TWM518367U - Capacitive fingerprint sensor with improved electrostatic protection - Google Patents

Capacitive fingerprint sensor with improved electrostatic protection Download PDF

Info

Publication number
TWM518367U
TWM518367U TW104215423U TW104215423U TWM518367U TW M518367 U TWM518367 U TW M518367U TW 104215423 U TW104215423 U TW 104215423U TW 104215423 U TW104215423 U TW 104215423U TW M518367 U TWM518367 U TW M518367U
Authority
TW
Taiwan
Prior art keywords
dielectric layer
sensing
electrostatic protection
capacitive
fingerprint sensor
Prior art date
Application number
TW104215423U
Other languages
Chinese (zh)
Inventor
Horng-Der Chang
Yen-Lung Chiu
Jung-Kuo Hsu
Hsin-Cheng Huang
Original Assignee
Samuel Sense Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samuel Sense Co Ltd filed Critical Samuel Sense Co Ltd
Priority to TW104215423U priority Critical patent/TWM518367U/en
Publication of TWM518367U publication Critical patent/TWM518367U/en

Links

Description

增強靜電防護之電容式指紋感測器Capacitive fingerprint sensor with enhanced electrostatic protection

本新型為有關一種電容式指紋感測器,尤指一種具靜電防護的電容式指紋感測器。The present invention relates to a capacitive fingerprint sensor, and more particularly to a capacitive fingerprint sensor with electrostatic protection.

指紋為皮膚表皮上不規則凹凸的紋路,並且每個人隨著遺傳特徵的不同,亦各自具有專屬自己的指紋,換句話說,指紋可作為個人身份的辨別生物特徵,使得指紋目前已廣泛使用於個人身份辨識。The fingerprint is the irregular concave and convex lines on the skin epidermis, and each person has its own fingerprint according to the different genetic characteristics. In other words, the fingerprint can be used as the identification biometric of the personal identity, so that the fingerprint is widely used at present. Personal identification.

隨著半導體產業的蓬勃發展,利用半導體晶片所製成的電容式指紋感測器,已漸漸的應用於各式各樣的行動電子裝置上,以降低該行動電子裝置被盜用的風險。由於電容式指紋感測器之中的電容感測元件,其表面為了得以供一手指接觸以進行偵測,必須大面積的暴露於一外界環境中,但是任何帶電的物體都有可能因產生靜電對該電容感測元件造成損壞,因此,使得該電容式指紋感測器之中的抗靜電結構愈來愈重要。With the rapid development of the semiconductor industry, capacitive fingerprint sensors made of semiconductor wafers have been gradually applied to a wide variety of mobile electronic devices to reduce the risk of theft of the mobile electronic device. Since the capacitive sensing element in the capacitive fingerprint sensor has a surface for contact with a finger for detection, it must be exposed to an external environment over a large area, but any charged object may generate static electricity. The capacitive sensing component is damaged, and therefore, the antistatic structure in the capacitive fingerprint sensor is becoming more and more important.

例如在中國新型專利公告第CN102682271號中,即揭示一種電容式指紋積體電路之靜電損害防護結構,包含有複數個感測板,形成感測板陣列以界定一感測區域;一第一鈍化層,覆蓋在該感測板上;一圖案化靜電損害防護金屬層,沉積在該第一鈍化層上並且具有一魚骨狀(fish-bone-like)結構;一共同導電層(common conductive layer),連接至該魚骨狀結構且在該感測區域上方圍繞,並用以將靜電電荷傳導至外界;一相關之信號處理電路,位於該感測板的下方,並且與該感測板電性連接;以及一第二鈍化層,介設在該感測板與該信號處理電路之間。據此,可保護該感測板以及該信號處理電路,避免受到靜電損害。For example, in the Chinese Patent Publication No. CN102682271, an electrostatic damage protection structure of a capacitive fingerprint integrated circuit is disclosed, which comprises a plurality of sensing plates, forming a sensing plate array to define a sensing region; a first passivation a layer overlying the sensing plate; a patterned electrostatic damage protective metal layer deposited on the first passivation layer and having a fish-bone-like structure; a common conductive layer Connected to the fishbone structure and surrounding the sensing region and used to conduct electrostatic charge to the outside; an associated signal processing circuit is located below the sensing plate and electrically connected to the sensing plate And a second passivation layer disposed between the sensing board and the signal processing circuit. Accordingly, the sensing board and the signal processing circuit can be protected from electrostatic damage.

然而,上述的該靜電損害防護結構,該魚骨狀結構為朝一橫向延伸,使得其尖端所產生的電場集中效應,對於從表面往下產生的靜電,仍有可能直接洩電至該感測板上,而造成積體電路的損害,其在引導上仍有改善的空間,而有改良的需求。However, in the above-mentioned electrostatic damage protection structure, the fishbone structure extends laterally so that the electric field concentration effect generated by the tip thereof may directly discharge electricity to the sensing plate for static electricity generated from the surface downward. On the other hand, the damage of the integrated circuit is caused, and there is still room for improvement in the guidance, and there is an improved demand.

本新型的主要目的,在於解決習知的電容式指紋感測器,其靜電損害防護結構在對靜電的引導上,仍有不足而造成積體電路可能會損壞的問題。The main purpose of the novel is to solve the problem of the conventional capacitive fingerprint sensor, in which the electrostatic damage protection structure is still insufficient in guiding the static electricity, which may cause damage to the integrated circuit.

為達上述目的,本新型提供一種具靜電防護的電容式指紋感測器,包含有一感測基底、複數個電容感測板、一第一介電層、一第二介電層、一第三介電層以及一靜電防護結構。To achieve the above objective, the present invention provides a capacitive fingerprint sensor with electrostatic protection, comprising a sensing substrate, a plurality of capacitive sensing plates, a first dielectric layer, a second dielectric layer, and a third A dielectric layer and an electrostatic protection structure.

該感測基底包含有一基板以及一設置於該基板上的感測電路;該電容感測板設置於該感測電路上並與該感測電路電性連接;該第一介電層設置於該電容感測板與該感測電路之間;該第二介電層設置於該第一介電層上而覆蓋該電容感測板;該第三介電層設置於該第二介電層上;而該靜電防護結構設置於該第三介電層且貫穿該第三介電層,該靜電防護結構包含有裸露在最上層的一導電網格,該導電網格包含複數個位置對應該電容感測板的空格區域以及複數條相互交錯的格線,且該導電網格貫穿該第三介電層。The sensing substrate includes a substrate and a sensing circuit disposed on the substrate; the capacitive sensing plate is disposed on the sensing circuit and electrically connected to the sensing circuit; the first dielectric layer is disposed on the Between the capacitive sensing plate and the sensing circuit; the second dielectric layer is disposed on the first dielectric layer to cover the capacitive sensing plate; the third dielectric layer is disposed on the second dielectric layer And the static electricity protection structure is disposed on the third dielectric layer and penetrates the third dielectric layer, the static electricity protection structure includes a conductive mesh exposed on the uppermost layer, the conductive mesh includes a plurality of positions corresponding to the capacitor A space area of the sensing board and a plurality of interlaced grid lines, and the conductive grid extends through the third dielectric layer.

據此,本新型藉由讓該靜電防護結構的該導電網格貫穿該第三介電層,讓該導電網格直接與人體接觸,因而該靜電防護結構所吸附的靜電可以經由手指洩掉,避免積體電路因靜電破壞而損壞,以增強靜電防護的效果。Accordingly, the present invention allows the conductive mesh to directly contact the human body by allowing the conductive mesh of the electrostatic protection structure to penetrate the third dielectric layer, so that the static electricity adsorbed by the electrostatic protection structure can be discharged through the finger. Avoid damage to the integrated circuit due to electrostatic damage to enhance the effect of static electricity protection.

有關本新型的詳細說明及技術內容,現就配合圖式說明如下:The detailed description and technical content of this new model are described below with the following diagram:

請搭配參閱『圖1』至『圖3』所示,『圖1』為本新型一實施例的剖面示意圖,『圖2』為本新型一實施例的俯視示意圖,『圖3』為本新型另一實施例的洩電示意圖,如圖所示:本新型為一種具靜電防護的電容式指紋感測器,包含有一感測基底10、複數個電容感測板20、一第一介電層30、一第二介電層40、一第三介電層50以及一靜電防護結構60。Please refer to FIG. 1 to FIG. 3, FIG. 1 is a schematic cross-sectional view showing an embodiment of the present invention, and FIG. 2 is a schematic plan view of the present invention. FIG. 3 is a schematic view of the present invention. A schematic diagram of the leakage of another embodiment, as shown in the figure: the present invention is a capacitive fingerprint sensor with electrostatic protection, comprising a sensing substrate 10, a plurality of capacitive sensing plates 20, and a first dielectric layer. 30. A second dielectric layer 40, a third dielectric layer 50, and an electrostatic protection structure 60.

該感測基底10包含有一基板11以及一感測電路12,該基板11一般為使用一矽基板,該感測電路12為設置於該基板11上。該電容感測板20設置於該感測電路12上並與該感測電路12電性連接,該第一介電層30設置於該電容感測板20與該感測電路12之間,可由一般金屬間介電層(Inter metal dielectric,IMD)所使用的聚醯亞胺製成,其介電常數約介於2.8至3.2之間。在本實施例中,該電容感測板20包含有一貫穿該第一介電層30的連接線21,該電容感測板20為透過該連接線21與該感測電路12電性連接。The sensing substrate 10 includes a substrate 11 and a sensing circuit 12 . The substrate 11 is generally a substrate, and the sensing circuit 12 is disposed on the substrate 11 . The capacitive sensing board 20 is disposed on the sensing circuit 12 and electrically connected to the sensing circuit 12 . The first dielectric layer 30 is disposed between the capacitive sensing board 20 and the sensing circuit 12 . It is made of a polyimine used in an intermetallic dielectric (IMD), and has a dielectric constant of about 2.8 to 3.2. In this embodiment, the capacitive sensing board 20 includes a connecting line 21 extending through the first dielectric layer 30. The capacitive sensing board 20 is electrically connected to the sensing circuit 12 through the connecting line 21.

該第二介電層40設置於該第一介電層30上,而覆蓋該電容感測板20,且該第二介電層具有一大於該第一介電層的介電常數,該第二介電層40可由氮氧化矽(SiON)製成,其介電常數約介於6.4至6.8之間,厚度約為15μm至20μm,該第三介電層50設置於該第二介電層40上,亦可由聚醯亞胺製成,厚度約為3μm至4μm之間,該第三介電層50具有一供一手指80接觸而遠離該第二介電層40的感測面51,另外,上述的該第一介電層30、該第二介電層40以及該第三介電層50,亦可為各種的鈍化層。The second dielectric layer 40 is disposed on the first dielectric layer 30 to cover the capacitive sensing plate 20, and the second dielectric layer has a dielectric constant greater than the first dielectric layer. The second dielectric layer 40 may be made of lanthanum oxynitride (SiON) having a dielectric constant of between about 6.4 and 6.8 and a thickness of about 15 μm to 20 μm. The third dielectric layer 50 is disposed on the second dielectric layer. 40, which may also be made of polyimide, having a thickness of about 3 μm to 4 μm. The third dielectric layer 50 has a sensing surface 51 for contacting a finger 80 away from the second dielectric layer 40. In addition, the first dielectric layer 30, the second dielectric layer 40, and the third dielectric layer 50 may be various passivation layers.

而該靜電防護結構60設置於該第三介電層50之中,為由金屬製成,在此實施例中,包含有裸露在最上層的一導電網格61與一導電環62。該導電網格61包含複數個空格區域611以及複數條格線612,該空格區域611的位置為對應該電容感測板20之上,該格線612彼此之間相互交錯,而圍繞出該空格區域611,該導電環62環繞於該導電網格61的一外圍,與該導電網格61電性連接並接地70,且該導電網格61貫穿該第三介電層50。The electrostatic protection structure 60 is disposed in the third dielectric layer 50 and is made of metal. In this embodiment, a conductive mesh 61 and a conductive ring 62 exposed on the uppermost layer are included. The conductive grid 61 includes a plurality of space areas 611 and a plurality of grid lines 612. The spaces area 611 are located above the capacitive sensing board 20, and the grid lines 612 are interlaced with each other. In the region 611, the conductive ring 62 surrounds a periphery of the conductive mesh 61, is electrically connected to the conductive mesh 61 and grounded 70, and the conductive mesh 61 extends through the third dielectric layer 50.

如此一來,當該手指80(如圖所繪製)或是一帶電物體靠近該感測面51時,會直接接觸該導電網格62,經由該導電網格62由該接地70 處洩掉,可避免靜電外洩至該電容感測板20,而造成積體電路的損壞,藉以增強靜電防護。In this way, when the finger 80 (as drawn) or a charged object approaches the sensing surface 51, the conductive mesh 62 is directly contacted, and the grounded wire 70 is discharged through the conductive mesh 62. It is possible to prevent static electricity from leaking to the capacitive sensing board 20, thereby causing damage to the integrated circuit, thereby enhancing electrostatic protection.

於本實施例中,由於該第三介電層50相較該第二介電層40具有一較低的介電常數,如此,當靜電放電於該第三介電層50發生時,可降低該靜電進一步往該第二介電層40流竄的機率,並且於正常進行指紋量測的情況下,該第二介電層40具有較高的介電常數還可以提高該電容感測板20至該感測面51之間的電容值,彌補該電容感測板20至該感測面51之間因距離增加所損失的電容值,提高感測的能力。In this embodiment, since the third dielectric layer 50 has a lower dielectric constant than the second dielectric layer 40, when the electrostatic discharge occurs in the third dielectric layer 50, it can be reduced. The probability of the static electricity flowing further to the second dielectric layer 40, and in the case of normal fingerprint measurement, the second dielectric layer 40 has a higher dielectric constant and the capacitive sensing plate 20 can be improved. The capacitance value between the sensing surfaces 51 compensates for the capacitance value lost between the capacitive sensing plate 20 and the sensing surface 51 due to the increase in distance, thereby improving the sensing capability.

綜上所述,本新型可以藉由讓該靜電防護結構的該導電網格貫穿該第三介電層,讓該導電網格直接與人體接觸,經由該導電網格由該接地 處洩掉,避免積體電路因靜電而損壞,以增強靜電防護。再者,本新型還設置該第三介電層相較該第二介電層具有一較低的介電常數,降低該靜電往該第二介電層流竄的機率,以保護該電容感測板與該感測電路,並且還可以彌補該電容感測板至該感測面之間因距離增加所損失的電容值,提高感測的能力,因此本新型極具進步性及符合申請新型專利的要件,爰依法提出申請,祈  鈞局早日賜准專利,實感德便。In summary, the present invention can allow the conductive mesh to directly contact the human body through the conductive mesh of the electrostatic protection structure, and the conductive mesh is discharged from the ground through the conductive mesh. Avoid damage to the integrated circuit due to static electricity to enhance static protection. Furthermore, the present invention further provides that the third dielectric layer has a lower dielectric constant than the second dielectric layer, reducing the probability of the static electricity flowing to the second dielectric layer to protect the capacitance sensing. The board and the sensing circuit can also compensate for the capacitance value lost by the distance between the capacitive sensing board and the sensing surface, and improve the sensing capability. Therefore, the present invention is highly advanced and conforms to the application for a new patent. The requirements of the 爰 提出 提出 提出 提出 提出 提出 提出 。 。 。 。 。 。 。 。 。 。 。 。 。 。

以上已將本新型做一詳細說明,惟以上所述者,僅爲本新型的一較佳實施例而已,當不能限定本新型實施的範圍。即凡依本新型申請範圍所作的均等變化與修飾等,皆應仍屬本新型的專利涵蓋範圍內。The present invention has been described in detail above, but the above is only a preferred embodiment of the present invention, and the scope of the present invention is not limited. That is, the equal changes and modifications made in accordance with the scope of this new application shall remain within the scope of the patent of this new type.

10‧‧‧感測基底
11‧‧‧基板
12‧‧‧感測電路
20‧‧‧電容感測板
21‧‧‧連接線
30‧‧‧第一介電層
40‧‧‧第二介電層
50‧‧‧第三介電層
51‧‧‧感測面
60‧‧‧靜電防護結構
61‧‧‧導電網格
611‧‧‧空格區域
612‧‧‧格線
62‧‧‧導電環
70‧‧‧接地
80‧‧‧手指
10‧‧‧Sensing substrate
11‧‧‧Substrate
12‧‧‧Sensor circuit
20‧‧‧Capacitive sensing board
21‧‧‧Connecting line
30‧‧‧First dielectric layer
40‧‧‧Second dielectric layer
50‧‧‧ third dielectric layer
51‧‧‧Sense surface
60‧‧‧Electrostatic protection structure
61‧‧‧ Conductive grid
611‧‧‧Space area
612‧‧ ‧ grid
62‧‧‧ Conductive ring
70‧‧‧ Grounding
80‧‧‧ fingers

圖1,為本新型一實施例的剖面示意圖。 圖2,為本新型一實施例的俯視示意圖。 圖3,為本新型一實施例的洩電示意圖。Figure 1 is a schematic cross-sectional view showing an embodiment of the present invention. 2 is a top plan view of an embodiment of the present invention. FIG. 3 is a schematic diagram of power leakage according to an embodiment of the present invention.

10‧‧‧感測基底 10‧‧‧Sensing substrate

11‧‧‧基板 11‧‧‧Substrate

12‧‧‧感測電路 12‧‧‧Sensor circuit

20‧‧‧電容感測板 20‧‧‧Capacitive sensing board

21‧‧‧連接線 21‧‧‧Connecting line

30‧‧‧第一介電層 30‧‧‧First dielectric layer

40‧‧‧第二介電層 40‧‧‧Second dielectric layer

50‧‧‧第三介電層 50‧‧‧ third dielectric layer

51‧‧‧感測面 51‧‧‧Sense surface

60‧‧‧靜電防護結構 60‧‧‧Electrostatic protection structure

61‧‧‧導電網格 61‧‧‧ Conductive grid

Claims (5)

一種增強靜電防護之電容式指紋感測器,包含有: 一感測基底,該感測基底包含有一基板以及一設置於該基板上的感測電路; 複數個設置於該感測電路上並與該感測電路電性連接的電容感測板; 一設置於該電容感測板與該感測電路之間的第一介電層; 一設置於該第一介電層上而覆蓋該電容感測板的第二介電層; 一設置於該第二介電層上的第三介電層;以及 一貫穿該第三介電層的靜電防護結構,該靜電防護結構包含有裸露在最上層的一導電網格,該導電網格包含複數個位置對應該電容感測板的空格區域以及複數條相互交錯圍繞出該空格區域的格線,且該導電網格貫穿該第三介電層。A capacitive fingerprint sensor for enhancing electrostatic protection, comprising: a sensing substrate, the sensing substrate comprises a substrate and a sensing circuit disposed on the substrate; a plurality of sensing circuits are disposed on the sensing circuit and a sensing circuit electrically connected to the sensing circuit; a first dielectric layer disposed between the capacitive sensing plate and the sensing circuit; a first dielectric layer disposed on the first dielectric layer to cover the capacitive a second dielectric layer of the test plate; a third dielectric layer disposed on the second dielectric layer; and an electrostatic protection structure extending through the third dielectric layer, the electrostatic protection structure including the exposed uppermost layer And a conductive grid comprising a plurality of locations corresponding to the space area of the capacitive sensing board and a plurality of grid lines interlaced around the space area, and the conductive grid extends through the third dielectric layer. 如申請專利範圍第1項所述的增強靜電防護之電容式指紋感測器,其中該靜電防護結構更包含一環繞該導電網格並與該導電網格電性連接且接地的導電環。The capacitive fingerprint sensor for enhancing electrostatic protection according to claim 1, wherein the electrostatic protection structure further comprises a conductive ring surrounding the conductive mesh and electrically connected to the conductive mesh and grounded. 如申請專利範圍第1項所述的增強靜電防護之電容式指紋感測器,其中該第二介電層具有一大於該第一介電層的介電常數。The capacitive fingerprint sensor for enhancing electrostatic protection according to claim 1, wherein the second dielectric layer has a dielectric constant greater than that of the first dielectric layer. 如申請專利範圍第1項所述的增強靜電防護之電容式指紋感測器,其中該第三介電層具有一小於該第二介電層的介電常數。The capacitive fingerprint sensor for enhancing electrostatic protection according to claim 1, wherein the third dielectric layer has a dielectric constant smaller than that of the second dielectric layer. 如申請專利範圍第1項所述的增強靜電防護之電容式指紋感測器,其中該電容感測板包含一貫穿該第一介電層而與該感測電路電性連接的連接線。The capacitive fingerprint sensor for enhancing electrostatic protection according to claim 1, wherein the capacitive sensing plate comprises a connecting line electrically connected to the sensing circuit through the first dielectric layer.
TW104215423U 2015-09-24 2015-09-24 Capacitive fingerprint sensor with improved electrostatic protection TWM518367U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW104215423U TWM518367U (en) 2015-09-24 2015-09-24 Capacitive fingerprint sensor with improved electrostatic protection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW104215423U TWM518367U (en) 2015-09-24 2015-09-24 Capacitive fingerprint sensor with improved electrostatic protection

Publications (1)

Publication Number Publication Date
TWM518367U true TWM518367U (en) 2016-03-01

Family

ID=56085899

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104215423U TWM518367U (en) 2015-09-24 2015-09-24 Capacitive fingerprint sensor with improved electrostatic protection

Country Status (1)

Country Link
TW (1) TWM518367U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI704485B (en) * 2019-09-27 2020-09-11 速博思股份有限公司 Fingerprint detection device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI704485B (en) * 2019-09-27 2020-09-11 速博思股份有限公司 Fingerprint detection device

Similar Documents

Publication Publication Date Title
JP6750059B2 (en) Capacitive fingerprint sensor with improved sensing element
US9563802B2 (en) Fingerprint identification chip with enhanced ESD protection
US10133907B2 (en) Fingerprint recognition chip packaging structure and packaging method
TWI486861B (en) Structure of finger sensing device of capacitive fingerprint recognition ic
US7961919B2 (en) Imaging device with sense and couple electrodes
KR101210474B1 (en) Intensified sensor array for static electricity
US20160171276A1 (en) Fingerprint Sensor Having ESD Protection Structure
US9600708B2 (en) Transparent fingerprint recognizing sensor array
CN103793114A (en) Capacitive sensing array device with high sensing sensitivity and electronic equipment
US20180102330A1 (en) Sensing chip package having esd protection and method making the same
TWM518367U (en) Capacitive fingerprint sensor with improved electrostatic protection
CN105205483B (en) Fingerprint sensing device
US20180025209A1 (en) Fingerprint identification apparatus
TWI533232B (en) Fingerprint sensor having esd protection structure
CN203882323U (en) A capacitive fingerprint sensor with an electrostatic protection structure
TWI621979B (en) Touch device with a fingerprint sensing element and electronic device with the same
JP5269111B2 (en) Electrostatic capacity detection type fingerprint reading sensor
CN103824071A (en) Electrostatic capacitance detecting type fingerprint reading sensor with electrostatic discharge function
TWI591544B (en) Fingerprint sensor having electrostatic discharge protection
US10121044B2 (en) Fingerprint sensor
TW201543375A (en) Capacitive sensing array device with high sensitivity and high frame rate and electronic apparatus using the same
TWM487487U (en) Capacitive fingerprint sensor with electrostatic protection
CN205068438U (en) Reinforcing electrostatic protection's capacitanc fingerprint sensor
CN203746092U (en) Electrostatic capacitance detection-type fingerprint reading sensor with electrostatic discharge function
TWI591768B (en) Package structure and method of fabrication

Legal Events

Date Code Title Description
MM4K Annulment or lapse of a utility model due to non-payment of fees