TWM491046U - Vacuum furnace body - Google Patents

Vacuum furnace body Download PDF

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Publication number
TWM491046U
TWM491046U TW103210016U TW103210016U TWM491046U TW M491046 U TWM491046 U TW M491046U TW 103210016 U TW103210016 U TW 103210016U TW 103210016 U TW103210016 U TW 103210016U TW M491046 U TWM491046 U TW M491046U
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TW
Taiwan
Prior art keywords
evaporation
wall
target
source
furnace body
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Application number
TW103210016U
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Chinese (zh)
Inventor
Shih-Yuan Sung
Original Assignee
Sung Yu Chi
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Publication date
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Publication of TWM491046U publication Critical patent/TWM491046U/en

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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50Substrate holders
    • C23C14/505Substrate holders for rotation of the substrates

Abstract

Disclosure is related to a vacuum furnace body. The vacuum furnace body includes the body of the furnace (11), evaporation source (A), hanging part (14) which is used to held the object to be plated (B), rotary table (C) which is used to held and move the hanging part (14); the confined space (S) formed by the soleplate (111), the ektexine (112), the wall (113) and the top plate of the body of the furnace (11); the body of the furnace (11) further includes a first baffle (17) and a second baffle (18); the first baffle (17) and the second baffle (18) are separated by a distance, and divide the confined space (S) into a first partitioned space (S1) and a second partitioned space (S2). This invention could preclude instantly generated oxygen substance and avoid the object to be plated (B) contaminated by oxygen substance. With this invention, the object to be plated (B) could be prevented from false attachment, and the stability of the product quality could be enhanced.

Description

真空爐體Vacuum furnace

本新型涉及一種真空爐體。The present invention relates to a vacuum furnace body.

現在世界各國採用圓型爐體設計。始終造成PVD(Physical Vapor Deposition,物理氣相沉積)鍍膜(塗層),有很多盲點。The world is now using round furnace design. Always cause PVD (Physical Vapor Deposition) coating (coating), there are many blind spots.

生產時產品常常出現假性附著,脫膜漏白。假性附著是一種看不到摸不到的技術難題,是PVD鍍膜(塗層)最頭痛的問題。嚴重的假性附著出爐後可以馬上發覺漏白。最怕的是輕微假性著,往往是產品到市場才發覺PVD鍍膜(塗層)漏白,影響商譽。During production, the product often appears to be falsely attached, and the film is leaking. Pseudo-adhesion is a technical problem that cannot be seen and is the most headache of PVD coating (coating). Severe false attachment can be detected immediately after the furnace is leaked. The most feared is the slight falseness. It is often the product that comes to the market that the PVD coating (coating) leaks white and affects goodwill.

參見圖1-3,現有世界各國採用圓型爐體設計的真空爐體1'包括真空室11',蒸發靶12',蒸發靶源13',物件掛架14',自轉架15'和公轉盤16'。Referring to Figures 1-3, the vacuum furnace body 1' of a circular furnace body design in the world includes a vacuum chamber 11', an evaporation target 12', an evaporation target 13', an object hanger 14', a self-rotating frame 15' and a public Turntable 16'.

蒸發靶12'分佈於真空室11'外表面。現有技術的結構使得整個真空室11'佈滿沉積的各種鈦灰塵,殘渣和氧化物質R。加溫過程中釋放出混雜氣體,很容易污染附著上被鍍物件表面,從而產生假性附著,使得色澤不正,殘渣容易掉在被鍍物件上面產生漏白現象,鍍膜凃層過程中溫度一直上升,需要停機等待降溫到需求溫度後,才可以繼績鍍膜凃層。參見圖2,蒸發靶源13'分佈於真空室11'內。可以看到,靶源與靶源之間無法互相 交叉蒸發。很容易造成死角無效區17',還很容易造成被鍍物件在凹角位置很難與正角位置同等膜厚,使得PVD鍍膜(塗層)膜厚不均勻。爐體越大,PVD鍍膜(塗層)膜厚越不均勻。凹角位置與正角位置PVD鍍膜(塗層)膜厚相差更大更嚴重。物件掛架14'上的被鍍產品無法實現自轉。PVD鍍膜(塗層)後產品膜厚無法均勻,如以4un膜厚.誤差值約0.5un-1un以上。The evaporation target 12' is distributed on the outer surface of the vacuum chamber 11'. The prior art structure causes the entire vacuum chamber 11' to be covered with various deposited titanium dust, residue and oxidizing species R. The mixed gas is released during the heating process, and it is easy to contaminate the surface of the object to be coated, thereby causing false adhesion, causing the color to be irregular, and the residue is likely to fall on the object to be plated to cause whitening, and the temperature during the coating process is always rising. It is necessary to stop the machine and wait for the temperature to cool down to the required temperature before the coating can be followed. Referring to Figure 2, the evaporation target 13' is distributed within the vacuum chamber 11'. It can be seen that the target source and the target source cannot mutually Cross evaporation. It is easy to cause the dead zone 17', and it is easy to cause the object to be plated to have the same film thickness at the concave corner position as the positive angle position, so that the film thickness of the PVD coating (coating) is not uniform. The larger the furnace body, the more uneven the PVD coating (coating) film thickness. The concave corner position is larger and more serious than the PVD coating (coating) film thickness at the positive angular position. The plated product on the object hanger 14' cannot be rotated. After PVD coating (coating), the film thickness of the product cannot be uniform, such as 4un film thickness. The error value is about 0.5un-1un.

本新型提出了一種真空爐體及用於該真空爐體的物理氣相沉積鍍膜(塗層)方法,解決上述技術問題。The present invention proposes a vacuum furnace body and a physical vapor deposition coating (coating) method for the vacuum furnace body to solve the above technical problems.

基於此,有必要提供一種真空爐體及用於該真空爐體的物理氣相沉積鍍膜方法,解決了假性附著的技術問題。Based on this, it is necessary to provide a vacuum furnace body and a physical vapor deposition coating method for the vacuum furnace body, which solves the technical problem of pseudo adhesion.

本新型提供了一種真空爐體,包括爐體本體,蒸發源,用於放置被鍍物件的物件掛架,用於放置物件掛架的並移動該物件掛架的轉盤;爐體本體包括底板、自底板彎折延伸的外壁、自底板彎折延伸的並與外壁相隔一定距離的內壁、連接外壁和內壁的頂板和由底板、外壁、內壁和頂板共同圍形成密閉空間;所述爐體本體還包括置於密閉空間內分別與底板、外壁、內壁和頂板相連的第一擋板和第二擋板;所述第一擋板和第二擋板相隔一定的距離並將所述密閉空間分隔成第一分隔空間和第二分隔空間;所述第一擋板、第二擋板與所述外壁或內壁活動連接;蒸發源設置於第一分隔空間,物件掛架和轉盤設置於第二分隔空間;在第一擋板和第二擋板打開時,轉盤將物件掛架從第二分隔 空間移動至第一分隔空間內。The invention provides a vacuum furnace body, comprising a furnace body body, an evaporation source, an object hanger for placing the object to be plated, a turntable for placing the object hanger and moving the object hanger; the furnace body comprises a bottom plate, An outer wall extending from the bottom plate, an inner wall bent from the bottom plate and spaced apart from the outer wall, a top plate connecting the outer wall and the inner wall, and a closed space formed by the bottom plate, the outer wall, the inner wall and the top plate; the furnace The body body further includes a first baffle and a second baffle disposed in the confined space respectively connected to the bottom plate, the outer wall, the inner wall and the top plate; the first baffle and the second baffle are separated by a certain distance and the The sealed space is partitioned into a first partition space and a second partition space; the first baffle and the second baffle are movably connected to the outer wall or the inner wall; the evaporation source is disposed in the first partition space, the object hanger and the turntable are disposed In the second partition space; when the first baffle and the second baffle are opened, the turntable separates the object hanger from the second The space moves into the first compartment.

優選的,蒸發源包括第一蒸發源和第二蒸發源,外壁包括位於第一分隔空間的第一外壁和位於第二分隔空間的與第一外壁相連的第二外壁,內壁包括位於第一分隔空間的第一內壁和位於第二分隔空間與第一內壁相連的第二內壁;第一蒸發源和第二蒸發源分別設在第一外壁和第一內壁,且第一蒸發源和第二蒸發源相對設置。Preferably, the evaporation source comprises a first evaporation source and a second evaporation source, the outer wall comprises a first outer wall located in the first separation space and a second outer wall connected to the first outer wall in the second separation space, the inner wall comprising the first outer wall a first inner wall of the partition space and a second inner wall connected to the first inner wall of the second partition space; the first evaporation source and the second evaporation source are respectively disposed on the first outer wall and the first inner wall, and the first evaporation The source and the second evaporation source are disposed opposite each other.

優選的,蒸發源包括蒸發靶和為蒸發靶提供動力的蒸發靶源。Preferably, the evaporation source comprises an evaporation target and an evaporation target source that powers the evaporation target.

優選的,爐體本體的外壁至少兩個門。Preferably, the outer wall of the body of the furnace has at least two doors.

優選的,蒸發靶源包括電弧靶源或平面靶源.中頻園柱靶源及直流靶源中的任一種或其任意組合。Preferably, the evaporation target source comprises any one of an arc target source or a planar target source, an intermediate frequency cylindrical target source, and a direct current target source, or any combination thereof.

本新型還提供了一種真空爐體,該真空爐體包括密閉的真空室,該真空室通過擋板分隔成獨立的物件區和靶蒸發區;物件區,用於放置被鍍物件;靶蒸發區,用於給被鍍物件物理氣相沉積鍍膜;該真空爐體還包括控制部件,用於打開擋板,將分隔的物件區與靶蒸發區相通;傳送部件,用於將被鍍物件從物件區移動至靶蒸發區。The present invention also provides a vacuum furnace body comprising a sealed vacuum chamber partitioned into a separate object area and a target evaporation area by a baffle; an object area for placing the object to be plated; and a target evaporation area And a physical vapor deposition coating for the object to be plated; the vacuum furnace body further comprising a control component for opening the baffle to communicate the separated object region with the target evaporation zone; and a conveying component for moving the object to be plated from the object The zone moves to the target evaporation zone.

優選的,靶蒸發區相對設置有第一蒸發源和第二蒸發源。Preferably, the target evaporation zone is oppositely disposed with a first evaporation source and a second evaporation source.

優選的,第一蒸發源和第二蒸發源分別包括蒸發靶和為蒸發 靶提供動力的蒸發靶源;擋板包括第一擋板和第二擋板。Preferably, the first evaporation source and the second evaporation source respectively comprise an evaporation target and are evaporated a target powered evaporative target; the baffle includes a first baffle and a second baffle.

採用本新型提供的真空爐體,將蒸發源與被鍍物件分別放置在兩個獨立分隔的區域,可以杜絕瞬間產生的氧物質,避免氧物質污染到被鍍物件表面上,從而避免被鍍物件產生假性附著,提高產品品質的穩定性。By adopting the vacuum furnace body provided by the present invention, the evaporation source and the object to be plated are respectively placed in two separate regions, which can eliminate the oxygen substances generated in an instant and prevent the oxygen substances from being contaminated on the surface of the object to be plated, thereby avoiding the object to be plated. Produces false adhesion and improves the stability of product quality.

本新型將蒸發源與被鍍物件分別放置在兩個獨立分隔的區域,生產過程中.各種殘渣,鈦灰塵,氧化物,只殘留在單獨分隔真空室蒸發區裡面,很容易完全清除乾淨。物理氣相沉積鍍膜膜厚均勻。沒有無效蒸發區域。The new type of evaporation source and the object to be plated are placed in two separate areas. During the production process, various residues, titanium dust and oxides remain in the separate evaporation chamber of the vacuum chamber, and are easily removed completely. The physical vapor deposition coating film has a uniform thickness. There is no invalid evaporation area.

由於採用了兩組蒸發源,使得內外側靶源互相交差蒸發,物理氣相沉積鍍膜膜厚很均勻。凹角位子與正角位子物理氣相沉積鍍膜膜厚均勻。Since two sets of evaporation sources are used, the inner and outer target sources are mutually evaporated, and the physical vapor deposition coating film has a uniform thickness. The thickness of the concave-angle seat and the positive-angle seat physical vapor deposition coating film is uniform.

10‧‧‧真空爐體10‧‧‧Vacuum body

10”‧‧‧另一實施例的真空爐體10"‧‧‧Vacuum furnace body of another embodiment

11‧‧‧爐體本體11‧‧‧ furnace body

111‧‧‧底板111‧‧‧floor

112‧‧‧外壁112‧‧‧ outer wall

113‧‧‧內壁113‧‧‧ inner wall

11a‧‧‧第二分隔空間之三個門之一11a‧‧‧One of the three doors of the second compartment

11b‧‧‧第二分隔空間之三個門之二11b‧‧‧Two of the three doors of the second compartment

11c‧‧‧第二分隔空間之三個門之二11c‧‧‧Two of the three doors of the second compartment

11d‧‧‧第一分隔空間之門11d‧‧‧The door to the first compartment

12‧‧‧蒸發靶12‧‧‧ evaporation target

12’‧‧‧現有技術真空爐體的蒸發靶12’‧‧‧Evaporation target for existing vacuum furnaces

13‧‧‧蒸發靶源13‧‧‧ evaporation target

13’‧‧‧現有技術真空爐體的蒸發靶源13’‧‧‧Evaporation target for existing vacuum furnaces

14‧‧‧物件掛件14‧‧‧ Object pendant

14’‧‧‧現有技術真空爐體的物件掛件14’‧‧‧Items for existing vacuum furnaces

15’‧‧‧現有技術真空爐體的自轉架15'‧‧‧Automatic vacuum furnace body

15”‧‧‧另一實施例的自傳公盤15"‧‧‧An autobiographical public form of another embodiment

16‧‧‧公轉盤16‧‧‧public turntable

16’‧‧‧現有技術真空爐體的公轉盤16’‧‧‧The main turntable of the existing vacuum furnace body

16”‧‧‧另一實施例的公轉盤16"‧‧‧ Another embodiment of the male turntable

17‧‧‧第一擋板17‧‧‧First baffle

17’‧‧‧現有技術真空爐體的死角無效區17’‧‧‧Invalid dead zone of prior art vacuum furnace

17”‧‧‧另一實施例的第一擋板17"‧‧‧First baffle of another embodiment

18‧‧‧第二擋板18‧‧‧second baffle

18”‧‧‧另一實施例的第二擋板18"‧‧‧ second baffle of another embodiment

19‧‧‧另一實施例的內部結構示意圖19‧‧‧ Schematic diagram of the internal structure of another embodiment

A‧‧‧蒸發源A‧‧‧ evaporation source

A1‧‧‧第一蒸發源A1‧‧‧First evaporation source

A2‧‧‧第二蒸發源A2‧‧‧second evaporation source

A”‧‧‧另一實施例的蒸發源A"‧‧‧An evaporation source of another embodiment

A1”‧‧‧另一實施例的第一蒸發源A1"‧‧‧ The first evaporation source of another embodiment

A2”‧‧‧另一實施例的第二蒸發源A2"‧‧‧Second evaporation source of another embodiment

B‧‧‧被鍍物件B‧‧‧Platted objects

C‧‧‧轉盤C‧‧‧ turntable

C”‧‧‧另一實施例的轉盤C"‧‧‧ Turntable of another embodiment

D”‧‧‧另一實施例的擋板D"‧‧‧ another embodiment of the baffle

L‧‧‧離子L‧‧‧ ions

R‧‧‧氧化物質R‧‧‧Oxidizing substances

S‧‧‧密閉空間S‧‧‧Confined space

S1‧‧‧第一分隔空間S1‧‧‧ first compartment

S2‧‧‧第二分隔空間S2‧‧‧Second separation space

S1”‧‧‧另一實施例的靶蒸發區S1"‧‧‧ target evaporation zone of another embodiment

S2”‧‧‧另一實施例的物件區S2"‧‧‧An object area of another embodiment

第1圖係本新型提供的現有技術真空爐體的示意圖。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a schematic illustration of a prior art vacuum furnace body provided by the present invention.

第2圖係第1圖的內部結構圖。Fig. 2 is an internal structural diagram of Fig. 1.

第3圖係第1圖的俯視圖。Fig. 3 is a plan view of Fig. 1.

第4圖係本新型提供的一個實施例的整體結構示意圖。Figure 4 is a schematic view showing the overall structure of an embodiment provided by the present invention.

第5圖係本新型提供的一個實施例的內部結構示意圖。Fig. 5 is a schematic view showing the internal structure of an embodiment provided by the present invention.

第6圖係本新型提供的PVD鍍膜時工作示意圖。Figure 6 is a schematic view of the operation of the PVD coating provided by the present invention.

第7圖係本新型提供的一個實施例的內部結構示意圖(電弧靶源或平面靶源,中頻圓柱靶源及直流靶源)。Figure 7 is a schematic diagram of the internal structure of an embodiment provided by the present invention (arc target or planar target source, intermediate frequency cylindrical target source and direct current target source).

第8圖係本新型提供的一個實施例的內部結構示意圖(電弧靶源或平面靶源,中頻圓柱靶源及直流靶源)。Figure 8 is a schematic diagram of the internal structure of an embodiment provided by the present invention (arc target or planar target source, intermediate frequency cylindrical target source and direct current target source).

第9圖係本新型提供的一個實施例的內部結構示意圖(電弧靶源或平面靶源,中頻圓柱靶源及直流靶源)。Figure 9 is a schematic diagram of the internal structure of an embodiment provided by the present invention (arc target or planar target source, intermediate frequency cylindrical target source and direct current target source).

下面結合具體的實施例及附圖對的技術方案進行詳細的描述,以使其更加清楚。以下實施例僅為了描述本新型所列舉的較為詳細的實施例,並不作為對本新型所的限定。The technical solutions of the specific embodiments and the accompanying drawings are described in detail below to make them clearer. The following examples are merely illustrative of the more detailed embodiments of the present invention and are not intended to limit the invention.

實施例一Embodiment 1

參見圖4-7和圖9,本新型提供的真空爐體10,包括爐體本體11,蒸發源A,用於放置被鍍物件B的物件掛架14,用於放置物件掛架14的並移動該物件掛架14的轉盤C。Referring to Figures 4-7 and 9, the vacuum furnace body 10 of the present invention includes a furnace body 11, an evaporation source A, and an object hanger 14 for placing the object B to be placed for the object hanger 14 and The turntable C of the object hanger 14 is moved.

爐體本體11包括底板111、自底板111彎折延伸的外壁112、自底板111彎折延伸的並與外壁112相隔一定距離的內壁113、連接外壁112和內壁113的頂板(未標示)和由底板111、外壁112、內壁113和頂板共同圍形成密閉空間(真空室)S。The furnace body 11 includes a bottom plate 111, an outer wall 112 bent from the bottom plate 111, an inner wall 113 bent from the bottom plate 111 and spaced apart from the outer wall 112, and a top plate (not labeled) connecting the outer wall 112 and the inner wall 113. A sealed space (vacuum chamber) S is formed by the bottom plate 111, the outer wall 112, the inner wall 113, and the top plate.

所述爐體本體11還包括置於分隔空間S內分別與底板111、外壁112、內壁113和頂板相連的第一擋板17和第二擋板18;所述第一擋板17和第二擋板18相隔一定的距離並將所述分隔空間S分隔成第一分隔空間S1和第二分隔空間S2;所述第一擋板17、第二擋板18與所述外壁112或內壁113活動連接。The furnace body 11 further includes a first baffle 17 and a second baffle 18 disposed in the partition space S respectively connected to the bottom plate 111, the outer wall 112, the inner wall 113 and the top plate; the first baffle 17 and the first baffle The two baffles 18 are separated by a certain distance and divide the separation space S into a first separation space S1 and a second separation space S2; the first baffle 17, the second baffle 18 and the outer wall 112 or the inner wall 113 active connections.

蒸發源A設置於第一分隔空間S1,物件掛架14和轉盤C設置 於第二分隔空間S2。The evaporation source A is disposed in the first separation space S1, and the object hanger 14 and the turntable C are disposed. In the second separation space S2.

在第一擋板17打開時,轉盤C將物件掛架14從第二分隔空間S2移動至第一分隔空間S1內。蒸发源A包括第一蒸发源A1和第二蒸发源A2。当然也可以只有一个蒸发源。When the first flap 17 is opened, the turntable C moves the article hanger 14 from the second partition space S2 into the first partition space S1. The evaporation source A includes a first evaporation source A1 and a second evaporation source A2. Of course, there can be only one evaporation source.

外壁112包括位於第一分隔空間S1的第一外壁和位於第二分隔空間S2的第二外壁,內壁113包括位於第一分隔空間S1的第一內壁和位於第二分隔空間S2第二內壁。第一外壁和第二外壁相連,第一內壁和第二內壁相連。也就是說,第一外壁、第一內壁、底板和頂板構成了第一分隔空間S1;第二外壁、第二內壁、底板和頂板構成了第二分隔空間。The outer wall 112 includes a first outer wall located in the first partition space S1 and a second outer wall located in the second partition space S2. The inner wall 113 includes a first inner wall located in the first partition space S1 and a second inner space in the second partition space S2 wall. The first outer wall is connected to the second outer wall, and the first inner wall is connected to the second inner wall. That is, the first outer wall, the first inner wall, the bottom plate, and the top plate constitute the first partition space S1; the second outer wall, the second inner wall, the bottom plate, and the top plate constitute the second partition space.

第一蒸發源A1和第二蒸發源A2分別設在第一外壁和第一內壁,且第一蒸發源A1和第二蒸發源A2相對設置。The first evaporation source A1 and the second evaporation source A2 are respectively disposed on the first outer wall and the first inner wall, and the first evaporation source A1 and the second evaporation source A2 are disposed opposite to each other.

設置兩個蒸發源,能更好的提高PVD鍍膜(塗層)的效率。參見圖6,可以看到,兩個蒸發源,會互相交叉蒸發離子L,提高效率。Setting two evaporation sources can improve the efficiency of PVD coating (coating). Referring to Figure 6, it can be seen that the two evaporation sources will cross each other to evaporate ions L, improving efficiency.

蒸發源A包括蒸發靶12和為蒸發靶12提供動力的蒸發靶源13。The evaporation source A includes an evaporation target 12 and an evaporation target source 13 that powers the evaporation target 12.

本新型中,蒸發源A設置第一分隔空間,使得生產過程中,殘留各種殘渣、鈦灰塵、氧化物等殘物,很容易完全清乾淨。In the present invention, the evaporation source A is provided with a first separation space, so that residual residues, titanium dust, oxides and the like remain in the production process, and it is easy to completely clean.

蒸發源A設置在第一分隔空間,採用公轉橫插掛方式,鍍出PVD鍍層(塗層)物件,物理氣相沉積鍍膜(塗層)膜厚均勻,蒸發靶源設置在第一分隔空間。The evaporation source A is disposed in the first separation space, and the PVD coating (coating) object is plated by the male-floating horizontal insertion method, the physical vapor deposition coating (coating) film thickness is uniform, and the evaporation target source is disposed in the first separation space.

蒸發源A設置在第一分隔空間,PVD鍍膜(塗層)時溫度不會一直上升,可以控制在100-500攝氏度。不用停機等待降溫,可以繼績鍍膜 塗層。第二分隔空間可以裝製溫,冷卻控制糸統。The evaporation source A is disposed in the first separation space, and the temperature does not rise continuously during the PVD coating (coating), and can be controlled at 100-500 degrees Celsius. No need to stop waiting for cooling, you can continue coating coating. The second compartment can be installed with temperature and cooling control system.

蒸發源A設置在第一分隔空間,定期清理,清理時間約2小時以下就可從新開機工作。The evaporation source A is set in the first separation space, and is regularly cleaned, and the cleaning time is about 2 hours or less to start the new startup.

蒸發源A設置在第一分隔空間,可以無限放大真空室,沒有無效蒸發區域。兩組蒸發源源互相交叉蒸發,PVD鍍膜(塗層)膜厚很均勻,凹角位子與正角位子PVD鍍膜相當均勻,PVD鍍膜(塗層)膜厚4un誤差值約0.02un以下。The evaporation source A is disposed in the first separation space, and the vacuum chamber can be infinitely enlarged without an invalid evaporation region. The evaporation source of the two groups cross-evaporated, the PVD coating (coating) film thickness is very uniform, the concave corner position and the positive angle position PVD coating are quite uniform, and the PVD coating (coating) film thickness 4un error value is about 0.02un or less.

爐體本體11的外壁設有至少兩個門,本新型提高的實施例中,參見圖4,在第一分隔空間設置了1個門11d,第二分隔空間3個門,分別為11a,11b,11c。這樣方便清理、打掃。The outer wall of the furnace body 11 is provided with at least two doors. In the improved embodiment of the present invention, referring to FIG. 4, one door 11d is disposed in the first partition space, and the third partition space is three doors, respectively 11a, 11b. , 11c. This is convenient for cleaning and cleaning.

轉盤C包括自轉盤15和公轉盤16,被鍍物件放置在物件掛架14上,物件掛架14設置在自轉盤15上,自轉盤15與公轉盤16轉動連接。通過公轉盤16的轉動將被鍍物件從物件區S2移入靶蒸發區S1。The turntable C includes a self-rotating turntable 15 and a male turntable 16, and the object to be plated is placed on the object hanger 14, and the object hanger 14 is disposed on the self-rotating plate 15 and is rotatably connected to the male turntable 16 from the turntable 15. The object to be plated is moved from the object area S2 into the target evaporation zone S1 by the rotation of the male turntable 16.

蒸發靶源13可以是電弧靶源或平面靶源,中頻園柱靶源及直流靶源中的任一種或其任意組合。The evaporation target source 13 can be any one of an arc target source or a planar target source, an intermediate frequency cylindrical target source, and a direct current target source, or any combination thereof.

由於本新型將真空爐體通過第一擋板和第二擋板分隔成兩個空間一一第一分隔空間和第二分隔空間,可以事先調整好第一分隔空間中PVD鍍膜(塗層)各參數的條件,待滿足PVD鍍膜各參數條件後,再將被鍍物件從第二分隔空間移動入第一分隔空間。這樣,可以杜絕瞬間產生的氧物質,避免氧物質污染到被鍍物件表面上,從而避免被鍍物件產生假性附著,提高產品品質的穩定性。Since the vacuum furnace body divides the vacuum furnace body into two spaces, a first partition space and a second partition space through the first baffle and the second baffle, the PVD coating (coating) in the first partition space can be adjusted in advance. The condition of the parameter, after the conditions of each parameter of the PVD coating are satisfied, the object to be plated is moved from the second separation space into the first separation space. In this way, the oxygen species generated in an instant can be eliminated, and the oxygen species can be prevented from being contaminated on the surface of the object to be plated, thereby avoiding false adhesion of the object to be plated and improving the stability of the product quality.

實施例二Embodiment 2

在另外一個實施例中,參見圖8,本新型提供的另一種真空爐體10",該真空爐體包括分隔的真空室,該真空室通過擋板D"分隔成獨立的物件區S2"和靶蒸發區S1"。物件区S2",用于放置被镀物件B。In another embodiment, referring to Fig. 8, another vacuum furnace body 10" is provided by the present invention, the vacuum furnace body comprising a separate vacuum chamber, which is separated into a separate object area S2" by a baffle D" and Target evaporation zone S1". The object area S2" is for placing the object B to be plated.

靶蒸發區S1",用於給被鍍物件物理氣相沉積鍍膜(塗層)。The target evaporation zone S1" is used for physical vapor deposition coating (coating) of the object to be plated.

該真空爐體還包括控制部件(未圖示),用於打開擋板D",將物件區S2"與靶蒸發區S1"連通。The vacuum furnace body further includes a control member (not shown) for opening the baffle D" to communicate the object region S2" with the target evaporation region S1.

傳送部件C",用於將物件區S2"的被鍍物件移動至靶蒸發區S1"。The conveying member C" is for moving the object to be plated of the object region S2" to the target evaporation region S1".

靶蒸發區S1"相對設置有第一蒸發源A1"和第二蒸發源A2"。The target evaporation zone S1" is oppositely disposed with a first evaporation source A1" and a second evaporation source A2".

當然,一個蒸發源也是可以的,但是兩個蒸發源可以提高效率,速度快,PVD鍍膜(塗層)比較均勻,PVD鍍膜(塗層)的效果更好。Of course, an evaporation source is also possible, but the two evaporation sources can improve efficiency, speed, PVD coating (coating) is relatively uniform, PVD coating (coating) is better.

第一蒸發源A1"和第二蒸發源A2"分別包括蒸發靶和為蒸發靶提供動力的蒸發靶源;擋板D"包括第一擋板17"和第二擋板18"。當然擋板D"也可以只有一個,只要能夠將物件區S2"和靶蒸發區S1"隔離就可以。The first evaporation source A1" and the second evaporation source A2" respectively include an evaporation target and an evaporation target source that powers the evaporation target; the shutter D" includes a first shutter 17" and a second shutter 18". There may be only one D" as long as it can isolate the object area S2" from the target evaporation area S1.

本新型中,蒸發源A"設置靶蒸發區,使得生產過程中,殘留各種殘渣、鈦灰塵、氧化物等殘物,很容易完全清乾淨。In the novel, the evaporation source A" sets the target evaporation zone, so that residual residues, titanium dust, oxides and the like remain in the production process, and it is easy to completely clean.

蒸發源A"設置靶蒸發區,採用公轉橫插掛方式,鍍出PVD鍍膜(塗層)物件,物理氣相沉積鍍膜(塗層)膜厚均勻。The evaporation source A" sets the target evaporation zone, and adopts the revolutionary horizontal insertion method to plate the PVD coating (coating) object, and the physical vapor deposition coating (coating) has a uniform film thickness.

蒸發源A"設置靶蒸發區,PVD鍍膜(塗層)時溫度不會一直上升,可以控制在100-500攝氏度。不用停機等待降溫,可以繼績物理氣相沉積鍍膜(塗層)。物件區可以裝製溫,冷卻控制糸統。Evaporation source A" sets the target evaporation zone, the temperature of the PVD coating (coating) does not rise all the time, can be controlled at 100-500 degrees Celsius. Without stopping the machine to wait for cooling, it can be a physical vapor deposition coating (coating). It can be installed with temperature and cooling control system.

蒸發源A"設置靶蒸發區,定期清理,清理時間約2小時以下 就可從新開機工作。Evaporation source A" sets the target evaporation zone, cleans regularly, and the cleaning time is less than 2 hours. You can start working from a new boot.

蒸發源A"設置靶蒸發區,可以無限放大真空室,沒有無效蒸發區域。兩組蒸發源源互相交叉蒸發,物理氣相沉積鍍膜膜厚很均勻,凹角位子與正角位子物理氣相沉積鍍膜(塗層)相當均勻,物理氣相沉積鍍膜(塗層)膜厚4un誤差值約0.02un以下。Evaporation source A" sets the target evaporation zone, which can infinitely enlarge the vacuum chamber without invalid evaporation zone. The two evaporation sources cross-evaporate each other, the physical vapor deposition coating film thickness is very uniform, the concave corner position and the positive-angle position physical vapor deposition coating ( The coating) is quite uniform, and the physical vapor deposition coating (coating) film thickness 4un error value is about 0.02un or less.

由於本新型將真空爐體通過擋板分隔成兩個空間一一靶蒸發區和物件區,可以事先調整好靶蒸發區中PVD鍍膜各參數的條件,待滿足PVD鍍膜(塗層)各參數條件後,再將被鍍物件從物件區移動入靶蒸發區。這樣,可以杜絕瞬間產生的氧物質,避免氧物質污染到被鍍物件表面上,從而避免被鍍物件產生假性附著,提高產品品質的穩定性。Since the vacuum furnace body is divided into two spaces, a target evaporation zone and an object zone, the conditions of the PVD coating parameters in the target evaporation zone can be adjusted in advance, and the parameters of the PVD coating (coating) are to be satisfied. Thereafter, the object to be plated is moved from the object area into the target evaporation zone. In this way, the oxygen species generated in an instant can be eliminated, and the oxygen species can be prevented from being contaminated on the surface of the object to be plated, thereby avoiding false adhesion of the object to be plated and improving the stability of the product quality.

在真空爐體內,對被鍍物件進行PVD鍍膜(塗層)的過程為:將被鍍物件B放於真空爐體的物件區S2";設置靶蒸發區S1"中蒸發源A"的參數,並使蒸發源A"開始工作;當參數達到物理氣相沉積鍍膜(塗層)的要求時,打開擋板D",將被鍍物件從物件區S2"移入靶蒸發區S1"進行物理氣相沉積鍍膜(塗層)。In the vacuum furnace body, the PVD coating (coating) of the object to be plated is: placing the object B to be placed in the object area S2 of the vacuum furnace body; setting the parameters of the evaporation source A" in the target evaporation zone S1", And the evaporation source A" starts to work; when the parameter reaches the requirement of the physical vapor deposition coating (coating), the baffle D" is opened, and the object to be plated is moved from the object region S2 to the target evaporation region S1 for physical vapor phase. Deposit coating (coating).

傳送部件C"包括自轉盤15"和公轉盤16",被鍍物件放置在物件掛架14"上,物件掛架14"設置在自轉盤15"上,自轉盤15"與公轉盤16"轉動連接。通過公轉盤16"的轉動將被鍍物件從物件區S2"移入靶蒸發區S1"。The conveying member C" includes a self-rotating wheel 15" and a male turntable 16", the object to be plated is placed on the object hanger 14", and the object hanger 14" is disposed on the self-rotating plate 15", and rotates from the turntable 15" and the male turntable 16" connection. The object to be plated is moved from the object area S2 to the target evaporation zone S1 by the rotation of the male turntable 16".

蒸發靶源可以是電弧靶源或平面靶源.中頻園柱靶源及直流靶源。The evaporation target source may be an arc target source or a planar target source, an intermediate frequency cylindrical target source, and a direct current target source.

由於將真空爐體分隔為兩個空間,可以事先調整好蒸發靶源的電流以及氣體各參數條件,待穩定後開始PVD鍍膜(塗層),使得在啟動蒸發靶源(包括電弧靶源或平面靶源.中頻園柱靶源及直流靶源)時可以杜絕瞬間產生的氧物質,避免氧物質污染到被鍍物件表面上,從而避免被鍍物件產生假性附著,提高產品品質的穩定性。Since the vacuum furnace body is divided into two spaces, the current of the evaporation target source and the parameters of the gas parameters can be adjusted in advance, and the PVD coating (coating) is started after stabilization, so that the evaporation target source (including the arc target source or plane) is activated. When the target source, the intermediate frequency cylinder target source and the DC target source) can eliminate the oxygen substances generated instantaneously, the oxygen substance is prevented from being contaminated on the surface of the object to be plated, thereby avoiding false adhesion of the object to be plated and improving the stability of the product quality. .

本實施例中,在靶蒸發區設置了1個門、物件區設置了3個門。這樣方便清理、打掃。In this embodiment, three doors are provided in the target evaporation zone, and three doors are provided in the object area. This is convenient for cleaning and cleaning.

以上所述實施例僅表達了本實用新型的幾種實施方式,其描述較為具體和詳細,但並不能因此而理解為對本實用新型專利範圍的限制。應當指出的是,對於本領域的普通技術人員來說,在不脫離本實用新型構思的前提下,還可以做出若干變形和改進,這些都屬於本實用新型的保護範圍。因此,本實用新型專利的保護範圍應以所附權利要求為準。The above-mentioned embodiments are merely illustrative of several embodiments of the present invention, and the description thereof is more specific and detailed, but is not to be construed as limiting the scope of the invention. It should be noted that a number of variations and modifications may be made by those skilled in the art without departing from the spirit and scope of the invention. Therefore, the scope of the invention should be determined by the appended claims.

10‧‧‧真空爐體10‧‧‧Vacuum body

11a‧‧‧第二分隔空間之三個門之一11a‧‧‧One of the three doors of the second compartment

11b‧‧‧第二分隔空間之三個門之二11b‧‧‧Two of the three doors of the second compartment

11c‧‧‧第二分隔空間之三個門之二11c‧‧‧Two of the three doors of the second compartment

11d‧‧‧第一分隔空間之門11d‧‧‧The door to the first compartment

12‧‧‧蒸發靶12‧‧‧ evaporation target

Claims (8)

一種真空爐體,包括:爐體本體(11),蒸發源(A),用於放置被鍍物件(B)的物件掛架(14),用於放置物件掛架(14)的並移動該物件掛架(14)的轉盤(C);其特徵在於,爐體本體(11)包括底板(111)、自底板(111)彎折延伸的外壁(112)、自底板(111)彎折延伸的並與外壁(112)相隔一定距離的內壁(113)、連接外壁和內壁的頂板和由底板(111)、外壁(112)、內壁(113)和頂板共同圍形成密閉空間(S);所述爐體本體(11)還包括置於密閉空間(S)內分別與底板(111)、外壁(112)、內壁(113)和頂板相連的第一擋板(17)和第二擋板(18);所述第一擋板(17)和第二擋板(18)相隔一定的距離並將所述密閉空間分隔成第一分隔空間(S1)和第二分隔空間(S2);所述第一擋板(17)、第二擋板(18)與所述外壁(112)或內壁(113)活動連接;蒸發源(A)設置於第一分隔空間(S1),物件掛架(14)和轉盤(C)設置於第二分隔空間(S2);在第一擋板(17)和第二擋板(18)打開時,轉盤(C)將物件掛架(14)從第二分隔空間(S2)移動至第一分隔空間(S1)內。 A vacuum furnace body comprising: a furnace body (11), an evaporation source (A), an object hanger (14) for placing the object to be plated (B), for placing and moving the object hanger (14) a turntable (C) of the object hanger (14); characterized in that the furnace body (11) comprises a bottom plate (111), an outer wall (112) extending from the bottom plate (111), and extending from the bottom plate (111) An inner wall (113) spaced apart from the outer wall (112), a top plate connecting the outer wall and the inner wall, and a closed space formed by the bottom plate (111), the outer wall (112), the inner wall (113) and the top plate (S The furnace body (11) further includes a first baffle (17) and a portion disposed in the closed space (S) respectively connected to the bottom plate (111), the outer wall (112), the inner wall (113) and the top plate a second baffle (18); the first baffle (17) and the second baffle (18) are separated by a certain distance and divide the confined space into a first partition space (S1) and a second partition space (S2) The first baffle (17) and the second baffle (18) are movably connected to the outer wall (112) or the inner wall (113); the evaporation source (A) is disposed in the first partition space (S1), The object hanger (14) and the turntable (C) are disposed in the second separation space (S2); 17) When the second flap (18) is opened, the turntable (C) moves the article hanger (14) from the second partition space (S2) into the first partition space (S1). 如申請專利範圍「第1項」所述的真空爐體,其特徵在於,蒸發源(A)包括第一蒸發源(A1)和第二蒸發源(A2),外壁(112)包括位於第一分隔空間(S1)的第一外壁和位於第二分隔空間(S2)的與第一外壁相連的第二外壁,內壁(113)包括位於第一分隔空間(S1)的第一內壁和位於第二分隔空間(S2)與第一內壁相連的第二內壁;第一蒸發源(A1)和第二蒸發源(A2)分別設在第一外壁和第一內壁,且第一蒸發源(A1)和第二蒸發源(A2)相對設置。 A vacuum furnace body as claimed in the first aspect of the invention, characterized in that the evaporation source (A) comprises a first evaporation source (A1) and a second evaporation source (A2), and the outer wall (112) comprises the first a first outer wall of the partition space (S1) and a second outer wall of the second partition space (S2) connected to the first outer wall, the inner wall (113) including a first inner wall located at the first partition space (S1) and located a second partition (S2) is connected to the first inner wall; the first evaporation source (A1) and the second evaporation source (A2) are respectively disposed on the first outer wall and the first inner wall, and the first evaporation The source (A1) and the second evaporation source (A2) are oppositely disposed. 如申請專利範圍「第1或2項」所述的真空爐體,其特徵在於,蒸發源(A)包括蒸發靶(12)和為蒸發靶(12)提供動力的蒸發靶源(13)。 A vacuum furnace body as described in the "Scope 1 or 2" of the patent application, characterized in that the evaporation source (A) comprises an evaporation target (12) and an evaporation target source (13) for powering the evaporation target (12). 如申請專利範圍「第1項」所述的真空爐體,其特徵在於,爐體本體(11)的外壁設有至少兩個門。 A vacuum furnace body according to the "Scope 1" of the patent application, characterized in that the outer wall of the furnace body (11) is provided with at least two doors. 如申請專利範圍「第3項」所述的真空爐體,其特徵在於,蒸發靶源(13)包括電弧靶源或平面靶源、中頻園柱靶源、直流靶源中的任一種或其任意組合。 The vacuum furnace body of claim 3, wherein the evaporation target source (13) comprises any one of an arc target source or a planar target source, an intermediate frequency cylindrical target source, and a direct current target source, or Any combination thereof. 一種真空爐體,其特徵在於,該真空爐體包括密閉的真空室,該真空室通過擋板(D")分隔成獨立的物件區(S2")和靶蒸發區(S1");物件區(S2"),用於放置被鍍物件(B); 靶蒸發區(S1"),用於給被鍍物件物理氣相沉積鍍膜;該真空爐體還包括控制部件,用於打開擋板(D"),將分隔的物件區(S2")與靶蒸發區(S1")相通;傳送部件(C"),用於將被鍍物件從物件區(S2")移動至靶蒸發區(S1")。 A vacuum furnace body, characterized in that the vacuum furnace body comprises a closed vacuum chamber, which is separated into a separate object area (S2") and a target evaporation area (S1") by a baffle (D"); (S2") for placing the object to be plated (B); a target evaporation zone (S1") for physically vapor-depositing a substrate to be plated; the vacuum furnace body further comprising control means for opening the baffle (D") to separate the object region (S2") from the target The evaporation zone (S1") communicates; the conveying member (C") is used to move the object to be plated from the object zone (S2") to the target evaporation zone (S1"). 如申請專利範圍「第6項」所述的真空爐體,其特徵在於,靶蒸發區相對設置有第一蒸發源(A1")和第二蒸發源(A2")。 A vacuum furnace body according to the "Scope 6" of the patent application, characterized in that the target evaporation zone is oppositely provided with a first evaporation source (A1") and a second evaporation source (A2"). 如申請專利範圍「第7項」所述的真空爐體,其特徵在於,第一蒸發源(A1")和第二蒸發源(A2")分別包括蒸發靶和為蒸發靶提供動力的蒸發靶源;擋板(D")包括第一擋板(17")和第二擋板(18")。 A vacuum furnace body according to the "Scope 7" of the patent application, characterized in that the first evaporation source (A1") and the second evaporation source (A2") respectively comprise an evaporation target and an evaporation target for powering the evaporation target. The source; the baffle (D") includes a first baffle (17") and a second baffle (18").
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