TWM422651U - Plasma apparatus for the abatement of PFC emissions and plasma vortex reactor for making the same - Google Patents
Plasma apparatus for the abatement of PFC emissions and plasma vortex reactor for making the same Download PDFInfo
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五、新型說明: 【新型所屬之技術領域】 本創作係朗於半導體產麵錢化物廢氣處理裝置,特別是 關於-種全氟化物的電衆處理裝置,其利用全氟化物廢氣以切 線方式注入涡流電漿反應器内形成強烈的渴流 ,使全氟化物廢 氣及適罝水分與電漿火炬作用進行高溫反應,以徹底破壞廢氣 中的全氟化物。再利用文氏條氣塔及濕式洗務塔,將反應所產 出的酸性氣體、粒狀物去除,以達成高破壞嫌效率的目的。 【先前技術】 半導體製程廣泛地使用CF4、c2f6、NF3等全氣化合物 (PFC; Per-flu〇r〇compound)做為製程氣體,但是這些氣體僅有少 部分被使用掉,剩餘的大部分則當作廢氣排放,有造成溫室 效應的疑慮。例如’ CF4在製程中大約只使用了 5%、C2|:6大 約只使用了 30〇/〇、奶大約只使用了 6〇%、NR大約只使用了 60%、CHF3大约只使用了 4〇%、Sf:6大約只使用了 2〇%。 1997年"聯合國氣候變化綱要公約京都議定書"中,通過管 制二氧化碳C〇2、甲院⑽、氧化亞氮_、六氟化硫SFe、 氮氟碳化物HFCs及全氟化物PFCs等六種主要溫室氣體的具 體減I方案及_表。在這六種主要管繼室氣射,%、 HFCs及PFCs等主要為人造的溫室氣體成分;雖然HFCs及 PFCs不會耗損臭氧層’但皆為強效溫室氣體,具有很高的全 球溫暖化潛勢指數值(Global Warming Potential,GWP),具極長 之生命期’例如’ CR的生命期可達5_時、版的生命期 4 M422651 j 可達1〇,〇〇〇年、SFe的生命期可達32〇〇年、味的生命期可 達2,600年、NF3的生命期可達7奶年、CHF3的生命期可達270 年、c陆的生命射達4 9年。這些氟化合物都能停留在大 氣層中相當長的時間,錄大財的累積效應為不可逆的。 由於半導體設備树的製造雜日趨難,促使缝化物的 使用量也隨料導體製㈣進步快速增長,因此,產業界迫 切需要更有效麵管糖處理技術、採料_ pFCs廢氣處 理系統’以因應未來更加嚴苛之廢氣排放標準,戦環产公 害之產生。 先“ 傳統上PFCs及HFCs的處理,以使用燃燒法最有效,但 因擔心燃燒控制不當會有衍生火災的風險,乃有改用電熱法 處理的例子;但是電熱法較操作溫度及流場分佈控制不易 的影響’處理效率通常只能達到90%以下,難以達成符合嚴 苛的廢氣排放標準之要求。 使用電漿火炬的創作,也僅考慮片面的解決方案,例如, 中華民國新型專利申請案號091209744,雖提出—種全氟化物 廢氣電漿處理裝置,其特徵是引入廢氣與高溫電漿火炬直接 作用,再進入反應室内處理,其中該反應室内部係以耐火斷 熱材料構築而成,在電漿火炬加熱下,可形成高溫環境者。 並於反應室出口處設置一噴水器組,廢氣經過噴水器組降严 後,再引入一濕式洗滌塔處理後予以排放,此—濕式洗滌塔 之循環用水設有一水槽供應之。當廢氣來源所提供之全氟化 物廢氣靜壓不足時,濕式洗滌塔後端加置一風車以補足靜 壓’順利排出設計的風量值。 5 M422651 ㈣傳統賴朗為在綱魏火炬接敏,需要利 =的反應㈣餅反應,_,賴歧必須提供足夠維 持兩溫㈤如咖。〇的能量,且反應室部必須以耐火斷孰 材枓構築而成’在電漿火炬加熱τ,形成高溫環境,才能讓 獨立的反射轉具有破壞全氟化物純的能力。而且,在 高溫獨立献應錢姐絲,直接对水驗加水冷卻然 後利用濕式洗務塔洗務’此時,也需要提供足夠的冷能,才V. New description: [New technical field] The creation department is based on the semiconductor production surface waste gas treatment device, especially the perfluorinated electric power treatment device, which uses the perfluorinated waste gas to be injected in a tangential manner. A strong thirst flow is formed in the vortex plasma reactor, so that the perfluorinated exhaust gas and the suitable moisture react with the plasma torch to perform high temperature reaction to completely destroy the perfluorinated matter in the exhaust gas. The Wenshi strip tower and the wet scrubber are used to remove the acid gas and particulate matter produced by the reaction to achieve high destruction efficiency. [Prior Art] Semiconductor processes such as CF4, c2f6, NF3, etc. (PFC; Per-flu〇r〇compound) are widely used as process gases, but only a small part of these gases are used, and most of the remaining As an exhaust gas, there are doubts about the greenhouse effect. For example, 'CF4 is only used 5% in the process, C2|:6 is only used 30 〇 / 〇, milk is only used 6 〇 %, NR is only used 60%, CHF3 is only used 4 〇 %, Sf:6 is only about 2% used. In 1997, the “Kyoto Protocol of the United Nations Framework Convention on Climate Change”, through the regulation of carbon dioxide C〇2, A hospital (10), nitrous oxide _, sulphur hexafluoride SFe, nitrogen fluorocarbon HFCs and perfluorinated PFCs The specific reduction of the main greenhouse gases I plan and _ table. In these six main tube-by-chamber gas injections, %, HFCs and PFCs are mainly artificial greenhouse gas components; although HFCs and PFCs do not deplete the ozone layer, they are all powerful greenhouse gases with high global warming potential. Global Warming Potential (GWP), with a very long life period, such as 'CR' life cycle up to 5_, the life of the version 4 M422651 j up to 1〇, leap year, life of SFe Up to 32 years, the life of the flavor can reach 2,600 years, the life of NF3 can reach 7 milk years, the life of CHF3 can reach 270 years, and the life of c land reaches 49 years. These fluorine compounds can stay in the atmosphere for a considerable period of time, and the cumulative effect of the big money is irreversible. Due to the difficulty in manufacturing the semiconductor equipment tree, the use of the sewing compound is also increasing rapidly with the production of the conductor (4). Therefore, the industry urgently needs more effective surface sugar processing technology, mining _ pFCs exhaust gas treatment system to respond In the future, more stringent emission standards will be produced, and the production of pollution will occur. First, "traditional processing of PFCs and HFCs is most effective in using combustion methods. However, there is a risk of derivative fires due to fear of improper combustion control. There are examples of switching to electrothermal treatment; but electrothermal method is more sensitive to operating temperature and flow field distribution. Control of difficult impacts 'Processing efficiency can usually only reach less than 90%, it is difficult to meet the requirements of meeting the stringent emission standards. The use of plasma torch creation, only consider one-sided solutions, for example, the Republic of China new patent application No. 091209744, although a perfluorinated waste gas plasma processing device is proposed, which is characterized in that the exhaust gas and the high-temperature plasma torch are directly acted upon, and then enter the reaction chamber for treatment, wherein the interior of the reaction chamber is constructed of refractory heat-insulating materials. Under the heating of the plasma torch, a high temperature environment can be formed. A sprinkler group is arranged at the outlet of the reaction chamber, and the exhaust gas is cooled by the sprinkler group, and then introduced into a wet scrubber for treatment, and then discharged. The circulating water of the washing tower is provided with a water tank. When the static pressure of the perfluorinated waste gas provided by the exhaust gas source is insufficient, the wet type A windmill is added at the rear end of the washing tower to make up the static pressure 'smooth discharge design. 5 M422651 (4) The traditional Lailang is sensitive to the Weihu torch, and needs the reaction of the profit=(4) cake reaction, _, Laiqi must provide enough Maintain two temperatures (five) such as coffee, 〇 energy, and the reaction chamber must be constructed of fire-resistant coffin 枓 ' 'heating in the plasma torch τ, forming a high temperature environment, in order to allow independent reflection to destroy the perfluorinated pure Capability. Moreover, at the high temperature, the company is dedicated to the money, directly to the water test and then to the wet scrubbing tower. At this time, it is necessary to provide enough cold energy.
能將氣體冷卻財说行絲;_,濕式洗祕的洗滌效能 將大受影響。It can cool the gas and make it clear; _, the wet cleaning performance will be greatly affected.
本創作的全氟化物的賴處理裝置則採賴流電聚反應 器,將含有全氟化物的廢氣利用切線注入渦流電漿反應器,利 用產生的減及電敎㈣丨發的逆向献,使電漿火炬的高能 電子團旎與全氟化物與水分及氧氣充分接觸並引發快速的化 于反應,因此,不需要高能量的電源供應及高溫的反應器,就 能達成有效且徹底的破壞全氟化物的目的。此外,本創作在渦 流電装反應器之後’使用文氏騎塔及濕式洗祕,能將渦流 電漿反應器之反應產物降溫、除酸、及去除粒狀物,達成99% 至99_9%以上的破壞去除效率。 【新型内容】 本創作之主要目的在於提供一種全氟化物的電漿處理裝 置,其利用渦流電漿反應器及其後之空氣污染防治設備達成全 氟化物省能源的高效率破壞去除目的。 6 M422651 為達成前述目的’本創作所提供之全氟化物的電漿處理 裝置,包含有:一渦流電漿反應器、一電漿火炬、一文氏滌 氣塔、一洗滌液槽、以及一濕式洗滌塔;其特徵在於將多股 全氟化物廢氣收集後,加入進行反應所需的適量水分,一起 以切線方式注入渦流電漿反應器末端,在渦流電漿反應器内 形成往裝置在渦流電漿反應器另一端的電漿火炬方向旋轉的 渦流,全氟化物廢氣與高溫電漿火炬進行直接接觸後受熱膨 脹產生咼溫差氣旋渦流,再形成由電聚火炬往渦流電衆反應 器出口方向的逆向的高速喷流,使得全氟化物廢氣在渦流電 漿反應器内與具有高能量密度的電漿火炬充分混合進行化學 反應而被徹底破壞。並於渦流電漿反應器出口處設置一文氏 條氣塔,將廢氣降溫、部分除酸、去除粒狀物後,再進入一 濕式洗滌塔進行除酸處理後予以排放。文氏滌氣塔及濕式洗 條塔之循環用水設有一洗務液槽供應之。 本創作的應用範圍包含半導體及其他工業製程之全氟化 物等有害廢氣之處理,例如:SiH4、CF4、CHh、C2F6、Nh 等廢氣處理。 為使對本創作有較佳之了解,特就下列圖示為例作為本 創作之一較佳實施例說明如下。 【實施方式】 如第-圖所示’為本創作之全氟化物的電聚處理裝置之 一較佳實施例’以下並說明其原理及運作方式。 本創作之全氟化物的電漿處理装置,係一種利用全氟化 物廢氣以切線注入渦流電漿反應器30申,使其產生氣旋渦 7 M422651 流’在渦流電漿反應器30内部利用裝設於另一端之直流電漿 火炬31將全氣化物廢氣進行高溫裂解,利用文氏滌氣塔4〇 及廣式洗蘇塔絲降溫去除紐氣體及去除粒狀物,再利 用泡沐去除H 7〇將所氣流絲出來的泡沫及液滴去除的一 種全氟化_雜處理裝置。其主要設備包含:—利用切線 /主入全H化物廢氣產生渦流的渦流電聚反應器3Q、一電装火The perfluorinated treatment device of the present invention adopts a galvanic polycondensation reactor, and the exhaust gas containing perfluorinated material is injected into the eddy current plasma reactor by using a tangential line, and the reversed contribution caused by the reduction of the electric enthalpy (4) is utilized. The high-energy electron mass of the plasma torch is in full contact with the perfluorinated material and moisture and oxygen, and initiates a rapid reaction. Therefore, efficient and thorough destruction can be achieved without requiring a high-energy power supply and a high-temperature reactor. The purpose of fluoride. In addition, this creation uses the Venturi riding tower and wet scrubbing after the eddy current reactor to cool, deacidify, and remove particulate matter from the vortex plasma reactor, achieving 99% to 99_9% or more. Destruction removal efficiency. [New content] The main purpose of this creation is to provide a perfluorinated plasma processing device that utilizes a vortex plasma reactor and subsequent air pollution control equipment to achieve a high-efficiency destruction of the entire fluoride energy-saving. 6 M422651 A plasma treatment device for perfluorination provided by the present invention for the purpose of the present invention comprises: a vortex plasma reactor, a plasma torch, a Wenner scrubber, a washing tank, and a wet a washing tower; characterized in that after collecting a plurality of perfluorinated exhaust gases, adding an appropriate amount of water required for the reaction, and injecting them into a vortex plasma reactor end in a tangential manner, forming a vortex in the vortex plasma reactor The vortex in the direction of the plasma torch at the other end of the plasma reactor, the perfluorinated exhaust gas is in direct contact with the high temperature plasma torch, and then thermally expanded to generate a turbulent temperature difference cyclone vortex, which is then formed by the electrothermal torch to the vortex current reactor outlet. The reverse high-speed jet causes the perfluorinated exhaust gas to be completely destroyed by chemically reacting in a vortex plasma reactor with a plasma torch having a high energy density. A Venturi gas column is arranged at the outlet of the vortex plasma reactor to cool the exhaust gas, partially remove the acid, remove the particulate matter, and then enter a wet scrubber for acid removal treatment. The circulating water for the Venturi scrubber and the wet scrubber is supplied with a washing tank. The scope of application of this creation includes the treatment of harmful exhaust gases such as perfluorinated compounds in semiconductors and other industrial processes, such as SiH4, CF4, CHh, C2F6, Nh and other exhaust gas treatment. In order to better understand the present work, the following illustrations are taken as an example of a preferred embodiment of the present invention. [Embodiment] As shown in the drawings, a preferred embodiment of the electrofluorination processing apparatus of the present invention is described below, and the principle and operation mode thereof will be described below. The perfluorinated plasma processing apparatus of the present invention is a method for injecting a vortex plasma reactor 30 into a vortex plasma reactor by using a perfluorinated exhaust gas to generate a gas vortex 7 M422651 flow 'installed inside the vortex plasma reactor 30 At the other end of the DC plasma torch 31, the whole gasification exhaust gas is pyrolyzed, and the Wenshi scrubber tower 4〇 and the wide-type washbasin are used to cool and remove the gas and remove the particulate matter, and then use the bubble to remove the H 7〇. A perfluorinated-hetero-processing device for removing foam and droplets from the airflow. Its main equipment includes: - eddy current electropolymer reactor 3Q using tangential / main-into-H gas waste gas to generate eddy current, an electric fire
炬31、-文氏務氣塔40、-洗蘇液槽5〇、一濕式洗蘇塔6〇 及一泡沫去除器70。 一如第二騎示,職錄反應㈣是糊全氟化物廢氣 與同/皿電裝歧31直接接顺’使得全氟化物廢氣的體獅 脹產生高溫差減的顧,使得含有全氟化_廢氣能夠在 渦流電狀應器30内,與高能量電子團充分混合進行化學反 應’達成有效破壞的目的。The torch 31, the Venturi gas tower 40, the washing liquid tank 5, the wet scrubbing tower 6 and a foam remover 70. As the second ride shows, the job record reaction (4) is that the pasteurized fluoride exhaust gas is directly connected with the same / dish electric appliance dissimilarity 31, so that the whole fluorescing exhaust gas body swells to produce a high temperature difference, so that it contains perfluorination. The exhaust gas can be sufficiently mixed with the high-energy electron group in the eddy current device 30 to carry out a chemical reaction to achieve effective destruction.
㈣反應H3G設有多纽集管彳彳絲連接收集半導 體製程所產生的全氟化物絲1G。由半導體製程使用端產生 =全氟⑽廢氣1G配管與收集管n連接至渦流電漿反應器 。收集r 11可以為彳支或多支,通常以4支至8支設計, 以利減少雜絲廢齡全統_賴處雜置的數量。 每一支收錄彳彳料絲量轉分軸_⑻公升標 準狀態氣體流量’半導體製造系統操健力為4〇至2〇〇 最树見,其職可經真空_抑再接至本創作之全 ^物的錄處雜置,亦可在真妓叙前私本創作之 全氟化物的電漿處理裝置。 8 全氟化物廢氣10經多支收集管⑴皮收集至廢氣收集幹管 12後’利用水分注入口 15注人進行反應所需適量水份再一 起經氣體注入器20’由渦流電漿反應器末端34以多點切線方 式注入渦流電漿反應器30,以產生旋轉的渦流。 利用水分注入口 15注入的水量,主錄據全氟化物廢氣 的組成,依據化學反應式做推估,舉例說明其反應方程式如 下:(IV) Reaction H3G is equipped with a multi-nuclear collecting wire connection to collect the perfluorinated wire 1G produced by the semi-conducting process. Produced by the semiconductor process end = perfluoro (10) exhaust gas 1G piping and collection tube n are connected to the vortex plasma reactor. The collection r 11 can be a branch or a plurality of branches, and is usually designed in a range of 4 to 8 to reduce the number of miscellaneous miscellaneous. Each of the 彳彳 收 丝 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The recording of the whole thing can be mixed, and the plasma processing device of the perfluorinated product can be created privately before the real life. 8 The perfluorinated exhaust gas 10 is collected by the collecting pipe (1) to the exhaust gas collecting main pipe 12, and the water is injected into the water inlet 15 to take a proper amount of water for the reaction, and then passed through the gas injector 20' from the vortex plasma reactor. End 34 is injected into vortex plasma reactor 30 in a multi-point tangential manner to produce a rotating vortex. The amount of water injected by the water injection port 15 is estimated based on the composition of the perfluorinated exhaust gas according to the chemical reaction formula. The reaction equation is as follows:
SiH4 + 2〇2 Si〇2 + 2H2〇SiH4 + 2〇2 Si〇2 + 2H2〇
CF4 + 2H20-^C〇2 + 4HF CF4 + 〇2 今 C〇2 + 2F2 C2F6 + 4H20 + 1/2 〇2 ^ 6HF + 2C〇2 + H2〇 C2F6+2O2+2CO2+3F2CF4 + 2H20-^C〇2 + 4HF CF4 + 〇2 Current C〇2 + 2F2 C2F6 + 4H20 + 1/2 〇2 ^ 6HF + 2C〇2 + H2〇 C2F6+2O2+2CO2+3F2
C3F8 + 6H2O + O2 8HF + 3C〇2 + 2H2O C3F8 + 3〇2 3C〇2+ 4F2 SFe + 3H20 S02 + 6HF + 1/2 〇2C3F8 + 6H2O + O2 8HF + 3C〇2 + 2H2O C3F8 + 3〇2 3C〇2+ 4F2 SFe + 3H20 S02 + 6HF + 1/2 〇2
F2+ H2~> 2HF 由於多數PFCs在渦流電漿反應器30内進行反應後,會 报容易再聚合成最安定的化合物CR,因此,在廢氣進入滿 流電聚反應器30前’必須利用水分注入口 15注入進行反應 所需適量水份,先調節及供應進行反應所需的適當水分含 量,使PFCs能轉化成HF及C〇2才能得到較好的破壞去除效 率。利用滿流電聚反應器30的作用》CF4會在電聚的高能電 子作用下,很快進行以下反應而被破壞: θ + CF4 CF3 + F + θ e + 〇2~^0 + 0 + e M422651F2+ H2~> 2HF Since most of the PFCs react in the vortex plasma reactor 30, they are reported to be easily repolymerized into the most stable compound CR. Therefore, before the exhaust gas enters the full-flow polymerization reactor 30, it must be utilized. The inlet 15 is injected with an appropriate amount of water required for the reaction, and the appropriate moisture content required for the reaction is first adjusted and supplied, so that the PFCs can be converted into HF and C〇2 to obtain better destruction and removal efficiency. Using the function of the full-flow electropolymer reactor 30, CF4 will be destroyed by the following high-energy electrons: θ + CF4 CF3 + F + θ e + 〇2~^0 + 0 + e M422651
CF3+O^COF2+F CF4是很安定的化合物,進行%的熱解需要供應大量能 量’而且’需要很局的活化能才能進行;CF4進行熱解反應的 反應式及反應熱ΔΗ如下: CF4 C (soot) + F2 ΔΗ = +916 kJ/mol CF4在電紅應n内與氧氣進行氧化反應仍為吸熱反CF3+O^COF2+F CF4 is a very stable compound. The pyrolysis of % requires a large amount of energy to be supplied, and 'requires a very large amount of activation energy to carry out. The reaction formula and reaction heat of CF4 for pyrolysis reaction are as follows: CF4 C (soot) + F2 ΔΗ = +916 kJ/mol CF4 is oxidized in the red and should be the endothermic reaction
應,其反應熱ΔΗ如下: CF4+〇2-> CO2 + 2F2 ΔΗ = +585 kJ/mol CR與氧氣及航進行氧化反應,為放熱反應,進行反應 會釋放反應熱ΔΗ如下: CF4 + 〇2 + 2H2 + C〇2 + 4HF ΔΗ = -557 kJ/mol 全氟化物廢氣在㈤流電聚反應器3〇内形成由渦流電聚反 應器末端34往賴岐31方向流動縣速雜的渦流,然 後,全氣化物廢氣與電襞火炬31直接接觸後,開始引發化學 反應,使全氟化物的化學鍵結被徹底破壞,並與水分子或氧The reaction heat ΔΗ should be as follows: CF4+〇2-> CO2 + 2F2 ΔΗ = +585 kJ/mol CR is oxidized with oxygen and aeronautical, and is an exothermic reaction. The reaction will release the heat of reaction ΔΗ as follows: CF4 + 〇2 + 2H2 + C〇2 + 4HF ΔΗ = -557 kJ/mol The perfluorinated exhaust gas forms a vortex flowing in the direction of the vortex electropolymer reactor end 34 to the Laiyan 31 in the (5) galvanic polycondensation reactor. Then, after the fully vaporized exhaust gas is in direct contact with the electric torch 31, a chemical reaction is initiated to completely destroy the chemical bond of the perfluorinated compound, and with water molecules or oxygen.
氣結合形成-些簡科於處理的分子或原子,同時使氣體溫 度快速升高’體積膨脹,進喊生速度更快的高溫差氣旋渴 流36。 高溫差氣旋渦流36到達渦流電毁反應器頂部35後,受到 電聚火炬31 »’使域化物與減及水產生化學反應,氣 體的體積受化學反應及溫度升高的影響而快速職,並受電 漿火炬31的氣流引導後形成由電漿火炬31往渦流電漿反應 器出口方向的高速·噴流37,使得全氟化物廢氣在滿流電 10 M422651 衆反應器30内能夠與高能量密度的電襞 古处旦 電子團充分混合、進行化學反應,產生c〇F2、HF、 C〇2等燃燒產物,而被徹底破壞。 位於渴流«反應n 3〇最前財心位置的直流電聚火炬 31,是_鋪高頓、高電流的錢魏供應洲使電浆火 炬31產找弧_產生高溫高能量密度的觀的賴,將廢 氣中的全氟化物加熱分解、原子化、離子化,使全氟化物的 化學鍵結被徹底破壞’並與水分子或魏結合形成一些簡單 易於處獅分子絲子,如魏、—氧化碳、二氧化碳和氟 化氫等’科纽合絲賴錢複_分子,達成徹底破 壞的目的。 — 電漿火炬31可以採用直流電力供應產生高溫電衆之非傳 輸型直流電漿火炬。 屑流錄反應器3G是善用賴火炬31及其產生的高能量 電子團與全貌化物廢氣充分混合、進行化學反應,因此,並 • +需建立均勻的溫度場,所以可以使用較低功率的電漿火炬 . 卩可達到所而的破壞效率。以-般四組收集管11單位時 處〇〇 L/min的5又備為例,傳統的電漿火炬約需使用_ 1率’使用本創作之渴流電襞反應器3〇則只需使用4〜瞻 功率的電漿火炬31即可。 由於在渴流賴反應器3〇内,以切線注入的全統物廢 未被加熱’會沿著反應器外壁32以渦旋方式流動,因 陶咨t反應器外壁32溫度不會太高’只需使用石英玻璃或 _ b夕加保護金屬即可,可以使得設備製作簡單化。 M422651 器 為達到較佳的混合效果,本創作所提供之渦流電聚反應 具有下列之基本結構設計及尺寸的設定 ^為了讓全氟化物廢氣1G麵流電漿反絲加内能產 生穩定的顺且避免減物沉積,氣體注人㈣的氣體流 速應維持10 m/s以上。The combination of gas forms some molecules or atoms that are treated at the same time, while the temperature of the gas rises rapidly, the volume expands, and the high temperature difference cyclone flow 36 is faster. After the high temperature difference cyclone vortex 36 reaches the top 35 of the eddy current electrolysis reactor, it is subjected to the chemical reaction of the electropolymerized torch 31»' to cause the domain compound to react with the water, and the volume of the gas is rapidly affected by the chemical reaction and the temperature rise, and After being guided by the gas flow of the plasma torch 31, a high-speed spray stream 37 from the plasma torch 31 to the vortex plasma reactor outlet is formed, so that the perfluorinated exhaust gas can be combined with a high energy density in the full-flow 10 M422651 reactor 30. The electrophoresis of the electrons is fully mixed and chemically reacted to produce combustion products such as c〇F2, HF, and C〇2, which are completely destroyed. The DC power torch 31 located in the thirsty flow «reaction n 3 〇 〇 财 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The perfluorinated impurities in the exhaust gas are heated, decomposed, atomized and ionized, so that the chemical bonds of the perfluorinated compounds are completely destroyed, and combined with water molecules or Wei to form some simple and easy-to-wear lion molecular filaments, such as Wei and carbon monoxide. , carbon dioxide and hydrogen fluoride, etc. 'Kinuosi Lai Qianfu _ molecules, to achieve the purpose of complete destruction. — The plasma torch 31 can be powered by a direct current power supply to produce a non-transmission type DC plasma torch for high temperature electricity. The chip flow recorder 3G is a good use of the torch 31 and the high-energy electron mass generated by it to fully mix and react with the exhaust gas of the full-form product gas. Therefore, it is necessary to establish a uniform temperature field, so that a lower power can be used. Plasma torch. 卩 can achieve the destruction efficiency. For example, the conventional plasma torch is about _1 rate. Use 4 to the power of the plasma torch 31. Since the entangled waste is not heated in the 3 Torring reactor, it will flow in a vortex along the outer wall 32 of the reactor, because the temperature of the outer wall 32 of the taoqi reactor is not too high. Simply use quartz glass or _ b to protect the metal, which can make the device simple. In order to achieve better mixing effect, the vortex electropolymerization provided by this creation has the following basic structural design and size setting. ^In order to make the perfluorinated exhaust gas 1G surface flow plasma anti-filament plus internal energy can produce stable cis And to avoid the deposition of the reduced matter, the gas flow rate of the gas injection (4) should be maintained above 10 m / s.
的 2·渴流電漿反應器3〇為圓柱形結構,其最適長度L 為内控0的1至3倍。亦即,l/D = 1〜3。The 2's thirsty plasma reactor 3 is a cylindrical structure, and its optimum length L is 1 to 3 times that of the internal control 0. That is, l/D = 1 to 3.
3· 〜電漿反應11 3G的最適ih α直徑d約為内徑D 1/2 至 1/3 倍。亦即 ’ d/D = 1/3〜μ。3· ~ Plasma reaction 11 3G The optimum ih α diameter d is about D 1/2 to 1/3 times the inner diameter. That is, 'd/D = 1/3~μ.
由於在渴机電梁反應器3〇内經電漿火炬31處理後的廢氣 溫度極高,並產生統鮮·氣體,,在渦流電聚反 應器30 一處設置法_接口 33與—文氏賊塔奶連接, 由=氣體合物之轉妓溫度影_著,若溫度 過同則命解度降低’因此,彻液體喷嘴42將洗騎μ喷 入文氏聽塔4G巾,將廢氣降溫並溶解部分HfI等酸性氣體, 同時;條除从帶之ϋ體微粒,如含魏末等;文麟氣塔奶 中有文氏管43 ’可使文氏條氣塔4〇能在減壓條件下操作; 文氏條祕4G底部财_板44,可聽洗驗受壓產生波 動,影響濕式洗滌塔60之操作。 濕式洗滌塔60内部有提供巨大接觸表面積的填充材料 64 ’洗騎_洗齡^嘴61噴灑於填充材料之上,形成氣 體與液體的接麵撕運動,似ijf量傳遞親行^填充材 # 64 U裝有_器63 ’其上則為除霧器洗膝喷嘴62,可 將大。P/7 Ik著氣流被帶上麵水滴去除掉;洗驗喷嘴61、 12 M422651 除霧器洗滌喷嘴62及液體噴嘴42由洗滌液循環泵浦51提供 洗滌液。Since the temperature of the exhaust gas treated by the plasma torch 31 in the thirst electromechanical beam reactor is extremely high, and the fresh gas is generated, the method is provided at the vortex electropolymer reactor 30. The thief tower milk connection, by the = gas compound transition temperature shadow _, if the temperature is too much, then the degree of resolution is reduced' Therefore, the liquid nozzle 42 sprays the washing ride into the Wenshi listen tower 4G towel to cool the exhaust gas And dissolve some acid gases such as HfI, at the same time; remove the particles from the corpus callosum, such as containing Weiwei; Wenlin tube milk in the Wenlin tube 43 ' can make the Wenshi strip tower 4 〇 decompression Under the conditions of operation; Wen's article secret 4G bottom financial_board 44, audible washing pressure caused by fluctuations, affecting the operation of the wet scrubber 60. The wet scrubber 60 has a filling material 64 for providing a large contact surface area. The washing and washing machine is sprayed on the filling material to form a joint movement of the gas and the liquid, and the ijf amount is transmitted to the prosthetic filler. # 64 U Installed _ 63 ' on top of it is the defogger wash knee nozzle 62, which can be large. The P/7 Ik airflow is removed by the water droplets on the belt; the washing nozzles 61, 12 M422651 mist eliminator washing nozzle 62 and the liquid nozzle 42 are supplied with washing liquid by the washing liquid circulation pump 51.
廢氣在經過濕式洗滌塔60時,能將氟化氫HF等酸性氣 體吸收’在處理含氟化氫廢氣產物時,洗滌液可以加驗 NaOH,使喷出之水霧可以中和氟化氫等酸性。依現況而言, 在科學園區設有廢水處理場的廠商,通常其廢水處理廠均有 能力處理含氟廢水,因此,本創作之洗滌液槽5〇之排放水 54可做批次排放或連續排放至廢水處理場即可。 由於半導體製程常在低壓條件操作,因此,濕式洗滌塔 6〇常會產生大量泡床,很難利用除霧器63 $全去除,會伴隨 排氣排目此’糊作在_絲塔㈤後設械沐去除器 70 ’利用瞒速的馬達71帶_,讀盤%,伽離心力將泡 沐去除’使得管歧下游賴不致遭受姉物污㈣困擾; 分離後驗體及触_流管線72伽洗騎槽5〇。 泡沫去除器70後端設置—剌風車75以補足㈣負麼, 使廢氣能順利排出。When the exhaust gas passes through the wet scrubber 60, the acid gas such as hydrogen fluoride HF can be absorbed. When the hydrogen fluoride waste gas product is treated, the washing liquid can be added with NaOH, so that the sprayed water mist can neutralize the acidity such as hydrogen fluoride. According to the current situation, there are manufacturers of wastewater treatment plants in the Science Park. Usually, their wastewater treatment plants have the ability to treat fluorine-containing wastewater. Therefore, the discharge water of the washing tank 5 of this creation can be batch discharged or continuous. Discharge to the wastewater treatment plant. Since the semiconductor process is often operated under low pressure conditions, the wet scrubber 6 often produces a large number of bubble beds, and it is difficult to use the demister 63 $ full removal, which is accompanied by the exhaust gas arrangement, which is after the _ wire tower (five) The mechanical remover 70' utilizes the idle motor 71 with _, the read disk %, the gamma centrifugal force removes the bubble, so that the downstream of the pipe is not subject to the contamination (four); the separation of the post-test body and the contact flow line 72 Garbage rides 5 feet. The rear end of the foam remover 70 is provided - the windmill 75 is used to make up (four) negative, so that the exhaust gas can be smoothly discharged.
、廢氣中的王氟化物PFcs在設備巾的破壞去除效率卿, :二IS叹備出口端化合物CmFn的總質量除以進入設備的 化s物CmFn的總質量計算之: DRE = f 1 一5i5^n^n)〇ut\ I 帽 _ 其中fi為化合物CmFn的$ | 〇〇 .. 氟化物__1 _ == S·。本創作之全 壞去除效率可達·至99.9%。風且成的王乱化物廢氣,破 13 M422651 以上說明對本創作而言只是說明性的 ,而非限制性的, ^領域普通技術人員理解,在獨辦請專利細所限定的 j和細的情況下,可作岭多修改、變化或等效,但都 :洛入本創作的φ請專利細可限定的範圍之内。 【圖式簡單說明】 第圖.本創作之全氟化物廢氣電漿處理裝置 第二圖:本創作之渦流電漿反應器 【主要元件符號說明】 10 全氟化物廢氣 11 收集管 12 廢氣收集幹管 15 水分注入口 20 氣體注入器 30 渦流電漿反應器 31 電漿火炬 32 反應器外壁 33 法蘭連接口 34 渦流電漿反應器末端 35 渦流電漿反應器頂部 36 氣旋渦流 37 高速氣旋喷流 38 直流電源供應 40 文氏滌氣塔 41 洗務液 14The removal efficiency of the king fluoride PFcs in the exhaust gas in the equipment towel is clear: the total mass of the second IS squirting end compound CmFn is calculated by dividing the total mass of the s material CmFn entering the equipment: DRE = f 1 - 5i5 ^n^n)〇ut\ I Cap _ where fi is the compound CmFn $ | 〇〇.. Fluoride __1 _ == S·. The overall removal efficiency of this creation can reach 99.9%. The wind and the king of the waste gas, broken 13 M422651 The above description is only illustrative and not restrictive for this creation, ^ the general knowledge of the field understands the j and the fine case defined in the patent Under the ridge can be modified, changed or equivalent, but both: Luo into the scope of the creation of the φ patent can be limited. [Simple description of the diagram] The first picture of the perfluorinated waste gas plasma treatment device of the present invention: The eddy current plasma reactor of the present invention [Signature of main components] 10 Perfluorinated exhaust gas 11 Collection pipe 12 Exhaust gas collection Tube 15 Moisture injection port 20 Gas injector 30 Vortex plasma reactor 31 Plasma torch 32 Reactor outer wall 33 Flange connection port 34 Vortex plasma reactor end 35 Vortex plasma reactor top 36 Vortex vortex 37 High velocity cyclone jet 38 DC power supply 40 Venturi scrubber 41 Washing fluid 14
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TWI455755B (en) * | 2012-04-23 | 2014-10-11 | Resi Corp | Vortex plasma reactor for the abatement of pfcs emission |
TWI613002B (en) * | 2017-04-20 | 2018-02-01 | Washing tower structure |
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TWI455755B (en) * | 2012-04-23 | 2014-10-11 | Resi Corp | Vortex plasma reactor for the abatement of pfcs emission |
TWI613002B (en) * | 2017-04-20 | 2018-02-01 | Washing tower structure |
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