TWM503056U - Bush unit using for plasma reaction device - Google Patents

Bush unit using for plasma reaction device Download PDF

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Publication number
TWM503056U
TWM503056U TW103223466U TW103223466U TWM503056U TW M503056 U TWM503056 U TW M503056U TW 103223466 U TW103223466 U TW 103223466U TW 103223466 U TW103223466 U TW 103223466U TW M503056 U TWM503056 U TW M503056U
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Taiwan
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connecting portion
cavity
bushing
unit
bushing unit
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TW103223466U
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Chinese (zh)
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Wen-Hsin Chiang
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Wen-Hsin Chiang
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Priority to TW103223466U priority Critical patent/TWM503056U/en
Priority to CN201520264626.3U priority patent/CN204668276U/en
Priority to JP2015002140U priority patent/JP3198586U/en
Publication of TWM503056U publication Critical patent/TWM503056U/en
Priority to CN201510442561.1A priority patent/CN105304445B/en
Priority to CN201710739775.4A priority patent/CN107376800B/en
Priority to JP2015146634A priority patent/JP6638167B2/en

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/08Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J2219/0894Processes carried out in the presence of a plasma

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  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • General Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Description

用於電漿反應裝置之襯套單元Bushing unit for plasma reactor

本創作係關於一種用於電漿反應裝置之襯套單元,特別是關於一種可替換式的襯套單元。The present invention relates to a bushing unit for a plasma reactor, and more particularly to an alternative bushing unit.

現今,電漿反應技術已被廣泛的應用在例如半導體製造工業、顯示面板製造工業、太陽能電池製造工業等各種產業中。一般而言,電漿反應裝置係由複數個腔體(材料包含鋁合金或不鏽鋼)所組成,並且在腔體的內壁鍍有保護膜或者是塗覆氧化鋁層或陶瓷層,以達到絕緣和抗電漿侵蝕的效果。Today, plasma reaction technology has been widely used in various industries such as the semiconductor manufacturing industry, the display panel manufacturing industry, and the solar cell manufacturing industry. In general, the plasma reaction device is composed of a plurality of cavities (the material comprises aluminum alloy or stainless steel), and the inner wall of the cavity is coated with a protective film or an aluminum oxide layer or a ceramic layer to achieve insulation. And the effect of resistance to plasma erosion.

電漿反應腔體通常用在各種電子元件製造工藝中,諸如蝕刻製程、化學氣相沉積(CVD)製程及其他與在基板上製造電子元件相關的製程。利用許多方法生成及/或控制電漿密度、形狀以及反應腔體中的電氣特徵,諸如一般用在常規電漿腔體中的電容性或電感性耦合RE源。例如,在電漿輔助化學氣相沉積(PECVD)製程期間,反應氣體透過電容性耦合噴頭導入反應腔體,該噴頭佈置在被製程配件環繞的半導體基板上方。一旦電漿形成於PECVD腔體,電漿與反應氣體和基板反應以沉積期望的材料層於基板上。大致而言,電漿生成區域中形成的電漿的特徵能夠改善佈置在電 漿生成區域下游的基板或反應腔室的一部分上所執行的沉積、蝕刻及/或清潔製程。Plasma reaction chambers are commonly used in a variety of electronic component fabrication processes, such as etching processes, chemical vapor deposition (CVD) processes, and other processes associated with fabricating electronic components on substrates. The plasma density, shape, and electrical characteristics in the reaction chamber are generated and/or controlled using a number of methods, such as capacitive or inductively coupled RE sources typically used in conventional plasma cavities. For example, during a plasma assisted chemical vapor deposition (PECVD) process, a reactive gas is introduced into the reaction chamber through a capacitive coupling nozzle disposed above the semiconductor substrate surrounded by the process fitting. Once the plasma is formed in the PECVD chamber, the plasma reacts with the reactive gas and the substrate to deposit a desired layer of material on the substrate. In general, the characteristics of the plasma formed in the plasma generating region can be improved in the arrangement of electricity. A deposition, etching, and/or cleaning process performed on a substrate or a portion of the reaction chamber downstream of the slurry formation region.

常規電漿反應腔設計中,所生成的電漿是佈置在基板表面上 方,該設計會引發非所求的濺射以及對基板表面的傷害,這是由於電漿中所形成的電子與離子和基板表面的交互作用所致。生成的電漿的游離電離子及電氣接地的部件大體上會累積淨電荷。所形成的淨電荷引發形成於電漿中的電子及/或離子轟擊基板或腔室部件的暴露表面,並且可能對基板或腔室部件的暴露表面造成傷害。因此,在一些應用中,期望形成具有足以易於與基板表面(或腔室部件表面)反應的能量的氣體自由基,以強化反應速率同時不會有力地轟擊基板或腔室部件表面,因為非離子化的氣體自由基不受形成於基板或部件表面上的電荷所影響。然而,已發現,在使用塗層裝置的電漿反應腔體時,嚴重的製程漂移會發生。該製程漂移可能是由激發氣體透過塗層中的缺陷(諸如塗層孔隙性或裂縫)與結構金屬部件的表面交互作用所引發。塗層的問題在等離子體含有氧化物料或氟化物料(此類物料趨於攻擊多數通常使用的金屬材料)時特別嚴重,尤其最容易發生在單元結合處。In the conventional plasma reaction chamber design, the generated plasma is disposed on the surface of the substrate. In addition, this design can cause undesired sputtering and damage to the surface of the substrate due to the interaction of electrons formed in the plasma with the surface of the substrate and the substrate. The free ion and the electrically grounded components of the resulting plasma generally accumulate a net charge. The resulting net charge initiates electrons and/or ions formed in the plasma to bombard the exposed surface of the substrate or chamber component and may cause damage to the exposed surface of the substrate or chamber component. Therefore, in some applications, it is desirable to form gas radicals having sufficient energy to readily react with the substrate surface (or chamber component surface) to enhance the reaction rate while not bombarding the substrate or chamber component surface forcefully because of the non-ion The gas radicals are not affected by the charges formed on the surface of the substrate or component. However, it has been found that severe process drift can occur when using the plasma reaction chamber of the coating apparatus. This process drift may be caused by the interaction of the excitation gas through defects in the coating, such as coating porosity or cracks, with the surface of the structural metal component. The problem of coating is particularly acute when the plasma contains an oxide or fluorinated material that tends to attack most commonly used metallic materials, especially at the cell junction.

有鑑於此,電漿反應裝置必須要進行定期的維修與保養,並且將反應腔體的內壁上的鍍層進行徹底的退除,例如使用化學蝕刻、噴砂、拋磨或車銑等方式。然而,在藉由各種方式進行退鍍時,皆有可能造成反應腔體的耗損,例如造成反應腔體的腔壁厚度變薄。另一方面,反應腔體的內壁在長期遭受電漿離子的撞擊下,亦有可能會導致局部腔壁的損壞。基於上述原因,當電漿反應裝置在使用一定時間過後,勢必需要將受損的 腔體進行更換。另外,當腔體損壞的部位係發生在腔體與腔體的接合處時,將會導致腔體間的氣密度不良或電漿反應時的磁場偏移,使之後續使用電漿產生效能的降低與均勻度不足的情況產生。In view of this, the plasma reactor must be regularly repaired and maintained, and the plating on the inner wall of the reaction chamber should be completely removed, for example, by chemical etching, sand blasting, polishing or turning. However, when deplating is performed by various means, it is possible to cause the loss of the reaction chamber, for example, the thickness of the cavity wall of the reaction chamber is thinned. On the other hand, the inner wall of the reaction chamber may also cause damage to the local cavity wall under the impact of plasma ions for a long time. For the above reasons, when the plasma reactor is used for a certain period of time, it is bound to be damaged. The cavity is replaced. In addition, when the damaged part of the cavity occurs at the junction of the cavity and the cavity, it will result in poor gas density between the cavity or magnetic field displacement during the plasma reaction, so that the subsequent use of plasma produces efficiency. Reduced and insufficient uniformity occurs.

再者,請參照第1圖,其顯示一種傳統的電漿反應裝置10。 該電漿反應裝置10的其中一部份係由三件式的腔體所組成,如第1圖所示之第一腔體11、第二腔體12和第三腔體13。在現今市場上,為了生產與組裝的方便,該電漿反應裝置10的該第一腔體11在分別與該第二腔體12和該第三腔體13的連接面通常係被設計為相同的構型,例如兩面皆設計為公頭,以插裝至該第二腔體12和該第三腔體13的內部,或者是將兩面皆設計為母頭,以收容該第二腔體12和該第三腔體13的一部份。Furthermore, please refer to Fig. 1, which shows a conventional plasma reactor 10. A portion of the plasma reactor 10 is comprised of a three-part chamber, such as the first chamber 11, the second chamber 12, and the third chamber 13 shown in FIG. In the current market, for the convenience of production and assembly, the first cavity 11 of the plasma reactor 10 is generally designed to be identical to the connection surface of the second cavity 12 and the third cavity 13, respectively. The configuration is, for example, designed to be male on both sides for insertion into the interior of the second cavity 12 and the third cavity 13, or both sides are designed as females to accommodate the second cavity 12 And a portion of the third cavity 13.

然而,根據電漿製程原理,該電漿反應裝置10在運作上會產 生一定方向的磁力線,容易使得雙面具有相同構型的該第一腔體11的其中一連接面造成損壞。基於上述原因,因為腔體損壞的部位係發生在腔體與腔體的接合處,所以也會導致腔體間的氣密度不良或電漿反應時的磁場偏移,使之後續使用電漿產生效能的降低與均勻度不足的情況產生。因此,在長期使用後必需要將受損的腔體進行更換,導致生產的成本提高。However, according to the plasma processing principle, the plasma reactor 10 will be produced in operation. The magnetic lines of force in a certain direction easily cause damage to one of the joint faces of the first cavity 11 having the same configuration on both sides. For the above reasons, because the damaged part of the cavity occurs at the junction of the cavity and the cavity, it also causes a poor gas density between the cavities or a magnetic field shift during the plasma reaction, so that subsequent use of plasma is generated. Reduced performance and insufficient uniformity. Therefore, it is necessary to replace the damaged cavity after long-term use, resulting in an increase in the cost of production.

故,有必要提供一種電漿反應裝置,其不會因腔體的局部內 壁受到損壞,而導致需要更換整個受損部位的腔體。另一方面,該電漿反應裝置能依照實際生產下所產生的磁力線方向,相應變更適合的腔體連接面的構型,進而增加電漿反應裝置的腔體的使用壽命。Therefore, it is necessary to provide a plasma reaction device that does not depend on the local part of the cavity. The wall is damaged, resulting in the need to replace the cavity of the entire damaged part. On the other hand, the plasma reaction device can change the configuration of the suitable cavity connection surface according to the direction of the magnetic line generated under actual production, thereby increasing the service life of the cavity of the plasma reaction device.

為解決上述習知技術之問題,本創作之目的在於提供一種用 於電漿反應裝置之襯套單元,其係設置於電漿反應裝置之腔體的內側壁,並且該襯套單元為可替換式,其一方面能保護電漿反應裝置之腔體的內側壁不會因電漿轟擊而損壞,或者是在進行去膜時造成腔壁的耗損,另一方面能依照實際應用的需求,將腔體的連接面設置為滿足電漿反應的磁力線與氣場原理的構型。In order to solve the above problems of the prior art, the purpose of the present invention is to provide a use a bushing unit of the plasma reactor, which is disposed on an inner side wall of the cavity of the plasma reactor, and the bushing unit is replaceable, which on the one hand protects the inner side wall of the cavity of the plasma reactor It will not be damaged by plasma bombardment, or it will cause the loss of the cavity wall when the film is removed. On the other hand, according to the needs of practical applications, the connection surface of the cavity can be set to meet the magnetic field and gas field principle of plasma reaction. Configuration.

為達上述之目的,本創作提供一種用於電漿反應裝置之襯套 單元,該電漿反應裝置具有一第一腔體以及一第二腔體,該襯套單元包含:一第一連接部,用於與該第一腔體連接,並且該第一連接部與該第一腔體之一內側壁的結構互補;以及一第二連接部,用於與該第二腔體之一對接部對接,其中該第一連接部及第二連接部兩者的横向邊長尺寸不同。For the above purposes, the present invention provides a bushing for a plasma reactor a plasma reaction device having a first cavity and a second cavity, the bushing unit comprising: a first connecting portion for connecting with the first cavity, and the first connecting portion and the The inner side wall of one of the first cavities is complementary in structure; and a second connecting portion is for abutting with one of the second cavities, wherein the lateral sides of the first connecting portion and the second connecting portion are long Different sizes.

於本創作其中之一較佳實施例當中,該第一連接部的横向邊長尺寸小於該第二連接部的横向邊長尺寸。In a preferred embodiment of the present invention, the lateral length of the first connecting portion is smaller than the lateral length of the second connecting portion.

於本創作其中之一較佳實施例當中,該襯套單元之該第一連接部與該第一腔體結合後,該襯套單元之該第二連接部突伸出該第一腔體之一第一端口,並且該第二連接部收容於該第二腔體之內。In a preferred embodiment of the present invention, after the first connecting portion of the bushing unit is coupled to the first cavity, the second connecting portion of the bushing unit protrudes from the first cavity. a first port, and the second connecting portion is received in the second cavity.

於本創作其中之一較佳實施例當中,該第一連接部的横向邊長尺寸大於該第二連接部的横向邊長尺寸。In a preferred embodiment of the present invention, the lateral length of the first connecting portion is larger than the lateral length of the second connecting portion.

於本創作其中之一較佳實施例當中,該襯套單元之該第一連接部與該第一腔體結合後,該第二腔體之該對接部突伸入該襯套單元,並且收容於該襯套單元之內。In a preferred embodiment of the present invention, after the first connecting portion of the bushing unit is coupled to the first cavity, the abutting portion of the second cavity protrudes into the bushing unit and is received Within the bushing unit.

於本創作其中之一較佳實施例當中,該電漿反應裝置包含一第三腔體,並且該襯套單元進一步包含一第三連接部,相對於該第二連接 部,該襯套單元連貫該第二腔體並且該第三連接部係用於與該第三腔體之一對接部連接。In a preferred embodiment of the present invention, the plasma reactor includes a third cavity, and the bushing unit further includes a third connection relative to the second connection The bushing unit is continuous with the second cavity and the third connecting portion is for connecting with one of the third cavity abutting portions.

於本創作其中之一較佳實施例當中,該第一連接部及該第三連接部兩者的横向邊長尺寸不同。In a preferred embodiment of the present invention, the lateral lengths of the first connecting portion and the third connecting portion are different in size.

於本創作其中之一較佳實施例當中,該第一連接部和該第二連接部兩者至少其中之一包含環形結構或其他幾何結構。In a preferred embodiment of the present invention, at least one of the first connection portion and the second connection portion comprises an annular structure or other geometric structure.

於本創作其中之一較佳實施例當中,該襯套單元進一步包含一第一襯套和一第二襯套,其中該第一襯套和該第二襯套分別包含用於與該第一腔體連接之該第一連接部和用於與另一腔體連接之該第二連接部,該第一襯套之該第一連接部及第二連接部兩者的横向邊長尺寸不同,以及該第二襯套之該第一連接部及第二連接部兩者的横向邊長尺寸不同。In a preferred embodiment of the present invention, the bushing unit further includes a first bushing and a second bushing, wherein the first bushing and the second bushing respectively comprise The first connecting portion of the cavity is connected to the second connecting portion for connecting to the other cavity, and the first connecting portion and the second connecting portion of the first bushing have different lateral lengths, And the lateral side lengths of the first connecting portion and the second connecting portion of the second bushing are different.

於本創作其中之一較佳實施例當中,該第一襯套和該第二襯套分別包含結構互補的第三連接部,並且當該第一襯套和該第二襯套分別與該第一腔體結合後,該第一襯套和該第二襯套的該等第三連接部互相接合。In a preferred embodiment of the present invention, the first bushing and the second bushing respectively comprise a third connecting portion having a complementary structure, and when the first bushing and the second bushing are respectively associated with the first bushing After the one cavity is combined, the third connecting portions of the first bushing and the second bushing are engaged with each other.

於本創作其中之一較佳實施例當中,該襯套單元進一步包含複數個襯套,其中該複數個襯套分別包含用於與該第一腔體連接之該第一連接部和用於與另一腔體連接之該第二連接部,該複數個襯套之該第一連接部及第二連接部兩者的横向邊長尺寸不同。In a preferred embodiment of the present invention, the bushing unit further includes a plurality of bushings, wherein the plurality of bushings respectively include the first connecting portion for connecting with the first cavity and for The second connecting portion of the other cavity is different in the lateral side length of the first connecting portion and the second connecting portion of the plurality of bushes.

於本創作其中之一較佳實施例當中,當該襯套單元之該第二連接部與該第二腔體之該對接部對接後,該第二連接部與該第二腔體之間形成一容置空間,用於容置一氣密元件。In a preferred embodiment of the present invention, after the second connecting portion of the bushing unit is butted against the abutting portion of the second cavity, the second connecting portion and the second cavity are formed. A housing space for accommodating an airtight component.

於本創作其中之一較佳實施例當中,該襯套單元之該第二連 接部形成為一階梯狀,包含一第一階、一第二階和一第三階,當該襯套單元之該第二連接部與該第二腔體之該對接部對接後,該第二腔體之該對接部與該第一階之一第一水平階梯面和該第三階之一第三水平階梯面連接,並且與該第二階共同形成容置該氣密元件的該容置空間。In a preferred embodiment of the present invention, the second connection of the bushing unit The joint portion is formed in a stepped shape, and includes a first step, a second step, and a third step. When the second connecting portion of the bushing unit is butted against the mating portion of the second cavity, the first portion The abutting portion of the two cavity is connected to the first horizontal step surface of the first step and the third horizontal step surface of the third step, and together with the second step forms a capacity for receiving the airtight component Set the space.

本創作還提供一種用於電漿反應裝置之襯套單元,該電漿反 應裝置具有一第一腔體以及複數個第二腔體,該襯套單元包含:一第一連接部,用於與該第一腔體連接,並且該第一連接部與該第一腔體之一內側壁的結構互補;以及複數個第二連接部,用於分別與該複數個第二腔體之一對接部對接,其中該第一連接部及每一該第二連接部兩者的横向邊長尺寸不同。The present invention also provides a bushing unit for a plasma reactor, the plasma counter The device has a first cavity and a plurality of second cavities, the bushing unit comprising: a first connecting portion for connecting with the first cavity, and the first connecting portion and the first cavity One of the inner side walls is complementary in structure; and a plurality of second connecting portions are respectively connected to the one of the plurality of second cavities, wherein the first connecting portion and each of the second connecting portions are The lateral side lengths are different in size.

10‧‧‧電漿反應裝置10‧‧‧ Plasma reactor

11‧‧‧第一腔體11‧‧‧First cavity

12‧‧‧第二腔體12‧‧‧Second cavity

13‧‧‧第三腔體13‧‧‧ third cavity

100‧‧‧電漿反應裝置100‧‧‧ plasma reactor

110‧‧‧襯套單元110‧‧‧ Bushing unit

112‧‧‧第一連接部112‧‧‧First connection

114‧‧‧第二連接部114‧‧‧Second connection

120‧‧‧第一腔體120‧‧‧First cavity

122‧‧‧內側壁122‧‧‧ inner side wall

124‧‧‧第一端口124‧‧‧First port

130‧‧‧第二腔體130‧‧‧Second cavity

132‧‧‧對接部132‧‧‧Docking Department

200‧‧‧電漿反應裝置200‧‧‧ plasma reactor

210‧‧‧襯套單元210‧‧‧ Bushing unit

212‧‧‧第一連接部212‧‧‧First connection

132’‧‧‧第二連接部132’‧‧‧Second connection

130’‧‧‧第一腔體130’‧‧‧First cavity

230‧‧‧第二腔體230‧‧‧Second cavity

232‧‧‧對接部232‧‧‧Docking Department

210’‧‧‧第二襯套單元210'‧‧‧Second bushing unit

300‧‧‧電漿反應裝置300‧‧‧ Plasma reactor

310‧‧‧襯套單元310‧‧‧Blint unit

312‧‧‧第一連接部312‧‧‧ First connection

314‧‧‧第二連接部314‧‧‧Second connection

316‧‧‧第三連接部316‧‧‧ Third connection

320‧‧‧第一腔體320‧‧‧First cavity

322‧‧‧內側壁322‧‧‧ inner side wall

330‧‧‧第二腔體330‧‧‧Second cavity

332‧‧‧對接部332‧‧‧Docking Department

340‧‧‧第三腔體340‧‧‧ third cavity

342‧‧‧對接部342‧‧‧Docking Department

400‧‧‧電漿反應裝置400‧‧‧plasma reactor

410‧‧‧襯套單元410‧‧‧ Bushing unit

412‧‧‧第一連接部412‧‧‧First connection

414‧‧‧第二連接部414‧‧‧Second connection

420‧‧‧第一腔體420‧‧‧First cavity

422‧‧‧內側壁422‧‧‧ inner side wall

500‧‧‧電漿反應裝置500‧‧‧ plasma reactor

510‧‧‧襯套單元510‧‧‧ Bushing unit

501‧‧‧第一襯套501‧‧‧First bushing

505‧‧‧第二襯套505‧‧‧second bushing

512、512’‧‧‧第一連接部512, 512'‧‧‧ first connection

514、514’‧‧‧第二連接部514, 514’ ‧ ‧ second connection

516、516’‧‧‧第三連接部516, 516’ ‧ ‧ third connection

520‧‧‧第一腔體520‧‧‧First cavity

522‧‧‧內側壁522‧‧‧ inner side wall

600‧‧‧電漿反應裝置600‧‧‧plasma reactor

610‧‧‧襯套單元610‧‧‧Blint unit

602‧‧‧第一襯套602‧‧‧First bushing

604‧‧‧第二襯套604‧‧‧second bushing

606‧‧‧第三襯套606‧‧‧ Third bushing

6022、6042、6062‧‧‧第一連接部6022, 6042, 6062‧‧‧ first connection

6024、6044、6064‧‧‧第二連接部6024, 6044, 6064‧‧‧second connection

6026、6046、6066‧‧‧第三連接部6026, 6046, 6066‧‧‧ third connection

620‧‧‧第一腔體620‧‧‧First cavity

622‧‧‧內側壁622‧‧‧ inner side wall

700‧‧‧電漿反應裝置700‧‧‧plasma reactor

710‧‧‧襯套單元710‧‧‧ Bushing unit

714‧‧‧第二連接部714‧‧‧Second connection

7142‧‧‧第一水平階梯面7142‧‧‧First horizontal step surface

7144‧‧‧第二水平階梯面7144‧‧‧Second horizontal step surface

730‧‧‧第二腔體730‧‧‧Second cavity

732‧‧‧對接部732‧‧‧Docking Department

750‧‧‧氣密元件750‧‧‧ airtight components

800‧‧‧電漿反應裝置800‧‧‧ plasma reactor

810‧‧‧襯套單元810‧‧‧ Bushing unit

814‧‧‧第二連接部814‧‧‧Second connection

8142‧‧‧第一水平階梯面8142‧‧‧First horizontal step surface

8144‧‧‧第二水平階梯面8144‧‧‧second horizontal step surface

8146‧‧‧第三水平階梯面8146‧‧‧ third horizontal step surface

830‧‧‧第二腔體830‧‧‧Second cavity

832‧‧‧對接部832‧‧‧Docking Department

850‧‧‧氣密元件850‧‧‧ airtight components

C1、C2、C3、C1’、C2’、C3’、C1”、C2”、C3”‧‧‧横向邊長尺寸C1, C2, C3, C1', C2', C3', C1", C2", C3" ‧‧‧ lateral side length dimensions

第1圖顯示一種傳統的電漿反應裝置。Figure 1 shows a conventional plasma reactor.

第2圖顯示一種根據本創作之第一實施例之襯套單元與電漿反應裝置的組裝爆炸圖。Fig. 2 shows an exploded view of the assembly of the bushing unit and the plasma reactor according to the first embodiment of the present invention.

第3圖顯示第2圖之局部組裝視圖。Figure 3 shows a partial assembled view of Figure 2.

第4圖顯示第2圖之襯套單元與電漿反應裝置之剖面爆炸圖。Figure 4 is a cross-sectional exploded view of the bushing unit and the plasma reactor of Figure 2.

第5圖顯示一種根據本創作之第二實施例之襯套單元與電漿反應裝置的剖面爆炸圖。Fig. 5 is a cross-sectional exploded view showing a bushing unit and a plasma reactor according to a second embodiment of the present invention.

第6圖顯示一種根據本創作之第三實施例之襯套單元與電漿反應裝置的剖面組裝視圖。Figure 6 shows a cross-sectional assembled view of a bushing unit and a plasma reactor in accordance with a third embodiment of the present invention.

第7圖顯示一種根據本創作之第四實施例之襯套單元與電漿反應裝置的組裝爆炸圖。Fig. 7 shows an exploded view of the assembly of the bushing unit and the plasma reactor according to the fourth embodiment of the present invention.

第8圖顯示第7圖之襯套單元與電漿反應裝置之剖面爆炸圖。Figure 8 is a cross-sectional exploded view of the bushing unit and the plasma reactor of Figure 7.

第9圖顯示一種根據本創作之第五實施例之襯套單元與電漿反應裝置的剖面爆炸圖。Fig. 9 is a cross-sectional exploded view showing a bushing unit and a plasma reactor according to a fifth embodiment of the present invention.

第10圖顯示第9圖之剖面組裝視圖。Figure 10 shows a cross-sectional assembled view of Figure 9.

第11圖顯示一種根據本創作之第六實施例之襯套單元與電漿反應裝置的剖面爆炸圖。Figure 11 is a cross-sectional exploded view showing a bushing unit and a plasma reactor according to a sixth embodiment of the present invention.

第12圖顯示一種根據本創作之第七實施例之襯套單元的局部放大視圖。Figure 12 shows a partial enlarged view of a bushing unit according to a seventh embodiment of the present invention.

第13圖顯示一種根據本創作之第八實施例之襯套單元的局部放大視圖。Figure 13 shows a partial enlarged view of a bushing unit according to an eighth embodiment of the present invention.

為了讓本創作之上述及其他目的、特徵、優點能更明顯易懂,下文將特舉本創作較佳實施例,並配合所附圖式,作詳細說明如下。In order to make the above and other objects, features and advantages of the present invention more comprehensible, the preferred embodiments of the present invention will be described in detail below.

請參照第2圖、第3圖及第4圖,係顯示一種根據本創作之第一實施例之用於電漿反應裝置100之襯套單元110,其中第2圖顯示該襯套單元110與該電漿反應裝置100的組裝爆炸圖,第3圖顯示第2圖之該襯套單元110與該電漿反應裝置100之局部組裝視圖,以及第4圖顯示第2圖之該襯套單元110與電漿反應裝置100之剖面爆炸圖。該電漿反應裝置100具有一第一腔體120和一第二腔體130,以及該襯套單元110包含一第一連接部112和一 第二連接部114。Referring to FIGS. 2, 3, and 4, there is shown a bushing unit 110 for a plasma reactor 100 according to a first embodiment of the present invention, wherein FIG. 2 shows the bushing unit 110 and An exploded view of the assembly of the plasma reactor 100, FIG. 3 shows a partial assembled view of the bush unit 110 and the plasma reactor 100 of FIG. 2, and FIG. 4 shows the bush unit 110 of FIG. A cross-sectional exploded view of the plasma reactor 100. The plasma reactor 100 has a first cavity 120 and a second cavity 130, and the bushing unit 110 includes a first connecting portion 112 and a The second connecting portion 114.

如第2圖至第4圖所示,該襯套單元110之該第一連接部112 係與該第一腔體120相連接,並且該第一連接部112之外側壁與該第一腔體120之一相連接的內側壁122彼此的結構互補。如本創作之第一實施例所示,該第一連接部112之外側壁與該第一腔體120之內側壁122皆為環形的結構。可以理解的是,在其他實施例中相互結合的第一連接部之外側壁和第一腔體120內側壁彼此可為各種結構互補的幾何結構。As shown in FIGS. 2 to 4, the first connecting portion 112 of the bushing unit 110 The first cavity 120 is connected to the first cavity 120, and the inner sidewalls 122 of the first connecting portion 112 and the one of the first cavity 120 are complementary to each other. As shown in the first embodiment of the present invention, the outer sidewall of the first connecting portion 112 and the inner sidewall 122 of the first cavity 120 have an annular structure. It can be understood that the outer side walls of the first connecting portion and the inner side walls of the first cavity 120 which are combined with each other in other embodiments may be geometric structures complementary to each other.

另一方面,為了使該襯套單元110之該第一連接部112之外側 壁與該第一腔體120之內側壁122之間緊密配合,可以藉由例如在該第一連接部112之外側壁與該第一腔體120之該內側壁122的連接面分別形成結構互補的螺紋,使得兩者間可緊密的鎖固,或者是在兩者的接面塗覆陶瓷散熱膏或以真空螺絲等方式,但不侷限於此。除此之外,任何可以使該襯套單元110之該第一連接部112之外側壁與該第一腔體120之該內側壁122達到緊密配合的方法亦可適用於本創作的其他實施例中。On the other hand, in order to make the outer side of the first connecting portion 112 of the bushing unit 110 A tight fit between the wall and the inner sidewall 122 of the first cavity 120 can be complemented by, for example, a connecting surface between the outer sidewall of the first connecting portion 112 and the inner sidewall 122 of the first cavity 120. The thread can be tightly locked between the two, or the ceramic heat sink or the vacuum screw can be applied to the joint surface of the two, but is not limited thereto. In addition, any method that can make the outer side wall of the first connecting portion 112 of the bushing unit 110 and the inner side wall 122 of the first cavity 120 fit tightly can be applied to other embodiments of the present invention. in.

如第2圖至第4圖所示,當該襯套單元110之該第一連接部112 經由該第一腔體120之一第一端口124裝設入該第一腔體120,並且與該第一腔體120相結合後,將使該襯套單元110之該第二連接部114突伸出該第一腔體120之該第一端口124之外。接著,再將該襯套單元110與該第二腔體130進行組裝。如圖所示,該襯套單元110之該第二連接部114係用於與該第二腔體130之一對接部132對接。As shown in FIGS. 2 to 4, the first connecting portion 112 of the bushing unit 110 The first cavity 120 is mounted through the first port 124 of the first cavity 120, and after being combined with the first cavity 120, the second connecting portion 114 of the bushing unit 110 is caused to protrude. Extending out of the first port 124 of the first cavity 120. Next, the bushing unit 110 is assembled with the second cavity 130. As shown in the figure, the second connecting portion 114 of the bushing unit 110 is for abutting with one of the abutting portions 132 of the second cavity 130.

如第2圖至第4圖所示,該襯套單元110之該第一連接部112 的横向邊長尺寸C1與該第二連接部114的横向邊長尺寸C2不同。更明確的 說,如本創作第一實施例中所示,該第一連接部112的横向邊長尺寸C1係小於該第二連接部114的横向邊長尺寸C2,然而在其他實施例中亦可將第一連接部112的横向邊長尺寸C1設計為大於第二連接部114的横向邊長尺寸C2。As shown in FIGS. 2 to 4, the first connecting portion 112 of the bushing unit 110 The lateral side length dimension C1 is different from the lateral side length dimension C2 of the second connecting portion 114. More specific It is to be noted that, as shown in the first embodiment of the present invention, the lateral side length dimension C1 of the first connecting portion 112 is smaller than the lateral side length dimension C2 of the second connecting portion 114, but in other embodiments, the The lateral side length dimension C1 of one of the connecting portions 112 is designed to be larger than the lateral side length dimension C2 of the second connecting portion 114.

再者,該襯套單元110之該第二連接部114和該第二腔體130 相結合前,較佳地先在該第二連接部114的外側壁周圍放置O型環和/或陶瓷環和/或塗佈真空膏,使得該第一腔體120和該第二腔體130相結合後具有較佳的氣密度。除此之外,任何可以達成較佳氣密效果的方法亦可適用於本創作的其他實施例中。Furthermore, the second connecting portion 114 of the bushing unit 110 and the second cavity 130 Preferably, prior to bonding, an O-ring and/or a ceramic ring and/or a vacuum paste are placed around the outer sidewall of the second connecting portion 114 such that the first cavity 120 and the second cavity 130 When combined, it has a better gas density. In addition, any method that achieves a better airtight effect can be applied to other embodiments of the present creation.

請參照第5圖,其顯示一種根據本創作之第二實施例之襯套 單元210與電漿反應裝置200之剖面爆炸圖。該電漿反應裝置200包含一第一腔體130’和一第二腔體230,以及該襯套單元210包含一第一連接部212和一第二連接部132’。Please refer to FIG. 5, which shows a bushing according to a second embodiment of the present invention. A cross-sectional exploded view of unit 210 and plasma reactor 200. The plasma reactor 200 includes a first cavity 130' and a second cavity 230, and the bushing unit 210 includes a first connecting portion 212 and a second connecting portion 132'.

如第5圖所示,該襯套單元210之該第一連接部212係位於該 襯套單元210的外側壁,以及該襯套單元210之該第二連接部132’係位於該襯套單元210的內側壁,其中該襯套單元210之該第一連接部212的横向邊長尺寸C1與該第二連接部132’的横向邊長尺寸C2不同。更明確的說,該第一連接部212的横向邊長尺寸C1係大於該第二連接部132’的横向邊長尺寸C2。As shown in FIG. 5, the first connecting portion 212 of the bushing unit 210 is located at the same. The outer side wall of the bushing unit 210 and the second connecting portion 132' of the bushing unit 210 are located on the inner side wall of the bushing unit 210, wherein the lateral side of the first connecting portion 212 of the bushing unit 210 is long. The dimension C1 is different from the lateral side length dimension C2 of the second connecting portion 132'. More specifically, the lateral side length dimension C1 of the first connecting portion 212 is larger than the lateral side length dimension C2 of the second connecting portion 132'.

如第5圖所示,該襯套單元210之該第一連接部212與該第一 腔體130’的內側壁在結構上彼此互補,使得兩者可相互結合。因為該襯套單元210之該第二連接部132’係位於該襯套單元210的內側壁,所以當該襯套單元210之該第一連接部212與該第一腔體130’結合後,該第二腔體230之一對接部232係突伸入該襯套單元210,並且收容於該襯套單元210之內,其中該 對接部232係屬於該第二腔體230外側壁之一部分。再者,如圖所示,該第二腔體230可藉由單一個腔體與一第二襯套單元210’相互組裝而形成。As shown in FIG. 5, the first connecting portion 212 of the bushing unit 210 and the first The inner sidewalls of the cavity 130' are structurally complementary to one another such that the two can be joined to each other. Because the second connecting portion 132 ′ of the bushing unit 210 is located on the inner side wall of the bushing unit 210 , after the first connecting portion 212 of the bushing unit 210 is combined with the first cavity 130 ′, One of the abutting portions 232 of the second cavity 230 protrudes into the bushing unit 210 and is received in the bushing unit 210, wherein the The abutting portion 232 is part of the outer side wall of the second cavity 230. Furthermore, as shown, the second cavity 230 can be formed by assembling a single cavity with a second bushing unit 210'.

另一方面,本創作之單一個襯套單元亦可與複數個電漿反應 裝置的腔體相結合。舉例來說,在一較佳實施例中,電漿反應裝置可包含一第一腔體和複數個第二腔體,以及襯套單元可包含一第一連接部和複數個第二連接部,其中該第一連接部係用於與該第一腔體連接,並且該第一連接部與該第一腔體之一內側壁的結構互補。另外,該複數個第二連接部係用於分別與該複數個第二腔體之一對接部對接。為了更清楚說明上述實施例的技術方案,請參照下述第三實施例的具體描述。On the other hand, the single bushing unit of this creation can also react with a plurality of plasmas. The chambers of the device are combined. For example, in a preferred embodiment, the plasma reactor may include a first cavity and a plurality of second cavities, and the bushing unit may include a first connecting portion and a plurality of second connecting portions. Wherein the first connecting portion is for connecting with the first cavity, and the first connecting portion is complementary to the structure of the inner side wall of one of the first cavity. In addition, the plurality of second connecting portions are respectively used for docking with one of the plurality of second cavities. In order to more clearly illustrate the technical solutions of the above embodiments, please refer to the detailed description of the third embodiment described below.

請參照第6圖,其顯示一種根據本創作之第三實施例之襯套 單元310與電漿反應裝置300組合後之局部剖面圖。該電漿反應裝置300包含一第一腔體320、一第二腔體330及一第三腔體340,以及該襯套單元310包含一第一連接部312、第二連接部314及第三連接部316。應當注意的是,本實施例中的該第二腔體330及該第三腔體340相當於上述之複數個第二腔體,以及本實施例中的該第二連接部314及第三連接部316相當於上述之複數個第二連接部。並且,雖然在第6圖中所出示之該第二腔體330和該第三腔體340具有相同的構型和尺寸,然而,在其他較佳實施例中亦可包含具有不同構型和尺寸的複數個第二腔體,並且相對應的複數個第二連接部亦設置為具有不同構型和尺寸。Please refer to FIG. 6 , which shows a bushing according to a third embodiment of the present invention. A partial cross-sectional view of unit 310 in combination with plasma reactor 300. The plasma reaction device 300 includes a first cavity 320, a second cavity 330, and a third cavity 340, and the bushing unit 310 includes a first connecting portion 312, a second connecting portion 314, and a third portion. Connection portion 316. It should be noted that the second cavity 330 and the third cavity 340 in this embodiment are equivalent to the plurality of second cavities described above, and the second connecting portion 314 and the third connection in this embodiment. The portion 316 corresponds to the plurality of second connecting portions described above. Moreover, although the second cavity 330 and the third cavity 340 shown in FIG. 6 have the same configuration and size, in other preferred embodiments, different configurations and sizes may be included. The plurality of second cavities, and the corresponding plurality of second connections are also disposed to have different configurations and sizes.

如第6圖所示,該襯套單元310之該第二連接部314和第三連 接部316係分別位於該第一連接部312之相對的兩側,並且該第一連接部312、該第二連接部314和第三連接部316皆形成於該襯套單元310之外側 壁,該第一連接部312用於與該第一腔體320之一內側壁322相結合。並且,該襯套單元310藉由將該第二連接部314與該第二腔體330之一對接部332相結合,使得該襯套單元310連貫該第二腔體330,以及進一步藉由該第三連接部316與該第三腔體340之一對接部342相結合。該對接部332係屬於該第三腔體340內側壁之一部分。As shown in FIG. 6, the second connecting portion 314 and the third connecting portion of the bushing unit 310 The connecting portions 316 are respectively located at opposite sides of the first connecting portion 312, and the first connecting portion 312, the second connecting portion 314 and the third connecting portion 316 are all formed on the outer side of the bushing unit 310. The first connecting portion 312 is configured to be coupled to the inner side wall 322 of the first cavity 320. The bushing unit 310 is coupled to the abutting portion 332 of the second cavity 330 such that the bushing unit 310 is continuous with the second cavity 330, and further by the The third connecting portion 316 is combined with one of the abutting portions 342 of the third cavity 340. The abutting portion 332 belongs to a portion of the inner side wall of the third cavity 340.

如第6圖所示,該襯套單元310的兩相對端外側壁同樣係設計 為公頭的構型。即,將該襯套單元310之該第一連接部312外側壁與該第一腔體320之該內側壁322相結合後,使該襯套單元310之該第二連接部314和該第三連接部316係分別突伸出該第一腔體320之相對的兩端口。值得注意的是,在另一實施例中,可根據電漿製程原理,依照該電漿反應裝置300在運作上所產生的磁力線方向,將相似於本實施例之該襯套單元310之該第二連接部314和該第三連接部316的其中之一設計為母頭的構型。之後,再將與其對接的腔體裝設一第二襯套單元,其一端係突伸出該腔體之端口(如第5圖所示之第二實施例的第二腔體230)。也就是說,該襯套單元之其中之一連接部設置在該襯套單元之內側壁部,用於收容對接腔體之對接部。As shown in FIG. 6, the outer side walls of the opposite ends of the bushing unit 310 are also designed. The configuration of the male. That is, after the outer sidewall of the first connecting portion 312 of the bushing unit 310 is combined with the inner sidewall 322 of the first cavity 320, the second connecting portion 314 and the third portion of the bushing unit 310 are made. The connecting portion 316 protrudes from the opposite two ports of the first cavity 320, respectively. It should be noted that, in another embodiment, according to the plasma processing principle, according to the direction of magnetic lines of force generated by the plasma reaction device 300, the same as the bush unit 310 of the embodiment. One of the two connecting portions 314 and the third connecting portion 316 is designed as a female head. Then, a cavity of the second bushing unit is disposed on the cavity, and one end of the cavity is protruded from the port of the cavity (such as the second cavity 230 of the second embodiment shown in FIG. 5). That is to say, one of the connecting portions of the bushing unit is disposed on the inner side wall portion of the bushing unit for receiving the abutting portion of the mating cavity.

如第6圖所示,該襯套單元310之該第一連接部310的横向邊 長尺寸C1與該第二連接部314及第三連接部316的横向邊長尺寸C2不同。更明確的說,該第一連接部310的横向邊長尺寸C1係大於該第二連接部314及第三連接部316的横向邊長尺寸C2。應當注意的是,本創作第三實施例中所出示的第二腔體和第三腔體的數量僅係作為示例,更進一步,應配合電漿反應裝置之種類與型式,襯套單元所連接之腔體數可為複數個,且並非用於限定本創作。As shown in FIG. 6, the lateral side of the first connecting portion 310 of the bushing unit 310 The long dimension C1 is different from the lateral side length dimension C2 of the second connecting portion 314 and the third connecting portion 316. More specifically, the lateral side length dimension C1 of the first connecting portion 310 is greater than the lateral side length dimension C2 of the second connecting portion 314 and the third connecting portion 316. It should be noted that the number of the second cavity and the third cavity shown in the third embodiment of the present invention is merely an example, and further, it should be matched with the type and type of the plasma reaction device, and the bushing unit is connected. The number of cavities can be plural and is not intended to limit the creation.

請參照第7圖和第8圖,第7圖顯示一種根據本創作之第四實 施例之襯套單元410與電漿反應裝置400的組裝爆炸圖,以及第8圖顯示第7圖之電漿反應裝置400之剖面爆炸圖。該電漿反應裝置400包含具有一內側壁422之一第一腔體420,以及該襯套單元410包含一第一連接部412和一第二連接部414,其中該一第一連接部412係用於與該第一腔體420相結合以及該第二連接部414係用於與一第二腔體(未出示)相結合。Please refer to FIG. 7 and FIG. 8 , and FIG. 7 shows a fourth real according to the present creation. The exploded view of the assembly of the bushing unit 410 and the plasma reactor 400 of the embodiment, and the exploded view of the section of the plasma reactor 400 of FIG. The plasma reaction device 400 includes a first cavity 420 having an inner sidewall 422, and the bushing unit 410 includes a first connecting portion 412 and a second connecting portion 414, wherein the first connecting portion 412 is For bonding with the first cavity 420 and the second connecting portion 414 for combining with a second cavity (not shown).

如第7圖和第8圖所示,用於與該襯套單元410之該第一連接 部412相結合的該第一腔體420之該內側壁422係呈現長盤型結構,有別於前述實施例中的環型結構。並且,該第一連接部412之最大的横向邊長C1的尺寸係大於該襯套單元410之該第二連接部414的横向邊長C2的尺寸。As shown in FIGS. 7 and 8, for the first connection with the bushing unit 410 The inner side wall 422 of the first cavity 420 combined with the portion 412 exhibits a long disc type structure, which is different from the ring type structure in the foregoing embodiment. Moreover, the dimension of the largest lateral side length C1 of the first connecting portion 412 is greater than the dimension of the lateral side length C2 of the second connecting portion 414 of the bushing unit 410.

請參照第9圖和第10圖,第9圖顯示一種根據本創作之第五實 施例之襯套單元510與電漿反應裝置500之的剖面爆炸圖,以及第10圖顯示第9圖之剖面組裝視圖。該電漿反應裝置500包含具有一內側壁522之一第一腔體520,以及該襯套單元510包含一第一襯套501和一第二襯套505,分設於該第一腔體520之兩相對端,其中該第一襯套501和該第二襯套505分別包含用於與該第一腔體520連接之一第一連接部512和512’和用於與另一腔體(未出示)連接之該第二連接部514和514’。Please refer to FIG. 9 and FIG. 10, and FIG. 9 shows a fifth embodiment according to the present creation. The cross-sectional exploded view of the bushing unit 510 and the plasma reactor 500 of the embodiment, and the cross-sectional assembled view of Fig. 9 are shown in Fig. 10. The plasma reaction device 500 includes a first cavity 520 having an inner sidewall 522, and the bushing unit 510 includes a first bushing 501 and a second bushing 505 disposed in the first cavity 520. The opposite ends of the first bushing 501 and the second bushing 505 respectively comprise a first connecting portion 512 and 512' for connecting with the first cavity 520 and for connecting with another cavity ( The second connecting portions 514 and 514' are connected.

如第9圖和第10圖所示,該襯套單元510之該第一襯套501和 該第二襯套505皆為不規則的幾何構型。該第一襯套501和該第二襯套505分別包含結構互補的第三連接部516和516’,並且當該第一襯套501和該第二襯套505分別與該第一腔體520上下結合後,進一步使該第一襯套501和該第二襯套505的該等第三連接部516和516’互相接合。值得注意的是,該等第三連 接部516和516’包含各種結構互補的構型,例如倒鉤狀、斜角狀或者是諸如此類。As shown in FIGS. 9 and 10, the first bushing 501 of the bushing unit 510 and The second bushings 505 are all in an irregular geometric configuration. The first bushing 501 and the second bushing 505 respectively include structurally complementary third connecting portions 516 and 516 ′, and when the first bushing 501 and the second bushing 505 are respectively coupled to the first cavity 520 After the upper and lower joints, the third connecting portions 516 and 516' of the first bushing 501 and the second bushing 505 are further engaged with each other. It is worth noting that these third companies The joints 516 and 516' comprise configurations in which the various structures are complementary, such as barbed, beveled or the like.

如第9圖和第10圖所示,該第一襯套501之該第一連接部512 的最大横向邊長尺寸定義為C1,該第一襯套501之該第二連接部514的横向邊長尺寸定義為C2,以及該第一襯套501之該第三連接部516的横向邊長尺寸定義為C3,其中C1、C2及C3的尺寸皆不同。同理,該第二襯套505之該第一連接部512’的横向邊長尺寸C1’分別與該第二連接部514’的横向邊長尺寸C2’和該第三連接部516’的横向邊長尺寸C3’不同。As shown in FIG. 9 and FIG. 10, the first connecting portion 512 of the first bushing 501 The maximum lateral side length dimension is defined as C1, the lateral side length dimension of the second connecting portion 514 of the first bushing 501 is defined as C2, and the lateral side length of the third connecting portion 516 of the first bushing 501. The size is defined as C3, where C1, C2, and C3 are all different in size. Similarly, the lateral side length dimension C1' of the first connecting portion 512' of the second bushing 505 and the lateral side length dimension C2' of the second connecting portion 514' and the lateral direction of the third connecting portion 516', respectively. Side length C3' is different.

請參照第11圖,顯示一種根據本創作之第六實施例之襯套單 元610與電漿反應裝置600之的剖面爆炸圖。該電漿反應裝置600包含具有一內側壁622之一第一腔體620,以及該襯套單元610包含一第一襯套602、一第二襯套604及一第三襯套606,其中該第一襯套602與第二襯套604設於該第一腔體620之一端,以及該第三襯套606設於該第一腔體620之相對另一端。該第一襯套602、該第二襯套604及該第三襯套606分別包含用於與該第一腔體620連接之第一連接部6022、6042、6062和用於與另一腔體(未出示)連接之第二連接部6024、6044、6064。Referring to FIG. 11, a bushing according to a sixth embodiment of the present invention is shown. A cross-sectional exploded view of element 610 and plasma reactor 600. The plasma reaction device 600 includes a first cavity 620 having an inner sidewall 622, and the bushing unit 610 includes a first bushing 602, a second bushing 604, and a third bushing 606. The first bushing 602 and the second bushing 604 are disposed at one end of the first cavity 620 , and the third bushing 606 is disposed at the opposite end of the first cavity 620 . The first bushing 602, the second bushing 604 and the third bushing 606 respectively include a first connecting portion 6022, 6042, 6062 for connecting with the first cavity 620 and for another cavity (not shown) the connected second connecting portions 6024, 6044, 6064.

如第11圖所示,該第一襯套602之該第一連接部6022的最大 横向邊長尺寸定義為C1,該第二連接部6024的横向邊長尺寸定義為C2,以及該第三連接部6026的横向邊長尺寸定義為C3,其中C1的尺寸與C2及C3的尺寸不同。同理,該第二襯套604之該第一連接部6042的横向邊長尺寸C1’分別與該第二連接部6044的横向邊長尺寸C2’和該第三連接部6046的横向邊長尺寸C3’不同;以及該第二襯套606之該第一連接部6062的横向邊長尺 寸C1”分別與該第二連接部6064的横向邊長尺寸C2”和該第三連接部6066的横向邊長尺寸C3”不同。As shown in FIG. 11, the maximum of the first connecting portion 6022 of the first bushing 602 The lateral side length dimension is defined as C1, the lateral side length dimension of the second connecting portion 6024 is defined as C2, and the lateral side length dimension of the third connecting portion 6026 is defined as C3, wherein the size of C1 is different from the sizes of C2 and C3. . Similarly, the lateral side length dimension C1 of the first connecting portion 6042 of the second bushing 604 and the lateral side length dimension C2' of the second connecting portion 6044 and the lateral side length dimension of the third connecting portion 6046, respectively. C3' is different; and the lateral length of the first connecting portion 6062 of the second bushing 606 The inch C1" is different from the lateral side length dimension C2" of the second connecting portion 6064 and the lateral side length dimension C3" of the third connecting portion 6066, respectively.

如第11圖所示,該第一襯套602、該第二襯套604及該第三襯 套606分別包含結構互補的第三連接部6026、6046、6066,並且當該第一襯套602、該第二襯套604及該第三襯套606分別與該第一腔體620上下結合後,進一步使該第一襯套602、該第二襯套604及該第三襯套606的該等第三連接部6026、6046、6066互相接合。As shown in FIG. 11 , the first bushing 602, the second bushing 604 and the third lining The sleeves 606 respectively include third connecting portions 6026, 6046, and 6066 having complementary structures, and when the first bushing 602, the second bushing 604, and the third bushing 606 are respectively coupled to the first cavity 620, The third connecting portions 6026, 6046, and 6066 of the first bushing 602, the second bushing 604, and the third bushing 606 are further joined to each other.

經由上述實施例可知,本創作除了可藉由一件式的襯套單元對應一個以上的腔體以外,也可藉由多件式的襯套單元對應單一個腔體。例如根據本創作第五實施例,該襯套單元510包含第一襯套501和第二襯套505,並且該等襯套係分別與同一個第一腔體520結合,或者是,如第六實施例之包含三件式的襯套單元610,但不侷限於此。According to the above embodiment, in addition to the one-piece bushing unit corresponding to one or more cavities, the multi-piece bushing unit can also correspond to a single cavity. For example, according to the fifth embodiment of the present creation, the bushing unit 510 includes a first bushing 501 and a second bushing 505, and the bushings are respectively combined with the same first cavity 520, or, as in the sixth The embodiment includes a three-piece bushing unit 610, but is not limited thereto.

請參照第12圖,其顯示一種根據本創作之第七實施例之襯套單元710的局部放大視圖。在本實施例中,該襯套單元710之第二連接部714的外型呈現兩階式的階梯狀,包含一第一水平階梯面7142和一第二水平階梯面7144。當該襯套單元710之該第二連接部714與一第二腔體730之一對接部732對接後,該第二腔體730之該對接部732與部分的該第一水平階梯面7142和該第二水平階梯面7144連接,並且在該第二連接部714與該第二腔體730之間形成一密閉的容置空間。該容置空間可用於容置一氣密元件750,例如:氣密環。Referring to Fig. 12, there is shown a partial enlarged view of a bushing unit 710 according to a seventh embodiment of the present invention. In this embodiment, the second connecting portion 714 of the bushing unit 710 has a two-step shape and includes a first horizontal step surface 7142 and a second horizontal step surface 7144. After the second connecting portion 714 of the bushing unit 710 is butted against a mating portion 732 of the second cavity 730, the abutting portion 732 of the second cavity 730 and a portion of the first horizontal step surface 7142 and The second horizontal step surface 7144 is connected, and a sealed accommodating space is formed between the second connecting portion 714 and the second cavity 730. The accommodating space can be used to accommodate an airtight member 750, such as an airtight ring.

請參照第13圖,其顯示一種根據本創作之第八實施例之襯套單元810的局部放大視圖。該襯套單元810之該第二連接部814的外型呈現三 階式的階梯狀,包含具有一第一水平階梯面8142的一第一階、具有一第二水平階梯面8144的一第二階和具有一第三水平階梯面8146的一第三階。當該襯套單元810之該第二連接部814與一第二腔體830之一對接部832對接後,該第二腔體830之該對接部832與該襯套單元810之該第一階的該第一水平階梯面8142和該第三階的該第三水平階梯面8146連接,並且該第二腔體830之該對接部832與該第二階共同形成容置一氣密元件850的容置空間。應當注意的是,在本創作中,藉由設置為上述第12圖或第13圖所示樣態的的氣密結構,使得本創作不需設置一附加的陶瓷環,即可確保第一腔體之襯套單元與第二腔體之間具有良好的氣密效果,因而降低了製造成本。另外,經由上述設置還可避免因腔體的熱變形及扭曲造成的漏氣及電漿腐蝕的問題。Referring to Fig. 13, there is shown a partial enlarged view of a bushing unit 810 according to an eighth embodiment of the present invention. The appearance of the second connecting portion 814 of the bushing unit 810 presents three The stepped shape of the step includes a first step having a first horizontal step surface 8142, a second step having a second horizontal step surface 8144, and a third step having a third horizontal step surface 8146. After the second connecting portion 814 of the bushing unit 810 is butted against a mating portion 832 of the second cavity 830, the abutting portion 832 of the second cavity 830 and the first step of the bushing unit 810 The first horizontal step surface 8142 is connected to the third horizontal step surface 8146 of the third stage, and the abutting portion 832 of the second cavity 830 and the second step together form a capacity for accommodating an airtight member 850. Set the space. It should be noted that in the present creation, the airtight structure provided as shown in the above FIG. 12 or FIG. 13 makes it possible to ensure the first cavity without providing an additional ceramic ring. The bushing unit of the body has a good airtight effect with the second cavity, thereby reducing the manufacturing cost. In addition, the above problems can also avoid problems of air leakage and plasma corrosion caused by thermal deformation and distortion of the cavity.

雖然本創作已用較佳實施例揭露如上,然其並非用以限定本 創作,本創作所屬技術領域中具有通常知識者,在不脫離本創作之精神和範圍內,當可作各種之更動與潤飾,因此本創作之保護範圍當視後附之申請專利範圍所界定者為準。Although the present invention has been disclosed above in the preferred embodiment, it is not intended to limit the present invention. Creation, who has the usual knowledge in the technical field of this creation, can make various changes and refinements without departing from the spirit and scope of this creation. Therefore, the scope of protection of this creation is defined by the scope of the patent application attached. Prevail.

100‧‧‧電漿反應裝置100‧‧‧ plasma reactor

110‧‧‧襯套單元110‧‧‧ Bushing unit

112‧‧‧第一連接部112‧‧‧First connection

114‧‧‧第二連接部114‧‧‧Second connection

120‧‧‧第一腔體120‧‧‧First cavity

122‧‧‧內側壁122‧‧‧ inner side wall

124‧‧‧第一端口124‧‧‧First port

130‧‧‧第二腔體130‧‧‧Second cavity

132‧‧‧對接部132‧‧‧Docking Department

C1、C2‧‧‧横向邊長尺寸C1, C2‧‧‧ lateral side length dimensions

Claims (14)

一種用於電漿反應裝置之襯套單元,該電漿反應裝置具有一第一腔體以及一第二腔體,該襯套單元包含:一第一連接部,用於與該第一腔體連接,並且該第一連接部與該第一腔體之一內側壁的結構互補;以及一第二連接部,用於與該第二腔體之一對接部對接,其中該第一連接部及第二連接部兩者的横向邊長尺寸不同。A bushing unit for a plasma reactor, the plasma reactor having a first cavity and a second cavity, the bushing unit comprising: a first connecting portion for the first cavity Connecting, and the first connecting portion is complementary to the structure of the inner side wall of the first cavity; and a second connecting portion for abutting with the one of the second cavity, wherein the first connecting portion and Both of the second connecting portions have different lateral side lengths. 如申請專利範圍第1項所述之襯套單元,其中該第一連接部的横向邊長尺寸小於該第二連接部的横向邊長尺寸。The bushing unit of claim 1, wherein the first connecting portion has a lateral side length dimension smaller than a lateral side length dimension of the second connecting portion. 如申請專利範圍第1項所述之襯套單元,其中該襯套單元之該第一連接部與該第一腔體結合後,該襯套單元之該第二連接部突伸出該第一腔體之一第一端口,並且該第二連接部收容於該第二腔體之內。The bushing unit of claim 1, wherein the second connecting portion of the bushing unit protrudes from the first connecting portion of the bushing unit One of the first ports of the cavity, and the second connecting portion is received within the second cavity. 如申請專利範圍第1項所述之襯套單元,其中該第一連接部的横向邊長尺寸大於該第二連接部的横向邊長尺寸。The bushing unit of claim 1, wherein the first connecting portion has a lateral side length dimension greater than a lateral side length dimension of the second connecting portion. 如申請專利範圍第1項所述之襯套單元,其中該襯套單元之該第一連接部與該第一腔體結合後,該第二腔體之該對接部突伸入該襯套單元,並且收容於該襯套單元之內。The bushing unit of claim 1, wherein the abutting portion of the second cavity protrudes into the bushing unit after the first connecting portion of the bushing unit is coupled to the first cavity And housed in the bushing unit. 如申請專利範圍第1項所述之襯套單元,其中該電漿反應裝置包含一第三腔體,並且該襯套單元進一步包含一第三連接部,相對於該第二連接部,該襯套單元連貫該第二腔體並且該第三連接部係用於與該第三腔體之一對接部連接。The bushing unit of claim 1, wherein the plasma reaction device comprises a third cavity, and the bushing unit further comprises a third connecting portion, the lining relative to the second connecting portion The sleeve unit is continuous with the second cavity and the third connection portion is for connecting with one of the third cavity abutments. 如申請專利範圍第6項所述之襯套單元,其中該第一連接部及該第三連 接部兩者的横向邊長尺寸不同。The bushing unit of claim 6, wherein the first connecting portion and the third connecting unit The lateral side lengths of the joints are different in size. 如申請專利範圍第1項所述之襯套單元,其中該第一連接部和該第二連接部兩者至少其中之一包含環形結構或其他幾何結構。The bushing unit of claim 1, wherein at least one of the first connecting portion and the second connecting portion comprises an annular structure or other geometric structure. 如申請專利範圍第1項所述之襯套單元,進一步包含一第一襯套和一第二襯套,其中該第一襯套和該第二襯套分別包含用於與該第一腔體連接之該第一連接部和用於與另一腔體連接之該第二連接部,該第一襯套之該第一連接部及第二連接部兩者的横向邊長尺寸不同,以及該第二襯套之該第一連接部及第二連接部兩者的横向邊長尺寸不同。The bushing unit of claim 1, further comprising a first bushing and a second bushing, wherein the first bushing and the second bushing respectively comprise a first cavity and the first cavity Connecting the first connecting portion and the second connecting portion for connecting to another cavity, wherein the first connecting portion and the second connecting portion of the first bush have different lateral side lengths, and The first side connecting portion and the second connecting portion of the second bushing have different lateral side lengths. 如申請專利範圍第9項所述之襯套單元,其中該第一襯套和該第二襯套分別包含結構互補的第三連接部,並且當該第一襯套和該第二襯套分別與該第一腔體結合後,該第一襯套和該第二襯套的該等第三連接部互相接合。The bushing unit of claim 9, wherein the first bushing and the second bushing respectively comprise a structurally complementary third connecting portion, and when the first bushing and the second bushing respectively After the first cavity is combined, the third connecting portions of the first bushing and the second bushing are engaged with each other. 如申請專利範圍第1項所述之襯套單元,進一步包含複數個襯套,其中該複數個襯套分別包含用於與該第一腔體連接之該第一連接部和用於與另一腔體連接之該第二連接部,該複數個襯套之該第一連接部及第二連接部兩者的横向邊長尺寸不同。The bushing unit of claim 1, further comprising a plurality of bushings, wherein the plurality of bushings respectively comprise the first connecting portion for connecting with the first cavity and for The second connecting portion of the cavity is different in the lateral length of the first connecting portion and the second connecting portion of the plurality of bushes. 如申請專利範圍第1項所述之襯套單元,其中當該襯套單元之該第二連接部與該第二腔體之該對接部對接後,該第二連接部與該第二腔體之間形成一容置空間,用於容置一氣密元件。The bushing unit of claim 1, wherein the second connecting portion and the second cavity are after the second connecting portion of the bushing unit is butted against the abutting portion of the second cavity An accommodating space is formed between the two to accommodate an airtight component. 如申請專利範圍第12項所述之襯套單元,其中該襯套單元之該第二連接部形成為一階梯狀,包含一第一階、一第二階和一第三階,當該襯套單元之該第二連接部與該第二腔體之該對接部對接後,該第二腔體之該 對接部與該第一階之一第一水平階梯面和該第三階之一第三水平階梯面連接,並且與該第二階共同形成容置該氣密元件的該容置空間。The bushing unit of claim 12, wherein the second connecting portion of the bushing unit is formed in a stepped shape, including a first step, a second step, and a third step, when the lining After the second connecting portion of the sleeve unit is mated with the abutting portion of the second cavity, the second cavity is The abutting portion is connected to the first horizontal step surface of the first step and the third horizontal step surface of the third step, and together with the second step forms the receiving space for accommodating the airtight member. 一種用於電漿反應裝置之襯套單元,該電漿反應裝置具有一第一腔體以及複數個第二腔體,該襯套單元包含:一第一連接部,用於與該第一腔體連接,並且該第一連接部與該第一腔體之一內側壁的結構互補;以及複數個第二連接部,用於分別與該複數個第二腔體之一對接部對接,其中該第一連接部及每一該第二連接部兩者的横向邊長尺寸不同。A bushing unit for a plasma reactor, the plasma reactor having a first cavity and a plurality of second cavities, the bushing unit comprising: a first connecting portion for the first cavity The body is connected to the body, and the first connecting portion is complementary to the structure of the inner side wall of the first cavity; and the plurality of second connecting portions are respectively for docking with one of the plurality of second cavity portions, wherein the The lateral lengths of the first connecting portion and each of the second connecting portions are different in size.
TW103223466U 2014-07-24 2014-12-31 Bush unit using for plasma reaction device TWM503056U (en)

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CN201520264626.3U CN204668276U (en) 2014-07-24 2015-04-28 Bushing unit for plasma reaction apparatus
JP2015002140U JP3198586U (en) 2014-07-24 2015-04-28 Bush unit for plasma reactor
CN201510442561.1A CN105304445B (en) 2014-07-24 2015-07-24 Bushing unit for plasma reaction apparatus
CN201710739775.4A CN107376800B (en) 2014-07-24 2015-07-24 Bushing unit for plasma reaction apparatus
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