TWM487487U - Capacitive fingerprint sensor with electrostatic protection - Google Patents
Capacitive fingerprint sensor with electrostatic protection Download PDFInfo
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- TWM487487U TWM487487U TW103207766U TW103207766U TWM487487U TW M487487 U TWM487487 U TW M487487U TW 103207766 U TW103207766 U TW 103207766U TW 103207766 U TW103207766 U TW 103207766U TW M487487 U TWM487487 U TW M487487U
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- 239000000758 substrate Substances 0.000 claims description 16
- 230000005611 electricity Effects 0.000 claims description 8
- 230000003068 static effect Effects 0.000 claims description 8
- 230000000694 effects Effects 0.000 description 5
- 230000005684 electric field Effects 0.000 description 5
- 238000002161 passivation Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 210000002615 epidermis Anatomy 0.000 description 1
- 230000002068 genetic effect Effects 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 210000003491 skin Anatomy 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
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Description
本新型為有關一種電容式指紋感測器,尤指一種具靜電防護的電容式指紋感測器。The present invention relates to a capacitive fingerprint sensor, and more particularly to a capacitive fingerprint sensor with electrostatic protection.
指紋為皮膚表皮上突起的紋路,並且每個人隨著遺傳特徵的不同,亦各自具有相異的指紋,使得紋指目前已廣泛使用於個人身份辨識時的一種生物特徵。 隨著半導體產業的蓬勃發展,利用半導體晶片所製成的電容式指紋感測器,已漸漸的應用於各式各樣的行動電子裝置上,以降低該行動電子裝置被盜用的風險。由於電容式指紋感測器之中的電容感測元件,其表面為了得以供一手指接觸以進行偵測,必須大面積的暴露於一外界,但是任何帶電的物體都有可能因產生靜電對該電容感測元件造成損壞,因此,使得該電容式指紋感測器之中的抗靜電結構愈來愈重要。 例如在中國發明專利公開第CN102682271號中,即揭示一種電容式指紋積體電路之靜電損害防護結構,包含有複數個感測板,形成感測板陣列以界定一感測區域;一第一鈍化層,覆蓋在該感測板上;一圖案化靜電損害防護金屬層,沉積在該第一鈍化層上並且具有一魚骨狀(fish-bone-like)結構;一共同導電層(common conductive layer),連接至該魚骨狀結構且在該感測區域上方圍繞,並用以將靜電電荷傳導至外界;一相關之信號處理電路,位於該感測板的下方,並且與該感測板電性連接;以及一第二鈍化層,介設在該感測板與該信號處理電路之間。據此,可保護該感測板以及該信號處理電路,避免受到靜電損害。 然而,上述的該靜電損害防護結構,該魚骨狀結構為朝一橫向延伸,使得其尖端所產生的電場集中效應,對於從表面往下產生的靜電,在引導上仍有改善的空間,而有改良的需求。Fingerprints are the lines of protrusion on the epidermis of the skin, and each person has different fingerprints according to different genetic characteristics, so that the finger has been widely used in a biometric feature in personal identification. With the rapid development of the semiconductor industry, capacitive fingerprint sensors made of semiconductor wafers have been gradually applied to a wide variety of mobile electronic devices to reduce the risk of theft of the mobile electronic device. Since the capacitive sensing element in the capacitive fingerprint sensor has a surface that is exposed to a finger for detection, it must be exposed to an outside world in a large area, but any charged object may be electrostatically generated. The capacitive sensing element causes damage, thus making the antistatic structure in the capacitive fingerprint sensor more and more important. For example, in the Chinese Patent Publication No. CN102682271, an electrostatic damage protection structure of a capacitive fingerprint integrated circuit is disclosed, which comprises a plurality of sensing plates, forming a sensing plate array to define a sensing region; a first passivation a layer overlying the sensing plate; a patterned electrostatic damage protective metal layer deposited on the first passivation layer and having a fish-bone-like structure; a common conductive layer Connected to the fishbone structure and surrounding the sensing region and used to conduct electrostatic charge to the outside; an associated signal processing circuit is located below the sensing plate and electrically connected to the sensing plate And a second passivation layer disposed between the sensing board and the signal processing circuit. Accordingly, the sensing board and the signal processing circuit can be protected from electrostatic damage. However, in the above-mentioned electrostatic damage protection structure, the fishbone structure extends laterally so that the electric field concentration effect generated by the tip thereof has an improved space for guiding static electricity generated from the surface, and there is Improved demand.
本新型的主要目的,在於解決習知的電容式指紋感測器,其靜電損害防護結構在對靜電的引導上,仍有不足的問題。 為達上述目的,本新型提供一種具靜電防護的電容式指紋感測器,包含有一感測基底、複數個電容感測板、一第一介電層、一第二介電層、一第三介電層以及一靜電防護結構。 該感測基底包含有一基板以及一設置於該基板上的感測電路;該電容感測板設置於該感測電路上並與該感測電路電性連接;該第一介電層設置於該電容感測板與該感測電路之間;該第二介電層設置於該第一介電層上而覆蓋該電容感測板;該第三介電層設置於該第二介電層上;而該靜電防護結構設置於該第三介電層之中,並包含有一導電網格以及複數個設置於該導電網格上的導電柱,該導電網格包含複數個位置對應該電容感測板的空格區域以及複數條相互交錯的格線,該導電柱設置於該格線上,包含有一底段以及一設置於該底段上的頂段,該頂段具有一小於該底段的頂段寬度。 據此,本新型藉由於該靜電防護結構設置該導電網格以及該導電柱,令該導電柱的該頂段具有小於該底段的該頂段寬度,使該導電柱能夠朝上針對一往下產生的靜電直接快速的進行引導,提高對一電場集中的效應,以增加對該電容感測板與該感測電路的保護。The main purpose of the novel is to solve the conventional capacitive fingerprint sensor, and the electrostatic damage protection structure still has insufficient problems in guiding the static electricity. To achieve the above objective, the present invention provides a capacitive fingerprint sensor with electrostatic protection, comprising a sensing substrate, a plurality of capacitive sensing plates, a first dielectric layer, a second dielectric layer, and a third A dielectric layer and an electrostatic protection structure. The sensing substrate includes a substrate and a sensing circuit disposed on the substrate; the capacitive sensing plate is disposed on the sensing circuit and electrically connected to the sensing circuit; the first dielectric layer is disposed on the Between the capacitive sensing plate and the sensing circuit; the second dielectric layer is disposed on the first dielectric layer to cover the capacitive sensing plate; the third dielectric layer is disposed on the second dielectric layer And the electrostatic protection structure is disposed in the third dielectric layer, and includes a conductive grid and a plurality of conductive pillars disposed on the conductive grid, the conductive grid comprising a plurality of positions corresponding to the capacitive sensing a space area of the board and a plurality of interlaced grid lines, wherein the conductive pillar is disposed on the grid line, and includes a bottom section and a top section disposed on the bottom section, the top section having a top section smaller than the bottom section width. According to the present invention, the conductive grid and the conductive pillar are disposed by the electrostatic protection structure, so that the top section of the conductive pillar has a width smaller than the top section of the bottom section, so that the conductive pillar can face upward The generated static electricity is directly and quickly guided to improve the effect on an electric field concentration to increase the protection of the capacitive sensing board and the sensing circuit.
有關本新型的詳細說明及技術內容,現就配合圖式說明如下: 請搭配參閱『圖1』至『圖3』所示,『圖1』為本新型一實施例的俯視示意圖,『圖2』為本新型一實施例導電柱的放大立體示意圖,『圖3』為圖1的局部剖面示意圖,如圖所示:本新型為一種具靜電防護的電容式指紋感測器,包含有一感測基底10、複數個電容感測板20、一第一介電層30、一第二介電層40、一第三介電層50以及一靜電防護結構60。 該感測基底10包含有一基板11以及一感測電路12,該基板11一般為使用一矽基板,該感測電路12為設置於該基板11上。該電容感測板20設置於該感測電路12上並與該感測電路12電性連接,該第一介電層30設置於該電容感測板20與該感測電路12之間,可由一般金屬間介電層(Inter metal dielectric,IMD)所使用的聚醯亞胺製成,其介電常數約介於2.8至3.2之間。在本實施例中,該電容感測板20包含有一貫穿該第一介電層30的連接線21,該電容感測板20為透過該連接線21與該感測電路12電性連接。 該第二介電層40設置於該第一介電層30上,而覆蓋該電容感測板20,該第二介電層40可由氮氧化矽(SiON)製成,其介電常數約介於6.4至6.8之間,厚度約為15μm至20μm,該第三介電層50設置於該第二介電層40上,亦可由聚醯亞胺製成,厚度約為3μm至4μm之間,該第三介電層50具有一供一手指接觸而遠離該第二介電層40的感測面51,另外,上述的該第一介電層30、該第二介電層40以及該第三介電層50,亦可為各種的鈍化層。 而該靜電防護結構60設置於該第三介電層50之中,為由金屬製成,在此實施例中,包含有一導電網格61、一導電環63以及複數個導電柱62。該導電網格61包含複數個空格區域611以及複數條格線612,該空格區域611的位置為對應該電容感測板20之上,該格線612彼此之間相互交錯,而圍繞出該空格區域611,該導電環63環繞於該導電網格61的一外圍,與該導電網格61電性連接並接地。 該導電柱62設置於該格線612交錯的一交錯處613上,包含有一底段621以及一頂段622,該底段621與該頂段622在此沿著該格線612,於一俯視方向形成一十字狀,但不以此為限制,亦可為圓形、方形、三角形等,該底段621約具有一介於4μm至6μm的底段寬度W3,以及一約為1μm的底段621高度,該頂段622設置於該底段621上,具有一小於該底段621的頂段寬度W2,該頂段寬度W2在此大約大於2μm,小於4μm,該頂段622的高度在此約為1μm。在本實施例中,該導電柱62還可進一步包含一尖端623,該尖端623設置於該頂段622上,具有一小於該頂段寬度W2的尖端寬度W1,約為1μm,該尖端623的高度約為1μm,要說明的是,上述該底段寬度W3、該頂段寬度W2與該尖端寬度W1的數值僅為舉例,並不以此為限制,主要精神在於該導電柱62的該尖端寬度W1小於該頂段寬度W2,該頂段寬度W2小於該底段寬度W3,使該導電柱62以該尖端623指向該感測面51。 如此一來,在本實施例中,當一手指或是一帶電物體靠近該感測面51時,由於該導電柱62的該底段621與該頂段622以及該尖端623,由下而上逐漸變窄,該尖端623更進一步指向該感測面51,令該尖端623所產生的一電場集中效應得以靠近該感測面51,如此可將從該感測面51以下於該第三介電層50中的電力線吸引至該尖端623,使該導電柱62具有較該空格區域611更大的電場強度,提高從該感測面51引導該靜電放電發生於該導電柱62的機率,一旦該靜電放電產生,該靜電即可立即從該尖端623開始引導,流至該頂段622、該底段621,再經該導電網格61導至該導電環63,最後從該接地導出,達到保護該電容感測板20與該感測電路12的效果。 再者,於本實施例中,由於該第三介電層50相較該第二介電層40具有一較低的介電常數,如此,當靜電放電於該第三介電層50發生時,可降低該靜電進一步往該第二介電層40流竄的機率,並且於正常進行指紋量測的情況下,該第二介電層40具有較高的介電常數還可以提高該電容感測板20至該感測面51之間的電容值,彌補該電容感測板20至該感測面51之間因距離增加所損失的電容值,提高感測的能力。 綜上所述,由於本新型藉由於該靜電防護結構設置該導電網格以及該導電柱,令該導電柱由下而上逐漸變窄,該尖端指向該感測面,使該尖端能夠朝上針對一往下產生的靜電直接快速的進行引導,提高對一電場集中的效應,以增加對該電容感測板與該感測電路的保護,再者,本新型還設置該第三介電層相較該第二介電層具有一較低的該介電常數,降低該靜電往該第二介電層流竄的機率,以保護該電容感測板與該感測電路,並且還可以彌補該電容感測板至該感測面之間因距離增加所損失的電容值,提高感測的能力,因此本新型極具進步性及符合申請新型專利的要件,爰依法提出申請,祈 鈞局早日賜准專利,實感德便。 以上已將本新型做一詳細說明,惟以上所述者,僅爲本新型的一較佳實施例而已,當不能限定本新型實施的範圍。即凡依本新型申請範圍所作的均等變化與修飾等,皆應仍屬本新型的專利涵蓋範圍內。The detailed description and technical content of the present invention will now be described as follows: Please refer to the "Figure 1" to "Figure 3", and Figure 1 is a top plan view of an embodiment of the present invention. 』 is a schematic enlarged perspective view of a conductive column according to an embodiment of the present invention, and FIG. 3 is a partial cross-sectional view of FIG. 1 , as shown in the figure: the present invention is a capacitive fingerprint sensor with electrostatic protection, including a sensing The substrate 10 , the plurality of capacitive sensing boards 20 , a first dielectric layer 30 , a second dielectric layer 40 , a third dielectric layer 50 , and an electrostatic protection structure 60 . The sensing substrate 10 includes a substrate 11 and a sensing circuit 12 . The substrate 11 is generally a substrate, and the sensing circuit 12 is disposed on the substrate 11 . The capacitive sensing board 20 is disposed on the sensing circuit 12 and electrically connected to the sensing circuit 12 . The first dielectric layer 30 is disposed between the capacitive sensing board 20 and the sensing circuit 12 . It is made of a polyimine used in an intermetallic dielectric (IMD), and has a dielectric constant of about 2.8 to 3.2. In this embodiment, the capacitive sensing board 20 includes a connecting line 21 extending through the first dielectric layer 30. The capacitive sensing board 20 is electrically connected to the sensing circuit 12 through the connecting line 21. The second dielectric layer 40 is disposed on the first dielectric layer 30 to cover the capacitive sensing plate 20. The second dielectric layer 40 can be made of cerium oxynitride (SiON), and the dielectric constant thereof is Between 6.4 and 6.8, the thickness is about 15 μm to 20 μm. The third dielectric layer 50 is disposed on the second dielectric layer 40, and can also be made of polyimide. The thickness is about 3 μm to 4 μm. The third dielectric layer 50 has a sensing surface 51 that is contacted by a finger and away from the second dielectric layer 40. In addition, the first dielectric layer 30, the second dielectric layer 40, and the first The three dielectric layers 50 can also be various passivation layers. The electrostatic protection structure 60 is disposed in the third dielectric layer 50 and is made of metal. In this embodiment, the conductive structure 61 includes a conductive mesh 61, a conductive ring 63, and a plurality of conductive pillars 62. The conductive grid 61 includes a plurality of space areas 611 and a plurality of grid lines 612. The spaces area 611 are located above the capacitive sensing board 20, and the grid lines 612 are interlaced with each other. In the region 611, the conductive ring 63 surrounds a periphery of the conductive mesh 61, and is electrically connected to the conductive mesh 61 and grounded. The conductive pillars 62 are disposed on a staggered intersection 613 of the ruled line 612, and include a bottom section 621 and a top section 622. The bottom section 621 and the top section 622 are along the grid line 612. The direction forms a cross shape, but is not limited thereto. It may also be a circle, a square, a triangle, etc., and the bottom section 621 has a bottom section width W3 of 4 μm to 6 μm and a bottom section 621 of about 1 μm. The top section 622 is disposed on the bottom section 621 and has a top section width W2 that is smaller than the bottom section 621. The top section width W2 is greater than about 2 μm and less than 4 μm. The height of the top section 622 is about this. It is 1 μm. In this embodiment, the conductive post 62 can further include a tip 623 disposed on the top segment 622 having a tip width W1 that is less than the top segment width W2, about 1 μm. The height is about 1 μm. It should be noted that the value of the width W3 of the bottom section, the width W2 of the top section, and the width W1 of the tip are only examples, and are not limited thereto. The main spirit lies in the tip of the conductive pillar 62. The width W1 is smaller than the top section width W2, and the top section width W2 is smaller than the bottom section width W3, so that the conductive post 62 is pointed by the tip 623 toward the sensing surface 51. In this embodiment, when a finger or a charged object approaches the sensing surface 51, the bottom section 621 of the conductive post 62 and the top section 622 and the tip 623 are bottom-up. Gradually narrowing, the tip 623 is further directed to the sensing surface 51, so that an electric field concentration effect generated by the tip 623 is brought close to the sensing surface 51, so that the sensing surface 51 is below the third surface. The power line in the electrical layer 50 is attracted to the tip 623 such that the conductive post 62 has a greater electric field strength than the space region 611, increasing the probability that the electrostatic discharge from the sensing surface 51 will occur at the conductive post 62. The electrostatic discharge is generated, and the static electricity can be immediately guided from the tip 623 to the top segment 622, the bottom segment 621, and then guided to the conductive ring 63 via the conductive mesh 61, and finally derived from the ground. The effect of the capacitive sensing board 20 and the sensing circuit 12 is protected. Furthermore, in this embodiment, since the third dielectric layer 50 has a lower dielectric constant than the second dielectric layer 40, when electrostatic discharge occurs in the third dielectric layer 50, The probability of the static electricity flowing further to the second dielectric layer 40 is reduced, and the second dielectric layer 40 has a higher dielectric constant and the capacitance sensing can be improved in the case of normal fingerprint measurement. The capacitance value between the board 20 and the sensing surface 51 compensates for the capacitance value lost between the capacitive sensing board 20 and the sensing surface 51 due to the increase in distance, thereby improving the sensing capability. In summary, since the present invention is provided with the conductive mesh and the conductive post by the electrostatic protection structure, the conductive post is gradually narrowed from bottom to top, and the tip is directed to the sensing surface so that the tip can face upward. Directly and rapidly guiding the static electricity generated downwards to improve the effect on an electric field concentration to increase the protection of the capacitive sensing board and the sensing circuit. Furthermore, the present invention also provides the third dielectric layer. Having a lower dielectric constant than the second dielectric layer reduces the probability of static electricity flowing to the second dielectric layer to protect the capacitive sensing plate and the sensing circuit, and can also compensate for The capacitance value lost between the capacitive sensing board and the sensing surface is increased by the distance, and the sensing capability is improved. Therefore, the novel is highly progressive and meets the requirements for applying for a new patent, and the application is made according to law, and the praying office is an early one. Granting a patent, it is really sensible. The present invention has been described in detail above, but the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited. That is, the equal changes and modifications made in accordance with the scope of this new application shall remain within the scope of the patent of this new type.
10‧‧‧感測基底
11‧‧‧基板
12‧‧‧感測電路
20‧‧‧電容感測板
21‧‧‧連接線
30‧‧‧第一介電層
40‧‧‧第二介電層
50‧‧‧第三介電層
51‧‧‧感測面
60‧‧‧靜電防護結構
61‧‧‧導電網格
611‧‧‧空格區域
612‧‧‧格線
613‧‧‧交錯處
62‧‧‧導電柱
621‧‧‧底段
622‧‧‧頂段
623‧‧‧尖端
63‧‧‧導電環
W1‧‧‧尖端寬度
W2‧‧‧頂段寬度
W3‧‧‧底段寬度10‧‧‧Sensing substrate
11‧‧‧Substrate
12‧‧‧Sensor circuit
20‧‧‧Capacitive sensing board
21‧‧‧Connecting line
30‧‧‧First dielectric layer
40‧‧‧Second dielectric layer
50‧‧‧ third dielectric layer
51‧‧‧Sense surface
60‧‧‧Electrostatic protection structure
61‧‧‧ Conductive grid
611‧‧‧Space area
612‧‧ ‧ grid
613‧‧‧Interlaced
62‧‧‧conductive column
621‧‧‧ bottom section
622‧‧‧ top section
623‧‧‧ tip
63‧‧‧ Conductive ring
W1‧‧‧ tip width
W2‧‧‧ top section width
W3‧‧‧ bottom width
圖1,為本新型一實施例的俯視示意圖。 圖2,為本新型一實施例導電柱的放大立體示意圖。 圖3,為圖1的局部剖面示意圖。FIG. 1 is a top plan view of an embodiment of the present invention. 2 is an enlarged perspective view of a conductive post according to an embodiment of the present invention. 3 is a partial cross-sectional view of FIG. 1.
611‧‧‧空格區域 611‧‧‧Space area
612‧‧‧格線 612‧‧ ‧ grid
613‧‧‧交錯處 613‧‧‧Interlaced
621‧‧‧底段 621‧‧‧ bottom section
622‧‧‧頂段 622‧‧‧ top section
623‧‧‧尖端 623‧‧‧ tip
W1‧‧‧尖端寬度 W1‧‧‧ tip width
W2‧‧‧頂段寬度 W2‧‧‧ top section width
W3‧‧‧底段寬度 W3‧‧‧ bottom width
Claims (12)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103207766U TWM487487U (en) | 2014-05-05 | 2014-05-05 | Capacitive fingerprint sensor with electrostatic protection |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW103207766U TWM487487U (en) | 2014-05-05 | 2014-05-05 | Capacitive fingerprint sensor with electrostatic protection |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TWM487487U true TWM487487U (en) | 2014-10-01 |
Family
ID=52108442
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103207766U TWM487487U (en) | 2014-05-05 | 2014-05-05 | Capacitive fingerprint sensor with electrostatic protection |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWM487487U (en) |
-
2014
- 2014-05-05 TW TW103207766U patent/TWM487487U/en not_active IP Right Cessation
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