201137147 六、發明說明： 【發明所屬之技術領域】 本發明之實施例大體而言係關於用於塗佈玻璃或基板之沈積 腔室。更特定而言，本發明之實施例係關於幫浦擋板’其用於防 止冷凝物沈積於連接至沈積腔室蓋之真空幫浦中。 【先前技術】 在半導體裝置及玻璃顯示器之製造中，電漿腔室通常用以執 行諸如濺射之各種製造製程。大體而言’當製程氣體之混合物連 續流進腔室中且電源將該氣體激發至電漿狀態時，真空幫浦維持 腔室内之極低壓力。製程氣體混合物之成分經選擇以實現所期望 之製造製程。 在某些應用中，諸如建築玻璃塗佈，有時在濺射源後方’將 滿輪分子幫浦（turbomolecular pumps; TMPs)安設於物理氣相沈積 (physical vapor deposition; PVD)腔室之真空蓋上。該設置有助於減 少線内塗佈系統之整體長度。在該等腔室中，渦輪分子幫浦(TMPs) 有助於維持物理氣相沈積(PVD)製程所必需之低壓力。然而，主要 關注點在於，冷凝物在TMP轉子上沈積之問題、確保增加維護之 問題及抽送均勻問題。因此，需要擋板來減少TMP上之沈積且促 進均勻抽送，而不過度限制抽送速度。 【發明内容】 本文描述之實施例大體而言係關於一種裝置及方法，其用於 防止冷凝物沈積於真空幫浦中。在一實施例中，提供了一種製程 201137147 腔室。該製裎腔室可在該製程腔室之一壁上支撐至少—個真空幫 浦。該真空幫浦可具有一埠，該埠將該真空幫浦流體連接至穿過 該腔室壁形成之一孔。該製程腔室進一步包含至少—個靶材單 元’其與該壁搞接，用於在/基板上濺射材料，其中該靶材單元 包含至少一個濺射靶材。該製程腔室進一步包含一平板，其與該 壁耦接且安置於該槔與該靶材單元之間，以使得在該壁與該平板 之間存在~間隙且在該藏射輕材與該淳之間不存在直視線。 在另一實施例中，提供一種製程腔室蓋。該製程腔室蓋支樓 具有一埠之至少一個真空幫浦，該埠將該真空幫浦流體連接至穿 過該製程腔室蓋形成之一孔。該製程腔室蓋進一步包含至少一個 乾材單元’其與該製程腔室蓋之一底表面耦接，用於在一基板上 ，射材料，其中該靶材單元包含至少一個濺射靶材。該製程腔室201137147 VI. Description of the Invention: [Technical Field of the Invention] Embodiments of the present invention generally relate to a deposition chamber for coating a glass or a substrate. More particularly, embodiments of the present invention relate to a pump baffle' which serves to prevent condensate deposition in a vacuum pump connected to a deposition chamber cover. [Prior Art] In the manufacture of semiconductor devices and glass displays, plasma chambers are commonly used to perform various manufacturing processes such as sputtering. In general, the vacuum pump maintains an extremely low pressure in the chamber as the mixture of process gases continuously flows into the chamber and the power source energizes the gas to the plasma state. The components of the process gas mixture are selected to achieve the desired manufacturing process. In some applications, such as architectural glass coating, sometimes behind the sputtering source, the vacuum of the turbomolecular pumps (TMPs) is placed in a physical vapor deposition (PVD) chamber. Covered. This setting helps to reduce the overall length of the in-line coating system. In these chambers, turbo molecular pumps (TMPs) help maintain the low pressures necessary for physical vapor deposition (PVD) processes. However, the main concern is the problem of depositing condensate on the TMP rotor, ensuring increased maintenance issues and pumping uniformity issues. Therefore, a baffle is required to reduce deposition on the TMP and promote uniform pumping without unduly limiting the pumping speed. SUMMARY OF THE INVENTION The embodiments described herein are generally directed to an apparatus and method for preventing condensate from depositing in a vacuum pump. In one embodiment, a process 201137147 chamber is provided. The chamber can support at least one vacuum pump on one of the walls of the process chamber. The vacuum pump can have a port that connects the vacuum pump fluid to a hole formed through the wall of the chamber. The process chamber further includes at least one target unit 'which is coupled to the wall for sputtering material on the / substrate, wherein the target unit comprises at least one sputtering target. The process chamber further includes a flat plate coupled to the wall and disposed between the crucible and the target unit such that there is a gap between the wall and the flat plate and the hidden light material and the There is no direct line of sight between the two. In another embodiment, a process chamber cover is provided. The process chamber cover has at least one vacuum pump that connects the vacuum pump fluid to a hole formed through the process chamber cover. The process chamber cover further includes at least one dry material unit coupled to a bottom surface of the process chamber cover for projecting material on a substrate, wherein the target unit comprises at least one sputtering target. Process chamber
亦句... — ςγ- J 千板’其與該製程腔室蓋之底表面耦接且安置於該孔 一該靶材單元之間，以使得在該製程腔室蓋與該平板之間存在一 ’隙且在該機射乾材與該谭之間不存在直視線。 在又實施例中，提供了 一種製程腔室。該製程腔室包含： —輸送裝置，甘Μ ，、用於經由該製程腔室支撐及傳輸一基板；以及— 腔至主體，其旦* -t- 、”有多個腔室侧壁及一腔室底部。亦提供了 一腔官 盖’其中該腔宮装人 王 , 處包含：至少一個真空幫浦，其具有一埠，該琿 將該至少一個直外| $ ·、 4幫浦流體連接至穿過該製程腔室蓋形成之— * ΙίΛ jSl.至* 少__a 用 ± 固靶材單元，其與該腔室蓋之一底表面耦接， 於在該基板上幾鉍 n 該腔室蓋亦包括付料。該靶材单元可包含至少一個濺射靶材 孔與該靶材ΐ元〜平极，其與該腔室蓋之底表面耦接且安置於該 义之間’以使在得該腔室蓋與該平板之間存在一間 5 201137147 隙且在該至少一個濺射靶材與該真空幫浦上之該埠之間不存在直 視線。 【實施方式】 本文描述之實施例提供幫浦擋板’其用於防止在沈積腔室中 之幫浦上沈積。雖然論述係關於線内玻璃塗佈沈積腔室系統，但 是幫浦擋板之實施例可用於涉及安設於腔室蓋上之真空幫浦之任 何系統中。雖然此論述將與玻璃基板有關’但應瞭解以下實施例 中描述之該等裝置或方法不局限於與玻璃基板一起使用，而亦可 與其他種類之基板（諸如，太陽能面板、平板顯示器基板、半導 體晶圓或其他工件）一起使用。可使用本文所描述之幫浦擋板之 一種製程腔室為物理氣相沈積（physical vapor deposition; PVD)製 程腔室，諸如可購自位於加州聖大克勞拉市的應用材料股份有限 公司之AXL-870。 第1A圖為根據本文描述之一實施例之具有陰極單元1〇7及幫 浦擋板101之腔室蓋組件100之示意前視圖。用於支撐基板130 之輸送裝置102安置於腔室蓋組件1〇〇下方。在第ία圖中，可經 由腔室蓋組件100之前壁看見腔室蓋組件1〇〇之内部空間。應注 意，第1A圖未圖示完整製程腔室。然而，第3圖圖示物理氣相沈 積(physical vapor deposition; PVD)製程腔室350與放置於其上之 本發明之一實施例之腔室蓋及幫浦擋板之示意性簡化視圖。如第3 圖中所示’製程腔室350可包含氣體系統333，該氣體系統333 用於將製程氣體或載氣引導至賤射室中。製程腔室350亦可包含 用於引導玻璃基板（未圖示）之溝槽及/或閘門（未圖示），及經由 製程腔室350傳輸基板之輸送輪311。製程腔室350亦可包含諸如 201137147 水冷式防護罩331之防護罩’其用於收集未跌落於基板上之藏射 材料。防護罩331可自腔室壁水平延伸至製程腔室350中，且可 包括一下部部件，將該下部部件安置接近於輸送裝置且在經由製 程腔室350傳輸之基板下。防護罩331之上部及下部可彼此連接 (未圖示），以便其能分別自輸送裝置或其他通常附接至腔室壁之 腔室部件上提升起。製程腔室350亦可包括兩個陰極單元3〇7，該 兩個陰極單元307藉由端塊3〇8支撐於腔室蓋300之上。真空幫 浦擋板301可藉由介於陰極單元307之濺射靶材與真空幫浦3〇6 之淳之間的腔至蓋3 00支撐於水平位置。雖然真空幫浦通常安裝 於鄰接濺射源之腔室蓋上，但是在本實施例中，可在濺射源後方， 將一或多個真空幫浦3〇6安裝於腔室蓋300上。因此，在製程腔 室350之側壁上的真空槔上方可安置蓋套332，用以以阻塞抽送路 徑。製程腔室350可包含未示於第3圖中之額外部件。 第1A圖以更詳細之方式圖示具有幫浦擋板之腔室蓋組件之 實施例。帛1A圖圖示在腔室蓋組件1〇〇下方之輸送裂i 1〇2。輸 送裝置102操作以在磁控管或陰極單元雨之下傳輸待塗佈之基 板130 (諸如玻璃基板）。輸送裝置1〇2適用於將基板傳輸進入以 及離開製程腔室。因此，輸送裝置1〇2可縱向延伸，進一步超過 腔室蓋組件100之寬度（例如，如第1B圖所示，輸送裝置^⑽可 進一步向右或向左延伸）。 如第1A圖所示，輸送裝置102可包含相互平行之—系列滾軸 (在110處圖示一個滚軸；第1B圖圖示三個滾軸）或長圓筒，該 等滾軸或長圓筒各具有可固定安置於各滾軸UG周圍之複數個二 形環狀輪胎或輪子（一個〇形環狀輪胎經標示為11〇,以形成輸 送表面來支揮玻璃基板心如第四圖中所示，各滾轴ιι〇可旋 201137147 轉地支標於框架上，且可機械地㈣至至少—個鍵輪⑴或滑輪。 驅動皮帶114可齡鏈輪113或滑輪拉緊或拉伸，及繞著額外電 動鍵輪或滑輪拉緊或拉伸1動鏈輪113或滑輪之旋轉使驅動皮 帶114移動’驅動皮帶114之移動又使鍵輪或滑輪保持旋轉，進 而使滾軸11G旋轉。當滾軸UG旋轉時，其可斷續地或連續地沿 輸送裝置102移動玻璃基板。應注意，輸送裝置1〇2不局限於上 述實施例，而可為經由製程腔室有效傳輸基板之任何類型的輸送 裝置。舉例而言，輸送裝置102亦可使用皮帶（如與輪子相對而 言）作為輸送表面。 如第1A圖所示，腔室蓋組件1〇〇可經設置為空心類盒形結 構。如第1A圖所示，腔室蓋組件1〇〇可包含形成類盒形結構底部 之腔室蓋103及自腔室蓋103頂表面之邊緣垂直突出之多個壁， 用以形成包殼《腔室蓋組件1〇〇亦可包含處於類盒形結構頂面上 之蓋套，或在其他實施例中，類盒形結構可保持敞開。在另一實 施例中，腔室蓋組件100可為敞開結構，該敞開結構包含腔室蓋 103而不具有形成包殼之多個壁。腔室蓋組件1〇〇可在其一端或兩 端處收納設施及水管線路。舉例而言’第1A圖圖示面板120，其 用於腔室蓋103左端處之公用設施連接。另外，用於旋轉陰極單 元107之驅動器121亦可連接於腔室103之末端上。驅動器可經 佈置為至少部分處於塗佈腔室之外。驅動軸可延伸穿過提供於腔 室蓋組件1〇〇中之旋轉真空導引。 可使用濺射塗佈製程塗佈玻璃基板。該製程可為靜態製程或 動態製程。在靜態製程中，將基板放置於沈積腔室之内。在動態 製程中，在塗佈製程期間，連續地將基板傳輸經過複數個濺射靶 材。在濺射塗佈製程期間，在可抽真空之沈積腔室中維持受控真 8 201137147 空，以使㈣材料粒子在將塗佈的玻璃基板上移位域積為薄 膜。如上所述，材單元可為磁控f或陰極單元且通常包含水平 女裝於沈積腔至中之一或多個狹長圓柱形管。 第1B圖為圖示於第^圖中之本發明之—實施例的腔室蓋及 幫浦擋板與在該腔室蓋及幫浦擋板下方的輪送裝置之縱向側視 圖。第1B圖圖示兩個陰極單元1〇7。然而，應注意，物理氣相沈 積（physical vapor depositi〇n; pVD)系統可包含一個陰極、三個陰 極、四個陰極或甚至更多個陰極。陰極單元1〇7使用端塊⑽輕 接至腔室蓋1G3之底部，該端塊⑽支撐處於沈積腔室中之水平 位置的陰極單元107且連接陰極單元1〇7至腔室蓋。端塊1〇8可 將電氣接線及冷卻水接線由腔室蓋組件⑽攜至陰極單元1〇7。製 程腔室中輸送裝置102上之陰極單元1〇7之高度將視塗佈製程而 定，因此該高度可調整。 在示於第1B圖中之實_中，使Μ塊⑽在各陰極單元 107之末端處將陰極單元107與腔室蓋1()3_。如上所論述，可 存在-個旋轉陰極、兩個旋轉陰極或更多個旋轉陰極。在盆他實 施例中，陰極單元可為平面的。如第1Α圖中所示，腔室蓋組件 100可在腔室蓋1G3之上表面上容納且支樓三個真空幫浦⑽。提 供真空幫们06以抽空沈積腔室之内部空間。在某些要求高真空 抽送系統之應用中，真空幫冑1〇6可為渦輪分子幫浦 (tUrb〇m〇leCular pumps; TMPs)。渦輪分子幫浦(ΤΜρ)依賴於以接近 待抽送氣體分子之速度來旋轉之旋轉件。在玻璃基板之塗佈製程 期間’ ΤΜΡ可將沈積腔室抽空至極低壓力，諸如約3毫托。真办 幫浦⑽可沿腔室請之長度方向均勾且中央地分隔開心 然圖示於第1Α圖中之實施例包括三個真空幫浦1()6，但是腔室蓋 201137147 103可支撐一個真空幫浦106、或兩個真空幫浦1〇6、或更多個真 空幫浦1〇6。真空幫浦1〇6位於腔室蓋組件1〇〇之内，以使得真空 幫浦埠朝下面向陰極單元10八各真空幫浦埠可將各真空幫二 流體連接至形成穿過製程腔室蓋103之孔。將真空幫浦 =1〇6放置 於陰極單元1G7後方（如相對於在腔室侧壁後方且鄰接於陰極單 元107)有助於減少線内腔室之整體長度，因為此舉促進在二玻璃 基板之傳輸路徑的較短距離内可具有大量靶材單元之線内佈置。 幫浦擋板101可设置於真空幫浦106之埠與陰極單元i们之間。 =下文更料論述，幫浦擔板HU可為長矩形平板，其覆蓋腔室 盍103下方之足夠面積，以使得自乾材（陰極單元a⑺之任何部 分不存在進入真空幫浦106之埠中之直視線。 如第1B圖中更清晰圖示，各陰極單元1〇7包含可旋轉陰極 ⑽。陰極HM可由適合的非磁性材料形成，諸如黃鋼或不錄鋼 如第汨圖中進一步圖示，各陰極1〇4具有圓柱形乾材⑽，該圓 柱形把材105可為經選擇的塗佈層或乾材材料層，其將被沈積在 正被塗佈之玻璃基板上。在一實施例中，可將不同靶材材料施加 於圓柱形靶材105之不同部分，以便藉由轉動陰極HM將特定選 擇的塗布塗佈材料攜帶人_位置。可在圓柱形乾材奶間之較 f距離中將陰極1G4排成—列。在塗佈製程期間，各BJ柱形輕材 、可X步進方式或以連續方式繞著縱向中心抽旋轉，而把材内之 2系統（转在）為固定的。端塊⑽亦可包含旋轉機構，該 上4機構用於傳遞軸或錠子之旋轉用以移動磁體組件，而在實質 單復式）之路徑上制糾表面，其中磁體組件收納於乾材 ^ 内σΡ t間中。可使用耦接至陰極104之驅動装載機121來 、旋轉該等可旋轉陰極單元可防止無材表面上粒子之再沈 201137147 積，且可在沈積腔室内排成一列。在本發明之特定實施例中，端 塊108可包含傾斜機構’其用以提供靶材單元及靶材的傾斜。 陰極單元107可使用冷卻劑管道（未圖示）來冷卻，該冷卻 劑管道亦可由縱向延伸於陰極管1〇4之下部中之適合的材料製 成β適合的冷卻劑（諸如水）可經由冷卻劑管道循環。 雖然第1Α圖至第1Β圖圖示旋轉的圓柱形濺射源，但是本發 明並不局限於該類型之靶材。應注意，其他實施例可包括平面靶 材來替代。在另一實施例中（未圖示），可將平面磁控管排成一列， 且可裝備有用於在靶材濺射表面之上發電之固定或可移動之磁體 系統（例如，粒子執道）。該磁體系統中之磁體可由驅動系統驅動。 可於在各平面靶材後方安置冷卻系統以確保靶材之冷卻。 真空幫浦1〇6可放置於極接近於濺射源（諸如陰極單元1〇7) 所在之處。在某些情況下，真空幫浦1〇6對於陰極單元1〇7之接 近可能導致冷凝物在幫浦轉子及其附近處之非預期沈積。自濺射 源（陰極單元107)濺射之一般方向為向下朝向玻璃基板。然而， 腔室内之散射使某些量之濺射靶材材料返回朝向腔室蓋1〇3及朝 向真空幫浦106之入口埠。若將入口埠敞開，則真空幫浦1〇6將 接收在入口埠115附近處向上且進入其内之過多沈積材料。朝真 空幫浦106之材料散射會導致保養、製程及維護之問題增加。因 此，如第1Α圖及第1Β圖所示，將幫浦擋板1〇1放置於真空幫浦 106下方及濺射源（諸如陰極單元107)上方，以便阻止材料朝向 真空幫浦1〇6散射且進入其中。 幫浦擋板1〇1可為用平面金屬片（諸如銅）或其他適合的材 料製造之固體平板。幫浦擋板1〇1可包含一個固體平板，或包含 使用耦接裝置（諸如鉚釘）彼此耦接之多個重疊或鄰接之平板。 11 201137147 幫浦擋板101可使用（例如）可焊接至平板之小支柱來附接至或 麵接至腔室蓋103之底部面。支柱可足夠小以便不阻塞氣流或進 入口。支柱可包括在末端上具有螺母或螺栓之螺桿，以便允許移 除幫浦擋板101，用以進行維護、替換、清潔等。形成幫浦擋板 101之該或該等平板可足夠厚’以便具有足夠剛性以固持形狀且經 得起腔室内之操作溫度。另外’可藉由用於將冷凝物固持至幫浦 擔板101上之沈積篩網來覆蓋一或多個平板。幫浦擋板1〇1之尺 寸及設置應使得在任何真空幫浦埠（如第2圖中215所示）與陰 極單元107之圓柱形靶材之間不存在直視線（如第ία圖中藉由虛 線L所示之向度此舉防止真空幫浦埠暴露於濺射材料。因此’ 幫浦檔板101可沿接近任何陰極末端上之端塊1〇8之濺射陰極電 極的整個長度方向延伸。如第1B圖中所示，幫浦擋板1〇1亦應設 置於腔室蓋103之下，以使得在幫浦擋板1〇1與腔室蓋1〇3之底 表面之間存在間隙g。維持腔室蓋與幫浦檔板之間作為真空間隔之 間隙g ’以有助於縮小抽送不均勻性。 為了更清晰圖示幫浦擋板相對於幫浦入口埠之放置，第2圖 圖示自腔室蓋下方觀察之第1A圖及第1B圖中所圖示的腔室蓋之 一實施例。因為幫浦擋板201未延伸至腔室蓋之整個面積，所以 腔室蓋203之底面與幫浦擋板201重疊，且在第2圖所示之透視 圖中，自幫浦擔板201之所有邊緣後方可看見該腔室蓋203之底 面。虛線圓圈代表位於幫浦擋板201後方之真空幫浦入口埠215 之輪廓，且圖示幫浦擋板201相對於真空幫浦入口琿215之放置。 應注意，雖然第2圖圖示三個真空幫浦之輪廓，但該實施例並不 局限於三個幫浦，而且該實施例可用於具有一個幫浦、兩個幫浦、 四個幫浦或更多個幫浦之佈置。幫浦擋板2〇1可覆蓋所有三個真 12 201137147 工幫浦入口埠215，且可水平及縱向延伸超過真空幫浦入口埠 215，以便在所有側面上產生突出結構。 如第2圖中所示，幫浦擋 板2〇1可大出真空幫浦入口埠215且超過真空幫浦入口埠215之 邊緣之距離d，以便防止賤射材料散射至真空幫浦入口埠215 中。 么δ Tsl ·**_ 不約—個平均自由路控（mean free path; mfp)之間隙g 及具有介於2·3個平均自由路徑(mfp)之間的-距離^/之突出結構 提供足夠機會來散射及隨後在氣相濺射原子進人真空幫浦之前將 其由氣相中移除。使用該突出結構尺寸，氣體原子在到達幫浦之 刖將必須反彈於幫浦擋板之上且自擋板處移動2-3個mfp。在用於 玻璃基板濺射之約3毫托共用濺射壓力下，對於氣體原子而言， 50毫米大致相當於一個平均自由路徑（mfp)。因此，介於幫浦擋板 101與腔室蓋103之底表面之間的間隙g (如第1]5圖中所示）可 約為50毫米。另外，幫浦擋板2〇1可具有與位於真空幫浦埠215 之周圍（由第2圖中虛線所圖示）正下方的幫浦播板2〇ι部分的外緣 相距約120毫米（略大於兩倍mfp)之突出距離以如第2圖中所 示）。雖然將突出距“增加至A於三倍mfp會增大對真空幫浦之 保護以免沈積，但此舉可能會大幅減少抽送速度。 在某些實施例中’幫浦擋板1Q1可為沿某些或全部邊緣具有 突起邊緣之平面形狀。舉例而言，在四邊形平板狀況下，一個邊 緣、兩個邊緣、三個邊緣或所有四個邊緣皆可突起。在另一實施 例中，所有四個平板邊㈣可垂直於平板之水平面突起（形成具 有敞開頂面之類盒形）。在此等實_巾，突起邊緣可有助於在幫 浦下方形成真空間隔且可用於㈣抽送，使得沿著㈣擋板長度 的抽送是均句的。舉例而言，若腔室蓋上僅存在—個真空幫浦， 13 201137147 則在幫浦擋板之中間處會具有比其末端處更有效率的抽送。因 此，藉由在某些期望位置處突起擋板平板之邊緣，或在幫浦擋板 為類似類盒形結構之實施例中藉由沿著幫浦擋板的突起垂直側面 產生穿孔，可在沿幫浦擋板的某些區域上控制抽送。因此，該等 設置可促進更均勻之抽送。在另一實施例中，平板邊緣可與平板 之水平面成鈍角突起（形成具有敞開頂面之敞開類杯形）。在又一 實施例中，平板邊緣可垂直於腔室蓋之平面突起，且接著突起邊 緣之頂部則可在與平板之水平面成鈍角處呈喇队形展開。在又一 實施例中，幫浦擋板101可為彎曲平板，該彎曲平板具有面向蓋 之凹側。可針對幫浦擋板101之不同設置來設計其他實施例，以 防止濺射材料在幫浦瑋上沈積。 如上所說明，幫浦擋板101覆蓋腔室蓋103下方之足夠面積， 以使得自靶材末端不存在進入幫浦瑋中之直視線，如藉由第1A圖 中虛線L所示。因此，介於幫浦擂板與真空幫浦埠之間的突出程 度將至少視在濺射陰極後方的真空幫浦數目及濺射陰極之尺寸而 定。真空幫浦之數目將視應用（即需要多少抽送）及幫浦之尺寸 (例如，藉由直徑及抽送速度決定）而定。幫浦擋板與真空幫浦 埠之間的突出結構應提供足夠障礙，以防止濺射材料倒伏於幫浦 埠中。舉例而言，在具有僅一個真空幫浦及一長陰極之實施例中， 縱向突出結構可能需要大於水平突出結構，以免具有自濺射陰極 至真空幫浦入口埠之任何部分的直視線。另外，製程腔室操作壓 力將決定氣體原子之平均自由路徑。因此，操作壓力的大量増加 將改變平均自由路徑，因此需要不同幫浦擋板尺寸來達成相似之 障礙效果。然而，在玻璃沈積腔室之操作期間通常所用之低壓下， 平均自由路徑之差異應極小。 201137147 應注意，在本發明之替代實施例中， 垂直位置上之陰極單元’以使得靶材材料側向濺射裝於 對而言）至經由具有載體系統之腔室輪 （如與向下相 側壁處形成公用設施連接。在該實施例中，^可在腔室之 如上所述相對峰材及幫料安置，^個幫浦擋板可 变罝6史置來安置。 因而’提供了用於防止冷凝物沈積於沈積㈣中真 之幫浦檔板。幫讀板上之突出結構及介 '/上 入口埠所在之處之腔室蓋之間的垂直距離之尺寸二/、真空幫浦 濺射原子在進人真空幫料之前散射及自:二=促使 :=r_ 使〜-二: 儘管上述内容係針對本發明之實施例，但 之基本範_情況下可設計本發明之一不脫離本發明 明的範4係由以下巾請專利範圍來決定。夕貫施例’且本發 【圖式簡單說明】 因此，可詳細理解本發明之上述特徵結構之 要概述之本發明之更特定描述可參照實施例進行文簡 示於附加圖式中。㈣，應注意，附加圖式 二貫施例圖 :施例，且因此不欲視為綱之限制，本發明;;= 有效之實施例。 卞一他同專 圖為本發狀—實施狀腔室蓋組件及幫浦擋板盘在 該腔至蓋組件及幫浦擋板下方之輸送裝置之前視圖。 第圖為本發明之一實施例之腔室蓋組件及幫浦擋板與在 該腔室蓋組件及幫浦擋板下方之輸送裝置之縱向侧視圖。 15 201137147 第2圖為自幫浦擋板下方觀察之本發明之一實施例的腔室蓋 及幫浦擋板之透視圖。 第3圖為製程腔室與放置於其上之本發明之一實施例之腔室 蓋及幫浦擋板之示意圖。 可預期一個實施例中揭示之元件可有利地用於其他實施例中 而無需特定敘述。 【主要元件符號說明】 100 腔室蓋組件 101 幫浦擔板 102 輸送裝置 103 腔室蓋 104 陰極 105 圓柱形靶材 106 真空幫浦 107 陰極單元 108 端塊 110 滾軸 111 〇形環狀輪胎 113 電動鏈輪 114 驅動皮帶 115 入口璋 120 面板 121 驅動器/驅動裝載機 130 基板 201 幫浦擋板 203 腔室蓋 215 真空幫浦入口埠 300 腔室蓋 301 真空幫浦擋板 306 真空幫浦 307 陰極單元 308 端塊 311 輸送輪 331 水冷式防護罩 332 蓋套 333 氣體系統 350製程腔室亦 ... — — — J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J J There is a gap and there is no direct line of sight between the machine and the tan. In yet another embodiment, a process chamber is provided. The process chamber comprises: a transport device, a sorghum, for supporting and transporting a substrate via the process chamber; and - a cavity to the body, the denier*-t-, "having a plurality of chamber sidewalls and a At the bottom of the chamber, a cavity cover is also provided, wherein the cavity is filled with a king, and the chamber includes: at least one vacuum pump having a cymbal, the cymbal of the at least one direct outer | $ ·, 4 pump fluid Connected to the chamber cover through the process chamber - * ΙίΛ jSl. to * less __a with a solid target unit coupled to a bottom surface of the chamber cover, on the substrate The chamber cover also includes a charge. The target unit may include at least one sputtering target hole and the target unit to the flat pole coupled to the bottom surface of the chamber cover and disposed between the senses So that there is a 5 201137147 gap between the chamber cover and the plate and there is no direct line of sight between the at least one sputter target and the crucible on the vacuum pump. [Embodiment] Embodiments provide a pump baffle that is used to prevent deposition on a pump in a deposition chamber. The in-line glass coating deposition chamber system, but the embodiment of the pump baffle can be used in any system involving a vacuum pump mounted on the chamber lid. Although this discussion will be related to the glass substrate 'but it should be understood The devices or methods described in the following embodiments are not limited to use with glass substrates, but may also be used with other types of substrates such as solar panels, flat panel displays, semiconductor wafers, or other workpieces. One of the processing chambers of the pump baffle described herein is a physical vapor deposition (PVD) process chamber, such as AXL, available from Applied Materials, Inc., Santa Clara, Calif. 870. Figure 1A is a schematic front elevational view of a chamber lid assembly 100 having a cathode unit 1〇7 and a pump baffle 101 in accordance with one embodiment described herein. A delivery device 102 for supporting a substrate 130 is disposed in a chamber The lid assembly is below the lid. In the Figure, the interior space of the chamber lid assembly 1 can be seen through the front wall of the chamber lid assembly 100. It should be noted that Figure 1A is not shown. The process chamber. However, FIG. 3 illustrates a schematic representation of a physical vapor deposition (PVD) process chamber 350 and a chamber cover and a pump baffle of an embodiment of the present invention placed thereon. Simplified view. As shown in Fig. 3, the process chamber 350 can include a gas system 333 for directing process gas or carrier gas into the firing chamber. The process chamber 350 can also be included for A groove and/or a gate (not shown) for guiding a glass substrate (not shown), and a transfer wheel 311 for transporting the substrate via the process chamber 350. The process chamber 350 may also include a protection such as the 201137147 water-cooled shield 331 The cover 'is used to collect the hidden material that has not fallen on the substrate. The shield 331 can extend horizontally from the chamber wall into the process chamber 350 and can include a lower component that is positioned proximate to the delivery device and under the substrate that is transported through the process chamber 350. The upper and lower portions of the shield 331 can be coupled to one another (not shown) such that they can be lifted from the delivery device or other chamber components that are typically attached to the chamber wall, respectively. The process chamber 350 can also include two cathode units 3〇7 supported on the chamber cover 300 by end blocks 3〇8. The vacuum pump baffle 301 can be supported in a horizontal position by a cavity between the sputtering target of the cathode unit 307 and the vacuum pump 3〇6 to the cover 300. Although the vacuum pump is typically mounted on the chamber cover adjacent the sputtering source, in the present embodiment, one or more vacuum pumps 3〇6 can be mounted to the chamber cover 300 behind the sputtering source. Therefore, a cover 332 can be placed over the vacuum raft on the side wall of the process chamber 350 to block the pumping path. Process chamber 350 may include additional components not shown in FIG. Figure 1A illustrates an embodiment of a chamber cover assembly having a pump baffle in a more detailed manner. Figure 1A shows the transport crack i 1〇2 below the chamber lid assembly 1〇〇. The transport device 102 operates to transport a substrate 130 (such as a glass substrate) to be coated under rain of a magnetron or cathode unit. The delivery device 1〇2 is adapted to transport the substrate into and out of the process chamber. Thus, the delivery device 1〇2 can extend longitudinally beyond the width of the chamber lid assembly 100 (e.g., as shown in Figure 1B, the delivery device (10) can extend further to the right or left). As shown in FIG. 1A, the transport device 102 can include a series of rollers (one roller at 110; one roller at 1B) or a long cylinder, which are parallel to each other, such rollers or long cylinders. Each has a plurality of two-shaped annular tires or wheels that can be fixedly disposed around each of the rollers UG (one dome-shaped tire is labeled as 11 〇 to form a conveying surface to support the glass substrate as in the fourth figure It can be seen that each roller ιι 〇 can be rotated to the frame of 201137147, and can be mechanically (four) to at least one of the key wheels (1) or the pulley. The driving belt 114 can be tensioned or stretched by the sprocket 113 or the pulley, and the winding The additional electric key wheel or pulley tensions or stretches the 1 motion sprocket 113 or the rotation of the pulley causes the drive belt 114 to move. The movement of the drive belt 114 causes the key wheel or pulley to keep rotating, thereby rotating the roller 11G. When the shaft UG rotates, it can intermittently or continuously move the glass substrate along the conveying device 102. It should be noted that the conveying device 1〇2 is not limited to the above embodiment, but may be any type that effectively transports the substrate via the processing chamber. Conveying device. For example, conveyor A belt (as opposed to a wheel) can also be used as the conveying surface. As shown in Figure 1A, the chamber lid assembly 1 can be configured as a hollow box-like structure. As shown in Figure 1A, the chamber The cover assembly 1A may include a chamber cover 103 forming a bottom of the box-like structure and a plurality of walls projecting perpendicularly from an edge of the top surface of the chamber cover 103 for forming a cladding "the chamber cover assembly 1" The cover is included on the top surface of the box-like structure, or in other embodiments, the box-like structure can remain open. In another embodiment, the chamber cover assembly 100 can be an open structure that includes a cavity The chamber cover 103 does not have a plurality of walls forming a cladding. The chamber cover assembly 1 can house facilities and water lines at one or both ends thereof. For example, 'FIG. 1A illustrates a panel 120 for A utility connection at the left end of the chamber cover 103. Additionally, a driver 121 for rotating the cathode unit 107 can also be coupled to the end of the chamber 103. The driver can be disposed at least partially outside of the coating chamber. Extendable through the chamber cover assembly 1 Rotating vacuum guiding. The glass substrate can be coated by a sputtering coating process. The process can be a static process or a dynamic process. In a static process, the substrate is placed in a deposition chamber. In a dynamic process, the coating is applied. During the cloth manufacturing process, the substrate is continuously transported through a plurality of sputtering targets. During the sputtering coating process, the controlled true 8 201137147 is maintained in the vacuumable deposition chamber so that the (4) material particles are coated The displacement domain on the glass substrate of the cloth is a film. As described above, the material unit can be a magnetically controlled f or cathode unit and typically comprises one or more elongated cylindrical tubes in the deposition chamber to the horizontal. It is a longitudinal side view of the chamber cover and the pump baffle of the embodiment of the invention illustrated in Fig. 4 and the wheeling device below the chamber cover and the pump baffle. FIG. 1B illustrates two cathode units 1〇7. However, it should be noted that a physical vapor deposition (pVD) system may comprise one cathode, three cathodes, four cathodes or even more cathodes. The cathode unit 1〇7 is lightly connected to the bottom of the chamber cover 1G3 using an end block (10) which supports the cathode unit 107 in a horizontal position in the deposition chamber and connects the cathode unit 1〇7 to the chamber cover. The end blocks 1〇8 carry electrical wiring and cooling water connections from the chamber cover assembly (10) to the cathode unit 1〇7. The height of the cathode unit 1〇7 on the transport unit 102 in the process chamber will depend on the coating process, so the height can be adjusted. In the real image shown in Fig. 1B, the crucible block (10) is provided with the cathode unit 107 and the chamber cover 1 () 3_ at the end of each cathode unit 107. As discussed above, there may be one rotating cathode, two rotating cathodes or more rotating cathodes. In the basin embodiment, the cathode unit can be planar. As shown in Fig. 1, the chamber cover assembly 100 can accommodate and support three vacuum pumps (10) on the upper surface of the chamber cover 1G3. A vacuum is provided to evacuate the interior space of the deposition chamber. In some applications requiring a high vacuum pumping system, the vacuum 胄1〇6 can be a turbo molecular pump (TUrb〇m〇leCular pumps; TMPs). The turbomolecular pump (ΤΜρ) relies on a rotating member that rotates at a speed close to the gas molecules to be pumped. During the coating process of the glass substrate, the deposition chamber can be evacuated to an extremely low pressure, such as about 3 mTorr. The real pump (10) can be hooked along the length of the chamber and separated centrally. The embodiment shown in Figure 1 includes three vacuum pumps 1 () 6, but the chamber cover 201137147 103 can support A vacuum pump 106, or two vacuum pumps 1〇6, or more vacuum pumps 1〇6. The vacuum pump 1〇6 is located within the chamber cover assembly 1〇〇 such that the vacuum pump 埠 is directed downward toward the cathode unit 10 and each vacuum pump can connect the vacuum two fluids to form a process chamber The hole of the cover 103. Placing a vacuum pump = 1 〇 6 behind the cathode unit 1G7 (as opposed to behind the chamber sidewall and adjacent to the cathode unit 107) helps to reduce the overall length of the in-line chamber, as this promotes the use of two glasses The in-line arrangement of a plurality of target units may be within a short distance of the substrate's transmission path. The pump baffle 101 can be disposed between the vacuum pump 106 and the cathode unit i. = As discussed later, the pumping plate HU can be a long rectangular plate that covers a sufficient area below the chamber 盍103 so that any part of the cathode material a (7) does not exist in the enthalpy of the vacuum pump 106. Straight line of sight. As illustrated more clearly in Figure 1B, each cathode unit 1〇7 comprises a rotatable cathode (10). The cathode HM may be formed of a suitable non-magnetic material, such as yellow steel or unrecorded steel as further illustrated in the figure. Show that each cathode 1〇4 has a cylindrical dry material (10), which may be a selected coating layer or a layer of dry material that will be deposited on the glass substrate being coated. In an embodiment, different target materials can be applied to different portions of the cylindrical target 105 to carry a particular selected coating coating material to the person's position by rotating the cathode HM. The distance from the middle to the cathode 1G4 is arranged in a row. During the coating process, each BJ columnar light material can be rotated in the X stepping manner or in a continuous manner around the longitudinal center, and the 2 systems in the material are transferred. ) is fixed. The end block (10) may also include a rotating mechanism The means 4 for transmitting the rotation of the shaft or spindle for moving the magnet assembly, the surface prepared in substance correct single duplex) of the path, wherein the magnet assembly is accommodated in the dry wood in time t ^ the σΡ. The rotatable cathode unit can be rotated using a drive loader 121 coupled to the cathode 104 to prevent the particles from re-sinking on the surface of the material and can be arranged in a row within the deposition chamber. In a particular embodiment of the invention, the end block 108 can include a tilt mechanism ' to provide tilting of the target unit and the target. The cathode unit 107 may be cooled using a coolant conduit (not shown) which may also be made of a suitable material extending longitudinally in the lower portion of the cathode tube 1〇4 to a suitable coolant (such as water) via The coolant pipe circulates. Although the first to the first drawings illustrate a rotating cylindrical sputtering source, the present invention is not limited to this type of target. It should be noted that other embodiments may include a planar target instead. In another embodiment (not shown), the planar magnetrons can be arranged in a row and can be equipped with a fixed or movable magnet system for generating electricity over the target sputtering surface (eg, particle obstruction) ). The magnets in the magnet system can be driven by a drive system. A cooling system can be placed behind each planar target to ensure cooling of the target. The vacuum pump 1〇6 can be placed in close proximity to the sputtering source (such as the cathode unit 1〇7). In some cases, the proximity of the vacuum pump 1〇6 to the cathode unit 1〇7 may result in undesired deposition of condensate at and near the pump rotor. The general direction of sputtering from the sputtering source (cathode unit 107) is downward toward the glass substrate. However, scattering within the chamber returns some amount of sputter target material back toward the chamber cover 1〇3 and toward the entrance of the vacuum pump 106. If the inlet 埠 is opened, the vacuum pump 1 〇 6 will receive excess deposited material that is up and into the vicinity of the inlet 埠 115. Scattering of material into the vacuum pump 106 can lead to increased maintenance, process and maintenance issues. Therefore, as shown in FIG. 1 and FIG. 1 , the pump baffle 1〇1 is placed under the vacuum pump 106 and above the sputtering source (such as the cathode unit 107) to prevent the material from facing the vacuum pump 1〇6. Scatter and enter it. The pump baffle 1〇1 can be a solid plate made of a flat metal sheet such as copper or other suitable material. The pump baffle 1〇1 may comprise a solid plate or a plurality of overlapping or abutting plates coupled to one another using coupling means such as rivets. 11 201137147 The pump baffle 101 can be attached to or affixed to the bottom face of the chamber cover 103 using, for example, a small post that can be welded to the plate. The struts can be small enough to not block airflow or access. The struts may include a screw having a nut or bolt on the end to allow removal of the pump baffle 101 for maintenance, replacement, cleaning, and the like. The or the plates forming the pump baffle 101 may be thick enough to have sufficient rigidity to retain the shape and to withstand the operating temperature within the chamber. Alternatively, one or more panels may be covered by a deposition screen for holding the condensate onto the pumping plate 101. The size and arrangement of the pump baffle 101 should be such that there is no direct line of sight between any vacuum pump (as shown at 215 in Figure 2) and the cylindrical target of the cathode unit 107 (as in Figure ία) This prevents the vacuum pump 埠 from being exposed to the sputter material by the directionality shown by the dashed line L. Thus, the pump baffle 101 can be along the entire length of the sputter cathode electrode of the end block 1 〇 8 on either end of the cathode. The direction is extended. As shown in Fig. 1B, the pump baffle 1〇1 should also be disposed under the chamber cover 103 so as to be on the bottom surface of the pump baffle 1〇1 and the chamber cover 1〇3. There is a gap g between the chamber cover and the pump baffle as a gap between the vacuum gaps to help narrow the pumping unevenness. For a clearer illustration of the placement of the pump baffle relative to the pump inlet Figure 2 illustrates an embodiment of the chamber cover illustrated in Figures 1A and 1B as viewed from below the chamber cover. Since the pump baffle 201 does not extend to the entire area of the chamber cover, The bottom surface of the chamber cover 203 overlaps with the pump baffle 201, and in the perspective view shown in FIG. 2, all from the pump plate 201 The bottom surface of the chamber cover 203 is visible behind the edge. The dashed circle represents the contour of the vacuum pump inlet port 215 located behind the pump baffle 201, and the placement of the pump baffle 201 relative to the vacuum pump inlet port 215 is illustrated. It should be noted that although FIG. 2 illustrates the contours of three vacuum pumps, the embodiment is not limited to three pumps, and the embodiment can be used to have one pump, two pumps, four gangs. Pu or more of the arrangement of the pump. The pump baffle 2〇1 can cover all three true 12 201137147 Gongpu inlet 埠215, and can extend horizontally and longitudinally beyond the vacuum pump inlet 埠215 for all sides A protruding structure is produced on the upper side. As shown in Fig. 2, the pump baffle 2〇1 can be larger than the vacuum pump inlet port 215 and exceeds the distance d of the edge of the vacuum pump inlet port 215 to prevent the scattering material from scattering to Vacuum pump inlet 埠 215. δ δ Tsl · ** _ _ _ a mean free path (mfp) gap g and has between 2.3 total mean path (mfp) - The protruding structure of distance ^/ provides sufficient opportunity to scatter and subsequently in the gas The sputtered atoms are removed from the gas phase before entering the vacuum pump. With this protruding structure size, the gas atoms will have to bounce above the pump baffle and move from the baffle after reaching the pump. 3 mfp. Under a common sputtering pressure of about 3 mTorr for sputtering on a glass substrate, 50 mm is roughly equivalent to an average free path (mfp) for gas atoms. Therefore, between the pump baffles 101 The gap g (as shown in Fig. 1) of the bottom surface of the chamber cover 103 may be about 50 mm. In addition, the pump baffle 2〇1 may have and be located around the vacuum pump 215. The outer edge of the 2nd layer of the pumping board immediately below (shown by the broken line in Fig. 2) is separated by a distance of about 120 mm (slightly more than twice mfp) as shown in Fig. 2). Although the protrusion distance "increased to A by three times mfp will increase the protection of the vacuum pump from deposition, this may significantly reduce the pumping speed. In some embodiments, the 'pull baffle 1Q1 may be along a certain Some or all of the edges have a planar shape with raised edges. For example, in the case of a quadrilateral flat, one edge, two edges, three edges, or all four edges may protrude. In another embodiment, all four The edge of the plate (4) can be perpendicular to the horizontal plane of the plate (forming a box shape with an open top surface). In this case, the edge of the protrusion can help to form a vacuum space under the pump and can be used for (4) pumping, so that along (4) The pumping length of the baffle is uniform. For example, if there is only one vacuum pump on the chamber cover, 13 201137147 will have more efficiency in the middle of the pump baffle than at its end. Pumping. Thus, by projecting the edge of the baffle plate at some desired location, or in embodiments where the pump baffle is of a similar box-like configuration, by creating a perforation along the vertical side of the protrusion of the pump baffle, Available at Pumping is controlled on certain areas of the pump baffle. Thus, such settings may promote more uniform pumping. In another embodiment, the edge of the plate may protrude at an obtuse angle to the horizontal plane of the plate (forming an open class with an open top surface) Cup shape. In yet another embodiment, the edge of the plate may protrude perpendicular to the plane of the chamber cover, and then the top of the raised edge may be flared at an obtuse angle to the horizontal plane of the plate. In yet another embodiment The pump baffle 101 can be a curved plate having a concave side facing the cover. Other embodiments can be designed for different arrangements of the pump baffle 101 to prevent deposition of sputter material on the plutonium. As explained above, the pump baffle 101 covers a sufficient area under the chamber cover 103 such that there is no direct line of sight entering the pump raft from the end of the target, as indicated by the dashed line L in Figure 1A. The degree of protrusion between the pumping plate and the vacuum pump will depend at least on the number of vacuum pumps behind the sputtering cathode and the size of the sputtering cathode. The number of vacuum pumps will depend on the application (ie how much is needed) The size of the pump and the pump (for example, determined by diameter and pumping speed). The protruding structure between the pump baffle and the vacuum pump should provide sufficient obstacles to prevent the sputter material from falling over the pump. For example, in embodiments having only one vacuum pump and one long cathode, the longitudinally protruding structure may need to be larger than the horizontal protruding structure to avoid direct line of sight from any portion of the sputtering cathode to the vacuum pump inlet port. In addition, the process chamber operating pressure will determine the average free path of the gas atoms. Therefore, a large increase in operating pressure will change the mean free path, thus requiring different pump baffle sizes to achieve similar barrier effects. However, in glass deposition The difference in mean free path at the low pressure typically used during operation of the chamber should be minimal. 201137147 It should be noted that in an alternative embodiment of the invention, the cathode unit in a vertical position is such that the target material is laterally sputtered. To the extent) to the chamber wheel with the carrier system (eg forming a utility connection with the lower phase side wall). In this embodiment, the relative peak material and the baffle can be placed in the chamber as described above, and the pump baffle can be placed to be placed. Thus, a baffle plate for preventing condensate deposition in the deposit (4) is provided. The vertical structure between the protruding structure on the reading plate and the chamber cover where the '/ upper inlet 埠 is located is two. / The vacuum pump sputter atoms are scattered before entering the vacuum material and from:促使 = = = = = = = = = = = = = = = = = = = = 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管 尽管. The present invention will be described in detail with reference to the accompanying drawings. (d) It should be noted that the additional drawings are a two-part illustration: the embodiment, and therefore are not intended to be considered as limitations, the invention;; = an effective embodiment. The first view is the front view of the hairline-implementing chamber cover assembly and the pumping plate of the pumping baffle plate under the cavity-to-lid assembly and the pump baffle. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a longitudinal side elevational view of a chamber lid assembly and a pump baffle and a delivery device beneath the chamber lid assembly and the pump baffle in accordance with one embodiment of the present invention. 15 201137147 Figure 2 is a perspective view of the chamber cover and the pump baffle of one embodiment of the present invention as viewed from beneath the pump baffle. Figure 3 is a schematic illustration of a process chamber and a chamber cover and a pump baffle of an embodiment of the present invention placed thereon. It is contemplated that elements disclosed in one embodiment may be advantageously utilized in other embodiments without specific recitation. [Main component symbol description] 100 chamber cover assembly 101 pump plate 102 conveying device 103 chamber cover 104 cathode 105 cylindrical target 106 vacuum pump 107 cathode unit 108 end block 110 roller 111 〇 ring tire 113 Electric sprocket 114 drive belt 115 inlet 璋 120 panel 121 drive / drive loader 130 substrate 201 pump baffle 203 chamber cover 215 vacuum pump inlet 埠 300 chamber cover 301 vacuum pump baffle 306 vacuum pump 307 cathode Unit 308 End Block 311 Conveying Wheel 331 Water-Cooled Shield 332 Cover 333 Gas System 350 Process Chamber