TWM466359U - Light emitting diode device - Google Patents

Light emitting diode device Download PDF

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Publication number
TWM466359U
TWM466359U TW102210452U TW102210452U TWM466359U TW M466359 U TWM466359 U TW M466359U TW 102210452 U TW102210452 U TW 102210452U TW 102210452 U TW102210452 U TW 102210452U TW M466359 U TWM466359 U TW M466359U
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Taiwan
Prior art keywords
electrode
layer
current blocking
blocking layer
diode device
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TW102210452U
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Chinese (zh)
Inventor
Min-Yen Tsai
Yen-Chih Chen
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Epistar Corp
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Priority to TW102210452U priority Critical patent/TWM466359U/en
Publication of TWM466359U publication Critical patent/TWM466359U/en

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Abstract

A light emitting diode device comprises a light-emitting stack, a first electrode, a second electrode, and a first current blocking layer. The first electrode is electrically connected to and formed on an upper surface of the light-emitting stack. The second electrode is formed on the upper surface, and the first electrode and the second electrode are electrically connected to two semiconductor layers having different conductivity types of the light-emitting stack. The first current blocking layer is formed on the upper surface of the light-emitting stack and under the first electrode. The first current blocking layer comprises a first end and a second end, respectively close to the first electrode and the second electrode. A width of the first current blocking layer is increased at a direction from the first end to the second end.

Description

發光二極體裝置Light-emitting diode device

本創作係提供一種發光二極體裝置,尤指一種具有較佳電流擴散性及發光均勻性的發光二極體裝置。The present invention provides a light-emitting diode device, especially a light-emitting diode device having better current diffusivity and uniformity of light emission.

隨著科技的進步,紅光、綠光及黃光發光二極體已具有相當高的亮度且已經量產,惟藍光發光二極體因磊晶技術和材料特性問題仍具發展瓶頸。With the advancement of technology, red, green and yellow light-emitting diodes have a relatively high brightness and have been mass-produced. However, blue light-emitting diodes still have bottlenecks due to epitaxial technology and material properties.

此外,傳統的水平式發光二極體的電流趨勢是走最短路徑的流動方式,而電流係從正電極流往負電極。通常而言,正電極的下方可選擇性設置電流阻擋層,並在電流阻擋層之外部包覆透明導電層。當電流經由透明導電層從正電極流向負電極時,可使得光線可從透明導電層穿射出來以提供照明光源。In addition, the current trend of the conventional horizontal light-emitting diode is the flow path of the shortest path, and the current flows from the positive electrode to the negative electrode. Generally, a current blocking layer is selectively disposed under the positive electrode, and a transparent conductive layer is coated on the outside of the current blocking layer. When current flows from the positive electrode to the negative electrode via the transparent conductive layer, light can be emitted from the transparent conductive layer to provide an illumination source.

然而,傳統的電流阻擋層容易造成行進電流在透明導電層中分佈不均勻,使光源集中在電極周圍,進而使發光二極體之發光效率不佳。因此,如何改善傳統發光二極體之電流分佈不均的缺點,即為現今相關照明產業的發展課題之一。However, the conventional current blocking layer is liable to cause uneven distribution of the traveling current in the transparent conductive layer, so that the light source is concentrated around the electrode, thereby making the light emitting efficiency of the light emitting diode poor. Therefore, how to improve the shortcoming of the current distribution of the conventional light-emitting diode is one of the development topics of the current related lighting industry.

上述發光二極體可更進一步的連接於其他元件以形成一發光裝置。發光二極體可藉由具有基板的那一側連接於一次載體上,或以焊 料或膠材形成於次載體與發光二極體間,以形成一發光裝置。此外,次載體可更包含一電路其透過例如為一金屬線的導電結構電性連接於發光二極體之電極。The above-described light emitting diode can be further connected to other elements to form a light emitting device. The light emitting diode can be connected to the primary carrier by the side having the substrate, or can be soldered A material or a glue is formed between the secondary carrier and the light emitting diode to form a light emitting device. In addition, the secondary carrier may further include a circuit electrically connected to the electrode of the light emitting diode through a conductive structure such as a metal wire.

本創作之申請專利範圍係揭露一種發光二極體裝置,其包含有:一發光疊層,具有一上表面;一第一電極,電性連接於發光疊層,且形成在上表面之上;一第二電極,形成在上表面之上,且第一電極與第二電極分別電性連接於發光疊層之不同電性的半導體層;及一第一電流阻擋層,形成在發光疊層之上表面且位於第一電極的下方,第一電流阻擋層具有一第一端和一第二端,第一端與第二端分別較靠近第一電極與第二電極,第一電流阻擋層之一寬度沿一由第一端往第二端漸增。The patent application scope of the present invention discloses a light emitting diode device comprising: a light emitting laminate having an upper surface; a first electrode electrically connected to the light emitting layer and formed on the upper surface; a second electrode is formed on the upper surface, and the first electrode and the second electrode are electrically connected to the different electrical semiconductor layers of the light emitting layer respectively; and a first current blocking layer is formed on the light emitting layer The upper surface is located below the first electrode, the first current blocking layer has a first end and a second end, and the first end and the second end are respectively closer to the first electrode and the second electrode, and the first current blocking layer is A width gradually increases from the first end to the second end.

10‧‧‧發光二極體裝置10‧‧‧Lighting diode device

12‧‧‧發光疊層12‧‧‧Lighting laminate

121‧‧‧上表面121‧‧‧ upper surface

14‧‧‧第一電極14‧‧‧First electrode

16‧‧‧第二電極16‧‧‧second electrode

18‧‧‧第一電流阻擋層18‧‧‧First current blocking layer

18a、18b、18c‧‧‧區段Sections 18a, 18b, 18c‧‧

181‧‧‧第一端181‧‧‧ first end

182‧‧‧第二端182‧‧‧ second end

20‧‧‧基板20‧‧‧Substrate

22‧‧‧延伸電極22‧‧‧Extended electrode

24‧‧‧透明導電層24‧‧‧Transparent conductive layer

26‧‧‧第二電流阻擋層26‧‧‧Second current blocking layer

28‧‧‧第一半導體層28‧‧‧First semiconductor layer

30‧‧‧發光層30‧‧‧Lighting layer

32‧‧‧第二半導體層32‧‧‧Second semiconductor layer

D1‧‧‧寬度方向D1‧‧‧width direction

D2‧‧‧預設方向D2‧‧‧Preset direction

A-A’‧‧‧剖面線A-A’‧‧‧ hatching

B-B’‧‧‧剖面線B-B’‧‧‧ hatching

C-C’‧‧‧剖面線C-C’‧‧‧ hatching

H1、H2、H3‧‧‧高度H1, H2, H3‧‧‧ height

W1、W2、W3、W4、W5‧‧‧寬度W1, W2, W3, W4, W5‧‧‧ width

第1圖為本創作實施例之發光二極體裝置之上視圖。Fig. 1 is a top view of the light-emitting diode device of the present embodiment.

第2圖為本創作實施例之發光二極體裝置沿第1圖之A-A’線的剖視圖。Fig. 2 is a cross-sectional view of the light-emitting diode device of the present embodiment taken along line A-A' of Fig. 1.

第3圖為本創作實施例之發光二極體裝置沿第1圖之B-B’線的剖視圖。Fig. 3 is a cross-sectional view of the light-emitting diode device of the present embodiment taken along line B-B' of Fig. 1.

第4圖為本創作實施例之發光二極體裝置沿第1圖之C-C’線的剖視圖。Fig. 4 is a cross-sectional view of the light-emitting diode device of the present embodiment taken along line C-C' of Fig. 1.

請參閱第1圖與第2圖,第1圖為本創作實施例之一發光二極體裝置10之上視圖,第2圖為本創作實施例之發光二極體裝置10沿第1圖之A-A’線的剖視圖。發光二極體裝置10包含有一發光疊層12、一第一電極14、 一第二電極16、一第一電流阻擋層18、一基板20、一延伸電極22、一透明導電層24以及一第二電流阻擋層26。發光疊層12具有一上表面121。第一電極14與第二電極16形成在上表面121的不同位置處,且第一電極14和第二電極16為正電極與負電極,分別電連接於發光疊層12的第一半導體層28及第二半導體層32。在本創作實施例中,第一半導體層28與第二半導體層32可以分別是p型半導體及n型半導體。Please refer to FIG. 1 and FIG. 2 . FIG. 1 is a top view of a light-emitting diode device 10 according to an embodiment of the present invention, and FIG. 2 is a second embodiment of the light-emitting diode device 10 according to the present embodiment. A cross-sectional view of the A-A' line. The light emitting diode device 10 includes a light emitting layer 12, a first electrode 14, A second electrode 16, a first current blocking layer 18, a substrate 20, an extension electrode 22, a transparent conductive layer 24, and a second current blocking layer 26. The light emitting laminate 12 has an upper surface 121. The first electrode 14 and the second electrode 16 are formed at different positions of the upper surface 121, and the first electrode 14 and the second electrode 16 are a positive electrode and a negative electrode, respectively electrically connected to the first semiconductor layer 28 of the light emitting laminate 12. And a second semiconductor layer 32. In the present embodiment, the first semiconductor layer 28 and the second semiconductor layer 32 may be a p-type semiconductor and an n-type semiconductor, respectively.

第一電流阻擋層18形成在發光疊層12之上表面121,且位於第一電極14的下方。第一電流阻擋層18具有相對的第一端181和第二端182,第一端181較靠近第一電極14,第二端182較靠近第二電極16。如第1圖所示,第一電流阻擋層18的寬度由第一端181往第二端182(預設方向D2)漸增,意即第一電流阻擋層18靠近第一端181的寬度W1會小於靠近第二端182的寬度W2。其中,預設方向D2實質相異於第一電流阻擋層18的寬度方向D1。The first current blocking layer 18 is formed on the upper surface 121 of the light emitting laminate 12 and is located below the first electrode 14. The first current blocking layer 18 has opposing first and second ends 181, 182, the first end 181 being closer to the first electrode 14, and the second end 182 being closer to the second electrode 16. As shown in FIG. 1, the width of the first current blocking layer 18 is gradually increased from the first end 181 to the second end 182 (preset direction D2), that is, the width W1 of the first current blocking layer 18 near the first end 181. It will be smaller than the width W2 near the second end 182. The preset direction D2 is substantially different from the width direction D1 of the first current blocking layer 18.

發光二極體裝置10之基板20通常使用藍寶石基板,乃因其具有較佳晶格匹配品質。發光疊層12係設置於基板20上。發光疊層12可包含有第一半導體層28、一發光層30以及一第二半導體層32。第一半導體層28與第二半導體層32分別帶有第一電性和第二電性,第一電極14和第二電極16係分別電性連接於第一半導體層28與第二半導體層32。如第1圖與第2圖所示,上表面121可包含第一半導體層28與第二半導體層32的裸露表面,且第二半導體層32之裸露表面的高度H2實質低於第一半導體層28之裸露表面的高度H1。The substrate 20 of the light-emitting diode device 10 typically uses a sapphire substrate because of its preferred lattice matching quality. The light emitting laminate 12 is disposed on the substrate 20. The light emitting laminate 12 can include a first semiconductor layer 28, a light emitting layer 30, and a second semiconductor layer 32. The first semiconductor layer 28 and the second semiconductor layer 32 respectively have a first electrical property and a second electrical property, and the first electrode 14 and the second electrode 16 are electrically connected to the first semiconductor layer 28 and the second semiconductor layer 32, respectively. . As shown in FIGS. 1 and 2, the upper surface 121 may include exposed surfaces of the first semiconductor layer 28 and the second semiconductor layer 32, and the height H2 of the exposed surface of the second semiconductor layer 32 is substantially lower than the first semiconductor layer. The height of the exposed surface of 28 is H1.

此外,延伸電極22連接於第一電極14。第一電流阻擋層18 係位於延伸電極22的正下方,且實質平行於延伸電極22。透明導電層24形成在發光疊層12上且包覆第一電流阻擋層18,而第一電極14則設置在透明導電層24上。第二電流阻擋層26為一選擇性元件,其設置於第一電極14之下方,且第二電流阻擋層26可選擇性連接或分離於第一電流阻擋層18。舉例來說,以第2圖所繪示的創作實施例為例,第二電流阻擋層26係一體連接於第一電流阻擋層18。Further, the extension electrode 22 is connected to the first electrode 14. First current blocking layer 18 It is located directly below the extension electrode 22 and substantially parallel to the extension electrode 22. A transparent conductive layer 24 is formed on the light emitting laminate 12 and covers the first current blocking layer 18, and the first electrode 14 is disposed on the transparent conductive layer 24. The second current blocking layer 26 is a selective element disposed under the first electrode 14 and the second current blocking layer 26 is selectively connectable or separated from the first current blocking layer 18. For example, taking the authoring embodiment illustrated in FIG. 2 as an example, the second current blocking layer 26 is integrally connected to the first current blocking layer 18.

如第1圖所示,第一電流阻擋層18可具有複數個區段,例如區段18a、18b及18c。相鄰區段的交界可為一階梯型結構。第一電流阻擋層18之複數個區段的寬度係由第一端181往第二端182依次漸增,所以區段18c的寬度W2可實質大於區段18b的寬度,區段18b的寬度又可實質大於區段18a的寬度W1。本創作之第一電流阻擋層18並不限於只可包含前述的二或三個兩區段,意即第一電流阻擋層18可包含四個以上的更多區段,故其實施態樣端視設計需求而定,於此不再詳說敘明。As shown in FIG. 1, the first current blocking layer 18 can have a plurality of segments, such as segments 18a, 18b, and 18c. The boundary of adjacent segments may be a stepped structure. The width of the plurality of segments of the first current blocking layer 18 is gradually increased from the first end 181 to the second end 182, so the width W2 of the segment 18c can be substantially greater than the width of the segment 18b, and the width of the segment 18b is It may be substantially larger than the width W1 of the segment 18a. The first current blocking layer 18 of the present invention is not limited to only including two or three of the foregoing two segments, that is, the first current blocking layer 18 may include more than four segments, so the implementation end thereof Depending on the design requirements, the details are not described here.

請參閱第1圖至第4圖,第3圖為本創作實施例之發光二極體裝置10沿第1圖之B-B’線的剖視圖,第4圖為本創作實施例之發光二極體裝置10沿第1圖之C-C’線的剖視圖。由於透明導電層24係包覆在第一電流阻擋層18的外部,因此透明導電層24之寬度W3可實質大於第一電流阻擋層18之寬度W4;並因為第一電流阻擋層18的寬度會沿著方向D2增寬,故透明導電層24位於第一電流阻擋層18之兩側沿寬度方向D1的截面寬度總合(寬度W3減去寬度W4的值)係由第一端181往第二端182漸減。再者,延伸電極22的結構寬度W5可保持常數,故第一電流阻擋層18相對延伸電極22之寬度比例(例如W1/W5相對於W2/W5)就由第一端181往第二端逐漸增加。電流阻擋層的 寬度實質可介於0~50毫米(μm),電流阻擋層的厚度(即如第3、4圖所繪示的高度H3)實質可介於200埃~10000埃(Å)。Please refer to FIG. 1 to FIG. 4 , FIG. 3 is a cross-sectional view of the LED device 10 of the present embodiment taken along line BB′ of FIG. 1 , and FIG. 4 is a schematic diagram of the light-emitting diode of the present embodiment. A cross-sectional view of the body device 10 taken along line CC' of Fig. 1. Since the transparent conductive layer 24 is coated on the outside of the first current blocking layer 18, the width W3 of the transparent conductive layer 24 may be substantially larger than the width W4 of the first current blocking layer 18; and because the width of the first current blocking layer 18 will Widening along the direction D2, the total width of the cross-sectional width of the transparent conductive layer 24 on both sides of the first current blocking layer 18 in the width direction D1 (the width W3 minus the value of the width W4) is from the first end 181 to the second End 182 is decreasing. Furthermore, the structure width W5 of the extension electrode 22 can be kept constant, so the ratio of the width of the first current blocking layer 18 to the extension electrode 22 (for example, W1/W5 with respect to W2/W5) gradually increases from the first end 181 to the second end. increase. Current blocking layer The width may be substantially between 0 and 50 millimeters (μm), and the thickness of the current blocking layer (ie, the height H3 as depicted in FIGS. 3 and 4) may be substantially between 200 angstroms and 10,000 angstroms (Å).

詳細來說,在發光二極體裝置10中,電流係由第一電極14流向第二電極16,在未作任何電流分散處理的情況下,電流無法均勻地分佈於發光二極體裝置10的的半導體層,因此發光二極體裝置10利用第一、第二電流阻擋層18、26的阻隔來控制電流路徑,以提供發光二極體裝置10較佳的電流擴散效能。在本創作中,第一電流阻擋層18可呈現階梯型結構,意即複數個區段之間的交界具有梯型段差,此結構特徵由第1圖可知。具體地,由於越接近第二電極16的區段18c具較大結構寬度,故電流不會過度累積在第二電極16周圍,此一設計使得發光二極體裝置10可有效分散電流。雖然本創作的第一電流阻擋層18沿著第一電極14往第二電極16之方向的寬度變化係以階梯型結構為例說明,然而,本創作第一電流阻擋層18的外輪廓另可設計為其他形式之曲線,例如第一電流阻擋層18可為一倒三角的錐形結構,或是第一電流阻擋層18的各區段可分別為具有不同曲率的弧形結構,凡具有各區段由第一電極14往第二電極16漸增寬度特徵的電流阻擋層,皆屬於本創作之設計範疇。In detail, in the light-emitting diode device 10, the current flows from the first electrode 14 to the second electrode 16, and the current cannot be uniformly distributed to the light-emitting diode device 10 without any current dispersion treatment. The semiconductor layer, and thus the light-emitting diode device 10 utilizes the barrier of the first and second current blocking layers 18, 26 to control the current path to provide better current spreading performance of the light-emitting diode device 10. In the present creation, the first current blocking layer 18 can assume a stepped structure, meaning that the boundary between the plurality of segments has a stepped step difference. This structural feature is known from FIG. Specifically, since the segment 18c closer to the second electrode 16 has a larger structural width, current does not excessively accumulate around the second electrode 16, and this design allows the light-emitting diode device 10 to effectively disperse current. Although the width variation of the first current blocking layer 18 of the present invention along the direction of the first electrode 14 to the second electrode 16 is exemplified by a stepped structure, the outer contour of the first current blocking layer 18 may be Designed as other forms of curves, for example, the first current blocking layer 18 may be an inverted triangular tapered structure, or the segments of the first current blocking layer 18 may be curved structures having different curvatures, respectively. The current blocking layer in which the segment is gradually increased in width from the first electrode 14 to the second electrode 16 belongs to the design of the present invention.

由先前技術可知,水平式發光二極體具有電流走兩電極間最短路徑的趨勢而導致發光效率低落,而本創作藉由改良電流阻擋層之結構,可使得電流進入發光疊層時儘量地均勻分佈在發光疊層之各區域,進而提升發光二極體裝置每瓦可產生之流明(Lm/W)的發光效能。It can be known from the prior art that the horizontal light-emitting diode has a tendency to conduct the shortest path between the two electrodes, resulting in low luminous efficiency, and the present invention can make the current into the light-emitting layer as uniform as possible by improving the structure of the current blocking layer. It is distributed in various areas of the light-emitting laminate, thereby improving the luminous efficiency (Lm/W) that can be generated per watt of the light-emitting diode device.

此外,本創作因電流可均勻地分布於發光二極體裝置中,因此可有效降低發光二極體裝置的內部電壓差,如此一來可避免發光二極體 裝置因為外部靜電效應而產生會損壞發光二極體裝置的瞬間高電流。換言之,本創作之設置具有階段性寬度變化的電流阻擋層還可提升發光二極體裝置的靜電防護特性。In addition, since the current can be evenly distributed in the light-emitting diode device, the internal voltage difference of the light-emitting diode device can be effectively reduced, thereby avoiding the light-emitting diode. The device generates an instantaneous high current that can damage the light-emitting diode device due to external electrostatic effects. In other words, the current blocking layer of the present invention having a step width variation can also enhance the electrostatic protection characteristics of the light emitting diode device.

以上所述僅為本創作之較佳實施例,凡依本創作申請專利範圍所做之均等變化與修飾,皆應屬本創作之涵蓋範圍。The above descriptions are only preferred embodiments of the present invention, and all changes and modifications made by the scope of the patent application of the present invention should be covered by the present invention.

10‧‧‧發光二極體裝置10‧‧‧Lighting diode device

121‧‧‧上表面121‧‧‧ upper surface

14‧‧‧第一電極14‧‧‧First electrode

16‧‧‧第二電極16‧‧‧second electrode

18‧‧‧第一電流阻擋層18‧‧‧First current blocking layer

18a、18b、18c‧‧‧區段Sections 18a, 18b, 18c‧‧

181‧‧‧第一端181‧‧‧ first end

182‧‧‧第二端182‧‧‧ second end

20‧‧‧基板20‧‧‧Substrate

26‧‧‧第二電流阻擋層26‧‧‧Second current blocking layer

D1‧‧‧寬度方向D1‧‧‧width direction

D2‧‧‧預設方向D2‧‧‧Preset direction

A-A’‧‧‧剖面線A-A’‧‧‧ hatching

B-B’‧‧‧剖面線B-B’‧‧‧ hatching

C-C’‧‧‧剖面線C-C’‧‧‧ hatching

W1、W2‧‧‧寬度W1, W2‧‧‧ width

Claims (10)

一種發光二極體裝置,其包含有:一發光疊層,具有一上表面;一第一電極,電性連接於該發光疊層,且形成在該上表面之上;一第二電極,形成在該上表面之上,且該第一電極與該第二電極分別電性連接於該發光疊層之不同電性的半導體層;及一第一電流阻擋層,形成在該發光疊層之該上表面且位於該第一電極的下方,該第一電流阻擋層具有一第一端和一第二端,該第一端與該第二端分別較靠近該第一電極與該第二電極,該第一電流阻擋層之一寬度沿一由該第一端往該第二端漸增。A light-emitting diode device comprising: a light-emitting layer having an upper surface; a first electrode electrically connected to the light-emitting layer and formed on the upper surface; and a second electrode formed Above the upper surface, the first electrode and the second electrode are electrically connected to different electrically conductive semiconductor layers of the light emitting layer, respectively; and a first current blocking layer is formed on the light emitting layer An upper surface of the first electrode and a second end, the first end and the second end are respectively closer to the first electrode and the second electrode, One width of the first current blocking layer is gradually increased from the first end to the second end. 如請求項1所述之發光二極體裝置,其另包含有:一基板,該發光疊層設置於該基板上。The illuminating diode device of claim 1, further comprising: a substrate, the illuminating laminate being disposed on the substrate. 如請求項1所述之發光二極體裝置,其中該發光疊層包含一第一半導體層、一發光層及一第二半導體層,該第一半導體層與該第二半導體層分別帶有一第一電性和一第二電性。The illuminating diode device of claim 1, wherein the illuminating layer comprises a first semiconductor layer, a luminescent layer and a second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer respectively have a first An electrical and a second electrical. 如請求項3所述之發光二極體裝置,其中該上表面包含該第一半導體層與該第二半導體層的裸露表面,且該第二半導體層之該裸露表面的高度實質低於該第一半導體層之該裸露表面的高度。The illuminating diode device of claim 3, wherein the upper surface comprises a exposed surface of the first semiconductor layer and the second semiconductor layer, and a height of the exposed surface of the second semiconductor layer is substantially lower than the first The height of the exposed surface of a semiconductor layer. 如請求項1所述之發光二極體裝置,其另包含有:一延伸電極,連接於該第一電極,該第一電流阻擋層位 於該延伸電極之正下方,且實質平行於該延伸電極。The illuminating diode device of claim 1, further comprising: an extension electrode connected to the first electrode, the first current blocking layer Directly below the extension electrode, and substantially parallel to the extension electrode. 如請求項1所述之發光二極體裝置,其另包含有:一透明導電層,形成在該發光疊層上且包覆該第一電流阻擋層,該第一電極設置於該透明導電層上。The light emitting diode device of claim 1, further comprising: a transparent conductive layer formed on the light emitting layer and covering the first current blocking layer, wherein the first electrode is disposed on the transparent conductive layer on. 如請求項1所述之發光二極體裝置,其另包含有:一第二電流阻擋層,設置於該第一電極之下方,該第二電流阻擋層連接或分離於該第一電流阻擋層。The illuminating diode device of claim 1, further comprising: a second current blocking layer disposed under the first electrode, the second current blocking layer being connected or separated from the first current blocking layer . 如請求項1所述之發光二極體裝置,其中該第一電流阻擋層具有複數個區段,且該相鄰區段之交界為一階梯型結構。The illuminating diode device of claim 1, wherein the first current blocking layer has a plurality of segments, and the boundary of the adjacent segments is a stepped structure. 如請求項1所述之發光二極體裝置,其中該第一電流阻擋層的寬度係由該第一端往該第二端漸增。The illuminating diode device of claim 1, wherein the width of the first current blocking layer is gradually increased from the first end to the second end. 如請求項5所述之發光二極體裝置,其中該第一電流阻擋層相對該延伸電極之一寬度比例由該第一端往該第二端漸增。The illuminating diode device of claim 5, wherein a width ratio of the first current blocking layer to the one of the extending electrodes is gradually increased from the first end to the second end.
TW102210452U 2013-06-03 2013-06-03 Light emitting diode device TWM466359U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI699906B (en) * 2015-01-16 2020-07-21 晶元光電股份有限公司 Semiconductor light-emitting device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI699906B (en) * 2015-01-16 2020-07-21 晶元光電股份有限公司 Semiconductor light-emitting device

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