TWM496843U - Chemical vapor deposition apparatus and rotating shaft - Google Patents

Description

Chemical vapor deposition device and rotating shaft

The present invention relates to the manufacture of semiconductor devices, and more particularly to a device for growing an epitaxial layer or performing chemical vapor deposition on a substrate such as a substrate and a rotating shaft.

Chemical vapor deposition (CVD) reactors, particularly metal organic chemical vapor deposition (MOCVD) reactors, are the primary equipment for producing optical components such as light emitting diode (LED) epitaxial wafers. Both typical chemical vapor deposition (CVD) and metal organic chemical vapor deposition (MOCVD) reactors require a tray or susceptor on which the substrate is placed during deposition to provide a uniform deposition of the substrate. As shown in FIG. 1, a typical MOCVD reactor structure includes a processing chamber 100 including a rotating shaft 110, and a substrate tray 120 on which a plurality of substrates 105 are mounted mounted on the top end of the rotating shaft 110. The heating device 103 is located below the substrate tray 120 and disposed around the rotating shaft 110. The top of the processing chamber includes a gas showerhead 101 for uniformly distributing the gas from the first reactive gas source 41 through the conduit 43 and the gas from the second reactive gas source 42 through the conduit 44 to the substrate tray within the processing chamber Above 120. The gas showerhead 101 also includes a cooling device that delivers coolant from the coolant source 50 to the showerhead through conduit 51 for cooling loops to control the temperature of the gas showerhead. An extraction device 106 is also included below the processing chamber to control the pressure inside the processing chamber and to remove exhaust gases generated during the reaction.

In the MOCVD reaction process, not only the gas type and gas flow have a great influence on the deposition effect, but also the temperature distribution is an important factor affecting the formation of the crystal structure. Thus, during the rotation process, the temperature and the thickness of the deposited layer at different locations above the substrate tray need to be monitored on the fly. To analyze the temperature or the thickness of the deposited layer, it is necessary to (?) accurately rotate the position information of the substrate tray, otherwise it is impossible to judge which temperature is detected on the substrate tray in the high-speed rotation. The easiest way to obtain accurate information on the rotational position is to calculate the number of revolutions and angle of rotation of the rotating shaft 110 in the atmosphere outside the processing chamber, and then obtain the angle and position of rotation of the substrate tray within the processing chamber. Accurate position information can be collected using a fixed connection of the substrate tray and the rotating shaft, but this fixed connection brings other problems, such as misalignment or misalignment at any position in the substrate tray and the rotating shaft. The final tray will not rotate on the horizontal plane, which will affect the stability of the machine and the processing effect. At the same time, the substrate tray and the rotating shaft are fixedly connected, which increases the difficulty of taking out the substrate after the deposition is completed, and increases the reaction process. The complexity.

Based on the above deficiencies, a solution for driving the rotation of the substrate by friction is proposed in the prior art, such as the pedestal-free MOCVD reactor provided by US Pat. No. 6,506,252. In this prior art, there is a strip-shaped frictional contact surface between the rotating shaft and the substrate tray. If the initial substrate tray is not horizontal during the rotation, the entire substrate tray is rotated at high speed due to gravity. Will spontaneously adjust to a horizontal state. However, such a frictional contact drive structure is also problematic in that the relative displacement between the substrate tray and the rotary shaft occurs once the acceleration is excessive during the rotational acceleration and deceleration. Once the displacement occurs, the detected rotation angle of the rotating shaft deviates from the rotational position of the substrate tray inside the processing chamber, and the rotational position of the internal tray cannot be accurately determined. Specifically, the substrate tray is supported by the rotating shaft in the MOCVD reaction chamber and is driven to rotate. The rotating shaft enters the vacuum reaction chamber by the vacuum rotary sealing mechanism, so that the rotating position of the rotating shaft of the processing chamber is monitored, and the rotating position of the current tray can be obtained, thereby positioning and collecting information on the special position on the tray. When the rotary shaft rotates, the frictional force at the contact of the rotary shaft with the substrate tray drives the tray to rotate. Since the rotating shaft and the substrate tray are in circular contact, the rotation direction has no freedom limit, so the rotating shaft and the substrate tray can be relatively rotated. During the running, especially during acceleration and deceleration, the tray and the rotating shaft Relative rotation is easy to occur, and the relative position of the rotation is random. At this time, the rotation position of the rotation axis does not reflect the rotation position of the current tray, so the special position on the tray cannot be positioned and information is collected.

Therefore, there is a need in the art for an improved chemical vapor deposition apparatus comprising a structure for maintaining a rotational rotation of a rotating shaft in synchronization with a substrate tray, which ensures synchronous rotation of the rotating shaft and the substrate tray, and is monitored by monitoring the rotational position of the rotating shaft. The rotating position of the tray to monitor the special position on the tray.

In order to solve the above technical problems, the present invention provides a chemical vapor deposition apparatus including a processing chamber including: a rotating shaft including a rotating main shaft and connected to one end of the rotating main shaft, And a support portion extending outwardly along the periphery of the rotating main shaft, the support portion includes a support surface; the support surface is provided with a recess; a substrate tray, the substrate tray includes an upper surface and a lower surface, the lower surface of the substrate tray is provided with a convex portion; the substrate tray is detachably placed on the support portion, in this position, the support surface of the support portion and the substrate tray The surrounding area of the raised portion contacts to support the substrate tray, and the raised portion of the lower surface and the recessed portion on the supporting surface are engaged or abutted against each other to generate a force to drive or push the rotation The shaft and the substrate tray rotate together.

Preferably, the raised portion is cylindrical or square cylindrical or elliptical or triangular cylindrical or other regular or irregular cylindrical shape.

Preferably, the triangular prism-shaped, square-column recessed portion and the corner of the convex portion are arcuate chamfers.

Preferably, the supporting surface is a circular shape, and the concave portion is located at a position of a center of the supporting surface or a position deviating from a center of the circle.

Preferably, two or more of the recessed portions are disposed on the supporting surface, and a corresponding number of the matching convex portions are disposed in a lower surface of the substrate tray.

Preferably, the shape and size of the two or more recesses on the support surface are the same or different.

Preferably, a concave portion is disposed on the supporting surface, and two or more convex portions are disposed in a lower surface of the substrate tray, and the concave portion is matched with a plurality of the convex portions. .

Preferably, the recess on the support surface extends toward the edge of the support surface, and at least one notch is formed at the edge of the support surface.

Preferably, a gap is provided between the convex side surface of the convex portion and the concave side surface of the concave portion, and the gap is not less than 0.01 mm.

Further, the present invention also discloses a rotating shaft for a chemical vapor deposition apparatus, comprising a rotating main shaft and a supporting portion connected to one end of the rotating main shaft and extending outward along the periphery of the rotating main shaft, The support portion includes a support surface; the support surface is provided with a recessed portion.

An advantage of the present invention is that in order to maintain the synchronous rotation of the rotating shaft and the substrate tray, a concave portion is provided on the supporting surface of the rotating shaft, and a convex portion that is engaged with the concave portion is disposed on the lower surface of the substrate tray, The substrate tray and the rotating shaft are synchronously moved by the concave side and the convex side of the concave portion and the convex portion abutting each other. By monitoring the rotational position of the outdoor shaft of the processing chamber, the rotational position of the current tray can be known, thereby positioning and collecting information on the special position on the substrate tray.

The specific embodiments of the present invention will be further described by the following examples and accompanying drawings.

The present invention discloses a chemical vapor deposition apparatus, and the above-described objects, features and advantages of the present invention will be more apparent and understood. The specific embodiments of the present invention will be described in detail below with reference to the accompanying drawings and embodiments.

The chemical vapor deposition apparatus provided by the present invention comprises a processing chamber in which a rotating shaft and a substrate tray are disposed, and the substrate tray is detachably placed on and supported by the rotating shaft, the rotating shaft and the substrate tray The utility model is provided with a structure for maintaining the synchronous rotation of the two, which can be matched with each other to ensure the synchronous rotation of the rotating shaft and the substrate tray, and the monitoring of the rotational position of the rotating shaft can be realized that the substrate tray is in the processing chamber. The rotational position of the substrate for position measurement or data monitoring at certain locations on the substrate tray or on the substrate above it. The chemical vapor deposition device provided by the present invention can realize self-balancing of the substrate tray during rotation, and can also keep the rotating shaft and the substrate tray rotate synchronously to prevent relative sliding of the two.

The specific implementation of the present invention will be described below with reference to the accompanying drawings. It should be noted that both the rotating shaft 110 and the substrate tray 120 illustrated in FIGS. 2a to 4b below are the rotating shaft 110 and the substrate tray 120 in the processing chamber 100 of the chemical vapor deposition apparatus shown in FIG. Improvements, therefore, for the sake of brevity, the processing chamber 100 of the chemical vapor deposition apparatus is not illustrated in Figures 2a to 4b, only the modified rotating shaft 110 and the substrate tray 120 are shown therein. It should be noted that the processing chamber 100 in each of the embodiments described below includes at least one rotating shaft 110 on which the substrate tray 120 is detachably placed, the substrate tray 120 being at least partially received by the rotating shaft 110. The support and the substrate tray 120 are rotated about the central axis of the rotary shaft 110 under the rotational driving of the rotary shaft 110. In addition to these, the above-described structure which can keep the substrate tray 120 and the rotating shaft 110 rotated in synchronization is also provided.

2a-2g are schematic views showing the structure of a rotating shaft and a substrate tray in the chemical vapor deposition apparatus of the first embodiment provided by the present invention. As shown in FIG. 2a, the rotating shaft 110 includes a rotating main shaft 111 and a supporting portion 113 extending outward along a periphery of one end of the rotating main shaft 111. The supporting portion 113 includes a supporting surface 116. The supporting surface 116 is provided with a recess. FIG. 2b shows a schematic structural view of a substrate tray 120. The substrate tray 120 includes an upper surface 121 and a lower surface 122. The lower surface 122 is adjacent to the support portion 113, and the lower surface 122 is provided with a convex portion 124. The 124 can be mated with the recessed portion 114 to realize the synchronous rotation of the substrate tray 120 by the rotating shaft 110. The support portion 113 is located above the rotating main shaft 111 and has a diameter larger than the diameter of the rotating main shaft 111, and is integrally provided or detachably provided with the rotating main shaft 111. The supporting portion 113 is kept fixed to the rotating main shaft 111 during the rotation. In the present embodiment, the recessed portion 114 forms a recessed side surface 117 inside the support portion 113. The recessed portion 114 has a recessed depth greater than or equal to the thickness of the support portion 113. To ensure a secure connection of the support portion 113 and the substrate tray 120 during rotation, Preventing the substrate tray 120 from being thrown out due to the rotation speed being too fast, the recess depth of the recess portion 114 is generally set to be larger than the thickness of the support portion 113, that is, the recessed side surface 117 extends downward along the support portion 113 to a certain depth inside the rotating main shaft 111, A recessed surface 115 is formed inside the rotating main shaft 111. As the convex portion 124 engaged with the engaging portion 124, the surrounding surrounding portion 126 can be in contact with the supporting surface 116 when the substrate tray 120 is placed on the supporting portion 113, and the supporting of the substrate tray 120 is realized by the supporting surface 116. The raised portion 124 also includes a raised side 127. In the embodiment, the convex portion 124 has an elliptical cylindrical shape, and the horizontal cross section of the concave portion 114 is elliptical. It should be understood that the raised portion 124 and the recessed portion 114 may also be provided in other shapes as long as the shape and size of the raised portion 124 can be ensured to be at least partially or wholly accommodated within the recessed portion 114. For example, the raised portion 124 is cylindrical or square cylindrical or elliptical or triangular cylindrical or other regular or irregular cylindrical shape. In other embodiments, the corners of the triangular prism, the square cylinder or the rectangular cylinder may be curved chamfers.

2c is a cross-sectional view showing the assembled state of the rotating shaft 110 and the substrate tray 120 in the present embodiment. As shown, the substrate tray 120 surrounds the convex portion 124 in a state where the rotating shaft 110 is combined with the substrate tray 120. The region 126 is in contact with the support surface 116 of the support portion 113, and the support portion 113 supports the substrate tray 120 through the support surface 116. At this time, the convex portion 124 of the substrate tray 120 is embedded in the recess portion 114 of the support surface 116. The support portion 113 supports the substrate tray 120 through the support surface 116 and drives the substrate tray 120 to rotate. Since the rotational position of the outer rotating shaft 110 of the processing chamber 100 needs to be monitored in the chemical vapor deposition processing apparatus, the special position on the substrate tray 120 is positioned and information is collected. When the rotating shaft 110 rotates, since the frictional force of the supporting surface 116 and the region 126 surrounding the convex portion 124 is limited, and the rotational directions of the two are limited, the rotating shaft 110 and the substrate tray 120 are relatively rotatable. During operation, especially during acceleration and deceleration, relative rotation between the substrate tray 120 and the rotating shaft 110 is apt to occur, and the relative position of the rotation is random. In the present embodiment, a recessed portion 114 is provided on the support surface 116, and a raised portion 124 matching the recessed portion 114 is provided on the lower surface 122 of the substrate tray 120, and the card passes through the recessed portion 114 and the raised portion 124. The rotating shaft 110 is coupled to drive the synchronous rotation of the substrate tray 120, thereby completing the positioning of the special position on the substrate tray 120 and collecting information.

Specifically, the protrusion 124 disposed on the lower surface 122 is detachably inserted into and inserted into the recess 114. To facilitate separation and insertion, as long as the shape and size of the protrusion 124 are ensured to be The shape and/or size of the raised portion 124 and the recessed portion 114 may be set to other shapes and sizes at least partially or completely at least partially or completely. For example, the cross-sectional dimension of the recessed portion 114 is convex. The cross-sectional dimension of the starting portion 124 is slightly larger so that there is a gap between the two. The gap is allowed to exist in the vertical direction and/or the horizontal direction of the convex portion 124 and the concave portion 114, wherein the gap in the vertical direction is the gap between the convex surface 125 of the convex portion 124 and the concave surface 115 of the concave portion, The gap in the horizontal direction is the gap between the convex side surface 127 of the convex portion 124 and the inner concave side surface 117 of the concave portion 114. The size of the gap can be adjusted according to the actual design requirements. If the gap is designed to be too small, it is not only inconvenient to plug and separate, but also the substrate tray 120 placed at a low temperature cannot be cooled due to thermal expansion and contraction during high temperature reaction. The substrate tray 120 is taken out, and the typical gap between the two can be selected to be not less than 0.01 mm. In the process, when the rotating shaft 110 starts to rotate or accelerates or decelerates during the rotating process, a relative rotational displacement occurs between the substrate tray 120 and the rotating shaft 110, causing the recessed portion 114 to move within the aforementioned gap. Until the concave side surface 117 of the recessed portion 114 and the convex side surface 127 of the convex portion 124 are in contact with each other or both abut each other, thereby preventing further movement of the recessed portion 114, and at the same time, realizing the substrate tray 120 and rotating The shafts 110 are no longer relatively moved, but instead achieve a synchronous rotation. As can be seen from the foregoing description, the value of the gap is related to the degree of sliding between the substrate tray 120 and the rotating shaft 110. As long as the gap size is within a limited range, the position detection accuracy of the substrate tray 120 in the processing chamber 100 can be maintained while ensuring that the substrate tray 120 and the support portion 113 of the rotating shaft 110 can be freely picked up and realized. Balance function. The gap of the present creation is greater than or equal to 0.01 mm and less than 5 mm, and preferably the gap is not less than 0.05 mm and not more than 0.5 mm. As can be seen from FIG. 2c, in order to ensure that the rotating shaft 110 and the substrate tray 120 are rotated at a relatively high speed, the substrate tray 120 does not disengage from the rotating shaft 110, and the convex surface 125 of the convex portion 124 and the concave portion 114 are The recessed surface 115 is located below the horizontal line of the lower surface 119 of the support portion 113 to ensure the safety and stability of the rotation of the substrate tray 120.

2d and 2e are schematic views showing a modified structure of the embodiment, which is different from the above embodiment in that the horizontal portion of the recessed portion 114a provided on the supporting surface 116a of the rotating shaft 110a is strip-shaped and elliptical, correspondingly, The raised portion 124a of the substrate tray 120a is shaped in a stripe shape that matches the recessed portion 114a.

2f and 2g show another modified structural view of the embodiment, which is different from the above embodiment in that the convex portion 124b of the substrate tray 120b has a triangular prism shape, and the concave portion of the rotating surface 110b is supported on the surface 116b. 114b corresponds to or matches the shape of the raised portion 124b. The corners of the recessed portion 114b and the raised portion 124b may be rounded arcuate chamfers. The recessed portion 114b and the raised portion 124b may also be cylindrical. The recessed portion 114b and the raised portion 124b are located on the support surface 116b and the lower surface, respectively, in consideration of a special cylindrical structure. The position of the 119b deviating from the center of the circle can realize the action of the recessed portion 114b to drive the rotation of the boss portion 124b. In addition to the several shapes listed above, the shape of the recessed portion 114 and the raised portion 124 may also be trapezoidal, strip-shaped, and other irregular shapes as long as the recessed portion 114 and the raised portion 124 match each other and can be secured on the axis of rotation. When the 110 is rotated, the recessed portion 114 can ensure the synchronous rotation of the convex portion 124, that is, the protection range of the present invention.

It should be noted that the support portion 113 and the substrate tray 120 in the various chemical vapor deposition devices provided by the present invention are a non-fixed connection, that is, the substrate tray 120 is detachably disposed during the processing of the processing chamber 100. Placed on the rotating shaft 110, the supporting portion 113 of the rotating shaft 110 detachably supports the substrate tray 120, and the substrate tray 120 is supported by the supporting surface 116 of the supporting portion 113, and then passes through the convex portions 124 and the concave portions abutting each other. 114 is used to generate a force to drive or push the rotating shaft 110 and the substrate tray 120 to rotate together about the central axis of the rotating shaft 110. At the same time, the raised portion 124 of the substrate tray 120 and the recessed portion 114 of the support portion 113 cooperate to maintain the substrate tray 120 and the rotating shaft 110 to rotate in synchronization. At the end of the process, the substrate tray 120 can be separated directly from the rotating shaft 110 and removed from the processing chamber 100.

3a-3f are schematic views showing the structure of the rotating shaft 210 and the substrate tray 220 in the chemical vapor deposition apparatus of the second embodiment provided by the present invention. The structure of the rotating shaft 210 and the substrate tray 220 is similar to that of the first embodiment except that two or more recessed portions 214 are provided on the support portion 213 of the rotating shaft 210, as shown in Figs. 3a and 3b, the supporting portion Two recessed portions 214 are disposed on the second surface of the corresponding substrate tray 220. The recessed portions 214 may be disposed near the center of the support portion 213, or may be disposed near the edge of the support portion 213. The position of the recessed portion 214 may be equal to the thickness of the support portion 213, that is, the support surface 216 and the lower surface 219 of the support portion, at this time, when the recessed portion 214 is disposed at a position close to the edge of the support portion 213. The lower surface 222 of the substrate tray 220 is disposed at a position corresponding to the convex portion 224 having a convex height greater than the concave depth. Since the diameter of the supporting portion 213 is larger than the diameter of the rotating main shaft 211, the convex portion 224 may pass through the lower surface 219 of the supporting portion 213. The substrate tray 220 is ensured to be in fixed connection with the rotating shaft 210 when rotated at a high speed. When the two recessed portions 214 are disposed at a position close to the center of the support portion 213, according to the above embodiment, preferably, the recessed portion 214 has a recessed depth greater than the thickness of the support portion 213, and the recessed portion 214 forms a recessed side surface 217 that is perpendicular to The direction of the support surface 216 extends downward through the support portion 213 and extends a certain distance along the main axis of rotation. The side surface 227 of the convex portion 224 abuts against the concave side surface 217 of the recess portion 214 when rotating, and rotates together. Correspondingly, the convex portion 224 is disposed at a position close to the center of the lower surface of the substrate tray 220 to achieve the snap matching with the concave portion 214. The principle and manner of the specific rotation of the rotating shaft 210 and the substrate tray 220 are the same as those of the above embodiment, and details are not described herein again.

Figure 3c shows another recess 214' that can be matched to the raised portion 224 of Figure 3b. The recess 214' is elongated elliptical, although the number of recesses 214' is one, it can accommodate two The convex portion 224 realizes the matching engagement with the convex portion 224 and can maintain the synchronous rotation of the rotating shaft 210' and the substrate tray 220.

3d and 3e are schematic views showing the structure of the rotating shaft 210a and the substrate tray 220a according to another modification of the embodiment, which is different from the above in that three recessed portions 214a are provided on the supporting portion 213a of the rotating shaft 210a, corresponding to The lower surface of the substrate tray 220 is provided with three convex portions 224a. The concave portion 214a may be disposed near the center of the support portion 213a, or may be disposed near the edge of the support portion 213a, and disposed near the center of the support portion 213a. The position and the position of the edge near the edge of the support portion 213a are as described in the embodiment of FIGS. 3a and 3b, and will not be described herein. It should be noted that in the embodiment disclosed in FIGS. 3a-3e, if the support surface 213 is One or more recessed portions are provided, and the shape and size of the recessed portions may be the same or different. In addition, the plurality of recessed portions may be distributed in the central region of the support portion 213 or in the edge region of the support portion, as long as The matching raised portion 224 can be engaged with it to realize synchronous rotation of the rotating shaft and the substrate tray.

Figure 3f discloses a rotating shaft 210a' that can be mated with the substrate tray of Figure 3e. Since the embodiment disclosed in Figure 3e is three raised portions 224a, the recessed portion of Figure 3f has a triangular cross-section, three convex The starting portion 224a can be engaged with the recessed portion 214a' to achieve synchronous rotation of the rotating shaft and the substrate tray.

4a and 4b disclose a schematic structural view of a third embodiment, which differs from the above embodiment in that the recessed portion 314 of the rotating shaft 310 extends from the central portion of the supporting portion toward the edge and forms a notch 318 at the edge. The notch 318 penetrates or does not penetrate the lower surface 319 of the support portion 313, and the recessed portion 314 may have a recess depth equal to the depth of the notch 318 or may be greater than the depth of the notch 318. Further, the number of the notches 318 may be one or more, and if it is one or more, it may be uniformly distributed on the support portion or may be unevenly distributed. An extension 328 matching the notch is disposed on the corresponding convex portion 324 of the substrate tray 320 to realize synchronous rotation of the rotating shaft and the substrate tray.

The present invention is disclosed in the above preferred embodiments, but it is not intended to limit the present invention, and any person skilled in the art can make possible changes and modifications without departing from the spirit and scope of the present invention. The scope of protection shall be subject to the scope defined by the scope of patent application of this creation.

41‧‧‧First reaction gas source
42‧‧‧Second reaction gas source
43, 44, 51‧‧‧ pipeline
50‧‧‧ Coolant source
100‧‧‧Processing chamber
101‧‧‧ gas sprinkler
103‧‧‧ heating device
105‧‧‧Substrate
106‧‧‧Exhaust device
110‧‧‧Rotary axis
111‧‧‧Rotating spindle
113‧‧‧Support
114, 114a‧‧‧Depression
115‧‧‧ recessed surface
116, 116a‧‧‧ support surface
117‧‧‧ recessed side
119‧‧‧ lower surface
120‧‧‧Substrate tray
121‧‧‧ upper surface
122‧‧‧ lower surface
124, 124a‧‧‧ raised parts
125‧‧ ‧ raised surface
126‧‧‧ area
127‧‧‧ raised side
210, 210', 210a‧‧‧ rotating shaft
211‧‧‧Rotating spindle
213, 213a‧‧ ‧ support
214, 214', 214a, 214a'‧‧‧ recessed
216‧‧‧Support surface
217‧‧‧ recessed side
219‧‧‧ lower surface
220, 220a‧‧‧ substrate tray
222‧‧‧ lower surface
224, 224a‧‧ ‧ raised parts
313‧‧‧Support
314‧‧‧Depression
318‧‧‧ gap
319‧‧‧ lower surface
328‧‧‧Extension

Other features, objects, and advantages of the present invention will become more apparent from the detailed description of the accompanying drawings.

The following drawings constitute a part of the specification, and together with the specification, various embodiments are illustrated to explain and clarify the purpose of the present invention. The following figures do not depict all of the technical features of the specific embodiments, nor the actual size and true scale of the components. 1 is a schematic view showing the structure of a chemical vapor deposition reactor; FIGS. 2a to 2g are views showing the structure of a rotary shaft and a substrate tray of the first embodiment; and FIGS. 3a to 3f are views showing the rotary shaft of the second embodiment. And a substrate tray structure schematic view; Figures 4a-4b show a schematic view of the structure of the rotary shaft and the substrate tray of the third embodiment.

210’‧‧‧Rotary axis

214’‧‧‧Depression

Claims (10)

A chemical vapor deposition apparatus includes a processing chamber, the processing chamber including: a rotating shaft, the rotating shaft includes a rotating main shaft and is coupled to one end of the rotating main shaft and along the periphery of the rotating main shaft a support portion extending from the outside, the support portion includes a support surface; the support surface is provided with a recess; a substrate tray, the substrate tray includes an upper surface and a lower surface, the substrate a lower surface of the tray is provided with a convex portion; the substrate tray is detachably placed on the support portion, and in this position, the support surface of the support portion and the area around the convex portion of the substrate tray Contacting to support the substrate tray, the raised portion of the lower surface and the recessed portion on the support surface are engaged or abutted against each other to generate a force to drive or push the rotating shaft and the substrate The trays rotate together. The chemical vapor deposition apparatus of claim 1, wherein the raised portion is cylindrical or square cylindrical or elliptical or triangular, or other regular or irregular cylindrical shape. The chemical vapor deposition apparatus of claim 2, wherein the corners of the triangular prism, the square pillar, and the convex portion are arcuate chamfers. The chemical vapor deposition apparatus of claim 1, wherein the support surface is a circle, and the recess is located at a position of a center of the support surface or a position deviating from a center of the circle. The chemical vapor deposition apparatus of claim 1, wherein the support surface is provided with two or more of the recesses, and the lower surface of the substrate tray is provided with a corresponding number of mutually matching said Raised portion. The chemical vapor deposition apparatus of claim 5, wherein the two or more recesses on the support surface are the same or different in shape and size. The chemical vapor deposition apparatus of claim 1, wherein the support surface is provided with a recess, and the lower surface of the substrate tray is provided with two or more protrusions, and the recess is A plurality of the raised portions are matched to each other. The chemical vapor deposition apparatus of claim 1, wherein the recessed portion on the support surface extends toward an edge of the support surface, and at least one notch is formed at an edge of the support surface. The chemical vapor deposition apparatus according to any one of claims 1 to 8, wherein a gap is provided between a convex side surface of the convex portion and a concave side surface of the concave portion. The gap is not less than 0.01 mm. A rotating shaft for a chemical vapor deposition apparatus includes a rotating main shaft and a supporting portion connected to one end of the rotating main shaft and extending outwardly along a periphery of the rotating main shaft, the supporting portion including a support a face; the support surface is provided with a recess.