TWM508791U - Package substrate and chip package structure - Google Patents
Package substrate and chip package structure Download PDFInfo
- Publication number
- TWM508791U TWM508791U TW103220392U TW103220392U TWM508791U TW M508791 U TWM508791 U TW M508791U TW 103220392 U TW103220392 U TW 103220392U TW 103220392 U TW103220392 U TW 103220392U TW M508791 U TWM508791 U TW M508791U
- Authority
- TW
- Taiwan
- Prior art keywords
- layer
- conductive
- disposed
- package substrate
- wafer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
本新型創作是有關於一種封裝基板,且特別是有關於一種無核層封裝基板以及使用此封裝基板的晶片封裝結構。The present invention relates to a package substrate, and more particularly to a coreless package substrate and a chip package structure using the package substrate.
近年來,隨著科技產業日益發達,電子產品例如筆記型電腦(notebook computer,NB)、平板電腦(tablet computer)與智慧型手機(smart phone)等已大量地應用在日常生活中。電子產品的型態與使用功能越來越多元,因此應用於電子產品中的線路板(circuit board)以及相關的封裝結構也在相關技術中扮演重要的角色。為了增加線路板的應用,許多不同種類的電子元件,例如是晶片,可以藉由適用的封裝技術(package technology)配置在線路板上,以形成晶片封裝結構,並增加其使用功能。In recent years, with the development of the technology industry, electronic products such as notebook computers (NB), tablet computers, and smart phones have been widely used in daily life. The types and functions of electronic products are becoming more and more diverse. Therefore, circuit boards and related packaging structures used in electronic products also play an important role in related technologies. In order to increase the application of the circuit board, many different kinds of electronic components, such as wafers, can be disposed on the circuit board by a suitable package technology to form a chip package structure and increase its use function.
此外,為滿足半導體晶片封裝高積集度(integration)以及微型化(miniaturization)的封裝需求,以供更多的主被動元件級線路載接,半導體晶片封裝結構的基板逐漸由雙層演變為多層(multi-layer),以使得在有限的空間下運用層間連接技術 (interlayer connection),以擴大半導體封裝基板上的有效線路佈局面積,以滿足高線路密度的積體電路(integrated circuit)。In addition, in order to meet the packaging requirements of semiconductor chip package high integration and miniaturization, for more active and passive component level lines, the substrate of the semiconductor chip package structure gradually evolves from two layers to multiple layers. (multi-layer) to enable the use of inter-layer connection techniques in a limited space (interlayer connection) to expand the effective circuit layout area on the semiconductor package substrate to meet the high circuit density integrated circuit.
如圖1所示,在目前封裝基板的製作上,一般是由一核層12開始,接著於核層12的上下表面形成線路層15及介電層16以完成一核心基板。然後,再經由線路增層技術完成符合設計應用需求的增層基板18,並且於部分暴露的線路層15上塗覆防焊層17。然而,核層12的通孔13a及接墊13b由於高深寬比(aspect ratio)的限制,限縮了在有限的基板厚度下的有效佈線空間。換言之,依此製作方法製作的多層基板,雖可增加佈線空間,但是無法有效減少整體封裝結構厚度,而不利於晶片封裝結構的薄型化與微小化。特別是,當將前述的封裝基板10應用在晶片封裝結構上,將增加整體裝置的厚度,而無法符合行動電子裝置薄型化與微小化的組裝需求與發展趨勢。As shown in FIG. 1, in the fabrication of the current package substrate, generally starting from a core layer 12, a circuit layer 15 and a dielectric layer 16 are formed on the upper and lower surfaces of the core layer 12 to complete a core substrate. Then, the build-up substrate 18 conforming to the design application requirements is completed via the line build-up technique, and the solder resist layer 17 is applied to the partially exposed circuit layer 15. However, the through holes 13a and the pads 13b of the core layer 12 are limited in effective wiring space at a limited substrate thickness due to the limitation of the aspect ratio. In other words, the multilayer substrate produced by the above manufacturing method can increase the wiring space, but cannot effectively reduce the thickness of the entire package structure, and is disadvantageous in terms of thinning and miniaturization of the chip package structure. In particular, when the above-described package substrate 10 is applied to a chip package structure, the thickness of the entire device is increased, and the assembly demand and development trend of thinning and miniaturization of the mobile electronic device cannot be met.
本新型創作提供一種封裝基板,其可減少基板厚度並增加有效的線路佈線空間。The novel creation provides a package substrate that reduces substrate thickness and increases effective wiring space.
本新型創作提供一種晶片封裝結構,其可有效提升指紋辨識裝置的精確度。The novel creation provides a chip package structure that can effectively improve the accuracy of the fingerprint identification device.
本新型創作的封裝基板包括一感應層、一導電層以及一疊層結構。導電層具有相對的一第一表面與一第二表面,並且感應層配置在導電層的第一表面上。疊層結構具有一第一介電層、 一第一導電接墊以及一第一圖案化線路層,皆配置於第二表面上。第一介電層具有相對的一第三表面與一第四表面,以及一第一導電通孔,其中第一介電層包覆第一導電接墊與第一圖案化線路層。The package substrate created by the present invention comprises a sensing layer, a conductive layer and a laminated structure. The conductive layer has a first surface and a second surface opposite to each other, and the sensing layer is disposed on the first surface of the conductive layer. The stacked structure has a first dielectric layer, A first conductive pad and a first patterned circuit layer are disposed on the second surface. The first dielectric layer has a first surface and a fourth surface, and a first conductive via, wherein the first dielectric layer covers the first conductive pad and the first patterned circuit layer.
在本新型創作的一實施例中,上述的封裝基板更包括一增層結構,配置於疊層結構的第四表面上,增層結構具有相對的一第五表面與一第六表面。增層結構包括至少一第二介電層、至少一第二導電通孔以及多個第二導電接墊與第二圖案化線路層。第二介電層配置於第五表面上,並且第二導電通孔配置於第二介電層中。多個第二導電接墊及第二圖案化線路層至少配置於第五表面與第六表面上,其中第一導電通孔、第一導電接墊、第二導電通孔以及其中一個第二導電接墊彼此電性連接。In an embodiment of the present invention, the package substrate further includes a build-up structure disposed on the fourth surface of the laminate structure, the build-up structure having an opposite fifth surface and a sixth surface. The build-up structure includes at least one second dielectric layer, at least one second conductive via, and a plurality of second conductive pads and a second patterned circuit layer. The second dielectric layer is disposed on the fifth surface, and the second conductive via is disposed in the second dielectric layer. The plurality of second conductive pads and the second patterned circuit layer are disposed on at least the fifth surface and the sixth surface, wherein the first conductive via, the first conductive pad, the second conductive via, and one of the second conductive The pads are electrically connected to each other.
在本新型創作的一實施例中,上述的封裝基板更包括一第一防焊層,配置於第六表面上,並且包覆該第二導電接墊與部份該第二圖形化線路層。第一防焊層具有一開口,適於容置一晶片,並且開口暴露出部分第二圖案化線路層以及部分增層結構的第六表面。In an embodiment of the present invention, the package substrate further includes a first solder resist layer disposed on the sixth surface and covering the second conductive pad and a portion of the second patterned circuit layer. The first solder mask has an opening adapted to receive a wafer, and the opening exposes a portion of the second patterned wiring layer and a sixth surface of the portion buildup structure.
在本新型創作的一實施例中,上述的封裝基板更包括多個焊球,配置在部分暴露於該開口內的該第二圖案化線路層上,其中晶片透過焊球與該些第二圖案化線路層電性連接,並且適於接收來自感應層的感應訊息。In an embodiment of the present invention, the package substrate further includes a plurality of solder balls disposed on the second patterned circuit layer partially exposed in the opening, wherein the wafer passes through the solder balls and the second patterns The circuit layer is electrically connected and adapted to receive sensing information from the sensing layer.
在本新型創作的一實施例中,上述的封裝基板更包括一 封裝膠體,配置於第六表面上,以包覆晶片、第一防焊層以及部分暴露於該開口內的增層結構的第六表面。In an embodiment of the present invention, the package substrate further includes a package An encapsulant disposed on the sixth surface to encapsulate the wafer, the first solder mask, and a sixth surface of the buildup structure partially exposed within the opening.
在本新型創作的一實施例中,上述的封裝基板更包括一載板配置於導電層的第一表面,以及一離型膜,配置於載板與導電層之間,其中載板藉由離型膜而自導電層的第一表面移除。In an embodiment of the present invention, the package substrate further includes a carrier plate disposed on the first surface of the conductive layer, and a release film disposed between the carrier and the conductive layer, wherein the carrier is separated by The film is removed from the first surface of the conductive layer.
在本新型創作的一實施例中,上述的感應層為一壓電薄膜所組成。In an embodiment of the present invention, the sensing layer is composed of a piezoelectric film.
在本新型創作的一實施例中,上述的第一導電通孔與第二導電通孔內具有一導電材料,並且藉由導電材料分別與第一及第二導電接墊彼此電性連接。In an embodiment of the present invention, the first conductive via and the second conductive via have a conductive material, and are electrically connected to the first and second conductive pads respectively by a conductive material.
本新型創作的晶片封裝結構包括上述的封裝基板、至少一晶片以及多個焊球。晶片配置於封裝基板上,並且焊球配置於第二圖案化線路層上,其中晶片透過焊球與第二圖案化線路層彼此電性連接。The chip package structure created by the present invention comprises the above package substrate, at least one wafer and a plurality of solder balls. The wafer is disposed on the package substrate, and the solder balls are disposed on the second patterned circuit layer, wherein the wafer is electrically connected to each other through the solder balls and the second patterned circuit layer.
在本新型創作的一實施例中,上述的晶片為一指紋辨識晶片,指紋辨識晶片接收來自感應層的一指紋信號,並且進行一指紋辨識分析。In an embodiment of the present invention, the wafer is a fingerprint identification chip, and the fingerprint recognition chip receives a fingerprint signal from the sensing layer and performs a fingerprint identification analysis.
基於上述,本新型創作的封裝基板包括疊層結構,並可進一步包括增層結構,而成為不具有核層架構的無核層基板。如此,封裝基板的厚度可有效地減少,並且增加有效的線路佈線空間。此外,本新型創作可於載板上製作上述的封裝基板,並且配置離型膜於封裝基板與載板之間。當封裝基板製作完成後,可藉 由離型膜將載板移除,而獲致一平坦表面,並藉以配置感應層於其上。因此,採用此封裝基板的晶片封裝結構,除可有效降低封裝結構的厚度,增加有效的線路佈線空間外,當將指紋辨識晶片焊接於此封裝基板上,並將感應層配置於前述的平坦表面時,可有效減少指紋感測表面不平因素的干擾,有效提升指紋感測與辨識的精確度。Based on the above, the package substrate of the present invention includes a laminated structure, and may further include a build-up structure to become a coreless substrate without a core layer structure. As such, the thickness of the package substrate can be effectively reduced, and an effective wiring space is increased. In addition, the present invention can fabricate the above-mentioned package substrate on a carrier board, and arrange a release film between the package substrate and the carrier. After the package substrate is completed, it can be borrowed The carrier is removed by the release film to achieve a flat surface and the sensing layer is disposed thereon. Therefore, in the chip package structure using the package substrate, in addition to effectively reducing the thickness of the package structure and increasing the effective wiring space, the fingerprint identification wafer is soldered to the package substrate, and the sensing layer is disposed on the flat surface. When the fingerprint sensing surface unevenness factor is effectively reduced, the accuracy of fingerprint sensing and identification is effectively improved.
為讓本新型創作的上述特徵和優點能更明顯易懂,下文特舉實施例,並配合所附圖式作詳細說明如下。The above described features and advantages of the present invention will become more apparent and understood from the following description.
10、100‧‧‧封裝基板10, 100‧‧‧ package substrate
12‧‧‧核層12‧‧‧ nuclear layer
13a‧‧‧通孔13a‧‧‧through hole
13b‧‧‧接墊13b‧‧‧ pads
15‧‧‧線路層15‧‧‧Line layer
16‧‧‧介電層16‧‧‧Dielectric layer
17‧‧‧防焊層17‧‧‧ solder mask
18‧‧‧增層基板18‧‧‧Additional substrate
50‧‧‧載版50‧‧‧ Edition
60‧‧‧離型膜60‧‧‧ release film
110‧‧‧感應層110‧‧‧Sense layer
120‧‧‧導電層120‧‧‧ Conductive layer
125a‧‧‧第一導電接墊125a‧‧‧First conductive pad
125b‧‧‧第一圖案化線路層125b‧‧‧First patterned circuit layer
130‧‧‧疊層結構130‧‧‧Laminated structure
133‧‧‧第一介電層133‧‧‧First dielectric layer
137‧‧‧第一導電通孔137‧‧‧First conductive via
140‧‧‧增層結構140‧‧‧Additional structure
143‧‧‧第二介電層143‧‧‧Second dielectric layer
145a‧‧‧第二導電接墊145a‧‧‧Second conductive pads
145b‧‧‧第二圖案化線路層145b‧‧‧Second patterned circuit layer
146‧‧‧焊球146‧‧‧ solder balls
147‧‧‧第二導電通孔147‧‧‧Second conductive via
150‧‧‧第一防焊層150‧‧‧First solder mask
152‧‧‧開口152‧‧‧ openings
160‧‧‧封裝膠體160‧‧‧Package colloid
200‧‧‧晶片/指紋辨識晶片200‧‧‧ wafer/fingerprint wafer
S1‧‧‧第一表面S1‧‧‧ first surface
S2‧‧‧第二表面S2‧‧‧ second surface
S3‧‧‧第三表面S3‧‧‧ third surface
S4‧‧‧第四表面S4‧‧‧ fourth surface
S5‧‧‧第五表面S5‧‧‧ fifth surface
S6‧‧‧第六表面S6‧‧‧ sixth surface
圖1是習知的一種封裝基板的示意圖。FIG. 1 is a schematic view of a conventional package substrate.
圖2是根據本新型創作一實施例的晶片封裝結構繪示的剖面示意圖。2 is a cross-sectional view showing a wafer package structure according to an embodiment of the present invention.
圖3是根據本新型創作另一實施例的晶片封裝結構繪示的剖面示意圖。3 is a cross-sectional view showing a wafer package structure according to another embodiment of the present invention.
圖4A至圖4I是圖3晶片封裝結構及其封裝基板的製作流程示意圖。4A to FIG. 4I are schematic diagrams showing the fabrication process of the chip package structure and the package substrate of FIG.
圖2是本新型創作一實施例的晶片封裝結構的剖面示意圖。請參考圖2,在本實施例中,封裝基板100包括感應層110、 導電層120以及疊層結構130。導電層120具有相對的第一表面S1與第二表面S2,並且第一導電接墊125a與第一圖案化線路層125b配置於第二表面S2上,而感應層110配置於導電層120的第一表面S1上。疊層結構130具有第一介電層133,配置於該第二表面S2上。第一介電層133包括第三表面S3與第四表面S4以及第一導電通孔137,並且第一介電層133包覆第一導電接墊125a與第一圖案化線路層125b。此外,本實施例的疊層結構130可進一步於第四表面S4上配置多個第二導電接墊145a及第二圖案化導電層145b。再者,第二導電接墊145a及部分的第二圖案化線路層145b上可塗覆第一防焊層150,以絕緣並保護暴露於疊層結構130上的線路層。在本實施例中,塗覆的第一防焊層150在第四表面S4上定義出一開口152,並且部份疊層結構130的第四表面S4以及部份的第二圖案化線路層145b暴露於開口152內。在本實施例中,暴露於開口152內的第二圖案化線路層145b可作為連接外部電子元件的植球焊墊。詳細而言,第四表面S4上可用以作為植球焊墊的部份第二圖案化線路層145b上可配置多個焊球146,以將例如是晶片200的外部電子元件焊接於前述的部份第二圖案化線路層145b上。除此之外,本實施例可進一步於第四表面S4上配置封裝膠體160,以將第一防焊層150、其開口152內的晶片200以及晶片200與第四表面S4之間的間隙完全地包覆。2 is a cross-sectional view showing a wafer package structure of an embodiment of the present invention. Referring to FIG. 2, in the embodiment, the package substrate 100 includes a sensing layer 110, Conductive layer 120 and laminate structure 130. The conductive layer 120 has an opposite first surface S1 and a second surface S2, and the first conductive pad 125a and the first patterned circuit layer 125b are disposed on the second surface S2, and the sensing layer 110 is disposed on the conductive layer 120. A surface S1. The laminated structure 130 has a first dielectric layer 133 disposed on the second surface S2. The first dielectric layer 133 includes a third surface S3 and a fourth surface S4 and a first conductive via 137, and the first dielectric layer 133 covers the first conductive pad 125a and the first patterned wiring layer 125b. In addition, the stacked structure 130 of the present embodiment may further include a plurality of second conductive pads 145a and second patterned conductive layers 145b on the fourth surface S4. Moreover, the first solder resist layer 150 may be coated on the second conductive pad 145a and a portion of the second patterned circuit layer 145b to insulate and protect the circuit layer exposed on the stacked structure 130. In the present embodiment, the coated first solder resist layer 150 defines an opening 152 on the fourth surface S4, and the fourth surface S4 of the partial stacked structure 130 and a portion of the second patterned wiring layer 145b. Exposure to opening 152. In the present embodiment, the second patterned wiring layer 145b exposed in the opening 152 can serve as a ball bonding pad for connecting external electronic components. In detail, a plurality of solder balls 146 may be disposed on a portion of the second surface S4 that can be used as a ball bonding pad on the second patterned wiring layer 145b to solder external electronic components such as the wafer 200 to the aforementioned portion. The second patterned circuit layer 145b. In addition, the present embodiment may further configure the encapsulant 160 on the fourth surface S4 to completely separate the first solder mask 150, the wafer 200 in the opening 152 thereof, and the gap between the wafer 200 and the fourth surface S4. Covered with ground.
圖3是根據本新型創作另一實施例的晶片封裝結構的剖面示意圖。在本實施例中,圖3的封裝基板除了進一步包括增層 結構140之外,其他元件皆與圖2的封裝基板相同,故以相同的元件符號表示相同的元件,並省略該相同元件的敘述。在本實施例中,封裝基板100包括增層結構140,其配置於疊層結構130的第四表面S4上,並且增層結構140具有相對的第五表面S5與第六表面S6。詳細而言,增層結構140包括第二介電層143、多個配置於第二介電層143中的第二導電通孔147。此外,增層結構140另包括多個第二導電接墊145a及多層第二圖案化導電層145b,配置於增層結構140的第五表面S5、第六表面S6以及增層結構140的各疊層之間的接觸表面。在本實施例中,第一導電通孔137、第一導電接墊125a、第二導電通孔147以及其中一個第二導電接墊145a彼此電性連接。再者,如圖2的繪示,本實施例的增層結構140具有兩層的疊層結構,但本新型創作並不限制於此,在其他未繪示的實施例中,增層結構140可依實際的佈線需求改變其疊層的層數與厚度。3 is a cross-sectional view of a wafer package structure in accordance with another embodiment of the present invention. In this embodiment, the package substrate of FIG. 3 further includes a buildup layer. The other components are the same as those of the package substrate of FIG. 2, and the same components are denoted by the same reference numerals, and the description of the same components is omitted. In the present embodiment, the package substrate 100 includes a build-up structure 140 disposed on the fourth surface S4 of the laminate structure 130, and the build-up structure 140 has opposite fifth and sixth surfaces S5 and S6. In detail, the build-up structure 140 includes a second dielectric layer 143 and a plurality of second conductive vias 147 disposed in the second dielectric layer 143 . In addition, the build-up structure 140 further includes a plurality of second conductive pads 145a and a plurality of second patterned conductive layers 145b disposed on the fifth surface S5, the sixth surface S6 of the build-up structure 140, and the stack of the build-up structures 140. The contact surface between the layers. In this embodiment, the first conductive vias 137, the first conductive pads 125a, the second conductive vias 147, and one of the second conductive pads 145a are electrically connected to each other. Furthermore, as shown in FIG. 2, the build-up structure 140 of the present embodiment has a two-layer laminate structure, but the present invention is not limited thereto. In other embodiments not shown, the build-up structure 140 The number of layers and thickness of the laminate can be varied depending on the actual wiring requirements.
此外,在圖3中,封裝基板100的增層結構140的第六表面S6上的構件與其配置方式,以及其相關的功能敘述是與圖2疊層結構130的第四表面S4上的構件與配置相同。因此,本新型創作於此將不再做重複的敘述。In addition, in FIG. 3, the components on the sixth surface S6 of the build-up structure 140 of the package substrate 100 and their arrangement, and their associated functional descriptions are the components on the fourth surface S4 of the laminate structure 130 of FIG. The configuration is the same. Therefore, the novel creations herein will not be repeated.
再者,在前述的實施例中,晶片200可為一指紋辨識晶片。指紋辨識晶片200可經由第二圖案化導電層145b、第二導電接墊145a、第二導電通孔147、疊層結構130中的第一導電通孔137與第一導電接墊125a以及導電層120電性連接感應層110。 進一步而言,感應層110可感測並接收指紋訊號,以將指紋訊號傳送至指紋辨識晶片200。此外,指紋辨識晶片200可接收並分析來自感應層110的指紋訊號,以辨識接觸的指紋特徵。在本實施例中,感應層110可例如為但不限制於是由壓電薄膜所組成,以將來自指紋接觸產生的壓力訊號值轉換成電訊號,以供後續的訊號傳遞與分析。Moreover, in the foregoing embodiment, the wafer 200 can be a fingerprint recognition wafer. The fingerprint identification wafer 200 can pass through the second patterned conductive layer 145b, the second conductive pad 145a, the second conductive via 147, the first conductive via 137 of the stacked structure 130, the first conductive pad 125a, and the conductive layer. 120 is electrically connected to the sensing layer 110. Further, the sensing layer 110 can sense and receive the fingerprint signal to transmit the fingerprint signal to the fingerprint recognition chip 200. In addition, the fingerprint recognition chip 200 can receive and analyze the fingerprint signal from the sensing layer 110 to identify the fingerprint features of the contact. In this embodiment, the sensing layer 110 can be, for example but not limited to, composed of a piezoelectric film to convert the pressure signal value generated from the fingerprint contact into an electrical signal for subsequent signal transmission and analysis.
請再參考圖3,在本實施例中,由於疊層結構130與增層結構140並未具有如圖1核層12的架構。因此,本實施例的第一導電通孔137與第二導電通孔147不會受到核層內導電通孔與導電接墊之間高深寬比的限制。因此,本實施例的疊層結構130與增層結構140可具有較薄的厚度。也因此,可進一步減少使用封裝基板100的晶片封裝結構厚度,並可有效增加基板中的線路佈線空間。再者,將前述使用封裝基板100的晶片封裝結構應用於指紋辨識晶片200的封裝上,可有效地減少指紋辨識裝置(未示出)的整體厚度,以使指紋辨裝置可適用於目前漸趨輕薄化的各種行動電子裝置中。Referring to FIG. 3 again, in the present embodiment, since the stacked structure 130 and the build-up structure 140 do not have the structure of the core layer 12 of FIG. Therefore, the first conductive via 137 and the second conductive via 147 of the embodiment are not limited by the high aspect ratio between the conductive via and the conductive pad in the core layer. Therefore, the stacked structure 130 and the build-up structure 140 of the present embodiment may have a relatively thin thickness. Therefore, the thickness of the wafer package structure using the package substrate 100 can be further reduced, and the line wiring space in the substrate can be effectively increased. Furthermore, applying the foregoing wafer package structure using the package substrate 100 to the package of the fingerprint recognition wafer 200 can effectively reduce the overall thickness of the fingerprint identification device (not shown), so that the fingerprint identification device can be applied to the current trend. Light and thin in various mobile electronic devices.
另一方面,前述實施例中的第一與第二介電層133、143的材質可分別例如是ABF(Ajinomoto build-up film)樹脂、苯並環丁烯(benzocyclobutene,簡稱BCB)樹脂、光阻材料、聚苯噁唑(polybenzoxazole,簡稱PBO)、甲基系矽膠、乙基系矽膠,環苯系矽膠、環氧樹脂或高分子樹脂。此外,第一防焊層150的材質可例如是但不限制於防焊綠漆、樹脂或黏性材料等。On the other hand, the materials of the first and second dielectric layers 133 and 143 in the foregoing embodiments may be, for example, ABF (Ajinomoto build-up film) resin, benzocyclobutene (BCB) resin, and light. Resistive material, polybenzoxazole (PBO), methyl silicone, ethyl silicone, cyclophenyl tannin, epoxy resin or polymer resin. In addition, the material of the first solder resist layer 150 may be, for example, but not limited to, a solder resist green paint, a resin or a viscous material or the like.
圖4A至圖4I是圖3晶片封裝結構及其封裝基板的製作流程示意圖。以下將藉由圖4A至圖4I說明本實施例的封裝基板的製作流程,但是,上述的圖式僅是用來作為舉例說明,非用以限制本新型創作所提供的封裝基板100。首先,如圖4A所示,提供載板50,並將離型膜60配置於該載板50上。接著,如圖4B,再將導電層120配置於離型膜60上,其中導電層120具有相對的第一表面S1與第二表面S2。然後,請參考圖4C,形成第一導電接墊125a與第一圖案化線路層125b於導電層120的第二表面S2上。接著,請參考圖4D,於導電層120上形成第一介電層133,並且包覆第一導電接墊125a與第一圖案化線路層125b。此外,藉由例如是雷射鑽孔或是其他適合的製程方式貫穿第一介電層133,以形成開孔並暴露出部分的第一導電接墊125a。接著,在開孔中配置導電材料,以形成第一導電通孔137並與第一導電接墊125a彼此電性連接,其中導電材料可例如是但不限制於銅或是其他適用的導電材料。本實施例可藉由上述的製程完成具有第一介電層133、第一導電接墊125a、第一圖案化線路層125b以及第一導電通孔137的疊層結構130。再者,如圖4D所示,疊層結構130的第一介電層133具有第三表面S3與第四表面S4,並且可於第四表面S4上形成第二導電接墊145a第二圖案化線路層145b。4A to FIG. 4I are schematic diagrams showing the fabrication process of the chip package structure and the package substrate of FIG. The fabrication flow of the package substrate of the present embodiment will be described below with reference to FIGS. 4A to 4I. However, the above drawings are merely illustrative and are not intended to limit the package substrate 100 provided by the present invention. First, as shown in FIG. 4A, a carrier 50 is provided, and a release film 60 is disposed on the carrier 50. Next, as shown in FIG. 4B, the conductive layer 120 is further disposed on the release film 60, wherein the conductive layer 120 has opposite first and second surfaces S1 and S2. Then, referring to FIG. 4C, the first conductive pad 125a and the first patterned circuit layer 125b are formed on the second surface S2 of the conductive layer 120. Next, referring to FIG. 4D, a first dielectric layer 133 is formed on the conductive layer 120, and the first conductive pad 125a and the first patterned circuit layer 125b are covered. In addition, the first dielectric layer 133 is penetrated through, for example, a laser drill or other suitable process to form an opening and expose a portion of the first conductive pad 125a. Then, a conductive material is disposed in the opening to form the first conductive via 137 and electrically connected to the first conductive pad 125a, wherein the conductive material may be, for example, but not limited to copper or other suitable conductive material. In this embodiment, the stacked structure 130 having the first dielectric layer 133, the first conductive pads 125a, the first patterned wiring layer 125b, and the first conductive vias 137 can be completed by the above process. Moreover, as shown in FIG. 4D, the first dielectric layer 133 of the stacked structure 130 has a third surface S3 and a fourth surface S4, and a second conductive pad 145a can be formed on the fourth surface S4. Circuit layer 145b.
如同上述,本實施例的第一介電層133的材質例如是ABF樹脂材料或是其他適合的介電材料。而第一圖案化導電層125a與第一圖案化線路層125b的材質例如是銅或是其他適用的導電材 料,其藉由例如是無電電鍍(electroless plating)製程或是其他適用的製程形成於導電層的第二表面S2上。接著,請參考圖4E,在完成前述的疊層結構130後,可繼續於疊層結構130上,形成增層結構140。在本實施例中,增層結構140可以一層或多層的疊層結構反覆堆疊而成。雖然如圖4E所繪示,本案的增層結構140是由兩層的疊層結構所組成,但本新型創作並不限於此,增層結構140的層數可依據實際佈線需求調整並配置於疊層結構130的第一介電層133上,以增加晶片封裝結構的線路佈局空間。此外,本實施例的增層結構140具有第五表面S5與第六表面S6,其中第五表面S5與第一介電層133的第四表面S4相互接觸。在本實施例中,增層結構包括兩層的第二介電層143分別配置至少一第二導電接墊145a與第二圖案化線路層145b。此外,增層結構140更包括多個第二導電通孔147,其與第二導電接墊145a及第二圖案化線路層145b彼此電性連接。進一步而言,在本實施例中,增層結構140的第二導電通孔147、第二導電接墊145a與疊層結構130中的第一導電通孔137、第一導電接墊125a彼此電性連接。另一方面,本實施例增層結構140的第二圖形化線路層145b、第二導電接墊145a以及第二導電通孔147形成的製程方法與疊層結構130中的第一圖案化線路層125b、第一導電接墊125a以及第一導電通孔137相同。因此,本新型創作於此將不再重複地敘述。As described above, the material of the first dielectric layer 133 of the present embodiment is, for example, an ABF resin material or other suitable dielectric material. The material of the first patterned conductive layer 125a and the first patterned circuit layer 125b is, for example, copper or other suitable conductive material. The material is formed on the second surface S2 of the conductive layer by, for example, an electroless plating process or other suitable process. Next, referring to FIG. 4E, after the foregoing stacked structure 130 is completed, the build-up structure 140 may be formed on the stacked structure 130. In this embodiment, the build-up structure 140 may be stacked in a stack of one or more layers. Although the build-up structure 140 of the present invention is composed of a two-layer laminated structure as shown in FIG. 4E, the novel creation is not limited thereto, and the number of layers of the build-up structure 140 can be adjusted and configured according to actual wiring requirements. The first dielectric layer 133 of the stacked structure 130 is placed to increase the layout space of the chip package structure. Further, the build-up structure 140 of the present embodiment has a fifth surface S5 and a sixth surface S6, wherein the fifth surface S5 and the fourth surface S4 of the first dielectric layer 133 are in contact with each other. In this embodiment, the build-up structure includes two layers of the second dielectric layer 143 respectively disposed with at least one second conductive pad 145a and the second patterned circuit layer 145b. In addition, the build-up structure 140 further includes a plurality of second conductive vias 147 electrically connected to the second conductive pads 145a and the second patterned circuit layer 145b. Further, in the embodiment, the second conductive vias 147 and the second conductive pads 145a of the build-up structure 140 and the first conductive vias 137 and the first conductive pads 125a of the stacked structure 130 are electrically connected to each other. Sexual connection. On the other hand, the process of forming the second patterned circuit layer 145b, the second conductive pads 145a, and the second conductive vias 147 of the build-up structure 140 of the present embodiment and the first patterned circuit layer in the stacked structure 130 The first conductive pad 125a and the first conductive via 137 are the same. Therefore, the novel creations will not be repeatedly described herein.
請再參考圖4E,在本實施例中,第二導電接墊145a與第二圖案化線路層145b形成於增層結構140的第六表面S6上。接 著,在第二導電接墊145a與部份的第二圖案化線路層145b上塗覆絕緣保護用的第一防焊層150,其中第一防焊層150可例如是但不限制為綠漆材料。在本實施例中,第一防焊層150在增層結構140的第六表面S6上定義並形成開口152,並且開口152內暴露出部份的第二圖案化線路層145b,以作為外部電子元件的植球焊墊。詳細而言,請參考圖4F,在本實施例中,可進一步將多個焊球146配置於位於開口152內,並且作為植球焊墊的第二圖案化線路層145b上,以將例如是晶片200等外部電子元件焊接於封裝基板100上。此外,如同上述的內容,本實施例的晶片200可為指紋辨識晶片,用以接收並分析指紋訊號。Referring to FIG. 4E again, in the embodiment, the second conductive pad 145a and the second patterned circuit layer 145b are formed on the sixth surface S6 of the build-up structure 140. Connect A first solder resist layer 150 for insulating protection is applied on the second conductive pad 145a and a portion of the second patterned circuit layer 145b, wherein the first solder resist layer 150 may be, for example but not limited to, a green paint material. . In the present embodiment, the first solder resist layer 150 defines and forms an opening 152 on the sixth surface S6 of the build-up structure 140, and a portion of the second patterned wiring layer 145b is exposed in the opening 152 as an external electron. Ball bonding pads for components. In detail, referring to FIG. 4F, in the embodiment, a plurality of solder balls 146 may be further disposed in the opening 152 and as the second patterned circuit layer 145b of the ball bonding pad to be, for example, External electronic components such as the wafer 200 are soldered to the package substrate 100. In addition, as described above, the wafer 200 of the embodiment may be a fingerprint identification chip for receiving and analyzing the fingerprint signal.
進一步而言,請參考圖4G,在指紋辨識晶片200焊接於封裝基板100後,接著再以封裝膠體160以注模成型的方式包覆指紋辨識晶片200、第一防焊層150,並且填充於指紋辨識晶片200與暴露於開口152內的第六表面S6之間的空隙。然後,如圖4H所示,在完成注模步驟之後,可透過簡單的切割步驟,藉由離型膜60將載板50自封裝基板100上移除。在本實施例中,藉由離型膜60的配置可減少移除載板50所需的製程時間,並進一步減少製程的複雜度。此外,在移除離型膜60之後,本實施例可以例如是但不限制於電漿蝕刻的方式去除離型膜60移除後於第一表面S1所殘留的膠渣,以使導電層120的第一表面S1在載板50移除之後成為一高度平坦的表面。Further, referring to FIG. 4G, after the fingerprint identification wafer 200 is soldered to the package substrate 100, the fingerprint identification wafer 200, the first solder resist layer 150, and the first solder resist layer 150 are then overmolded by the encapsulant 160. The fingerprint identifies the gap between the wafer 200 and the sixth surface S6 exposed within the opening 152. Then, as shown in FIG. 4H, after the injection molding step is completed, the carrier 50 can be removed from the package substrate 100 by the release film 60 through a simple cutting step. In the present embodiment, the configuration time required to remove the carrier 50 can be reduced by the configuration of the release film 60, and the complexity of the process can be further reduced. In addition, after the release film 60 is removed, the present embodiment may remove the residue remaining on the first surface S1 after the release film 60 is removed, for example, but not limited to plasma etching, so that the conductive layer 120 is removed. The first surface S1 becomes a highly flat surface after the carrier 50 is removed.
最後,如圖4I所示,在移除載板50之後,可於導電層 120的第一表面S1上形成用於接觸並接收指紋訊號的感應層110。在本實施例中,配置於第一表面S1上的感應層110可藉由疊層結構130與增層結構140中的第一與第二導電接墊125a、145a、第一與第二圖案化線路層125b、145b及第一與第二導電通孔137、147與前述的指紋辨識晶片200電性連接,以將感應層110所接收的指紋接觸感應訊號傳送至指紋辨識晶片200。此外,如同上述,本實施例的感應層110可例如是但不限定於是由壓電薄膜所組成,以將指紋所產生的壓力訊號轉換成電訊號。在本實施例中,由於導電層120的第一表面S1藉由離型膜60移除載板50,並以蝕刻的方式去除殘膠後可成為高度平坦的表面。因此,將感應層110配置在第一表面S1上可具有良好的平坦性,並可減低或消除指紋感測表面不平因素的干擾,使得感應層110的指紋感測與整體指紋辨識裝置的辨識精準度獲得進一步的提升。Finally, as shown in FIG. 4I, after the carrier 50 is removed, the conductive layer can be A sensing layer 110 for contacting and receiving a fingerprint signal is formed on the first surface S1 of 120. In this embodiment, the sensing layer 110 disposed on the first surface S1 can be patterned by the first and second conductive pads 125a, 145a, the first and second layers in the stacked structure 130 and the build-up structure 140. The circuit layers 125b and 145b and the first and second conductive vias 137 and 147 are electrically connected to the fingerprint identification chip 200 to transmit the fingerprint contact sensing signals received by the sensing layer 110 to the fingerprint recognition wafer 200. In addition, as described above, the sensing layer 110 of the present embodiment may be, for example but not limited to, composed of a piezoelectric film to convert the pressure signal generated by the fingerprint into an electrical signal. In the present embodiment, since the first surface S1 of the conductive layer 120 removes the carrier 50 by the release film 60 and removes the residual glue by etching, it can become a highly flat surface. Therefore, the sensing layer 110 is disposed on the first surface S1 to have good flatness, and the interference of the fingerprint sensing surface unevenness factor can be reduced or eliminated, so that the fingerprint sensing of the sensing layer 110 and the overall fingerprint identification device are accurately identified. Degrees have been further improved.
綜上所述,本新型創作所提供的封裝基板具有疊層結構,並可進一步包括增層結構,其中增層結構可包含多層交互堆疊的疊層結構以增加線路層的佈線空間。此外,由於本新型創作的封裝基板的無核層架構,使得本新型創作的導電通孔與導電接墊不受限於傳統核層基板的高深寬比的配置方式,而使得本新型創作的封裝基板具有較薄的厚度,並且可在相同的厚度空間之下,容納較多層的疊層,而具有較多的線路佈線空間。因此,將前述的封裝基板應用於例如是指紋辨識晶片的封裝上,可進一步減少整體晶片封裝結構的厚度,並且有利於將前述的指紋辨識晶 片的封裝結構應用於目前漸趨輕薄化的行動電子裝置上。此外,由於本新型創作的製程方式是於具有離型膜配置的載板上形成封裝基板,因此,在封裝基版完成之後,可藉由離型膜將載板移除,並以蝕刻的方式去除殘膠,使得載板去除後的表面上可具有良好的平坦度。再者,將例如是應用於感測指紋的感應層配置於前述的平坦表面上,可減少或消除指紋感測表面不平因素的干擾,而進一步提升指紋感測與辨識的精準度。In summary, the package substrate provided by the novel creation has a laminated structure, and may further include a build-up structure, wherein the build-up structure may include a plurality of layers of alternately stacked laminate structures to increase the wiring space of the circuit layer. In addition, due to the coreless layer structure of the package substrate created by the novel, the conductive via and the conductive pad created by the novel are not limited to the high aspect ratio configuration of the conventional core substrate, and the package of the novel creation is made. The substrate has a relatively thin thickness and can accommodate a stack of more layers under the same thickness space, and has more wiring space. Therefore, applying the foregoing package substrate to a package such as a fingerprint recognition wafer can further reduce the thickness of the entire chip package structure and facilitate the aforementioned fingerprint recognition crystal The package structure of the chip is applied to mobile electronic devices that are currently becoming thinner and lighter. In addition, since the manufacturing method of the present invention is to form a package substrate on a carrier having a release film configuration, after the package substrate is completed, the carrier can be removed by a release film and etched. The residual glue is removed so that the surface after removal of the carrier can have good flatness. Furthermore, the sensing layer applied to the sensing fingerprint, for example, is disposed on the aforementioned flat surface, which can reduce or eliminate the interference of the fingerprint sensing surface unevenness factor, and further improve the accuracy of fingerprint sensing and identification.
雖然本新型創作已以實施例揭露如上,然其並非用以限定本新型創作,任何所屬技術領域中具有通常知識者,在不脫離本新型創作的精神和範圍內,當可作些許的更動與潤飾,故本新型創作的保護範圍當視後附的申請專利範圍所界定者為準。Although the present invention has been disclosed in the above embodiments, it is not intended to limit the novel creation, and any person skilled in the art can make some changes without departing from the spirit and scope of the novel creation. Retouching, the scope of protection of this new creation is subject to the definition of the scope of the patent application attached.
100‧‧‧封裝基板100‧‧‧Package substrate
110‧‧‧感應層110‧‧‧Sense layer
120‧‧‧導電層120‧‧‧ Conductive layer
125a‧‧‧第一導電接墊125a‧‧‧First conductive pad
125b‧‧‧第一圖案化線路層125b‧‧‧First patterned circuit layer
130‧‧‧疊層結構130‧‧‧Laminated structure
133‧‧‧第一介電層133‧‧‧First dielectric layer
137‧‧‧第一導電通孔137‧‧‧First conductive via
145a‧‧‧第二導電接墊145a‧‧‧Second conductive pads
145b‧‧‧第二圖案化線路層145b‧‧‧Second patterned circuit layer
146‧‧‧焊球146‧‧‧ solder balls
150‧‧‧第一防焊層150‧‧‧First solder mask
152‧‧‧開口152‧‧‧ openings
160‧‧‧封裝膠體160‧‧‧Package colloid
200‧‧‧晶片/指紋辨識晶片200‧‧‧ wafer/fingerprint wafer
S1‧‧‧第一表面S1‧‧‧ first surface
S2‧‧‧第二表面S2‧‧‧ second surface
S3‧‧‧第三表面S3‧‧‧ third surface
S4‧‧‧第四表面S4‧‧‧ fourth surface
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103220392U TWM508791U (en) | 2014-11-17 | 2014-11-17 | Package substrate and chip package structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW103220392U TWM508791U (en) | 2014-11-17 | 2014-11-17 | Package substrate and chip package structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TWM508791U true TWM508791U (en) | 2015-09-11 |
Family
ID=54607353
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW103220392U TWM508791U (en) | 2014-11-17 | 2014-11-17 | Package substrate and chip package structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TWM508791U (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI587456B (en) * | 2016-02-01 | 2017-06-11 | 欣興電子股份有限公司 | Package substrate and method for manufacturing the same |
TWI617992B (en) * | 2016-06-29 | 2018-03-11 | 關鍵禾芯科技股份有限公司 | Fingerprint identification device andmanufacturing method thereof |
TWI644952B (en) * | 2016-10-27 | 2018-12-21 | 武漢市三選科技有限公司 | Composition of polymer dielectric capacitor film and method for pakage by polymer dielectric capacitor film |
-
2014
- 2014-11-17 TW TW103220392U patent/TWM508791U/en unknown
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI587456B (en) * | 2016-02-01 | 2017-06-11 | 欣興電子股份有限公司 | Package substrate and method for manufacturing the same |
TWI617992B (en) * | 2016-06-29 | 2018-03-11 | 關鍵禾芯科技股份有限公司 | Fingerprint identification device andmanufacturing method thereof |
TWI644952B (en) * | 2016-10-27 | 2018-12-21 | 武漢市三選科技有限公司 | Composition of polymer dielectric capacitor film and method for pakage by polymer dielectric capacitor film |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US10366949B2 (en) | Wiring substrate and semiconductor device | |
US7639473B2 (en) | Circuit board structure with embedded electronic components | |
JP2007311688A (en) | Substrate for electronic apparatus, manufacturing method thereof, electronic apparatus, and manufacturing method thereof | |
US20120037411A1 (en) | Packaging substrate having embedded passive component and fabrication method thereof | |
TWI581690B (en) | Package apparatus and manufacturing method thereof | |
US20090096099A1 (en) | Package substrate and method for fabricating the same | |
KR20090117237A (en) | Electronic components embedded pcb and the method for manufacturing thereof | |
JP2008091640A (en) | Electronic equipment, and manufacturing method thereof | |
JP2008091639A (en) | Electronic equipment, and manufacturing method thereof | |
US9324580B2 (en) | Process for fabricating a circuit substrate | |
US9911626B2 (en) | Interposer substrate and method for fabricating the same | |
TWI594382B (en) | Electronic package and method of manufacture | |
JP2010219121A (en) | Semiconductor device and electronic device | |
JP5017872B2 (en) | Semiconductor device and manufacturing method thereof | |
KR20170009128A (en) | Circuit board and manufacturing method of the same | |
US11069540B2 (en) | Package on package and a method of fabricating the same | |
JP2016004992A (en) | Package method | |
TWI530240B (en) | Printed circuit board and method for manufacturing same | |
US11508673B2 (en) | Semiconductor packaging substrate, fabrication method and packaging process thereof | |
TWM508791U (en) | Package substrate and chip package structure | |
TWI628772B (en) | Integrated circuit packaging system with embedded component and method of manufacture thereof | |
TWI419630B (en) | Embedded printed circuit board and method of manufacturing the same | |
TWI621194B (en) | Testing board component | |
TWI566348B (en) | Package structure and method of manufacture | |
TW202011557A (en) | Circuit carrier with embedded substrate, manufacturing method thereof and chip package structure |