CN102573215A - Light emitting diode open-circuit failure bypass switch and circuit comprising same - Google Patents
Light emitting diode open-circuit failure bypass switch and circuit comprising same Download PDFInfo
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- CN102573215A CN102573215A CN2011103899504A CN201110389950A CN102573215A CN 102573215 A CN102573215 A CN 102573215A CN 2011103899504 A CN2011103899504 A CN 2011103899504A CN 201110389950 A CN201110389950 A CN 201110389950A CN 102573215 A CN102573215 A CN 102573215A
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- 230000001681 protective effect Effects 0.000 claims description 2
- 230000005611 electricity Effects 0.000 abstract description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000002184 metal Substances 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Abstract
The invention relates to a bypass switch in the field of electricity, in particular to an open-circuit failure bypass switch of a light-emitting diode and a circuit comprising the bypass switch. The invention is realized by the following technical scheme: the LED open-circuit failure bypass switch comprises an executive device, a trigger device and a compensation device, wherein the executive device is used for conducting when the LED connected in parallel is open-circuit failed, the trigger device is connected with the executive device in parallel and used for triggering the executive device to conduct, and the compensation device is connected with the executive device in series and used for compensating for the voltage drop difference between the executive device and the LED. The difference between the voltage drop of the bypass switch and the voltage drop of the light emitting diode is smaller than the difference between the voltage drop of the bypass switch circuit and the voltage drop of the light emitting diode in the prior art.
Description
Technical field
The present invention relates to the electricity field by-pass switch, particularly light-emitting diode open-circuit inefficacy by-pass switch and comprise the circuit of said by-pass switch.
Background technology
The semiconductor by-pass switch circuit of having announced at present that is used to protect the light-emitting diode open-circuit inefficacy; As shown in Figure 1; By one with light-emitting diode that one group of series aiding connection is connected in the thyristor that is in parallel of a light-emitting diode and the voltage divider parallelly connected with this thyristor form; Voltage divider is made up of resistor and is connected with the gate pole of thyristor, for this gate circuit transistor gate provides certain electromotive force, thyristor is closed under the situation of light-emitting diode operate as normal, under the situation that light-emitting diode open-circuit lost efficacy, opens " ON state "; Therefore, this thyristor has been played the part of the effect of by-pass switch; The voltage divider parallelly connected with thyristor played the part of the effect of voltage detecting circuit; When open failure appearred in a light-emitting diode in many light emitting diode string that are connected in series, this thyristor provided bypass path, made electric current can flow through all the other normal light-emitting diodes in the light emitting diode string.
The bypass circuit technology of this type is suggested in U.S. Pat 7,538,497 B2 of Norimasa Furukawa.This bypass circuit is walked around the light-emitting diode of open failure, to other normal light-emitting diode of connecting with the light-emitting diode of this inefficacy the needed electric current that works on is provided.
In view of the pressure drop of by-pass switch device under ON state in this bypass circuit is about 1V, and at present typically based on the about 2.5-3.5V of light-emitting diode forward voltage drop of semiconductor material with wide forbidden band, there is mismatch between this two:
1, drives under the situation of series connection light emitting diode string at constant-current supply; This by-pass switch technology not only provides current bypass for the open failure light-emitting diode in the light emitting diode string effectively; Guaranteed that electric current can continue to flow through the normal light-emitting diode that all the other are connected in series, made it light output; And this by-pass switch has lower power consumption; But because the light-emitting diode that lost efficacy is not luminous, the whole luminous intensity of light emitting diode string can weaken to some extent;
2, dispose at dot matrix LEDs; Perhaps under light emitting diode string-situation such as parallel connected array configuration; Mismatch between the ON state pressure drop of the forward voltage drop of light-emitting diode and by-pass switch device; The electric current that will cause passing through light-emitting diode on the affected light emitting diode string increases, and this electric current increases with the degree of pressure drop mismatch proportional; And the difference between the degree of this pressure drop mismatch and above-mentioned ON state pressure drop, the forward voltage drop, and light-emitting diode quantity is relevant in the series connection light emitting diode string.The consequence that electric current increases may cause all the other normal light-emitting diodes to bear electric over-stress, deterioration, even inefficacy gradually; Particularly when power supply is constant voltage source, this electric over-stress effect will be more remarkable.
Therefore, need a kind of new by-pass switch circuit, the light-emitting diode of open failure is carried out bypass.Particularly at the light-emitting diode based on semiconductor material with wide forbidden band, especially drive with constant voltage source, the dot matrix LEDs configuration is perhaps under light emitting diode string-situation such as parallel connected array configuration.
Summary of the invention
The purpose of this invention is to provide light-emitting diode open-circuit inefficacy by-pass switch, the difference of pressure drop of this kind by-pass switch and light-emitting diodes tube voltage drop is poor less than by-pass switch circuit pressure drop in the background technology and light-emitting diodes tube voltage drop.
Above-mentioned technical purpose of the present invention is achieved through following technical scheme: light-emitting diode open-circuit inefficacy by-pass switch, it comprises
The performer that is used for conducting when the light-emitting diode open-circuit of parallel connection with it lost efficacy,
It is parallelly connected with performer and be used to trigger the trigger device of performer conducting,
Connect with performer and be used to remedy the device of pressure drop difference between performer and the light-emitting diode.
The setting that remedies device has effectively reduced the pressure drop difference between by-pass switch and the light-emitting diode; Therefore; Even the light-emitting diode in the series connection is under the situation that has a plurality of even a large amount of light-emitting diode open-circuits to lose efficacy each other; Remaining light-emitting diode not only still can conducting, and bears low overcurrent, thereby has solved disadvantages of background technology.
Preferred as technique scheme, said performer is a thyristor, and trigger device is connected with the gate pole of thyristor, and the said device that remedies is a nonlinear device.
Preferred as technique scheme, said nonlinear device is conducting direction and the consistent diode of said thyristor conducting direction.
Connect with performer through diode, thereby background technology reaches the purpose that reduces pressure drop difference between by-pass switch and the light-emitting diode relatively.
Preferred as technique scheme, said nonlinear device is conducting direction another thyristor consistent with said thyristor conducting direction.
Connect with another thyristor as remedying device with a thyristor, thereby background technology reaches the purpose that reduces pressure drop difference between by-pass switch and the light-emitting diode relatively as performer.
Another object of the present invention provides the protective circuit that comprises above-mentioned light-emitting diode open-circuit inefficacy by-pass switch; Comprise the light emitting diode string that has two light-emitting diodes at least; Be connected in the public anode and cathode of light emitting diode string and the power supply of forward voltage can be provided for light-emitting diode; Parallelly connected with said light-emitting diode and be used for the performer of conducting when corresponding light-emitting diode open-circuit lost efficacy; Parallelly connected with performer and be used to trigger the trigger device of performer conducting, connect with performer and be used to remedy the device of pressure drop difference between performer and the said light-emitting diode.
In sum; The present invention has following beneficial effect: relative background technology; The present invention has effectively reduced the pressure drop difference between by-pass switch and the light-emitting diode; Thereby avoid under the situation that the part light-emitting diode open-circuit lost efficacy, remaining light-emitting diode bears overcurrent and is prone to deterioration even situation about losing efficacy.
Description of drawings
Fig. 1 is the background technology sketch map;
Fig. 2 is embodiment 1 sketch map;
Fig. 3 is embodiment 2 sketch mapes;
Fig. 4 is embodiment 3 sketch mapes;
Fig. 5 is embodiment 4 sketch mapes, is the schematic equivalent circuit on the semi-conductor silicon chip that is integrated in of thyristor among Fig. 4, silicon diode, Zener diode.
Among the figure, 26, n type silicon chip, 27, p type zone one, 28, p type zone two, 29, p type zone three, 30, n type zone one, 31, n type zone two, 32, n type zone three, 33, metal two, 34, metal one, 35, metal three.
Embodiment
Below in conjunction with accompanying drawing the present invention is done further explain.
This specific embodiment only is to explanation of the present invention; It is not a limitation of the present invention; Those skilled in the art can make the modification that does not have creative contribution to present embodiment as required after reading this specification, but as long as in claim scope of the present invention, all receive the protection of Patent Law.
Embodiment 1: as shown in Figure 2, light-emitting diode open-circuit inefficacy by-pass switch comprises
The performer that be used for when the light-emitting diode open-circuit of with it parallel connection lost efficacy conducting parallelly connected with light-emitting diode,
It is parallelly connected with performer and be used to trigger the trigger device of performer conducting,
Connect with performer and be used to remedy the device of pressure drop difference between performer and the light-emitting diode.
Said performer is the conducting direction thyristor consistent with the light-emitting diode conducting direction; Trigger device is made up of two resistance of connecting each other, and the gate pole of thyristor is connected between two resistance; Remedy device and be the conducting direction diode consistent and be silicon diode with the thyristor conducting direction.
Under all conducting situation of light-emitting diode, though thyristor bears the forward anode voltage, yet owing to the lower cut-off state that is in of its gate pole potential force; When certain light-emitting diode open-circuit lost efficacy; Then flow through the trigger device of parallel connection with it; The electric current that is two resistance on present embodiment Fig. 2 increases, and then the electromotive force of gate circuit transistor gate uprises, and reaches the triggering electromotive force of thyristor; Thereby make the thyristor conducting, continue to make the light-emitting diode of connecting still can conducting with the light-emitting diode of open failure.
Present embodiment, usually, the overall presure drop that thyristor and diode produce is compared meeting and is produced 25% with interior mismatch about about 2V with the forward voltage drop 1.6V-2.7V of light-emitting diode; Therefore, compare with background technology, the overcurrent through all the other normal light-emitting diodes will reduce up to 60%.
Embodiment 2: as shown in Figure 3, be that with the difference of embodiment 1 said trigger device is a Zener diode that is connected between gate circuit transistor gate and the anode.
Embodiment 3: as shown in Figure 4; Light-emitting diode open-circuit inefficacy by-pass switch comprises that negative electrode gate pole and anode gate pole are connected between the negative electrode gate pole and anode of thyristor as trigger device through thyristor, and thyristor series connection and conducting direction silicon diode, Zener diode consistent with thyristor that two resistance are connected to its negative electrode and anode respectively.
Embodiment 4: as shown in Figure 5, present embodiment is integrated on the semi-conducting material for thyristor among the embodiment 3, silicon diode, Zener diode, and present embodiment is a silicon, the integrated circuit entity of formation; Comprise oxidation, photoetching, diffusion and thin film technique in the manufacturing approach.
This integrated circuit is made on n type silicon chip 26, comprise the p type zone 1 that diffuses to form, p type zone 2 28, p type zone 3 29, in the n type zone 1 that forms on the n type silicon chip 26, the n type zone 2 31 that in p type zone 2 28, forms, n type zone 3 32 overlap joints be on the border of n type silicon chip 26 and p type regional 2 28; Metal 1 is Metal Contact that p type zone 1 is formed; Metal 2 33 is respectively the Metal Contact that p type zone 3 29, n type zone 1 and p type zone 2 28, n type zone 2 31 are formed with metal 3 35.
Corresponding to embodiment 3; Thyristor is made up of n type silicon chip 26 and p type zone 2 28, p type zone 3 29, n type zone 2 31; N type zone 3 32 constitutes the negative pole of Zener diode; P type zone 1 constitutes the positive pole of silicon diode, and p type zone 2 28 and n type silicon chip 26 constitute the positive pole and the negative pole of Zener diode, silicon diode respectively.
Claims (5)
1. light-emitting diode open-circuit inefficacy by-pass switch is characterized in that, it comprises
The performer that is used for conducting when the light-emitting diode open-circuit of parallel connection with it lost efficacy,
It is parallelly connected with performer and be used to trigger the trigger device of performer conducting,
Connect with performer and be used to remedy the device of pressure drop difference between performer and the light-emitting diode.
2. light-emitting diode open-circuit inefficacy by-pass switch according to claim 1 is characterized in that said performer is a thyristor, and trigger device is connected with the gate pole of thyristor, and the said device that remedies is a nonlinear device.
3. light-emitting diode open-circuit inefficacy by-pass switch according to claim 2 is characterized in that, said nonlinear device is conducting direction and the consistent diode of said thyristor conducting direction.
4. light-emitting diode open-circuit inefficacy by-pass switch according to claim 2 is characterized in that, said nonlinear device is conducting direction another thyristor consistent with said thyristor conducting direction.
5. the protective circuit that comprises the described light-emitting diode open-circuit inefficacy of claim 1 by-pass switch; Comprise the light emitting diode string that has two light-emitting diodes at least, be connected in the public anode and cathode of light emitting diode string and the power supply of forward voltage can be provided for light-emitting diode; It is characterized in that; It comprises parallelly connected with said light-emitting diode and is used for the performer of conducting when corresponding light-emitting diode open-circuit lost efficacy; Parallelly connected with performer and be used to trigger the trigger device of performer conducting, connect with performer and be used to remedy the device of pressure drop difference between performer and the said light-emitting diode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110389950.4A CN102573215B (en) | 2011-11-30 | 2011-11-30 | Light emitting diode open-circuit failure bypass switch and circuit comprising same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110389950.4A CN102573215B (en) | 2011-11-30 | 2011-11-30 | Light emitting diode open-circuit failure bypass switch and circuit comprising same |
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| CN102573215A true CN102573215A (en) | 2012-07-11 |
| CN102573215B CN102573215B (en) | 2015-01-07 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103826350A (en) * | 2012-11-19 | 2014-05-28 | 刘祥林 | Light-emitting-diode circuit-break protection circuit |
| CN110707077A (en) * | 2019-09-12 | 2020-01-17 | 华为技术有限公司 | Discrete diode device, circuit with bypass function and converter |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260997A (en) * | 2008-04-24 | 2008-09-10 | 辽宁九通电力电子有限公司 | Tandem LED driven intelligence control system possessing output protecting function |
| CN201219311Y (en) * | 2008-06-13 | 2009-04-08 | 英飞特电子（杭州）有限公司 | Protection circuit for LED illumination module |
| CN202425110U (en) * | 2011-11-30 | 2012-09-05 | 谢可勋 | By-pass switch for open-circuit failure of light emitting diode and circuit containing by-pass switch |
-
2011
- 2011-11-30 CN CN201110389950.4A patent/CN102573215B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260997A (en) * | 2008-04-24 | 2008-09-10 | 辽宁九通电力电子有限公司 | Tandem LED driven intelligence control system possessing output protecting function |
| CN201219311Y (en) * | 2008-06-13 | 2009-04-08 | 英飞特电子（杭州）有限公司 | Protection circuit for LED illumination module |
| CN202425110U (en) * | 2011-11-30 | 2012-09-05 | 谢可勋 | By-pass switch for open-circuit failure of light emitting diode and circuit containing by-pass switch |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103826350A (en) * | 2012-11-19 | 2014-05-28 | 刘祥林 | Light-emitting-diode circuit-break protection circuit |
| CN110707077A (en) * | 2019-09-12 | 2020-01-17 | 华为技术有限公司 | Discrete diode device, circuit with bypass function and converter |
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| CN102573215B (en) | 2015-01-07 |
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Address after: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee after: ZHEJIANG MJ TECHNOLOGYCO.,LTD. Patentee after: Xie Kexun Address before: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee before: ZHEJIANG MEIJING TECHNOLOGY Co.,Ltd. Patentee before: Xie Kexun |
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