1 ^ rvkl 五、新型說明： 【新型所屬之技術領域】 本創作係關於發光二極體防斷路保護晶片。 【先前技術】 近年來，隨著發光二極體(light emitting diode，LED) 的應用逐漸流行，採用大功率發光二極體的燈具亦廣泛見 於市面上。發光二極體燈具皆由數個發光二極體串聯而 成，而功率可從小至數瓦到大至數百瓦。這種串聯式的發 光二極體具有一先天性的缺陷，即當串聯的發光二極體中 只要有一個發光二極體因為損壞而開路時，則整個發光二 極體燈具即無法正常發光。在某些做為緊急用途的照明裝 置上，例如警示燈、礦燈或應急燈等，此缺陷將會帶來嚴 重的後果。 ^為了防止串聯的發光二極體燈發生開路，習知的做法 疋採用發光二極體開路保護器。第丨圖為習知的發光二極 體開路保遵盗不意圖。習知白勺發光二極體開路保護器湖 係將數個石夕控整流器（silic〇n c〇ntr〇l發光二極體 reCtlfier ’ SCR)120分別與發光二極體110、112並聯，該 矽控整流态120其中的控制電路122可在一發光二極體 110發生帛料使二極體m導通’藉以使其他未開路的 ，光二，體112仍保持在導通狀態。然而，上㈣控整流 裔⑽^因外在的誤動作（例如：當兩極間順向電壓高於順 向轉心電壓吩、當周遭溫度高於最大容許溫度時、或當正 M42U8361 ^ rvkl V. New Description: [New Technology Field] This creation is about the LED protection circuit for light-emitting diodes. [Prior Art] In recent years, with the increasing popularity of light emitting diodes (LEDs), lamps using high-power light-emitting diodes are also widely available on the market. Light-emitting diode lamps are made up of several light-emitting diodes in series, and the power can be as small as several watts to as large as hundreds of watts. This series of light-emitting diodes has a congenital defect that when only one of the light-emitting diodes in series is opened due to damage, the entire light-emitting diode lamp cannot normally emit light. In some lighting fixtures that are used for emergency purposes, such as warning lights, miner's lights or emergency lights, this defect can have serious consequences. ^ In order to prevent the LEDs in series from being opened, it is customary to use a light-emitting diode open circuit protector. The second picture shows the conventional light-emitting diodes to keep the road open. The well-known light-emitting diode open circuit protector lake system has several stone-controlled rectifiers (silic〇nc〇ntr〇l light-emitting diode reCtlfier 'SCR) 120 connected in parallel with the light-emitting diodes 110 and 112, respectively. In the controlled rectifier state 120, the control circuit 122 can conduct a dipole in a light-emitting diode 110 to turn on the diode m, so that other unopened, light-emitting diodes 112 remain in an on state. However, the upper (four) control rectifier (10) ^ due to external malfunction (for example: when the forward voltage between the two poles is higher than the forward turn voltage pheno, when the ambient temperature is higher than the maximum allowable temperature, or when the M42U836 is positive
補无 =的電歷變動率大於額定最大變動率時）而意外造成 2二極體燈具不正常運作。此外，就-般功率為3瓦的 得習燈具而言’其工作電流可達700〜i〇〇〇mA，使 體開路保護器⑽_控整㈣⑽必須 備，大的面積’方能避免其上發生電流擁塞 _dln_及其他散熱問題。如此 矽控整流器的發弁-炻舻/ t 兀月釘甲忧用 極體燈具二:體開路保護器將非常不利於發光二 務社要—種尺寸較小且能夠順利防止發光二極體 x桃的新式的發光二極體開路保護器。 【新型内容】 作提供—種發光二極體(Light Emitting Diode， 因二：保護晶片’用以防止串聯的複數個發光二極體 護：片勺：斷路而導致整體失效’該發光二極體防斷路保 二聯匕並分:Ϊ::::發器’其中各個斷路觸發器彼 絲(-ifuse)，具有一 j體並聯，更包括：-抗炫 接至-發光二極體之—正:及::-端’其中該第-端連 極、-第二極，以及—第η:電晶體，具有-第-光二極體之正端 ° 〃該第一極連接至該發 而該第至觀熔紅該第二端， 連接至5譜光二㈣之負端。 【實施方式】If the rate of change of the electronic calendar is less than the rated maximum rate of change, the accident will cause 2 diode lamps to malfunction. In addition, for a luminaire with a power of 3 watts, its working current can reach 700~i〇〇〇mA, so that the open circuit protector (10) _ control (four) (10) must be prepared, and the large area can avoid it. Current congestion _dln_ and other heat dissipation problems occur. Such a controllable rectifier's hairpin-炻舻/t 兀月月甲甲用极体灯二2: The body open circuit protector will be very unfavorable for the light-emitting two-service society - a small size and able to smoothly prevent the light-emitting diode x Peach's new light-emitting diode open circuit protector. [New content] Provides a kind of light-emitting diode (Light Emitting Diode, because of the protection of the chip to prevent multiple LEDs in series: chip spoon: open circuit and cause overall failure) The anti-breaking road protection is divided into two parts: Ϊ:::: The hair device's each of the circuit breakers (-ifuse), which has a j-body parallel connection, and further includes: - anti-stunning to - light-emitting diode - Positive: and:: - terminal 'where the first-end pole, the second pole, and - the η: transistor, having a positive end of the --photodiode 〃 the first pole is connected to the hair The second end of the first to the red is connected to the negative end of the second light (four). [Embodiment]
下文為介紹本創作之最佳實施例。各實施例用以說明 本創作之原理，但非用以限制本創作。本創作之範圍當以 後附之權利要求項為準。 β 下文為介紹本創作之最佳實施例。·各實施例用以說明 本創作之原理，但非用以限制本創作。本創作之範圍當以 後附之權利要求項為準。 田 第2圖為依據本創作一實施例之發光二極體防斷路保 護晶片之示意圖。本創作之發光二極體防斷路保護晶片2㈧ 係用以防止串聯的複數個發光二極體21〇因其中之一斷路 而導致整體失效。該發光二極體防斷路保護晶片2〇〇具有 複數個斷路觸發器220，各個斷路觸發器22〇彼此串聯， 並刀別與各發光—極體210並聯，各個斷路觸發器mo會 在其對應的發光一極體開路時被觸發，而原本流至對應發 光二極體210之電流將被重新導向至該斷路觸發器22〇， 使付其他未開路的發光·一極體得以取得電流而維持在導通 狀態。 本創作之各個斷路觸發器22〇更包括一抗炼絲 (antifuse)221以及一電晶體222。其中該抗熔絲221具有一 第一端及一第二端，而該第一端連接至一發光二極體 之一正端。在一實施例中，該電晶體222係一雙載子接面 電晶體(bipolar junction transistor，BJT)，具有一集極、一 基極’以及一射極’其中該集極連接至該發光二極體21〇 之正端’該基極連接至該抗熔絲221之該第二端，而該射 極連接至該發光·一極體210之負端。在其他實施例中，熟 悉技藝人士可以採用適當之電晶體’本創作不必以此為限。 6 M420836 此外，值得、、±立 / 确 壓提升至—韓自/:的是’本創作之各抗㈣220具有電 佳每施例中，壓即*斷路轉變成通路之特性。在一較 :口本匈作發光二極體防斷路保護晶片200之各 ^炼糸了為金屬間抗炫絲(metal-to-metal antifuse)。第The following is a description of the preferred embodiment of the creation. The embodiments are intended to illustrate the principles of the present invention, but are not intended to limit the present invention. The scope of this creation is subject to the claims appended hereto. β The following is a description of the preferred embodiment of the creation. • The various embodiments are intended to illustrate the principles of the present invention, but are not intended to limit the present invention. The scope of this creation is subject to the claims appended hereto. FIG. 2 is a schematic diagram of a light-emitting diode anti-breaking protection wafer according to an embodiment of the present invention. The light-emitting diode anti-breaking protection chip 2 (8) of the present invention is used to prevent a plurality of light-emitting diodes 21 connected in series from being broken due to one of them. The light-emitting diode anti-breaking protection chip 2 has a plurality of circuit breakers 220, and each of the circuit breakers 22 is connected in series with each other, and the blades are connected in parallel with the respective light-emitting bodies 210, and the respective circuit breakers mo are corresponding thereto. The light-emitting diode is triggered when the open circuit is open, and the current originally flowing to the corresponding light-emitting diode 210 is redirected to the open-circuit trigger 22〇, so that other unopened light-emitting diodes can be used to maintain current. In the on state. Each of the open circuit triggers 22 of the present invention further includes an antifuse 221 and a transistor 222. The anti-fuse 221 has a first end and a second end, and the first end is connected to a positive end of one of the light emitting diodes. In one embodiment, the transistor 222 is a bipolar junction transistor (BJT) having a collector, a base 'and an emitter', wherein the collector is connected to the light emitting diode The positive end of the pole body 21' is connected to the second end of the anti-fuse 221, and the emitter is connected to the negative end of the light-emitting body 210. In other embodiments, those skilled in the art will be able to employ a suitable transistor. 6 M420836 In addition, it is worthwhile, ± 立 / 确 提升 — 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 韩 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本In a comparison: the mouth of the Hungarian luminescent diode protection circuit 200 is smelted into a metal-to-metal antifuse. First
層間隔、’、邑緣介電層或一非晶石夕層（amorphous SllleC〇n)L3 °當該金屬間抗熔絲之兩極間（即L1與L2間）之 電壓提升至上述轉態電壓時，非晶石夕層L3即被炫化而使該 兩金屬層L1及L2彼此接觸，藉以使兩極間之電流導通。Layer spacing, ', 邑 edge dielectric layer or an amorphous slab layer L3 ° when the voltage between the two electrodes of the inter-fuse anti-fuse (ie, between L1 and L2) is raised to the above-mentioned transition voltage At this time, the amorphous slab layer L3 is stunned so that the two metal layers L1 and L2 are in contact with each other, whereby the current between the two electrodes is conducted.
m 7. 2 Ί年月 3A圖及第3B圖分別為一金屬間抗熔絲導通前後示意圖。 金屬間抗溶絲之兩極分別為兩金屬層L1及L2，而兩金屬 相對於先前技術，本創作採用金屬間抗炫絲之作法將 有下列多項好處：其―，金屬間抗絲所㈣之面積較習 知_控整流||小得多，有利於將保護㈣二極體燈具的 所有發光二極體開路保護器整合於單一晶片中；其二、金 屬間抗炫絲之阻值甚小，約2G〜则左右，不易產生高溫， 因此較無散熱問題；其三，金屬間抗炫絲不若 習知的石夕控 整流益谷易因為外在因素而產生誤動作，因此有助於發光 二極體燈具穩定運作。 如削文所述，若一元件具有當其上電壓提升至一轉態 電壓叫即由斷路轉變成通路之特性，則此元件即適合作為 2創作之抗熔絲。第4圖為本創作另一實施例之抗熔絲示 意圖。在此實施例中，本創作之發光二極體開路保護器中 之各個抗炫絲係一靜態隨機存取記憶體（static rand〇m access memory ’ SRAM) ’具有位元線见及反位元線亙，及 複數個電晶體T1〜T6，其中位元線见及反位元線瓦分別為 7m 7. 2 Ί年月 3A and 3B are respectively a schematic diagram of the front and back of an inter-metal anti-fuse. The two poles of the metal-resistant anti-solving wire are respectively two metal layers L1 and L2, and the two metals are compared with the prior art, and the creation of the inter-metal anti-shocking wire has the following advantages: - the intermetallic anti-filament (4) The area is much smaller than the conventional _ control rectification||, which is beneficial to integrate all the light-emitting diode open-circuit protectors of the protection (four) diode lamps into a single wafer; second, the resistance between the metal anti-shocks is very small. , about 2G ~ is about, it is not easy to produce high temperature, so there is no heat dissipation problem; Third, the anti-shocking of metal is not as good as the well-known Shi Xi control rectification Yigu easy to cause malfunction due to external factors, so it helps to illuminate The diode lamps operate stably. As described in the text, if an element has the characteristic that when the voltage is raised to a transition state, that is, the transition from the open circuit to the path, the element is suitable as the anti-fuse of the 2 creation. Fig. 4 is a view showing the anti-fuse of another embodiment of the present invention. In this embodiment, each of the static rad〇m access memory 'SRAM' in the LED open-circuit protector of the present invention has a bit line and an anti-bit element.亘, and a plurality of transistors T1~T6, wherein the bit line and the inverted bit line are respectively 7
MfTf1 曰祠 千月 W s 、 抗熔絲之正極與負極，可分別耦接至欲被保護的發光二極 體210之兩端。第5圖為第4圖之靜態隨機存取記憶體之 轉態特性圖。以電晶體T1與T2間之左節點NL、以及電 晶體T3與T4間之右節點NR為例，當左節點NL之電壓 超過一轉態電壓（圖中P點）後’右節點NR之電壓即由高態 轉變為低態，上述記憶體的動作即可達成抗熔絲的效果。 值得注意的是，雖然前文以靜態隨機存取記憶體（SRAM) 為例，但熟悉技藝者可了解本創作之抗熔絲可為包括單次 可程式化記憶體（once timing programmable，OTP)、可程式 唯讀記憶體(programmable read-only memory，PROM)、可 抹除可編程唯讀記憶體(EPROM)，或電子式可抹除可編程 唯讀記憶體（EEPROM)、磁阻式隨機存取記憶體 (magnetoresistance random access memory，MRAM)、鐵電 式隨機存取記憶體(Ferroelectric RAM)在内的各種記憶體。 本創作雖以較佳實施例揭露如上，然其並非用以限定 本創作的範圍，任何熟習此項技藝者，在不脫離本創作之 精神和範圍内，當可做些許的更動與潤飾，因此本創作之 保護範圍當視後附之申請專利範圍所界定者為準。 本創作雖以較佳實施例揭露如上，然其並非用以限定 本創作的範圍，任何熟習此項技藝者，在不脫離本創作之 精神和範圍内，當可做些許的更動與潤飾，因此本創作之 保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】The positive and negative electrodes of the MfTf1 千 thousand months W s and the anti-fuse can be respectively coupled to the two ends of the light-emitting diode 210 to be protected. Fig. 5 is a transition diagram of the static random access memory of Fig. 4. Taking the left node NL between the transistors T1 and T2 and the right node NR between the transistors T3 and T4 as an example, when the voltage of the left node NL exceeds a transition voltage (point P in the figure), the voltage of the right node NR That is, from the high state to the low state, the action of the above memory can achieve the effect of anti-fuse. It is worth noting that although the above example uses static random access memory (SRAM), those skilled in the art can understand that the anti-fuse of the present invention can include single-time programmable memory (OTP), Programmable read-only memory (PROM), erasable programmable read-only memory (EPROM), or electronic erasable programmable read-only memory (EEPROM), magnetoresistive random memory A variety of memory including memory (magnetoresistance random access memory, MRAM) and ferroelectric random access memory (Ferroelectric RAM). The present invention is disclosed in the above preferred embodiments, and is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of protection of this creation is subject to the definition of the scope of the patent application attached. The present invention is disclosed in the above preferred embodiments, and is not intended to limit the scope of the present invention. Anyone skilled in the art can make some changes and refinements without departing from the spirit and scope of the present invention. The scope of protection of this creation is subject to the definition of the scope of the patent application attached. [Simple description of the map]
M420836 * 第1圖為習知的LED開路保護器示意圖。 _ . 第2圖為依據本創作一實施例之發光二極體防斷路保 護晶片之不意圖。 第3A圖及第3B圖分別為一金屬蛣抗熔絲導通前後示 意圖。 第4圖為本創作另一實施例之抗熔絲示意圖。 第5圖為第4圖之靜態隨機存取記憶體之轉態特性圖。 • 【主要元件符號說明】 100〜LED開路保護器； 110、112〜LED ; 120〜矽控整流器； 122〜控制電路； 124〜二極體； 200〜發光二極體保護電路； 210〜各發光二極體； .· 220〜斷路觸發器； 221〜抗熔絲； 222〜電晶體； LI、L2〜金屬層； L3〜非晶矽層； T1〜T6〜電晶體； BL〜位元線。M420836 * Figure 1 is a schematic diagram of a conventional LED open circuit protector. Fig. 2 is a schematic view of a light-emitting diode anti-breaking protection wafer according to an embodiment of the present invention. Figures 3A and 3B are schematic illustrations of a metal crucible anti-fuse conduction before and after. Figure 4 is a schematic view of an anti-fuse of another embodiment of the present invention. Fig. 5 is a diagram showing the transition state of the static random access memory of Fig. 4. • [Main component symbol description] 100~LED open circuit protector; 110, 112~LED; 120~ 矽 control rectifier; 122~ control circuit; 124~ diode; 200~ illuminator protection circuit; Diode; .. 220~ open circuit trigger; 221~ anti-fuse; 222~ transistor; LI, L2~ metal layer; L3~ amorphous layer; T1~T6~ transistor; BL~ bit line.