CN102916102A - Optoelectronic component - Google Patents
Optoelectronic component Download PDFInfo
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- CN102916102A CN102916102A CN2012100814049A CN201210081404A CN102916102A CN 102916102 A CN102916102 A CN 102916102A CN 2012100814049 A CN2012100814049 A CN 2012100814049A CN 201210081404 A CN201210081404 A CN 201210081404A CN 102916102 A CN102916102 A CN 102916102A
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
Abstract
An optoelectronic device, comprising: a semiconductor stack, comprising: a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer, wherein the first electrode and the second electrode have a minimum distance D1; a third electrode formed on a portion of the first electrode and electrically connected to the first electrode; and a fourth electrode formed on a portion of the first electrode and a portion of the second electrode and electrically connected to the second electrode, wherein the third electrode and the fourth electrode have a minimum distance D2, and the minimum distance D2 between the third electrode and the fourth electrode is smaller than the minimum distance D1 between the first extension electrode and the second electrode. The photoelectric element of the invention has higher light extraction efficiency.
Description
Technical field
The invention relates to a kind of photoelectric cell structure of promoting light extraction efficient.
Background technology
Light-emittingdiode is a kind of light source that is widely used in the semiconductor element.Compared to traditional incandescent lamp bulb or fluorescent lamp, light-emittingdiode has long characteristic of power saving and useful life, therefore replaces conventional light source gradually and is applied to various fields, such as industries such as traffic sign, backlight module, street lighting, Medical Devices.
Along with the application of luminous dipolar object light source is more and more higher for the demand of brightness with development, how to increase its luminous efficiency to improve its brightness, just become the important directions that industrial circle is made joint efforts.
The 1st figure has described the LED encapsulation 10 that is used for semiconductor light-emitting elements in the prior art: comprise the semiconductor LED wafer 12 by packaging body 11 encapsulation, wherein semiconductor LED wafer 12 has a p-n junction 13, packaging body 11 is thermosets normally, for example epoxy resin (epoxy) or thermoplastic material.Semiconductor LED wafer 12 sees through a bonding wire (wire) 14 and is connected with two conduction racks 15,16.Because epoxy resin (epoxy) has deteriorated (degrading) phenomenon in high temperature, therefore can only operate at low temperature environment.In addition, the thermal resistance that epoxy resin (epoxy) tool is very high (thermal resistance), so that the structure of the first figure only provides the heat dissipation approach of semiconductor LED wafer 12 high value, and the low-power consumption that has limited LED 10 is used.
Summary of the invention
In view of this, the present invention proposes one and covers crystalline substance (flip chip) formula photoelectric cell structure.
The present invention discloses a kind of photoelectric cell, comprises: the semiconductor lamination comprises: one first semiconductor layer, an active layers, and one second semiconductor layer; One first electrode and the first semiconductor layer are electrically connected; One second electrode and the second semiconductor layer are electrically connected, and wherein the first electrode and the second electrode have a minimum range D1; One third electrode is formed on part the first electrode and with the first electrode and is electrically connected; And one the 4th electrode is formed on part the first electrode and part the second electrode on and be electrically connected with the second electrode, wherein third electrode and the 4th electrode have a minimum range D2, and the minimum range D2 of third electrode and the 4th electrode is less than the minimum range D1 of the first extension electrode and the second electrode.
Above-mentioned explanation only is the general introduction of technical solution of the present invention, for can clearer understanding technological means of the present invention, and can be implemented according to the content of specification, and for above and other objects of the present invention, feature and advantage can be become apparent, below especially exemplified by preferred embodiment, and the cooperation accompanying drawing, be described in detail as follows.
Description of drawings
Fig. 1 is existing light emitting element structure figure.
Fig. 2 A-2D, 2F-2H are the light-emitting component top views of first embodiment of the invention.
Fig. 2 E is the light-emitting component profile of first embodiment of the invention.
Fig. 3 A-3D is the light-emitting component top view of second embodiment of the invention.
Embodiment
In order to make narration of the present invention more detailed and complete, please refer to the diagram of following description and cooperation Fig. 2 A to Fig. 3 C.As illustrated in Fig. 2 A～Fig. 2 H, top view according to the photoelectric cell of first embodiment of the invention is as follows: shown in Fig. 2 A, the photoelectric cell of first embodiment of the invention comprises a substrate 100, one first semiconductor layers 101, one first electrode 102 and first extension electrode 103 of stretching from the first electrode 102 edges.On the first semiconductor layer 101, form an active layers (not shown) and one second semiconductor layer (not shown), and on the second semiconductor layer (not shown), form one second electrode 104.
In addition, shown in Fig. 2 B, the second electrode 104 ' that is formed on the second semiconductor layer 1012 also comprises at least one extension from the second extension electrode 1041 of the second electrode 104 '.In one embodiment, at least one the second extension electrode 1041 can be formed between two the first extension electrodes 103.In one embodiment, also can on not by the second semiconductor layer 1012 of the second electrode 104 and 1041 coverings of the second extension electrode, optionally form a reflector (not shown), to increase reflection efficiency.Wherein, above-mentioned the first extension electrode 103 and the second extension electrode 1041 can be an arc or curved shape according to different designs.
Then continue Fig. 2 A, shown in Fig. 2 C, with the second electrode 104 of one first insulating barrier, 105 cover parts and the first extension electrode 103 of part, the first extension electrode 103 of the first electrode 102, part and the second electrode 104 of part are exposed out.The minimum range D1 of definable one first extension electrode 103 and the second electrode 104 wherein.Wherein the minimum range D1 of the first extension electrode 103 and the second electrode 104 can be between 10～50 μ m or 10～40 μ m or 10～30 μ m or 10～20 μ m or 10～15 μ m.
At last, a third electrode 106 can be formed on the first electrode 102, the first extension electrode 103 and the first insulating barrier 105 shown in Fig. 2 D, and is electrically connected with the first electrode 102, the first extension electrode 103.One the 4th electrode 107 can be formed on the second electrode 104 and part the first insulating barrier 105, and is electrically connected with the second electrode 104.
Wherein third electrode 106 can comprise at least one the first plane area 1061 and 1062: the first plane areas 1061 of at least one the first protuberance can roughly be a rectangle structure, and at least one the first protuberance 1062 is extensible from the first plane area 1061 and cover the first extension electrode 103 that exposes that is not covered by the first plane area 1061.
The 4th electrode 107 can comprise at least one the second plane area 1071 and 1072: the second plane areas 1071 of at least one the second protuberance can roughly be a rectangle structure, and at least one the second protuberance 1072 is extensible from the second plane area 1071 and cover part the first insulating barrier 105 that is not covered by the second plane area 1071.Wherein the first protuberance 1062 and the second protuberance 1072 definables go out a minimum range D2.Wherein the minimum range D2 of the first protuberance 1062 and the second protuberance 1072 can be between 1～10 μ m or 2～10 μ m or 4～10 μ m or 6～10 μ m or 8～10 μ m.
In the present embodiment, above-mentioned the first protuberance 1062 and the second protuberance 1072 can be as far as possible close, to increase the capped zone of the first extension electrode 103 and to reduce the capped area of the first insulating barrier 105, increase electrical confidence level with the contact area that increases third electrode 106 and the first extension electrode 103, and can reduce the area that the first insulating barrier 105 exposes, and then the increase reflective surface area, and with light reflection to increase the forward bright dipping.
In one embodiment, for reaching above-mentioned function, the minimum range D2 of the first protuberance 1062 and the second protuberance 1072 should minimize as far as possible, and the minimum range D2 of the first protuberance 1062 and the second protuberance 1072 distance can be less than the minimum range D1 of the first extension electrode 103 and the second electrode 104.
In one embodiment, the area that do not covered by third electrode 106 and the 4th electrode 107 of the first extension electrode 103 is less than 2% or 1.8% or 1.5% or 1.3% or 1% or 0.8% of the first extension electrode 103 gross areas.
Shown in Fig. 2 E, it is the generalized section that shows dotted line position among the present embodiment Fig. 2 D, comprise a substrate 100, be formed on one first semiconductor layer 101, an active layers 1011 and one second semiconductor layer 1012 on the substrate 100, and be respectively formed at the first electrode 102 and the second electrode 104 on the first semiconductor layer 101 and the second semiconductor layer 1012.As described above, separate the first electrode 102 and the second electrode 104 with the first insulating barrier 105 first, and on the first electrode 102 and the second electrode 104, form respectively third electrode 106 and the 4th electrode 107.
Shown in Fig. 2 F, in one embodiment, also can form one second insulating barrier 108 and cover above-mentioned the first protuberances 1062 and the first extension electrode 103 of the second protuberance 1072 and part and the first insulating barrier 105 of part, use the short-circuit risks that causes of dwindling of avoiding owing to the minimum range D2 of the first protuberance 1062 and the second protuberance 1072.
Shown in Fig. 2 G, in one embodiment, can form respectively one first weld pad (bonding pad), 109 and 1 second weld pad 110 on third electrode 106 and the 4th electrode 107.The first weld pad 109 and one second weld pad 110 can roughly be a rectangle structure, and define the minimum range D3 of one first weld pad 109 and one second weld pad 110.In one embodiment, the minimum range D2 distance of the first protuberance 1062 and the second protuberance 1072 can be less than the minimum range D3 of the first weld pad 109 and one second weld pad 110, and wherein the minimum range D3 of the first weld pad 109 and one second weld pad 110 can be between 40 μ m～600 μ m, or 60 μ m～600 μ m, or 80 μ m～600 μ m, or 100 μ m～600 μ m, or 150 μ m～600 μ m, or 200 μ m～600 μ m, or 250 μ m～600 μ m, or 300 μ m～600 μ m, or 350 μ m～600 μ m, or 400 μ m～600 μ m, or 450 μ m～600 μ m, or 500 μ m～600 μ m, or 550 μ m～600 μ m.
Shown in Fig. 2 H, in one embodiment, can form most the second weld pads 110 ' on the 4th electrode 107 and not cover the first extension electrode 103.
Above-mentioned the first electrode 102, the first extension electrode 103, the second electrode 104, third electrode 106, the 4th electrode 107, the first weld pad 109 and one second weld pad 110,110 ' material can be selected from: chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminium (Al), tungsten (W), tin (Sn) or silver metal materials such as (Ag).
As illustrated in Fig. 3 A～Fig. 3 C, top view according to the photoelectric cell of second embodiment of the invention is as follows: as shown in Figure 3A, the photoelectric cell of second embodiment of the invention comprises the first extension electrode 203 that a substrate 200, one first semiconductor layers 201, one first electrode 202 and extend out from the first electrode 202.Afterwards, on the first semiconductor layer 201, form an active layers (not shown) and one second semiconductor layer (not shown), and on the second semiconductor layer (not shown), form one second electrode 204, and define the minimum range D1 of one first extension electrode 203 and the second electrode 204.Wherein the minimum range D1 of the first extension electrode 203 and the second electrode 204 can be between 10～50 μ m or 10～40 μ m or 10～30 μ m or 10～20 μ m or 10～15 μ m.
In addition, the second electrode 204 also can comprise at least one extension from the second extension electrode (not shown) of the second electrode 204.In one embodiment, at least one the second extension electrode (not shown) can be formed between two the first extension electrodes 203.In one embodiment, also can on not by the second semiconductor layer (not shown) of the second electrode 204 and the covering of the second extension electrode (not shown), optionally form a reflector (not shown), to increase reflection efficiency.Wherein, above-mentioned the first extension electrode 203 and the second extension electrode (not shown) can be an arc or curved shape according to different designs.
Then, with the second electrode 204 of one first insulating barrier, 205 cover parts and the first extension electrode 203 of part, the first extension electrode 203 of the first electrode 202, part and the second electrode 204 of part are exposed out.
At last, a third electrode 206 can be formed on the first electrode 202, the first extension electrode 203 and the first insulating barrier 205, and is electrically connected with the first electrode 202, the first extension electrode 203.At least one the 4th electrode 207 can be formed on the second electrode 204 and part the first insulating barrier 205, and is electrically connected with the second electrode 204.
Wherein third electrode 206 can be a comb form, comprise 2062: the first plane areas 2061 of at least one the first plane area 2061 and at least one the first protuberance and can roughly be a rectangle structure, at least one the first protuberance 2062 is extensible from the first plane area 2061 and cover the first extension electrode 203 that exposes that is not covered by the first plane area 2061.In the present embodiment, the length of side of parallel the first extension electrode 203 long ends of above-mentioned the first protuberance 2062 is greater than the length of side of vertical the first extension electrode 203 long ends.
The 4th electrode 207 can roughly be a rectangle structure, covers on the first extension electrode 203 that is covered by the first insulating barrier 205.Wherein the first protuberance 2062 and the 4th electrode 207 definables go out a minimum range D2.Wherein the minimum range D2 of the first protuberance 2062 and the 4th electrode 207 can be between 1～10 μ m or 2～10 μ m or 4～10 μ m or 6～10 μ m or 8～10 μ m.
In the present embodiment, by third electrode 206 being designed to comb form and saving material cost with the miniaturized design that the first electrode 202, the 203 accurate contrapositions of the first extension electrode can be reached third electrode 206 and the 4th electrode 207.
In the present embodiment, above-mentioned the first protuberance 2062 and the 4th electrode 207 can be as far as possible close, to increase the capped zone of the first extension electrode 203 and to reduce the capped area of the first insulating barrier 205, increase electrical confidence level with the contact area that increases third electrode 206 and the first extension electrode 203, and can reduce the area that the first insulating barrier 205 exposes, and then the increase reflective surface area, and with light reflection to increase the forward bright dipping.
In one embodiment, for reaching above-mentioned function, the minimum range D2 of the first protuberance 2062 and the 4th electrode 207 should minimize as far as possible, and the minimum range D2 of the first protuberance 2062 and the 4th electrode 207 distance can be less than the minimum range D1 of the first extension electrode 203 and the second electrode 204.
In one embodiment, the area that do not covered by third electrode 206 and the 4th electrode 207 of the first extension electrode 203 is less than 2% or 1.8% or 1.5% or 1.3% or 1% or 0.8% of the first extension electrode 203 gross areas.
Shown in Fig. 3 B, in one embodiment, also can form one second insulating barrier 208 and cover above-mentioned the first protuberances 2062 and the first extension electrode 203 of the 4th electrode 207 and part and the first insulating barrier 205 of part, use the short-circuit risks that causes of dwindling of avoiding owing to the minimum range D2 of the first protuberance 2062 and the 4th electrode 207.
Shown in Fig. 3 C, in one embodiment, can form respectively one first weld pad (bonding pad), 209 and 1 second weld pad 210 on third electrode 206 and the 4th electrode 207.The first weld pad 209 can comprise at least two parts, the first district 2091 that comprises a comb shape is formed on the above-mentioned third electrode 206 and at least one Second Region 2092 is formed between two first extension electrodes 203 and the first insulating barrier 205 on.The second weld pad 210 can roughly be a rectangle structure, and define the minimum range D3 of one first weld pad 209 and one second weld pad 210, in one embodiment, the minimum range D2 of the first protuberance 2062 and the 4th electrode 207 distance can be less than the minimum range D3 of the first weld pad 209 and one second weld pad 210.Wherein the minimum range D3 of the first weld pad 209 and one second weld pad 210 can be between 40 μ m～600 μ m or 60 μ m～600 μ m or 80 μ m～600 μ m or 100 μ m～600 μ m or 150 μ m～600 μ m or 200 μ m～600 μ m or 250 μ m～600 μ m or 300 μ m～600 μ m or 350 μ m～600 μ m or 400 μ m～600 μ m or 450 μ m～600 μ m or 500 μ m～600 μ m or 550 μ m～600 μ m.
In the present embodiment, the Second Region 2092 of the first weld pad 209 is not electrical connected with the first district 2091 of the first electrode 202, the first electrode extension 203, the second electrode 204, third electrode 206, the 4th electrode 207, the second weld pad 210 and the first weld pad 209, and the material of Second Region 2092 is selected from the material that conductive coefficient is high and reflectivity is high, such as copper (Cu), aluminium (Al), tin (Sn), gold (Au), platinum (Pt), silver conductive coefficients such as (Ag) greater than 50W/ml and reflectivity greater than 50% material.This design can make this photoelectric cell in after cover in the brilliant processing procedure at bearing thrust the time can directly not pull the first extension electrode 203 and third electrode 206, and can increase the intensity of element, reduce the risk that lost efficacy, and use the characteristic of high thermal conductivity coefficient and highly reflective material, so that Second Region 2092 can be used as the heat radiation approach of photoelectric cell, and then the increase reflective surface area, and with light reflection to increase the forward bright dipping.
Shown in Fig. 3 D, in one embodiment, can form most the second weld pads 210 ' on the 4th electrode 207 and not cover the first extension electrode 203.
Above-mentioned the first electrode 202, the first extension electrode 203, the second electrode 204, third electrode 206, the 4th electrode 207, the first weld pad 209 and one second weld pad 210,210 ' material can be selected from: chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminium (Al), tungsten (W), tin (Sn) or silver metal materials such as (Ag).
Particularly, photoelectric cell comprises in light-emittingdiode (LED), photoelectricity diode (photodiode), photo resistance (photoresister), laser (laser), infrared emitter (infrared emitter), organic light emitting diode (organic light-emitting diode) and the solar cell (solar cell) at least one.Substrate 100,200 is a growth and/or carrying basis.Candidate material can comprise electrically-conductive backing plate or non-conductive substrate, transparent substrates or light tight substrate.Wherein electrically-conductive backing plate material one can be germanium (Ge), GaAs (GaAs), indium phosphorus (InP), carborundum (SiC), silicon (Si), lithium aluminate (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminium nitride (AlN), metal.Transparent substrates material one can be sapphire (Sapphire), lithium aluminate (LiAlO2), zinc oxide (ZnO), gallium nitride (GaN), aluminium nitride (AlN), glass, diamond, CVD diamond, bores carbon (Diamond-Like Carbon with class; DLC), spinelle (spinel, MgAl2O4), aluminium oxide (Al2O3), silica (SiOX) and lithium gallium oxide (LiGaO2).
Above-mentioned the first semiconductor layer 101, the 201 and second semiconductor layer (not shown) each other at least two parts electrically, polarity or alloy is different or (" multilayer " refers to two layers or more, and be as follows in order to semi-conducting material single or multiple lift that electronics and electric hole are provided respectively.), its electrical selection can for p-type, N-shaped, and the i type at least arbitrarily combination of the two.The active layers (not shown) is between the first semiconductor layer 101, the 201 and second semiconductor layer (not shown), the zone that may change or be induced to change for electric energy and luminous energy.Electric energy changes or brings out the light able one for example is light-emittingdiode, liquid crystal display, organic light emitting diode; Luminous energy changes or brings out electric able one for example is solar cell, photoelectricity diode.The element that above-mentioned the first semiconductor layer 101,201, active layers (not shown) and second its material of semiconductor layer (not shown) comprise one or more is selected from gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) and consists of group.
Photoelectric cell according to another embodiment of the present invention is a light-emittingdiode, and its luminous frequency spectrum can be adjusted by the physics or the tincture that change semiconductor monolayer or multilayer.Material commonly used is such as being AlGaInP (AlGaInP) series, aluminum indium gallium nitride (AlGaInN) series, zinc oxide (ZnO) series etc.The structure example of active layers (not shown) is as being: single heterojunction structure (single heterostructure; SH), double-heterostructure (double heterostructure; DH), bilateral double-heterostructure (double-side double heterostructure; DDH) or multi-layer quantum well (multi-quant μ m well; MQW).Moreover the logarithm of adjusting quantum well also can change emission wavelength.
In one embodiment of the invention, the first semiconductor layer 101,201 and substrate 100,200 still optionally comprise a resilient coating (buffer layer, figure does not show).This resilient coating is between two kinds of material systems, makes the material system " transition " of substrate to the material system of semiconductor system.For the structure of light-emittingdiode, on the one hand, resilient coating is to reduce by two kinds of unmatched material layers of storeroom lattice.On the other hand, resilient coating also can be in order to individual layer, multilayer or structure in conjunction with two kinds of materials or two isolating constructions, and its available material is such as being: organic material, inorganic material, metal, and semiconductor etc.; Its available structure example is as being: reflector, heat-conducting layer, conductive layer, ohmic contact (ohmic contact) layer, anti-deformation layer, Stress Release (stress release) layer, stress adjustment (stress adjustment) layer, engage (bonding) layer, wavelength conversion layer, reach mechanical fixture construction etc.In one embodiment, the material of this resilient coating can be AlN, GaN, and the formation method can be sputter (Sputter) or ald (Atomic Layer Deposition, ALD).
More optionally form a contact layer (not shown) on the second semiconductor layer (not shown).Contact layer is to be arranged at the second semiconductor layer (not shown) away from a side of active layers (not shown).Particularly, contact layer can be the two combination of optical layers, electrical layer or its.Optical layers can change electromagnetic radiation or the light that comes from or enter the active layers (not shown).Refer to change at least a optical characteristics of electromagnetic radiation or light in this alleged " change ", afore-mentioned characteristics is including but not limited to frequency, wavelength, intensity, flux, efficient, colour temperature, color rendering (rendering index), light field (light field), reaches angle of visibility (angle of view).Electrical layer can be so that numerical value, density, the distribution of one change or the trend that changes are arranged at least in the voltage between arbitrary group of opposite side of contact layer, resistance, electric current, electric capacity.The constituent material of contact layer comprises oxide, conductive oxide, transparent oxide, have 50% or the oxide of above penetrance, metal, relatively the printing opacity metal, have 50% or the semiconductor of the metal of above penetrance, organic matter, inanimate matter, fluorescent thing, phosphorescence thing, pottery, semiconductor, doping, and undoped semiconductor in one at least.In some is used, the material of contact layer be tin indium oxide, cadmium tin, antimony tin, indium zinc oxide, zinc oxide aluminum, with zinc-tin oxide in one at least.If relative printing opacity metal, its thickness is about 0.005 μ m～0.6 μ m.
The above, it only is preferred embodiment of the present invention, be not that the present invention is done any pro forma restriction, although the present invention discloses as above with preferred embodiment, yet be not to limit the present invention, any those skilled in the art, within not breaking away from the technical solution of the present invention scope, when the technology contents that can utilize above-mentioned announcement is made a little change or is modified to the equivalent embodiment of equivalent variations, in every case be not break away from the technical solution of the present invention content, any simple modification that foundation technical spirit of the present invention is done above embodiment, equivalent variations and modification all still belong in the scope of technical solution of the present invention.
Claims (19)
1. a photoelectric cell is characterized in that, comprises:
The semiconductor lamination comprises: one first semiconductor layer, an active layers, and one second semiconductor layer;
One first electrode and this first semiconductor layer are electrically connected;
One second electrode and this second semiconductor layer are electrically connected, and wherein this first electrode and this second electrode have a minimum range (D1);
One third electrode is formed on this first electrode of part and with this first electrode and is electrically connected; And
One the 4th electrode is formed on this first electrode of part and on this second electrode of part and with this second electrode and is electrically connected, wherein this third electrode and the 4th electrode have a minimum range (D2), and the minimum range (D2) of this third electrode and the 4th electrode is less than the minimum range (D1) of this first electrode and this second electrode.
2. photoelectric cell as claimed in claim 1 is characterized in that, more comprise a substrate be formed on this semiconductor laminated on, wherein this substrate and this first electrode are formed on this semiconductor laminated opposite side.
3. photoelectric cell as claimed in claim 1 is characterized in that, this first electrode comprises an extension electrode, and/or this second electrode comprises one second extension electrode.
4. photoelectric cell as claimed in claim 1, it is characterized in that, the element that the material of this first semiconductor layer, this active layers and this second semiconductor layer comprises one or more is selected from gallium (Ga), aluminium (Al), indium (In), arsenic (As), phosphorus (P), nitrogen (N) and silicon (Si) and consists of group.
5. photoelectric cell as claimed in claim 1, it is characterized in that, the material of this first electrode, the second electrode, third electrode and the 4th electrode can be selected from: chromium (Cr), titanium (Ti), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), aluminium (Al), tungsten (W), tin (Sn) or silver metal materials such as (Ag).
6. photoelectric cell as claimed in claim 1, it is characterized in that, this third electrode can comprise one first plane area and at least one the first protuberance, and this first plane area can roughly be a rectangle structure, and this first protuberance is extensible from this first plane area and cover this first electrode that exposes that is not covered by this first plane area.
7. photoelectric cell as claimed in claim 1, it is characterized in that, the 4th electrode can comprise one second plane area and at least one the second protuberance, and this second plane area can roughly be a rectangle structure, and this second protuberance is extensible from this second plane area and cover this first electrode that exposes that is not covered by this second plane area.
8. photoelectric cell as claimed in claim 1 is characterized in that, the area that this first electrode is not covered by this third electrode and the 4th electrode is less than 2% of this first electrode gross area.
9. photoelectric cell as claimed in claim 1, it is characterized in that, this third electrode can be a comb shape, comprise one first plane area and at least one the first protuberance, and this first plane area can roughly be a rectangle structure, and this first protuberance is extensible from this first plane area and cover this first electrode that exposes that is not covered by this first plane area, and the 4th electrode can be roughly this first electrode of a rectangle structure and cover part.
10. photoelectric cell as claimed in claim 9 is characterized in that, the length of side of parallel this first electrode long end of this first protuberance is greater than the length of side of vertical the first electrode long end.
11. photoelectric cell as claimed in claim 1 is characterized in that, comprises more that one first weld pad is formed on this third electrode and at least one the second weld pad is formed on the 4th electrode.
12. photoelectric cell as claimed in claim 11, it is characterized in that, this first weld pad and this second weld pad have a minimum range (D3), and the minimum range (D2) of this third electrode and the 4th electrode is less than the minimum range (D3) of this first weld pad and this second weld pad.
13. photoelectric cell as claimed in claim 11, it is characterized in that, the first district and one that this first weld pad can comprise a comb shape structure is roughly rectangular Second Region, and wherein this first district covers on this third electrode and this Second Region is formed between two these first electrodes.
14. photoelectric cell as claimed in claim 13 is characterized in that, more comprise an insulating barrier and be formed on this first electrode and this second electrode, and this Second Region is positioned on this insulating barrier.
15. photoelectric cell as claimed in claim 13 is characterized in that, the material of this Second Region be selected from conductive coefficient greater than 50W/ml and reflectivity greater than 50% material.
16. photoelectric cell as claimed in claim 15 is characterized in that, the material of this Second Region comprises copper (Cu), aluminium (Al), tin (Sn), gold (Au), platinum (Pt), silver (Ag) and alloy thereof.
17. photoelectric cell as claimed in claim 1 is characterized in that, the minimum range (D1) of this first electrode and this second electrode can be between 10 ~ 50 μ m, and/or the minimum range (D2) of this this third electrode and the 4th electrode can be between 1 ~ 10 μ m.
18. photoelectric cell as claimed in claim 12 is characterized in that, the minimum range (D3) of this this first weld pad and this second weld pad can be between 40 μ m ~ 600 μ m.
19. photoelectric cell as claimed in claim 3 is characterized in that, this first electrode and the second extension electrode can be an arc or curved shape.
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| CN108847440A (en) * | 2015-04-22 | 2018-11-20 | 株式会社流明斯 | Light emitting device package |
| CN110047865A (en) * | 2013-09-03 | 2019-07-23 | 晶元光电股份有限公司 | Light-emitting component with multiple light emitting structures |
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