M429055 * 101年03月19日梭正替換頁 五、新型說明： 【新型所屬之技術領域】 [0001] 本創作係有關於一種光源模組，尤指一種利用紫外光發 光二極體晶片作為發光源之光源模組。 【先前技術】 [0002] 紫外（ultravi〇let，uv)光為一種電磁輻射其波長比 可見光短’為10〜400奈米（nm)，目前多應用於乾燥固 化（curing)及微影（lith0訂aphy)等領域，例如：利用 紫外光照射以縮短印刷油墨乾燥的時間、使紫外線固化 樹脂硬化以及光阻曝光。 [0003] 傳統多使用高壓水銀燈（或稱汞燈）以產生紫外光，然而 水銀燈具有耗«高及點亮時料產生高溫等缺點y、加 上水銀燈具有毒性，因而逐漸地被具有耗電量小、不含 汞及使用壽命長的發光二極體所取代。 [0004] 配合參閲第一圖，為習知之紫外光發 尤赞先二極體光源模組 • 之局部剖視圖。該紫外光發光二極體光源· 5()包含一 «路板510、複數發光二極體52G及—透先罩體53〇，該 電路板510較佳地為印刷電路板（iM429055 * On March 19, 101, Shuttle is replacing page 5. New description: [New technical field] [0001] This creation is about a light source module, especially a light-emitting diode chip as a light source. Source light source module. [Prior Art] [0002] Ultraviolet (uv) light is an electromagnetic radiation whose wavelength is shorter than visible light '10 to 400 nanometers (nm), and is currently used for drying and lithography (lith0). For a field such as aphy), for example, irradiation with ultraviolet light is used to shorten the drying time of the printing ink, harden the ultraviolet curing resin, and expose the photoresist. [0003] Traditionally, high-pressure mercury lamps (or mercury lamps) are often used to generate ultraviolet light. However, mercury lamps have disadvantages such as high consumption and high temperature during lighting, and the mercury lamps are toxic, and thus are gradually consumed. Replaced by small, mercury-free and long-life LEDs. [0004] Referring to the first figure, it is a partial cross-sectional view of a conventional ultraviolet light-emitting Essence diode light source module. The ultraviolet light emitting diode light source 5() comprises a road board 510, a plurality of light emitting diodes 52G and a transparent cover body 53. The circuit board 510 is preferably a printed circuit board (i)
Led circuit b〇am，P⑻且其上預先形成有複數電路佈線（未圖示）及 焊墊（未圖示）。 陶料發光二極體52〇設置於該電魏51()並電連接於該電 路板51G，各該發光二極體52G包含-封裝座體522、二 導電支架524、至少-發光二極體晶片咖及一光學透鏡 528，該封裝座體522使用絕緣材料製作而成並具有一容 第3頁/共22頁 10〇22515产單編號 A0101 1013103892-0 M429055 101年.03月19日俊正替換頁 置槽523該等導電支架524之—端係貫穿該封裝座體 522並位於該谷置槽523，另一端係自該封裝座體⑽外 側翻轉至該封裝座體522底面，用以與該電路板形成 電性連接。該發光二極體晶片526設置於該容置槽奶， 並通過複數導線527電連接於該等導電支架524，其中該 發光二極體520可以包含一個或多個發光二極體晶片⑽ ，於此僅以一個為例說明》 [0006] 該光學透鏡528可以為膠體，如環氧樹脂（ep〇xy)或矽樹 脂（silicon)，並填充於該容置槽523以包覆該等導線 馨 527及s玄發光二極體晶片526 ;再者，該光學透鏡528具 有一外凸弧面，藉以擴大通過之光線的折射角度。 [0007] 该封裝座體522雖然可以有效地提升該發光二極體52〇的 絕緣性，但卻使得該發光二極體52〇的散熱效果差，致使 β玄發光一極體晶片526的發光效率及使用壽命降低；加上 該等發光二極體520必須包含封裝座體522及光學透鏡 528 ’使得整體的體積大，使得相鄰的二發光二極體52〇 ^ 之間的排列距離d大’亦即該等發光二極體520無法達到 緊密排列，進而使得該紫外光發光二極體光源模組5〇的 光均勻度差。再者，環氧樹脂或矽樹脂製成之光學透鏡 528於吸收紫外光後，會逐漸地劣化變黃，使得該紫外光 發光二極體光源模组50的光穿透率差並產生色偏。 [0008] 此外’該透光罩體530與該等發光二極體晶片526之間的 設置距離h係大大的影響該紫外光發光二極體光源模組50 的光均勻度；當該透光罩體530距離該等發光二極體晶片 526近，雖然可以有效地提升投射至該透光罩體530之光 麵2515户單编號A〇101 第4頁/共22頁 1013103892-0 M429055 , 1〇ί年.03月19日梭正替換頁 線的輻射照度，但卻使得光均勻度差；若提高該透光罩 體530與該發光二極體晶片526之間的設置距離h，雖然可 以使該紫外光發光二極體光源模組50的光均勻度提升， 但卻使得輻射照度減弱，並可能致使該紫外光發光二極. 體光源模組50無法符合乾燥、固化及微影之需求。 【新型内容】 [0009] 鑒於先前技術所述，本創作之一目的，在於提供一種光 源模組，可以有效地降低整體高度以提供輻射照度並產 生一均勻出光面。 [0010] 為達上述目的，本創作提供一種光源模組，該光源模組 包含一散熱基板、複數發光二極體晶片及一熱交換機構 ，該散熱基板具有一電路層，該等發光二極體晶片直接 地排列於該散熱基板之一側並電連接於該電路層，該等 發光二極體晶片的發光波段為220〜450奈米，該熱交換機 構設置於該散熱基板之另一側。 [0011] 本創作之該等發光二極體晶片係直接地設置於該散熱基 板上，藉此可以降低相鄰之兩發光二極體晶片的排列距 離，以提升該光源模組的出光均勻度；再者，可以降低 透光罩體與該發光二極體晶片之間的設置距離，使該光 源模組的整體高度降低並提升該光源模組的輻射照度， 以適用於乾燥、固化及微影之需求。 【實施方式】 [0012] 以下將以圖示及詳細說明清楚說明本創作之精神，如熟 悉此技術之人員在瞭解本創作之實施例後，當可由本創 作所教示之技術，加以改變及修飾，其並不脫離本創作 1002251#單編號删1 第5頁/共22頁 1013103892-0 M429055 1Q1年03月19日修正替&頁 之精神與範圍。 [0013] 一般而言，發光二極體晶片（1 ight emitting diode chip，或稱發光二極體晶粒），是指於一單晶片（如：藍寶 石基板）上通過蟲晶成長法做成之县晶片’於形成金屬電 極後再行切割而成之複數單元，並且各個切割而得知各 個單元可以獨立發光。 [0014] 配合參閱第二圖、第三圖及第四圖，分別為本創作第一 實施例之光源模組之立體分解圖、組合圖及剖視圖。該 光源模組10係供設置於乾燥機、固化機或曝光機，並朝 向照射物投射光線，該照射物係對應設置有光源模組10 專用之油墨、（樹脂）膠材及光阻，該光源模組10主要用 以提升油墨的乾燥速度、使（樹脂）膠材固化以及於光阻 上形成對應光罩之圖案。該光源模組10包含一散熱基板 110、複數發光二極體晶片120、一透光罩體130及一熱 交換機構140。 [0015] 該散熱基板110大致呈矩形，但不以此為限。該散熱基板 110為具有高熱傳導性之基板，其可以使用銅、鋁等金屬 、複合性金屬或陶瓷等低熱阻材料製成，並且該散熱基 板110的其中之一·表面111形成有一電路層112，該電路 層112可以為銀漿線路或銅箔線路。於本實施例中，該電 路層112形成於該散熱基板110的上表面。 [0016] 該等發光二極體晶片120的發光波段為220~450奈米（nm) ，為紫外光；該等發光二極體晶片120之發光角度0(如 第五圖所示）為90~120度，且可以為單波長發光二極體晶 片或多波長發光二極體晶片。該等發光二極體晶片120直 10022515^單编號 AG1()1 ^ 6 1 / * 22 I 1013103892-0 Μ429055 · • 101:年.03月19日修正替換頁 接地排列於該散熱基板110之一側並電連接於該電路層 11.2 ’藉此該散熱基板11〇可以快速地導離該等發光二極 體晶片120點亮時產生的熱能，避免該等發光二極體晶片 120的结面溫度（junction temperature)上升而導致 整體發光效率降低；再者，可以提升相鄰之二發光二極 體晶片120的排列距離D(如第五圖所示），藉以提升該光 源模組1 0單位面積的輕射照度。於本實施例中，該等發 光二極體晶片1 2 0以2 5 6個為例，且排列為正方形，實際 實施時則不以此為限。 [0017] 值得一提的是’假使在不改變該光源模組1〇之輻射照度 的情況下，該等發光二極體晶片120的排列密度提升，就 可以降低各該發光二極體晶片120的輻射照度，如此一來 ，可以有效地降低整體成本支出。 [0018] • 再者’該等發光二極體晶片120係通過複數導線19〇電連 / 接於該電路層112(如第六圖a、b所示）。其中，水平式發 光二極體晶片（如第六圖a所示）120係通過二導線190以 電連接該發光二極體晶片120之電極121與該電路層112 ;垂直式發光二極體晶片120之其中一電極121係直接地 電連接於該電路層112，另一電極121則通過一導線19〇 以電連接於該電路層112。 [0019] 復參閱第一圖及第四圖，該透光罩體130撐立於該散熱基 板110設置有該等發光二極體晶片120之一側並罩合該等 發光二極體晶片120，藉此可以降低該透光罩體13〇與該 等發光二極體晶片120之間的設置高度Η(如第五圖所示） ’並可以提升該光源模組10的輻射照度β 10〇2约15产單編號A01〇l 第7頁/共22頁 1013103892-0 M429055 101年.03月19日按正_頁 [0020] 該透光罩體130使用透光材質製成，於本實施例中，該透 光罩體130使用石英材質製成，藉以提升紫外光之穿透率 ，並可避免如習知之使用環氧樹脂（ep0Xy)或矽樹脂 (silicon)因吸收紫外光而產生劣化及光衰的情形產生 。再者’該透光罩體130可依光線穿透率的不同而呈透明 狀、半透明狀或霧面狀，其中，呈霧面狀之透光罩體丨3〇 可以更有效地提升該光源模組10投射至照射物之光線的 均勻度。又，該透光罩體130於鄰近於該發光二極體晶片 120之一表面131更包含一抗紅外線（anti - i nf rared)鍵 膜132 ’藉以濾除紅外線成份；於本實施例中，該抗紅外 線鍍膜132以設置於該透光罩體130之内表面為例。 [0021] 該熱交換機構140設置於該散熱基板11〇之相反設置該等 發光二極體晶片120之一侧，用以加速導離該等發光二極 體晶片120點亮時產生的熱能。於本實施例中，該熱交換 機構140以風扇為例’於實際實施時，該熱交換機構140 可以提供為散熱鋒片、熱管或均溫板（vapor chamber) [0022] 該光源模組10更包含一座體150、一固定框160及複數固 定件170，該座體150具有複數固定礼152，該固定框160 具有複數對應該等固定孔152之穿孔162，該等固定件 170貫穿該等穿孔162並固接於該等固定孔152 ;於本實 施例中，該等固定扎152、該等穿孔162及該等固定件 170分別以4個為例，但不以此為限。該固定框160用以將 該透光罩體130固定於該座體150上，且該座體150與該 透光罩體130配合界定一容置空間180，該散熱基板11〇 10022515^^號 A0101 第8頁/共22頁 1013103892-0 M429055 101年.03月19日按正替si頁 、該等發光二極體晶片120及該熱交換機構140設置於該 容置空間180。再者，該座體150更包含複數散熱孔154 ，用以供與外界空氣對流，以達到較佳的散熱效果。 [0023] 配合參閱第七圖，為本創作第二實施例之光源稹組之上 視圖。本實施例之光源模組10a大致與上述第一實施例相 同，其不同之處在於該等發光二極體晶片120a ;於本實 施例中，該等發光二極體晶片120a以30個為例，且其發 光波段可以為36511111、38511111或39511111，但不以此為限。 再者，相鄰之兩列沿著一第一軸向（如X軸）排列之發光二 極體晶片120a係於一垂直於該第一軸向之第二軸向（如Y 軸）呈錯位設置，且通過該等發光二極體晶片120a之發光 角度Φ以調整相鄰之二發光二極體晶片120a的排列距離D 以達到光線互補的效果，以該光源模組l〇a達到均勻輻射 照度的效果。Led circuit b〇am, P (8) and a plurality of circuit wirings (not shown) and pads (not shown) are formed in advance. The ceramic light-emitting diode 52 is disposed on the electrical circuit 51 () and electrically connected to the circuit board 51G. Each of the light-emitting diodes 52G includes a package body 522, two conductive supports 524, and at least a light-emitting diode. A chip coffee and an optical lens 528, the package body 522 is made of an insulating material and has a capacity page 3 / total 22 pages 10 〇 22515 production order number A0101 1013103892-0 M429055 101 years. March 19th Jun Jun replacement The bottom of the conductive bracket 523 extends through the package body 522 and is located in the valley slot 523, and the other end is flipped from the outside of the package body (10) to the bottom surface of the package body 522 for The circuit board forms an electrical connection. The LED chip 526 is disposed in the receiving slot milk and electrically connected to the conductive brackets 524 through a plurality of wires 527. The LEDs 520 may include one or more LED chips (10). The optical lens 528 can be a colloid, such as an epoxy resin (ep〇xy) or a silicon resin, and is filled in the accommodating groove 523 to cover the wires. 527 and s sinusoidal diode wafer 526; further, the optical lens 528 has a convex arcuate surface to expand the angle of refraction of the passing light. [0007] Although the package body 522 can effectively improve the insulation of the light-emitting diode 52, the heat dissipation effect of the light-emitting diode 52 is poor, and the light emission of the β-light-emitting diode 526 is caused. The efficiency and the service life are reduced; and the light-emitting diodes 520 must include the package body 522 and the optical lens 528' such that the overall volume is large, so that the arrangement distance d between the adjacent two-light-emitting diodes 52〇^ That is, the light-emitting diodes 520 cannot be closely arranged, and the light uniformity of the ultraviolet light-emitting diode light source module 5 is poor. In addition, the optical lens 528 made of epoxy resin or enamel resin gradually deteriorates and turns yellow after absorbing ultraviolet light, so that the light transmittance of the ultraviolet light-emitting diode light source module 50 is poor and color shift occurs. . [0008] In addition, the installation distance h between the transparent cover 530 and the LED arrays 526 greatly affects the light uniformity of the ultraviolet light emitting diode module 50; The cover body 530 is close to the light-emitting diode chips 526, although the light surface 2515 projected to the light-transmitting cover body 530 can be effectively lifted, and the household order number A 〇 101 page 4 / total 22 pages 1013103892-0 M429055, 1〇ί年. On March 19th, the shuttle is replacing the irradiance of the page line, but the light uniformity is poor; if the distance h between the transparent cover 530 and the LED array 526 is increased, although The light uniformity of the ultraviolet light emitting diode light source module 50 can be improved, but the irradiance is weakened, and the ultraviolet light emitting diode can be caused. The body light source module 50 cannot meet the requirements of drying, curing and lithography. demand. [New Content] [0009] In view of the prior art, it is an object of the present invention to provide a light source module that can effectively reduce the overall height to provide irradiance and produce a uniform illuminating surface. [0010] In order to achieve the above object, the present invention provides a light source module including a heat dissipation substrate, a plurality of light emitting diode chips, and a heat exchange mechanism, the heat dissipation substrate having a circuit layer, and the light emitting diodes The body wafer is directly arranged on one side of the heat dissipation substrate and electrically connected to the circuit layer. The light emitting wavelength band of the light emitting diode chip is 220 to 450 nm, and the heat exchange mechanism is disposed on the other side of the heat dissipation substrate. . [0011] The LED chips of the present invention are directly disposed on the heat dissipation substrate, thereby reducing the arrangement distance of the adjacent two LED chips to improve the light uniformity of the light source module. Furthermore, the distance between the transparent cover and the LED chip can be reduced, the overall height of the light source module can be lowered, and the illuminance of the light source module can be improved to be suitable for drying, curing and micro Shadow demand. [Embodiment] The spirit of the present invention will be clearly described in the following description and detailed description. Those skilled in the art will be able to change and modify the technology as taught by the present invention after understanding the embodiments of the present invention. It does not deviate from the creation of 1002251# single number deletion 1 page 5 / total 22 pages 1013103892-0 M429055 1Q1 March 19 revised the spirit and scope of the page. [0013] In general, a light emitting diode chip (or a light emitting diode chip) is formed by a crystal growth method on a single wafer (eg, a sapphire substrate). The county wafer 'is cut into a plurality of cells after forming a metal electrode, and each cut knows that each unit can emit light independently. [0014] Referring to the second, third, and fourth figures, respectively, an exploded perspective view, a combined view, and a cross-sectional view of the light source module of the first embodiment are created. The light source module 10 is disposed on a dryer, a curing machine or an exposure machine, and projects light toward the illuminating object, and the illuminating object is correspondingly provided with an ink, a (resin) glue and a photoresist for the light source module 10, The light source module 10 is mainly used for improving the drying speed of the ink, curing the (resin) glue, and forming a pattern of the corresponding mask on the photoresist. The light source module 10 includes a heat dissipation substrate 110, a plurality of light emitting diode chips 120, a light transmissive cover 130, and a heat exchange mechanism 140. [0015] The heat dissipation substrate 110 is substantially rectangular, but is not limited thereto. The heat dissipation substrate 110 is a substrate having high thermal conductivity, and can be made of a low thermal resistance material such as a metal such as copper or aluminum, a composite metal or a ceramic, and a circuit layer 112 is formed on one surface 111 of the heat dissipation substrate 110. The circuit layer 112 can be a silver paste line or a copper foil line. In the embodiment, the circuit layer 112 is formed on the upper surface of the heat dissipation substrate 110. [0016] The light-emitting diodes 120 have an emission wavelength of 220 to 450 nanometers (nm), which is ultraviolet light; and the light-emitting angles of the light-emitting diodes 120 are as shown in FIG. ~120 degrees, and can be a single wavelength light emitting diode chip or a multi-wavelength light emitting diode chip. The light-emitting diode wafer 120 is directly 10022515^ single number AG1()1^6 1 / * 22 I 1013103892-0 Μ429055 · • 101: March 19th, the revised replacement page is grounded on the heat dissipation substrate 110 One side is electrically connected to the circuit layer 11.2', whereby the heat dissipation substrate 11 can quickly guide away thermal energy generated when the LED chips 120 are lit, and avoid the junction of the LED chips 120. The temperature rises and the overall luminous efficiency decreases. Further, the arrangement distance D of the adjacent two LED chips 120 can be increased (as shown in FIG. 5), thereby increasing the unit of the light source module by 10 units. Light illuminance of the area. In the present embodiment, the light-emitting diode wafers 120 are exemplified by 2,56, and are arranged in a square shape, which is not limited thereto. [0017] It is worth mentioning that, if the arrangement density of the light-emitting diode chips 120 is increased without changing the illuminance of the light source module 1 , the light-emitting diode chips 120 can be reduced. The irradiance of the radiation, in this way, can effectively reduce the overall cost. [0018] Further, the light-emitting diode chips 120 are electrically connected to/connected to the circuit layer 112 through a plurality of wires 19 (as shown in FIGS. a and b). The horizontal LED chip (as shown in FIG. 6A) 120 is electrically connected to the electrode 121 of the LED chip 120 and the circuit layer 112 through two wires 190; the vertical LED chip One of the electrodes 121 is directly electrically connected to the circuit layer 112, and the other electrode 121 is electrically connected to the circuit layer 112 through a wire 19〇. [0019] Referring to the first and fourth figures, the transparent cover 130 is supported on the side of the heat dissipation substrate 110 on which one of the light emitting diode chips 120 is disposed and covers the light emitting diode wafer 120. Therefore, the height Η between the transparent cover 13 〇 and the LED chips 120 can be reduced (as shown in FIG. 5 ) and the illuminance of the light source module 10 can be increased by β 10 〇. 2 about 15 production order number A01〇l page 7 / total 22 pages 1013103892-0 M429055 101 years. March 19th press positive _ page [0020] The transparent cover 130 is made of light-transmitting material, in this implementation In the example, the transparent cover 130 is made of quartz material to improve the transmittance of ultraviolet light, and can avoid the deterioration of ultraviolet light (ep0Xy) or silicone resin as conventionally used. And the situation of light decay occurs. Furthermore, the transparent cover 130 can be transparent, translucent or matte depending on the light transmittance, and the light-transmissive cover 呈3〇 can be more effectively lifted. The uniformity of the light projected by the light source module 10 to the illuminating object. Moreover, the transparent cover 130 further includes an anti-nnf rared bond film 132 ′ adjacent to a surface 131 of the LED chip 120 to filter out infrared components. In this embodiment, The anti-infrared coating film 132 is exemplified as being disposed on the inner surface of the transparent cover 130. [0021] The heat exchange mechanism 140 is disposed on one side of the heat dissipation substrate 11 opposite to the light emitting diode chip 120 for accelerating the thermal energy generated when the light emitting diode wafer 120 is turned on. In the embodiment, the heat exchange mechanism 140 is exemplified by a fan. In actual implementation, the heat exchange mechanism 140 can be provided as a heat dissipation front plate, a heat pipe or a vapor chamber. [0022] The light source module 10 The utility model further includes a body 150, a fixing frame 160 and a plurality of fixing members 170. The base body 150 has a plurality of fixing 152. The fixing frame 160 has a plurality of through holes 162 corresponding to the fixing holes 152, and the fixing members 170 penetrate the same. The perforations 162 are fixed to the fixing holes 152. In this embodiment, the fixing 152, the puncturing 162, and the fixing members 170 are respectively exemplified by four, but not limited thereto. The fixing frame 160 is configured to fix the transparent cover 130 to the base 150, and the base 150 and the transparent cover 130 cooperate to define an accommodating space 180. The heat dissipation substrate 11 〇 10022515 ^ ^ A0101 Page 8 of 22 1013103892-0 M429055 101. On March 19th, the positive Si page, the LED array 120 and the heat exchange mechanism 140 are disposed in the accommodating space 180. Furthermore, the base 150 further includes a plurality of heat dissipation holes 154 for convection with the outside air to achieve a better heat dissipation effect. [0023] With reference to the seventh figure, it is a top view of the light source unit of the second embodiment of the present invention. The light source module 10a of the present embodiment is substantially the same as the above-described first embodiment, and is different in the light-emitting diode wafer 120a. In the embodiment, the light-emitting diode wafers 120a are exemplified by 30. And the light-emitting band thereof may be 36511111, 38511111 or 39511111, but is not limited thereto. Furthermore, the two adjacent columns of the LED array 120a arranged along a first axial direction (such as the X-axis) are misaligned in a second axial direction (such as the Y-axis) perpendicular to the first axis. The light source angle Φ of the LED chips 120a is adjusted to adjust the arrangement distance D of the adjacent two LED chips 120a to achieve the complementary effect of the light, and the light source module 10a achieves uniform radiation. The effect of illuminance.
[0024] 配合參閱第八圖，為本創作第三實施例之光源模組之上 視圖。本實施例之光源模組l〇b大致與上述第一實施例相 同，其不同之處在於該等發光二極體晶启120b ;於本實 施例中，該等發光二極體晶片120b以72個為例，並且呈 矩陣撞地排列於該散熱基板110，實際實施時則不以此為 限。該等發光二極體晶片120b包含複數第一發光二極體 晶片122b、複數第二發光二極體晶片124b及複數第三發 光二極體晶片126b ;該等第一發光二極體晶片122b的發 光波段介於390~400nm之間，且較佳地為395nm ;該等第 二發光二極體晶片124b的發光波段介於360〜370nm，且 較佳地為385nm ;該等第三發光二極體晶片126b的發光 10022515^W A0101 第9頁/共22頁 1013103892-0 M429055 _· , 101年.03月19日按正替換頁 波段介於360〜370nm，且較佳地為365nra。再者，該等第 一發光二極體晶片122b的使用數量等於該第二發光二極 體晶片124b的使用數量，該等第三發光二極體晶片126b 的使用數量大於該第二發光二極體晶片124b，如此一來 ，該光源模組1 Ob的頻譜分佈可以近似於水銀燈的頻譜分 佈。當然，該等發光二極體晶片120b的排列方式也可以 相同於第二實施例之光源模組10a。於實際實施時，該等 第一發光二極體晶片122b、該等第二發光二極體晶片 124b及該等第三發光二極體晶片126b的排列方式及使用 _ 數量可以依照射物使用之油墨、（樹脂）膠材或光阻所需 之照射波長不同而加以調整。[0024] Referring to FIG. 8 , it is an upper view of the light source module of the third embodiment of the present invention. The light source module 100b of the present embodiment is substantially the same as the first embodiment described above, except that the light emitting diodes 120b are provided. In this embodiment, the light emitting diode chips 120b are 72. For example, the heat dissipation substrate 110 is arranged in a matrix and is not limited thereto. The light emitting diode chip 120b includes a plurality of first light emitting diode chips 122b, a plurality of second light emitting diode chips 124b, and a plurality of third light emitting diode chips 126b; and the first light emitting diode chips 122b The illuminating band is between 390 and 400 nm, and preferably 395 nm; the illuminating band of the second illuminating diode 124b is between 360 and 370 nm, and preferably 385 nm; the third illuminating dipole The light emission of the bulk wafer 126b is 10022515^W A0101 page 9/22 pages 1013103892-0 M429055 _·, 101. March 19th, the positive replacement page band is between 360 and 370 nm, and preferably 365 nra. Furthermore, the number of the first LED chips 122b is equal to the number of the second LED chips 124b. The third LED chips 126b are used in a larger amount than the second LEDs. The bulk wafer 124b, as such, the spectral distribution of the light source module 1 Ob can be approximated by the spectral distribution of the mercury lamp. Of course, the arrangement of the LED chips 120b may be the same as that of the light source module 10a of the second embodiment. In actual implementation, the arrangement and usage of the first LED arrays 122b, the second LED wafers 124b, and the third LED wafers 126b may be used according to the illumination. The ink, (resin) glue or photoresist is adjusted to have different irradiation wavelengths.
[0025] 綜合以上所述，本創作之該等發光二極體晶片係直接地 設置於該散熱基板上，藉此可以降低相鄰之兩發光二極 體晶片的排列距離，以提升該光源模組的出光均勻度； 再者，可以降低該透光罩體與該發光二極體晶片之間的 設置距離，使該光源模組的整體高度降低並提升該光源 模組的輻射照度。 [0026] 然以上所述者，僅為本創作之較佳實施例，當不能限定 本創作實施之範圍，即凡依本創作申請專利範圍所作之 均等變化與修飾等，皆應仍屬本創作之專利涵蓋範圍意 圖保護之範嘴。 【圖式簡單說明】 [0027] 第一圖為習知之紫外光發光二極體光源模組之局部剖視 圖。 [0028] 第二圖為本創作第一實施例之光源模組之立體分解圖。 1(){)22515f單编號A0101 第10頁/共22頁 1013103892-0 M429055 101年.03月19日梭正替換百 [0029] 第三圖為本創作第一實施例之光源模組之組合圖。 [0030] 第四圖為本創作第一實施例之光源模組之剖視圖。 [0031] 第五圖為本創作第一實施例之光源模组之局部剖視圖及 光行進路徑示意圖。 [0032] 第六圖（a)、（b)為本創作第一實施例之光源模組之局部 放大圖。 [0033] • 第七圖為本創作第二實施例之發光二極體晶片於電路基 板之排列示意圖。 [0034] 第八圖為本創作第三實施例之發光二極體晶片於電路基 板之排列示意圖。 [0035] 【主要元件符號說明】 〈習知技術〉 [0036] 50紫外光發光二極體光源模組 [0037] φ 51 0電路板 [0038] 520發光二極體 [0039] 522封裝座體 « [0040] 523容置槽 [0041] 524導電支架 [0042] 526發光二極體晶片 [0043] 527導線 [0044] 528光學透鏡 10022515^^^^ A〇101 » 11 I / ^· 22 1 1013103892-0 M429055 [0045] 530透光罩體 [0046] d排列距離 [0047] h設置距離 [0048] 〈本創作〉 [0049] 10、10a、10b光源模組 [0050] 110散熱基板 [0051] 111表面 [0052] 112電路層 [0053] 120、120a、120b發光二極體晶片 [0054] 121電極 [0055] 122b第一發光二極體晶片 [0056] 124b第二發光二極體晶片 [0057]. 126b第三發光二極體晶片 [0058] 130透光罩體 [0059] 131表面 [0060] 132抗紅外線鍍膜 [0061] 140熱交換機構 [0062] 150座體 [0063] 152固定孔 [0064] 10022515严编號 154散熱孔 A0101 第12頁/共22頁 101年.03月19日梭正替換頁[0025] In summary, the LED chips of the present invention are directly disposed on the heat dissipation substrate, thereby reducing the arrangement distance of the adjacent two LED chips to enhance the light source mode. The uniformity of the light emission of the group; further, the distance between the transparent cover and the LED chip can be reduced, the overall height of the light source module is lowered, and the illuminance of the light source module is improved. [0026] However, the above descriptions are only preferred embodiments of the present invention, and the scope of the present invention cannot be limited, that is, the equal changes and modifications made by the scope of the patent application of the present invention should still belong to the present creation. The patent covers the scope of the intention to protect. BRIEF DESCRIPTION OF THE DRAWINGS [0027] The first figure is a partial cross-sectional view of a conventional ultraviolet light emitting diode light source module. [0028] The second figure is an exploded perspective view of the light source module of the first embodiment of the present invention. 1(){)22515f单单A0101 Page 10/Total 22 Page 1013103892-0 M429055 101. March 19th Shuttle is replacing 100 [0029] The third figure is the light source module of the first embodiment of the present invention. Combination chart. [0030] The fourth figure is a cross-sectional view of the light source module of the first embodiment of the present invention. [0031] FIG. 5 is a partial cross-sectional view and a schematic diagram of a light traveling path of the light source module according to the first embodiment of the present invention. [0032] Fig. 6(a) and (b) are partially enlarged views of the light source module of the first embodiment of the present invention. [0033] The seventh figure is a schematic view showing the arrangement of the light-emitting diode chips of the second embodiment in the circuit board. 8 is a schematic view showing the arrangement of the LED chips of the third embodiment on the circuit board. [Explanation of main component symbols] <Priority technology> [0036] 50 ultraviolet light emitting diode light source module [0037] φ 51 0 circuit board [0038] 520 light emitting diode [0039] 522 package body « [0040] 523 accommodating groove [0041] 524 conductive support [0042] 526 light-emitting diode wafer [0043] 527 wire [0044] 528 optical lens 10022515^^^^ A〇101 » 11 I / ^· 22 1 1013103892-0 M429055 [0045] 530 light-transmissive cover [0046] d arrangement distance [0047] h set distance [0048] <this creation> [0049] 10, 10a, 10b light source module [0050] 110 heat dissipation substrate [0051 111 surface [0052] 112 circuit layer [0053] 120, 120a, 120b light emitting diode wafer [0054] 121 electrode [0055] 122b first light emitting diode wafer [0056] 124b second light emitting diode wafer [ 0057]. 126b third light-emitting diode wafer [0058] 130 light-transmitting cover body [0059] 131 surface [0060] 132 anti-infrared coating film [0061] 140 heat exchange mechanism [0062] 150 seat body [0063] 152 fixing hole [0064] 10022515 strict number 154 cooling hole A0101 page 12 / total 22 pages 101 years. March 19th shuttle replacement page
1013103892-0 M4290551013103892-0 M429055
[0065] 160固定框 [0066] 162穿孔 [0067] 170固定件 [0068] 180容置空間 [0069] 190導線 [0070] D排列距離 [0071] Η設置距離 10022515^^^ A〇101 第13頁/共22頁 •101年03月19日梭正菁換頁 1013103892-0160 fixing frame [0066] 162 perforation [0067] 170 fixing member [0068] 180 accommodating space [0069] 190 wire [0070] D arranging distance [0071] Η setting distance 10022515 ^ ^ ^ A 〇 101 13th Page / Total 22 pages • March 19, 2011 Shuttle Zhengjing page 1013103892-0