CN102573215B - Light emitting diode open-circuit failure bypass switch and circuit comprising same - Google Patents
Light emitting diode open-circuit failure bypass switch and circuit comprising same Download PDFInfo
- Publication number
- CN102573215B CN102573215B CN201110389950.4A CN201110389950A CN102573215B CN 102573215 B CN102573215 B CN 102573215B CN 201110389950 A CN201110389950 A CN 201110389950A CN 102573215 B CN102573215 B CN 102573215B
- Authority
- CN
- China
- Prior art keywords
- emitting diode
- type
- light
- circuit
- performer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000002184 metal Substances 0.000 claims description 13
- 239000004065 semiconductor Substances 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 230000005611 electricity Effects 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
The invention relates to a bypass switch in the field of electricity, in particular to an open-circuit failure bypass switch of a light-emitting diode and a circuit comprising the bypass switch. The invention is realized by the following technical scheme: the LED open-circuit failure bypass switch comprises an executive device, a trigger device and a compensation device, wherein the executive device is used for conducting when the LED connected in parallel is open-circuit failed, the trigger device is connected with the executive device in parallel and used for triggering the executive device to conduct, and the compensation device is connected with the executive device in series and used for compensating for the voltage drop difference between the executive device and the LED. The difference between the voltage drop of the bypass switch and the voltage drop of the light emitting diode is smaller than the difference between the voltage drop of the bypass switch circuit and the voltage drop of the light emitting diode in the prior art.
Description
Technical field
The present invention relates to electricity field by-pass switch, particularly light-emitting diode open-circuit inefficacy by-pass switch and comprise the circuit of described by-pass switch.
Background technology
The semiconductor bypass switching circuit lost efficacy for the protection of light-emitting diode open-circuit announced at present, as shown in Figure 1, the thyristor that a light-emitting diode in the light-emitting diode be connected with one group of series aiding connection by is in parallel, and the voltage divider in parallel with this thyristor forms; Voltage divider is made up of resistor and is connected with the gate pole of thyristor, for this gate circuit transistor gate provides certain electromotive force, thyristor is closed when light-emitting diode normally works, opens into " ON state " when light-emitting diode open-circuit loses efficacy; Therefore, this thyristor plays the effect of by-pass switch; The voltage divider in parallel with thyristor plays the effect of voltage detecting circuit; When open failure appears in a light-emitting diode in many light-emitting diode strings be connected in series, this thyristor provides bypass path, makes electric current can flow through all the other normal light-emitting diodes in light-emitting diode string.
The bypass circuit technology of this type, in the US Patent No. 7,538 of Norimasa Furukawa, is suggested in 497 B2.This bypass circuit walks around the light-emitting diode of open failure, and the normal luminous diode of connecting with the light-emitting diode of this inefficacy to other provides the required electric current that works on.
In view of the pressure drop of the bypass switching device in this bypass circuit under ON state is about 1V, and the typical light-emitting diode forward voltage drop based on semiconductor material with wide forbidden band is about 2.5-3.5V at present, there is mismatch between both:
1, when constant-current supply drives series connection light-emitting diode string, this by-pass switch technology is not only effectively for the open failure light-emitting diode in light-emitting diode string provides current bypass, ensure that and made it light output by the normal luminous diode that electric current can flow continuously through all the other and is connected in series; And this by-pass switch has lower power consumption; But because the light-emitting diode lost efficacy is not luminous, the Integral luminous intensity of light-emitting diode string can weaken to some extent;
2, configure at dot matrix LEDs, or in the situations such as light-emitting diode series-multiple connection array configurations, mismatch between the forward voltage drop of light-emitting diode and the ON state pressure drop of bypass switching device, increased by the electric current caused by light-emitting diode on affected light-emitting diode string, this electric current increases with the degree of pressure drop mismatch proportional; And the degree of this pressure drop mismatch and above-mentioned ON state pressure drop, difference between forward voltage drop, and in series connection light-emitting diode string, light-emitting diode quantity is correlated with.The consequence that electric current increases may cause all the other normal light-emitting diodes to bear electric over-stress, and deterioration, even lost efficacy gradually; Particularly when power supply is constant voltage source, this electric over-stress effect will be more remarkable.
Therefore, need a kind of new bypass switching circuit, the light-emitting diode that open-circuit lost efficacy carries out bypass.Particularly at the light-emitting diode based on semiconductor material with wide forbidden band, especially drive with constant voltage source, dot matrix LEDs configures, or in the situation such as light-emitting diode series-multiple connection array configurations.
Summary of the invention
The object of this invention is to provide light-emitting diode open-circuit inefficacy by-pass switch, the difference of this kind of by-pass switch pressure drop and light-emitting diodes tube voltage drop is less than the difference of bypass switching circuit pressure drop and light-emitting diodes tube voltage drop in background technology.
Above-mentioned technical purpose of the present invention is achieved by the following technical programs: light-emitting diode open-circuit inefficacy by-pass switch, it comprises
For the performer of the conducting when light-emitting diode open-circuit in parallel with it lost efficacy,
And trigger device for trigger performer conducting in parallel with performer,
Connect with performer and make up device for what make up pressure drop difference between performer and light-emitting diode.
The setting making up device effectively reduces the pressure drop difference between by-pass switch and light-emitting diode, therefore, even if the light-emitting diode in mutual series connection is when there being multiple even a large amount of light-emitting diode open-circuit to lose efficacy, remaining light-emitting diode not only still can conducting, and bear lower overcurrent, thus solve the deficiency of background technology.
Preferred as technique scheme, described performer is thyristor, and trigger device is connected with the gate pole of thyristor, described in make up device be nonlinear device.
Preferred as technique scheme, described nonlinear device is the conducting direction diode consistent with described turn on thyristors direction.
Connected with performer by diode, thus background technology reaches the object reducing pressure drop difference between by-pass switch and light-emitting diode relatively.
Preferred as technique scheme, described nonlinear device is conducting direction another thyristor consistent with described turn on thyristors direction.
Using a thyristor as making up device and another Thyristors in series as performer, thus background technology reaches the object reducing pressure drop difference between by-pass switch and light-emitting diode relatively.
Another object of the present invention is to provide the protective circuit comprising above-mentioned light-emitting diode open-circuit inefficacy by-pass switch, comprise the light-emitting diode string at least with two light-emitting diodes, be connected to the public anode and cathode of light-emitting diode string and the power supply of forward voltage can be provided for light-emitting diode, in parallel to described light-emitting diode and for the performer of the conducting when corresponding light-emitting diode open-circuit lost efficacy, and trigger device for trigger performer conducting in parallel with performer, connect with performer and make up device for what make up pressure drop difference between performer and described light-emitting diode.
In sum, the present invention has following beneficial effect: background technology relatively, the present invention effectively reduces the pressure drop difference between by-pass switch and light-emitting diode, thus avoid when part light-emitting diode open-circuit lost efficacy, remaining light-emitting diode bear overcurrent and easily deterioration, situation about even losing efficacy.
Accompanying drawing explanation
Fig. 1 is background technology schematic diagram;
Fig. 2 is embodiment 1 schematic diagram;
Fig. 3 is embodiment 2 schematic diagram;
Fig. 4 is embodiment 3 schematic diagram;
Fig. 5 is embodiment 4 schematic diagram, is the schematic equivalent circuit be integrated on semi-conductor silicon chip of thyristor, silicon diode, Zener diode in Fig. 4.
In figure, 26, n-type silicon chip, 27, p-type area one, 28, p-type area two, 29, p-type area three, 30, n-type region one, 31, n-type region two, 32, n-type region three, 33, metal two, 34, metal one, 35, metal three.
Embodiment
Below in conjunction with accompanying drawing, the present invention is described in further detail.
This specific embodiment is only explanation of the invention; it is not limitation of the present invention; those skilled in the art can make to the present embodiment the amendment not having creative contribution as required after reading this specification, as long as but be all subject to the protection of Patent Law in right of the present invention.
Embodiment 1: as shown in Figure 2, light-emitting diode open-circuit inefficacy by-pass switch, comprises
The performer for when with it in parallel light-emitting diode open-circuit lost efficacy conducting in parallel with light-emitting diode,
And trigger device for trigger performer conducting in parallel with performer,
Connect with performer and make up device for what make up pressure drop difference between performer and light-emitting diode.
Described performer is the conducting direction thyristor consistent with LEDs ON direction; Trigger device is made up of the resistance that two are connected mutually, and the gate pole of thyristor is connected between two resistance; Make up device to be the conducting direction diode consistent with turn on thyristors direction and to be silicon diode.
In light-emitting diode all conducting situations, though thyristor bears positive anode voltage, but be in cut-off state because its gate pole potential force is lower; When certain light-emitting diode open-circuit lost efficacy, then flow through trigger device in parallel with it, the electric current of two resistance namely on the present embodiment Fig. 2 increases, then the electromotive force of gate circuit transistor gate uprises, reach the trigger potential of thyristor, thus making turn on thyristors, the light-emitting diode continuing to make to connect with the light-emitting diode of open failure still can conducting.
The present embodiment, usually, the overall presure drop that thyristor and diode produce, about the left and right of 2V, can produce the mismatch within 25% compared with the forward voltage drop 1.6V-2.7V of light-emitting diode; Therefore, compared with background technology, will reduce up to 60% by the overcurrent of all the other normal luminous diodes.
Embodiment 2: as shown in Figure 3, is with the difference of embodiment 1, and described trigger device is a Zener diode being connected between gate circuit transistor gate and anode.
Embodiment 3: as shown in Figure 4, light-emitting diode open-circuit inefficacy by-pass switch, comprises that negative electrode gate pole and anode gate pole are connected to the thyristor of its negative electrode and anode respectively by two resistance, one and Thyristors in series and the conducting direction silicon diode consistent with thyristor, a Zener diode are connected between the negative electrode gate pole of thyristor and anode as trigger device.
Embodiment 4: as shown in Figure 5, the present embodiment is thyristor in embodiment 3, silicon diode, Zener diode be integrated on semi-conducting material, the present embodiment is silicon, the integrated circuit entity of formation; Manufacture method comprises oxidation, photoetching, diffusion and thin film technique.
This integrated circuit makes in n-type silicon chip 26, comprise diffuse to form p-type area 1, p-type area 2 28, p-type area 3 29, the n-type region 1 formed in n-type silicon chip 26, formation p-type area 2 28 in n-type region 2 31, n-type region 3 32 be overlapped on the border of n-type silicon chip 26 and p-type area 2 28; Metal 1 is the Metal Contact formed p-type area 1; Metal 2 33 and metal 3 35 are the Metal Contact formed p-type area 3 29, n-type region 1 and p-type area 2 28, n-type region 2 31 respectively.
Corresponding to embodiment 3, thyristor is made up of n-type silicon chip 26 and p-type area 2 28, p-type area 3 29, n-type region 2 31, n-type region 3 32 forms the negative pole of Zener diode, p-type area 1 forms the positive pole of silicon diode, and p-type area 2 28 and n-type silicon chip 26 form Zener diode, the positive pole of silicon diode and negative pole respectively.
Claims (1)
1. light-emitting diode open-circuit inefficacy by-pass switch, is characterized in that, it comprises
For the performer of the conducting when light-emitting diode open-circuit in parallel with it lost efficacy,
And trigger device for trigger performer conducting in parallel with performer,
Connect with performer and make up device for what make up pressure drop difference between performer and light-emitting diode;
Described performer is that negative electrode gate pole and anode gate pole are connected to its negative electrode and the thyristor of anode respectively by two resistance, trigger device is be connected to the zener diode between the negative electrode gate pole of thyristor and anode, described in make up device be with Thyristors in series and the silicon diode that conducting direction is consistent with thyristor;
Described thyristor, silicon diode, Zener diode are integrated on semi-conducting material, form integrated circuit;
Described integrated circuit makes n-type silicon chip (26) is upper, comprise diffuse to form p-type area one (27), p-type area two (28), p-type area three (29), be overlapped on the border of n-type silicon chip (26) and p-type area two (28) in upper n-type region one (30), the n-type region two (31) of formation p-type area two (28) in, the n-type region three (32) formed of n-type silicon chip (26); Metal one (34) is the Metal Contact formed p-type area one (27); Metal two (33) and metal three (35) are the Metal Contact formed p-type area three (29), n-type region one (30) and p-type area two (28), n-type region two (31) respectively;
Described thyristor is made up of n-type silicon chip (26) and p-type area two (28), p-type area three (29), n-type region two (31), n-type region three (32) forms the negative pole of described Zener diode, p-type area one (27) forms the positive pole of described silicon diode, and p-type area two (28) and n-type silicon chip (26) form described Zener diode, the positive pole of described silicon diode and negative pole respectively.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110389950.4A CN102573215B (en) | 2011-11-30 | 2011-11-30 | Light emitting diode open-circuit failure bypass switch and circuit comprising same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110389950.4A CN102573215B (en) | 2011-11-30 | 2011-11-30 | Light emitting diode open-circuit failure bypass switch and circuit comprising same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102573215A CN102573215A (en) | 2012-07-11 |
| CN102573215B true CN102573215B (en) | 2015-01-07 |
Family
ID=46417341
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110389950.4A Expired - Fee Related CN102573215B (en) | 2011-11-30 | 2011-11-30 | Light emitting diode open-circuit failure bypass switch and circuit comprising same |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102573215B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103826350A (en) * | 2012-11-19 | 2014-05-28 | 刘祥林 | Light-emitting-diode circuit-break protection circuit |
| CN110707077A (en) * | 2019-09-12 | 2020-01-17 | 华为技术有限公司 | Discrete diode device, circuit with bypass function and converter |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260997A (en) * | 2008-04-24 | 2008-09-10 | 辽宁九通电力电子有限公司 | Tandem LED driven intelligence control system possessing output protecting function |
| CN201219311Y (en) * | 2008-06-13 | 2009-04-08 | 英飞特电子（杭州）有限公司 | Protection circuit for LED illumination module |
| CN202425110U (en) * | 2011-11-30 | 2012-09-05 | 谢可勋 | By-pass switch for open-circuit failure of light emitting diode and circuit containing by-pass switch |
-
2011
- 2011-11-30 CN CN201110389950.4A patent/CN102573215B/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101260997A (en) * | 2008-04-24 | 2008-09-10 | 辽宁九通电力电子有限公司 | Tandem LED driven intelligence control system possessing output protecting function |
| CN201219311Y (en) * | 2008-06-13 | 2009-04-08 | 英飞特电子（杭州）有限公司 | Protection circuit for LED illumination module |
| CN202425110U (en) * | 2011-11-30 | 2012-09-05 | 谢可勋 | By-pass switch for open-circuit failure of light emitting diode and circuit containing by-pass switch |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102573215A (en) | 2012-07-11 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN101068077B (en) | Shunt protection circuit and method therefor | |
| JP5799124B2 (en) | AC drive type light emitting diode | |
| CN102315239B (en) | Photoelectric cell | |
| CN202206134U (en) | Light emitting diode (LED) over-voltage and open-circuit protection device | |
| KR20110110867A (en) | Ac light emitting diode | |
| JP2001244506A (en) | Semiconductor light emitting device and display device provided therewith | |
| CN102637683B (en) | Led device with shared voltage-limiting unit and individual voltage-equalizing resistance | |
| KR20020066393A (en) | Fabrication method of InAlGaN LED device | |
| KR20100095666A (en) | Light emitting diode chip for high voltage operation and light emitting diode package having the same | |
| CN100547283C (en) | Light-emitting diode component and luminaire | |
| US20060157657A1 (en) | Led array circuit | |
| JP2010516054A (en) | Light emitting diode resistant to high electrostatic discharge and method of manufacturing the same | |
| CN102573215B (en) | Light emitting diode open-circuit failure bypass switch and circuit comprising same | |
| JP2009165114A5 (en) | ||
| RU2011154093A (en) | SEMICONDUCTOR DEVICE | |
| US9666779B2 (en) | Semiconductor light emitting diode chip with current extension layer and graphical current extension layers | |
| TWI605730B (en) | Light-emitting device with a temperature compensation element | |
| CN104538417B (en) | LED open-circuit-protections integrated chip and its manufacture method based on diode chain | |
| CN202425110U (en) | By-pass switch for open-circuit failure of light emitting diode and circuit containing by-pass switch | |
| US10426006B2 (en) | Optoelectronic component with protective circuit | |
| CN207134375U (en) | A kind of LED chip | |
| KR20150042012A (en) | Light emitting diode array | |
| US10290773B2 (en) | Light-emitting device | |
| CN101645441B (en) | Multi-cell connected high-power photoelectric device with single-cell failure self-protecting function | |
| CN203273323U (en) | Area light source embedded with LED (Light-Emitting Diode) protection chip |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee after: ZHEJIANG MJ TECHNOLOGYCO.,LTD. Patentee after: Xie Kexun Address before: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee before: ZHEJIANG MEIJING TECHNOLOGY Co.,Ltd. Patentee before: Xie Kexun |
|
| CP01 | Change in the name or title of a patent holder | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20190905 Address after: 233000 Room 1402, Ziyang Building, Pearl Plaza, Huaishang District, Bengbu City, Anhui Province Patentee after: Bengbu HRABERO Intellectual Property Service Co.,Ltd. Address before: 313000 Zhejiang City, Huzhou Province, the town of Wuxing District, the town of standard factory building 2, building 1, eight Co-patentee before: ZHEJIANG MJ TECHNOLOGYCO.,LTD. Patentee before: Xie Kexun |
|
| TR01 | Transfer of patent right |
Effective date of registration: 20201022 Address after: 214500 Yuejiang village, Jingcheng Town, Jingjiang City, Taizhou City, Jiangsu Province Patentee after: Jiangsu Omega hose Co.,Ltd. Address before: 233000 Room 1402, Ziyang Building, Pearl Plaza, Huaishang District, Bengbu City, Anhui Province Patentee before: Bengbu HRABERO Intellectual Property Service Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220512 Address after: 214500 No. 28, Yingbin East Road, Jingjiang City, Taizhou City, Jiangsu Province Patentee after: Jiangsu Huarong Investment Development Co.,Ltd. Address before: 214500 Yuejiang village, Jingcheng Town, Jingjiang City, Taizhou City, Jiangsu Province Patentee before: Jiangsu Omega hose Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230417 Address after: 214500 No. 28, Yingbin East Road, Jingjiang City, Taizhou City, Jiangsu Province Patentee after: Jingjiang City Chengzhong Village Investment and Construction Co.,Ltd. Address before: 214500 No. 28, Yingbin East Road, Jingjiang City, Taizhou City, Jiangsu Province Patentee before: Jiangsu Huarong Investment Development Co.,Ltd. |
|
| TR01 | Transfer of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150107 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |