CN102916102A - Optoelectronic component - Google Patents

Abstract

A photoelectric element comprises: a semiconductor stack, comprising: a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode have a minimum distance D1; a third electrode formed on a portion of the first electrode and electrically connected to the first electrode; and a fourth electrode formed on a portion of the first electrode and a portion of the second electrode and electrically connected to the second electrode, wherein the third electrode and the fourth electrode have a minimum distance D2, and the minimum distance D2 between the third electrode and the fourth electrode is less than the minimum distance D1 between the first extension electrode and the second electrode. The photoelectric element of the present invention has a higher light extraction efficiency.

Description

Photoelectric components

technical field

The present invention relates to a photoelectric element structure capable of improving light extraction efficiency.

Background technique

Light-emitting diodes are a widely used light source in semiconductor components. Compared with traditional incandescent light bulbs or fluorescent tubes, light-emitting diodes have the characteristics of energy saving and long service life, so they gradually replace traditional light sources and are used in various fields, such as traffic signs, backlight modules, street lights Lighting, medical equipment and other industries.

With the application and development of light-emitting diode light sources, the demand for brightness is getting higher and higher. How to increase its luminous efficiency to improve its brightness has become an important direction for the industry to work together.

Figure 1 depicts an LED package 10 for semiconductor light-emitting elements in the prior art: it includes a semiconductor LED chip 12 packaged by a package body 11, wherein the semiconductor LED chip 12 has a p-n junction 13, and the package body 11 is usually a thermosetting material , such as epoxy or thermoplastic materials. The semiconductor LED chip 12 is connected to two conductive frames 15 , 16 through a wire 14 . Because epoxy resin (epoxy) will degrade in high temperature, so it can only work in low temperature environment. In addition, epoxy resin (epoxy) has high thermal resistance, so that the structure in the first figure only provides a high-resistance heat dissipation path for the semiconductor LED chip 12, which limits the application of low power consumption of the LED 10.

Contents of the invention

In view of this, the present invention proposes a flip chip photoelectric element structure.

The invention discloses a photoelectric element, comprising: a semiconductor stack, including: a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second The electrodes are electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode have a minimum distance D1; a third electrode is formed on part of the first electrode and is electrically connected to the first electrode; and a fourth electrode is formed On part of the first electrode and part of the second electrode and electrically connected to the second electrode, wherein the third electrode and the fourth electrode have a minimum distance D2, and the minimum distance D2 between the third electrode and the fourth electrode is smaller than the first electrode A minimum distance D1 between the extension electrode and the second electrode.

The above description is only an overview of the technical solution of the present invention. In order to better understand the technical means of the present invention, it can be implemented according to the contents of the description, and in order to make the above and other purposes, features and advantages of the present invention more obvious and understandable , the following preferred embodiments are specifically cited below, and are described in detail as follows in conjunction with the accompanying drawings.

Description of drawings

Fig. 1 is a structural diagram of a conventional light-emitting element.

2A-2D, 2F-2H are top views of the light-emitting element of the first embodiment of the present invention.

FIG. 2E is a cross-sectional view of the light emitting element of the first embodiment of the present invention.

3A-3D are top views of a light emitting element according to a second embodiment of the present invention.

Detailed ways

In order to make the description of the present invention more detailed and complete, please refer to the following description together with the illustrations in FIG. 2A to FIG. 3C . As illustrated in Figures 2A to 2H, the top view of the optoelectronic element according to the first embodiment of the present invention is as follows: As shown in Figure 2A, the optoelectronic element of the first embodiment of the present invention includes a substrate 100, a first semiconductor layer 101 , a first electrode 102 and a first extension electrode 103 protruding from the first electrode 102 . An active layer (not shown) and a second semiconductor layer (not shown) are formed on the first semiconductor layer 101 , and a second electrode 104 is formed on the second semiconductor layer (not shown).

In addition, as shown in FIG. 2B , the second electrode 104' formed on the second semiconductor layer 1012 also includes at least one second extension electrode 1041 extending from the second electrode 104'. In one embodiment, at least one second extension electrode 1041 can be formed between two first extension electrodes 103 . In one embodiment, a reflective layer (not shown) may also be selectively formed on the second semiconductor layer 1012 not covered by the second electrode 104 and the second extension electrode 1041 to increase reflective efficiency. Wherein, the above-mentioned first extension electrode 103 and the second extension electrode 1041 may be in an arc shape or a curved shape according to different designs.

Then continue to FIG. 2A, as shown in FIG. 2C, a first insulating layer 105 covers part of the second electrode 104 and part of the first extension electrode 103, so that the first electrode 102, part of the first extension electrode 103 and part of the The second electrode 104 is exposed. Therein, a minimum distance D1 between the first extension electrode 103 and the second electrode 104 can be defined. The minimum distance D1 between the first extension electrode 103 and the second electrode 104 may be 10-50 μm, or 10-40 μm, or 10-30 μm, or 10-20 μm, or 10-15 μm.

Finally, as shown in FIG. 2D , a third electrode 106 can be formed on the first electrode 102 , the first extension electrode 103 and the first insulating layer 105 , and electrically connected with the first electrode 102 and the first extension electrode 103 . A fourth electrode 107 can be formed on the second electrode 104 and part of the first insulating layer 105 , and electrically connected to the second electrode 104 .

Wherein the third electrode 106 may comprise at least one first planar region 1061 and at least one first protruding portion 1062: the first planar region 1061 may be substantially a rectangular structure, and at least one first protruding portion 1062 may extend from the first protruding portion 1062. A planar region 1061 covers the exposed first extension electrode 103 not covered by the first planar region 1061 .

The fourth electrode 107 may include at least one second planar region 1071 and at least one second protrusion 1072: the second planar region 1071 may be substantially in a rectangular structure, and at least one second protrusion 1072 may extend from the second The planar region 1071 covers the part of the first insulating layer 105 not covered by the second planar region 1071 . Wherein the first protruding portion 1062 and the second protruding portion 1072 can define a minimum distance D2. The minimum distance D2 between the first protruding portion 1062 and the second protruding portion 1072 may be 1˜10 μm, or 2˜10 μm, or 4˜10 μm, or 6˜10 μm, or 8˜10 μm.

In this embodiment, the first protruding portion 1062 and the second protruding portion 1072 can be as close as possible to increase the covered area of the first extension electrode 103 and reduce the uncovered area of the first insulating layer 105 to increase The contact area between the third electrode 106 and the first extension electrode 103 increases electrical reliability, and reduces the exposed area of the first insulating layer 105 , thereby increasing the reflection area to reflect light to increase forward light output.

In one embodiment, in order to achieve the above functions, the minimum distance D2 between the first protruding portion 1062 and the second protruding portion 1072 should be minimized as much as possible, and the distance between the first protruding portion 1062 and the second protruding portion 1072 The minimum distance D2 may be smaller than the minimum distance D1 between the first extension electrode 103 and the second electrode 104 .

In one embodiment, the area of the first extended electrode 103 not covered by the third electrode 106 and the fourth electrode 107 is less than 2%, or 1.8%, or 1.5%, or 1.3%, or 1%, or 0.8%.

As shown in FIG. 2E, it is a schematic cross-sectional view showing the dotted line position in FIG. 2D of this embodiment, including a substrate 100, a first semiconductor layer 101, an active layer 1011 and a second semiconductor layer 1012 formed on the substrate 100. , and the first electrode 102 and the second electrode 104 formed on the first semiconductor layer 101 and the second semiconductor layer 1012 respectively. As described above, the first electrode 102 and the second electrode 104 are separated by the first insulating layer 105 , and the third electrode 106 and the fourth electrode 107 are respectively formed on the first electrode 102 and the second electrode 104 .

As shown in FIG. 2F , in one embodiment, a second insulating layer 108 can also be formed to cover the first protruding portion 1062 and the second protruding portion 1072 and part of the first extension electrode 103 and part of the first insulating layer. Layer 105 , so as to avoid the risk of short circuit caused by the reduction of the minimum distance D2 between the first protruding portion 1062 and the second protruding portion 1072 .

As shown in FIG. 2G , in one embodiment, a first bonding pad (bonding pad) 109 and a second bonding pad 110 may be formed on the third electrode 106 and the fourth electrode 107 respectively. The first bonding pad 109 and the second bonding pad 110 can be roughly rectangular in shape, and define a minimum distance D3 between the first bonding pad 109 and the second bonding pad 110 . In one embodiment, the minimum distance D2 between the first protruding portion 1062 and the second protruding portion 1072 may be smaller than the minimum distance D3 between the first pad 109 and a second pad 110, wherein the first pad 109 and the second pad 110 The minimum distance D3 of a second pad 110 may be between 40 μm-600 μm, or 60 μm-600 μm, or 80 μm-600 μm, or 100 μm-600 μm, or 150 μm-600 μm, or 200 μm-600 μm, or 250 μm-600 μm, or 300 μm- 600 μm, or 350 μm to 600 μm, or 400 μm to 600 μm, or 450 μm to 600 μm, or 500 μm to 600 μm, or 550 μm to 600 μm.

As shown in FIG. 2H , in one embodiment, a plurality of second pads 110' can be formed on the fourth electrode 107 without covering the first extension electrode 103. Referring to FIG.

The materials of the first electrode 102, the first extension electrode 103, the second electrode 104, the third electrode 106, the fourth electrode 107, the first welding pad 109 and a second welding pad 110, 110' can be selected from: chromium ( Metals such as Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminum (Al), tungsten (W), tin (Sn), or silver (Ag) Material.

As shown in Figures 3A to 3C, the top view of the optoelectronic element according to the second embodiment of the present invention is as follows: As shown in Figure 3A, the optoelectronic element of the second embodiment of the present invention includes a substrate 200, a first semiconductor layer 201 , a first electrode 202 and a first extension electrode 203 extending from the first electrode 202 . After that, an active layer (not shown) and a second semiconductor layer (not shown) are formed on the first semiconductor layer 201, and a second electrode 204 is formed on the second semiconductor layer (not shown), and define A minimum distance D1 between the first extension electrode 203 and the second electrode 204 . The minimum distance D1 between the first extension electrode 203 and the second electrode 204 may be 10-50 μm, or 10-40 μm, or 10-30 μm, or 10-20 μm, or 10-15 μm.

In addition, the second electrode 204 may also include at least one second extension electrode (not shown) extending from the second electrode 204 . In one embodiment, at least one second extension electrode (not shown) may be formed between two first extension electrodes 203 . In one embodiment, a reflective layer (not shown) may also be selectively formed on the second semiconductor layer (not shown) not covered by the second electrode 204 and the second extension electrode (not shown), so as to increase the reflection efficiency. Wherein, the above-mentioned first extension electrode 203 and the second extension electrode (not shown) may be in an arc shape or a curved shape according to different designs.

Next, a first insulating layer 205 is used to cover part of the second electrode 204 and part of the first extension electrode 203 , so that the first electrode 202 , part of the first extension electrode 203 and part of the second electrode 204 are exposed.

Finally, a third electrode 206 can be formed on the first electrode 202 , the first extension electrode 203 and the first insulating layer 205 , and electrically connected with the first electrode 202 and the first extension electrode 203 . At least one fourth electrode 207 can be formed on the second electrode 204 and part of the first insulating layer 205 , and is electrically connected to the second electrode 204 .

Wherein the third electrode 206 can be a comb shape, including at least one first planar area 2061 and at least one first protruding portion 2062: the first planar area 2061 can be roughly a rectangular structure, at least one first protruding portion 2062 can extend from the first planar region 2061 and cover the exposed first extension electrode 203 not covered by the first planar region 2061 . In this embodiment, the side length of the above-mentioned first protruding portion 2062 parallel to the long end of the first extension electrode 203 is longer than the side length perpendicular to the long end of the first extension electrode 203 .

The fourth electrode 207 may be substantially in a rectangular structure, covering the first extension electrode 203 covered by the first insulating layer 205 . Wherein the first protruding portion 2062 and the fourth electrode 207 can define a minimum distance D2. The minimum distance D2 between the first protruding portion 2062 and the fourth electrode 207 may be 1-10 μm, or 2-10 μm, or 4-10 μm, or 6-10 μm, or 8-10 μm.

In this embodiment, by designing the third electrode 206 into a comb shape and precisely aligning with the first electrode 202 and the first extension electrode 203, the minimum design of the third electrode 206 and the fourth electrode 207 can be achieved to save material costs .

In this embodiment, the first protruding portion 2062 and the fourth electrode 207 can be as close as possible to increase the covered area of the first extension electrode 203 and reduce the uncovered area of the first insulating layer 205 to increase the third The contact area between the electrode 206 and the first extension electrode 203 increases the electrical reliability, and reduces the exposed area of the first insulating layer 205, thereby increasing the reflection area, and reflecting the light to increase the forward light emission.

In one embodiment, in order to achieve the above functions, the minimum distance D2 between the first protruding portion 2062 and the fourth electrode 207 should be minimized as much as possible, and the minimum distance D2 between the first protruding portion 2062 and the fourth electrode 207 is It may be smaller than the minimum distance D1 between the first extension electrode 203 and the second electrode 204 .

In one embodiment, the area of the first extended electrode 203 not covered by the third electrode 206 and the fourth electrode 207 is less than 2%, or 1.8%, or 1.5%, or 1.3%, or 1%, or 0.8%.

As shown in FIG. 3B , in one embodiment, a second insulating layer 208 can also be formed to cover the first protruding portion 2062 and the fourth electrode 207 and part of the first extension electrode 203 and part of the first insulating layer 205. , so as to avoid the risk of short circuit caused by the reduction of the minimum distance D2 between the first protruding portion 2062 and the fourth electrode 207 .

As shown in FIG. 3C , in one embodiment, a first bonding pad (bonding pad) 209 and a second bonding pad 210 may be formed on the third electrode 206 and the fourth electrode 207 respectively. The first pad 209 may include at least two parts, including a comb-shaped first region 2091 formed on the above-mentioned third electrode 206 and at least a second region 2092 formed between the two first extension electrodes 203 and the first insulating layer 205 above. The second welding pad 210 can be roughly a rectangular structure, and defines a minimum distance D3 between a first welding pad 209 and a second welding pad 210. In one embodiment, the first protruding portion 2062 and the fourth electrode The minimum distance D2 of 207 may be smaller than the minimum distance D3 of the first pad 209 and a second pad 210 . The minimum distance D3 between the first pad 209 and a second pad 210 can be between 40 μm-600 μm, or 60 μm-600 μm, or 80 μm-600 μm, or 100 μm-600 μm, or 150 μm-600 μm, or 200 μm-600 μm, or 250 μm to 600 μm, or 300 μm to 600 μm, or 350 μm to 600 μm, or 400 μm to 600 μm, or 450 μm to 600 μm, or 500 μm to 600 μm, or 550 μm to 600 μm.

In this embodiment, the second region 2092 of the first pad 209 is not connected to the first electrode 202 , the first electrode extension 203 , the second electrode 204 , the third electrode 206 , the fourth electrode 207 , and the second pad 210 . , and the first region 2091 of the first pad 209 are electrically connected, and the material of the second region 2092 is selected from materials with high thermal conductivity and high reflectivity, such as copper (Cu), aluminum (Al), tin (Sn) , gold (Au), platinum (Pt), silver (Ag) and other materials with thermal conductivity greater than 50W/ml and reflectivity greater than 50%. This design can prevent the optoelectronic element from being directly pulled to the first extension electrode 203 and the third electrode 206 when subjected to thrust in the subsequent flip-chip process, and can increase the strength of the element, reduce the risk of failure, and use high thermal conductivity The coefficient and the characteristics of the high-reflectivity material make the second region 2092 serve as a heat dissipation path for the photoelectric element, thereby increasing the reflection area and reflecting the light to increase the forward light emission.

As shown in FIG. 3D , in one embodiment, a plurality of second pads 210' can be formed on the fourth electrode 207 without covering the first extension electrode 203. Referring to FIG.

The materials of the first electrode 202, the first extended electrode 203, the second electrode 204, the third electrode 206, the fourth electrode 207, the first welding pad 209 and a second welding pad 210, 210' can be selected from: chromium ( Metals such as Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminum (Al), tungsten (W), tin (Sn), or silver (Ag) Material.

Specifically, optoelectronic components include light-emitting diodes (LEDs), photodiodes (photodiodes), photoresistors (photoresisters), lasers (lasers), infrared emitters (infrared emitters), organic light-emitting diodes (organic At least one of light-emitting diode) and solar cell (solar cell). The substrate 100, 200 is a growth and/or carrying base. Candidate materials may include conductive substrates or non-conductive substrates, light-transmissive substrates or light-impermeable substrates. One of the conductive substrate materials can be germanium (Ge), gallium arsenide (GaAs), indium phosphorus (InP), silicon carbide (SiC), silicon (Si), lithium aluminate (LiAlO2), zinc oxide (ZnO) , Gallium Nitride (GaN), Aluminum Nitride (AlN), Metal. One of the transparent substrate materials can be sapphire (Sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), glass, diamond, CVD diamond, and diamond-like Carbon (Diamond-Like Carbon; DLC), spinel (spinel, MgAl2O4), aluminum oxide (Al2O3), silicon oxide (SiOX) and lithium gallate (LiGaO2).

The above-mentioned first semiconductor layer 101, 201 and the second semiconductor layer (not shown) are at least two parts of each other with different electrical properties, polarity or dopant, or a single layer of semiconductor material used to provide electrons and holes respectively or multiple layers ("multi-layer" refers to two or more layers, the same below.), the electrical selection can be a combination of at least any two of p-type, n-type, and i-type. The active layer (not shown) is located between the first semiconductor layer 101, 201 and the second semiconductor layer (not shown), and is a region where electric energy and light energy may be converted or induced to convert. Those that convert electrical energy or induce light energy are, for example, light-emitting diodes, liquid crystal displays, and organic light-emitting diodes; those that convert light energy or induce electrical energy are, for example, solar cells and photodiodes. The materials of the first semiconductor layer 101, 201, the active layer (not shown) and the second semiconductor layer (not shown) include one or more elements selected from gallium (Ga), aluminum (Al), indium (In ), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si).

The photoelectric element according to another embodiment of the present invention is a light-emitting diode, and its light-emitting spectrum can be adjusted by changing the physical or chemical elements of the semiconductor single layer or multiple layers. Commonly used materials are, for example, aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series, and the like. The structure of the active layer (not shown) is, for example: single heterostructure (single heterostructure; SH), double heterostructure (double heterostructure; DH), double-side double heterostructure (double-side double heterostructure; DDH), or multiple Layer quantum well (multi-quantμm well; MQW). Furthermore, adjusting the logarithm of the quantum well can also change the emission wavelength.

In an embodiment of the present invention, a buffer layer (not shown in the figure) may optionally be included between the first semiconductor layer 101, 201 and the substrate 100, 200. The buffer layer is between the two material systems, making the material system of the substrate "transition" to the material system of the semiconductor system. For the structure of the light emitting diode, on the one hand, the buffer layer is a material layer used to reduce the lattice mismatch between the two materials. On the other hand, the buffer layer can also be a single layer, multi-layer or structure used to combine two materials or two separate structures, and its optional materials are, for example, organic materials, inorganic materials, metals, and semiconductors; Optional structures are, for example: reflective layer, thermal conductive layer, conductive layer, ohmic contact layer, anti-deformation layer, stress release layer, stress adjustment layer, bonding layer, Wavelength conversion layer, mechanical fixing structure, etc. In one embodiment, the material of the buffer layer may be AlN or GaN, and the formation method may be sputtering (Sputter) or atomic layer deposition (Atomic Layer Deposition, ALD).

A contact layer (not shown) is optionally formed on the second semiconductor layer (not shown). The contact layer is disposed on a side of the second semiconductor layer (not shown) away from the active layer (not shown). Specifically, the contact layer may be an optical layer, an electrical layer, or a combination thereof. The optical layer can modify electromagnetic radiation or light from or into the active layer (not shown). "Change" as used herein refers to changing at least one optical characteristic of electromagnetic radiation or light, the aforementioned characteristics including but not limited to frequency, wavelength, intensity, flux, efficiency, color temperature, color rendering (rendering index), light field (light field), and the angle of view (angle of view). The electrical layer can cause the magnitude, density, distribution, or tendency to change of at least one of voltage, resistance, current, and capacitance between any set of opposite sides of the contact layer. The constituent materials of the contact layer include oxides, conductive oxides, transparent oxides, oxides with a transmittance of 50% or more, metals, relatively light-transmitting metals, metals with a transmittance of 50% or more, organic matter, and inorganic substances. At least one of materials, phosphors, phosphors, ceramics, semiconductors, doped semiconductors, and undoped semiconductors. In some applications, the material of the contact layer is at least one of indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. If it is a relatively light-transmitting metal, its thickness is about 0.005 μm to 0.6 μm.

The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any form. Although the present invention has been disclosed as above with preferred embodiments, it is not intended to limit the present invention. Anyone familiar with this field Those skilled in the art, without departing from the scope of the technical solution of the present invention, may use the technical content disclosed above to make some changes or modify them into equivalent embodiments with equivalent changes, but as long as they do not depart from the technical solution of the present invention, the Technical Essence Any simple modifications, equivalent changes and modifications made to the above embodiments still fall within the scope of the technical solution of the present invention.

Claims (19)

1. a photoelectric cell is characterized in that, comprises:

The semiconductor lamination comprises: one first semiconductor layer, an active layers, and one second semiconductor layer;

One first electrode and this first semiconductor layer are electrically connected;

One second electrode and this second semiconductor layer are electrically connected, and wherein this first electrode and this second electrode have a minimum range (D1);

One third electrode is formed on this first electrode of part and with this first electrode and is electrically connected; And

One the 4th electrode is formed on this first electrode of part and on this second electrode of part and with this second electrode and is electrically connected, wherein this third electrode and the 4th electrode have a minimum range (D2), and the minimum range (D2) of this third electrode and the 4th electrode is less than the minimum range (D1) of this first electrode and this second electrode.

2. photoelectric cell as claimed in claim 1 is characterized in that, more comprise a substrate be formed on this semiconductor laminated on, wherein this substrate and this first electrode are formed on this semiconductor laminated opposite side.

3. photoelectric cell as claimed in claim 1 is characterized in that, this first electrode comprises an extension electrode, and/or this second electrode comprises one second extension electrode.

4. photoelectric cell as claimed in claim 1, it is characterized in that, the element that the material of this first semiconductor layer, this active layers and this second semiconductor layer comprises one or more is selected from gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) and consists of group.

5. photoelectric cell as claimed in claim 1, it is characterized in that, the material of this first electrode, the second electrode, third electrode and the 4th electrode can be selected from: chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminium (Al), tungsten (W), tin (Sn) or silver metal materials such as (Ag).

6. photoelectric cell as claimed in claim 1, it is characterized in that, this third electrode can comprise one first plane area and at least one the first protuberance, and this first plane area can roughly be a rectangle structure, and this first protuberance is extensible from this first plane area and cover this first electrode that exposes that is not covered by this first plane area.

7. photoelectric cell as claimed in claim 1, it is characterized in that, the 4th electrode can comprise one second plane area and at least one the second protuberance, and this second plane area can roughly be a rectangle structure, and this second protuberance is extensible from this second plane area and cover this first electrode that exposes that is not covered by this second plane area.

8. photoelectric cell as claimed in claim 1 is characterized in that, the area that this first electrode is not covered by this third electrode and the 4th electrode is less than 2% of this first electrode gross area.

9. photoelectric cell as claimed in claim 1, it is characterized in that, this third electrode can be a comb shape, comprise one first plane area and at least one the first protuberance, and this first plane area can roughly be a rectangle structure, and this first protuberance is extensible from this first plane area and cover this first electrode that exposes that is not covered by this first plane area, and the 4th electrode can be roughly this first electrode of a rectangle structure and cover part.

10. photoelectric cell as claimed in claim 9 is characterized in that, the length of side of parallel this first electrode long end of this first protuberance is greater than the length of side of vertical the first electrode long end.

11. photoelectric cell as claimed in claim 1 is characterized in that, comprises more that one first weld pad is formed on this third electrode and at least one the second weld pad is formed on the 4th electrode.

12. photoelectric cell as claimed in claim 11, it is characterized in that, this first weld pad and this second weld pad have a minimum range (D3), and the minimum range (D2) of this third electrode and the 4th electrode is less than the minimum range (D3) of this first weld pad and this second weld pad.

13. photoelectric cell as claimed in claim 11, it is characterized in that, the first district and one that this first weld pad can comprise a comb shape structure is roughly rectangular Second Region, and wherein this first district covers on this third electrode and this Second Region is formed between two these first electrodes.

14. photoelectric cell as claimed in claim 13 is characterized in that, more comprise an insulating barrier and be formed on this first electrode and this second electrode, and this Second Region is positioned on this insulating barrier.

15. photoelectric cell as claimed in claim 13 is characterized in that, the material of this Second Region be selected from conductive coefficient greater than 50W/ml and reflectivity greater than 50% material.

16. photoelectric cell as claimed in claim 15 is characterized in that, the material of this Second Region comprises copper (Cu), aluminium (Al), tin (Sn), gold (Au), platinum (Pt), silver (Ag) and alloy thereof.

17. photoelectric cell as claimed in claim 1 is characterized in that, the minimum range (D1) of this first electrode and this second electrode can be between 10 ~ 50 μ m, and/or the minimum range (D2) of this this third electrode and the 4th electrode can be between 1 ~ 10 μ m.

18. photoelectric cell as claimed in claim 12 is characterized in that, the minimum range (D3) of this this first weld pad and this second weld pad can be between 40 μ m ~ 600 μ m.

19. photoelectric cell as claimed in claim 3 is characterized in that, this first electrode and the second extension electrode can be an arc or curved shape.

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