TWM424614U - LED substrate and LED - Google Patents

Abstract

A light emitting diode (LED) substrate includes a sapphire substrate which is characterized by having a surface consisting of hexagonal pyramid (no slant turn), wherein a pitch of the hexagonal pyramids (no slant turn) is less than 10 μm. Each of the hexagonal pyramids (no slant turn) has a first base angle and a second base angle along symmetrical cross-section, wherein the second base angle is larger than the first base angle, and the second base angle is form 50° to 70°. This LED substrate has high light-emitting efficiency.

Description

And a second ohmic electrode contacting the second semiconductor layer. In another embodiment of the present invention, the first semiconductor layer, the “layer and the second semiconductor layer comprise a ΙΙΙ·ν family semiconductor, such as a conductor. In another embodiment of the present invention, the above One and two ohms + poles are contained from nickel, lead, cobalt, iron, titanium, copper, ruthenium, gold, rhenium, tungsten, and

At least one alloy or a multilayer film of a group of indium, button, silver, and oxides or nitrides thereof. σ, is an alloy selected from the group consisting of the above-mentioned first and second ohmic electrodes, silver, aluminum, or the structure based on the above-mentioned creation. Basically, a plurality of non-folding cone-shaped sapphire substrates are used as the filament surface, so that the scattering of light can be increased by the six faces of the hexagonal cone without turning, so as to improve the light-emitting efficiency of the substrate.

To make the above-described features and advantages of the present invention more comprehensible, the following detailed description of the embodiments and the accompanying drawings are set forth below. [Embodiment] FIG. 1 is a perspective view of a light-emitting diode substrate according to a first embodiment of the present invention. A sapphire substrate 100 is shown in FIG. This sapphire substrate 100 includes a surface 104 comprised of a plurality of non-turning hexagonal cones 1〇2. The so-called "non-turning hexagonal cone" refers to a structure consisting of six non-turning faces close to a triangular pyramid. The pitch p of these non-turning hexagonal 5 M424614 cones 102 is less than 1 〇 _, which is between 妓〇 ΐμιη and 3 (4). The term "period" is the distance between each non-turning hexagonal cone 102. The symmetrical section of the non-turning hexagonal cone 200 has a first base angle a1 and a second base angle a2, the second base angle a2 is greater than the first base angle a1, and the second base angle a2 is between 50 degrees and 70 degrees. Between degrees; preferably between 55 and 65 degrees. a In the present embodiment, the top 1() 2a of the non-turning hexagonal pyramid 1〇2 is a pointed end, but the present invention is not limited thereto, and the top portion 102a of the non-turning hexagonal pyramid 1〇2 may also have a land surface. On the other hand, the surface 104 of the sapphire substrate includes a (〇〇〇1) plane (that is, a surface which is somewhat distributed in FIG. 1), and the (〇〇〇1) plane accounts for, for example, a projected area of the entire surface of 1〇4. 1% to 60%; preferably 10% to 30%. When the (oooi) plane occupies more than 60% of the entire surface area of 1〇4, the gain of the light output efficiency may be insufficient, but when the (〇〇〇1) plane occupies less than 10 of the entire surface 104. When it is %, it may cause difficulties in insect crystals. Fig. 2A is a perspective view showing a single non-turning hexagonal cone of the first embodiment; Fig. 2B is a schematic view showing a symmetrical section (a section of the line b_b) of the non-turning hexagonal pyramid of Fig. 2A. 2A and 2B, wherein the maximum height h譬 of the non-turning hexagonal cone 2〇〇 is proportional to the period of the non-turning hexagonal cone 200. The so-called “maximum height” is from the non-turning hexagonal cone 200. The distance from the top 202 to the bottom is 'in this embodiment, the maximum height of the non-turning hexagonal cone 2〇〇 is, for example, between Ιμιη~2μιη, preferably at 1.5μιη to 2μιη, M424614 (Light Extraction Efficiency, LEE The substrate structure of Figure 6 is superior to the substrate of the conventional platform structure in terms of luminous efficiency. In summary, the illuminating diode substrate of the present invention is a sapphire substrate composed of a plurality of non-turning hexagonal cones as a light-emitting surface, so that light scattering can be increased by the six faces of the hexagonal pyramid without turning. . Therefore, the light-emitting diode using such a light-emitting monopolar substrate will have improved light extraction efficiency. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and any person having ordinary knowledge in the art can make some changes and refinements without departing from the spirit and scope of the present invention. Therefore, the scope of protection of this creation is subject to the definition of the scope of the patent application attached. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a perspective view showing a light-emitting diode substrate according to a first embodiment of the present invention. Figure 2A shows a perspective view of a single non-turning hexagonal cone of the first embodiment. • Figure 2B is a schematic cross-sectional view of the non-turning hexagonal cone of Figure 2A. 3A to 3D are cross-sectional views showing the manufacturing process of the light-emitting diode substrate of the first embodiment. ® 4 is a schematic cross-sectional view of a light-emitting diode according to a second embodiment of the present invention. Fig. 5 is a detailed view of a substrate composed of a conventional flat-bottom structure simulating test t. Figure 6 is a detailed view of the 9 M424614 of the substrate formed by the non-turning hexagonal pyramid in the simulation test. Figure 7 is a graph showing the results of a simulation test. [Main component symbol description] 100, 300: sapphire substrate 102, 200, 308: no turning hexagonal cone 102a, 202: top 104: surface 302: oxide layer 304: hard mask 306: convex pattern 400: first semiconductor Layer 402: light-emitting layer 404 · second semiconductor layer 406: first ohmic electrode 408: second ohmic electrode a1, a2: bottom angle h: maximum height p: period

Claims (1)

M424614 κ 1 (6) Patent application scope: L kinds of light-emitting diode substrates, including a sapphire substrate, characterized in that: 5 监 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实 实The pitch of the non-turning hexagonal cone is smaller than ίο μπι, wherein the symmetric cross section of each of the 5 nautical non-turning hexagonal cones has a first base angle and A second base angle 'the second base angle is greater than the first base angle, and the second base angle is between 50 degrees and 7 degrees. 2. The light-emitting diode substrate according to claim 1, wherein the period of the non-turning hexagonal pyramid is between 〇1 μm and 3 μmη. 3. The light-emitting diode substrate according to claim 1, wherein the maximum height of the non-turning hexagonal cones is between Ιμηη and 2μιη. 4. The light-emitting diode substrate according to claim 3, wherein the maximum height of the non-turning hexagonal cones is between μ5 μm and 2 μmη. 5. The light-emitting diode substrate according to claim 2, wherein the top of each of the non-turning hexagonal cones is a flat surface or a tip end. 6. The light-emitting diode substrate of claim 1, wherein the surface comprises a (0001) plane, and the (〇〇〇1) plane occupies between 10% and 60% of a projected area of the surface. . 7. The light-emitting diode substrate of claim 6, wherein the surface comprises a (0001) plane' and the (0001) plane occupies between 10% and 30% of the projected area of the surface. 8. A light-emitting diode comprising: a sapphire substrate comprising: 11 M424614 consisting of a plurality of non-turning hexagonal cones 曰 Correction 2 De-filling 100-H-28 Each non-turning hexagonal cone has a period of less than 10 μm , in the Α 各 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , a bottom corner, and the corner of the second bottom corner - a first semiconductor layer 'on the sapphire substrate; - a light-emitting layer disposed on the first semiconductor layer; f - a semiconductor layer 'on the light-emitting layer; The ohmic electrode 'contacts the first semiconductor layer; and the second ohmic electrode contacts the second semiconductor layer. 9' is the light-emitting diode according to item g of the patent application, wherein the period of the non-turning hexagonal cone is between 〇1哗~shirt. 5. The light-emitting diode according to claim 8, wherein the maximum height of the non-turning hexagonal cone is between 1 μη 1 and 2 μιη, " II 11. As described in claim 10 The light-emitting diodes, wherein the maximum height of the non-turning hexagonal cones is between 1.5 μm and 2 μm. 12. The light-emitting diode of claim 8, wherein the top of each of the non-turning hexagonal cones is planar or pointed. 13. The light-emitting diode of claim 8, wherein the surface comprises a (0001) plane, and the (〇〇〇1) plane occupies a projected area of the surface of from 10% to 60%. 14. The light-emitting diode of claim 13, wherein the surface comprises a (0001) plane and the (0001) plane occupies 10% to 30 Å/〇 of the projected area of the surface. 15. The light-emitting diode according to item 8 of the patent application, wherein the 12 M424614 The first semiconductor layer, the light emitting layer and the second semiconductor layer comprise an m-v family semiconductor. 16. The light-emitting diode according to claim 15, wherein the III-V-based semiconductor is a gallium nitride-based semiconductor. The light-emitting diode according to claim 8, wherein the first ohmic electrode and the second ohmic electrode are contained from nickel, lead, cobalt, iron, chin, copper, lan, gold, lanthanum, At least one alloy or multilayer film selected from the group consisting of tungsten, erroneous, molybdenum, group, silver, and oxides and nitrides thereof. 18. The light emitting diode according to claim S, wherein the first ohmic electrode and the second ohmic electrode are an alloy selected from the group consisting of ruthenium, iridium, silver, and aluminum. Multilayer film. 13 M424614 M424614 Figure 2B 302 M424614 Figure 3A 308 308 308 308 Figure 3D M424614 408 M424614 Figure 6 □LEE + power Figure 7 Figure 8