The design of the reactor is critical in the production of epitaxial layers or chemical vapor deposition on substrates such as substrates. In the prior art, the reactor has various designs including: a horizontal reactor in which the substrate is installed at an angle to the inflowing reaction gas; a planetary rotating horizontal reactor, In the reactor, the reaction gas level is through a substrate; and a vertical reactor in which, when the reaction gas is injected down onto the substrate, the substrate is placed on the substrate tray in the reaction chamber and is relatively Rotation at a higher speed. This high speed rotating vertical reactor is one of the most commercially important MOCVD reactors.

For example, the Chinese invention patent (Chinese Patent No.: 01822507.1) entitled "The pedestal-free reactor for growing an epitaxial layer on a substrate by chemical vapor deposition" proposes a pedestal-free reactor, as shown in FIG. Shown, it includes a reaction chamber, a rotatable spindle 400, a heating device 140 for heating the substrate, and a substrate tray 300 for supporting the substrate. The spindle 400 includes a top surface 481 and a spindle wall 482, and the substrate tray 300 includes a central recessed portion 390. When the substrate tray 300 is mounted to the spindle 400, the spindle 400 is inserted into the central recessed portion 390 until a tight fit between the spindle wall 482 and the wall of the recessed portion 390 creates a retention of the substrate tray 300 in the deposition position. The frictional force, that is, the substrate tray 300 is held on the top end of the spindle 400 by friction and is driven to rotate together with the spindle 400.

However, in the actual process, the foregoing reactor is hard to be held by the frictional force only (for example, slip due to insufficient friction) to hold the substrate tray 300 on the spindle 400 rotating at a high speed and rotate the two together. Resolving this deficiency by an additionally provided holding device increases the complexity of the system; in addition, due to the limitation of the diameter of the main shaft 400, it is difficult to ensure that the substrate tray 300 is always balanced during the deposition process, provided that the substrate tray 300 is in the deposition process. The center of gravity loses balance and sways, resulting in uneven growth of the resulting substrate epitaxial layer; further, due to the close fit between the main wall 482 and the wall of the recessed portion 390, the substrate is usually processed in a high temperature environment. The main shaft 400 generates thermal expansion, and the thermal expansion coefficient of the main shaft 400 is higher than the thermal expansion coefficient of the substrate tray 300, and the recessed portion 390 will be broken due to thermal expansion of the main shaft 400, eventually causing the entire substrate tray 300 to be cracked; During the deposition process, the rotational speed of the spindle 400 is generally inconsistent with the rotational speed of the substrate tray 300, and there is a certain deviation between the two, which makes it impossible to be accurate. The amount of the position of the substrate of the reactor, and thus can not accurately measure the temperature of the substrate and a further control temperature of the substrate.

The substrate tray temperature is a critical parameter in the process of growing epitaxial layers or chemical vapor deposition on a substrate, which determines the uniformity of epitaxial layers or chemical deposition on the substrate, due to the substrate tray. The area of the substrate tray is different, and the temperature of the substrate tray in different regions may cause unevenness of the process, which does not meet the qualification requirements of the production process. Therefore, adjusting the temperature uniformity of the substrate trays in different regions is to control the uniformity of the above process results. No important factor.

The purpose of the present invention is to provide a chemical vapor deposition or epitaxial growth reactor and a substrate tray located in the reactor and a support shaft thereof, and the substrate tray can be balanced under the support of the support shaft during the processing of the substrate, Reliably rotating, and the substrate tray is not broken by the thermal expansion of the support shaft. At the same time, the support shaft of the present invention can reduce the heat in the central area of the substrate tray and conduct along the support axial direction, thereby improving the central area of the substrate tray and Temperature uniformity in the edge region.

Specifically, the present invention discloses a support shaft for use in a chemical vapor deposition or epitaxial growth reactor for supporting a substrate tray and causing it to rotate. The support shaft includes:

Spindle section

a support portion connected to one end of the main shaft portion and extending outwardly along the periphery of the main shaft portion, the support portion including an extension surface;

a plug portion connected to the main shaft portion and extending a height in a direction opposite to the main shaft portion along the extending surface;

One or more support platforms are disposed around the extension surface around the extension surface, and the support table includes a support surface for supporting the substrate tray, and the support surface is higher than the extension surface.

Preferably, the insertion portion includes a top surface and an outer side surface, the outer side surface includes a first outer side surface and a second outer side surface, wherein the first outer side surface is vertically disposed above the extension surface, and the second outer side surface is disposed from the first The outer side faces the curved surface of the top surface.

Preferably, the insertion portion is located in a central region of the extension surface and is non-cylindrical in shape.

Preferably, the first outer side surface includes a plurality of mutually parallel planes and a plurality of arcuate surfaces that protrude in opposite directions.

Preferably, the support table is an annular structure provided around the insertion portion, and the annular support table is a continuous or intermittent structure.

Preferably, the support table is a plurality of protrusions disposed around the insertion portion.

Preferably, the height of the support table is less than the height of the plug portion.

Preferably, the main shaft portion includes a first main shaft portion coupled to the support portion and a second main shaft portion coupled to the other end of the first main shaft portion, the diameter of the first main shaft portion being smaller than the diameter of the second main shaft portion.

Preferably, the support shaft is provided with a mechanical mounting hole, and the mechanical mounting hole is provided with an opening on the top surface of the insertion portion and extends to a certain depth in the direction of the main shaft portion.

Further, the present invention discloses a substrate tray matched with the support shaft, the substrate tray including a first surface and a second surface, the first surface for placing a plurality of substrates to be processed, and the second surface The central position is provided with an inwardly recessed recess, the recess forming a top surface inside the substrate tray, the top surface of the recess is non-circular, and the recess is for receiving the plug of the support shaft The second surface is at least partially in contact with the support surface of the support table.

Preferably, the ratio of the recess depth of the recess to the thickness of the substrate tray ranges from 1/2 to 3/4.

Preferably, a step is arranged around the substrate tray, and the step is for accommodating the robot arm for conveniently accessing the substrate tray.

Further, the present invention discloses a chemical vapor deposition or epitaxial growth reactor comprising a substrate tray and a support shaft therein for supporting the substrate tray and rotating the support shaft, the support shaft comprising:

Spindle section

a support portion connected to one end of the main shaft portion and extending outwardly along the periphery of the main shaft portion, the support portion including an extension surface;

a plug portion connected to the main shaft portion and extending a height in a direction opposite to the main shaft portion along the extending surface;

One or more support platforms are disposed around the extension surface of the extension surface, and the support platform includes a support surface for supporting the substrate tray, and the support surface is higher than the extension surface;

The substrate tray includes a first surface for placing a plurality of substrates to be processed, and a second surface having a recessed portion recessed inwardly, the recessed portion being at the base A top surface is formed inside the sheet tray, and the top surface of the recess is non-circular in shape, the recess is for receiving the insertion portion of the support shaft, and the second surface is at least partially in contact with the support surface of the support table.

Further, the present invention also discloses a support shaft for use in a chemical vapor deposition or epitaxial growth reactor for supporting a substrate tray and driving the rotation thereof, wherein the support shaft comprises:

Spindle section

a support portion connected to one end of the main shaft portion and extending outwardly along the periphery of the main shaft portion, the support portion including a support surface;

a plug portion connected to the main shaft portion and extending to a height in a direction opposite to the main shaft portion along a central portion of the support surface;

One or more insulated pipes that are recessed downward are disposed on the support surface.

Preferably, the insulated pipe is an annular structure disposed around the plug portion, and the annular structure is continuously or intermittently disposed.

Preferably, the insulated pipe is a plurality of discrete recessed structures.

Preferably, a plurality of discrete insulated pipes are disposed through the support.

The reactor and its support shaft provided by the present invention have many advantages: first, the entire substrate tray is not swayed by the center of gravity after being placed on the support shaft and during the processing of the substrate, so that the support shaft can The substrate tray is driven to rotate smoothly and synchronously; in addition, the rotation of the substrate tray is achieved by the force (pushing force or abutting action) of the insertion portion in the horizontal surface direction, so that the prior art does not occur. In the middle, there is a phenomenon of “friction and slip”; in addition, after the joint and the recess are connected, a gap is allowed between the two, which allows the plug to be in a high-temperature processing environment. The thermal expansion does not cause the problem of thermal expansion caused by frictional fit between the two in the prior art, and eventually the insertion of the substrate tray by the expansion of the substrate tray due to heat. The creation is provided with a downwardly recessed heat insulating pipe on the support surface of the support portion, or the extension surface of the support portion is lower than the support surface of the support table, so that the support shaft not only provides the necessary supporting effect, but also minimizes the support surface and The contact area of the substrate tray, thereby preventing the heat of the central region of the substrate tray contacting the support shaft from being excessively transmitted to the support shaft during the contact, reducing heat loss in the central region of the substrate tray, and reducing the central area of the substrate tray and The temperature difference in other areas enables uniformity of substrate processing. Finally, the present setup also facilitates the immediate, in situ measurement of the specific location of the substrate within the closed reaction chamber and the temperature of the substrate during substrate processing.

As shown in Fig. 2, Fig. 2 is a schematic view showing a front cross-sectional surface of a reactor according to the present embodiment. The reactor can be used for chemical vapor deposition or epitaxial layer growth, but it should be understood that it is not limited to such applications. The reactor includes a reaction chamber 10 in which at least one substrate tray 200 and a support shaft 100 for supporting the substrate tray 200 are disposed. A side wall of the reaction chamber 10 is provided with a transfer port P for the substrate tray 200 to be transported in and out. The substrate tray 200 includes a first surface 201 and a second surface 202 that are substantially parallel. The first surface 201 is used to place a plurality of processed substrates. The second surface 202 of the substrate tray 200 is provided with a recess 210 that is recessed inward. 2 shows that the edge of the substrate tray 200 is provided with a step 205, that is, the diameter of the first surface 201 of the substrate tray 200 is larger than the diameter of the second surface 202. The step 205 is provided for the purpose of the substrate tray 200. When the transfer port P is moved in and out, the step 205 can accommodate a robot (not shown), and the robot can lift and move the substrate tray by the step 205 (support table).

Generally, before the substrate 10 is subjected to the substrate processing, the substrate tray 200 is placed outside the reaction chamber 10, and a plurality of substrates to be processed are placed in advance on the substrate tray 200. Then, the substrate tray 200 is transferred into the reaction chamber 10 by the robot or other means through the transfer port P, and is detachably placed on the support shaft 100, and supported by the support shaft 100, thereby preparing to enter the substrate. Process status. The substrate tray 200 is always supported by the support shaft 100 during the subsequent substrate process. The support shaft 100 is also coupled to a rotating mechanism M. The rotating mechanism M includes a motor. During the manufacturing process, the rotating mechanism M drives the support shaft 100 to rotate, and the support shaft 100 drives or drives the substrate tray 200 to rotate. After the substrate processing is finished, the rotation of the rotating mechanism M is stopped, so that the support shaft 100 and the substrate tray 200 are no longer rotated, and the substrate tray 200 is detached from the support shaft 100 by a robot or the like, and then borrowed. It is sent out of the reaction chamber 10 by the transfer port P.

Referring to FIGS. 3A and 3B, FIG. 3A is a perspective view showing a first surface of a substrate tray 200. The substrate tray 200 has a substantially disk shape, which is exemplarily shown on the first surface 201. A plurality of grooves or craters 220 for placing the substrate to be processed are placed in the grooves or craters 220 to prevent the substrate from being detached from the substrate tray during processing. The size and distribution of the grooves or craters 220 can be varied in various forms, and the design is distributed according to the size of the substrate to be processed in a specific process, and is not shown here. 3B is a perspective view showing the second surface of the substrate tray; FIG. 3B is a view showing the recessed portion 210 at a central portion of the second surface 202. In order to ensure that the support shaft drives the substrate tray to achieve synchronous rotation, the recess 210 is The cross-sectional shape in the horizontal direction is non-circular, and the shape of the horizontal cross section of the recessed portion in the present embodiment is substantially elliptical, but in order to facilitate the determination of the processing size, a pair of opposite side faces of the elliptical shape are set to two. The substantially parallel plane, the distance between the two parallel faces is easier to measure than the difficulty of measuring the distance between the two opposite curved faces of the ellipse, thus making it easier to measure the size of the recess. In this embodiment, the inner peripheral wall 216 of the recessed portion 210 includes two mutually parallel concave side faces and two curved side faces that are convex in opposite directions, wherein the inner peripheral wall 216 of the recessed portion 210 is substantially perpendicular to the second Surface 202 is provided. The recessed portion 210 forms a top surface 215 inside the substrate tray, and the shape of the shape is designed to facilitate the determination of the processing size; the second is that the two parallel concave side surfaces are provided with arcuate sides convex in opposite directions for the purpose of The formation of a relatively smooth processing line, considering that the substrate tray 200 is generally a graphite material, reducing the sharp processing angle can effectively reduce damage and particle contaminants during processing. The diameter of the substrate tray is typically matched to the size of the chemical vapor deposition reactor in which it is placed. For example, in the embodiment, the diameter of the substrate tray 200 ranges from 450 mm to 600 mm. Specifically, the diameter of the substrate tray may be any one of 450 mm, 480 mm, 500 mm, 550 mm, 580 mm, and 600 mm. In the present embodiment, the ratio of the recess depth of the recessed portion 210 to the thickness of the substrate tray is an important parameter. The ratio is too small, the recessed depth of the recessed portion is too small, the depth of the insertion portion into the recessed portion is too small, and the substrate tray is easily separated from the support shaft during the rotation of the support shaft, causing danger; the ratio is too large, the recess is The distance between the top surface 215 of the portion 210 and the first surface of the substrate tray is too small. Since the substrate tray is usually made of graphite, the substrate tray is easily broken, which cannot meet the requirements of the production process. Therefore, the ratio of the recess depth of the recessed portion 210 to the thickness of the substrate tray is set to be 1/2 to 3/4.

4, FIG. 4 is a perspective view of the support shaft 100 in the embodiment shown in FIG. 2. The support shaft 100 includes a main shaft portion 130, a support portion 120 connected to one end of the main shaft portion 130 and extending outwardly along the periphery of the main shaft portion 130. The support portion 120 includes an extension surface 121; and the support portion 120 The plug portion 110 is connected to the outside of the extension surface 121 by a certain distance or height. A support table 125 is disposed on the periphery of the extension surface 121. The support table 125 includes a support surface 126 for supporting the substrate tray 200. The support surface 126 is higher than the extension surface 121. The protrusion height of the support table 125 is smaller than the insertion portion 110. Raised height. The plug portion 110 includes a vertical side surface 111, an arcuate side surface 112, and a top surface 115, wherein the vertical side surface 111 is coupled to the extension surface 121 and substantially perpendicular to the extension surface 121, and includes two mutually parallel planes. 1111 and two curved faces 1112 protruding in opposite directions. The top surface 115 is disposed substantially parallel to the extension surface 121, and the shape of the top surface 115 is substantially the same as the horizontal cross-sectional shape of the recessed portion 210, and includes two straight sides that are parallel to each other and two curved sides that protrude in opposite directions. With respect to the contact surface of the insertion portion 110 and the extension surface 121, the top surface 115 has the same shape but a small area, so a vertical surface 111 to the top surface is formed between the vertical side surface 111 and the top surface 115. 115 inclined curved sides 112. The purpose of providing the curved side surface 112 is to allow the insertion portion 110 to be easily inserted into the recessed portion 210 when the insertion portion 110 and the recessed portion 210 of the substrate tray are engaged with each other, avoiding the top surface 115 of the insertion portion. Collision friction with the recess.

In the present creation, the main shaft portion 130 of the support shaft 100 includes a first main shaft portion 131 connected to the support portion 120 and a second main shaft portion 132 connected to the other end of the first main shaft portion 131. The diameter of the first main shaft portion 131 is larger than that of the first main shaft portion 131. The diameters of the two main shaft portions 132 may be the same or different. Preferably, the diameter of the first main shaft portion 131 is smaller than the diameter of the second main shaft portion 132, so that the smaller diameter of the first main shaft portion 131 can reduce the contact area between the main shaft portion and the support portion 120, and thus can Reducing the heat of the substrate tray 200 is conducted downward by the first main shaft portion 131. However, if the diameter of the main shaft portion 130 is too small, the mechanical strength of the main shaft portion is affected, and there is a risk in causing the main shaft portion to rotate at a high speed. Therefore, the inner diameter of the first main shaft portion 131 of the main shaft portion near the substrate tray is smaller than the inner diameter of the second main shaft portion 132 near the bottom of the reaction chamber, thereby ensuring that the heat of the substrate tray is reduced while the main shaft portion is lost. Support strength and rotational strength of the support shaft 100.

The support shaft 100 and the substrate tray 200 provided by the present invention are convenient to connect and separate from each other, and the two are not fixedly coupled together, and both of them can maintain synchronous rotation when the reaction chamber 10 performs substrate processing. In order to achieve this, the insertion portion 110 of the support shaft 100 can be detachably inserted into the recessed portion 210, so that the substrate tray 200 is placed on and supported by the support shaft 100, in this position and state. The support surface 126 of the support table 125 on the extension surface 121 is in contact with at least a portion of the second surface 202 of the substrate tray 200, and the substrate tray 200 is supported by the contact support surface 126. The support portion 120 is disposed at one end of the main shaft portion 130 and connected to each other. The support portion 120 extends outwardly along the periphery of the main shaft portion 130 to form a structure similar to a "shoulder" or a "support frame", thereby The substrate tray 200 placed thereon is supported or held in a balanced manner in the horizontal direction. The support portion 120 can be a support structure of various shapes or configurations, such as a cylindrical shape as shown, or a cube or other irregularly shaped support structure. The support portion 120 includes an extension surface 121. The edge portion of the extension surface is provided with a support base 125. The support surface 126 of the support table 125 supports the substrate tray, thereby avoiding the support surface and the substrate while achieving smooth support of the substrate tray. The contact surface of the second surface 202 of the tray is too large, so that the heat in the central portion of the substrate tray is conducted downward by the support shaft 100, resulting in uneven temperature distribution in the central region and the edge region of the substrate tray. In the present embodiment, after the substrate tray 200 is placed over the support shaft 100, the substrate tray 200 generally needs to maintain a smooth rotation at a certain speed during substrate processing. The rotational movement of the substrate tray 200 is achieved by the insertion portion 110 of the support shaft 100 pushing or driving or driving the substrate tray 200 in the horizontal direction, instead of being between the substrate tray and the support shaft as in the prior art. Friction to achieve the joint movement of the two. Since the plug portion 110 can adjust its position in the horizontal plane as the rotating mechanism M located below it rotates, some portions of the vertical side 111 of the plug portion 110 can be rotated at a certain position or angle thereof. Some portions of the inner peripheral wall 216 of the recessed portion 210 are received or held so that the plug portion 110 can push or drive or drive the substrate tray 200 to follow the direction of the horizontal direction of the rotating mechanism M. Rotate. It should be noted that the engagement of the insertion portion 110 and the recessed portion 210 in the present creation is a fit that can have a certain gap, and does not require a tight fit of the friction fit as in the prior art; in addition, the base in the present creation The sheet tray 200 is realized by supporting the second surface 202 of the substrate tray 200 in the vertical direction by the support surface 126 of the support portion 120, and thus, after the substrate tray 200 is placed over the support shaft 100, the concave portion is recessed. A gap of a certain size is allowed between the top surface 215 of the insertion portion 210 and the top surface 115 of the insertion portion 110 (of course, there may be no such gap), in other words, the insertion portion 110 protrudes outward along the extension surface 121 by a distance. (vertical distance between the extension surface 121 of the plug portion 110 and the top surface 115) that is less than or equal to the depth of the recess 210 recessed inwardly (the second surface 202 and the top surface 215 of the recess 210) Vertical distance between)).

Fig. 5 is a view showing the structure of a support shaft of another embodiment, the basic structure of which is the same as that of the embodiment of Fig. 4, except that the embodiment is provided with a mechanism on the support shaft for the convenience of installation and maintenance. Mounting holes. A hollow opening 118 is opened downward from the top surface 115 of the plug portion 110. 5A is a schematic cross-sectional view along the line B of FIG. 5, and the structure of the mechanical mounting hole 117 can be clearly seen in FIG. 5A. The inner surface of the mechanical mounting hole 117 is provided with a thread (in the dotted line frame), which can accommodate Fixing a bolt (not shown), when the support shaft is installed or the support shaft 100 is detached, the fixing of the support shaft 100 can be achieved by bolts, so that the movable support shaft 100 can be conveniently lifted, and the hand-held support shaft can be prevented from being attached to the mounting belt. Inconvenience. It is also clearly shown in FIG. 5A that the support table 125 extends from the extension surface 121 in a direction opposite to the main shaft portion by a certain height, and the support surface 126 is in contact with the partial surface of the second surface 202 of the substrate tray 200 to realize the substrate tray 200. Supporting, with this structure, the support portion 125 is disposed around the insertion portion 110, and a gap is formed between the other portion of the extension surface 121 and the second surface 202 of the substrate tray, and the heat of the substrate tray is reduced to be conducted downward by the support portion.

FIG. 5B is a plan view showing the support shaft 100 shown in FIG. 5. In FIG. 5B, the insertion portion 110 includes a vertical side surface 111 perpendicular to the extension surface 121, a top surface 115, and a vertical side surface 111. An arcuate side 112 between the top surfaces 115. In the present embodiment, the vertical side surface 111 includes a plurality of mutually parallel planes 1111 and a plurality of curved surfaces 1112 protruding in opposite directions. The plane 1111 and the curved surface 1112 define the shape of the insertion portion 110 as an ellipsoid. The design of the curved side surface 112 facilitates the mounting of the substrate tray 200 and the support shaft 100, facilitating the mating engagement of the insertion portion 110 with the recessed portion 210.

In the present creation, the support table provided on the support portion 120 can be in various embodiments. In the embodiments of FIGS. 4 and 5, the support table 125 is a circular ring structure surrounding the insertion portion 110. Any structure capable of achieving stable support for the substrate tray 200 during the rotation process belongs to the design concept of the present invention, and the annular support table 125 may be a continuous structure or a discontinuous structure. FIG. 6A illustrates an embodiment in which the support portion 120a includes an extension surface 121a and a plurality of support tables 125a disposed above the extension surface 121. The plurality of support tables 125a have support surfaces 126a on the same horizontal surface, To ensure stable support of the substrate tray, the discontinuous support table can effectively reduce the heat transfer area with the substrate tray, and reduce the temperature difference between the central area and the edge area of the substrate tray as much as possible. The shape of the support table 125a may be set in various forms, and FIG. 6B shows that the plurality of support tables 125b disposed on the extension surface 121b of the support portion 120b are cylindrical, and the plurality of support tables 125b have support surfaces 126b on the same horizontal surface to ensure Stable support for the substrate tray. In the embodiments disclosed in FIGS. 6A and 6B, the number of support stages 125a and 125b is not limited. Preferably, in order to ensure stable support of the substrate tray, the number of support stages is at least two, preferably Symmetrical distribution.

FIG. 7A is a schematic view showing a structure of a support shaft according to another embodiment. Similar to the above embodiment, the support shaft 100 includes a plug portion 110, a support portion 120 and a main shaft portion 130. The support portion 120 includes a support surface 124 and a self-supporting surface. The at least one insulated pipe 122 is recessed, and the insertion portion 110 is connected to the main shaft portion 130 and extends upward along the central portion of the support surface 124 by a certain height. In this embodiment, the heat insulating pipe 122 is an annular structure disposed around the plug portion 110, and functions to reduce the contact area between the support surface 124 and the substrate tray 200, and to minimize the heat diffusion of the substrate tray 200 to the support portion. The temperature difference between the central area of the small substrate tray and other areas ensures uniformity of the process above the substrate tray. The heat insulating pipe 122 may be a ring annular groove structure or a plurality of ring groove grooves surrounding the plug portion, and the one or more ring groove structures may be arranged continuously or intermittently. FIG. 7B is a vertical cross-sectional view showing the support shaft of FIG. 7A, which shows that the heat insulating pipe 122 is recessed downward from the support surface 124 to a certain depth to avoid contact with the second surface of the substrate tray, which is different from the previous embodiment. In the embodiment, the support surface 124 is disposed on both sides of the heat insulating pipe to ensure the support portion to support the substrate tray more stably while reducing the heat loss of the substrate tray. The structure of the mounting hole 117 shown in the figure is the same as that of the above embodiment, and is provided for the purpose of facilitating the installation movement or not, and will not be described herein.

Fig. 8A is a schematic view showing the structure of a support shaft for another embodiment in the reactor of Fig. 2. The main features of this embodiment are similar to those of the above embodiment, except that the heat insulating pipe 122a in the present embodiment is self. The plurality of recesses of the support surface 124a are downwardly disposed, that is, the heat insulating duct 122a is a discontinuous structure. As can be seen from the vertical sectional view of the support shaft of FIG. 8B, the heat insulating pipe 122a is recessed downward from the support surface 124a to a certain depth, and a plurality of discontinuous concave structures are formed on the support portion, and the heat insulation effect is consistent with the above description. . The shape and distribution of the insulated pipe 122a can be variously designed in the vertical section of the support shaft, and this embodiment is merely illustrative of one of them.

FIG. 9 is a schematic view showing a vertical sectional structure of a support shaft according to another embodiment. Unlike the embodiment shown in FIG. 8B, the heat insulating pipe 122b penetrates the upper and lower surfaces of the support portion to form a plurality of openings. Discontinuous structure.

As can be seen from the above, in the reactor provided by the present invention, on the one hand, the recessed portion of the substrate tray 200 has a horizontal cross-sectional area larger than the horizontal cross-sectional area of the plug portion 110 of the support shaft 100, and thus both There is a gap therebetween so that the insertion portion 110 can be easily inserted into the recess 210 and the two can be easily separated. In particular, the present invention provides an arc that is inclined from the vertical side 111 toward the top surface 115. The side 112 is such that the cross-section of the plug top surface 115 is smaller than the opening cross-section of the recess 210, thereby making it easier to insert the plug 110 into the recess 210, and, optionally, the plug 110 It is also possible to rotate a certain angle or a certain distance within the recess 210 so that the plug portion 110 has a specific position within the recess 210, in which some portions of the plug portion 110 are held against or Abutting or catching some portions of the inner peripheral wall 216 of the recessed portion 210, so that the plug portion 110 becomes a "drive mechanism" under the action of the rotating mechanism M, that is, the plug portion 110 can be horizontally Driving or pushing the recess 210 to rotate together; in addition, the creation The support shaft 100 provided is also provided with a support portion 120 similar to a "shoulder" or "support frame" structure, which provides a smooth support for the substrate tray 200 in the vertical direction. When the substrate tray 200 is placed over the support shaft 100 and subjected to the substrate processing, the rotational movement of the substrate tray 200 is achieved by the insertion portion 110 of the support shaft 100 pushing or driving the substrate tray 200 in the horizontal direction. The weight of the entire substrate tray 200 is smoothly carried by the support portion 120 in the vertical direction.

The reactor of the present invention has many advantages over the reactor of the prior art shown in Fig. 1. First, after the substrate tray 200 is placed on the support shaft 100, the entire substrate tray 200 is supported by the support portion. The annular stepped support surface 126 above the 120 extension surface is supported, so that the entire substrate tray 200 of the present invention does not swing left and right due to the instability of the center of gravity after being placed on the support shaft 100 and during the processing of the substrate; The loss of heat in the central region of the substrate tray through the support shaft can be significantly reduced. In addition, the rotation of the substrate tray 200 is achieved by the force (pushing force or abutting action) of the insertion portion 110 in the direction of the horizontal surface, so that there is no occurrence of "frictional slippage" in the prior art. In addition, after the mating portion 110 and the recessed portion 210 are coupled and engaged, the gap allows the plug portion 110 to thermally expand in a high-temperature processing environment without a certain gap therebetween. There is a problem in that the thermal expansion of the two in the prior art due to the frictional fit eventually causes the fragile substrate tray 200 to be broken by the expanded plug portion 110. Finally, the present setup also facilitates the instantaneous and in situ measurement of the specific location and temperature of the substrate within the closed reaction chamber 10 during substrate processing. As shown in Fig. 2, a speed sensor S is coupled to the support shaft 100. Since the speeds of the support shaft 100 and the substrate tray 200 provided by the present invention are the same during the rotation process, the rotation speed of the substrate tray 200 can be obtained by measuring the rotation speed of the support shaft 100, thereby being accurate. The relative position of each substrate during the rotation is calculated. With this accurate position, the pyrometer that measures the substrate temperature within the reaction chamber 10 can accurately measure and calculate the temperature of the substrate that is rotating at high speed in the reaction chamber.

In the foregoing reaction chamber 10, a heating means for heating the substrate on the substrate tray 200 is further disposed under the substrate tray 200. In order to achieve an effect of uniform heating of the substrate, a first heating device 6a and a second heating device 6b may be disposed under the substrate tray 200. Wherein, the first heating device 6a is disposed adjacent to the support shaft 100, for example, may be an annular heating device surrounding the periphery of the main shaft portion 130, the direction of which may be placed in a horizontal direction as shown, or may be set in a vertical direction. Surrounding the periphery of the main shaft portion 130 (not shown) and close to the support portion 120 to improve the portion of the substrate tray 200 that is in contact with the support portion 120 due to the blocking of the support portion 120 (i.e., the central portion of the substrate tray 200) is poorly heated. The second heating device 6b is disposed at the periphery of the first heating device 6a for providing heating to the edge region portion of the substrate tray 200. Preferably, the first heating means 6a and the second heating means 6b are respectively connected to a heating control signal to separately provide heating control.

The present invention is disclosed in the above preferred embodiments, but it is not intended to limit the present invention, and any person skilled in the art can make possible changes and modifications without departing from the spirit and scope of the present invention. The scope of protection shall be subject to the scope defined by the scope of patent application of this creation.

10‧‧‧Reaction chamber
100‧‧‧Support shaft
110‧‧‧Interface
111‧‧‧Vertical side
1111‧‧ plane
1112‧‧‧ curved surface
112‧‧‧ curved side
115, 215‧‧‧ top surface
117‧‧‧Mechanical mounting holes
118‧‧‧ openings
120, 120a, 120b‧‧‧ support
121, 121a, 121b‧‧‧Extended surface
122, 122b‧‧‧Insulated pipes
124, 124a, 126, 126a, 124b, 126b‧‧‧ support surface
125, 125a, 125b‧‧‧ support table
130‧‧‧Spindle Department
131‧‧‧First spindle
132‧‧‧Second spindle
140‧‧‧ heating device
200, 300‧‧‧ substrate tray
201‧‧‧ first surface
202‧‧‧ second surface
205‧‧‧ steps
210‧‧‧ recessed
216‧‧‧ inner wall
220‧‧‧洼坑
390‧‧‧ recessed part
395‧‧‧Single surface
400‧‧‧ Spindle
480‧‧‧Top
481‧‧‧ top surface
482‧‧‧ spindle wall
6a‧‧‧First heating unit
6b‧‧‧second heating unit
P‧‧‧Transport
II, BB‧‧‧ hatching
M‧‧‧Rotating mechanism
S‧‧‧Speed sensor
A‧‧‧ perspective

Other features, objects, and advantages of the present invention will become more apparent from the detailed description of the <RTIgt;

Figure 1 shows a pedestal-free reactor of the prior art.

Figure 2 is a schematic illustration of a front cross-sectional view of a reactor provided in accordance with the present teachings.

Fig. 3A is a perspective view showing the first surface of the substrate tray in the embodiment shown in Fig. 2.

Fig. 3B is a perspective view showing the second surface of the substrate tray in the embodiment shown in Fig. 2.

Fig. 4 is a perspective view showing the support shaft in the embodiment shown in Fig. 2.

Fig. 5 is a perspective view showing a support shaft in another embodiment.

Fig. 5A is a vertical sectional view showing the support shaft of the embodiment shown in Fig. 5.

Fig. 5B is a plan view showing the support shaft of the embodiment shown in Fig. 5.

Figure 6A is a perspective view of the support shaft in another embodiment.

Figure 6B is a perspective view of the support shaft in another embodiment.

7A and 7B are schematic views showing the structure of the support shaft in another embodiment.

8A and 8B are schematic views showing the structure of the support shaft in another embodiment.

Fig. 9 is a schematic vertical sectional view showing a support shaft in another embodiment.

110‧‧‧Interface

111‧‧‧Vertical side

1111‧‧ plane

1112‧‧‧ curved surface

112‧‧‧ curved side

115‧‧‧ top surface

120‧‧‧Support

121‧‧‧Extended surface

125‧‧‧Support table

126‧‧‧Support surface

118‧‧‧ openings

Claims (25)

A support shaft for use in a chemical vapor deposition or epitaxial growth reactor for supporting a substrate tray and rotating it, the support shaft comprising: a spindle portion; a support portion opposite to one end of the spindle portion Connecting and extending outwardly along the periphery of the main shaft portion, the support portion includes an extension surface; and a plug portion connected to the main shaft portion and extending along the extension surface in a direction opposite to the main shaft portion; One or more support platforms are disposed around the extension portion around the extension surface, and the support table includes a support surface for supporting the substrate tray, the support surface being higher than the extension surface. The support shaft of claim 1, wherein the insertion portion includes a top surface and an outer side surface, the outer side surface including a first outer side surface and a second outer side surface, wherein the first outer side surface is vertical Provided above the extension surface, the second outer side surface is disposed as a curved surface inclined from the first outer surface toward the top surface. The support shaft according to claim 1, wherein the insertion portion is located in a central region of the extension surface and is non-cylindrical in shape. A support shaft according to claim 2, wherein the first outer side surface comprises a set of mutually parallel planes and a plurality of arcuate surfaces projecting in opposite directions. The support shaft according to claim 1, wherein the support base is an annular structure disposed around the insertion portion, and the annular support base is a continuous or intermittent structure. The support shaft according to claim 1, wherein the support table is a plurality of protrusions disposed around the insertion portion. The support shaft according to claim 1, wherein the height of the support table is smaller than the height of the insertion portion. The support shaft according to claim 1, wherein the main shaft portion includes a first main shaft portion connected to the support portion and a second main shaft portion connected to the other end of the first main shaft portion, the first main shaft The diameter of the portion is smaller than the diameter of the second main shaft portion. The support shaft according to claim 1, wherein the support shaft is provided with a mechanical mounting hole, the mechanical mounting hole is provided with an opening on a top surface of the insertion portion, and extends along a direction of the main shaft portion. depth. A substrate tray matched with a support shaft according to claim 1, wherein the substrate tray comprises a first surface and a second surface, wherein the first surface is used for placing a plurality of substrates to be processed, a central portion of the second surface is provided with a recess recessed inwardly, the recess forming a top surface inside the substrate tray, the top surface of the recess being non-circular in shape, the recess The plug portion for receiving the support shaft, the second surface being at least partially in contact with the support surface of the support table. The substrate tray of claim 10, wherein a ratio of a recessed depth of the recess to a thickness of the substrate tray ranges from 1/2 to 3/4. The substrate tray of claim 10, wherein a step is provided around the substrate tray, the step is for accommodating a robot arm for facilitating access to the substrate tray. A chemical vapor deposition or epitaxial layer growth reactor, the reactor comprising a substrate tray and a support shaft thereof for supporting the substrate tray and driving the rotation thereof, the support shaft comprising: a spindle portion; a support portion connected to one end of the main shaft portion and extending outward along a periphery of the main shaft portion, the support portion including an extension surface, and a plug portion connected to the main shaft portion and along the extension surface Extending a height in a direction opposite to the main shaft portion; wherein the extension surface is provided with one or more support platforms around the insertion portion, the support platform includes a support surface for supporting the substrate tray, wherein the support surface is higher than the height The substrate tray comprises a first surface and a second surface, wherein the first surface is used for placing a plurality of substrates to be processed, and the central surface of the second surface is provided with an inward depression a recessed portion forming a top surface inside the substrate tray, the top surface of the recessed portion being non-circular in shape, the recessed portion for receiving the plug portion of the support shaft The second surface to Portion in contact with the supporting surface of the support base. The reactor of claim 13, wherein the plug portion includes a top surface and an outer side surface, the outer side surface including a first outer side surface and a second outer side surface, wherein the first outer side surface is vertical Provided above the extension surface, the second outer side surface is disposed as a curved surface inclined from the first outer surface toward the top surface. The reactor of claim 13, wherein the plug portion is located in a central region of the extension surface and is non-cylindrical in shape. The reactor of claim 14, wherein the first outer side comprises a set of mutually parallel planes and a plurality of arcuate surfaces projecting in opposite directions. The reactor of claim 13, wherein the support table is an annular structure or a plurality of protrusions disposed around the insertion portion, and the annular support table is a continuous or intermittent structure. The reactor of claim 13, wherein the main shaft portion includes a first main shaft portion connected to the support portion and a second main shaft portion connected to the other end of the first main shaft portion, the first main shaft portion The diameter of the portion is smaller than the diameter of the second main shaft portion. The reactor of claim 13, wherein the support shaft is provided with a mechanical mounting hole, the mechanical mounting hole is provided with an opening on the top surface of the plug portion, and extends along the direction of the main shaft portion A depth. The reactor of claim 13, wherein the recessed depth of the recessed portion of the second surface of the substrate tray and the thickness ratio of the substrate tray are in the range of 1/2 to 3/4. A support shaft for use in a chemical vapor deposition or epitaxial growth reactor for supporting a substrate tray and rotating it, the support shaft comprising: a spindle portion; a support portion opposite to one end of the spindle portion Connecting and extending outward along the periphery of the main shaft portion, the support portion includes a support surface; a plug portion connected to the main shaft portion and extending along a central portion of the support surface in a direction opposite to the main shaft portion Wherein, the support portion is provided with one or a plurality of heat insulating pipes recessed downward from the support surface. The support shaft according to claim 21, wherein the heat insulating pipe is an annular structure disposed around the plug portion, and the annular structure is continuously or intermittently disposed. The support shaft of claim 22, wherein the insulated pipe is one or more annular grooves surrounding the plug. The support shaft according to claim 21, wherein the heat insulating pipe is a plurality of discontinuous concave structures. The support shaft according to claim 24, wherein the plurality of discontinuous heat insulating pipes are disposed through the support portion.