TWM426144U - A high brightness light-emitting diode package structure - Google Patents

A high brightness light-emitting diode package structure Download PDF

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Publication number
TWM426144U
TWM426144U TW100214247U TW100214247U TWM426144U TW M426144 U TWM426144 U TW M426144U TW 100214247 U TW100214247 U TW 100214247U TW 100214247 U TW100214247 U TW 100214247U TW M426144 U TWM426144 U TW M426144U
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TW
Taiwan
Prior art keywords
light
substrate
emitting diode
crystal
solid
Prior art date
Application number
TW100214247U
Other languages
Chinese (zh)
Inventor
zheng-hong Yang
Original Assignee
Lextar Electronics Croportion
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lextar Electronics Croportion filed Critical Lextar Electronics Croportion
Priority to TW100214247U priority Critical patent/TWM426144U/en
Publication of TWM426144U publication Critical patent/TWM426144U/en
Priority to CN2012203300771U priority patent/CN202695442U/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49109—Connecting at different heights outside the semiconductor or solid-state body

Abstract

A high brightness light-emitting diode (LED) package structure comprises a substrate, and plurality LED chips mounted on the substrate. The substrate includes at least one chip-fixed unit that has at least two chip-setting areas. The distances from the chip-setting areas to the bottom of the substrate are different. There is at least one LED chip mounted on every chip-setting area and electrically connects with the substrate to make the LED chip gets electric power from the substrate to produce light. This invention utilizes those different distance from chip-setting areas to the bottom of the substrate to make those LED chips distribute over varied height locations, and decrease the emitting light interference between two neighbor chip-setting areas to raise the brightness of LED package structure.

Description

M426144 五、新型說明： 【新型所屬之技術領域】 本新型是有關於一種發光二極體的封裝裝置，特別是指 一種可提高發光亮度的發光二極體封裝農置。 .【先前技術】 參閱圖1 ’早期封裝有複數發光二極體晶粒的發光二極 體封裝結構1，包含一基板u、複數固晶於該基板u的同 一平面的發光二極體晶粒12,及一封裝膠材13。 該等發光二極體晶粒12是電性連接於該基板u上，再 以透光的封裝膠材13固封而與外界隔絕，.避免如濕氣滲入 等外界環境的影響而縮減該等發光二極體晶粒12的工作壽 命。但這樣的發光二極體封裝結構！在由該基板u向該: 發光二極體晶粒12供電而使該等發光二極體晶粒12發光 時’該等發光二極·體晶粒12彼此間會出現相互吸光、干涉 的現象，而無法達到預期的發光亮度。 之後’發展出如圖2所示的改良式發光二極體封裝結構 2其包3基板21、複數發光二極體晶粒22，及一封裝膠 材23。 夕 該基板21包括複數間隔排列且由該基板2ι 了頁面向底部 延伸的封裝凹槽213,而每一封裝凹槽213的底面2ΐι皆位 於相同平面。 該等發光二極體晶粒22位於該等封裝凹槽213 分別設置於每-封裝凹槽213的底面2ιι上，並與該基 電性連接，可經由該基板21取得外部電能而產生光。 該封裝膠材23填滿該等封裝凹槽213並包覆其内部中 的發光二極體晶粒22’使該等带光二極體晶粒22與外界隔 絕而免於受環境中氣體或濕氣影響導致提早衰化。 备經雜板21對該等發光二極體晶粒22供電時，該等 發光一極體晶粒22產生光，產生的光部分直接穿經該封裝 膠材23⑥至外界’部分被該基板.21吸收轉變成廢熱，一小 部分經該等封裝凹槽213的内壁面212反射後穿經該封裝膠 材23至外界。 " 上述發光二極體封裝結構2雖然憑藉將該等發光二極 體晶粒22分別設置於該等封裝凹槽213中，而降低彼此吸 光的問題’但由於該等發光二極體晶粒22仍是位於同—水 平南度，防止光干涉現象的效果有限，仍然會造成出光的均 勻度較差影響整體發光亮度的問題。 【新型内容】 因此，本新型之目的，即在提供一種可以提高亮度且可 改善出光均勻度的高亮度的發光二極體封裝裝置。 於是，本新型高亮度的發光二極體封裝裝置，包含一基 板’及複數發光二極體晶粒。 該基板頂面包括至少一個的固晶單元，該固晶單元具有 至一個刀別與该基板底面距離不等的固晶面。每一固晶面 上分別設置有i少-發光二極體晶粒，而該等發光二極體晶 粒與4基板電性連接，透過該基板由外部供電時，該等發光 二極體晶粒即接受電能而產生光。 本新型之功效：利用不同平面高度的該等固晶面設計來 M426144 減少該等發光一極體晶粒在電性連接發光時與鄰近固晶面 間的吸光與干涉問題，同時改善出光均勻度，而提高整體發 光二極體封裝裝置的發光亮度。 【實施方式】 有關本新型之前述及其他技術内容、特點與功效，在以 下配合參考圖式之二個較佳實施例的詳細說明中，將可清楚 的呈現。 在本新型被詳細描述之前，要注意的是，在以下的說明 内容中，類似的元件是以相同的編號來表示。 參閱圖3、4，本新型高亮度的發光二極體封裝裝置之 一第一較佳貫施例包含一基板3、複數發光二極體晶粒4 , 及一封裝膠材5。 該基板3頂面包括複數相鄰排列的固晶單元3丨，每一 固晶單το 31具有二個分別與該基板底面距離不等的固晶面 3 11 ’ 一是距離該基板3底面較近的固晶面3丨丨a，與一距離 該基板3底面較遠的固晶面3ub，且該等固晶面3ua、3iib 分別彼此排列於平行直線上（見圖3)，而每一固晶單元3ι 還具有一由該較靠近基板31底面的固晶面3ua侧邊斜向 上延伸連接另一遠離該基板3底面的固晶面31lB ,並可反 射光線的反光斜面312。 實際應用上，每一固晶單元31可具有二個以上分別與 該基板3底面距離不等的固晶面311及反光斜面312，或是 該基板3只包括一固晶單元31亦可’而不僅限於本第—較 佳實施例所施行的數目b M426144 —料發光二極體晶粒4分別固著於該等固晶面w上， 母—固晶面311至少芍罟亡 Λ 楚—± 八足置有—個發光二極體晶/粒4,而在本 第二較佳實施例的圖示中每_固晶面31"會示一個發光二 極體晶粒4為代表，令蓉路土 # ^ ^二極體晶粒]並與該基板3 連接，且树低成本與提升❹面積，本 例令還特別提供-種電性連接方" 电注運接方式，該等成矩形排列整齊的 固晶面3.U間經由導線6 (例如金線）以垂直於每一固晶單. 凡31的短邊成列地電性㈣該等分別設置於兩相鄰固晶面 3_11上的發光二極體晶粒4 (如圖3)，再由外部電路（圖未 不）透過絲板3、該等導線6向該等發光二極體晶粒4提 供電能，而該等發光二極體晶粒4即接受電能而發光。另 外’當然該等分別設置於兩相鄰固晶面311上的發光二極體 晶粒4也可透過該等導線6以平行於每__固晶單元η的短 邊成排地電性串聯形成-完整的電通路，而使得每—發光二 極體晶粒4皆可獲得外部電路提供的電能而發光。M426144 V. New description: [New technology field] The present invention relates to a package device for a light-emitting diode, and more particularly to a light-emitting diode package agricultural device capable of improving light-emitting brightness. [Prior Art] Referring to FIG. 1 'A light-emitting diode package structure 1 in which a plurality of light-emitting diode crystal grains are packaged in the early stage, comprising a substrate u, and a plurality of light-emitting diode crystal grains fixed in the same plane of the substrate u 12, and a package of adhesive material 13. The LEDs 12 are electrically connected to the substrate u, and are sealed by the transparent encapsulating material 13 to be isolated from the outside, and are prevented from being reduced by the influence of external environment such as moisture infiltration. The working life of the light-emitting diode die 12. But such a light-emitting diode package structure! When the substrate u is supplied with the light-emitting diode die 12 to cause the light-emitting diode crystal grains 12 to emit light, the light-emitting diodes and the crystal grains 12 may absorb light and interfere with each other. , and can not achieve the expected brightness of the light. Thereafter, an improved light-emitting diode package structure 2 as shown in FIG. 2 is developed, which comprises a substrate 3, a plurality of light-emitting diode chips 22, and a package material 23. The substrate 21 includes a plurality of package recesses 213 arranged at intervals and extending from the substrate 2 to the bottom, and the bottom surface 2 of each of the package recesses 213 is located on the same plane. The light-emitting diodes 22 are disposed on the bottom surface 2 of each of the package recesses 213, and are electrically connected to the base, and external light is generated through the substrate 21 to generate light. The encapsulating material 23 fills the package recesses 213 and encloses the light-emitting diode crystal grains 22 ′ in the interior thereof to isolate the light-emitting diode crystal grains 22 from the outside environment from being exposed to gas or moisture in the environment. Gas effects lead to premature decay. When the light-emitting diodes 22 are supplied with the light-emitting diodes 22, the light-emitting diodes 22 generate light, and the generated light portions directly pass through the package rubber 236 to the outside portion by the substrate. The absorption of 21 is converted into waste heat, and a small portion is reflected by the inner wall surface 212 of the package recess 213 and passes through the encapsulant 23 to the outside. < The above-mentioned light-emitting diode package structure 2 reduces the problem of light absorption by each other by providing the light-emitting diode crystal grains 22 in the package recesses 213, respectively, but due to the light-emitting diode crystal grains 22 is still located in the same - horizontal south, the effect of preventing the phenomenon of light interference is limited, and still causes the problem that the uniformity of the light output affects the overall brightness of the light. [New content] Therefore, it is an object of the present invention to provide a high-intensity light-emitting diode package device which can improve brightness and improve light-emitting uniformity. Therefore, the novel high-intensity light-emitting diode package device comprises a substrate 'and a plurality of light-emitting diode crystal grains. The top surface of the substrate includes at least one die bonding unit having a solid crystal face having a distance different from that of the substrate. Each of the solid crystal planes is provided with an i-light-emitting diode die, and the light-emitting diode crystal grains are electrically connected to the four substrates, and the light-emitting diode crystals are externally supplied through the substrate. The grain receives electricity and produces light. The effect of the novel: using the different solid plane design of the different plane heights, the M426144 reduces the light absorption and interference between the light-emitting one-pole crystal grains and the adjacent solid crystal surface, and improves the light uniformity. Thereby, the brightness of the illumination of the overall light emitting diode package is improved. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments of the accompanying drawings. Before the present invention is described in detail, it is to be noted that in the following description, similar elements are denoted by the same reference numerals. Referring to Figures 3 and 4, a first preferred embodiment of the novel high-brightness LED package includes a substrate 3, a plurality of LED dipoles 4, and a package adhesive 5. The top surface of the substrate 3 includes a plurality of adjacently arranged solid crystal units 3丨, each of the solid crystal single το 31 having two solid crystal faces 3 11 ′ respectively different from the bottom surface of the substrate, and a distance from the bottom surface of the substrate 3 a near solid crystal surface 3丨丨a, and a solid crystal surface 3ub far from the bottom surface of the substrate 3, and the solid crystal surfaces 3ua, 3iib are respectively arranged on parallel lines (see FIG. 3), and each The die bonding unit 3 ι further has a reflective slope 312 extending obliquely upward from the side of the solid crystal surface 3ua closer to the bottom surface of the substrate 31 to connect the other surface away from the bottom surface of the substrate 3 and reflecting the light. In practical applications, each of the die bonding units 31 may have two or more solid crystal faces 311 and reflective bevels 312 respectively ranging from the bottom surface of the substrate 3, or the substrate 3 may include only one die bonding unit 31. Not limited to the number b M426144 performed by the first preferred embodiment, the light-emitting diode crystal grains 4 are respectively fixed on the solid crystal faces w, and the mother-solid crystal surface 311 is at least 芍罟-- The octagonal lens is provided with a light-emitting diode crystal/particle 4, and in the illustration of the second preferred embodiment, each _solid crystal surface 31" is represented by a light-emitting diode crystal 4, Lulu #^^diode grain] is connected to the substrate 3, and the tree is low-cost and raises the area of the crucible. In this example, a kind of electric connection is also provided, and the electric connection method is adopted. The rectangular solid crystal faces are interposed between the wires 3.U through the wires 6 (for example, gold wires) to be perpendicular to each of the solid crystals. The short sides of the 31 are electrically arranged. (4) These are respectively disposed on the two adjacent solid crystal faces. The LED body 4 on the 3_11 (Fig. 3) is then passed through an external circuit (not shown) through the wire plate 3, and the wires 6 are directed to the LEDs. 4 provides electrical energy, and the light-emitting diodes receive power grains i.e. 4 to emit light. In addition, of course, the light-emitting diode crystal grains 4 respectively disposed on the two adjacent solid crystal faces 311 can also be electrically connected in series through the wires 6 in parallel with the short sides of each of the __solid crystal cells η. A complete electrical path is formed such that each of the light-emitting diode dies 4 can be illuminated by electrical energy provided by an external circuit.

該封裝膠材5是透光且覆蓋於該基板3頂面並包覆节等 發光二極體晶粒4與導線6等内部元件，使該等内部元料 外界環境隔絕，以避免濕氣等環境因素影響而導致該等内部 兀件提.早衰化，縮短了該等發光二極體晶粒4實際工作壽 命。在應用上，該封裝膠材5亦可推雜榮光粉以形成不同I 長範圍的光’使§玄發光二極體封裝裝置發出更均句且波長範 圍更廣的混光。 ^ ^ 當忒等發光二極體晶粒4接受由該基板3提供的外部電 能時，可將電能轉換成光射出並由該等發光二極體晶粒4 表面離開該等發光二極體晶粒4，再經該透光的封裝膠材5 出光至外界。 該等發光二極體晶粒4發光時，朝該等反光斜面312 行進的光（即由該等發光二極體晶粒4側面離開射出的 光）’可經由該等反光斜面3 12反射後而出光至外界，不僅 可提尚出光亮度還可避免光被該基板3吸收後轉變成廢熱 而影響該發光二極體封裝裝置的效能。 整體而言’本第一較佳實施例因具有二個分別位於距離 該基板3底面不等的固晶面3丨丨，相對於先前技術所述封裝 結構中皆固晶於同一平面的發光二極體晶粒，更可降低鄰近 的發光二極體晶粒4間發出光時的吸光、干涉效應。 參閱圖5’本新型高亮度的發光二極體封裝裝置之一第 一較佳貫施例是與該第一較佳實施例相似，其不同處僅在於 該荨固晶單元3 1的排列形狀β 在本第二較佳實施例中，該等距離該基板3底部較近的 固晶面311Α與該等距離較遠的固晶面311Β相互交錯規別 排列，而非前述第一較佳實施例中是連續平行排列的。藉該 等與基板3底面距離不等的固晶面3丨丨a、3丨1Β的間隔設置 來進一步降低該等分別固晶於固晶面311的發光二極體晶 粒4供電發光時彼此間的吸光、干涉問題。 參閱圖6' 7' 8，此外，本新型的較佳實施例的該等固 晶面3 11還可以是如圖6所示的成圓形平面，且該等固晶面 311Α與該等固晶面311Β與該基板3底部距離不同，或如圖 7、8所示將該等固晶單元31排列成不同的環形態樣，而得 M426144 到更佳的發光效果。 另外補充說明的是，本新型之重點在於具有與基板2 距離不一且固著發光二極體晶粒4用的平面，因此，每—固 曰曰單元3 1以及每一固晶面3丨〗的形狀、排列並不限於該第 較佳貝轭例與該第二較佳實施例令所述、以用來說明的矩 形、圓形態樣、陣列、或同心圓的環形態樣等的排列結構； 更進一步地’每一固晶面311也能設置多數個發光二極體晶 粒4 (排列成例如環狀、或昧列態樣等）而提昇亮度、降低 彼此吸光、干涉的問題。 本新型高亮度的發光二極體封裝裝置將該等發光二極 體晶粒4分別固晶於具有二相對該基板3底面距離不等的固 b曰面3 11的固晶單元3丨上，以減少該等發光二極體晶粒4 發光時該等固晶面3 11間的吸光現象；另一特別之處，由該 相對較低的s亥等固晶面3 11A周緣斜向上延伸的該等反光斜 面3 12是以高反光特性材質所構成而可反射自該等發光二 極體晶粒4發出但不直接朝外界行進的光線，經過至少一次 的反射後朝外界出光而產生集光效果，將原本無法射出至外 界的光線出光到外界。 參閱圖9’本新型高亮度的發光二極體封裝袭置中，每 一分別連接該等固晶面311的反光斜面312上設置有至少一 發光二極體晶粒4 ’藉此提高該基板3的固晶密度，進而再 加強該發光二極體封裝裝置的整體發光亮度。 綜上所述，藉由將發光二極體晶粒4固著於該等固晶單 元31所設計的、與該基板3底面蹕離不等的複數固晶面311 M426144 上，不但可減低吸光、干涉的光學問題，還藉著反光斜面 312的利用加強增光效果，因此可大幅提高本新型高亮度發 光二極體封裝裝置的發光亮度，故確實能達成本新型之目 的。 惟以上所述者，僅為本新型之較佳實施例而已，當不能 以此限定本新型實施之範圍，即大凡依本新型申請專利範圍b 及發明說明内容所作之簡單的等效變化與修飾，皆仍屬本新 型專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一剖視示意圖，說明一早期發光二極體封裝社 構； … 圖2是一俯視示意圖，說明一習知的改良式發光二極體 封裝結構； 圖3是一俯視示意圖，說明本新型高亮度的發光二極體 封裝裝置的一第一較佳實施例； 圖4是一剖視示意圖，說明該第一較佳實施例中所包含 的複數發光二極體晶粒的排列； 圖5是一俯視示意圖，說明本新型高亮度的發光二極體 封裝裝置的一第二較佳實施例； 圖6是一類似圖5的俯視示意圖，說明該第二較佳實施 例中的另一種固晶態樣； 圖7是一類似圖5的俯視示意圖，說明該第二較佳實施 例中的另一種固晶態樣； 圖8是一類似圖5的俯視示意圖，說明該第二較佳實施 10 M426144 例中的另一種固晶態樣；及 圖9是一類似圖4的剖視示意圖，說明本新型高亮度的 發光二極體封裝裝置中的另一固晶態樣。 11 M426144 【主要元件符號說明】 1 ....... …發光二極體封裝 22....... …發光一極體晶粒 結構 23....... …封裝膠材 11…… …基板 3 ···•… …基板 12…… …發光一極體晶粒 3 1....... …固晶單元 13…… …封裝膠材 311A·· …固日日面 2 ....... …改良式發光二極 311B ·· …固日日面 體封裝結構 312 ..... …反光斜面 21…… …基板 4 ........ …發光—極體ΘΒ粒 211 ·.·· …底面 5 ........ …封裝膠材 212 ···· …内壁面 6 ........ ••導線 213 ···· …封裝凹槽 12The encapsulant 5 is transparent and covers the top surface of the substrate 3 and covers internal components such as the light-emitting diode die 4 and the wires 6 to isolate the external environment of the internal materials to avoid moisture, etc. The influence of environmental factors causes these internal components to be prematurely degraded, shortening the actual working life of the LEDs 4 of the LEDs. In application, the encapsulating material 5 can also push the glory powder to form light of different I long range. The CMOS light-emitting diode package device emits light more uniformly and has a wider wavelength range. ^ ^ When the illuminating diode die 4 receives the external electrical energy supplied by the substrate 3, the electrical energy can be converted into light and emitted from the surface of the luminescent diode 4 from the luminescent crystal. The granule 4 is then discharged to the outside through the light-transmissive encapsulant 5 . When the light-emitting diode crystal grains 4 emit light, the light traveling toward the reflective slopes 312 (that is, the light emitted from the side surfaces of the light-emitting diode crystal grains 4) can be reflected by the reflective slopes 3 12 When the light is emitted to the outside, not only the brightness of the light can be raised, but also the light is absorbed by the substrate 3 and converted into waste heat to affect the performance of the light-emitting diode package device. In general, the first preferred embodiment has two solid crystal faces 3 分别 which are respectively located at a distance from the bottom surface of the substrate 3, and is fixed to the same plane in the package structure described in the prior art. The polar body grains can reduce the light absorption and interference effects when light is emitted between the adjacent light-emitting diode crystal grains 4. Referring to FIG. 5, a first preferred embodiment of the present invention is similar to the first preferred embodiment, except that the arrangement shape of the solid crystal unit 31 is different. In the second preferred embodiment, the solid crystal surface 311Α which is closer to the bottom of the substrate 3 and the solid crystal surface 311Β which are further apart from each other are arranged in a staggered manner, instead of the first preferred embodiment. In the examples, they are arranged in parallel. Further, by spacing the solid crystal faces 3丨丨a and 3丨1Β which are different in distance from the bottom surface of the substrate 3, the light-emitting diode crystal grains 4 respectively bonded to the solid crystal surface 311 are further reduced in power supply and illumination. The problem of light absorption and interference. Referring to FIG. 6' 7' 8, in addition, the solid crystal faces 31 of the preferred embodiment of the present invention may also be a circular plane as shown in FIG. 6, and the solid crystal faces 311 and the solids The crystal faces 311Β are different from the bottom of the substrate 3, or the solid crystal units 31 are arranged in different ring patterns as shown in FIGS. 7 and 8, and M426144 is obtained to obtain a better light-emitting effect. In addition, it is added that the focus of the present invention is to have a plane which is different from the substrate 2 and fixes the light-emitting diode die 4, and therefore, each solid-solid unit 3 1 and each solid crystal surface 3丨The shape and arrangement of the shape are not limited to the arrangement of the rectangular shape, the circular shape, the array, or the concentric circle ring shape as described in the second preferred embodiment and the second preferred embodiment. Further, each of the solid crystal planes 311 can also provide a plurality of light-emitting diode crystal grains 4 (arranged, for example, in a ring shape or a tantalum pattern) to increase the brightness and reduce the mutual light absorption and interference. The high-brightness light-emitting diode package device of the present invention is respectively fixed on the solid crystal unit 3 of the solid-state diode 3 11 having two different distances from the bottom surface of the substrate 3, In order to reduce the light absorption phenomenon between the solid crystal faces 3 11 when the light emitting diodes 4 emit light; another special point is that the relatively low sigma and other solid crystal faces 3 11A extend obliquely upward. The reflective bevels 3 12 are made of a material having a high reflective property and can be reflected from the light-emitting diode crystal grains 4 but not directly toward the outside. After at least one reflection, the light is emitted toward the outside to generate light. The effect is to emit light that could not be emitted to the outside world to the outside world. Referring to FIG. 9 ′, in the high-brightness LED package of the present invention, at least one LED die 4 ′ is disposed on each of the reflective slopes 312 respectively connected to the solid crystal faces 311 to thereby improve the substrate. The solid crystal density of 3 further enhances the overall luminance of the light-emitting diode package. In summary, by illuminating the LED die 4 on the plurality of solid crystal faces 311 M426144 designed by the die bonding unit 31 and undulating from the bottom surface of the substrate 3, the light absorption can be reduced. The optical problem of interference also enhances the brightness enhancement effect by the use of the reflective slanting surface 312, so that the illuminating brightness of the novel high-brightness light-emitting diode package device can be greatly improved, so that the object of the present invention can be achieved. However, the above is only the preferred embodiment of the present invention, and the scope of the present invention cannot be limited thereto, that is, the simple equivalent change and modification made by the present invention in the scope of the patent application b and the description of the invention. , are still within the scope of this new patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view showing an early light emitting diode package structure; FIG. 2 is a top plan view showing a conventional improved light emitting diode package structure; FIG. FIG. 4 is a cross-sectional view showing a plurality of light emitting diodes included in the first preferred embodiment; FIG. 4 is a schematic cross-sectional view showing a first preferred embodiment of the present invention; Figure 5 is a top plan view showing a second preferred embodiment of the high-brightness LED package of the present invention; Figure 6 is a top plan view similar to Figure 5, illustrating the second preferred FIG. 7 is a top plan view similar to FIG. 5, illustrating another solid crystal aspect in the second preferred embodiment; FIG. 8 is a top plan view similar to FIG. Another solid crystal aspect of the second preferred embodiment 10 M426144 is illustrated; and FIG. 9 is a cross-sectional view similar to FIG. 4, illustrating another solid crystal in the novel high brightness LED package device. Aspect. 11 M426144 [Explanation of main component symbols] 1 ....... ...light-emitting diode package 22.......light-emitting one-pole grain structure 23....... package adhesive 11...... ...substrate 3 ···•...substrate 12...light-emitting one-pole crystal 3 1.............solid-crystal unit 13...package adhesive 311A·· Surface 2 .............Improved light-emitting diode 311B ···Solid-day solar body package structure 312 ...........reflective slope 21 ... ...substrate 4 ........ Luminous - polar body 211 211 ···· ... bottom surface 5 ........ package rubber 212 ···· ... inner wall surface 6........ •• wire 213 ··· · ... package recess 12

Claims (1)

M426144 六、申請專利範圍： l —種高亮度的發光二極體封裝裝置，包含： 一基板，包括至少一固晶單元，該固晶單元具有至少 二個分別與該基板底面距離不等的固晶面；及 複數發光二極體晶粒，設置於該固晶單元上且該 日日 厚7L的每一固晶面至少固著有一個發光二極體晶粒，該等 發光二極體晶粒並與該基板電性連接，經由該基板自外部 供電時，每一發光二極體晶粒將電能轉換成光能向外界發 射。 2. 根據申凊專利範圍第i項所述之高亮度的發光二極體封裝 裝置，其中，該基板的固晶單元還具有至少一連接兩相鄰 固晶面側邊的反光斜面。 3. 根據巾請專利範圍第2項所述之高亮度的發光二極體封裝 裝置，其中，該固晶單元的反光斜面設置有至少一發光二 極體B曰粒，且肖等發《二極體晶粒與該基板電性連接，經 由汶基板自外部供電時，每一發光二極體晶粒將電能轉換 成光能向外界發射以增強該基板單位面積的發光亮度。 根據申°月專利範圍第2項所述之高亮度的發光二極體封裝 裝置其中，该等固晶面是分別排列成彼此平行的矩形平 面。 根據申。月專利I色圍第4項所述之高亮度的發光二 裝置’其令，任— ^ 任一相鄰固晶面以平行於該固晶單元的短邊 成排地電性_蹤主 π η 噼母一固Ba面上的發光二極體晶粒後再與該 基板電性連接。 .13 M426144 6. 根據申請專利範圍第4項所述之高亮度的發光二極體封裝 裝置，其中，任二相鄰固晶面以垂直於該固晶單元的短邊 成歹J地電f生串聯每一固曰曰曰面上的發光二極體晶粒後再與該 基板電性連接。 7. 根射請專利範圍第2項所述之高亮度的發光二極體封裝 裝置，其十’該等固晶面成圓形平面。 8. 根據申請專利範圍第7項所述之高亮度的發光二極體封裝 裝置，其中’每一固晶面中固著有多數成環狀排列的發光 -_極體晶粒。 9. 根據巾請專利範圍第2項所述之高亮度的發光二極體封裝 裝置，其中，該等固晶面分別排列成同心圓的環形外觀。 10. 根射請專利範圍第2項所述之高.亮度的發光二極體封裝 裝置，還包含一可透光的封裝膠材，該封裝膠材包覆在該 等發光二極體晶粒上並使該等發光二極體晶粒與外界環境 隔絕。 11·根據申請專利範圍第丨項所述之高亮度的發光二極體封裝 裝置，其巾，該基板的固晶單元具有二與該基板底面距離 不專的固晶面。 12. 根據申請專利範圍第u項所述之高亮度的發光二極體封 裝裝置，其中，該基板的固晶單元還具有一自距離該基板 底面距離較近的固晶面周緣斜向上延伸並可反射光的反光 斜面。 13. 根據申請專利範圍第12項所述之高亮度的發光二極體封 裝裝置，其中，該固晶單元的反光斜面設置有至少一發光 14 M426144 二極體晶粒，且該笪^i u ^ ’發光二極體晶粒與該基板電性連接， ’:由孩基板自外部供電時，每一發光二極體晶粒將電能轉 換成光能向外界發射以增強該基板單位面積的發光亮度。 !4.根據中請專利範圍第13項所述之高亮度的發光二極體封 裝裝置，還包含一可透光的封裝膠材，該封裝膠材包覆在 。亥等發光一極體晶粒上並使該專發光二極體晶粒與外界广 境隔絕。 1 &M426144 VI. Patent application scope: l A high-brightness LED package device comprising: a substrate comprising at least one die bonding unit, wherein the die bonding unit has at least two solids respectively ranging from the bottom surface of the substrate a crystal face; and a plurality of light-emitting diode crystals disposed on the die-bonding unit, and each of the solid crystal faces having a thickness of 7 L is fixed with at least one light-emitting diode crystal grain, and the light-emitting diode crystals The particles are electrically connected to the substrate, and when the substrate is externally supplied with power, each of the light-emitting diode crystals converts electrical energy into light energy and emits the light to the outside. 2. The high-brightness LED package of claim 1, wherein the substrate of the substrate further comprises at least one reflective slope connecting the sides of two adjacent solid faces. 3. The high-intensity light-emitting diode package device according to the second aspect of the invention, wherein the reflective slope of the solid crystal unit is provided with at least one light-emitting diode B-particle, and Xiao et al. The polar body die is electrically connected to the substrate, and each of the light emitting diode grains converts electrical energy into light energy to be emitted to the outside to enhance the light emitting brightness per unit area of the substrate. According to the high-intensity light-emitting diode package device of the second aspect of the invention, wherein the solid crystal faces are rectangular planes which are respectively arranged in parallel with each other. According to the application. The high-brightness light-emitting device of the fourth aspect of the patent of the patent of the present invention, which allows any adjacent solid crystal surface to be electrically parallel to the short side of the die-bonding unit. The light-emitting diode crystal grains on the surface of the η 噼- a solid Ba are electrically connected to the substrate. The high-intensity light-emitting diode package device according to claim 4, wherein any two adjacent solid crystal faces are perpendicular to the short side of the die-bonding unit. The light-emitting diode crystal grains on each solid surface are connected in series and then electrically connected to the substrate. 7. The high-intensity light-emitting diode package device according to the second aspect of the patent application, wherein the solid surface is formed into a circular plane. 8. The high-brightness light-emitting diode package device according to claim 7, wherein a plurality of luminescence---polar crystal grains are arranged in a ring shape in each of the solid crystal faces. 9. The high-brightness light emitting diode package of claim 2, wherein the solid crystal faces are respectively arranged in a concentric circular annular appearance. 10. The high-brightness LED package device described in the second paragraph of the patent application, further comprising a light-transmissive encapsulant material coated on the light-emitting diode crystal grains And so that the light-emitting diode crystal grains are isolated from the external environment. The high-brightness light-emitting diode package device according to the above aspect of the invention, wherein the solid crystal unit of the substrate has two solid crystal faces which are not spaced apart from the bottom surface of the substrate. 12. The high-brightness LED package of claim 4, wherein the substrate of the substrate further has a periphery of a solid crystal surface that is closer to a bottom surface of the substrate and extends obliquely upward. A reflective bevel that reflects light. The high-brightness LED package device according to claim 12, wherein the reflective slope of the die bonding unit is provided with at least one light-emitting 14 M426144 diode crystal grain, and the 笪^iu ^ 'The light-emitting diode die is electrically connected to the substrate, ': When the child substrate is supplied from the outside, each light-emitting diode die converts electrical energy into light energy and emits it to the outside to enhance the brightness of the substrate per unit area. . 4. The high-intensity light-emitting diode package according to claim 13 of the patent application, further comprising a light-permeable sealing material, the package rubber being coated. The luminescent body of the illuminating body and the crystal of the luminescent diode are isolated from the outside world. 1 &
TW100214247U 2011-08-02 2011-08-02 A high brightness light-emitting diode package structure TWM426144U (en)

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TWI724554B (en) * 2019-09-19 2021-04-11 大陸商瑞儀光電（蘇州）有限公司 Light source structure, backlight module and display device

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CN107068666A (en) * 2017-04-21 2017-08-18 蒋雪娇 The package structure for LED and light fixture of thermal diffusivity can be improved

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI724554B (en) * 2019-09-19 2021-04-11 大陸商瑞儀光電（蘇州）有限公司 Light source structure, backlight module and display device
US11009651B2 (en) 2019-09-19 2021-05-18 Radiant Opto-Electronics (Suzhou) Co., Ltd. Light source structure, backlight module and display device

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