CN104593735B - A kind of shielding construction for reaction chamber - Google Patents
A kind of shielding construction for reaction chamber Download PDFInfo
- Publication number
- CN104593735B CN104593735B CN201310533349.7A CN201310533349A CN104593735B CN 104593735 B CN104593735 B CN 104593735B CN 201310533349 A CN201310533349 A CN 201310533349A CN 104593735 B CN104593735 B CN 104593735B
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- CN
- China
- Prior art keywords
- barrier bed
- inwall
- block piece
- medium window
- breach
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Abstract
The present invention provides a kind of shielding construction for reaction chamber, wherein, reaction chamber includes medium window, shielding construction includes block piece and barrier bed, and barrier bed is arranged on the inwall of the medium window, and barrier bed includes at least one breach, so that barrier bed is discontinuous in the circumferential, block piece is arranged on the inwall of the medium window and in the breach, and block piece protrudes from the inwall of the medium window, and RF energy Transfer pipe is formed between block piece and barrier bed.The present invention can prevent sputtering particle or charged ion from bombarding the inwall of medium window, while the metal level that sputtering particle can be avoided to deposit produces closed circuit, and the particle contamination for avoiding sputtering particle from being caused after peeling off.Compared with prior art, the problem of dentation groove is closed is caused instant invention overcomes easy deposition sputtering particle in the dentation groove of shielding layer structure in the prior art, meanwhile, the requirement of machining accuracy is reduced, cost has been saved.
Description
Technical field
The present invention relates to semiconductor fabrication techniques, more particularly to a kind of shielding construction for reaction chamber.
Background technology
In semiconductor production field, PVD is carried out（Physical Vapor Deposition, physical vapour deposition (PVD)）When,
Generally use ICP（Inductively Coupled Plasma, inductively coupled plasma）Method excited in reaction chamber
Highdensity plasma, and by plasma bombardment sputtering source so that sputtering source sputters molecule, atom or ion and deposited
Film is formed on substrate.Generally, the inwall of medium window can be also bombarded when sputtering particle does random motion, in addition, for passing
The discharge coil of defeated RF energy, which is arranged between the plasma outside chamber and in reaction chamber, has capacitive coupling, can be further
Attract the inwall of high energy charged Ions Bombardment reaction chamber medium window, cause the service life of medium window to shorten.In addition, with ionization
Son or sputtering particle can also produce deposition or sputter when bombarding the inwall of medium window, if depositing closure on the inwall of medium window
Metal level, then can influence the coupling of RF energy, and hit the particle peeled off after the inwall of medium window can pollute, it is necessary to
Frequent clean, improves cost.
To solve the above problems, a screen layer, the screen layer would generally be set in the inwall of the medium window of reaction chamber
For reducing the bombardment of charged ion or sputtering particle to the inwall of medium window, it is to avoid produce deposition, the production of medium window surface is reduced
Raw sputtering, meanwhile, the screen layer can not produce influence to the transmission of RF energy.Fig. 1 be reaction chamber of the prior art and
The vertical section exemplary plot of screen layer, Fig. 2 is reaction chamber of the prior art and screen layer cross section exemplary plot, such as Fig. 1 and Fig. 2 institutes
Show, in the prior art, be provided with positioned at the inner side of the medium window 1 of the lower section of sputtering source 3 outside the screen layer 2 of annular, medium window 1
Side is provided with discharge coil 4, and screen layer 2 generally selects good conductor, and such as copper, aluminium is made, and it can avoid charged ion or sputtering
Particle hits the inwall of medium window 1, and as shown in Fig. 2 being provided with dentation groove 5 on screen layer 2, it is to avoid formation closed circuit
Influence the transmission of RF energy.
However, there are the following problems in actual applications for existing shielding layer structure：Screen layer processing difficulties, its sulcus fimbriodentatus
Precision is difficult to ensure that groove in production, is easily caused screen layer closure to produce larger circulation, is influenceed the transmission of RF energy；
During PVD, screen layer raises its temperature due to constantly being bombarded by charged ion, and then expands and cause
Destruction to medium window, or may expand and cause the presence of closed circuit, circulation influence RF energy transmission is produced, this
Outside, easily deposition sputtering particle causes dentation groove to close and produce close ring in the dentation groove of existing shielding layer structure
Road.
The content of the invention
In view of this, it is an object of the invention to provide a kind of shielding construction for reaction chamber, to overcome prior art
Easily deposition sputtering particle causes the problem of dentation groove is closed in the dentation groove of middle shielding layer structure.
To achieve the above object, the present invention provides a kind of shielding construction for reaction chamber, and the reaction chamber includes medium
Window, the shielding construction includes block piece and barrier bed, and the barrier bed is arranged on the inwall of the medium window, and the screening
Barrier includes at least one breach, so that the barrier bed is discontinuous in the circumferential, the block piece is arranged on the medium window
Inwall on and in the breach, and the block piece protrudes from the inwall of the medium window, the block piece with it is described
RF energy Transfer pipe is formed between barrier bed.
Preferably, the block piece covers the breach.
Preferably, the block piece includes occlusion part and connecting portion, and the occlusion part is fixedly connected with the connecting portion, institute
State connecting portion to be fixedly installed on the inwall of the medium window and in the breach, it is described that the occlusion part extends to covering
Barrier bed edge.
Preferably, the block piece is to be corresponded with the breach.
Preferably, central axis of the breach on the reaction chamber on the inwall wall of the medium window symmetrically divides
Cloth.
Preferably, the breach be 4, and 4 breach on the inwall of the medium window on the reaction chamber
Central axis be cruciform symmetry distribution.
Preferably, the material of the barrier bed and/or the block piece is metal good conductor.
Preferably, the barrier bed is sprayed on the inwall of the medium window by the metal good conductor and formed.
Preferably, the thickness of the barrier bed is 0.5-2mm.
Preferably, the barrier bed and the block piece surface are formed with raised and/or pit.
It can be seen that, the present invention by the shielding construction that is formed by block piece and barrier bed, effectively prevent sputtering particle or
Person's charged ion bombards the inwall of medium window, the formation of medium window inwall can be protected, simultaneously, it is to avoid sputtering particle is deposited
Metal level produce closed circuit, above-mentioned block piece and barrier bed can also adsorb the sputtering particle being splashed to thereon, it is to avoid
The particle contamination that sputtering particle is caused after peeling off.Compared with prior art, shielding construction of the invention is by block piece and barrier bed
Two independent part compositions, overcoming easy deposition sputtering particle in the dentation groove of shielding layer structure in the prior art causes
The problem of dentation groove is closed, reduces the requirement of machining accuracy, has saved cost, meanwhile, the present invention can be prevented effectively from existing
There is the problem of causing to produce closed circuit or cause the destruction to medium window after the shielding construction expanded by heating in technology.
Brief description of the drawings
Accompanying drawing is, for providing a further understanding of the present invention, and to constitute a part for specification, with following tool
Body embodiment is used to explain the present invention together, but is not construed as limiting the invention.In the accompanying drawings：
Fig. 1 is the vertical section exemplary plot of existing reaction chamber and screen layer；
Fig. 2 is the cross section exemplary plot of existing reaction chamber and screen layer；
Fig. 3 is the vertical section exemplary plot of the shielding construction provided by the present invention for reaction chamber；
Fig. 4 is the cross section exemplary plot of the shielding construction provided by the present invention for reaction chamber；
The block piece part exemplary plot that Fig. 5 provides for the present invention.
Description of reference numerals
1st, 10- medium windows；2- screen layers；3rd, 40- sputtering sources；4th, 50- discharge coils；5- dentation grooves；20- block pieces；
21- occlusion parts；22- connecting portions；30- barrier beds.
Embodiment
The embodiment of the present invention is described in detail below in conjunction with accompanying drawing.It should be appreciated that this place is retouched
The embodiment stated is merely to illustrate and explain the present invention, and is not intended to limit the invention.
The present invention provides a kind of shielding construction for reaction chamber, and the structure can be used in during PVD, prevent
The sputtering particle or charged ion that sputtering source is sputtered bombard the medium window of reaction chamber.It can react as shown in Figures 3 to 5
Chamber can include medium window 10, and above-mentioned shielding construction can include block piece 20 and barrier bed 30, wherein, barrier bed 30 can be set
Put on the inwall of medium window 10, and barrier bed 30 includes at least one breach so that barrier bed 30 is discontinuous in the circumferential, hides
Block piece 20 can be arranged on the inwall of medium window 10 and in the breach, block piece 20 can protrude from medium window 10
RF energy Transfer pipe is formed between inwall, and block piece 20 and barrier bed 30.
Specifically, barrier bed 30 can be set on the inwall of medium window 10, for avoiding what sputtering source 40 sputtered from splashing
Radion or charged ion bombard the inwall of medium window 10, meanwhile, to avoid the inwall formation closed circuit in medium window 10
The RF energy that influence discharge coil 50 is sent is sent in reaction chamber, and produces vortex, and influence discharge coil 50 magnetic field is simultaneously
RF energy is consumed, barrier bed 30 can include at least one breach, i.e. barrier bed 30 is in the inwall along circular medium window 10
It is discontinuous in circumference, can be with order to avoid sputtering particle or charged ion bombard the inwall of medium window 10 in above-mentioned indentation, there
Block piece 20, i.e. block piece 20 is set to be arranged on the inwall of medium window 10 on the inwall of the medium window 10 of above-mentioned indentation, there
Go up and be located in above-mentioned breach, to prevent sputtering particle or charged ion from bombarding the inwall of medium window 10 in indentation, there.In addition,
In order to avoid causing RF energy not to be transferred completely into reaction chamber in the inwall of medium window 10 formation closed circuit, block piece
RF energy Transfer pipe is could be formed between 20 and barrier bed 30, with the RF energy for enabling discharge coil 50 to send
It is sent in reaction chamber, i.e. RF energy Transfer pipe can be formed between block piece 20 and barrier bed 30 so that block piece
20 and barrier bed 30 do not form closed circuit in the circumference of the inwall of medium window 10.
With this, a shielding knot formed by block piece 20 and barrier bed 30 can be formed on the inwall of medium window 10
The inwall of medium window 10 can be completely covered in structure, specifically, the shielding construction, to cause inside reaction chamber between medium window 10
There is no straight length, so as to prevent sputtering particle or charged ion to bombard the inwall of medium window 10, medium window can be extended
10 service life, at the same time it can also be splashed to using block piece 20 and the absorption of barrier bed 30 on block piece 20 and barrier bed 30
Sputtering particle, it is to avoid sputtering particle causes particle to peel off the pollution to be formed after hitting, and above-mentioned shielding construction can be effective
Avoid the metal level formation closed circuit that sputtering particle is deposited after sputtering on block piece 20 and barrier bed 30.With prior art phase
Than the present invention is provided with single block piece 20 to block the breach of barrier bed 30, it is to avoid sputtering particle is deposited in technical process
To the indentation, there generation closed circuit of barrier bed 30, easily deposited in the dentation groove for overcoming shielding layer structure in the prior art
Sputtering particle causes the problem of dentation groove is closed.In addition, the shielding construction of the present invention is made up of block piece 20 and barrier bed 30,
Without manufacturing single part as blocking parts, compared with prior art, the requirement of machining accuracy is reduced, be easy to system
Make and install, reduce cost.
Further, block piece 20 can cover the breach on barrier bed 30, to block the medium window 10 of indentation, there
Inwall, prevents sputtering particle or charged ion from bombarding the inwall of medium window 10 from indentation, there.
Further, can be with as shown in figure 5, block piece 20 can include occlusion part 21 and connecting portion 22, occlusion part 21
It is fixedly connected with connecting portion 22, connecting portion 22 is fixedly installed on the inwall of medium window 10 and in above-mentioned breach, and is blocked
Portion 21 can cover the edge of barrier bed 30 along the circumferentially extending of medium window 10.Using said structure block piece 20 can be made complete
The above-mentioned breach of all standing, can effectively prevent sputtering particle or charged ion from bombarding the inwall of medium window 10 from indentation, there,
Specifically, can with as shown in figure 5, use the block piece 20 of T-type structure to cover above-mentioned breach, meanwhile, in block piece 20 and hide
Gap is formed between barrier 30 so that as RF energy Transfer pipe, block piece 20 can be fixed by screws in medium window 10
Inwall on, said structure can also avoid sputtering particle be splashed in RF energy Transfer pipe produce deposition.It is appreciated that
, the example above merely for example purpose, the present invention in block piece structure not limited to this, as long as above-mentioned breach can be covered
And can be with barrier bed formation RF energy Transfer pipe.
Further, block piece 20 can be corresponded with the breach on barrier bed 30, to cause each indentation, there
There is block piece 20 to be blocked, while RF energy Transfer pipe can be respectively formed in each indentation, there.
Further, the central axis that the breach on barrier bed 30 can be on the inwall of medium window 10 on reaction chamber
It is symmetrical, it can so make it that the RF energy Transfer pipe formed by block piece 20 and barrier bed 30 in each indentation, there is same
Sample is symmetrical on the central axis of reaction chamber, and the RF energy for enabling to discharge coil 50 to send uniformly is sent to instead
Intracavitary is answered, so as to further such that the plasma being excited is also more uniform.
Preferably, can be with as shown in figure 4,4 breach can be included on barrier bed 30, and 4 breach are in medium window
It can be distributed on 10 inwall on the central axis of reaction chamber in cruciform symmetry.With this, block piece 20, and block piece 20 with
Barrier bed 30 is distributed also with regard to the central axis of reaction chamber in cruciform symmetry.
Further, the material of block piece 20 and barrier bed 30 can be metal good conductor, specifically, can use with
The identical metal of sputtering source 40, or, the metal good conductor that the attribute with sputtering source 40 can be used to be closer to, which is made, to be blocked
Part 20 and barrier bed 30.Block piece 20 and barrier bed 30 are made using metal good conductor, block piece 20 and barrier bed is enabled to
30 are more prone to adsorb the sputtering particle being splashed to thereon, can be prevented effectively from after sputtering particle is peeled off and cause volume particle contamination,
Meanwhile, when sputtering particle is deposited on block piece 20 and barrier bed 30, the sedimentary formed also can be during PVD
It is relatively stable, it is to avoid again to peel off.It is understood that above are only the preferred embodiment of the present invention, hidden in the present invention
The material not limited to this of block piece and barrier bed.
Further, barrier bed 30 can be sprayed on the inwall of medium window 10 by metal good conductor and be formed.Tool
Body, metal good conductor is sprayed on to form barrier bed 30 on the inwall of medium window 10 by the method that can use pyrolytic coating,
The spraying method of metal is prior art, is not repeated excessively herein.Using the spraying method of metal can be relatively simple be situated between
Barrier bed 30 is formed on the inwall of matter window 10, without manufacturing single part as barrier bed 30, can further be simplified
The technological process of barrier bed 30 is processed, cost has been saved.It should be noted that in actual applications, can not also pre-set
Barrier bed 30, but block piece 20 is first set, sunk afterwards by sputtering particle during PVD on the inwall of medium window 10
The metal level that product goes out is used as barrier bed 30.
Further, the thickness of barrier bed 30 can be between 0.5-2mm.Specifically, it can use and control metal
Spraying method so that thickness is used as barrier bed 30 for 0.5-2mm metal level in spraying on the inwall of medium window.Using upper
Mode is stated, can make it that the structure of barrier bed 30 is relatively thin, thus during PVD, the thermal expansion amount of barrier bed 30 is smaller,
Avoid because expanded by heating causes barrier bed 30 to form closed circuit on the inwall of medium window 10 with block piece 20, meanwhile,
Compared with prior art, medium window is damaged after the expanded by heating of barrier bed 30 can be avoided.
Further, the surface of barrier bed 30 and block piece 20 could be formed with raised and/or pit, i.e. barrier bed
30 and block piece 20 surface can for roughening.Specifically, due to the metal coating table obtained using door metal spray-coating method
Face is roughening, therefore can form barrier bed 30 on the inwall of medium window 10 and cause barrier bed 30 naturally in spray metal
Surface roughening, it is also possible to the surface of block piece 20 using door metal spray-coating method spraying on metal coating, so as to block
The surface roughening of part 20.The surface roughening of barrier bed 30 and block piece 20 can more efficiently be adsorbed and be splashed to barrier bed
30 and block piece 20 on sputtering particle, it is to avoid sputtering particle peels off the particle contamination caused.
Above-mentioned is the description carried out to the shielding construction provided by the present invention for reaction chamber, it can be seen that the present invention
By the shielding construction formed by block piece and barrier bed, sputtering particle or charged ion bombardment medium window effectively prevent
Inwall, can to medium window inwall formation protect, meanwhile, above-mentioned block piece and barrier bed, which can also be adsorbed, to be splashed to thereon
Sputtering particle, it is to avoid the particle contamination that sputtering particle is caused after peeling off.Compared with prior art, shielding construction of the invention by
Easily deposited in block piece and the independent part composition of barrier bed two, the dentation groove for overcoming shielding layer structure in the prior art
Sputtering particle causes the problem of dentation groove is closed, and reduces the requirement of machining accuracy, has saved cost, meanwhile, energy of the present invention
Enough being prevented effectively from after shielding construction expanded by heating of the prior art causes to produce closed circuit or causes to break medium window
Bad the problem of.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, but the invention is not limited in this.For those skilled in the art, the essence of the present invention is not being departed from
In the case of refreshing and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (9)
1. a kind of shielding construction for reaction chamber, the reaction chamber includes medium window, it is characterised in that the shielding construction bag
Block piece and barrier bed are included, the barrier bed is arranged on the inwall of the medium window, and the barrier bed includes at least one
Breach, so that the barrier bed is discontinuous in the circumferential, the block piece is arranged on the inwall of the medium window and positioned at institute
State in breach, and the block piece protrudes from the inwall of the medium window, is formed between the block piece and the barrier bed
Gap is to be used as RF energy Transfer pipe；
The material of the barrier bed and the block piece is metal good conductor.
2. shielding construction according to claim 1, it is characterised in that the block piece covers the breach.
3. shielding construction according to claim 1, it is characterised in that the block piece includes occlusion part and connecting portion, institute
State occlusion part to be fixedly connected with the connecting portion, the connecting portion is fixedly installed on the inwall of the medium window and positioned at described
In breach, the occlusion part extends to the covering barrier bed edge.
4. shielding construction according to claim 1, it is characterised in that the block piece is to be corresponded with the breach.
5. shielding construction according to claim 4, it is characterised in that the breach is closed on the inwall wall of the medium window
It is symmetrical in the central axis of the reaction chamber.
6. shielding construction according to claim 5, it is characterised in that the breach is 4, and 4 breach are in institute
The central axis on the inwall of medium window on the reaction chamber is stated to be distributed for cruciform symmetry.
7. shielding construction according to claim 1, it is characterised in that the barrier bed is sprayed on by the metal good conductor
Formed on the inwall of the medium window.
8. shielding construction as claimed in any of claims 1 to 7, it is characterised in that the thickness of the barrier bed is
0.5-2mm。
9. shielding construction as claimed in any of claims 1 to 7, it is characterised in that the barrier bed and the screening
Barrier surface is formed with raised and/or pit.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533349.7A CN104593735B (en) | 2013-11-01 | 2013-11-01 | A kind of shielding construction for reaction chamber |
| TW103136864A TWI530576B (en) | 2013-11-01 | 2014-10-24 | A mask structure for the reaction chamber |
| KR1020167014590A KR20160079088A (en) | 2013-11-01 | 2014-10-28 | Shielding structure for reaction chamber |
| PCT/CN2014/089667 WO2015062469A1 (en) | 2013-11-01 | 2014-10-28 | Shielding structure for reaction chamber |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310533349.7A CN104593735B (en) | 2013-11-01 | 2013-11-01 | A kind of shielding construction for reaction chamber |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104593735A CN104593735A (en) | 2015-05-06 |
| CN104593735B true CN104593735B (en) | 2017-10-13 |
Family
ID=53003341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310533349.7A Active CN104593735B (en) | 2013-11-01 | 2013-11-01 | A kind of shielding construction for reaction chamber |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR20160079088A (en) |
| CN (1) | CN104593735B (en) |
| TW (1) | TWI530576B (en) |
| WO (1) | WO2015062469A1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108461372B (en) * | 2017-02-21 | 2020-03-31 | 北京北方华创微电子装备有限公司 | Dielectric window and plasma processing device |
| CN109801824B (en) * | 2017-11-15 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Dielectric window assembly and reaction chamber |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000124137A (en) * | 1998-10-13 | 2000-04-28 | Hitachi Ltd | Plasma processing apparatus |
| CN1610766A (en) * | 2002-03-06 | 2005-04-27 | 应用材料公司 | Unitary removable shield assembly |
| CN102418073A (en) * | 2010-09-27 | 2012-04-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering chamber, pre-cleaning chamber and plasma processing equipment |
| CN102465260A (en) * | 2010-11-17 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber assembly and semiconductor processing equipment with application of same |
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| US5234529A (en) * | 1991-10-10 | 1993-08-10 | Johnson Wayne L | Plasma generating apparatus employing capacitive shielding and process for using such apparatus |
| TW327236B (en) * | 1996-03-12 | 1998-02-21 | Varian Associates | Inductively coupled plasma reactor with faraday-sputter shield |
| JPH1018043A (en) * | 1996-07-03 | 1998-01-20 | Applied Materials Inc | Rf coil with slots for plasma vapor deposition system |
| WO2000003055A1 (en) * | 1998-07-13 | 2000-01-20 | Tokyo Electron Arizona, Inc. | Shield for ionized physical vapor deposition apparatus |
| CN1656243B (en) * | 2001-11-14 | 2010-06-16 | 应用材料有限公司 | Autoionizing inductive coupling plasma used for sputtering and re-sputtering |
| KR101001743B1 (en) * | 2003-11-17 | 2010-12-15 | 삼성전자주식회사 | Ionized physical vapor deposition apparatus using helical self-resonant coil |
| CN102543636B (en) * | 2010-12-27 | 2015-04-15 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Faraday shield and plasma processing equipment |
| US20130098871A1 (en) * | 2011-10-19 | 2013-04-25 | Fei Company | Internal Split Faraday Shield for an Inductively Coupled Plasma Source |
-
2013
- 2013-11-01 CN CN201310533349.7A patent/CN104593735B/en active Active
-
2014
- 2014-10-24 TW TW103136864A patent/TWI530576B/en active
- 2014-10-28 WO PCT/CN2014/089667 patent/WO2015062469A1/en active Application Filing
- 2014-10-28 KR KR1020167014590A patent/KR20160079088A/en active Search and Examination
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000124137A (en) * | 1998-10-13 | 2000-04-28 | Hitachi Ltd | Plasma processing apparatus |
| CN1610766A (en) * | 2002-03-06 | 2005-04-27 | 应用材料公司 | Unitary removable shield assembly |
| CN102418073A (en) * | 2010-09-27 | 2012-04-18 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering chamber, pre-cleaning chamber and plasma processing equipment |
| CN102465260A (en) * | 2010-11-17 | 2012-05-23 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Chamber assembly and semiconductor processing equipment with application of same |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104593735A (en) | 2015-05-06 |
| WO2015062469A1 (en) | 2015-05-07 |
| KR20160079088A (en) | 2016-07-05 |
| TW201518530A (en) | 2015-05-16 |
| TWI530576B (en) | 2016-04-21 |
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