M393794 五、新型說明： 【新型所屬之技術領域】 本新型是有關於一種載板，特別是指一種用於半導體 製程之玻璃載板。 【先前技術】 在半導體製程中，矽晶圓會以可剝離式膠材固定在一 片玻璃載板上，藉由移動玻璃載板的方式，來進行晶圓之 移動輸送，或者是藉由將該玻璃載板固定，以利矽晶圓薄 化或是蝕刻穿孔製程之進行。並於完成製程程序後，以特 定波長之光波由玻璃載板底部照射該可剝離式膠材，使玻 璃載板脫離矽晶圓。而這類玻璃載板之輪送與固定，一般 情況下，都是以一負壓吸盤透過負壓吸附的方式，吸住玻 璃載板背向該矽晶圓之底面，藉由控制裝有負壓吸盤之機 械手臂的作動，進行玻璃載板與矽晶圓之移動與定位。但 疋當有要進行鍍膜或姓刻製程時，由於製程是在真空環境 中進行，所以負壓吸盤無法再適用。 如圖1所不，為解決此問題，目前市面上已有開發出 所謂的靜電吸盤100，該靜電吸盤100包括一内電極1〇1， 及一絕緣地環繞於内電極101徑向外側之環狀外電極102， 透過在該内電極101與外電極1〇2間施加一預定大小之直 流電，使内電極101與外電極1〇2分別帶正電與負電，藉 此使該靜電吸盤100與玻璃載板2〇〇間產生相互吸引之靜 電力’但因玻璃載板200 4阻值高之玻璃材質，所以施加 於靜電吸盤100之直流電通常得要高達3〜5 κν，其產生之 3 M393794 靜電力才足以吸附玻璃載板200’然而，一般半導體製程讲 備設計上可能無法施加此高電壓’而且此高電屋可能會相 對影響半導體製程之鍍膜/蝕刻程序品質。因此，如何降低 靜電吸盤100吸附玻璃載板200所需施加之電壓，而且又 同時保有玻璃載板對特定波長之光波的透光率，以利離型 分離矽晶圓與玻璃載板，是目前亟待克服之重點。 【新型内容】 因此，本新型之目的’即在提供一種可降低靜電吸盤 所需施加之電壓’並具有較佳透光率的玻璃載板。 嫌 於是’本新型半導體用之玻璃載板，適用於被一靜電 吸盤吸附固定，並包含一透明之玻璃板層，及一被覆於玻 璃板層底面並可被所述靜電吸盤之靜電力吸附固定之透明 的靜電吸附層。 · 本新型之功效··透過於該玻璃板層底面被覆該靜電吸 附層的設計’可利用該靜電吸附層之導電特性或半導體特 性，大幅降低施加於靜電吸盤之電壓，並可大幅降低靜電 吸盤對鍍膜或蝕刻程序之影響，有助於提高鍍膜或蝕刻品 _ 質。 【實施方式】 有關本新型之前述及其他技術内容、特點與功效，在 以下配合參考圖式之二個較佳實施例的詳細說明中，將可 清楚的呈現。 在本新型被詳細描述之前，要注意的是，在以下的說 明内容中，類似的元件是以相同的編號來表示。 4 M393794 如圖2所示，本新型半導體用之玻璃載板的第一較佳 貫她例適用於承載晶圓（圖未示），並可被一靜電吸盤900 吸附固定，該靜電吸盤9〇〇具有一内電極9〇1，及一絕緣設 置於内電極901徑向外側之外電極9〇2。該玻璃載板3包含 一玻璃扳層31，及一被覆固定於該玻璃板層31底面之透明 的靜電吸附層32。該玻璃板層31為習知用於承載晶圓之玻 璃板，厚度範圍介於〇.1 mm〜3.2 mm，因此不再詳述。 該靜電吸附層32為雙層結構物，包括一被覆固定於玻 璃板層31底面之透明導電膜321，及一被覆固定於該透明 導電膜321底面之透明絕緣膜322。 該透明導電膜321是由透明導電氧化物（transparent conductive oxide ’TCO)構成，其厚度範圍介於〇 〇1 μιη〜5 〇 μιη。在本實施例中，該透明導電膜321是銦錫氧化物 (indium tin oxide，ΙΤ0)’ 厚度為 〇·12 μιη，但實施時，該透 明導電薄膜321也可選自於由銦錫氧化物（ΙΤ〇)、銦辞氧 化物（ιζο)、氧化鋅鎵（GZ0)、氧化鋁辞（GA〇)以及銦 錫氧化物、銦鋅氧化物、氧化鋅鎵與氧化鋁鋅之混合所構 成的群體。 該透明絕緣膜322是由不導電氧化物構成，厚度範圍 介於0.01 μιη〜5.0 μηι，其目的在於避免該透明導電膜321 與該靜電吸盤900之内、外電極9〇1、9〇2電連接。在本實 施例中，該透明絕緣膜322為氧化矽，但實施時，也可選 用氧化铭、過渡金屬之氧化物’或氧化矽、氧化鋁與過渡 金屬氧化物的一組合。該過渡金屬氧化物是選自於氧化鉻 5 M393794 、氧化錯、氧化鈮、氧化鈕、氧化铪或此等一組合。 透過在該玻璃板層31底面先被覆一層導電之透明導電 膜321，然後再被覆一層絕緣之透明絕緣膜322的雙層靜電 吸附層32設計，可利用該透明導電膜321之導電特性，使 得該靜電吸盤900吸附該玻璃載板3時，僅須對該靜電吸 盤900施加一般半導體製程設備的工作電壓，便可誘使該 透明導電膜321的電子與電洞分別隨内電極9〇1與外電極 902之極性分布’而產生足以吸附該玻璃載板3之靜電力。 在本實施例中’施加於該靜電吸盤900之電壓介於 _ 500〜800 V，已低於1 KV，且遠低於吸附傳統玻璃載板所需 之高電壓（3〜5 KV)，除了可降低整體設備之能耗外，也可 -大幅降低施加於靜電吸盤900之電壓對鍍膜或蝕刻製程品 質的影響。 ' 配合圖3，以本新型玻璃載板3進行透光率測試時，其 透光率依然相當高，所以於玻璃載板3脫離晶圓之製程時 ’用以剝除黏著晶圓與玻璃板層31間之可剝離式膠材的雷 射依然可大量穿透，不會影響玻璃載板3之剝離程序。 · 如圖4所示’本新型半導體用之玻璃載板的第二較佳 實施例與第一實施例的差異處僅在於：該靜電吸附層32之 材質設計。為方便說明，以下將僅針對本實施例與第一實 施例差異處進行說明。 . 配合圖5，在本實施例中，該靜電吸附層32是由具半 導體特性之金屬氧化物塗覆構成的單層結構物，其厚度範 圍介於0·01 μιη〜5 μιη。在本實施例中，該靜電吸附層32為 M393794 氧化鋅（ZnO )，其厚度為1 pm，且以被覆氧化鋅之玻璃載 板3進行光穿透率測試時’其光穿透率依然相當高。 實施時’靜電吸附層32也可用氧化錫、雜質摻入之氧 化鋅、雜質摻入之氧化錫，或氧化辞、氧化錫、雜質摻入 之氣化鋅與雜質摻入之氧化錫的一組合。由於氧化錫薄膜 、雜質摻入之氧化鋅薄膜與雜質掺入之氧化錫薄膜也具高 透光性，所以上述材料製成之玻璃載板3也會具有很高之 光穿透率。 該玻璃載板3使用時，主要是藉由該靜電吸附層32的 半導體特性，來降低玻璃載板3供該靜電吸盤9〇〇吸附之 一側的阻值，進而使施加於該靜電吸盤9〇〇之電壓可相對 降低，有助於降低靜電吸盤900對鍍膜或蝕刻程序之影響 综上所述，透過於該玻璃板層31底面被覆該靜電吸附 層32的設計，可利用該透明導電膜321之導電特性，或者 是該靜電吸附層32 3之靜電吸盤900， 之半導體特性，使得用以吸附玻璃載板 僅需於該内電極901與外電極902間施 加一較低之直流電，便可產生足以吸附該玻璃載板3之靜 電力，所以可大幅降低靜電吸盤9〇〇之能耗，並可大幅降 低靜電吸盤900 之電壓對鍍膜或蝕刻程序之影響，有助於M393794 V. New description: [New technical field] The present invention relates to a carrier board, in particular to a glass carrier for semiconductor manufacturing. [Prior Art] In the semiconductor process, the germanium wafer is fixed on a glass carrier with a peelable adhesive, and the wafer is moved by moving the glass carrier, or by The glass carrier is fixed to facilitate wafer thinning or etching. After the process is completed, the strippable glue is irradiated from the bottom of the glass carrier with a light wave of a specific wavelength to disengage the glass carrier from the wafer. The rounding and fixing of such glass carrier plates are generally carried out by a negative pressure suction cup through a vacuum suction method, and the glass carrier plate is sucked back to the bottom surface of the silicon wafer, and the control is loaded with a negative The movement of the mechanical arm of the suction cup performs the movement and positioning of the glass carrier and the silicon wafer. However, when there is a need for coating or surname processing, the vacuum chuck can no longer be used because the process is carried out in a vacuum environment. As shown in FIG. 1, in order to solve this problem, a so-called electrostatic chuck 100 has been developed on the market, and the electrostatic chuck 100 includes an inner electrode 1〇1 and a ring radially surrounding the inner electrode 101. The external electrode 102 transmits a predetermined amount of direct current between the inner electrode 101 and the outer electrode 1〇2, so that the inner electrode 101 and the outer electrode 1〇2 are positively and negatively charged, respectively, thereby causing the electrostatic chuck 100 and The glass carrier 2 generates an electrostatic force that attracts each other. However, since the glass carrier 200 has a high resistance, the direct current applied to the electrostatic chuck 100 is usually as high as 3 to 5 κν, which produces 3 M393794. The electrostatic force is sufficient to adsorb the glass carrier 200' However, in general, the semiconductor process design may not be able to apply this high voltage' and this high-voltage house may relatively affect the quality of the coating/etching process of the semiconductor process. Therefore, how to reduce the voltage required for the electrostatic chuck 100 to adsorb the glass carrier 200, and at the same time, maintain the transmittance of the glass carrier to light waves of a specific wavelength to facilitate separation and separation of the wafer and the glass carrier. The key to overcome. [New content] Therefore, the object of the present invention is to provide a glass carrier which can reduce the voltage to be applied by the electrostatic chuck and has a preferable light transmittance. It is suspected that the glass carrier of the novel semiconductor is suitable for being adsorbed and fixed by an electrostatic chuck, and comprises a transparent glass plate layer, and is covered on the bottom surface of the glass plate layer and can be adsorbed and fixed by the electrostatic force of the electrostatic chuck. A transparent electrostatic adsorption layer. · The effect of the present invention · The design of the electrostatic adsorption layer is coated on the bottom surface of the glass plate layer. The conductivity of the electrostatic adsorption layer or the semiconductor characteristics can be utilized to greatly reduce the voltage applied to the electrostatic chuck, and the electrostatic chuck can be greatly reduced. The effect on the coating or etching process helps to improve the coating or etch quality. The above and other technical contents, features and effects of the present invention will be apparent from the following detailed description of the preferred embodiments. Before the present invention is described in detail, it is noted that in the following description, similar elements are denoted by the same reference numerals. 4 M393794 As shown in FIG. 2, the first preferred example of the glass carrier for the novel semiconductor is applicable to a carrier wafer (not shown) and can be adsorbed and fixed by an electrostatic chuck 900. The crucible has an inner electrode 9〇1, and an insulator is disposed on the outer side of the inner electrode 901 radially outside the electrode 9〇2. The glass carrier 3 includes a glass layer 31 and a transparent electrostatic adsorption layer 32 coated on the bottom surface of the glass layer 31. The glass sheet layer 31 is a glass sheet conventionally used for carrying wafers, and has a thickness ranging from 〇.1 mm to 3.2 mm, and therefore will not be described in detail. The electrostatic adsorption layer 32 is a two-layer structure comprising a transparent conductive film 321 which is fixed to the bottom surface of the glass plate layer 31, and a transparent insulating film 322 which is fixed to the bottom surface of the transparent conductive film 321. The transparent conductive film 321 is made of a transparent conductive oxide (TCO) and has a thickness ranging from 〇1 μm to 5 μm. In the present embodiment, the transparent conductive film 321 is indium tin oxide (ΙΤ0)' having a thickness of 〇·12 μm, but in practice, the transparent conductive film 321 may also be selected from indium tin oxide. (ΙΤ〇), indium oxide (ιζο), zinc gallium oxide (GZ0), alumina (GA〇), and indium tin oxide, indium zinc oxide, zinc gallium oxide and aluminum oxide zinc group. The transparent insulating film 322 is made of a non-conductive oxide and has a thickness ranging from 0.01 μm to 5.0 μm. The purpose of the transparent insulating film 322 is to prevent the transparent conductive film 321 from being electrically connected to the inner and outer electrodes 9〇1 and 9〇2 of the electrostatic chuck 900. connection. In the present embodiment, the transparent insulating film 322 is yttrium oxide, but in practice, an oxide, a transition metal oxide or a combination of cerium oxide, aluminum oxide and a transition metal oxide may be used. The transition metal oxide is selected from the group consisting of chromium oxide 5 M393794, oxidized ox, ruthenium oxide, oxidized knob, ruthenium oxide or a combination thereof. The double-layer electrostatic adsorption layer 32 is coated on the bottom surface of the glass plate layer 31 with a conductive transparent conductive film 321 and then coated with an insulating transparent insulating film 322. The conductive property of the transparent conductive film 321 can be utilized. When the electrostatic chuck 900 adsorbs the glass carrier 3, only the working voltage of the general semiconductor processing device is applied to the electrostatic chuck 900, and the electrons and holes of the transparent conductive film 321 are induced to follow the internal electrodes 9〇1 and The polarity distribution of the electrode 902 produces an electrostatic force sufficient to adsorb the glass carrier 3. In the present embodiment, the voltage applied to the electrostatic chuck 900 is between _500 and 800 V, which is less than 1 KV, and is much lower than the high voltage (3 to 5 KV) required to adsorb the conventional glass carrier. In addition to reducing the energy consumption of the overall device, it is also possible to greatly reduce the influence of the voltage applied to the electrostatic chuck 900 on the quality of the coating or etching process. With the light transmittance test of the new glass carrier 3, the light transmittance is still relatively high, so when the glass carrier 3 is separated from the wafer, the film is used to peel off the adhesive wafer and the glass plate. The laser of the peelable adhesive between the layers 31 can still penetrate a large amount without affecting the peeling process of the glass carrier 3. As shown in Fig. 4, the second preferred embodiment of the glass carrier for a semiconductor of the present invention differs from the first embodiment only in the material design of the electrostatic adsorption layer 32. For convenience of explanation, only the differences between the present embodiment and the first embodiment will be described below. With reference to Fig. 5, in the present embodiment, the electrostatic adsorption layer 32 is a single-layer structure composed of a metal oxide having a semiconducting property, and has a thickness ranging from 0·01 μm to 5 μm. In the present embodiment, the electrostatic adsorption layer 32 is M393794 zinc oxide (ZnO) having a thickness of 1 pm, and the light transmittance is still comparable when the light transmittance test is performed on the glass carrier 3 coated with zinc oxide. high. When implemented, the electrostatic adsorption layer 32 may also be tin oxide, zinc oxide doped with impurities, tin oxide doped with impurities, or a combination of oxidized words, tin oxide, zinc oxide doped with impurities, and tin oxide doped with impurities. . Since the tin oxide film, the zinc oxide film doped with the impurities, and the tin oxide film doped with the impurities are also highly transparent, the glass carrier 3 made of the above material also has a high light transmittance. When the glass carrier 3 is used, the resistance of one side of the glass carrier 3 to the electrostatic chuck 9 is reduced by the semiconductor characteristics of the electrostatic adsorption layer 32, and the electrostatic chuck 9 is applied to the electrostatic chuck 9 The voltage of the crucible can be relatively reduced, which helps to reduce the influence of the electrostatic chuck 900 on the coating or etching process. In summary, the transparent conductive film can be utilized by coating the bottom surface of the glass layer 31 with the electrostatic adsorption layer 32. The conductive property of 321 or the semiconductor characteristic of the electrostatic chuck 900 of the electrostatic adsorption layer 32 3 is such that only a lower direct current is applied between the inner electrode 901 and the outer electrode 902 for adsorbing the glass carrier. Producing an electrostatic force sufficient to adsorb the glass carrier 3, thereby greatly reducing the energy consumption of the electrostatic chuck 9 and greatly reducing the influence of the voltage of the electrostatic chuck 900 on the coating or etching process, and contributing to
確實能達成本新型之目的。 ，當不 惟以上所述者，僅為本新型之較佳實施例而已， 7 M393794 能以此限定本新型實施之範圍，即大凡依本新型申請專利 範圍及新型說明内容所作之簡單的等效變化與修飾，皆仍 屬本新型專利涵蓋之範圍内。 【圖式簡單說明】 圖1是一般玻璃載板被靜電吸盤吸附時的側視示意圖 9 圖2是本新型半導體用之玻璃載板的第一較佳實施例 的側視示意圖，並說明被一靜電吸盤吸附時的電荷分布情 況； 圖3是該第一較佳實施例之光穿透率曲線圖； 圖4是本新型半導體用之玻璃載板的第二較佳實施例 之側視示意圖；及 圖5是第二較佳實施例之光穿透率曲線圖。 M393794 【主要元件符號說明】 3....... ....玻璃載板 322.... ....透明絕緣膜 31 ·.··· ....玻璃板層 900·.·. ....靜電吸盤 32 ..... ....靜電吸附層 901·.·. ....内電極 321··.· ....透明導電膜 902 ···· •…外電極It is indeed possible to achieve the purpose of this new type. When not only the above, but only the preferred embodiment of the present invention, 7 M393794 can limit the scope of the implementation of the present invention, that is, the simple equivalent change of the scope of the patent application and the new description of the present invention. And modifications are still within the scope of this new patent. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view of a general glass carrier plate adsorbed by an electrostatic chuck. FIG. 2 is a side elevational view of the first preferred embodiment of the glass carrier for a semiconductor of the present invention. FIG. 3 is a schematic diagram of a light transmittance of the first preferred embodiment; FIG. 4 is a side elevational view of a second preferred embodiment of the glass carrier for the novel semiconductor; And Fig. 5 is a graph showing the light transmittance of the second preferred embodiment. M393794 [Description of main component symbols] 3.............glass carrier board 322.....transparent insulating film 31 ·····....glass plate layer 900·. ·..... electrostatic chuck 32 ..... .... electrostatic adsorption layer 901 ·..... internal electrode 321 · · · · · transparent conductive film 902 ···· ...outer electrode