TWM422161U - Improved diode structure - Google Patents

Improved diode structure Download PDF

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Publication number
TWM422161U
TWM422161U TW100215395U TW100215395U TWM422161U TW M422161 U TWM422161 U TW M422161U TW 100215395 U TW100215395 U TW 100215395U TW 100215395 U TW100215395 U TW 100215395U TW M422161 U TWM422161 U TW M422161U
Authority
TW
Taiwan
Prior art keywords
electrode
length
diode
predetermined length
item
Prior art date
Application number
TW100215395U
Other languages
English (en)
Inventor
Yuan-Feng Lu
Original Assignee
Ks Terminals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ks Terminals Inc filed Critical Ks Terminals Inc
Priority to TW100215395U priority Critical patent/TWM422161U/zh
Priority to CN201120338774.7U priority patent/CN202307904U/zh
Publication of TWM422161U publication Critical patent/TWM422161U/zh
Priority to JP2012004369U priority patent/JP3178744U/ja
Priority to US13/566,220 priority patent/US20130043580A1/en

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49562Geometry of the lead-frame for devices being provided for in H01L29/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)
  • Rectifiers (AREA)

Description

M422161 2011年12月曰修正替換頁 五、新型說明: 【新型所屬之技術領域】 本創作係有關於一種運用表面黏著技術的被動元件,尤其是關於能提 昇二極體本身散熱效能的改良結構。 【先前技術】 M極體是目則各種電子系統中最基本的組成元件之一,藉由其電流只 此早向流_特性進行整流,常應用於電子產品上。於習知技術中,二極 ,由本體及二自本體内部向外延伸的電極所構成,習用製程的本體厚度 容易佔用空間,且兩電極也因著電路板插孔設計為長圓柱形體便於插設焊 接,但會有散熱不佳的問題產生嗜來為了使整體厚度減少以節省空間, 因此將本體利用表面黏著技術改製成板狀,並使兩電極以薄片狀與本體結 ^ ’兩電極只需具備足解曲的短長度以有效達成節省體積1此在電極 制,以便於在進^曲後配合連接至電路板上能夠減少 的佔的二極體在電流流動時,由於二極體__極為了減少空間 ’ 彎曲,反而關電極的長度,且電極 =:難。二極截繊熱-,則會導致二極趙承二:造 如何針對上述f知二極體結構所存在之散熱缺點 改良讓一極體的散熱效能能發揮到最高,並減少因過熱 實為相關業界所需努力研發之目標。 .....a。題’ 【新型内容】 為克服上述缺點,本創作提供一種二極體改良結構 電極及第二電極。第—電極和第二電極皆為扁平板狀,且各自=二内一 M422161 2011年12月日修正替換頁 部穿過本體的縱向的兩端向外水平延伸預設長度,其預設長度大於本體的 縱向長度。 因此本創作之主要目的在於提供一種扁平板狀電極結構,其具備大於 -定長度之雜,以及擴展電極向外伸展細之_,將得明加二極體 的散熱面積’加強二_之散熱鱗,鱗決二極體散鮮良造成電極短 路之問題。 【實施方式】 由於本創作係揭露-種二極體改良結構,其中所利用之二極體原理 已為相關技術領域具有通常知識麵_瞭,故以下文中之綱,不則 ί整描述。_ ’以下文中所聰之圖式,絲達與本創作概有關之7 心,並未亦不需要依據實際尺寸完整繪製,合先敘明。 1Α,錄據本創作所提出之第—健實施例,為—種二極爱 改良結構。本實施例包括本體1〇、第一電極2〇及第二電極%。 «> 1B ^ 1C J 0 1B 1A t A ^ Λ 开1A令一極體的俯視暨局部透視狀態圖,本體10為扁平_ 穿過料二電極3G料扁平的板狀,私自從本體10的内匈 預执長产,’向兩端’且穌體1G的縱向兩端向外水平延伸預設長度dl, 極Γο在本:^本體10的縱向長度d2的二倍。第一電極20與第二電 此上下相對,此相對的一端夾持第,的其:-端被 30向外延伸長度必須大於一定之長戶〃 電極20及弟二電極 3〇的預設編分別大於本體^縱最^為第一電極2〇與第二電極 極20及第二電極3〇的長度延長 & #一倍以上。透過第一電 體之散熱效騎加,使二麵^的^在本體^卜的面積,將可使二極 而使晶粒B燒毁,第—電極如’」,^加速擴散,避免二極體因高溫 〃第—電極3〇也就不會發生短路的問題。 M422161 頭·麥亏圖2 職據本創作所提出 "修ΐ£替換頁 良結構。本實施例主要係包括本體1〇,=佳實_,為-種二極體改 體10,為圓柱形體,本體10,與第 電及第二電極30。本 因此,本創作所提出的二極㈣^以費4。 延展一技長度,將得以增加二極體端扁平板㈣極向外 熱功能,以解決二贿散熱不良極短^積,加強二極體之散 以上所述僅為本創作之較 路之問心 因此其他未脫離本創作所揭/人士應可明瞭及實施, 含在申請專觀财。 70的等效改變絲飾’均應包 【圖式簡單說明】 圖1A為本創作提出之第—實補之二極體的立體圖。 圖1B為本創作提出之圖
A之A至A方向之二極體的剖視圖。 ^提出之圖1八之二極體的俯視暨局部透視狀態圖 圖為本創作提出之第二實施例之二極體的立體圖。 【主要元件符號說明】 本體 10, 10’ 第一電極 20 第二電極 30 電極預設長度 dl 本體縱向長度 d2

Claims (1)

  1. 2011年12月日修正替換頁 六、申請專利範圍·· 1.種-極體改良結構,包含有一本體、一第一電極及一第二電極, 其特徵在於: 該第電極與該第二電極皆為扁平的板狀,且各自於該本體的内部穿過 該本體的縱向㈣端向外水平延伸—預設長度,該預設長度不小於該本 體的縱向長度。 ^形根據申請專利範圍第!項的二極體改良結構,其中該本體呈扁平的 •根據申請專利範圍第!項的二極體改良結構,其中該 中物晒第2絲3 _’改_ ^ ^與該第二電極在該本體内為水倾置,且為上下鄉。料-電 5.根據申請專利範圍第2或第3項的二拖體改良。 電 極與該第二電極的預設長度大於該本體的縱向長度的、中該第
TW100215395U 2011-08-18 2011-08-18 Improved diode structure TWM422161U (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW100215395U TWM422161U (en) 2011-08-18 2011-08-18 Improved diode structure
CN201120338774.7U CN202307904U (zh) 2011-08-18 2011-09-05 二极管改良结构
JP2012004369U JP3178744U (ja) 2011-08-18 2012-07-18 ダイオード
US13/566,220 US20130043580A1 (en) 2011-08-18 2012-08-03 Diode structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW100215395U TWM422161U (en) 2011-08-18 2011-08-18 Improved diode structure

Publications (1)

Publication Number Publication Date
TWM422161U true TWM422161U (en) 2012-02-01

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TW100215395U TWM422161U (en) 2011-08-18 2011-08-18 Improved diode structure

Country Status (4)

Country Link
US (1) US20130043580A1 (zh)
JP (1) JP3178744U (zh)
CN (1) CN202307904U (zh)
TW (1) TWM422161U (zh)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108540086A (zh) * 2018-01-18 2018-09-14 浙江人和光伏科技有限公司 一种太阳能电池接线盒的导电模块

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NL276298A (zh) * 1961-04-03 1900-01-01
JP2747634B2 (ja) * 1992-10-09 1998-05-06 ローム株式会社 面実装型ダイオード
US6307755B1 (en) * 1999-05-27 2001-10-23 Richard K. Williams Surface mount semiconductor package, die-leadframe combination and leadframe therefor and method of mounting leadframes to surfaces of semiconductor die
US7095101B2 (en) * 2000-11-15 2006-08-22 Jiahn-Chang Wu Supporting frame for surface-mount diode package
US6791172B2 (en) * 2001-04-25 2004-09-14 General Semiconductor Of Taiwan, Ltd. Power semiconductor device manufactured using a chip-size package
US6630726B1 (en) * 2001-11-07 2003-10-07 Amkor Technology, Inc. Power semiconductor package with strap
JP2004079760A (ja) * 2002-08-19 2004-03-11 Nec Electronics Corp 半導体装置及びその組立方法
JP4338620B2 (ja) * 2004-11-01 2009-10-07 三菱電機株式会社 半導体装置及びその製造方法
CN100435324C (zh) * 2004-12-20 2008-11-19 半导体元件工业有限责任公司 具有增强散热性的半导体封装结构
JP4262672B2 (ja) * 2004-12-24 2009-05-13 株式会社ルネサステクノロジ 半導体装置およびその製造方法
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Also Published As

Publication number Publication date
JP3178744U (ja) 2012-09-27
CN202307904U (zh) 2012-07-04
US20130043580A1 (en) 2013-02-21

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