WO2011094060A3 - Pump baffle design for integrated pump and sputter source - Google Patents

Pump baffle design for integrated pump and sputter source Download PDF

Info

Publication number
WO2011094060A3
WO2011094060A3 PCT/US2011/020951 US2011020951W WO2011094060A3 WO 2011094060 A3 WO2011094060 A3 WO 2011094060A3 US 2011020951 W US2011020951 W US 2011020951W WO 2011094060 A3 WO2011094060 A3 WO 2011094060A3
Authority
WO
WIPO (PCT)
Prior art keywords
process chamber
chamber lid
pump
sputter source
baffle design
Prior art date
Application number
PCT/US2011/020951
Other languages
French (fr)
Other versions
WO2011094060A2 (en
Inventor
Philip Arnold Greene
Daniel Joseph Zehm
Original Assignee
Applied Materials, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials, Inc. filed Critical Applied Materials, Inc.
Publication of WO2011094060A2 publication Critical patent/WO2011094060A2/en
Publication of WO2011094060A3 publication Critical patent/WO2011094060A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering

Abstract

A method and apparatus for preventing deposition of condensate on the pump in the deposition chamber is provided. In one embodiment, a process chamber lid is provided, wherein the process chamber lid supports at least one vacuum pump having a port fluidly connecting the vacuum pump to a hole formed through the process chamber lid. The process chamber lid comprises at least one target unit coupled with a bottom surface of the process chamber lid for sputtering material on a substrate, wherein the target unit comprises at least one sputter target. The process chamber lid also comprises a plate coupled with the bottom surface of the process chamber lid and disposed between the hole and the target unit such that there is a gap between the process chamber lid and the plate and there is no direct line of sight between the sputter target and the port.
PCT/US2011/020951 2010-01-29 2011-01-12 Pump baffle design for integrated pump and sputter source WO2011094060A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US29955310P 2010-01-29 2010-01-29
US61/299,553 2010-01-29

Publications (2)

Publication Number Publication Date
WO2011094060A2 WO2011094060A2 (en) 2011-08-04
WO2011094060A3 true WO2011094060A3 (en) 2011-09-29

Family

ID=44320050

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2011/020951 WO2011094060A2 (en) 2010-01-29 2011-01-12 Pump baffle design for integrated pump and sputter source

Country Status (2)

Country Link
TW (1) TW201137147A (en)
WO (1) WO2011094060A2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6438320B2 (en) * 2014-06-19 2018-12-12 東京エレクトロン株式会社 Plasma processing equipment
CN111726927B (en) * 2020-05-21 2022-04-01 西北核技术研究院 Compact gas neutralization target chamber structure applied to negative hydrogen beam
WO2021245154A1 (en) * 2020-06-03 2021-12-09 Applied Materials, Inc. Deposition apparatus, processing system, and method of manufacturing a layer of an optoelectronic device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11245371A (en) * 1998-02-27 1999-09-14 Sanyo Electric Co Ltd Mask and squeegee
US20050006225A1 (en) * 2003-07-08 2005-01-13 Choi Young Wook Apparatus and method to deposit magnesium oxide film on a large area
US20060157346A1 (en) * 2003-07-04 2006-07-20 Dirk Cnockaert Rotating tubular sputter target assembly

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11245371A (en) * 1998-02-27 1999-09-14 Sanyo Electric Co Ltd Mask and squeegee
US20060157346A1 (en) * 2003-07-04 2006-07-20 Dirk Cnockaert Rotating tubular sputter target assembly
US20050006225A1 (en) * 2003-07-08 2005-01-13 Choi Young Wook Apparatus and method to deposit magnesium oxide film on a large area

Also Published As

Publication number Publication date
WO2011094060A2 (en) 2011-08-04
TW201137147A (en) 2011-11-01

Similar Documents

Publication Publication Date Title
USD694790S1 (en) Baffle plate for manufacturing semiconductor
WO2010042860A3 (en) Rf return path for large plasma processing chamber
WO2009097181A3 (en) Etching chamber having flow equalizer and lower liner
WO2014008484A3 (en) Method to produce highly transparent hydrogenated carbon protective coating for transparent substrates
WO2012015656A3 (en) Methods for depositing metal in high aspect ratio features
WO2010123877A3 (en) Cvd apparatus for improved film thickness non-uniformity and particle performance
WO2012015931A3 (en) Apparatus for controlling the flow of a gas in a process chamber
NZ610871A (en) An aerosol generating system with prevention of condensate leakage
WO2008156562A3 (en) Showerhead electrode assemblies for plasma processing apparatuses
WO2011059750A3 (en) Chamber for pecvd
WO2009126576A3 (en) Lower liner with integrated flow equalizer and improved conductance
TW200716773A (en) Apparatus and method for depositing thin films
WO2011137068A3 (en) Twin chamber processing system with shared vacuum pump
WO2008123060A1 (en) Vacuum processing apparatus
TW200712230A (en) Evaporation source machine and vacuum deposition apparatus using the same
WO2008021654A3 (en) Exhaust assembly for a plasma processing system and method
WO2011062940A3 (en) Large area plasma processing chamber with at-electrode rf matching
WO2012118606A3 (en) Thin heated substrate support
WO2009070765A3 (en) Prevention of substrate edge plating in a fountain plating process
WO2009097089A3 (en) Gas modulation to control edge exclusion in a bevel edge etching plasma chamber
WO2010114823A3 (en) Sputtering target for pvd chamber
WO2010132716A3 (en) Anodized showerhead
USD694791S1 (en) Baffle plate for manufacturing semiconductor
TW200940734A (en) Sputtering apparatus and film deposition method
WO2011094060A3 (en) Pump baffle design for integrated pump and sputter source

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 11737434

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 11737434

Country of ref document: EP

Kind code of ref document: A2