M420851 五、新型說明： 【新型所屬之技術領域】 本創作係械-種結顧單、高發光二鋪亮度、高效 率、高良率之發光二極體封裝結構。 【先前技術】 近年來’目為發光二極體製造技_快速進步使得發光 二極體的發光效率增加。因此，發光二極體開始在照明領域上 應用’例如赠光二極體製造的手電筒或縣二極體的汽車頭 燈。 習知的發光二極體封裝方式，為了要讓發光二極體所產生 =光可以較有效率的集帽特灯向，將發光二極體之晶片固 疋在具有凹陷之金屬板内。因為金屬板凹陷内的侧壁可以將 讓發光二極體所產生的光導向特定方向。參照第丨圖，其繪示 習知的-種發光二極體封裝結構的剖面圖。發光二極體晶片& 固定於金屬板b的凹陷c内。金屬板匕具有快速散熱的功效， 使發光二極體晶片a所產生的熱可以經金屬板b #速散去。此 外，金屬壁可簡魏二極體晶片a所產生 的光導向特定方向。 然而，上述的金屬板b的凹陷c常以CNC機械加工的成 型，凹陷c的内壁具有加工的紋路不利反射，且加工成本高、 良率低。而旦，印刷電路板d不易準確的與金屬板b的凹陷c 對位。因此，需要_種更創新的職轉以解決題。 【新型内容】 难 本創作之主要目的在提供—種結構簡單、高發光二極體亮 3 度、效率、良率之發光二極體封裝結構。 為達上述之目的，本創作所設之—種發光二極體封裝結 構’包括一鏡面金屬層、一銅箱基板、一發光二極體晶片及— 封X材料’其巾鞠絲板絲合練面金朗上，且該銅荡 基板上成形有—孔洞，使部份鏡面金屬層可被暴露於外，且該 ,基板姆於·之_上係設有—f，該發光二極= 曰曰片固疋於上述被暴露於外之部份鏡面金屬層上而該封裴材 料用以覆蓋於孔社，以將該發光二_晶#封閉於内。 實施時’該銅箔基板上係增設有一第二銅箔基板，且該第 二銅箔基板對應於該孔洞係同樣設有一缺口，使部份鏡面金屬 層依舊可被暴露於外，❿該第二銅箱基板相對於缺口之内壁上 亦設有一電鍍層。 實施時，該電鍍層係為一電鍍銀。 實施時，該鏡面金屬層係為一鏡面I呂。 實施時’該銅箔基板係以黏合方式結合於鏡面金屬層上。 為進一步了解本創作’以下舉較佳之實施例，配合圖示、 圖號’將本創作之具體構成内容及其所達成的功效詳細說明如 后： 【實施方式】 請參閱第2圖，圖式内容為本創作發光二極體封裝結構之 實施例’其係由一鏡面金屬層1、一銅箔基板2、一發光_ 極體晶片3及一封裝材料4所組成。 該鏡面金屬層1係為一鏡面鋁’該銅箔基板2係以黏合方 式結合於鏡面金屬層1上，且該銅箔基板2上成形有—孔洞 21 ’使部份鏡面金屬層1可被暴露於外’且該銅箔基板2相對 M420851 於孔洞21之内壁上係設有一電鍍層22，該電鍍層22係為— 電鍍銀’該發光二極體晶片3固定於上述被暴露於外之部份鏡 面金屬層1上，而該封裝材料4用以覆蓋於孔洞21上，以^ 該發光二極體晶片3封閉於内。 因此，實施時，該鏡面金屬層i由於具有良好的導教性， 故可將固定於其上的發光二極體晶片3所產生的熱快速傳導 射卜’而發光二極體晶片3可經打線的製程將導線31與銅落 基板2上的電極連接’最後將封裝材料4覆蓋於孔洞2ι上， • 以將該發光二極體晶片3封閉於内。該封裝材料4可以是環氧 樹脂、壓克力、矽膠或上述材料的組合。 因此’透過本創作之設計，直接在銅板2上相對於孔 洞21之内壁上係設有一作為反射用途之電鐘層烈，使透過電 鐘層22而幫助反射率之提高’故無須如習知技術需在金屬層 上設置凹陷區來作為反射用途。 ★此外，如第3 ϋ所示，本創作於轴絲板2上可增設有 1二銅錄板5 ’使形成—錢線路結構，且該第二銅羯基 馨板5對應於該孔洞21係同樣設有一缺口 51，使部份鏡面金屬 層1依舊可被暴露於外，而該第二銅落基板5相對於缺口 51 之内壁上亦設有-電鍍層52，藉此，除可提供更加之反射效 果，在製程中導線可選擇連接在位置較低的銅荡基板2上，以 降低導線31斷裂之風險，進而提高整體之良率。 以上所述乃是本創作之具體實施例及所運用之技術手 段’根據本文的揭露或教導可衍生推導出許多的變更與修正， 若依本創作之構想所作之等效改變，其所產生之作用仍未超出 說明書及圖式所涵蓋之實質精神時，均應視為在本創作之技術 範疇之内，合先陳明。 依上文所揭紅内容，本創作射達 提供-種發光二極體封I結構，具有 <預期目的， 疑，爰依法提出新型專利申請。 /、 /、實用之價值無 【圖式簡單說明】 圖 第1圖係為習知發光二極體封裝結構之剖面 第2圖係為本創作實施例發光 第3圖係為本創作另—實施 封魏構之剖面圖。 【主要元件符號說明】 * ^一極體封裝結構之剖面圖 1 :鏡面金屬層 •銅羯基板 21 :孔洞 22 :電渡層 3:發光二極體晶片 31 :導線 4:封裝材料 5:第二銅猪基板 51 :缺口 52 :電渡層 a:發光二極體晶片 b :金屬板 c :凹陷 .d:印刷電路板M420851 V. New description: [New technical field] This creation is a kind of light-emitting diode package structure with high brightness, high efficiency and high yield. [Prior Art] In recent years, the rapid development of the light-emitting diode has increased the luminous efficiency of the light-emitting diode. Therefore, the light-emitting diodes have begun to be applied in the field of illumination, such as a flashlight made of a light-emitting diode or a car headlight of a county diode. In the conventional light-emitting diode package, in order to allow the light-emitting diode to generate light, the light-emitting diode wafer can be fixed in a recessed metal plate. Because the side walls in the recess of the metal plate can direct the light generated by the light-emitting diode to a specific direction. Referring to the figure, there is shown a cross-sectional view of a conventional light emitting diode package structure. The light-emitting diode wafer & is fixed in the recess c of the metal plate b. The metal plate has the function of rapid heat dissipation, so that the heat generated by the light-emitting diode wafer a can be dissipated through the metal plate b#. In addition, the light generated by the metal wall can be directed to a specific direction by the dummy diode wafer a. However, the recess c of the above-mentioned metal plate b is often formed by CNC machining, and the inner wall of the recess c has a processed grain which is disadvantageously reflected, and has high processing cost and low yield. However, the printed circuit board d is not easily aligned with the recess c of the metal plate b. Therefore, a more innovative job is needed to solve the problem. [New Content] Difficulties The main purpose of this creation is to provide a light-emitting diode package structure with a simple structure and high luminous diode brightness of 3 degrees, efficiency and yield. For the above purposes, the present invention has a light-emitting diode package structure including a mirror metal layer, a copper box substrate, a light-emitting diode chip, and a sealing material X. The surface of the copper surface is formed, and the copper substrate is formed with a hole so that a part of the mirror metal layer can be exposed to the outside, and the substrate is provided with -f, the light emitting diode = The ruthenium sheet is fixed on the portion of the mirror metal layer exposed to the outside, and the sealing material is used to cover the pores to seal the luminescent crystal. When implemented, a second copper foil substrate is added to the copper foil substrate, and the second copper foil substrate is also provided with a notch corresponding to the hole system, so that a part of the mirror metal layer can still be exposed to the outside. The two copper box substrates are also provided with a plating layer on the inner wall of the notch. When implemented, the plating layer is an electroplated silver. When implemented, the mirror metal layer is a mirror I. When implemented, the copper foil substrate is bonded to the mirror metal layer by bonding. In order to further understand the present embodiment of the present invention, the specific components of the present invention and the functions achieved by the following are described in detail with reference to the drawings and the drawings: [Embodiment] Please refer to Figure 2, The embodiment of the present invention is composed of a mirror metal layer 1, a copper foil substrate 2, a light-emitting body wafer 3 and an encapsulating material 4. The mirror metal layer 1 is a mirror aluminum. The copper foil substrate 2 is bonded to the mirror metal layer 1 in an adhesive manner, and the copper foil substrate 2 is formed with a hole 21 ′ so that a part of the mirror metal layer 1 can be The copper foil substrate 2 is provided with a plating layer 22 on the inner wall of the hole 21 relative to the M420851. The plating layer 22 is - electroplated silver. The light emitting diode chip 3 is fixed to the above exposed surface. Part of the mirror metal layer 1 is used to cover the hole 21 so that the LED chip 3 is enclosed. Therefore, when implemented, the mirror metal layer i has good conductivity, so that the heat generated by the light-emitting diode chip 3 fixed thereon can be quickly transmitted, and the light-emitting diode chip 3 can pass through The wire bonding process connects the wires 31 to the electrodes on the copper substrate 2, and finally covers the package material 4 over the holes 2, to close the light-emitting diode chip 3. The encapsulating material 4 may be epoxy resin, acrylic, silicone or a combination of the above. Therefore, through the design of the present design, an electric clock layer for reflection is directly attached to the inner wall of the copper plate 2, so that the reflection of the electric clock layer 22 is improved, so that it is not necessary to be known. The technique requires a recessed area on the metal layer for reflective use. ★ In addition, as shown in the third section, the present invention can add a two-copper recording board 5' to the shaft board 2 to form a money-line structure, and the second copper-base board 5 corresponds to the hole 21 The same is provided with a notch 51 so that a portion of the mirror metal layer 1 can be exposed to the outside, and the second copper substrate 5 is also provided with a plating layer 52 on the inner wall of the notch 51, thereby providing For a more reflective effect, the wires can be selectively connected to the copper substrate 2 having a lower position during the process to reduce the risk of breakage of the wires 31, thereby improving the overall yield. The above is a specific embodiment of the present invention and the technical means employed. It is possible to derive a number of changes and modifications based on the disclosure or teachings herein, and the equivalent changes made according to the concept of the present invention. The role shall not be considered to be within the technical scope of this creation, and shall be preceded by Chen Ming. According to the red content disclosed above, this creation provides a kind of light-emitting diode structure I, which has the intended purpose, doubt, and proposes a new patent application according to law. /, /, the value of the utility is not [simplified description of the diagram] Figure 1 is a cross-section of a conventional light-emitting diode package structure. Figure 2 is a light-emitting diagram of the present embodiment. The sectional view of Feng Wei. [Explanation of main component symbols] * ^ Cross section of a monolithic package structure Fig. 1: Specular metal layer • Copper germanium substrate 21: Hole 22: Electrical crossing layer 3: Light-emitting diode wafer 31: Conductor 4: Packaging material 5: Two copper pig substrate 51: notch 52: electric layer a: light emitting diode wafer b: metal plate c: recessed. d: printed circuit board