TWM394577U - A light-emitting device having a light-extracting layer - Google Patents

Abstract

A light-emitting device includes a substrate; a light-emitting stacked layer formed on the substrate, wherein the light-emitting stacked layer at least includes an active layer, a first patterned structure formed on the active layer, and a light-extracting layer formed on the first patterned structure, wherein the light-extracting layer includes a plurality of sublayers, wherein the refraction indices of the plurality of sublayers decrease along the direction away from where near the substrate.

Description

M394577 V. New description: ' , 7 on [New technical field] Λ This new type is a light-emitting element, especially a light-emitting element having a light extraction layer. [Prior Art], a light-emitting diode (LED is a solid-state semiconductor device) which includes at least a _pn junction ((4) Nazhijia), which is formed in a 'P-type and an n-type semiconductor Between the layers, when a bias is applied to the pn junction, the holes in the 9 P-type semiconductor layer combine with the electrons in the n-type semiconductor layer to release light. The region in which the light is generated is also commonly referred to as Light-emitting area (light_emittingregi〇n) LED is mainly characterized by small size, high luminous efficiency, long life, fast response, high reliability and good chroma. It has been widely used in electrical appliances, automobiles, signboards and transportation. P4 is full-color LED _, LED has gradually replaced lighting equipment, such as glory and white heat bulbs. However, because of the difference in refractive index between the LED and its environment (10) such as air • larger 'the light emitted by the LED LED and environment _ interface produces all-reverse ||. Shoot 'to make light confined inside the led, reducing light extraction efficiency. The light-emitting body may be further connected to the substrate via a solder bump or a glue to form a light-emitting device. In addition, the pedestal further has at least / a circuit electrically connected to the electrodes of the illuminating device via a conductive structure, such as a metal wire. [New content] A light-emitting element comprises a substrate; a light-emitting layer is formed on the substrate, wherein the light-emitting layer comprises at least an active layer and a first pattern structure is formed on the live 3 «94577 99. 7.3 0 = layer And the light extraction layer is formed on the first periodic structure, and the extracting layer comprises a plurality of subordinate layers, wherein the plurality of subordinate layers are folded toward the substrate away from the substrate. w

When the light emitted by the light-emitting layer is emitted from the light-emitting layer to the medium of the environment, the difference between the light-emitting layer and the medium is large, and the light-emitting layer is totally confined to the light-emitting stack in the interface between the light-emitting layer and the medium. (4) The efficiency of the light extraction is reduced. In this case, because the adjacent light-emitting layers, the refractive indices between the plurality of sub-layers and the medium are less different from each other, the interface between the two adjacent layers is less likely to cause total reflection, which can be transmitted to the medium via a plurality of sub-layer pastes. Medium' to improve light extraction efficiency. [Embodiment] The present invention will be described in detail, and the same or similar parts will be described in the drawings in the drawings. In a first embodiment, as shown in FIG. 1, a light-emitting element 丨 includes a substrate 1 〇; a light-emitting layer 12 is disposed on the substrate 1 ,, wherein the light-emitting layer 12 includes at least one active layer 124; and a light extraction layer 14 Located above the light emitting stack 12. The substrate 10 may be a growth substrate for the growth of the light-emitting laminate 12, or a permanent substrate joined by a bonding layer (not shown) for supporting the light-emitting laminate 12 and the light extraction layer 14 thereon. The substrate 10 may be made of a transparent or insulating material, such as an electrically insulating material, sapphire, diamond, Gias, polymer, epoxy, quartz, and Quartz. Acrylic (Acryl), zinc oxide (ZnO) or nitriding (A1N). The material of the substrate 10 can also be 4 M394577 as a high heat dissipation or reflection material, including copper (Cu), aluminum (Al), molybdenum (Mo), copper-tin (Cu-Sn), copper-zinc (Cu-Zn), copper. -Cd-Cd, Ni-Sn, Ni-Co, Au alloy, Diamond Like Carbon (DLC), Graphite Tantalum carbide (SiC), carbon fiber, composite material, metal matrix composite (MMC), ceramic matrix composite (CMC), polymer matrix composite (PMC), niobium (Si) ), phosphating (IP), selenization

Zinc (ZnSe), gallium arsenide (GaAs), tantalum carbide (SiC), gallium phosphide (Gap), gallium arsenide (GaAsP), zinc selenide (ZnSe), indium phosphide (InP), lithium gallate (LiGa〇2) or Mingji Li (LiA102). The light-emitting 4 layer 12 further includes a first semiconductor layer 122 between the substrate 1 and the active layer 124; and a second semiconductor layer 146 between the active layer 144 and the extraction layer 14 142 and , the electrical difference: hair _ 12 contains the "first" surface

Half I26 above the surface. The first upper surface 121 is an irregular structure. The first-pattern structure has a plurality of convex portions and a pair of 1 1 systems are emitted by the light-emitting layer 12 =======: different!=2, etc. =^^: indium (10), qing), _, called 5

9b· V .. ^ J genus layer, where the structure above contains more complex layers from the direction of ι〇. The implementation rate is from the adjacent substrate ι to the second substrate (4) and the third layer = the second sub-layer (4), and the number of the sub-layers may also be A146 two-layer layer paste, but not limited to the second The upper surface (4) and the work three or ", three. The d of the first subordinate layer 142 is between the shortest distance of the surface of the light emitting layer 12; the surface 121 is between 0.6 micrometers and 7 microplanar wavelengths and 10 inches, or may be subdivided into the subordinate layer 144.折射率H a subordinate layer 142 refractive index η], the second 3 and ^ between the subordinate layer 146 refractive index _

Light self-luminous residence 3<η2<ηι<3. When the light-emitting layer 12 is smothered, it is first directed to the medium of the environment. The medium of the embodiment is totally reflected in the air 12, and the interface of the working gas is limited to the light-emitting stack. In order to avoid total reflection from the interface of the slave 147 舆-舆 air emitted by the light-emitting surface 12, the refractive index of the first f-subordinate layer 144 and the third sub-layer 146 of the present embodiment is away from the substrate 10 from the substrate 10 The direction is gradually reduced. Because of the adjacent light-emitting layer ^2 and the first-subordinate layer 142; the first sub-layer 142 and the second sub-layer 144; the sub-layer 4 and the third sub-layer (4); and the third sub-layer Μ6 and the air between the fold The f-rates are less different from each other, and the interface between the two adjacent layers is less likely to cause total reflection, and can be smoothly shot into the air via the first sub-layer 142, the second sub-layer 144, and the third sub-layer 146. effectiveness. Light extraction layer 14 = Q = can be a conductive or non-conductive material, including polyimide, benzocyclobutene (BCB), perfluorocyclobutane (pfCB), magnesium oxide (Mg 〇), Electrical materials, Su8, epoxy resin (Epoxy), acrylic resin (Acrylic Resin), cycloolefin polymer (C0C), polymethyl methacrylate (pMMA), t to the original formic acid ethylene glycol (PET), poly Carbonic acid vinegar (PC), Polyetherimide, Fluorocarbon P〇lymer, Silicone, Glass, Alumina (Al2〇3), Cerium oxide (Si〇x), Oxidation ▲ (Ti〇2), tantalum nitride (SiNx), spin-on glass (SOG), other organic bonding materials, 6 M394577 IV. Designated representative drawings: (1) The representative representative of the case is: (1). (2) A brief description of the component symbols of the representative diagram: 1: Light-emitting element 10: Substrate 12: Light-emitting laminate 121: First upper surface 122: First semiconductor layer

124: active layer 126: second semiconductor layer 14: light extraction layer 141: second upper surface 142: first subordinate layer 144: second subordinate layer 146: third subordinate layer A, A': convex geometric center point P !:The first pitch M394577 dance. :', p_ J indium tin _, yttrium oxide (In0), tin oxide, r7U^AT〇), oxidized aluminum (AZ0), zinc tin oxide (2T0), zinc oxide i ^, riding him (A1GaAS), nitrogen tilting (GaN), gallium (GaP), arsenic scale (four), oxidation enough, as shown in Figure 2, similar to the first embodiment, the difference is in the ft 1 A light-extracting layer 24 is formed on the first upper surface 121, and has a first genus layer 242, a second subordinate layer 244 and a second 242, a second subordinate layer 244, and a third subordinate: Please, the number of subordinate layers The convex structure may be a plurality of convex portions and concave portions greater than three or 7 t, wherein the second pattern, i is located above the first structure, and the concave portion of the second pattern structure

Between two and two;: r about °. 6 faces 7 micro, 3⁄4 J The shortest distance d is between the light emitting laminate; ^2 between the first upper surface (2), or may be between about 〇.6 microns and The 7 micro/previous wavelength λ is called the 2' quasi-periodic structure, and the second is the first week. —ΰ,,,,. The concave portion of the structure is located in the concave portion of the first pattern structure = 7 Fig. 4 is a diagram showing a light source generating device. The device 4 includes the light emitting element of any of the embodiments of the present invention. The light source generating device 4 may be a lighting device such as a street lamp, a lamp or an indoor lighting source, or a backlight source of a backlight module in a traffic signal or a flat display. The light source generating device 4 includes a light source 41 composed of a light-emitting element, a power supply system for supplying a light source 41 - current, and a "control element 43" for controlling the power supply system 42. • The f 5 diagram shows a schematic cross-sectional view of a backlight module. A backlight module $ 2 includes the light source generating device 4 of the foregoing embodiment, and an optical element 51. The light-emitting element 51 can process the light emitted by the light source generating means 4 to be applied to the flat display H, such as the light emitted by the scattered-wire generating means 4. However, the above embodiments are only used to limit the present invention to the principle and function of the novel. Any one of the technical fields of the present invention has the usual knowledge that the machine can be slanted by the technique without taking care of the technique.

[Simple description of the schema] The schema is used to promote understanding of the novel

Figure 4 is a schematic

Figure 1 is a cross-sectional view of the present embodiment. Figure 2 is a cross-sectional view of a second embodiment of the present invention. Fig. 3 is a third solid oil according to the present invention. Fig. 4 is a schematic view showing a light source generating device of M394577. One-two: Figure 5 is a schematic diagram showing a schematic diagram of a backlight module constructed using the novel embodiment. Γ [Main component symbol description] M394577

1: Light-emitting element 10: Substrate 12: Light-emitting laminate 121: First upper surface 122: First semiconductor layer 124: Active layer 126: Second semiconductor layer 14, 24, 34: Light-extracting layer 14 241: Second upper Surfaces 142, 242, 342: first slave layer 144, 244, 344: second slave layer 146, 246, 346: third slave layer 4: light source generating device 41: light source 42: power supply system 43: control element 5 : backlight module 51: optical element A, A', B, B': convex geometric center point Pi: first pitch P2: second pitch

10

Claims (1)

M394577 VI. Patent application scope: $ ) 曰 r r, jxir 1. A light-emitting element comprising: _ --11 a substrate; 'a light-emitting layer formed on the substrate, wherein the light-emitting layer comprises at least one active a layer and a first pattern structure are formed on the active layer; and a light extraction layer is formed on the light-emitting layer, wherein the light extraction layer comprises a plurality of sub-layers, and the plurality of sub-layers are refraction The rate decreases from the substrate toward the substrate. 2. The light-emitting element according to claim 1, wherein the material of the substrate comprises one or more substances selected from the group consisting of electrically insulating materials, sapphire, diamond, glass, and polymer (P〇). Group of lymer), epoxy resin (Ep〇xy), quartz (Quartz), acrylic (Acryl), zinc oxide (Ζη〇) and aluminum nitride (A1N). 3. The light-emitting element according to claim 1, wherein the material of the substrate comprises one or more substances selected from the group consisting of copper (Cu), aluminum (A1), molybdenum (Mo), and copper-tin (Cu-Sn). Cu-Zn, Cu-Cd, Ni-Sn, Ni-c〇, Au alloy, diamond-like carbon ; DLC), Graphite, SiC, Carbon Fiber, Composites, Metal Matrix Composite (MMC), Ceramic Matrix Composite (CMC) 'South Molecular Matrix Composites' P〇iymei· Matrix Composite ; PMC), bismuth (Si), phosphide iodine (IP), zinc selenide (ZnSe), gallium arsenide (GaAs), tantalum carbide (SiC), gallium phosphide (GaP), filling A group consisting of gallium arsenide (GaAsP), sacrificial zinc (ZnSe), indium carbide (InP), gallic acid (LiGa02), and alumina clock (LiA102). 4. The light-emitting element of claim 1, wherein the light-emitting layer further comprises: M394577 a first semiconductor layer between the substrate and the active layer; and a second semiconductor layer on the active layer and the Light is taken between the layers. 5. The light-emitting element of claim 1, wherein the material of the light-emitting layer comprises more than one substance selected from the group consisting of gallium (Ga), aluminum (Al), indium (In), phosphorus (p), nitrogen, zinc, A group of cadmium (Cd) and selenium (Se). 6. The illuminating element of claim 1, wherein the first pattern structure comprises a plurality of protrusions, wherein a geometric center point of the plurality of protrusions of any two adjacent first pattern structures is between about 0.6 Between microns and 7 microns. 7. The illuminating element of claim 1, wherein the plurality of subordinate layers have a refractive index between 1 and 3. The light-emitting element according to claim 1, wherein the material of the light extraction layer comprises one or more substances selected from the group consisting of polyimines, benzocyclobutene (BCB), and perfluorocyclobutane (PFCB). , Magnesium Oxide (Mg〇), Dielectric Materials, Epoxy Epoxy, Acrylic Resin, Circumfluend Tobacco Polymer (C0C), Polymethyl Methacrylate, Polyterephthalic Acid Ethylene vinegar (PET), polycarbonate (pc), polyetherimide (Polyetherimide), Fluorocarbon Polymer, Silicone, Glass, Emulsified! Lu (A1203), Oxidized Stone (Si〇2), Titanium Dioxide (Ti〇2), Nitride Xi (XNx), Spin-Coated Glass ( S0G), other organic bonding materials, indium tin oxide (IT〇), copper oxide (InO), tin oxide (Sn〇), cadmium tin oxide (CT0), oxidation recorded tin (ΑΤ〇), zinc oxide aluminum (ΑΖΟ) , zinc tin oxide (ΖΤΟ), zinc oxide (ζη〇), aluminum gallium arsenide (AlGaAs), gallium nitride (GaN), gallium phosphide (GaP), gallium arsenide (GaAs) and gallium phosphide (GaAsP) ) the group formed. 9. The light-emitting element of claim 1, wherein the first pattern structure comprises a pattern selected from the group consisting of a periodic structure, a quasi-periodic structure, and an irregular structure. The light-emitting element of claim 1, wherein the light extraction layer further comprises a second image of FIG. 12 M 394 577 Lb, and the structure is formed on the first pattern structure. ... illuminating a piece of light ‘where the second _ structure comprises a group u = a group of a quasi-periodic structure and an irregular structure. 2. The light-emitting element according to the item K), wherein the ten convex portions and the concave portion are made of 1 _, σ, and the σ structure is a plurality of ϋ ^ phase, the second, the second, and the plurality of convex portions are cut. The distance between the t-points is between about α6 μm and 7 μm. The light-emitting element of the second aspect, wherein the first-pattern structure and the second structure comprise a plurality of convex portions and concave portions, and the plurality of second pattern structures refers to the plurality of concave portions of the first pattern structure. And a plurality of concave portions of the second pattern structure are located above the plurality of convex portions of the first-shaped dragon structure. 14. The illuminating element according to claim 1 , wherein the first bribe structure and the second pattern, the θ structure respectively comprise a plurality of convex portions and concave portions, and the plurality of convex portions of the second pattern structure are located at the first A plurality of recesses of a pattern structure and a plurality of recesses of the second pattern structure are located over a plurality of recesses of the first pattern structure. 15. The illuminating element of claim 1, wherein the illuminating layer comprises a first upper surface and the light extraction layer is adjacent to the substrate, the subordinate layer comprises a second upper surface, wherein the upper surface and the second surface The shortest distance to the upper surface is between about 微米6 μm and 7 μm. , 13