TWM502953U - Image type positioning wafer thickness measurement device - Google Patents

Description

Image positioning wafer thickness measuring device

This creation is about wafer thickness measuring devices, especially an image positioning wafer thickness measuring device. The orientation of the image can be oriented in a software manner based on the input wafer image such that the measured wafer thickness is not affected by the height of the metal bumps such as solder balls or copper posts on the wafer surface on the wafer.

As shown in FIG. 1 to FIG. 6 , the conventional wafer thickness measuring device comprises: a semiconductor wafer 10 ′ on which a plurality of wafers 11 ′ arranged in an array are arranged, each of the wafers 11 ′ A transverse X-axis cut and a straight Y-axis cut are formed. The configuration of each of the wafers 11' on the wafer 10' is only a schematic view, not an actual form. In fact, the number of wafers on a semiconductor wafer is much larger than what is shown in the figure.

A suction cup 20' having a hollow structure, a plurality of suction holes 21' on the upper surface of the suction cup 20', and a plurality of suction holes 22' on the side of the suction cup 20'. And a plurality of through holes 23' are formed in the suction cup 20', each of the through holes 23' penetrating the upper surface and the lower surface of the suction cup 20', and the wall surface of each of the through holes 23' forms a closed structure without being inside the suction cup 20' Hollow parts connected through. In use, the wafer 10' is placed over the chuck 20' and overlying each of the adsorption holes 21' on the upper surface of the chuck 20'. Then, an air extractor (not shown) is connected to each of the air suction holes 22' and the gas inside the suction cup 20' is evacuated, so that the vacuum principle is applied to the wafer 10' to be closely attached to the suction cup 20'. Above.

A drive unit 30' is coupled to the suction cup 20' for moving the suction cup 20' along the X-axis in the lateral direction and the Y-axis in the longitudinal direction.

A thickness gauge 40' includes an upper wave range finder 41' located above the wafer 10' and a lower wave range finder 42' located below the suction cup 20'. The distance between the upper electric wave range finder 41' and the lower electric wave distance measuring unit 42' is kept at a fixed value and the two form a straight line such that the electric waves projected by the two are on the same straight line. When the wafer 10' is adsorbed on the chuck 20', the driving device 30' is first applied to adjust the position of the chuck 20' such that one of the suction cups 20' is aligned with the thickness gauge 40'. The upper electric wave range finder 41' and the lower electric wave distance measuring unit 42' are connected in a straight line (as shown in FIG. 3).

When the upper wave range finder 41' illuminates an electric wave above the wafer 10', its reflected wave will be received by the upper electric wave range finder 41', and the relationship between the applied transmitted wave and the reflected wave can be obtained by the laws of physics. Knowing the distance between the upper wave range finder 41' and the wafer 10'; similarly, when the lower wave range finder 42' illuminates the electric wave below the wafer 10', the reflected wave will be measured by the lower electric wave. Received by the device 42', applying a relationship between the transmitted wave and the reflected wave via The laws of physics can be used to know the distance between the lower wave range finder 42' and the underside of the wafer 10'. The thickness of the wafer 10' is obtained by subtracting the distance between the two measured wave-receiving waves by the distance between the original electric wave range finder 41' and the lower electric wave distance measuring device 42'.

The driving device 30' repeats the movement of the suction cup 20' in the X-axis direction or the Y-axis direction according to the position of each of the perforations 23' of the suction cup 20', and adjusts the position of the suction cup 20' so that the suction cup 20' is different. The through hole 23' is aligned with the line connecting the upper electric wave range finder 41' of the thickness measuring instrument 40' and the lower electric wave distance measuring device 42', and the wafer is measured at the position of the different perforations 23'. At a thickness of 10', a distribution of the thickness of the entire wafer 10' can be obtained.

In practical applications, as shown in FIGS. 5-6, since the X-axis scribe line and the Y-axis scribe line of the wafer 10' are not completely aligned with the X-axis and the Y-axis of the driving device 30', There is an angular difference between the wafer 10' and the driving device 30'. Since the driving device 30' shifts the chuck 20' in the X-axis direction or the Y-axis direction only according to the position of each of the through holes 23' of the chuck 20', it is impossible to know each wafer on the wafer 10'. 11's configuration, so the angle difference cannot be detected. When the driving device 30' moves the suction cup 20' in the X-axis direction or the Y-axis direction such that the next through hole 23' is aligned with the upper electric wave distance measuring device 41' of the thickness measuring instrument 40' and the lower electric wave distance measuring device At 42', it is possible that the projection point of the radio wave launcher 41' and the lower radio range finder 42' is offset from the wafer 11' originally on the wafer 10'. The corresponding X-axis scribe or Y-axis scribes the position so that the projection points fall on a certain wafer 11' of the wafer 10'. As shown in FIG. 6, since the portion of each of the wafers 11' protruding on the surface of the wafer 10' is mainly a solder ball (or a copper pillar) on the surface of the wafer 11', the projection point may fall on the surface of the wafer 11'. The ball (or copper post) is such that the measured distance is not the actual thickness of the wafer 10'. Therefore, it is necessary to compensate the angle difference by means of calculation, so that when the chuck 20' is moved, the projection point of the radio wave launcher 41' and the radio wave range finder 42' falls on the wafer. On the X-axis or Y-axis scribe line between each of the wafers 11' of 10', rather than on each of the wafers 11'.

Therefore, the present invention hopes to propose a new image-based positioning wafer thickness measuring device to solve the defects of the prior art.

Therefore, the purpose of the present invention is to solve the above-mentioned problems in the prior art. In this work, an image positioning wafer thickness measuring device is proposed, which is connected with a moving distance compensation device for measuring the thickness of a wafer. A driving device for the thickness measuring device for adjusting a position of the chuck of the thickness measuring device for fixing the wafer. The moving distance compensation device obtains a lateral X-axis scribe line and a straight Y-axis scribe line between the wafers on the wafer and the X-axis and the Y-axis of the driving device by inputting the image of the wafer and calculating the manner An angle difference, and the orientation of the image of the wafer is aligned by the angle difference, so that the moving distance compensation device compensates the X-axis deviation of the driving device due to the angular difference under the same X-axis displacement of the driving device Shift offset from the Y axis; or The same Y-axis displacement of the driving device compensates for the X-axis offset and the Y-axis offset of the driving device due to the angular difference. Therefore, the electric wave projection point of the radio range finder of the thickness measuring device can be projected on the wafer instead of a certain wafer, and the effective thickness of the wafer can be measured to solve the traditional wafer thickness. The measuring device cannot measure the correct thickness of the wafer due to the angular difference.

In order to achieve the above object, an image positioning wafer thickness measuring device is proposed in the present invention, comprising: a semiconductor wafer on which a plurality of wafers arranged in an array are arranged, and each of the wafers forms an intersecting lateral direction X. a shaft cutting channel and a straight Y-axis cutting channel; a suction cup having a hollow structure, the suction cup has a plurality of adsorption holes on the upper surface thereof, and a plurality of suction holes are formed on the side of the suction cup; and the suction cup is formed on the plurality of suction holes Perforating, each of the perforations penetrating the upper surface and the lower surface of the suction cup, and each of the perforated wall surfaces forms a closed structure without being in communication with a hollow portion inside the suction cup; in use, the wafer is placed above the suction cup and Covering each of the adsorption holes on the upper surface of the suction cup; then applying an air extractor to connect the respective air suction holes and evacuating the gas inside the suction cup, so that the vacuum principle is applied to closely attach the wafer to the suction cup a driving device is connected to the suction cup for moving the suction cup along a lateral X-axis and a longitudinal Y-axis; wherein the X-axis cutting path and the Y-axis cutting path of the wafer are not completely aligned with the driving device The X-axis and the Y-axis, so that the wafer has an angular difference from the driving device; a thickness measuring instrument applies the relationship between the transmitted wave and the reflected wave, and the physical law can be used to know the wafer. Thickness; the thickness gauge includes An upper electric wave distance measuring device located above the wafer and a lower electric wave distance measuring device located below the suction cup; maintaining a distance between the upper electric wave distance measuring device and the lower electric wave distance measuring device as a fixed value and forming a straight line The electric waves projected by the two are on the same straight line; when the wafer is adsorbed on the suction cup, the driving device is first applied to adjust the position of the suction cup so that one of the suction cups is aligned with the thickness measuring instrument a line connecting the power wave range finder and the lower electric wave distance measuring device; repeatedly applying the driving device to adjust the position of the suction cup, so that different perforations of the suction cup are aligned with the upper electric wave distance measuring device of the thickness measuring instrument and The straight line connected by the lower wave range finder and measuring the thickness of the wafer at different positions of the hole, the distribution of the thickness of the whole wafer can be obtained; a moving distance compensation device is connected to the driving device; Externally capturing the image of the wafer by the moving distance compensation device, inputting the size of the wafer on the wafer, the size of the X-axis cutting channel and the Y-axis cutting channel, and the direction of the X-axis cutting channel and the Y-axis cutting channel. So can Obtaining an overall arrangement of the wafer and the X-axis scribe line and the Y-axis dicing street on the wafer and an image of the direction in which the wafer is placed; and then moving the distance compensation device by aligning the orientation of the image of the wafer and Calculating the angle difference and compensating the angle difference when moving, so that the projection point of the radio wave range finder of the thickness gauge and the radio wave range of the lower radio range finder after moving The X-axis scribe line or the Y-axis scribe line between the wafer surfaces of the wafer surface, rather than on each of the wafers, allows the effective thickness of the wafer to be measured.

The features of the present invention and its advantages can be further understood from the description below, and please refer to the attached drawings when reading.

10‧‧‧ wafer

10'‧‧‧ wafer

11‧‧‧ wafer

11’‧‧‧ wafer

20‧‧‧Sucker

20’‧‧‧Sucker

21‧‧‧Adsorption holes

21’‧‧‧Adsorption holes

22‧‧‧Pumping holes

22’‧‧‧Pumping holes

23‧‧‧Perforation

23’‧‧‧Perforation

30‧‧‧ drive

30’‧‧‧ drive

40‧‧‧thickness measuring instrument

40'‧‧‧ thickness measuring instrument

41‧‧‧Upper wave range finder

41’‧‧‧Powering range finder

42‧‧‧Electric wave range finder

42'‧‧‧Electric wave range finder

50‧‧‧Moving distance compensation device

Fig. 1 is a view showing the structure of components of the prior art of the present invention.

Fig. 2 shows another schematic diagram of the component structure of the prior art in which the wafer is attached to the chuck.

3 is a side view showing the radio wave projection point of the two electric wave range finder on the wafer in the conventional technique of the present invention.

Figure 4 is a block diagram showing the connection of components of the prior art in the present invention, including the calculation process of the wafer thickness.

5 is a schematic plan view showing that the X-axis scribe line and the Y-axis scribe line of the prior art wafer of the present invention are not completely aligned with the X-axis and the Y-axis of the driving device.

Figure 6 shows a partial side view of Figure 5, wherein the prior art of the prior art is based on the solder balls of the two radio range finder that fall on the surface of the wafer.

Figure 7 shows a schematic diagram of the structure of the components of the present case.

Fig. 8 shows another schematic view of the component structure of the present invention, in which the wafer is attached to the chuck.

Figure 9 is a side view showing the radio wave projection point of the upper and lower radio range finder on the wafer on the wafer.

FIG. 10 shows a block diagram of the component connection of the present case, which includes a calculation process of the wafer thickness.

FIG. 11 is a partial side view of the wafer showing that the moving distance compensation device of the present invention can make the electric wave projection points of the upper and lower electric wave range finder correctly fall on the wafer. X-axis or Y-axis cutting.

In view of the structural composition of the case, and the functions and advantages that can be produced, in conjunction with the drawings, a preferred embodiment of the present invention is described in detail below.

Referring to FIG. 7 to FIG. 11 , the image-based positioning wafer thickness measuring device of the present invention comprises the following components: a semiconductor wafer 10 on which a plurality of wafers 11 arranged in an array are arranged. An intersecting lateral X-axis scribe line and a straight Y-axis dicing street are formed between the wafers 11. The configuration of each of the wafers 11 on the wafer 10 in the figure is only a schematic view, not an actual type. In fact, the number of wafers on a semiconductor wafer is much larger than what is shown in the figure.

A suction cup 20 having a hollow structure, the suction cup 20 has a plurality of adsorption holes 21 on its upper surface, and a plurality of suction holes 22 on the side of the suction cup 20. A plurality of perforations 23 are formed in the suction cup 20. Each of the perforations 23 penetrates the upper surface and the lower surface of the suction cup 20. The wall surface of each of the perforations 23 forms a closed structure without communicating with the hollow portion inside the suction cup 20. In use, the wafer 10 is placed above the chuck 20 and overlying each of the adsorption holes 21 on the upper surface of the chuck 20. Then, an air extractor (not shown) is connected to each of the suction holes 22 and the gas inside the suction cup 20 is evacuated, so that the wafer 10 is closely attached to the suction cup 20 by applying the vacuum principle.

A driving device 30 is connected to the suction cup 20 for use along the suction cup 20 The horizontal X axis and the longitudinal Y axis move.

A thickness gauge 40 includes an upper wave range finder 41 located above the wafer 10 and a lower wave range finder 42 located below the chuck 20. The distance between the upper electric wave range finder 41 and the lower electric wave distance measuring unit 42 is kept constant and the two form a straight line such that the electric waves projected by the two are on the same straight line. When the wafer 10 is adsorbed above the chuck 20, the driving device 30 is first applied to adjust the position of the chuck 20 such that one of the suction holes 20 is aligned with the upper wave range finder of the thickness measuring instrument 40. 41 and a straight line connecting the lower-wave range finder 42 (as shown in FIG. 9).

When the upper wave range finder 41 irradiates an electric wave above the wafer 10, the reflected wave thereof is received by the upper electric wave range finder 41, and the relationship between the transmitted electric wave and the reflected wave is applied to know the upper electric wave via the physical law. The distance between the range finder 41 and the wafer 10; similarly, when the lower wave range finder 42 illuminates the wave below the wafer 10, the reflected wave will be received by the lower wave range finder 42 and applied for emission. The relationship between the electric wave and the reflected wave The distance between the lower electric wave range finder 42 and the lower side of the wafer 10 can be known via the laws of physics. The thickness of the wafer 10 is obtained by subtracting the distance between the two measured wave-receiving waves by the distance between the upper electric wave range finder 41 and the lower electric wave distance measuring unit 42.

The driving device 30 repeats the movement of the suction cup 20 in the X-axis direction or the Y-axis direction according to the position of each of the perforations 23 of the suction cup 20, and adjusts the position of the suction cup 20 such that the different perforations 23 of the suction cup 20 are aligned with the thickness. Measure The line connecting the up-wave range finder 41 and the lower-wave range finder 42 of the meter 40 and measuring the thickness of the wafer 10 at different positions of the through-holes 23 can obtain the thickness of the entire wafer 10. distributed.

In practical applications, since the X-axis scribe line and the Y-axis scribe line of the wafer 10 are not completely aligned with the X-axis and the Y-axis of the driving device 30, there is a gap between the wafer 10 and the driving device 30. The angle is poor. Since the driving device 30 shifts the chuck 20 in the X-axis direction or the Y-axis direction only according to the position of each of the through holes 23 of the chuck 20, the arrangement of the wafers 11 on the wafer 10 cannot be known. Therefore, the angle difference cannot be detected. When the driving device 30 moves the chuck 20 in the X-axis direction or the Y-axis direction such that the next through hole 23 is aligned with the upper electric wave distance measuring device 41 and the lower electric wave distance measuring unit 42 of the thickness measuring instrument 40, it is possible The projection points of the radio wave emission of the upper electric wave range finder 41 and the lower electric wave distance measuring unit 42 are offset from the corresponding X-axis dicing or Y-axis dicing position between the wafers 11 on the wafer 10, so that The projection point falls on a certain wafer 11 of the wafer 10, so the measured distance is not the actual thickness of the wafer 10, so it is necessary to compensate the angular difference by calculation, so that when the chuck 20 is moved The projection point of the radio wave emission of the upper-wave range finder 41 and the lower-wave range finder 42 falls on the X-axis or Y-axis scribe line between the wafers 11 of the wafer 10 instead of On the wafer 11.

The present invention provides a moving distance compensation device 50 for connecting the driving device 30; externally capturing the image of the wafer 10 from the moving distance compensation device 50 and inputting the size of the wafer 11 on the wafer 10 and the size of the X-axis cutting channel and the Y-axis cutting channel, and the X-axis cutting channel and The direction of the Y-axis scribe line can thereby obtain an overall arrangement of the wafer 11 and the X-axis dicing streets and the Y-axis dicing streets on the wafer 10 and an image of the direction in which the wafer 10 is placed. Then, the moving distance compensation device 50 knows the angle difference through calculation, and corrects the orientation of the image of the wafer 10 according to the angle difference, and compensates the angle difference when moving, so that the thickness is measured after the movement. The projection points of the radio wave ranger 41 of the instrument 40 and the radio wave range finder 42 of the instrument 40 fall on the X-axis or Y-axis scribe line between the wafers 11 on the surface of the wafer 10 (eg Figure 11), rather than on each of the wafers 11, so that the effective thickness of the wafer 10 can be measured. The method is to compensate the X-axis offset and the Y-axis offset of the driving device 30 due to the angular difference under the same X-axis displacement of the driving device 30, so that the wafer 10 can pass the X-axis and the Y-axis. The offset compensation of the direction is to align the X-axis or Y-axis scribe line on the wafer 10 with the projection point of the radio wave emission of the upper electric wave range finder 41 and the lower electric wave range finder 42 so that the projection of the electric wave emission The dots may fall on the X-axis or Y-axis scribe lines on the wafer 10 instead of on a certain wafer 11; or under the same Y-axis displacement of the driving device 30, compensation may be caused by the angular difference. The X-axis offset of the driving device 30 is offset from the Y-axis, so that the wafer 10 can be etched by the X-axis or Y-axis on the wafer 10 via offset compensation in the X-axis and Y-axis directions. Aligning the projection points of the radio wave emission of the upper electric wave range finder 41 and the lower electric wave distance measuring unit 42, The projection point of the radio wave emission may fall on the X-axis scribe line or the Y-axis dicing street on the wafer 10 instead of on a certain wafer 11.

The advantage of the present invention is that a moving distance compensation device is connected to a driving device for measuring a thickness measuring device of a wafer thickness, and the driving device is used for adjusting the position of the suction cup of the thickness measuring device for fixing the wafer. . The moving distance compensation device obtains a lateral X-axis scribe line and a straight Y-axis scribe line between the wafers on the wafer and the X-axis and the Y-axis of the driving device by inputting the image of the wafer and calculating the manner An angle difference, and the orientation of the image of the wafer is aligned by the angle difference, so that the moving distance compensation device compensates the X-axis deviation of the driving device due to the angular difference under the same X-axis displacement of the driving device Shifting with the Y-axis offset; or compensating for the X-axis offset and Y-axis offset of the drive due to the angular difference under the same Y-axis displacement of the drive. Therefore, the electric wave projection point of the radio range finder of the thickness measuring device can be projected on the wafer instead of a certain wafer, and the effective thickness of the wafer can be measured to solve the traditional wafer thickness. The measuring device cannot measure the correct thickness of the wafer due to the angular difference.

In summary, the humanized design of this case is quite in line with actual needs. The specific improvement of the existing defects is obviously a breakthrough improvement advantage compared with the prior art, and it has an improvement in efficacy and is not easy to achieve. The case has not been disclosed or disclosed in domestic and foreign literature and market, and has complied with the provisions of the Patent Law.

The detailed description above is specific to one of the possible embodiments of this creation. It is to be understood that the examples are not intended to limit the scope of the patents of the present invention, and that equivalents or modifications may be included in the scope of the patent.

10‧‧‧ wafer

11‧‧‧ wafer

20‧‧‧Sucker

21‧‧‧Adsorption holes

22‧‧‧Pumping holes

23‧‧‧Perforation

30‧‧‧ drive

40‧‧‧thickness measuring instrument

41‧‧‧Upper wave range finder

42‧‧‧Electric wave range finder

50‧‧‧Moving distance compensation device

Claims (2)

An image positioning wafer thickness measuring device comprises: a semiconductor wafer on which a plurality of wafers arranged in an array are arranged, and each of the wafers forms an intersecting transverse X-axis cutting channel and a straight Y-axis a suction tray; the suction cup has a hollow structure, the upper surface of the suction cup has a plurality of adsorption holes, and a plurality of suction holes are formed on the side of the suction cup; and the suction cup has a plurality of perforations formed therein, and the perforations penetrate the suction cup The upper surface and the lower surface, and the wall surface of each of the perforations forms a closed structure without communicating with the hollow portion inside the suction cup; in use, the wafer is placed above the suction cup and covers the upper surface of the suction cup Above the adsorption hole; then using an air extractor to connect each of the suction holes and evacuate the gas inside the suction cup, so the vacuum principle is applied to attach the wafer tightly above the suction cup; a driving device is connected to the suction cup, Used to move the chuck along the X-axis in the lateral direction and the Y-axis in the longitudinal direction; wherein the X-axis and Y-axis of the wafer are not completely aligned with the X-axis and the Y-axis of the driving device, so the crystal Circle and There is an angular difference between the driving devices; a thickness measuring instrument uses the relationship between the transmitted wave and the reflected wave to know the thickness of the wafer through a physical law; the thickness measuring instrument is located above the wafer a power-on wave range finder and a lower-wave range finder located below the suction cup; maintaining a distance between the upper-wave range finder and the lower-wave range finder a fixed value and the two form a straight line such that the electric waves projected by the two are on the same line; when the wafer is adsorbed on the suction cup, the driving device is first applied to adjust the position of the suction cup so that one of the suction cups is perforated a line connecting the upper electric wave distance measuring device and the lower electric wave distance measuring device; the driving device repeats the suction cup in the X-axis direction or the Y-axis direction according to the position of each perforation of the suction cup Moving, adjusting the position of the suction cup so that different perforations of the suction cup are aligned with the line connecting the upper electric wave distance measuring device and the lower electric wave distance measuring device of the thickness measuring instrument, and the positions of different perforations are Measuring the thickness of the wafer, the distribution of the overall wafer thickness can be obtained; a moving distance compensation device is connected to the driving device; the moving distance compensation device externally captures the image of the wafer and inputs the wafer The size of the wafer and the size of the X-axis and Y-axis dicing streets, and the direction of the X-axis scribe and the Y-axis scribe, so that the wafer and the X-axis and Y-axis scribes on the wafer can be obtained. Whole An arrangement image and an image of a direction in which the wafer is placed; the movement distance compensation device then calculates the angle difference by calculation, and corrects the orientation of the image of the wafer according to the angle difference, and compensates the angle when moving Poor, such that the projection point of the radio wave range finder of the thickness gauge and the radio wave range of the lower radio range finder after moving is on the X-axis scribe line between the wafers on the surface of the wafer or The Y-axis is cut on the wafer, not on each of the wafers, so the effective wafer thickness can be measured. The image positioning wafer thickness measuring device according to claim 1, wherein the moving distance compensation device is via the same X in the driving device. Under the axial displacement, the X-axis offset and the Y-axis offset of the driving device caused by the angular difference are compensated, so that the wafer can be compensated by the offset of the X-axis and the Y-axis direction. The axis cutting channel or the Y-axis cutting channel aligns the projection point of the radio wave range finder and the radio wave ranger of the lower electric wave range finder, so that the projection point of the radio wave emission can fall on the X-axis cutting channel or the Y-axis on the wafer On the scribe line, not on a certain wafer; or in the same Y-axis displacement of the drive device, compensating for the X-axis offset and Y-axis offset of the drive due to the angular difference, thereby making the wafer The X-axis scribe line or the Y-axis scribe line on the wafer may be aligned with the projection point of the radio wave range finder and the radio wave range of the lower electric wave range finder by offset compensation in the X-axis and Y-axis directions, so that The projection point of the radio wave emission can fall on the X-axis or Y-axis scribe line on the wafer instead of on a certain wafer.